CN114606528A - Preparation method of tantalum nitride photoelectrode modified based on PEDOT (polymer stabilized ethylene terephthalate): PSS (Poly styrene) - Google Patents
Preparation method of tantalum nitride photoelectrode modified based on PEDOT (polymer stabilized ethylene terephthalate): PSS (Poly styrene) Download PDFInfo
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- CN114606528A CN114606528A CN202210286079.3A CN202210286079A CN114606528A CN 114606528 A CN114606528 A CN 114606528A CN 202210286079 A CN202210286079 A CN 202210286079A CN 114606528 A CN114606528 A CN 114606528A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 title claims abstract description 12
- 239000004793 Polystyrene Substances 0.000 title description 36
- 229920002223 polystyrene Polymers 0.000 title description 36
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 title description 2
- 229920000642 polymer Polymers 0.000 title description 2
- 238000012986 modification Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 21
- 230000004048 modification Effects 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229920000144 PEDOT:PSS Polymers 0.000 claims abstract description 13
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims abstract description 12
- 238000000313 electron-beam-induced deposition Methods 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 13
- 239000000243 solution Substances 0.000 claims description 13
- 238000004528 spin coating Methods 0.000 claims description 13
- 239000002243 precursor Substances 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 2
- 238000007865 diluting Methods 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 2
- 238000009987 spinning Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 39
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000031700 light absorption Effects 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000000605 extraction Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- 229910001868 water Inorganic materials 0.000 description 11
- 230000005525 hole transport Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000001699 photocatalysis Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000009503 electrostatic coating Methods 0.000 description 1
- 150000002506 iron compounds Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
- C25B11/052—Electrodes comprising one or more electrocatalytic coatings on a substrate
- C25B11/053—Electrodes comprising one or more electrocatalytic coatings on a substrate characterised by multilayer electrocatalytic coatings
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/02—Hydrogen or oxygen
- C25B1/04—Hydrogen or oxygen by electrolysis of water
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/50—Processes
- C25B1/55—Photoelectrolysis
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
- C25B11/051—Electrodes formed of electrocatalysts on a substrate or carrier
- C25B11/073—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material
- C25B11/091—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of at least one catalytic element and at least one catalytic compound; consisting of two or more catalytic elements or catalytic compounds
- C25B11/095—Electrodes formed of electrocatalysts on a substrate or carrier characterised by the electrocatalyst material consisting of at least one catalytic element and at least one catalytic compound; consisting of two or more catalytic elements or catalytic compounds at least one of the compounds being organic
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Abstract
The invention belongs to the technical field of preparation of photoelectrocatalysis photoelectrode, and particularly relates to a preparation method of a tantalum nitride photoelectrode based on PEDOT and PSS modification. The invention utilizes a double-source electron beam deposition method and a high-temperature nitridation method to directly prepare Ta on a metal substrate3N5And a film and using PEDOT: PSS surface modification Ta3N5Film to yield PEDOT: ta after PSS surface modification3N5A thin film photoelectrode. The present invention uses PEDOT: PSS surface modification of unaltered Ta3N5Crystal structure of the film, does not block and obstruct Ta3N5Absorption of visible light by photoelectrode, thereby increasing Ta3N5The hole transmission capability and the photoelectrode hole extraction capability are obviously improved, so that the photoelectrocatalysis performance is obviously improved, and the long-time photoelectrochemical stability is improved. Meanwhile, the band gap of the energy band can be reduced, the visible light absorption range is widened, and the photoelectrocatalysis capability and photoelectrochemical activity of the photoelectrode are effectively improved.
Description
Technical Field
The invention belongs to the technical field of preparation of photoelectrocatalysis photoelectrode, and particularly relates to a preparation method of tantalum nitride photoelectrode based on modification of PEDOT and PSS, wherein the PEDOT and PSS are conductive polymers poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid.
Background
Ta3N5The photocatalytic water splitting material has a proper band gap, the band gap is 2.1eV, most of solar radiation spectrum can be absorbed, solar spectrum with the wavelength less than 600nm can be absorbed, the position of the proper energy band is provided, the conduction band of the photocatalytic water splitting material is higher than the reduction potential of water, and the valence band of the photocatalytic water splitting material is lower than the oxidation potential of water, so that photocatalytic water splitting can be realized. Of the numerous photoelectrode semiconductor materials, Ta3N5Is most promising for achieving the 10% STH conversion efficiency required for practical production applications. Ta3N5Mainly composed of the oxide Ta2O5High temperature nitridation of the precursor oxide to yield Ta3N5The material has a large amount of pores, so that the surface phase and the bulk phase are seriously compounded, and a defect state is formed to inhibit the photoelectrocatalysis performance.
To solve the above problems, researchers have introduced Ta as a hole transport layer (e.g., molten iron compound Fh, GaN coating, etc.)3N5The photoelectrode is subjected to surface covering treatment, and the water decomposition performance and stability of the PEC are improved to a certain extent. However, in most cases, the hole transport layer, after application, blocks and limits the absorption of visible light, resulting in Ta3N5The initial potential of the photoelectrode is higher than 0.8VRHEPhotocurrent at low potential is generally low and photoelectrochemical stability over a long period of time is also poor. Therefore, a new hole transport layer and Ta need to be found3N5The photoelectrode is combined to improve the performance of photoelectrocatalysis water decomposition.
Disclosure of Invention
Aiming at the problems or the defects, the existing Ta introducing the hole transport layer is solved3N5The photoelectrode has poor visible light absorption and inhibited Ta3N5The invention provides a preparation method of a tantalum nitride photoelectrode modified by PEDOT and PSS.
A preparation method of a tantalum nitride photoelectrode modified by PEDOT and PSS comprises the following steps:
And 2, preparing the tantalum-based oxide precursor film with the thickness of 100-700nm by adopting a double-source electron beam deposition method.
Step 5, coating Ta of PEDOT PSS on the surface in the step 4 at the temperature of 374-474K in a vacuum annealing device3N5Annealing the film for 0.5-5h to make PEDOT: PSS better adhere to Ta3N5Obtaining PEDOT PSS/Ta on the film3N5A film.
PSS is a conductive polymer and has the characteristics of good film forming property, high conductivity, high light transmittance, excellent thermal stability, easy dissolution and the like. At present, the conductive material is mainly used as a stretchable conductive material, and is applied to flexible devices and stretchable devices, such as wearable and implantable equipment; or thermoelectric materials, electrostatic coatings; or as a transparent conductive electrode, applied to organic light emitting diodes, organic displays and the like.
The invention utilizes a double-source electron beam deposition method and a high-temperature nitridation method to directly prepare Ta on a metal substrate3N5Film and using PEDOT for the first time by a two-step spin-coating process and vacuum annealing process: PSS surface modification Ta3N5Film to obtain uniformly coated PEDOT PSS/Ta3N5A film;using PEDOT: ta after PSS surface modification3N5The film did not change Ta3N5Crystal structure of thin film, and Ta as hole transport layer3N5The holes at the surface of the membrane are better transferred to the electrolyte to participate in the oxidation reaction of water. Using PEDOT: ta after PSS surface modification3N5Photoelectrode is higher than Ta without surface modification3N5The photoelectrode hole extraction capacity is obviously improved, so that the photoelectrocatalysis performance is obviously improved, and the long-time photoelectrochemical stability is improved.
Drawings
FIG. 1 is a process diagram of the present invention;
FIG. 2 is a schematic diagram showing the change of a film in a two-step spin coating process and a vacuum high-temperature annealing process;
FIG. 3 shows the PEDOT: PSS/Ta samples of example 13N5Film SEM image;
FIG. 4 shows the PEDOT PSS/Ta ratios in examples 1, 2 and 33N5Film and Ta3N5XRD pattern of the film;
FIG. 5 shows the PEDOT PSS/Ta ratios in examples 1, 2, and 33N5Film and Ta3N5UV-vi s spectrum of the film;
FIG. 6 shows the PEDOT PSS/Ta ratios in examples 1, 2 and 33N5Photoelectrode and Ta3N5Current-voltage plots of the photoelectrode;
FIG. 7 shows the PEDOT PSS/Ta ratios in examples 1, 2 and 33N5Photoelectrode and Ta3N5Current-time graph of photoelectrode.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It should be noted that the examples given are not to be construed as limiting the invention. Insubstantial modifications and variations of the invention, as viewed by a person skilled in the art in light of the above teachings, are intended to be included within the scope of the present invention.
Example 1:
Step 5, after the spin coating is finished, putting the sample obtained in the step 4 into a vacuum annealing device, and annealing for 1h in a vacuum environment of 394K to prepare PEDOT (PSS)/Ta3N5A film.
Example 2:
as in example 1, the volume ratio of PEDOT: PSS solution to deionized water was 1: 1, obtaining 1/2 volume ratio PEDOT: PSS solution after dilution, and then carrying out spin coating.
Example 3:
as in example 1, the volume ratio of PEDOT: PSS solution to deionized water was 1: 3, diluting to obtain 1/4 volume ratio PEDOT: PSS solution, and then carrying out spin coating.
FIG. 2 is a schematic diagram showing the change of the film in the two-step spin coating process and the vacuum high-temperature annealing process, and FIG. 3 is a schematic diagram showing the change of PEDOT to PSS/Ta in example 13N5Film SEM images. FIGS. 2 and 3 show that PSS can be uniformly coated on Ta to obtain PEDOT by two-step spin coating and vacuum high-temperature annealing3N5On the film and can fill part of Ta3N5The pores in the film enhance the charge transfer rate among particles.
FIG. 4 shows the PEDOT PSS/Ta ratios in examples 1, 2 and 33N5Film and Ta3N5XRD pattern of the film showed Ta surface-modified with no PEDOT: PSS3N5In contrast, using PEDOT PSS vs Ta3N5The film is surface-modified without changing Ta3N5Crystal structure of the film.
FIG. 5 PEDOT PSS/Ta in examples 1, 2, 33N5Film and Ta3N5UV-vi s spectra of the films, showing the use of PEDOT PSS vs Ta3N5After surface modification of the film, Ta3N5The band gap is reduced and the range of absorbing visible light is enlarged. But in the case of applied undiluted PEDOT PSS solutions, this can result in Ta3N5Too thick a surface coating can affect the absorption and utilization of light.
FIGS. 6 and 7 are diagrams for PEDOT: PSS/Ta, respectively3N5Carrying out a linear volt-ampere characteristic curve and a photocurrent stability test result by the photoelectrode; PSS vs Ta by coating with PEDOT3N5After surface modification of photoelectrode, Ta3N5Is reduced to 0.6VRHEPSS solution with moderate concentration through regulating and controlling surface modification can effectively improve Ta as a hole transport layer3N5Photoelectrode photocurrent density. Long-term current stability over 23hTesting, PEDOT is Ta after PSS surface modification3N5The photoelectrode can also maintain 90% of the initial photocurrent.
As can be seen by the above examples: the invention uses PEDOT, PSS and Ta by a two-step spin-coating method and a vacuum high-temperature annealing method3N5Surface modification of photoelectrode without changing Ta3N5The crystal structure of (2). Meanwhile, the band gap of the energy band can be reduced, and the visible light absorption range is widened. PSS solution at moderate concentration of PEDOT, in Ta3N5Ta is not shielded and hindered after the surface of the photoelectrode is coated3N5Absorption of visible light by photoelectrode, thereby increasing Ta3N5The hole transmission capability of the photoelectrode effectively improves the photoelectrocatalysis capability and photoelectrochemical activity of the photoelectrode.
Claims (6)
1. The preparation method of the tantalum nitride photoelectrode modified by PEDOT and PSS is characterized by comprising the following steps:
step 1, cleaning a metal substrate;
step 2, preparing the tantalum-based oxide precursor film with the thickness of 100-700nm by adopting a double-source electron beam deposition method;
step 3, the tantalum-base oxide precursor film prepared in the step 2 is loaded into a quartz boat and sealed in a high-temperature tube furnace, and then NH is carried out3Heating to 1074-1474K at a rate of 1-20K/min in the atmosphere, keeping the temperature at 1074-1474K for 6-40h, and cooling to room temperature at a rate of 1-20K/min to obtain Ta3N5A film;
step 4, adopting a two-step spin coating method to use PEDOT (Poly ethylene glycol Ether-Co-Polymer) solution to react with the Ta prepared in the step 33N5Performing surface modification on the film, wherein PEDOT is a PSS solution which is an aqueous solution with the weight percent of less than or equal to 3 percent;
step 5, coating Ta of PEDOT PSS on the surface in the step 4 at the temperature of 374-474K in a vacuum annealing device3N5Annealing the film for 0.5-5h to obtain PEDOT (PSS)/Ta3N5A film;
step 6, obtaining PEDOT PSS/Ta in step 53N5Welding electric conduction of metal substrate surface of filmAnd packaging and covering the welding points and the metal substrate surface by using a solidified glue to form ohmic contact, thus obtaining PEDOT (PSS/Ta)3N5And a photoelectrode.
2. The preparation method of the tantalum nitride photoelectrode based on the modification of PEDOT: PSS as claimed in claim 1, wherein the preparation method comprises the following steps:
the two-step spin coating method in the step 4 specifically comprises the following steps: the spinning speed of the first step is 500rpm, and the time lasts for 5 s; the second step spin speed was 4000rpm for 60 s.
3. The preparation method of the tantalum nitride photoelectrode based on the modification of PEDOT: PSS as claimed in claim 1, wherein the preparation method comprises the following steps: the specific process of the step 5 of vacuum annealing is annealing for 1h in a vacuum environment of 394K.
4. The preparation method of the tantalum nitride photoelectrode based on the modification of PEDOT: PSS as claimed in claim 1, wherein the preparation method comprises the following steps: the solidified glue used in the step 6 is epoxy resin.
5. The preparation method of the tantalum nitride photoelectrode based on the modification of PEDOT: PSS as claimed in claim 1, wherein the preparation method comprises the following steps: and (3) diluting the PEDOT/PSS solution used in the step (4) with deionized water for use.
6. PSS modified tantalum nitride photoelectrode based on PEDOT is characterized in that: prepared by the method of claim 1.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210286079.3A CN114606528A (en) | 2022-03-22 | 2022-03-22 | Preparation method of tantalum nitride photoelectrode modified based on PEDOT (polymer stabilized ethylene terephthalate): PSS (Poly styrene) |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210286079.3A CN114606528A (en) | 2022-03-22 | 2022-03-22 | Preparation method of tantalum nitride photoelectrode modified based on PEDOT (polymer stabilized ethylene terephthalate): PSS (Poly styrene) |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653936A (en) * | 2015-11-04 | 2017-05-10 | 中国科学院大连化学物理研究所 | Ta3N5 photoelectrode and preparation method thereof |
| CN109065726A (en) * | 2018-07-24 | 2018-12-21 | 太原理工大学 | A kind of two-dimensional layer perovskite photodetector and preparation method thereof based on surface plasmon resonance |
| US20200127204A1 (en) * | 2018-10-22 | 2020-04-23 | The Board Of Trustees Of The University Of Alabama | Rapid layer-specific photonic annealing of perovskite thin films |
| CN111883662A (en) * | 2020-08-28 | 2020-11-03 | 电子科技大学 | Organic solar cell based on rotary annealing process and preparation method thereof |
-
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- 2022-03-22 CN CN202210286079.3A patent/CN114606528A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653936A (en) * | 2015-11-04 | 2017-05-10 | 中国科学院大连化学物理研究所 | Ta3N5 photoelectrode and preparation method thereof |
| CN109065726A (en) * | 2018-07-24 | 2018-12-21 | 太原理工大学 | A kind of two-dimensional layer perovskite photodetector and preparation method thereof based on surface plasmon resonance |
| US20200127204A1 (en) * | 2018-10-22 | 2020-04-23 | The Board Of Trustees Of The University Of Alabama | Rapid layer-specific photonic annealing of perovskite thin films |
| CN111883662A (en) * | 2020-08-28 | 2020-11-03 | 电子科技大学 | Organic solar cell based on rotary annealing process and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| FU, JIE等: ""Identifying Performance-Limiting Deep Traps in Ta3N5 for Solar Water Splitting"" * |
| YANG YAJIE等: ""Preparation and Characterization of Ta2O5 Films Surface Modified by Electrostatic Self-assembly Ultrathin Films"" * |
| 余倩: ""铁基氧化物薄膜光电阳极的制备与性能研究"" * |
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