CN114591133A - High-quality acenaphthylene - Google Patents

High-quality acenaphthylene Download PDF

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CN114591133A
CN114591133A CN202011426163.8A CN202011426163A CN114591133A CN 114591133 A CN114591133 A CN 114591133A CN 202011426163 A CN202011426163 A CN 202011426163A CN 114591133 A CN114591133 A CN 114591133A
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acenaphthylene
resin
polyacenaphthylene
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oxygen
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徐英黔
胡君一
胡煦格
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Anshan Little Giant Biotechnology Co ltd
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    • C07C13/28Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof
    • C07C13/32Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings
    • C07C13/54Polycyclic hydrocarbons or acyclic hydrocarbon derivatives thereof with condensed rings with three condensed rings
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Abstract

The invention relates to high-quality acenaphthylene, which is applied to the field of electronic chemistry, in particular to the field of semiconductor materials. The acenaphthylene provided by the invention does not contain or basically does not contain oxygen-containing compound impurities, and the polyacenaphthylene resin prepared by using the acenaphthylene resin can obtain excellent electrical characteristics, such as the advantage of low relative permittivity.

Description

High-quality acenaphthylene
Technical Field
The invention relates to the field of electronic chemicals, in particular to an insulating material used in the field of semiconductor materials. Specifically, the invention relates to high-quality acenaphthylene, and particularly relates to acenaphthylene applied to the field of electronic chemical products.
Background
Acenaphthylene, also known as dihydroacenaphthylene, the english name Acenaphthylene, CAS number: 208-96-8, the structural formula is as follows:
Figure BSA0000227058730000011
the acenaphthylene can be used for manufacturing polyacenaphthylene resin, and then used for manufacturing electric insulating materials, ion exchange resins and the like, and can also be directly applied to the field of semiconductor materials. Acenaphthylene can also be used as an organic synthetic raw material to produce 1, 8-naphthalic anhydride, nitro acenaphthylene, acenaphthoquinone and the like for preparing dyes, such as vaseline scarlet and fluorescent whitening agents. The acenaphthylene can also be used for preparing pesticides such as plant growth hormone, insecticides and bactericides.
The following methods are known for the preparation of acenaphthylene:
one is the synthesis of acenaphthylene by acenaphthylene gas-phase oxidation. In a paper "Acenaphthylene" from "j.appl.chem" 1951: the preparation of acenaphthylene and the preparation of acenaphthylene Polymers and Copolymers of acenaphthylene are reported in Its Polymers and Copolymers and in the Patent of Polymers and Copolymers of acenaphthylene (United States Patent: 2445181);
in "the second order journal: nature science, in the 01 th 1959, jiaoyunwei 20736published a paper that catalytic dehydrogenation of coal tar to a combined utilization of ii, acenaphthene describes three catalysts: i, two vanadium pentoxide deposits on pumice, II, zinc oxide, the oxidation magnesium, the oxidation calcium, the mixture of sulfuric acid potassium, chromium acid , the mixture of chromium, III, the mixture of manganese dioxide and alumina. The dehydrogenation of acenaphthene with air as oxidant does not allow obtaining an effect which can be weight-reduced, wherein catalyst I is not suitable for use as a dehydrogenation catalyst. With catalysts II and III, respectively carrying out gas-phase catalytic dehydrogenation of acenaphthene under the condition that water vapor is a dilute agent, the reduction of weight is achieved. In the two catalysts, the JI of the catalyst III is better than a minimum, the optimum reaction temperature is 600 ℃, the yield of the dehydro-products is 90 percent, and the content of acenaphthylene in the catalyst is 96 percent measured by a photoelectric colorimetry.
A method for preparing acenaphthylene is described in a paper published in 1972 of Liaoning chemical industry, namely test success for preparing acenaphthylene by using acenaphthylene, wherein acenaphthylene is gasified and passes through a catalyst under the condition of high temperature, and the catalyst is catalyzed and dehydrogenated to generate the acenaphthylene under the conditions of air and steam respectively; in addition, patent "a method for preparing acenaphthylene and a reaction device thereof" (application number: CN200910054846.2) also reports a method for producing acenaphthylene by gasifying acenaphthylene, passing it through a catalyst, and performing catalytic dehydrogenation in a carbon dioxide atmosphere.
The other is a process for preparing acenaphthylene by rectification extraction. In the invention patent of 'device and method for extracting acenaphthene and acenaphthylene in LCO bicyclic aromatic hydrocarbon' (patent number: CN201811485681.X) published by Gui, Cao Xiao Yan and Ling hong Yu of Nanjing university in 2018, a process for preparing acenaphthylene by rectification extraction method is reported.
The third method is acenaphthene bromination and elimination dehydrogenation. In 1999, a paper "research on dehydrogenation reaction of methylene-containing aromatic hydrocarbons" published by Jiang Ju university in mining industry reported dehydrogenation reactions of various methylene-containing aromatic hydrocarbons in the presence of N-bromosuccinimide (NBS). The method can prepare acenaphthylene by acenaphthylene dehydrogenation.
And the fourth method is a method of bromoaddition and elimination of acenaphthylene. In 2005, taitian koucao and bambusa domestica, new york corporation, patent "method for producing polycyclic aromatic vinyl compound" (patent No. CN200510008106.7) described that a polycyclic aromatic vinyl compound of high purity was produced by adding an addition agent such as halogen, hydrogen halide, and water to a vinyl group of a polycyclic aromatic vinyl compound such as divinylnaphthalene, divinylbiphenyl, or acenaphthylene to give a corresponding polycyclic aromatic vinyl compound derivative, separating and purifying the polycyclic aromatic vinyl compound derivative by recrystallization, adsorption, or chemical reaction, and removing the addition agent added to the polycyclic aromatic vinyl compound derivative.
Researches show that the electrical property indexes of the acenaphthylene and the polyacenaphthylene resin prepared by the method are not ideal when the acenaphthylene and the polyacenaphthylene resin are applied to the field of semiconductors, for example, the prepared polyacenaphthylene resin has high relative permittivity and large dielectric loss, and the application of the polyacenaphthylene resin is influenced. Therefore, there is a need to provide a technical solution to improve the electrical characteristics of the final product to meet the application requirements of the final product in electronic chemical products.
Disclosure of Invention
In order to meet the raw material demand of acenaphthylene in the electronic chemical industry, various methods are attempted to improve the product characteristics, such as adding related additives to acenaphthylene or polyacenaphthylene resin, improving the acenaphthylene polymerization method, and the like. However, the above method is either complicated or the effect is not ideal enough, and thus the method cannot have practical application value in the aspect of industrialization.
The inventor finds out through research that the main reason influencing the electrical characteristics of the product is that the known preparation methods generally generate oxygen-containing impurities in the production process, and the specific impurities are different from other impurities and have significant adverse effects on the electrical characteristics of the product. Thus, the effective removal of the oxygen-containing compound impurities may improve the electrical properties of the polyacenaphthylene resin product or further semiconductor material. Then, the invention provides a high-quality acenaphthylene product, namely an acenaphthylene product containing no or basically no oxygen-containing compound, so that an excellent technical effect is obtained, the use requirement of the high-quality polyacenaphthylene resin is met, and the blank of the product is filled.
The acenaphthylene has the following structure:
Figure BSA0000227058730000021
there is essentially no requirement in the literature for the impurity content of the acenaphthylene product used, which may contain many different types and amounts of impurities, such as acenaphthylene, biphenyl, dibenzofuran, acenaphthenone, and the like. If not subjected to a particular purification process, it generally contains oxygen-containing compound impurities such as acenaphthenone, dibenzofuran, and the like. The oxygen-containing compound impurities have two main sources, one is introduced from the raw material for preparing acenaphthylene, namely the purity of the raw material is not high, and the raw material contains various oxygen-containing impurities; the other is a by-product in the process of producing acenaphthylene, which may be in a major form such as acenaphthenone, dibenzofuran, etc. The term oxygenate as well as oxygenate impurities, oxygenated impurities or the like in the present invention refers to compounds containing oxygen atoms in the various structures present in the acenaphthylene product.
The polyacenaphthylene resin prepared from acenaphthylene containing oxygen-containing compound impurities has high polarity, high water absorption and other adverse effects, and the reason why the product containing oxygen-containing compounds does not have excellent electrical characteristics may not be determined at present, however, the inventor believes that the defects of the polyacenaphthylene resin may cause high relative permittivity and large dielectric loss, and influence the application of the polyacenaphthylene resin, and the inventor determines through experiments that the acenaphthylene product containing no oxygen-containing compound impurities is the basis for obtaining high-quality polyacenaphthylene resin with excellent electrical characteristics.
By "free or substantially free of oxygenate impurities" herein is meant that the weight percent of the oxygenate is controlled in the range of 0 to 0.1 percent based on the total weight of the product based on the elemental oxygen content of the oxygenate.
The content is determined by various content measuring methods known in the art, such as elemental analysis, gas chromatography, liquid chromatography including high performance liquid chromatography, mass spectrometry, gas chromatography-mass spectrometry, liquid chromatography-mass spectrometry, and the like. Wherein an oxygenate content of 0 represents that the oxygen content in the sample does not reach the limit of detection when said content is determined by one of the known methods described above, or is determined by calculation to not reach the limit of detection. For example, elemental analysis can be used to determine the feed, product, and impurity levels described herein, wherein carbon and hydrogen can be determined by measured or calculated values, oxygen by calculated values, and elemental analysis by% results.
The core of the present application is to remove the oxygen-containing compound impurities as much as possible in the acenaphthylene product, while making no special requirements for other impurities, since this can significantly improve the electrical properties of the polyacenaphthylene resin and subsequent products.
Detailed Description
The raw materials and reagents used in the examples of the invention were as follows:
Figure BSA0000227058730000031
example 1
1. The raw material acenaphthylene (95%, shihei chemical industry development limited) was analyzed using an elemental analyzer, and the measured value: c94.52, H5.31 (Calculations: C94.53, H5.33, O0.14), where O is represented by a calc because it cannot be directly determined. Adding acenaphthylene (10.2g, 95%, echiei (shanghai) chemical industry development limited) into n-hexane (100mL), heating to 50 ℃, stirring for 10min to completely dissolve the acenaphthylene, adding 50% calcium chloride aqueous solution (50mL multiplied by 3), separating an organic layer by a separating funnel, adding 10% sodium hydroxide aqueous solution (50mL multiplied by 3) into the organic layer, separating an organic layer by the separating funnel, adding deionized water (50mL multiplied by 3) into the organic layer, separating the organic layer by the separating funnel, drying, distilling and concentrating the organic layer by anhydrous magnesium sulfate to (20mL), transferring to a refrigerator at-15 ℃, freezing and crystallizing for 12h, filtering to obtain 7.2g of crystallized acenaphthylene, wherein the yield is 70.6%, and the purity is 98.1%;
2. the product was analyzed using an elemental analyzer, with the measurements: c94.61, H5.33 (calculated: C94.68, H5.32, oxygen content 0);
3. in a 20mL reactor, the acenaphthylene (6.2g) containing no oxygen-containing compound impurities was added, stirred and heated to 110 ℃, and then 2, 2-azobisisobutyronitrile (59mg) was added, stirred and reacted for 1.5h, to obtain polyacenaphthylene resin 1.
4. The polyacenaphthylene resin 1 is prepared into a sheet of 10cm multiplied by 1cm, and the relative permittivity epsilon of the polyacenaphthylene resin 1 is measured at 10GHz according to a recommended method GB/T1409-2006 for measuring the permittivity and the dielectric loss factor of the electric insulating material under power frequency, audio frequency and high frequency (including the wavelength of a meter wave)r=2.64。
Example 2
1. The raw material acenaphthylene (90%, shanghai alatin biochemistry science and technology, ltd.) was analyzed using an elemental analyzer, and the measured value: c94.28, H5.35 (calculated: C94.29, H5.37, O0.34). Adding acenaphthylene (10.4g, 90%, Shanghai Aladdin Biotechnology, Ltd.) into n-hexane (100mL), stirring and heating to 50 ℃, stirring for 10min, completely dissolving acenaphthylene, adding 50% calcium chloride aqueous solution (50mL multiplied by 3), separating an organic layer by a separating funnel, adding 10% sodium hydroxide aqueous solution (50mL multiplied by 3) into the organic layer, separating an organic layer by the separating funnel, adding deionized water (50mL multiplied by 3) into the organic layer, separating the organic layer by the separating funnel, drying the organic layer by anhydrous magnesium sulfate, distilling and concentrating to 20mL, transferring to a refrigerator at-15 ℃, freezing and crystallizing for 12h, and filtering to obtain 6.8g of crystallized acenaphthylene, wherein the yield is 66.1%, and the purity is 95.5%;
2. the product was analyzed using an elemental analyzer, with the measurements: c94.64, H5.33 (calculated: C94.65, H5.35, oxygen content 0);
3. in a 20mL reactor, the acenaphthylene (6.1g) containing no oxygen-containing compound impurities was added, heated to 110 ℃, and then 2, 2-azobisisobutyronitrile (60mg) was added, and stirred to react for 1.5h, to obtain polyacenaphthylene resin 2.
The polyacenaphthylene resin 2 is prepared into a sheet of 10cm multiplied by 1cm, and the relative permittivity epsilon of the polyacenaphthylene resin 2 is measured at 10GHz according to a recommended method GB/T1409-2006 for measuring the permittivity and the dielectric loss factor of the electric insulating material under power frequency, audio frequency and high frequency (including the wavelength of a meter wave)r=2.70。
Comparative example 1
1. The raw material acenaphthylene (95%, shihei chemical industry development limited) was analyzed using an elemental analyzer, and the measured value: c94.52, H5.31 (calculated: C94.53, H5.33, O0.14);
2. in a 20mL reactor, acenaphthylene (6.1g, 95%, Chishiea chemical industry development Co., Ltd.) was added, stirred and heated to 110 ℃, and then 2, 2-azobisisobutyronitrile (60mg) was added, stirred and reacted for 1.5 hours, to obtain polyacenaphthylene resin 3.
3. The polyacenaphthylene resin 3 is prepared into a sheet of 10cm multiplied by 1cm, and the relative permittivity epsilon of the polyacenaphthylene resin 3 is measured at 10GHz according to a recommended method GB/T1409-2006 for measuring the permittivity and the dielectric loss factor of the electric insulating material under power frequency, audio frequency and high frequency (including the wavelength of a meter wave)r=3.06。
Comparative example 2
1. The raw material acenaphthylene (90%, shanghai alatin biochemistry science and technology, ltd.) was analyzed using an elemental analyzer, and the measured value: c94.28, H5.35 (calculated: C94.29, H5.37, O0.34);
2. in a 20mL reactor, acenaphthylene (6.0g, 90%, Shanghai Alatin Biotech Co., Ltd.) was added, stirred and heated to 110 ℃, and 2, 2-azobisisobutyronitrile (59mg) was added, stirred and reacted for 1.5 hours, to obtain polyacenaphthylene resin 4.
3. The polyacenaphthylene resin 4 is prepared into a sheet of 10cm multiplied by 1cm, and the relative permittivity epsilon of the polyacenaphthylene resin 4 is measured at 10GHz according to a recommended method GB/T1409-2006 for measuring the permittivity and the dielectric loss factor of the electric insulating material under power frequency, audio frequency and high frequency (including the wavelength of a meter wave)r=3.09。
Comparative example 3
1. The raw material acenaphthylene (95%, shihei chemical industry development limited) was analyzed using an elemental analyzer, and the measured value: c94.52, H5.31 (calculated: C94.53, H5.33, O0.14);
2. the raw material acenaphthylene (95%, echiei (shanghai) chemical industry development limited) is purified and prepared by using a simulated moving bed preparation chromatographic system, the purity of the obtained acenaphthylene is 98.9%, the content of impurities is 1.0%, the content of impurities is 0.1%, and the measured value is as follows: c94.58, H5.28 (calculated: C94.60, H5.29, O0.11);
3. in a 20mL reactor, acenaphthylene prepared as described above (6.2g, 99.7%) was added, stirred and heated to 110 deg.C, and 2, 2-azobisisobutyronitrile (59mg) was added, stirred and reacted for 1.5h to obtain polyacenaphthylene resin 5.
4. The polyacenaphthylene resin 5 is prepared into a sheet of 10cm multiplied by 1cm, and the relative permittivity epsilon of the polyacenaphthylene resin 5 is measured at 10GHz according to a recommended method GB/T1409-2006 for measuring the permittivity and the dielectric loss factor of the electric insulating material under power frequency, audio frequency and high frequency (including the wavelength of a meter wave)r=3.08。
Comparative example 4
1. The raw material acenaphthylene (95%, shihei chemical industry development limited) was analyzed using an elemental analyzer, and the measured value: c94.52, H5.31 (calculated: C94.53, H5.33, O0.14);
2. adding acenaphthylene (10.4g, 95%, echiei (shanghai) chemical industry development limited) into n-hexane (100mL), heating to 50 ℃, stirring for 10min to completely dissolve the acenaphthylene, adding 50% calcium chloride aqueous solution (50mL multiplied by 3), separating an organic layer by a separating funnel, adding 10% sodium hydroxide aqueous solution (50mL multiplied by 3) into the organic layer, separating an organic layer by the separating funnel, adding deionized water (50mL multiplied by 3) into the organic layer, separating the organic layer by the separating funnel, drying, distilling and concentrating the organic layer by anhydrous magnesium sulfate to (20mL), transferring to a refrigerator at-15 ℃, freezing and crystallizing for 12h, and filtering to obtain 6.9g of crystallized acenaphthylene, wherein the yield is 66.3% and the purity is 99.1%;
3. in a 20mL reactor, the acenaphthylene prepared above (5.6g, 99.1%) and dibenzofuran (0.6g, 98%, Shanghai Alatin Biotech Co., Ltd.) were added, stirred and heated to 110 deg.C, and a sample was taken for elemental analysis (measured value: C93.77, H5.27 (calculated value: C93.81, H5.26, O0.93), acenaphthylene content was 89.5%), 2-azobisisobutyronitrile (60mg) was added, and stirred and reacted for 1.5H to obtain polyacenaphthylene resin 6.
4. The polyacenaphthylene resin 6 is prepared into a sheet of 10cm multiplied by 1cm, and the relative permittivity epsilon of the polyacenaphthylene resin 6 is measured at 10GHz according to a recommended method GB/T1409-2006 for measuring the permittivity and the dielectric loss factor of the electric insulating material under power frequency, audio frequency and high frequency (including the wavelength of a meter wave)r=3.17。
Table 1: summary of the specific embodiments
Figure BSA0000227058730000061
Figure BSA0000227058730000071
Through the embodiment of the invention and the proportion, the following can be found:
1. the lower the oxygen content in the acenaphthylene is, the lower the relative permittivity of the prepared polyacenaphthylene resin is, and the polyacenaphthylene resin prepared from acenaphthylene which does not contain oxygen-containing compound impurities has very excellent electronic properties such as relative permittivity and the like;
2. other impurities are removed from the acenaphthylene, for example, the acenaphthylene impurity is reduced to a lower level (0.1%, but still contains oxygenate impurities), and the electronic properties of the prepared polyacenaphthylene resin are not improved; indicating that the content of other impurities is insensitive to the electronic performance of the product of the polyacenaphthylene resin.
3. When the acenaphthylene contains impurities such as dibenzofuran (9.5%, oxygen-containing compound impurities), the electronic performance of the prepared polyacenaphthylene resin is obviously reduced. Therefore, the polyacenaphthylene resin prepared by the oxygen-containing compound impurities in the acenaphthylene has obvious influence on the electronic performance.
On this basis, the patent relates to acenaphthylene products characterized by a low content of oxygen compounds, e.g. 0.1-0 as shown by elemental analysis or other known content determination methods; alternatively 0.1 to 0.001; or 0.05-0.001. The oxygen element compound content of 0 in the present patent refers to a state not detected by the detection device or a case where a trace amount of oxygen is contained, and an absolute content of 0 is not required. Based on this understanding, the elemental oxygen compound content of this patent may also be defined as less than 0.1 to greater than 0.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention. Moreover, the present invention includes the combination of the technical features of the above embodiments in addition to the above embodiments, because after reading the present invention, those skilled in the art can directly and unambiguously determine that the technical features mentioned in the present invention can still solve the related technical problems after being properly combined.

Claims (9)

1. An acenaphthylene product comprising no or substantially no oxygenates, wherein the weight percent of said oxygenates is controlled within the range of 0-0.1% by weight of the total weight of the product based on the oxygen content of the oxygenates.
2. An acenaphthylene product according to claim 1 wherein the oxygen content of the oxygen-containing compound is less than 0.1% to greater than 0% by weight of the total product.
3. The acenaphthylene product of claim 1 wherein the oxygenate content is 0.05% to 0.001%.
4. The acenaphthylene product of claim 1, wherein the oxygen-containing compound content is 0, i.e., no trace oxygen is detected or contains no more than the detection limit.
5. An acenaphthylene product according to claims 1-4 wherein said content is determined by elemental analysis, liquid chromatography, gas chromatography, mass spectrometry or a combination thereof.
6. An acenaphthylene product of claim 1 wherein the relative permittivity of the polyacenaphthylene resin produced using the acenaphthylene is less than 2.80.
7. An acenaphthylene product of claim 6 wherein the relative permittivity of the polyacenaphthylene resin produced using said acenaphthylene is less than 2.70.
8. Use of acenaphthylene in the preparation of a polyacenaphthylene resin having a low relative permittivity, wherein the acenaphthylene is according to any of claims 1-5, the acenaphthylene resin having a relative permittivity of less than 2.80.
9. Use of acenaphthylene in a semiconductor material, wherein said acenaphthylene is as described in any of claims 1-5, first made into an acenaphthylene resin, and then used to prepare a semiconductor material; and the acenaphthylene is directly used for preparing semiconductor materials.
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Citations (3)

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