CN114597272A - Sb2(S,Se)3Substrate type heterojunction thin film, solar cell and cell preparation method thereof - Google Patents
Sb2(S,Se)3Substrate type heterojunction thin film, solar cell and cell preparation method thereof Download PDFInfo
- Publication number
- CN114597272A CN114597272A CN202210226615.0A CN202210226615A CN114597272A CN 114597272 A CN114597272 A CN 114597272A CN 202210226615 A CN202210226615 A CN 202210226615A CN 114597272 A CN114597272 A CN 114597272A
- Authority
- CN
- China
- Prior art keywords
- tio
- film
- layer
- type heterojunction
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052711 selenium Inorganic materials 0.000 title claims abstract description 83
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 110
- 239000010408 film Substances 0.000 claims abstract description 76
- 239000002073 nanorod Substances 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 38
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000002131 composite material Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 12
- 230000005525 hole transport Effects 0.000 claims abstract description 9
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- 238000003491 array Methods 0.000 claims abstract description 6
- 239000011669 selenium Substances 0.000 claims description 76
- 238000001704 evaporation Methods 0.000 claims description 14
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims description 14
- 239000002105 nanoparticle Substances 0.000 claims description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 12
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000013329 compounding Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical group C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical compound CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229940007424 antimony trisulfide Drugs 0.000 claims description 3
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 229910003473 lithium bis(trifluoromethanesulfonyl)imide Inorganic materials 0.000 claims description 3
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 claims description 3
- 239000011812 mixed powder Substances 0.000 claims description 3
- 229910021617 Indium monochloride Inorganic materials 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000013461 design Methods 0.000 abstract description 2
- 238000012512 characterization method Methods 0.000 description 11
- 239000010931 gold Substances 0.000 description 8
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- MUYUEDVRJJRNOO-UHFFFAOYSA-N selanylidene(sulfanylidene)antimony Chemical compound S=[Sb]=[Se] MUYUEDVRJJRNOO-UHFFFAOYSA-N 0.000 description 2
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 description 2
- IYKVLICPFCEZOF-UHFFFAOYSA-N selenourea Chemical compound NC(N)=[Se] IYKVLICPFCEZOF-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000004729 solvothermal method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002190 incident photon conversion efficiency spectrum Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 231100000167 toxic agent Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 231100000925 very toxic Toxicity 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses Sb2(S,Se)3A substrate type heterojunction thin film, a solar cell and a cell preparation method thereof relate to the technical field of solar cell material preparation and structure design. An anode, an electron transport layer and Sb are sequentially deposited on a glass lining base2(S,Se)3Matrix type heterojunction filmA film, an organic hole transport layer, a cathode; sb2(S,Se)3The substrate type heterojunction film is made of TiO2Nanorod array, In2S3And Sb2(S,Se)3Layer of material, TiO2Multiple TiO in nanorod array2Nanorods vertically grown on the electron transport layer, In2S3A material layer deposited on the electron transport layer and wrapped on the TiO2Formation of TiO on nanorods2/In2S3Composite nanorod arrays, Sb2(S,Se)3The material layer wraps the TiO2/In2S3The nanorod arrays are compounded and the intermediate gaps are filled with the formed body type heterojunction thin film. Sb in the invention2(S,Se)3The substrate type heterojunction solar cell is simple in preparation method, novel in structure and high in photoelectric conversion efficiency.
Description
Technical Field
The invention belongs to the technical field of solar cell material preparation and structure design, and particularly relates to Sb2(S,Se)3A substrate type heterojunction thin film, a solar cell and a cell preparation method thereof are provided.
Background
Solar energy is a green sustainable energy source, and increasing the proportion of solar energy in energy supply is one of the main approaches for solving the environmental pollution and energy crisis. Solar energy is converted into electric energy through a solar cell to realize photovoltaic power generation, and the solar cell is an important mode for utilizing the solar energy. Exploring new material systems, improving cell efficiency and stability, and reducing cell cost have become major challenges for solar cell research and photovoltaic industry development.
Sb2(S,Se)3The (selenium antimony sulfide) has the advantages of large earth reserves of elements, no toxicity, low price and the like, and the material defects and the electronic performance can be regulated and controlled by adjusting the content of selenium, so the selenium antimony sulfide is a potential solar cell light absorption material. The solar cell with the body type heterojunction structure formed by the one-dimensional inorganic nanorod or linear array and the light absorption material has a plurality of advantages, firstly, the inorganic nanorod or linear array can be used as an electron transmission channel, so that photo-generated electrons are directly transmitted to a collecting electrode along an oriented nano array, and the recombination of charges is reduced; secondly, in such a bulk heterojunction structure, it is possible to obtain a large charge separation interface area, overcome the disadvantage of short effective diffusion length of a photogenerated carrier, and improve the utilization efficiency of incident light of the cell, and thus, it has become an important research object in low-cost solar cells in recent years.
In the prior art, Tang et al (nat. energy 2020,5, 587-595) prepared Sb on cadmium sulfide thin film by using selenourea as selenium source and using solvothermal method2(S,Se)3Film of preparing Voc＝0.63V、Jsc＝23.70mA/cm2And eta 10.10% CdS/Sb2(S,Se)3A flat-panel heterojunction solar cell; however, selenourea is a toxic substance, especially very toxic to organic substances in water. Yin et al (adv. mater.2021,33,2006689) prepared Sb on cadmium sulfide film by double-source coevaporation of sulfur powder and selenium ladder2(S,Se)3Film, CdS/Sb prepared2(S,Se)3V of flat plate heterojunction solar celloc、JscFF and eta reach 0.46V and 30.20mA/cm respectively257.9% and 8.0%; however, the multi-source co-evaporation technology requires expensive equipment and harsh control conditions. In addition, the two battery structures are both flat, the extraction of photo-generated charges is limited, and toxic cadmium sulfide materials are used in the batteries.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides Sb2(S,Se)3In the invention, a solvothermal method and a precursor solution spin-coating method are respectively used for preparing a substrate type heterojunction film, a solar cell and a cell preparation method thereof on TiO2TiO is prepared on the nano-particle film2/In2S3Composite nanorod arrays, then on TiO by vapor deposition process2/In2S3Composite nanorod array mid-gap deposition of Sb2(S,Se)3Material layer of forming TiO2/In2S3/Sb2(S,Se)3A bulk heterojunction film of TiO2/In2S3/Sb2(S,Se)3The composition of the body type heterojunction film and the organic hole transmission material establishes Sb-based2(S,Se)3Solar cell of body type heterojunction thin film (Sb for short)2(S,Se)3A matrix-type heterojunction solar cell) and a method of fabricating the same, the efficiency of the solar cell has reached η 10.78%.
The invention is realized by the following technical scheme:
Sb2(S,Se)3matrix type heterojunction film, Sb2(S,Se)3The material layer being filled with TiO2/In2S3Compounding the nanorod array and combiningThe film is wrapped to form a three-dimensional heterojunction film. TiO 22/In2S3The composite nanorod array forms an electron transmission channel, Sb2(S,Se)3The material layer is a light absorbing layer. TiO 22The thickness of the nanorod array is 200-500nm, the diameter of the nanorod is 20-80nm, and TiO is2The number density of the nano-rods is 50-200/mum2，In2S3The thickness of the film layer is 10-100nm, Sb2(S,Se)3The thickness of the film layer is 100-300nm, TiO2/In2S3/Sb2(S,Se)3The thickness of the bulk heterojunction film is 250-550 nm.
Sb2(S,Se)3The substrate type heterojunction solar cell comprises the Sb2(S,Se)3The matrix type heterojunction thin film is characterized in that: sb2(S,Se)3A substrate-type heterojunction film deposited on the electron transport layer, TiO2Multiple TiO in nanorod array2Nanorods vertically grown on the electron transport layer, In2S3A material layer deposited on the electron transport layer and wrapped on the TiO2Formation of TiO on nanorods2/In2S3Composite nanorod arrays, Sb2(S,Se)3The material layer wraps the TiO2/In2S3The composite nano-rod array is filled in the middle gap to form TiO2/In2S3/Sb2(S,Se)3An inorganic type heterojunction thin film.
Sb2(S,Se)3The preparation method of the substrate type heterojunction solar cell comprises the following steps:
(1) etching ITO or FTO layer on conductive glass into required shape with concentrated hydrochloric acid and Zn powder, cleaning, drying, and depositing TiO 50-100nm thick2A nanoparticle film;
(2) uniformly mixing water and concentrated hydrochloric acid according to the volume ratio of 0.5-1.5:1, then adding tetrapropyl titanate and fully stirring uniformly, wherein the volume ratio of the tetrapropyl titanate to the mixture of hydrochloric acid and water is 1-2: 100; pouring the prepared reaction solution into an autoclave, and depositing TiO2The conductive glass surface of the film is suspended in the reaction solution in a downward modeSealing the reaction kettle, reacting at 150-190 deg.C for 1-3 hr, and reacting at TiO2Growing TiO on the nano-particle film2A nanorod array;
(3) InCl is reacted at room temperature3·4H2O in N, N-dimethylformamide, InCl3·4H2O with the concentration of 0.3-0.5mol/L, then adding thiourea, stirring for 1-3 hours at room temperature to obtain In2S3Reaction precursor solution of InCl3·4H2The molar ratio of O to thiourea is 1: 2-4; in is mixed with2S3The reaction precursor solution is dripped into the TiO obtained in the step (2)2Spin coating the nanorod array film to form a film, repeating the spin coating for 1-3 times, and then carrying out heat treatment for 5-15 minutes at the temperature of 240 ℃ and 300 ℃ under the protection of inert gas; after the heat treatment is finished, the sample is naturally cooled to room temperature to obtain TiO2/In2S3Compounding a nanorod array film;
(4) fully mixing selenium powder and antimony trisulfide powder according to a molar ratio of 0-2:1, placing the mixed powder as an evaporation source material in an evaporation boat of an evaporation coating instrument, and obtaining TiO obtained in the step (3)2/In2S3The composite nanorod array film sample is placed right above the evaporation boat, and the film sample is heated to 200-300 ℃ under the protection of certain vacuum or inert gas, and thermal evaporation is carried out to Sb2(S,Se)3Deposition of a layer of material onto TiO2/In2S3Filling the gap on the composite nano-rod array to form TiO2/In2S3/Sb2(S,Se)3A bulk heterojunction thin film.
(5) Spin-coating a layer of mixture solution of SpiroOMeTAD, LiTFSI and TBP with the concentration of 30-80mg/mL on the body type heterojunction thin film obtained in the step (4), and carrying out heat treatment for 5-15 minutes at the temperature of 50-150 ℃ in the air to obtain a Spiro-OMeTAD hole transport layer thin film; continuing to evaporate Au or Ag film by a thermal evaporation method to obtain a film based on Sb2(S,Se)3A solar cell of a substrate type heterojunction thin film.
The invention has the following beneficial effects:
the invention comprises the following steps:
(1) in terms of core material, compared with the prior art (nat. energy 2020,5, 587-595; adv. mater.2021,33,2006689), low-toxicity TiO is used2/In2S3Sb as electron acceptor/buffer layer material and key2(S,Se)3The preparation method of the layer is obviously different, and the preparation method of the invention is easier to realize low cost and large area preparation;
(2) in the aspects of the structure and the performance of the battery, the battery adopts a body type heterojunction structure consisting of an inorganic nanorod (or wire) array and a light absorption material, the transmission efficiency of a photon-generated carrier of the battery is higher, and the photoelectric conversion efficiency is higher. The invention has great application value in the fields of photovoltaic materials, low-price solar cell devices and the like.
Of course, it is not necessary for any product in which the invention is practiced to achieve all of the above-described advantages at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a solar cell structure;
FIG. 2 is TiO2Nanoparticle thin film and TiO2XRD characterization results of the nanorod array film;
FIG. 3 is TiO2Nanoparticle thin film and TiO2SEM characterization results of the nanorod array film;
FIG. 4 is TiO2/In2S3Composite nanorod array and TiO2/In2S3/Sb2(S,Se)3XRD characterization results of the body type heterojunction thin film;
FIG. 5 is TiO2/In2S3Composite nanorod array and TiO2/In2S3/Sb2(S,Se)3Of bulk heterojunction filmsSEM characterization results;
FIG. 6 shows the current-voltage (J-V) characteristic curve of a solar cell;
FIG. 7 is a graph of incident photon-to-electron conversion efficiency (IPCE) characterization of a solar cell;
in the drawings, the components represented by the respective reference numerals are listed below:
1-glass substrate, 2-FTO electrode, 3-TiO2Nanoparticle thin film, 4-TiO2Nanorod, 5-In2S3Shell layer, 6-Sb2(S,Se)3A light absorbing layer, a 7-Spiro-OMeTAD film, and an 8-gold electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Sb2(S,Se)3The preparation method of the substrate type heterojunction solar cell comprises the following steps:
1、TiO2and (3) preparing a thin film and a nanorod array.
(1-2)TiO2Preparation of nanoparticle film 3:
etching FTO conductive glass (with the size of 2.5 multiplied by 2.5 cm)215 omega/□) is respectively cleaned by ultrasonic for 5 minutes by acetone, isopropanol and ultrapure water, and is dried for standby. Mixing absolute ethyl alcohol, tetrabutyl titanate and glacial acetic acid according to the volume ratio of 4:1:0.1 to prepare uniform and colorless TiO2A sol precursor solution. 150 μ L of TiO2The sol precursor liquid drop is spin-coated on the etched ITO conductive glass (2000 r/min, 30 s), and the spin-coating is continuously carried out twice to obtain TiO2A sol film; at room temperature, adding TiO2The sol film was stored in a moisture-retaining container with a relative humidity of 52% for 12 hours, and then placed in a muffle furnace under an air atmosphere, and the temperature of the muffle furnace was raised to 55 ℃ at a temperature raising rate of 1 ℃/minTiO at 0 ℃ and held at this temperature for 30 minutes2Sintering the sol film; after sintering, the muffle furnace is cooled to room temperature at the speed of 1 ℃/min to obtain TiO2A nanoparticle film 3. TiO 22The thickness of the nanoparticle thin film 3 is controlled by the number of spin-coating times.
(1-2)TiO2Preparation of nanorod 4 array:
adding 20ml of deionized water into 20ml of concentrated hydrochloric acid, uniformly stirring, adding 0.7ml of tetrapropyl titanate, and fully and uniformly stirring; the prepared reaction solution is poured into an autoclave, and then TiO is deposited2Suspending the film in the reaction solution with the conductive glass surface facing downwards, sealing the reaction kettle, reacting at 170 deg.C for 2 hr, and finally reacting on TiO2Growing TiO on the nano-particle film 32A nanorod 4 array;
(1-3) characterization of the product:
TiO2the nanorod 4 array is characterized in figures 2 and 3. X-ray diffraction (XRD) testing showed that TiO2The nano-rod 4 has a rutile phase structure (JCPDS 86-0147); scanning Electron Microscope (SEM) pictures show that the resulting TiO2The nanorods 4 grow perpendicular to the FTO substrate, have a length of about 350nm, a diameter of about 50nm, and a number density of about 100 nanorods/μm2。
2、TiO2/In2S3/Sb2(S,Se)3And (3) preparing the body type heterojunction film.
(2-1)TiO2Preparation of nanorod 4 array: the same as in example 1.
(2-2) adding InCl3·4H2O in N, N-dimethylformamide, InCl3·4H2O concentration of 0.4mol/L, then adding thiourea, stirring for 2 hours at room temperature to obtain In2S3Reaction precursor solution of InCl3·4H2The molar ratio of O to thiourea is 1: 3; in is mixed with2S3Dropping the reaction precursor solution on TiO2Spin coating the nanorod 4 array film to form a film, repeating the spin coating for 2 times, and then carrying out heat treatment for 10 minutes at 270 ℃ under the protection of inert gas; after the heat treatment is finished, the sample is naturalCooling to room temperature to obtain TiO2/In2S3Compounding a nanorod array film; selenium powder and antimony trisulfide powder are fully mixed according to the molar ratio of 1:1, the mixed powder is used as an evaporation source material and is placed in an evaporation boat of an evaporation coating instrument, and TiO is added2/In2S3Placing the composite nanorod array film sample right above an evaporation boat, heating the film sample to 250 ℃ under the protection of certain vacuum or inert gas, and simultaneously carrying out thermal evaporation to Sb2(S,Se)3The material layer being deposited on the TiO2/In2S3Filling the gap on the composite nano-rod array to form TiO2/In2S3/Sb2(S,Se)3A bulk heterojunction thin film.
(2-3) product characterization:
TiO2/In2S3characterization of the composite nanorod array is shown In FIGS. 4 and 5a, and X-ray diffraction (XRD) testing indicates that In is prepared2S3Is a cubic phase structure; characterization by scanning Electron microscope shows, In2S3The material is tightly wrapped on the TiO2A deposit of a certain thickness In is formed on the nanorods 4 and at the bottom2S3The shell 5 has a thickness of about 50 nm. TiO 22/In2S3/Sb2(S,Se)3The characteristics of the bulk heterojunction film are shown in figures 4 and 5b, and as can be seen from an X-ray diffraction (XRD) spectrum, a diffraction peak is very consistent with antimony selenide (00-052-1649), which indicates that the antimony selenide material is successfully obtained; characterization by scanning Electron microscope shows, Sb2(S,Se)3Is tightly wrapped on TiO2/In2S3On the composite nano rod, the thickness is 200nm, and TiO is formed2/In2S3/Sb2(S,Se)3A bulk heterojunction thin film.
3、Sb2(S,Se)3Preparing a body type heterojunction solar cell:
(3-1)TiO2preparation of nanorod 4 array: the same as example 1;
(3-2)TiO2/In2S3/Sb2(S,Se)3preparing a body type heterojunction thin film:the same as example 2;
(3-3)Sb2(S,Se)3and preparing the substrate type heterojunction solar cell.
Spin-coating a mixture solution of spiroOMeTAD, LiTFSI and TBP with the concentration of 30-80mg/mL on the bulk heterojunction thin film obtained in the example 2, and carrying out heat treatment in air at the temperature of 50-150 ℃ for 5-15 minutes to obtain a Spiro-OMeTAD hole transport layer; evaporating an Au film on the hole transport layer by a thermal evaporation method to obtain Sb2(S,Se)3A substrate type heterojunction thin-film solar cell (shown in figure 1) comprises a glass substrate 1, an FTO electrode 2 and TiO in sequence from bottom to top2Nanoparticle film 3, TiO2Nanorod 4, In2S3Shell layer 5, Sb2(S,Se)3A light absorbing layer 6, a cyclone-OMeTAD film 7, and a gold electrode 8.
(3-4) characterization of the cell:
solar cell performance is characterized by current-voltage (J-V) characteristics and IPCE spectra, see fig. 6 and 7. The current-voltage (J-V) curve of the cell is that AM 1.5 is used to simulate sunlight (light intensity P)in＝100mW/cm2) And (6) carrying out testing. In the J-V test process, the illumination area of the battery is controlled to be positioned below the Au electrode by the shielding window and is consistent with the size of the Au electrode, so that only the area of the photoactive layer of the battery, which is consistent with the size of the Au electrode, is illuminated, and the area is the effective area of the battery; the battery performance parameters obtained by the test and the V of the battery are shown in Table 1oc、JscThe FF and the energy conversion efficiency (eta) respectively reach 0.67V and 26.29mA/cm261.37% and 10.78%, indicating Sb prepared2(S,Se)3The body type heterojunction battery has good photovoltaic performance. IPCE spectrum shows that the cell has stronger photon-electron conversion efficiency in the spectral range of 300-1000 nm.
Manufacture of Sb included in the above-described method for manufacturing a battery2(S,Se)3In the matrix type heterojunction film，Sb2(S,Se)3The material layer being filled with TiO2/In2S3Compounding nano rod array and coating it to form body type hetero-junction film, and TiO2/In2S3The composite nanorod array forms an electron transmission channel, Sb2(S,Se)3The material layer is light-absorbing layer, TiO2The thickness of the nanorod array is 200-500nm, the diameter of the nanorod is 20-80nm, and TiO is2The number density of the nano-rods is 50-200/mum2，In2S3The thickness of the film layer is 10-100nm, Sb2(S,Se)3The thickness of the film layer is 100-300nm, TiO2/In2S3/Sb2(S,Se)3The thickness of the bulk heterojunction film is 250-550 nm.
Sb2(S,Se)3A substrate type heterojunction solar cell, the above Sb2(S,Se)3A substrate-type heterojunction film deposited on the electron transport layer, TiO2Multiple TiO in nanorod array2Nanorods vertically grown on the electron transport layer, In2S3A material layer deposited on the electron transport layer and wrapped on the TiO2Formation of TiO on nanorods2/In2S3Composite nanorod arrays, Sb2(S,Se)3The material layer wraps the TiO2/In2S3The composite nano-rod array is filled in the middle gap to form TiO2/In2S3/Sb2(S,Se)3An inorganic type heterojunction thin film.
An anode, an electron transport layer and Sb are sequentially deposited on the glass lining base2(S,Se)3A substrate type heterojunction film and an organic hole transport layer, wherein the anode of the solar cell is an FTO or ITO layer, and the electron transport layer is TiO2The organic hole transport layer is a Spiro-OMeTAD film, and the cathode of the solar cell is an Au or Ag film.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described are combined in any suitable manner in any one or more embodiments or examples.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (7)
1.Sb2(S,Se)3The matrix type heterojunction film is characterized in that: sb2(S,Se)3The material layer being filled with TiO2/In2S3And compounding the nanorod array and wrapping the nanorod array to form the three-dimensional heterojunction film.
2. The Sb of claim 12(S,Se)3A substrate-type heterojunction film characterized in that TiO2/In2S3The composite nanorod array forms an electron transmission channel, Sb2(S,Se)3The material layer is a light absorbing layer.
3. The Sb of claim 22(S,Se)3A substrate-type heterojunction film characterized in that TiO2The thickness of the nanorod array is 200-500nm, the diameter of the nanorod is 20-80nm, and TiO is2The number density of the nano-rods is 50-200/mum2，In2S3The thickness of the film layer is 10-100nm, Sb2(S,Se)3The thickness of the film layer is 100-300nm, TiO2/In2S3/Sb2(S,Se)3The thickness of the bulk heterojunction film is 250-550 nm.
4.Sb2(S,Se)3Matrix-type heterojunction solar cell comprising the Sb according to any one of claims 1 to 32(S,Se)3The matrix type heterojunction film is characterized in that: sb2(S,Se)3A substrate-type heterojunction film deposited on the electron transport layer, TiO2Multiple TiO in nanorod array2Nanorods vertically grown on the electron transport layer, In2S3A material layer deposited on the electron transport layer and wrapped on the TiO2Formation of TiO on nanorods2/In2S3Composite nanorod arrays, Sb2(S,Se)3The material layer wraps the TiO2/In2S3The composite nano-rod array is filled in the middle gap to form TiO2/In2S3/Sb2(S,Se)3An inorganic type heterojunction thin film.
5. The Sb of claim 42(S,Se)3The matrix type heterojunction solar cell is characterized in that: an anode, an electron transport layer and Sb are sequentially deposited on the glass lining base2(S,Se)3A substrate type heterojunction film and an organic hole transport layer, wherein the anode of the solar cell is an FTO or ITO layer, and the electron transport layer is TiO2The organic hole transport layer is a Spiro-OMeTAD film, and the cathode of the solar cell is an Au or Ag film.
6. Method for the preparation of a battery, for the preparation of Sb as defined in claim 52(S,Se)3A substrate-type heterojunction solar cell, comprising the steps of:
step one, etching an ITO or FTO layer on conductive glass into a required shape by using concentrated hydrochloric acid and Zn powder, cleaning and drying, and depositing TiO with the thickness of 50-100nm on the ITO or FTO layer2A nanoparticle film;
step two, uniformly mixing water and concentrated hydrochloric acid according to the volume ratio of 0.5-1.5:1, then adding tetrapropyl titanate and fully stirring uniformly, wherein the tetrapropyl titanate and the hydrochloric acid-waterThe volume ratio of the mixture of (A) to (B) is 1-2: 100; pouring the prepared reaction solution into an autoclave, and depositing TiO2The conductive glass surface of the nano-particle film is suspended in the reaction solution in a downward way, the reaction kettle is sealed and then is placed at the temperature of 150 ℃ and 190 ℃ for reaction for 1 to 3 hours, and finally the reaction kettle is placed in the TiO2Growing TiO on the nano-particle film2A nanorod array;
step three, InCl is added at room temperature3·4H2O in N, N-dimethylformamide, InCl3·4H2O with the concentration of 0.3-0.5mol/L, then adding thiourea, stirring for 1-3 hours at room temperature to obtain In2S3Reaction precursor solution of InCl3·4H2The molar ratio of O to thiourea is 1: 2-4; in is mixed with2S3TiO obtained by dropping reaction precursor solution in the second step2Spin coating the nanorod array film to form a film, repeating the spin coating for 1-3 times, and then carrying out heat treatment for 5-15 minutes at the temperature of 240 ℃ and 300 ℃ under the protection of inert gas; after the heat treatment is finished, the sample is naturally cooled to room temperature to obtain TiO2/In2S3Compounding a nanorod array film;
step four, fully mixing selenium powder and antimony trisulfide powder according to a molar ratio of 0-2:1, placing the mixed powder serving as an evaporation source material into an evaporation boat of an evaporation coating instrument, and obtaining TiO in step three2/In2S3The composite nanorod array film sample is placed right above the evaporation boat, and the film sample is heated to 200-300 ℃ under the protection of certain vacuum or inert gas, and thermal evaporation is carried out to Sb2(S,Se)3Deposition of a layer of material onto TiO2/In2S3Filling the gap on the composite nano-rod array to form TiO2/In2S3/Sb2(S,Se)3A bulk heterojunction thin film;
step five, spin-coating a layer of mixture solution of SpiroOMeTAD, LiTFSI and TBP with the concentration of 30-80mg/mL on the body type heterojunction thin film obtained in the step four, and carrying out heat treatment for 5-15 minutes at the temperature of 50-150 ℃ in the air to obtain a Spiro-OMeTAD hole transport layer thin film; continuously evaporating an Au or Ag film by a thermal evaporation method to obtain Sb2(S,Se)3A matrix-type heterojunction solar cell.
7. The battery production method according to claim 6, characterized in that: sb in step four2(S,Se)3The vapor deposition of the material layer is carried out in a tube furnace or a box furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210226615.0A CN114597272B (en) | 2022-03-09 | 2022-03-09 | Sb 2 (S,Se) 3 Matrix heterojunction film, solar cell and cell preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210226615.0A CN114597272B (en) | 2022-03-09 | 2022-03-09 | Sb 2 (S,Se) 3 Matrix heterojunction film, solar cell and cell preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114597272A true CN114597272A (en) | 2022-06-07 |
| CN114597272B CN114597272B (en) | 2024-02-09 |
Family
ID=81815669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210226615.0A Active CN114597272B (en) | 2022-03-09 | 2022-03-09 | Sb 2 (S,Se) 3 Matrix heterojunction film, solar cell and cell preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114597272B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102842676A (en) * | 2012-06-25 | 2012-12-26 | 中国科学院等离子体物理研究所 | TiO2-CuInS2 core-shell nanorod array-based organic/inorganic hybrid solar battery and manufacturing method thereof |
| US20130048062A1 (en) * | 2011-08-29 | 2013-02-28 | Korea Institute Of Science And Technology | Solar cell comprising bulk heterojunction inorganic thin film and fabrication of the solar cell |
| CN103151462A (en) * | 2013-01-18 | 2013-06-12 | 中国科学院等离子体物理研究所 | Organic/inorganic hybridization solar cell based on TiO2 homogeneous nuclear shell nano array and preparation method thereof |
| CN103367512A (en) * | 2013-06-27 | 2013-10-23 | 中国科学院等离子体物理研究所 | Solar battery based on inorganic bulk heterojunction and preparation method thereof |
| US20140202527A1 (en) * | 2013-01-23 | 2014-07-24 | Research & Business Foundation Sungkyunkwan University | Solar cell and method of manufacturing the solar cell |
| CN111847500A (en) * | 2020-07-28 | 2020-10-30 | 长沙理工大学 | Indium sulfide thin film and preparation method thereof, and inorganic perovskite solar cell based on indium sulfide thin film and preparation method thereof |
| CN114050189A (en) * | 2021-11-10 | 2022-02-15 | 苏州腾晖光伏技术有限公司 | Selenium antimony sulfide thin film solar cell with 3D structure and preparation method thereof |
-
2022
- 2022-03-09 CN CN202210226615.0A patent/CN114597272B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130048062A1 (en) * | 2011-08-29 | 2013-02-28 | Korea Institute Of Science And Technology | Solar cell comprising bulk heterojunction inorganic thin film and fabrication of the solar cell |
| CN102842676A (en) * | 2012-06-25 | 2012-12-26 | 中国科学院等离子体物理研究所 | TiO2-CuInS2 core-shell nanorod array-based organic/inorganic hybrid solar battery and manufacturing method thereof |
| CN103151462A (en) * | 2013-01-18 | 2013-06-12 | 中国科学院等离子体物理研究所 | Organic/inorganic hybridization solar cell based on TiO2 homogeneous nuclear shell nano array and preparation method thereof |
| US20140202527A1 (en) * | 2013-01-23 | 2014-07-24 | Research & Business Foundation Sungkyunkwan University | Solar cell and method of manufacturing the solar cell |
| CN103367512A (en) * | 2013-06-27 | 2013-10-23 | 中国科学院等离子体物理研究所 | Solar battery based on inorganic bulk heterojunction and preparation method thereof |
| CN111847500A (en) * | 2020-07-28 | 2020-10-30 | 长沙理工大学 | Indium sulfide thin film and preparation method thereof, and inorganic perovskite solar cell based on indium sulfide thin film and preparation method thereof |
| CN114050189A (en) * | 2021-11-10 | 2022-02-15 | 苏州腾晖光伏技术有限公司 | Selenium antimony sulfide thin film solar cell with 3D structure and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| KELIN LI，ET AL: "Fabrication of closed-space sublimation Sb2(S1-xSex)3 thin-film based on a single mixed powder source for photovoltaic application", 《OPTICAL MATERIALS》, vol. 122, pages 1 - 10 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114597272B (en) | 2024-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chen et al. | SnO2-based electron transporting layer materials for perovskite solar cells: A review of recent progress | |
| Parize et al. | ZnO/TiO2/Sb2S3 core–shell nanowire heterostructure for extremely thin absorber solar cells | |
| Gonzalez-Valls et al. | Vertically-aligned nanostructures of ZnO for excitonic solar cells: a review | |
| CN102148332B (en) | Preparation method of semiconductor nano-wire-based organic/inorganic composite solar cell | |
| CN110844936A (en) | Preparation method of antimony trisulfide nanorod array and solar cell based on antimony trisulfide nanorod array | |
| CN108123000A (en) | A kind of nano-rod shaped antimony selenide solar cell and preparation method thereof | |
| CN103367512A (en) | Solar battery based on inorganic bulk heterojunction and preparation method thereof | |
| Gan et al. | TiO2 nanorod arrays functionalized with In2S3 shell layer by a low-cost route for solar energy conversion | |
| Sharif et al. | A comprehensive review on the current progress and material advances in perovskite solar cells | |
| CN113314672A (en) | Perovskite solar cell and preparation method thereof | |
| CN102169910A (en) | Thin film solar cell based on sulfur compound nanocrystalline | |
| CN107732014B (en) | Solar cell based on ternary inorganic body type heterojunction thin film and preparation method thereof | |
| CN107887475A (en) | Preparation method of tungsten oxide electron transfer layer and products thereof and application | |
| CN114597272B (en) | Sb 2 (S,Se) 3 Matrix heterojunction film, solar cell and cell preparation method thereof | |
| Zhang et al. | TiO 2/Sb 2 S 3/P3HT Based Inorganic–Organic Hybrid Heterojunction Solar Cells with Enhanced Photoelectric Conversion Performance | |
| CN108806990B (en) | High-efficiency photo-anode based on II-type CdSe/CdTe quantum well and preparation method thereof | |
| CN115275026A (en) | 2D/3D perovskite solar cell and preparation method thereof | |
| CN111755256B (en) | Preparation method of three-dimensional ZnO/CuO nano heterogeneous hierarchical structure photoelectrode | |
| CN112563118B (en) | In-doped CdS film, preparation method and CIGS cell prepared by same | |
| CN107369729B (en) | A kind of nano ordered interpenetrating total oxygen compound hetero-junction thin-film solar cell and preparation method thereof | |
| CN107887513B (en) | Solar cell based on ternary inorganic flat heterojunction thin film and preparation method thereof | |
| Feng et al. | Fabrication of TiO 2 nanorods/nanoparticles mixed phase structure via a simple dip-coating method and its application in perovskite solar cells | |
| Hasan et al. | Integration of NiO Layer as Hole Transport Material in Perovskite Solar Cells | |
| KR101706175B1 (en) | Ppreparation method of light absorbing layer for compound semiconductor solar cell and light absorbing layer for compound semiconductor solar cell prepared by the method | |
| CN112885711A (en) | Compact Sb2S3Preparation method of thin film and solar cell based on thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |