CN114594664B - Method, system and equipment for optimizing wafer scanning path and wafer detection method - Google Patents
Method, system and equipment for optimizing wafer scanning path and wafer detection method Download PDFInfo
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Abstract
The invention provides a method, a system and equipment for optimizing a wafer scanning path and a wafer detection method, belonging to the technical field of semiconductor wafer detection, wherein the method for optimizing the wafer scanning path establishes an inequality model by taking the scanning quantity and the actual overlapping area as parameters to be optimized according to the limit conditions of an area to be scanned, a scanning imaging view and the overlapping area as constant parameters; and performing integer solution on the inequality model to obtain the plan of the scanning path with the least number of scanned pictures and the largest overlapping area of two adjacent imaging fields under the same condition. The method does not need to change any hardware, can effectively save the scanning time of the whole wafer, and reduces the processing quantity and the storage capacity of the imaging view field images.
Description
Technical Field
The invention belongs to the technical field of semiconductor wafer detection, and particularly relates to a method, a system and equipment for optimizing a wafer scanning path and a wafer detection method.
Background
In the semiconductor chip manufacturing process, wafers are the most important material, and more than 90% of the electronic devices on the market are manufactured on the basis of wafers. Thus, the throughput of wafers has a significant impact on the overall integrated circuit industry. Currently, the mainstream of the wafers is 300mm (12 inches), 200mm (8 inches), 150mm (6 inches) and 100mm (4 inches), wherein the market share of the 12-inch wafers reaches 78%, and the wafers become the mainstream of the market. Since the surface of the wafer directly affects the processing performance of the device, the surface is not allowed to have any defects; in the industrial production process, a detection system is required to carry out real-time detection, the problem of high detection difficulty exists, and non-contact optical detection is generally adopted in the prior art.
In the non-contact optical detection process, the size of the wafer is large, so that a general optical system cannot directly obtain a complete wafer image and can only obtain an image of a local view on the premise of considering the minimum detection precision. Therefore, in order to obtain a complete wafer image, a scanning shooting technique is generally adopted: and planning a scanning path according to the size of the wafer, carrying out image scanning acquisition by taking a plurality of scanning points as centers, imaging one by one, and finally combining to obtain a complete wafer image. As shown in fig. 1, the overall image of the wafer is shown, and the rectangular area in the figure is the local view image. Meanwhile, because the detection of the wafer has the requirement of real-time performance, the fewer the scanned images, the better. Therefore, the fewer redundant images obtained by scanning are better, on one hand, the scanning time and the image shooting time can be reduced, on the other hand, the data volume of the images is also reduced, and the pressure of hard disk storage and the pressure of subsequent detection algorithms are reduced. Therefore, in the production inspection process, an optimized scan path planning method is urgently needed, which can ensure that each small image in a wafer can be scanned, and can also ensure that the number of scanned images is minimum, so that the scanning time and the subsequent image processing time can be minimum.
In the existing technical scheme, two detection scanning methods are adopted: 1. firstly, planning a scanning path in advance according to the size of the wafer and the calibrated central position. And then in the process of each production detection, the wafer is moved to the calibrated central position through the alignment system to be scanned according to a preset scanning path. 2. Firstly, a positioning camera is used for obtaining the position of a wafer, then the scanning path is planned according to the size and the central position of the wafer, and then scanning is carried out according to the scanning path. Both methods essentially require the generation of a scan path based on a certain wafer size and the overlapping area of two adjacent imaging fields of view, which are set in advance. The specific method comprises the following steps:
step1 obtaining the location and area of the waferRegion 0 And obtaining the external rectangle of the outer contour edge of the wafer in the horizontal directionRect 0 Region of interestRegion 0 The circumscribed rectangle is a circular area in FIG. 2, and the circumscribed rectangle can beRect 0 So as to be similar to that in FIG. 2A rectangular area with tangent circular areas;
step 2: to avoid generating errors in the scanning process, the rectangular area is circumscribedRect 0 Performing external expansion to obtain a rectangular regionRect 1 Expanding rectangular areaRect 1 Is the overall rectangular area in fig. 2;
step 3: according to the hardware condition of the scanning device, the imaging visual field of each shootingrectAs a unit area, and overlapping areas of adjacent imaging fields of view are setoverlapThereby obtaining an external rectangular areaRect 1 The distribution rectangular region of all imaging fields of view inrect（rect 0 ，rect 0 ，rect 2 ，，，rect N ）；
Step 4: imaging a field of view from a distributionrect N The region where the wafer is locatedRegion 0 Whether the intersections determine whether to remain. As shown in FIG. 2, there is an imaging field of view that intersects the waferrect N A reservation is made to form the final scan trajectory.
Thus, the prior art, while considering the number of pictures to be saved as much as possible, does not achieve an optimal imaging field of viewrect N The distribution planning increases the time and the scanning space of scanning imaging, and the detection efficiency is low and is complex.
Disclosure of Invention
In view of the above drawbacks and needs of the prior art, the present invention provides a method, a system, a device and a method for optimizing a wafer scan path, which can rapidly plan a scan path of a wafer, so as to obtain fewer images by scanning and maximize an overlapping area between adjacent imaging fields.
To achieve the above object, according to a first aspect of the present invention, there is provided a method for optimizing a scan path of a wafer, including:
acquiring an image of an area where a wafer to be scanned is located, determining an external rectangle of the outer contour edge of the wafer in the image in the horizontal direction, and expanding the external rectangle outwards to obtain the area to be scanned of the wafer;
setting the width of an imaging visual field of a scanning device in a first direction and a second direction; setting the width of the minimum overlapping area between adjacent imaging visual fields in the first direction and the second direction;
establishing a first inequality set by taking the width of the region to be scanned, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view in the first direction as constant parameters and taking the imaging number of the imaging fields of view in the first direction and the width of the actual overlapping region between the adjacent imaging fields of view as optimized parameters;
obtaining the optimal focusing coordinates of all imaging visual fields in the current region to be scanned in the first direction by taking the first inequality group as a constraint condition, and thus obtaining a first distribution region of each imaging visual field in the first direction;
respectively extracting a minimum rectangular area completely overlapped with the wafer image in each first distribution area as a second distribution area;
establishing a corresponding second inequality set by taking the width of each second distribution region, the imaging visual field and the minimum overlapping region between the adjacent imaging visual fields in the second direction as constant parameters and taking the imaging quantity of the imaging visual fields in the second direction and the width of the actual overlapping region between the adjacent imaging visual fields as optimization parameters;
and obtaining the optimal focusing positions of all the imaging visual fields in each second distribution area by taking the second inequality group as a constraint condition, and forming a scanning path according to the optimal focusing positions.
Further, the establishing a first inequality set by taking the width of the region to be scanned, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view in the first direction as a constant parameter and taking the imaging number of the imaging fields of view and the width of the actual overlapping region between the adjacent imaging fields of view in the first direction as an optimization parameter includes:
establishing a first optimization inequality according to the fact that the width of the actual overlapping area in the first direction is larger than or equal to the width of the minimum overlapping area; and establishing a second optimization inequality according to the condition that the sum of the widths of the non-overlapped regions in the imaging visual fields in the first direction is greater than or equal to the width of the region to be scanned.
Further, the establishing a corresponding second inequality set by taking the width of each second distribution region, the imaging field of view, and the minimum overlapping region between adjacent imaging fields in the second direction as constant parameters, and taking the imaging number of the imaging fields in the second direction and the width of the actual overlapping region between adjacent imaging fields as optimized parameters includes:
establishing a third optimization inequality according to the fact that the width of the actual overlapping area in the second direction is larger than or equal to the width of the minimum overlapping area; and establishing a fourth optimization inequality according to the condition that the sum of the widths of the non-overlapping areas in the imaging visual fields in the second direction is greater than or equal to the width of the current second distribution area.
Further, the obtaining the optimal focus coordinate of all imaging fields in the current region to be scanned in the first direction by using the first inequality group as a constraint condition includes:
and calculating the imaging number of the imaging fields in the first direction and the width of an actual overlapping region between adjacent imaging fields, and determining the optimal focusing coordinate of each imaging field in the first direction.
Further, the obtaining the optimal focusing positions of all the imaging fields of view in each of the second distribution regions by using the second inequality set as a constraint condition includes:
and respectively calculating the imaging quantity of the imaging visual fields in the second direction in each second distribution area and the width of an actual overlapping area between adjacent imaging visual fields, and determining the optimal focusing coordinate of each imaging visual field in the second direction.
Further, the outward expansion width of the circumscribed rectangle in the first direction is set to be 1/20-1/5 of the width of the imaging field of view in the first direction.
Further, the outward expansion width of the circumscribed rectangle in the second direction is set to be 1/20-1/5 of the width of the imaging field of view in the second direction.
According to a second aspect of the present invention, there is provided a system for optimizing a wafer scanning path, applying the method as described above, the system comprising: the device comprises an acquisition module, a setting module, a first optimization module, a first calculation module, an extraction module, a second optimization module and a second calculation module; the acquisition module is used for acquiring an image of an area where a wafer to be scanned is located, determining a circumscribed rectangle of the outer contour edge of the wafer in the image in the horizontal direction, and expanding the circumscribed rectangle outwards to obtain the area to be scanned of the wafer; the setting module is used for setting the width of an imaging visual field of the scanning device in a first direction and a second direction; setting the width of the minimum overlapping area between adjacent imaging visual fields in the first direction and the second direction; the first optimization module is used for establishing a first inequality set by taking the width of the region to be scanned, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view in the first direction as constant parameters and taking the imaging quantity of the imaging field of view in the first direction and the width of the actual overlapping region between the adjacent imaging fields of view as optimization parameters; the first calculation module is used for obtaining the optimal focusing coordinates of all imaging visual fields in the current region to be scanned in the first direction by taking the first inequality group as a constraint condition, and thus obtaining a first distribution region of each imaging visual field in the first direction; the extraction module is used for respectively extracting the smallest rectangular area which is completely overlapped with the wafer image in each first distribution area as a second distribution area; the second optimization module is used for establishing a corresponding second inequality set by taking the width of each second distribution region, the imaging visual field and the minimum overlapping region between the adjacent imaging visual fields in the second direction as constant parameters and taking the imaging quantity of the imaging visual fields in the second direction and the width of the actual overlapping region between the adjacent imaging visual fields as optimization parameters; the second calculation module is used for obtaining the optimal focusing positions of all the imaging fields in each second distribution area by taking the second inequality group as a constraint condition, and forming a scanning path according to the optimal focusing positions.
According to a third aspect of the present invention, there is provided an electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor implementing the steps of the method as described above when executing the computer program.
According to a fourth aspect of the present invention, there is provided a wafer inspection method, the method comprising:
providing a wafer, and acquiring a local scanning image in a corresponding detection area on the surface of the wafer by applying the optimization method of the wafer scanning path;
fusing and splicing the local scanning images to obtain a panoramic scanning image of the current detection area; and acquiring detection parameters of the surface of the wafer based on the panoramic scanning image.
Generally, compared with the prior art, the above technical solution conceived by the present invention has the following beneficial effects:
the invention provides a method, a system and equipment for optimizing a wafer scanning path and a wafer detection method aiming at the problem of generating a scanning track of wafer detection, wherein an inequality model is established to determine the optimal focusing coordinate of all imaging visual fields in the current area to be scanned in a first direction by taking the limited conditions of an area to be scanned, a scanning imaging visual field and an overlapping area in the first direction as constant parameters and taking the scanning number and the actual overlapping area as parameters to be optimized, and then the minimum rectangular area which is completely overlapped with a wafer image is extracted from the distribution area of each imaging visual field in the first direction; and establishing a corresponding inequality model by taking the width of the minimum rectangular region, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view in the second direction as a constant parameter and the imaging quantity of the imaging fields of view in the second direction and the width of the actual overlapping region between the adjacent imaging fields of view as optimization parameters, wherein the first direction and the second direction are mutually vertical horizontal directions, so that the optimal focusing positions of all the imaging fields of view are obtained, and a more optimal scanning track is obtained. The optimization method of the wafer scanning path does not need to change any hardware and software flow and consume no computing resource. Compared with the existing track generation method, the method can reduce the number of the scanned pictures on one hand, thereby effectively reducing the time for scanning, storing and operating the images; on the other hand, the overlapping area of adjacent imaging visual fields can be increased, so that the calculation processing of the splicing, fusion and positioning of the local scanning images of the wafer is easier, and the derived detection result is more accurate.
Drawings
FIG. 1 is a prior art image of an entire crystal formed by stitching scanned wafer partial images;
FIG. 2 is a layout diagram of an imaging field of view after a wafer scan path is planned, according to the prior art;
FIG. 3 is a flow chart of a method for optimizing a scan path of a wafer, implemented in accordance with the present invention;
FIG. 4 is a layout diagram of a first distribution area implemented according to embodiment 1 of the present invention;
fig. 5 is a layout diagram of a second distribution area realized according to embodiment 1 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
It should be noted that in the functional equations of the present invention, the symbol "+" is an operation symbol representing the multiplication of two constants or vectors before and after, and "/" is an operation symbol representing the division of two constants or vectors before and after, and all the functional equations of the present invention follow the mathematical operation of addition, subtraction, multiplication and division.
It should be noted that the term "first \ second" referred to in the present invention is only used for distinguishing similar objects, and does not represent a specific ordering for the objects, and it should be understood that "first \ second" may be interchanged in a specific order or sequence, if allowed. It should be understood that "first \ second" distinct objects may be interchanged under appropriate circumstances such that embodiments of the invention described herein may be practiced in sequences other than those described or illustrated herein.
The invention provides a method, a system and equipment for optimizing a wafer scanning path and a wafer detection method, aiming at rapidly planning the scanning path of a wafer, so that fewer images can be obtained by scanning on one hand, and the largest overlapping area can be formed between adjacent imaging fields on the other hand. Therefore, the scanning quantity in a certain direction is ensured to be as minimum as possible under the condition of the maximum overlapping area, and meanwhile, the larger the overlapping area is, the easier the splicing between the corresponding adjacent imaging fields is. Because the wafer image scanning is the scanning of a two-dimensional image, the invention converts the problem into the optimization of the scanning path in two vertical directions. Thus, for a certain one-dimensional direction, an optimized inequality model is established:
wherein the content of the first and second substances,nfor the number of images to be imaged for the field of view,w overlap the width of the actual overlapping area between adjacent imaging visual fields in a certain one-dimensional direction,W overlap the width of the minimum overlapping area between adjacent imaging visual fields in a certain one-dimensional direction,W sub to image the width of the field of view in a certain dimension,Wis the width of the area to be scanned; wherein the content of the first and second substances,n、w overlap for the unknown parameters that need to be optimized,W overlap 、W sub 、Wis a constant parameter that can be set according to actual scanning conditions.
From the above set of inequalities, one can further obtain:
it is known thatnIs a positive integer, so the solution of the above inequality formula can be simplified as:
wherein the functionceil（）Meaning that the rule of rounding is not followed, and 1 is added as long as there is a decimal that takes the value of the preceding integer, the functionmax（）Representing the value of the maximum value.
It is known thatnAndW overlap the arrangement of the imaging field of view in the one-dimensional scanning direction can be easily obtained, so that the scanning track can be obtained. Preferably, the imaging field of viewrect N For a rectangular area, as shown in fig. 3, a method for optimizing a wafer scanning path is provided, which includes;
s1: acquiring an image of an area where a wafer to be scanned is located, determining an external rectangle of the outer contour edge of the wafer in the image in the horizontal direction, and expanding the external rectangle outwards to obtain the area to be scanned of the wafer;
s2: setting the width of an imaging visual field of a scanning device in a first direction and a second direction; setting the width of the minimum overlapping area between adjacent imaging visual fields in the first direction and the second direction;
s3: establishing a first inequality set by taking the width of the region to be scanned, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view in the first direction as constant parameters and taking the imaging number of the imaging fields of view in the first direction and the width of the actual overlapping region between the adjacent imaging fields of view as optimized parameters;
s4: obtaining the optimal focusing coordinates of all imaging visual fields in the current region to be scanned in the first direction by taking the first inequality group as a constraint condition, and thus obtaining a first distribution region of each imaging visual field in the first direction;
s5: respectively extracting a minimum rectangular area completely overlapped with the wafer image in each first distribution area as a second distribution area;
s6: establishing a corresponding second inequality set by taking the width of each second distribution region, the imaging visual field and the minimum overlapping region between the adjacent imaging visual fields in the second direction as constant parameters and taking the imaging quantity of the imaging visual fields in the second direction and the width of the actual overlapping region between the adjacent imaging visual fields as optimization parameters;
s7: and obtaining the optimal focusing positions of all the imaging visual fields in each second distribution area by taking the second inequality group as a constraint condition, and forming a scanning path according to the optimal focusing positions.
According to the invention, the optimal focusing positions of all imaging visual fields are determined through the first direction and the second direction, so that the first direction and the second direction can be two vertical directions on the same horizontal plane, and a coordinate system is established to determine the optimal focusing coordinate; specifically, the present invention optimizes the scanning paths in the X, Y direction in the horizontal plane of the wafer area, thereby forming the following two embodiments:
example 1
The embodiment provides a method for optimizing a wafer scanning path, which comprises the following steps:
s1: obtaining a wafer image to be scannedRegion 0 Determining a circumscribed rectangle of the outer contour edge of the wafer in the image in the horizontal directionRect 0 And the external rectangle is expanded outwards to obtain the area to be scanned of the waferRect 1 （W x ， W y ）；
In this embodiment, the region to be scanned has widths Wx, Wy in both the X and Y directions, which may be setDetermining two vertical directions on a two-dimensional horizontal plane of the wafer image; preferably, the X direction and the Y direction are respectively parallel to the length and the width of the area to be scanned; more preferably, since the region to be scanned is rectangular, and any end point of the rectangle can be used as an origin, the width of the region to be scanned in the X direction and the Y directionW x ，W y The length and width of the rectangle are the same as those of the area to be scanned.
Preferably, the outward expansion width of the circumscribed rectangle in the X direction is set to be 1/20-1/5 of the width of the imaging visual field in the X direction; the outward expansion width of the circumscribed rectangle in the Y direction is set to be 1/20-1/5 of the width of the imaging visual field in the Y direction.
S2: setting the width of the imaging visual field of the scanning device in the X direction and the Y direction; setting the width of the minimum overlapping area between adjacent imaging visual fields in the X direction and the Y direction;
in the present embodiment, the imaging field of view is determined according to the hardware condition of the scanning apparatusrectAnd the imaging field of view corresponds to the width in the X directionW sub-x And width in the Y directionW sub-y (ii) a And setting the width of the minimum overlapping area in the X directionW overlap-x And width in the Y directionW overlap-x 。
S3: establishing a first inequality set by taking the width of the region to be scanned, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view in the Y direction as constant parameters and taking the imaging quantity of the imaging field of view in the Y direction and the width of the actual overlapping region between the adjacent imaging fields of view as optimized parameters;
in this embodiment, as shown in fig. 4, an inequality model is established in the Y direction, and a first optimization inequality is established according to the fact that the width of the actual overlapping region in the Y direction is greater than or equal to the width of the minimum overlapping region; and establishing a second optimization inequality according to the condition that the sum of the widths of the non-overlapping regions in the imaging visual fields in the Y direction is greater than or equal to the width of the current region to be scanned.
Specifically, the present embodiment preferentially selects the scanning path in the Y directionThe path is planned, as shown in FIG. 3, with the width of the area to be scanned in the Y direction/each columnW y Imaging field of viewrectWidth in Y direction/each columnW sub-y Width of minimum overlapping area between adjacent imaging visual fields in Y direction/each columnW overlap-y Is a known constant parameter, with the number of imaging fields of view in the Y direction per columnn y And the width of the actual overlapping area between adjacent imaging fields of view in the Y direction/each columnw overlap-y To optimize the parameters, a set of inequalities is established according to 1.1.
S4: obtaining the optimal focusing coordinates of all imaging visual fields in the current region to be scanned in the Y direction by taking the first inequality group as a constraint condition, and thus obtaining a first distribution region of each imaging visual field in the Y direction;
in this embodiment, as shown in fig. 4, the scan path is preferably planned in the Y direction/each column, and the imaging number of the imaging fields in the Y direction/each column can be calculated according to the formula 1.3n y And the width of the actual overlapping areaw overlap-y And determining therefrom the optimal focus coordinates of the respective imaging fields of view in the Y direction/on each column; at the same time, a two-dimensional distribution area of each imaging field of view in the Y direction/each column, specifically, a rectangular area in fig. 3, is obtained, the distribution area has the same width in the X direction, and each rectangular area has an overlapping area in the Y direction, and the width of the overlapping area in the Y direction is equal to that of the overlapping areaw overlap-y 。
S5: respectively extracting a minimum rectangular area completely overlapped with the wafer image in each first distribution area as a second distribution area;
in this embodiment, the scan path planning in the Y direction/each row is preferentially selected, and the minimum rectangular area completely overlapping with the wafer image is extracted from the rectangular first scan area obtained in the above step S4 to be the second distribution area, as shown in fig. 5, the rectangular area in fig. 5 is the second scan area, wherein the total area of the second scan area in the X direction/each row completely covers the waferThe width of the area is different in the X direction/each line, but the width of the overlapped area in the Y direction is equal to that of the overlapped area in the Y directionw overlap-y Then, the scanning is performed in the second divisional area in the X direction/line, so that the scanning range can be reduced in advance.
S6: establishing a corresponding second inequality group by taking the width of each second distribution region, the imaging visual field and the minimum overlapping region between the adjacent imaging visual fields in the X direction as constant parameters and taking the imaging quantity of the imaging visual fields in the X direction and the width of the actual overlapping region between the adjacent imaging visual fields as optimization parameters;
in this embodiment, a third optimization inequality is established according to the width of the actual overlapping region in the X direction being greater than or equal to the width of the minimum overlapping region; and establishing a fourth optimization inequality according to the condition that the sum of the widths of the non-overlapping areas in the imaging visual fields in the X direction is greater than or equal to the width of the current second distribution area.
Specifically, since the step S3 preferentially selects the planning of the scan path in the Y direction, the step S6 of the present embodiment uses the second distribution area in the X direction/width of each lineW x Imaging field of viewrectWidth in X direction/each column
W sub-x Width of minimum overlapping area between adjacent imaging visual fields in X direction/each lineW overlap-x For a known constant parameter, in the X-direction of the imaging field of view/number of images per linen x And the width of the actual overlapping area between adjacent imaging fields of view in the X direction/per linew overlap-x To optimize the parameters, a set of inequalities is established according to 1.1.
S7: and obtaining the optimal focusing positions of all the imaging visual fields in each second distribution area by taking the second inequality group as a constraint condition, and forming a scanning path according to the optimal focusing positions.
Respectively calculating to obtain each second distribution areaNumber of imaging fields of view in the medium X-direction per linen x And the width of the actual overlap region between adjacent imaging fields of viewW sub-x And thus the optimal focus coordinates in the X-direction/each row for the respective imaging field of view. The distribution of all imaging fields of view in the second distribution area can thus be ascertained, from which the scanning path is formed.
Example 2
The present embodiment provides another method for optimizing a wafer scan path, including:
s1: obtaining a wafer image to be scannedRegion 0 Determining a circumscribed rectangle of the outer contour edge of the wafer in the image in the horizontal directionRect 0 And the external rectangle is expanded outwards to obtain the area to be scanned of the waferRect 1 （W x ， W y ）；
In the present embodiment, the region to be scanned has a width in both the X direction and the Y directionW x ，W y The X direction and the Y direction can be set as two vertical directions on a two-dimensional horizontal plane of the wafer image; preferably, the X direction and the Y direction are respectively parallel to the length and the width of the area to be scanned; more preferably, since the region to be scanned is rectangular, and any end point of the rectangle can be used as an origin, the width of the region to be scanned in the X direction and the Y directionW x ，W y The length and width of the rectangle are the same as those of the area to be scanned.
Preferably, the outward expansion width of the circumscribed rectangle in the X direction is set to be 1/20-1/5 of the width of the imaging visual field in the X direction; the outward expansion width of the circumscribed rectangle in the Y direction is set to be 1/20-1/5 of the width of the imaging visual field in the Y direction.
S2: setting the width of the imaging visual field of the scanning device in the X direction and the Y direction; setting the width of the minimum overlapping area between adjacent imaging visual fields in the X direction and the Y direction;
in the present embodiment, imaging is determined according to the hardware condition of the scanning apparatusVisual fieldrectAnd the imaging field of view corresponds to the width in the X directionW sub-x And width in Y directionW sub-y (ii) a And setting the width of the minimum overlapping area in the X directionW overlap-x And width in the Y directionW overlap-y 。
S3: establishing a first inequality set by taking the width of the region to be scanned, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view in the X direction as constant parameters and taking the imaging quantity of the imaging field of view in the X direction and the width of the actual overlapping region between the adjacent imaging fields of view as optimized parameters;
in this embodiment, an inequality model may be established in the X direction, and a first optimization inequality is established according to the fact that the width of the actual overlapping region in the X direction is greater than or equal to the width of the minimum overlapping region; and establishing a second optimization inequality according to the condition that the sum of the widths of the non-overlapping regions in the imaging visual fields in the X direction is greater than or equal to the width of the current region to be scanned.
Specifically, the present embodiment preferentially selects the scan path planning in the X direction, so that the width of the region to be scanned in the X direction/each lineW x And imaging field of viewrectWidth in X direction/each rowW sub-x Width of minimum overlapping area between adjacent imaging visual fields in X direction/each lineW overlap-x Is a known constant parameter, in the number of images of the imaging field of view in the X direction per linen x And the width of the actual overlapping area between adjacent imaging fields of view in the X direction/per linew overlap-x To optimize the parameters, a set of inequalities is established according to 1.1.
S4: obtaining the optimal focusing coordinates of all imaging visual fields in the current region to be scanned in the X direction by taking the first inequality group as a constraint condition, and thus obtaining a first distribution region of each imaging visual field in the X direction;
in this embodiment, the scan path is preferentially selected to be planned in the X direction/each line, and the X direction can be calculated according to the formula 1.3Number of imaging views up/per linen x And the width of the actual overlapping areaw overlap-x And determining therefrom the optimal focus coordinates of the respective imaging field of view in the X-direction/row; at the same time, a two-dimensional distribution area of each imaging visual field in the X direction/each line is obtained, the distribution area is rectangular areas which are sequentially arranged along the X direction, so that the width of the distribution area in the Y direction is the same, and each rectangular area has an overlapping area in the X direction, and the width of the overlapping area in the X direction is equal to that of the overlapping areaw overlap-x 。
S5: respectively extracting a minimum rectangular area completely overlapped with the wafer image in each first distribution area as a second distribution area;
in this embodiment, the scan path is preferably planned in the X direction per row, and the smallest rectangular area completely overlapping with the wafer image is extracted from the rectangular first scan area obtained in the above step S4 to be the second distribution area, wherein the total area of the second scan areas in the Y direction per column completely covers the area where the wafer is located, and the widths of the second scan areas in the Y direction per column are different, but there still exists an overlapping area in the X direction in each second scan area, and the width of the overlapping area in the X direction is equal to that of the overlapping area in the X directionw overlap-x Then, the scanning is performed in the Y direction/each column in the second partition area, so that the scanning range can be reduced in advance.
S6: establishing a corresponding second inequality group by taking the width of each second distribution region, the imaging visual field and the minimum overlapping region between the adjacent imaging visual fields in the X direction as constant parameters and taking the imaging quantity of the imaging visual fields in the X direction and the width of the actual overlapping region between the adjacent imaging visual fields as optimization parameters;
in this embodiment, a third optimization inequality is established according to the width of the actual overlapping region in the X or Y direction being greater than or equal to the width of the minimum overlapping region; and establishing a fourth optimization inequality according to the condition that the sum of the widths of the non-overlapping areas in the imaging visual fields in the X or Y direction is greater than or equal to the width of the current second distribution area.
Specifically, since the scan path is preferentially planned in the X direction in step S3, the imaging field of view is set to the width Wy of the second distribution area in the Y direction/each column in this step S6rectWidth in Y direction/each column
W sub-y Width of minimum overlapping area between adjacent imaging visual fields in Y direction/each columnW overlap-y For a known constant parameter, in the Y direction of the imaging field of view/number of images per columnn y And the width of the actual overlapping area between adjacent imaging fields of view in the Y direction/each columnw overlap-y To optimize the parameters, a set of inequalities is established according to 1.1.
S7: and obtaining the optimal focusing positions of all the imaging visual fields in each second distribution area by taking the second inequality group as a constraint condition, and forming a scanning path according to the optimal focusing positions.
Respectively calculating the imaging number of imaging visual fields in the Y direction/each column in each second distribution regionn y And the width of the actual overlap region between adjacent imaging fields of viewW sub-y And thus the optimal focus coordinates in the Y direction/on each column for the respective imaging field of view. The distribution of all imaging fields of view in the second distribution area can thus be ascertained, from which the scanning path is formed.
The essence of the technical solutions of the embodiment 1 and the embodiment 2 is the same, in the embodiment 1, the scan path is planned in the Y direction by preferential selection, and in the embodiment 2, the scan path is planned in the X direction by preferential selection.
The present invention provides a wafer inspection method based on the foregoing embodiment 1 or embodiment 2, including:
s1': providing a wafer, and obtaining a local scanning image in a detection area corresponding to the surface of the wafer by applying the optimization method of the wafer scanning path described in the embodiment 1 or the embodiment 2;
s2': fusing and splicing the local scanning images to obtain a panoramic scanning image of the current detection area; and acquiring detection parameters of the surface of the wafer based on the panoramic scanning image.
Description of the experiments
A 4-inch wafer is provided, and scanning and shooting are performed by using a 25M camera (imaging field of view is 5120 pixels by 5120 pixels) and a 3X lens, wherein the width and the height of the whole wafer are about 80000 pixels respectively. We set the minimum overlap to beW overlap-x Is 140 pixels andW overlap-x 105 pixels. The results of the comparison we have obtained using the prior art are as follows:
table 1 test results obtained using the wafer scan path planning methods described in examples 1-2 and the prior art
| Example 1 | Example 2 | Prior Art | |
| Number of imaging fields of view (number) scanned | 654 | 630 | 780 |
| Width of actual overlap area in Y-direction/per column woverlap-Y (pixel) | 440 | 240-540 | 140 |
| Width of actual overlap area in X direction/each row woverlap-X (pixel) | 135-480 | 140-460 | 105 |
As can be seen from table 1 above, the scanned images formed by embodiments 1 to 3 are fewer, and the actual overlapping area is larger. Therefore, the optimization method of the wafer scanning path provided by the embodiments 1-2 is adopted to establish an inequality model by taking the scanning number and the actual overlapping area as parameters to be optimized according to the limit conditions of the area to be scanned, the scanning imaging field of view and the overlapping area as constant parameters; and performing integer solution on the inequality model to obtain the plan of the scanning path with the least number of scanned pictures and the largest overlapping area of two adjacent imaging fields under the same condition. The method does not need to make any hardware change, can effectively save the scanning time of the whole wafer, and reduces the processing quantity and the storage capacity of the imaging view images.
The present invention provides a system for optimizing a wafer scanning path based on the foregoing embodiments 1 and 2, where the system includes: the device comprises an acquisition module, a setting module, a first optimization module, a first calculation module, an extraction module, a second optimization module and a second calculation module; the acquisition module is used for acquiring an image of an area where a wafer to be scanned is located, determining a circumscribed rectangle of the outer contour edge of the wafer in the image in the horizontal direction, and expanding the circumscribed rectangle outwards to obtain the area to be scanned of the wafer; the setting module is used for setting the width of an imaging visual field of the scanning device in a first direction and a second direction; setting the width of the minimum overlapping area between adjacent imaging visual fields in the first direction and the second direction; the first optimization module is used for establishing a first inequality set by taking the width of the region to be scanned, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view in the first direction as constant parameters and taking the imaging quantity of the imaging field of view in the first direction and the width of the actual overlapping region between the adjacent imaging fields of view as optimization parameters; the first calculation module is used for obtaining the optimal focusing coordinates of all imaging visual fields in the current region to be scanned in the first direction by taking the first inequality group as a constraint condition, and thus obtaining a first distribution region of each imaging visual field in the first direction; the extraction module is used for respectively extracting the smallest rectangular area which is completely overlapped with the wafer image in each first distribution area as a second distribution area; the second optimization module is used for establishing a corresponding second inequality set by taking the width of each second distribution region, the imaging visual field and the minimum overlapping region between the adjacent imaging visual fields in the second direction as constant parameters and taking the imaging quantity of the imaging visual fields in the second direction and the width of the actual overlapping region between the adjacent imaging visual fields as optimization parameters; the second calculation module is used for obtaining the optimal focusing positions of all the imaging fields in each second distribution area by taking the second inequality group as a constraint condition, and forming a scanning path according to the optimal focusing positions.
The present invention provides an electronic device based on the foregoing embodiments 1 or 2, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the method according to embodiment 1.
It should be understood that any process or method descriptions of methods, structures, or steps described herein that are in a block diagram or otherwise may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps in the process, and that the scope of embodiments of the present invention includes additional implementations in which functions may be executed out of order from that shown or discussed, including in substantially the same way or in an opposite order depending on the functionality involved, as would be understood by those reasonably skilled in the art of embodiments of the present invention.
It should be understood that portions of the present invention may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the various steps or methods may be implemented in software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
It will be understood by those skilled in the art that all or part of the steps carried out in the method of implementing the above embodiments may be implemented by hardware related to instructions of a program, which may be stored in a computer readable storage medium, and the program, when executed, includes one or a combination of the steps of the method embodiments.
In addition, functional units in the embodiments of the present invention may be integrated into one processing module, or each unit may exist alone physically, or two or more units are integrated into one module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode. The integrated module, if implemented in the form of a software functional module and sold or used as a stand-alone product, may also be stored in a computer readable storage medium.
The storage medium mentioned above may be a read-only memory, a magnetic or optical disk, etc.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made in the above embodiments by those of ordinary skill in the art without departing from the principle and spirit of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. A method for optimizing a scan path of a wafer, comprising:
acquiring an image of an area where a wafer to be scanned is located, determining an external rectangle of the outer contour edge of the wafer in the image in the horizontal direction, and expanding the external rectangle outwards to obtain the area to be scanned of the wafer;
setting the width of an imaging visual field of a scanning device in a first direction and a second direction; setting the width of the minimum overlapping area between adjacent imaging visual fields in the first direction and the second direction;
taking the width of the region to be scanned, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view in the first direction as a constant parameter, taking the imaging number of the imaging field of view in the first direction and the width of the actual overlapping region between the adjacent imaging fields of view as an optimization parameter, and establishing a first inequality set, which comprises the following steps: establishing a first optimization inequality according to the fact that the width of the actual overlapping area in the first direction is larger than or equal to the width of the minimum overlapping area; establishing a second optimization inequality according to the condition that the sum of the widths of the non-overlapped regions in the imaging visual fields in the first direction is greater than or equal to the width of the region to be scanned;
obtaining the optimal focusing coordinates of all imaging visual fields in the current region to be scanned in the first direction by taking the first inequality group as a constraint condition, and thus obtaining a first distribution region of each imaging visual field in the first direction;
respectively extracting a minimum rectangular area completely overlapped with the wafer image in each first distribution area as a second distribution area;
establishing a corresponding second inequality set by taking the width of each second distribution region, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view in the second direction as a constant parameter and taking the imaging quantity of the imaging fields of view in the second direction and the width of the actual overlapping region between the adjacent imaging fields of view as optimization parameters, wherein the second inequality set comprises: establishing a third optimization inequality according to the fact that the width of the actual overlapping area in the second direction is larger than or equal to the width of the minimum overlapping area; establishing a fourth optimization inequality according to the condition that the sum of the widths of the non-overlapping areas in the imaging visual fields in the second direction is greater than or equal to the width of the current second distribution area;
and obtaining the optimal focusing positions of all the imaging fields in each second distribution area by taking the second inequality group as a constraint condition, and forming a scanning path according to the optimal focusing positions.
2. The method of claim 1, wherein the obtaining the optimal focus coordinates of all the imaging fields of view in the current region to be scanned in the first direction using the first set of inequalities as constraints comprises:
and calculating the imaging number of the imaging fields in the first direction and the width of an actual overlapping region between adjacent imaging fields, and determining the optimal focusing coordinate of each imaging field in the first direction.
3. The method as claimed in claim 1, wherein the obtaining the optimal focusing positions of all the imaging fields of view in each of the second distribution areas with the second inequality set as a constraint condition comprises:
and respectively calculating the imaging quantity of the imaging visual fields in the second direction in each second distribution area and the width of an actual overlapping area between adjacent imaging visual fields, and determining the optimal focusing coordinate of each imaging visual field in the second direction.
4. The method as claimed in claim 1, wherein the outward widening of the circumscribed rectangle in the first direction is set to 1/20-1/5 of the width of the imaging field of view in the first direction.
5. The method as claimed in claim 1, wherein the outward width of the circumscribed rectangle in the second direction is set to be 1/20-1/5 of the width of the imaging field of view in the second direction.
6. A system for optimizing a wafer scan path, the method of any one of claims 1 to 5 being applied, the system comprising: the device comprises an acquisition module, a setting module, a first optimization module, a first calculation module, an extraction module, a second optimization module and a second calculation module; the acquisition module is used for acquiring an image of an area where a wafer to be scanned is located, determining a circumscribed rectangle of the outer contour edge of the wafer in the image in the horizontal direction, and expanding the circumscribed rectangle outwards to obtain the area to be scanned of the wafer; the setting module is used for setting the width of an imaging visual field of the scanning device in a first direction and a second direction; setting the width of the minimum overlapping area between adjacent imaging visual fields in the first direction and the second direction; the first optimization module is used for establishing a first inequality set by taking the width of the region to be scanned, the imaging field of view and the minimum overlapping region between the adjacent imaging fields of view in the first direction as a constant parameter and taking the imaging number of the imaging field of view and the width of the actual overlapping region between the adjacent imaging fields of view in the first direction as optimization parameters, and the first inequality set comprises the following steps: establishing a first optimization inequality according to the fact that the width of the actual overlapping area in the first direction is larger than or equal to the width of the minimum overlapping area; establishing a second optimization inequality according to the condition that the sum of the widths of the non-overlapped regions in the imaging visual fields in the first direction is greater than or equal to the width of the region to be scanned; the first calculation module is used for obtaining the optimal focusing coordinates of all imaging visual fields in the current region to be scanned in the first direction by taking the first inequality group as a constraint condition, and thus obtaining a first distribution region of each imaging visual field in the first direction; the extraction module is used for respectively extracting the smallest rectangular area which is completely overlapped with the wafer image in each first distribution area as a second distribution area; the second optimization module is configured to use widths of the second distribution regions, the imaging fields of view, and the minimum overlapping regions between adjacent imaging fields of view in the second direction as constant parameters, and use the number of images of the imaging fields of view in the second direction and the width of the actual overlapping regions between adjacent imaging fields of view as optimization parameters to establish a corresponding second inequality set, including: establishing a third optimization inequality according to the fact that the width of the actual overlapping area in the second direction is larger than or equal to the width of the minimum overlapping area; establishing a fourth optimization inequality according to the condition that the sum of the widths of the non-overlapping areas in the imaging visual fields in the second direction is larger than or equal to the width of the current second distribution area; the second calculation module is used for obtaining the optimal focusing positions of all the imaging fields in each second distribution area by taking the second inequality group as a constraint condition, and forming a scanning path according to the optimal focusing positions.
7. An electronic device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the steps of the method according to any of claims 1 to 5 are implemented when the computer program is executed by the processor.
8. A method of wafer inspection, the method comprising:
providing a wafer, and acquiring a local scanning image in a corresponding detection area on the surface of the wafer by applying the optimization method of the wafer scanning path according to any one of claims 1 to 5;
fusing and splicing the local scanning images to obtain a panoramic scanning image of the current detection area; and acquiring detection parameters of the surface of the wafer based on the panoramic scanning image.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103307983A (en) * | 2012-03-09 | 2013-09-18 | 中芯国际集成电路制造(上海)有限公司 | Wafer edge exposure process detecting method |
| CN106568384A (en) * | 2017-01-17 | 2017-04-19 | 浙江大学台州研究院 | Size measurement method for large-chamfer quartz wafer |
| CN106898564A (en) * | 2015-12-18 | 2017-06-27 | 超科技公司 | Holocrystalline chip detection method with optional picture element density |
| CN114220757A (en) * | 2022-02-22 | 2022-03-22 | 武汉精立电子技术有限公司 | Wafer detection alignment method, device and system and computer medium |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6974653B2 (en) * | 2002-04-19 | 2005-12-13 | Nikon Precision Inc. | Methods for critical dimension and focus mapping using critical dimension test marks |
| JP5765345B2 (en) * | 2010-10-26 | 2015-08-19 | 株式会社ニコン | Inspection apparatus, inspection method, exposure method, and semiconductor device manufacturing method |
-
2022
- 2022-05-09 CN CN202210497777.8A patent/CN114594664B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103307983A (en) * | 2012-03-09 | 2013-09-18 | 中芯国际集成电路制造(上海)有限公司 | Wafer edge exposure process detecting method |
| CN106898564A (en) * | 2015-12-18 | 2017-06-27 | 超科技公司 | Holocrystalline chip detection method with optional picture element density |
| CN106568384A (en) * | 2017-01-17 | 2017-04-19 | 浙江大学台州研究院 | Size measurement method for large-chamfer quartz wafer |
| CN114220757A (en) * | 2022-02-22 | 2022-03-22 | 武汉精立电子技术有限公司 | Wafer detection alignment method, device and system and computer medium |
Non-Patent Citations (1)
| Title |
|---|
| 基于明暗场成像的多扫描方式图案化晶圆检测技术研究;陈世炜;《中国优秀硕士学位论文全文数据库》;20210915;全文 * |
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