CN114597064A - Power film capacitor integrating EMC BOOST assembly and direct current supporting function - Google Patents

Power film capacitor integrating EMC BOOST assembly and direct current supporting function Download PDF

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Publication number
CN114597064A
CN114597064A CN202210222921.7A CN202210222921A CN114597064A CN 114597064 A CN114597064 A CN 114597064A CN 202210222921 A CN202210222921 A CN 202210222921A CN 114597064 A CN114597064 A CN 114597064A
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China
Prior art keywords
electrode bus
capacitor
electrode
bar
bus
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Pending
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CN202210222921.7A
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Chinese (zh)
Inventor
刘斌
李贵生
杜野
黄小华
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Shenzhen Hoverbird Electronic Technology Co ltd
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Shenzhen Hoverbird Electronic Technology Co ltd
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Priority to CN202210222921.7A priority Critical patent/CN114597064A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/14Protection against electric or thermal overload
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/22Electrostatic or magnetic shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/228Terminals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02TCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00Road transport of goods or passengers
    • Y02T10/60Other road transportation technologies with climate change mitigation effect
    • Y02T10/7072Electromobility specific charging systems or methods for batteries, ultracapacitors, supercapacitors or double-layer capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Propulsion And Braking For Vehicles (AREA)

Abstract

The invention discloses a power film capacitor integrating an EMC BOOST assembly and a direct current supporting function, which comprises 2 groups of core groups C1, C2 and 6 groups of electrode busbars, an EMI assembly consisting of a plurality of NTC temperature sensors, a pair of common mode Y2 capacitors CY1, CY2 and a magnetic ring L, a shell and an upper cover, wherein B-B, C-C penetrates through an EMI magnetic ring positioned at the outer side and is respectively welded with the anode and the cathode of the pair of common mode EMI capacitors CY1 and CY2 in series connection, and a middle terminal grounding electrode D-D is connected in series; the electrodes A-A and B-B are designed in parallel at the IGBT terminal, and all external terminals are designed into through holes with the diameter of 8 mm. The thin film capacitor disclosed by the invention has the functions of EMI filtering, BOOST boosting, direct current supporting and temperature monitoring; and simultaneously, interfaces are provided for an external battery, an IGBT, a boost inductor and a passive bleeder resistor.

Description

Power film capacitor integrating EMC BOOST assembly and direct current supporting function
Technical Field
The invention relates to the technical field of film capacitors, in particular to a power film capacitor integrating an EMC BOOST component and a direct current supporting function.
Background
The direct-current supporting capacitor DC-Link is required in the circuit topology of the motor controller of the electric automobile, the direct-current supporting capacitor DC-Link has 2 functions, the first function is to provide ripple current with large amplitude for the operation of the IGBT of a switching device, the second function is to filter out higher harmonics generated in the operation of the IGBT switch, and a power type thin film capacitor with certain rated voltage and rated capacity can be generally selected.
The charging time required by the charging technology of the electric automobile is as short as possible, which requires a high-voltage and high-current system, but the high-voltage of the battery system is limited by various aspects of materials, devices and safety. The BOOST of the BOOST circuit is an effective method for solving the problems, the BOOST of high voltage and high power adopts the inductance type DC-DC conversion principle, and the circuit topology generally comprises an inductor, a capacitor, a switching device and a diode.
Disclosure of Invention
The invention aims to provide an integrated BOOST capacitor which is matched with a BOOST circuit, so that the technical problem of long battery charging time is solved.
In order to solve the technical problems, the invention adopts the technical scheme that: a power film capacitor integrating an EMC BOOST assembly and a DC support function,
the capacitor-type common-mode capacitor comprises a capacitor C1, a capacitor C2, an electrode bus A-A, an electrode bus B-B, an electrode bus C-C, an electrode bus D-D, a magnetic ring L, a temperature sensor and a pair of common-mode capacitors;
the capacitor C1 comprises a plurality of cores, the anodes of the cores are welded on the electrode bus-bars B-B one by one, and the cathodes of the cores are welded on the electrode bus-bars A-A one by one;
the negative electrode of the capacitor C2 is welded on the busbar electrode bus A-A, and the positive electrode is welded on the electrode bus C-C;
the electrode bus bar B-B and the electrode bus bar A-A are respectively provided with 6 IGBT wiring terminals for connecting external IGBTs;
the electrode bus A-A is also provided with a connecting terminal for connecting an external bleeder resistor;
the electrode busbar A-A and the electrode busbar C-C are also provided with connecting terminals for connecting the battery pack:
the magnetic ring L is sleeved on the outer side of the connecting terminal of the connecting battery pack, wherein the electrode bus A-A and the electrode bus C-C are positioned on the outer side of the connecting terminal of the connecting battery pack;
the common mode capacitor comprises a capacitor CY1 and a capacitor CY2, one end of the capacitor CY1 is connected with the electrode bus-bar C-C, the other end of the capacitor CY1 is connected with the electrode bus-bar D-D, one end of the capacitor CY2 is connected with the electrode bus-bar A-A, and the other end of the capacitor CY2 is connected with the electrode bus-bar D-D; the electrode bus-bar D-D is provided with a grounding terminal;
a temperature sensor is provided in the core of the capacitor C1.
Further, the device also comprises a shell, electrode busbars E-E and electrode busbars F-F; two connecting terminals are respectively arranged on the electrode bus bar E-E and the electrode bus bar F-F; the capacitor C1, the capacitor C2, the electrode bus A-A, the electrode bus B-B, the electrode bus C-C, the electrode bus D-D, the magnetic ring L, the temperature sensor, the electrode bus E-E and the electrode bus F-F are arranged in the shell, connecting terminals on the electrode bus extend out of the shell, and the electrode bus E-E and the electrode bus F-F are arranged between the capacitor C1, the capacitor C2, the electrode bus A-A, the electrode bus B-B, the electrode bus C-C, the electrode bus D-D, the magnetic ring L and the temperature sensor in an insulating mode.
The electrode bus bar comprises an electrode bus bar body A-A, an electrode bus bar B-B and an IGBT wiring terminal on the electrode bus bar body A-A are parallel to each other, the IGBT wiring terminal of the electrode bus bar B-B and the IGBT wiring terminal on the electrode bus bar body A-A are arranged at intervals, a through hole is formed in the upper cover plate, the IGBT wiring terminal penetrates through the through hole, and the upper cover plate is covered with the shell.
Furthermore, the electrode bus bars E-E and the electrode bus bars F-F are embedded in the shell through injection molding.
The technical scheme shows that the invention has the following advantages: the thin film capacitor disclosed by the invention has the functions of EMI filtering, BOOST boosting, direct current supporting and temperature monitoring; and meanwhile, interfaces are reserved for an external battery, an IGBT, a boost inductor and a passive bleeder resistor.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of the welding of capacitors C1 and C2 with electrode busbars A-A, B-B and C-C according to the present invention;
FIG. 3 is an assembly diagram of the magnetic ring and the common mode capacitor shown in FIG. 2;
fig. 4 is a schematic circuit diagram of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings.
The structure diagram of the invention is shown in fig. 1-3, and the structure diagram comprises a capacitor C1, a capacitor C2, an electrode bus A-A, an electrode bus B-B, an electrode bus C-C, an electrode bus D-D, a magnetic ring L, a temperature sensor and a pair of common mode capacitors.
The capacitor C1 comprises 8 cores, the anodes of the cores are welded on the electrode bus bars B-B one by one, the cathodes of the cores are welded on the electrode bus bars A-A one by one, and a temperature sensor is arranged in each core and used for detecting the temperature, so that the internal working temperature of the capacitor can be monitored at any time. The capacitor C1 may be of the 500VDC 200uF specification.
The capacitor C2 is a DC-Link capacitor, the specification adopted in the embodiment is 800VDC 1000uF, 8 cores are provided, the negative electrode is welded on the busbar electrode bus A-A, and the positive electrode is welded on the busbar electrode B-B.
The electrode bus bar B-B and the electrode bus bar A-A are respectively provided with 6 IGBT wiring terminals for connecting external IGBTs;
the electrode bus A-A is also provided with a connecting terminal for connecting an external bleeder resistor;
the electrode bus-bar A-A and the electrode bus-bar C-C are also provided with connecting terminals for connecting the battery pack.
The magnetic ring L is sleeved on the outer sides of the connecting terminals of the electrode busbars A-A and C-C for connecting the battery pack, and the magnetic ring is a ferrite magnetic ring. The common mode capacitor comprises a capacitor CY1 and a capacitor CY2, one end of the capacitor CY1 is connected with the electrode bus-C, the other end of the capacitor CY1 is connected with the electrode bus-D, one end of the capacitor CY2 is connected with the electrode bus-A, and the other end of the capacitor CY2 is connected with the electrode bus-D; and the electrode busbar D-D is provided with a grounding terminal. The magnetic ring L and the common mode capacitor form an EMI assembly, and the EM I problem easily caused by the quick switching action of the IGBT in the inverter can be effectively filtered.
The invention also comprises a shell, electrode busbars E-E and electrode busbars F-F. Two connecting terminals are respectively arranged on the electrode bus-bar E-E and the electrode bus-bar F-F. The capacitor C1, the capacitor C2, the electrode bus A-A, the electrode bus B-B, the electrode bus C-C, the electrode bus D-D, the magnetic ring L and the temperature sensor are assembled and then embedded into the shell, wherein the electrode bus E-E and the electrode bus F-F are embedded into the shell in an injection molding mode, and the electrode bus E-E and the electrode bus F-F are ensured to be arranged in an insulating mode with the capacitor C1, the capacitor C2, the electrode bus A-A, the electrode bus B-B, the electrode bus C-C, the electrode bus D-D, the magnetic ring L and the temperature sensor. The connecting terminals on the electrode bus bar extend out of the shell.
The electrode bus bar is characterized by further comprising an upper cover plate, the electrode bus bar B-B and the LGBT wiring terminal on the electrode bus bar A-A are parallel to each other, the IGBT wiring terminal of the electrode bus bar B-B and the IGBT wiring terminal on the electrode bus bar A-A are arranged at intervals, a through hole is formed in the upper cover plate, the IGBT wiring terminal penetrates through the through hole, the upper cover plate is filled with silica gel, penetrates through the A-A and the B-B to be connected with the IGBT terminal, and then is fixed on the shell through screws.
The assembled circuit schematic of the present invention is shown in fig. 4. The thin film capacitor disclosed by the invention has the functions of EMI filtering, BOOST boosting, direct current supporting and temperature monitoring; meanwhile, an interface is reserved for an external battery, an IGBT, a boost inductor and a passive bleeder resistor.

Claims (4)

1. A power film capacitor integrating an EMC BOOST component and a direct current support function is characterized in that:
the circuit comprises a capacitor C1, a capacitor C2, an electrode bus A-A, an electrode bus B-B, an electrode bus C-C, an electrode bus D-D, a magnetic ring L, a temperature sensor and a pair of common-mode capacitors;
the capacitor C1 comprises a plurality of cores, the anodes of the cores are welded on the electrode bus-bars B-B one by one, and the cathodes of the cores are welded on the electrode bus-bars A-A one by one;
the negative electrode of the capacitor C2 is welded on the busbar electrode bus A-A, and the positive electrode is welded on the electrode bus C-C;
six IGBT wiring terminals for connecting with external IGBTs are respectively arranged on the electrode bus-bar B-B and the electrode bus-bar A-A; the electrode bus A-A is also provided with a connecting terminal for connecting an external bleeder resistor;
the electrode busbar A-A and the electrode busbar C-C are also provided with connecting terminals for connecting the battery pack:
the magnetic ring L is sleeved on the electrode bus A-A and the electrode bus C-C and is positioned outside a connecting terminal for connecting the battery pack;
the common mode capacitor comprises a capacitor CY1 and a capacitor CY2, one end of the capacitor CY1 is connected with the electrode bus-C, the other end of the capacitor CY1 is connected with the electrode bus-D, one end of the capacitor CY2 is connected with the electrode bus-A, and the other end of the capacitor CY2 is connected with the electrode bus-D; the electrode bus-bar D-D is provided with a grounding terminal;
a temperature sensor is provided in the core of the capacitor C1.
2. The integrated EMC BOOST assembly and DC support function power film capacitor of claim 1, wherein: the device also comprises a shell, electrode busbars E-E and electrode busbars F-F; two connecting terminals are respectively arranged on the electrode bus bar E-E and the electrode bus bar F-F; the capacitor C1, the capacitor C2, the electrode bus A-A, the electrode bus B-B, the electrode bus C-C, the electrode bus D-D, the magnetic ring L, the temperature sensor, the electrode bus E-E and the electrode bus F-F are arranged in the shell, connecting terminals on the electrode bus extend out of the shell, and the electrode bus E-E and the electrode bus F-F are arranged between the capacitor C1, the capacitor C2, the electrode bus A-A, the electrode bus B-B, the electrode bus C-C, the electrode bus D-D, the magnetic ring L and the temperature sensor in an insulating mode.
3. The integrated EMC BOOST assembly and DC support function power film capacitor of claim 2, wherein: the electrode bus bar is characterized by further comprising an upper cover plate, the electrode bus bar B-B and the IGBT wiring terminals on the electrode bus bar A-A are parallel to each other, the IGBT wiring terminals of the electrode bus bar B-B and the IGBT wiring terminals on the electrode bus bar A-A are arranged at intervals, through holes are formed in the upper cover plate, the IGBT wiring terminals penetrate through the through holes, and the upper cover plate is covered with the shell.
4. The integrated EMC BOOST assembly and DC support function power film capacitor of claim 2, wherein: the electrode bus bars E-E and the electrode bus bars F-F are embedded in the shell through injection molding.
CN202210222921.7A 2022-03-09 2022-03-09 Power film capacitor integrating EMC BOOST assembly and direct current supporting function Pending CN114597064A (en)

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115101343A (en) * 2022-06-29 2022-09-23 一巨自动化装备(上海)有限公司 Thin film capacitor structure with Boost function and using method thereof
CN118969422A (en) * 2024-10-16 2024-11-15 深圳汇北川科技股份有限公司 A film capacitor with integrated online detection EMC and BOOST boost function

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100011033A (en) * 2008-07-24 2010-02-03 현대자동차주식회사 Structure of dc input film capacitor in inverter for improving cooling performance
CN105529188A (en) * 2014-11-28 2016-04-27 比亚迪股份有限公司 Thin-film capacitor
CN207852484U (en) * 2017-12-13 2018-09-11 常州常捷科技有限公司 A kind of metallic film filter capacitor monitoring internal temperature
CN211830576U (en) * 2020-05-29 2020-10-30 无锡中汇汽车电子科技有限公司 Capacitor of integrated EMI filtering module for electric vehicle motor controller
CN113765460A (en) * 2020-06-04 2021-12-07 比亚迪股份有限公司 Integrated capacitor, motor controller and vehicle

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100011033A (en) * 2008-07-24 2010-02-03 현대자동차주식회사 Structure of dc input film capacitor in inverter for improving cooling performance
CN105529188A (en) * 2014-11-28 2016-04-27 比亚迪股份有限公司 Thin-film capacitor
CN207852484U (en) * 2017-12-13 2018-09-11 常州常捷科技有限公司 A kind of metallic film filter capacitor monitoring internal temperature
CN211830576U (en) * 2020-05-29 2020-10-30 无锡中汇汽车电子科技有限公司 Capacitor of integrated EMI filtering module for electric vehicle motor controller
CN113765460A (en) * 2020-06-04 2021-12-07 比亚迪股份有限公司 Integrated capacitor, motor controller and vehicle

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115101343A (en) * 2022-06-29 2022-09-23 一巨自动化装备(上海)有限公司 Thin film capacitor structure with Boost function and using method thereof
CN115101343B (en) * 2022-06-29 2024-05-10 一巨自动化装备(上海)有限公司 Film capacitor structure with Boost function and application method thereof
CN118969422A (en) * 2024-10-16 2024-11-15 深圳汇北川科技股份有限公司 A film capacitor with integrated online detection EMC and BOOST boost function
CN118969422B (en) * 2024-10-16 2025-01-28 深圳汇北川科技股份有限公司 A film capacitor with integrated online detection EMC and BOOST boost function

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Country or region after: China

Address after: 518000 3201, block a, building 6, Shenzhen International Innovation Valley, Dashi 1st Road, Xili community, Xili street, Nanshan District, Shenzhen, Guangdong

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Address before: 518000 3201, block a, building 6, Shenzhen International Innovation Valley, Dashi 1st Road, Xili community, Xili street, Nanshan District, Shenzhen, Guangdong

Applicant before: SHENZHEN HOVERBIRD ELECTRONIC TECHNOLOGY Co.,Ltd.

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