CN114589419B - Wafer cutting method and laser cutting device - Google Patents
Wafer cutting method and laser cutting device Download PDFInfo
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- CN114589419B CN114589419B CN202210489798.5A CN202210489798A CN114589419B CN 114589419 B CN114589419 B CN 114589419B CN 202210489798 A CN202210489798 A CN 202210489798A CN 114589419 B CN114589419 B CN 114589419B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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Abstract
The embodiment of the disclosure discloses a wafer cutting method and a laser cutting device. The cutting method comprises the following steps: providing a wafer to be cut; the wafer to be cut comprises a plurality of dies and a cutting channel positioned between two adjacent dies; the cutting channel comprises at least two sub-areas which are arranged in parallel along the extending direction of the cutting channel; the material thickness distribution in the at least two sub-areas is different; applying a first laser energy to a first one of the sub-regions to cut the first one of the sub-regions; wherein the first laser energy is determined from first statistical information of material thickness distribution in a first one of the sub-regions; applying a second laser energy to a second one of said sub-regions to cut the second one of said sub-regions; and determining the second laser energy according to second statistical information of material thickness distribution in a second sub-area, wherein the second laser energy is different from the first laser energy.
Description
Technical Field
The embodiment of the disclosure relates to but not limited to the field of semiconductor manufacturing, in particular to a wafer cutting method and a laser cutting device.
Background
As the feature size of memory devices shrinks and the interconnect density increases, the memory devices move in three dimensions. Wherein, the hybrid bonding technology can realize three-dimensional integration of two different functional chips (also called dies). For example, a memory array chip is hybrid bonded with a peripheral circuit chip, and a three-dimensional memory with a smaller size, higher interconnection density, and lower power consumption can be realized.
Before hybrid bonding, a plurality of chips on a wafer are cut into individual chips. However, the flatness and cleanliness of the cut chip surface are poor, and it is difficult to meet the process requirements of subsequent processing (e.g., hybrid bonding). Therefore, how to improve the flatness and cleanliness of the surface of the cut chip to meet the process requirements of subsequent processing becomes a technical problem to be solved urgently.
Disclosure of Invention
According to a first aspect of the embodiments of the present disclosure, there is provided a method for cutting a wafer, including:
providing a wafer to be cut; the wafer to be cut comprises a plurality of dies and a cutting channel positioned between two adjacent dies; the cutting channel comprises at least two sub-areas which are arranged in parallel along the extending direction of the cutting channel; the material thickness distribution in the at least two sub-areas is different;
applying a first laser energy to a first one of the sub-regions to cut the first one of the sub-regions; wherein the first laser energy is determined from first statistical information of material thickness distribution in a first one of the sub-regions;
applying a second laser energy to a second one of said sub-regions to cut the second one of said sub-regions; and determining the second laser energy according to second statistical information of material thickness distribution in a second sub-area, wherein the second laser energy is different from the first laser energy.
In some embodiments, prior to applying the first laser energy to a first one of the sub-regions, the cutting method further comprises:
acquiring the first statistical information; determining the first laser energy according to the first statistical information;
prior to applying the second laser energy to a second one of the sub-regions, the cutting method further comprises:
acquiring the second statistical information; and determining the second laser energy according to the second statistical information.
In some embodiments, said determining said first laser energy from said first statistical information comprises:
determining the first laser energy according to the type of the material and the thickness of each material in the first sub-area;
the determining the second laser energy according to the second statistical information includes:
determining the second laser energy according to the type of the material and the thickness of each material in the second sub-area; wherein at least one different material is present in a first of said sub-regions and in a second of said sub-regions; and/or the thickness of at least one same material in the first sub-area and the second sub-area is different.
In some embodiments, prior to applying the first laser energy to a first one of the sub-regions and applying the second laser energy to a second one of the sub-regions, the dicing method further comprises:
obtaining design information of the wafer to be cut, and determining the first statistical information and the second statistical information according to the design information; the design information comprises layout design information of the wafer to be cut and process size design information of the wafer to be cut;
alternatively, the first and second electrodes may be,
obtaining a detection result of the wafer to be cut, and determining the first statistical information and the second statistical information according to the detection result; and the detection result comprises a material distribution detection result of the wafer to be cut and a thickness detection result of the material.
In some embodiments, said applying a first laser energy to a first one of said sub-regions comprises:
under the condition of preset power, ablating a first sub-area for a first time length; wherein the preset power range comprises 1 watt to 50 watts;
said applying a second laser energy to a second one of said sub-regions comprises:
ablating a second one of the sub-regions for a second duration under the preset power condition; wherein the second duration is different from the first duration.
In some embodiments, said applying a first laser energy to a first one of said sub-regions comprises:
under the condition of first power, ablating a first sub-area at a preset scanning speed; wherein the preset scanning speed range comprises 10mm/s to 1000 mm/s;
said applying a second laser energy to a second one of said sub-regions comprises:
under the condition of second power, ablating a second sub-area at the preset scanning speed; wherein the second power is different from the first power.
In some embodiments, said applying a first laser energy to a first one of said sub-regions comprises:
projecting a first laser beam onto a first one of said sub-areas;
said applying a second laser energy to a second one of said sub-regions comprises:
projecting a second laser beam onto a second one of said sub-areas; wherein a spot size of the second laser beam is different from a spot size of the first laser beam.
In some embodiments, the cutting street comprises: various materials; prior to applying the first laser energy to a first one of the sub-areas and applying the second laser energy to a second one of the sub-areas, the dicing method further comprises:
establishing a database; wherein the database comprises laser energy required to ablate per unit thickness of each material;
determining the first laser energy according to the first statistical information and the database;
and determining the second laser energy according to the second statistical information and the database.
According to a second aspect of the embodiments of the present disclosure, there is provided a laser cutting device including:
the bearing component is used for bearing the wafer to be cut; the wafer to be cut comprises a plurality of dies and a cutting channel positioned between two adjacent dies; the cutting channel comprises at least two sub-regions which are arranged in parallel along the extending direction of the cutting channel; the material thickness distribution in the at least two sub-areas is different;
the cutting assembly is connected with the bearing assembly and used for applying first laser energy to a first sub-area so as to cut the first sub-area; wherein the first laser energy is determined from first statistical information of material thickness distribution in a first one of the sub-regions;
the cutting assembly is further used for applying second laser energy to a second one of the sub-regions to cut the second one of the sub-regions; and determining the second laser energy according to second statistical information of material thickness distribution in a second sub-area, wherein the second laser energy is different from the first laser energy.
In some embodiments, the cutting street comprises: various materials; the cutting device further comprises:
the storage component is respectively connected with the bearing component and the cutting component and at least used for storing the first statistical information and the second statistical information;
the storage component is also used for storing a database of laser energy required by each material with unit thickness to be ablated.
In the embodiment of the disclosure, by applying the first laser energy to the first sub-area of the cutting street, the first sub-area of the cutting street can be accurately cut because the first laser energy is determined according to the first statistical information of the material thickness distribution in the first sub-area; by applying the second laser energy to the second sub-area of the cutting street, the second laser energy is determined according to the second statistical information of the material thickness distribution in the second sub-area, so that the second sub-area of the cutting street can be accurately cut, the accurate cutting of different areas of the cutting street is realized, the thickness difference after the cutting of different areas is reduced, and the improvement of the flatness of the surface of the tube core after the cutting is facilitated. And the residual slag quantity after cutting in different areas can be reduced, the cleanliness of the surface of the tube core after cutting can be improved, and the process requirement of subsequent processing can be further met.
When the tube core with better flatness and cleanliness is adopted to execute the hybrid bonding, the difficulty of the hybrid bonding process is favorably reduced, and the efficiency and the bonding precision of the hybrid bonding process are improved.
Drawings
FIG. 1 is a schematic diagram illustrating a wafer structure according to an exemplary embodiment;
FIG. 2 is a partial electron microscopy test pattern for a wafer in accordance with an exemplary embodiment;
FIG. 3 is a flow chart illustrating a method of dicing a wafer according to an embodiment of the present disclosure;
FIG. 4 is a top view of a wafer shown in accordance with an embodiment of the present disclosure;
FIG. 5 is a cross-sectional view of a wafer shown in accordance with an embodiment of the present disclosure;
FIG. 6 is a graph illustrating statistical data of material thickness distribution in different regions of a scribe line of a wafer according to an embodiment of the present disclosure;
fig. 7 is a graph illustrating statistics of laser energy required for different areas within scribe lines of a wafer according to an embodiment of the present disclosure.
Detailed Description
The technical solutions of the present disclosure will be further explained in detail with reference to the drawings and examples. While exemplary implementations of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The present disclosure is more particularly described in the following paragraphs with reference to the accompanying drawings by way of example. Advantages and features of the present disclosure will become apparent from the following description and claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, and are provided solely for the purpose of facilitating and distinctly claiming the embodiments of the present disclosure.
In the embodiments of the present disclosure, the terms "first", "second", and the like are used for distinguishing similar objects, and are not necessarily used for describing a particular order or sequence.
The technical means described in the embodiments of the present disclosure may be arbitrarily combined without conflict.
Hybrid bonding processes may be distinguished by bonding objects, including Wafer to Wafer (W2W) bonding, Chip to Wafer (C2W) bonding, and Chip to Chip (C2C) bonding.
Compared with the bonding technology of advanced packaging, the chip-to-wafer bonding can achieve smaller pitch (pitch), for example, less than 10 μm, due to the advantage of bump-less (bump), thereby achieving higher density of interconnection (Input/Output, I/O). And no underfill (underfill) is used, so that the heat dissipation performance of the bonded device is better.
However, in the chip-to-wafer bonding process, higher requirements are placed on the flatness and cleanliness of the chip surface. The flatness and cleanliness of the chip surface are related to the processing before hybrid bonding, such as wafer cutting, chip picking and placing, chip cleaning, chip bonding, and the like.
Currently, mainstream wafer cutting methods include knife wheel cutting, laser cutting and plasma cutting. Wherein, only the cutting and slotting process of laser cutting of the Low dielectric constant (Low-K) dielectric layer suitable for the surface of the wafer is adopted. Due to different absorption rates of different materials on the wafer scribe line to the laser, for the Low-K dielectric layer formed with the circuit pattern, a difference in the cutting depth in the laser traveling direction may be caused, that is, a Total Thickness Variation (TTV) of the wafer after laser cutting exists.
As shown in fig. 1, the wafer 10 includes a plurality of dies 11 and scribe lines 12 between two adjacent dies 11. Before the uncut wafer 10, a plurality of Test structures (Test keys) are present on the scribe lines 12, for example, Test structures made of various metals, which are arranged in parallel in the scribe line extending direction (i.e., the laser traveling direction).
The existence of the test structure enables the proportion of different materials to be continuously changed in the laser advancing direction. If the constant laser energy is used for cutting the groove, on one hand, the areas which are easy to be grooved are ablated by the laser more, and the areas which are difficult to be grooved are ablated by the laser less, that is, the thicknesses of different areas after the groove is grooved by the laser are different, so that the flatness of the surface of the die 11 after cutting is poor (as shown in fig. 2).
On the other hand, because the ablation degrees of the laser to different areas are different, the residual quantity of the slag in the areas which are easy to be grooved is less, and the residual quantity of the slag in the areas which are difficult to be grooved is more, namely, the residual quantities of the slag in the different areas after the laser grooving are different, so that the cleanliness of the surface of the cut tube core 11 is poor, and the tube core 11 with poor flatness and cleanliness is difficult to meet the process requirements of subsequent processing.
In view of the above, the present disclosure provides a method for dicing a wafer.
Fig. 3 is a flowchart illustrating a method for dicing a wafer according to an embodiment of the disclosure. Referring to fig. 3, the cutting method at least includes the following steps:
s100: providing a wafer to be cut; the wafer to be cut comprises a plurality of tube cores and a cutting channel positioned between two adjacent tube cores; the cutting channel comprises at least two sub-areas which are arranged in parallel along the extending direction of the cutting channel; the material thickness distribution in at least two sub-areas is different;
s200: applying a first laser energy to the first sub-region to cut the first sub-region; wherein the first laser energy is determined according to first statistical information of material thickness distribution in the first sub-area;
s300: applying a second laser energy to the second sub-region to cut the second sub-region; and determining the second laser energy according to second statistical information of the material thickness distribution in the second sub-area, wherein the second laser energy is different from the first laser energy.
In the embodiment of the disclosure, by applying the first laser energy to the first sub-area of the cutting street, the first sub-area of the cutting street can be accurately cut because the first laser energy is determined according to the first statistical information of the material thickness distribution in the first sub-area; through applying the second laser energy to the second subregion of cutting way, because the second laser energy is confirmed according to the second statistical information of material thickness distribution in the second subregion, can carry out accurate cutting to the second subregion of cutting way to the realization is to the accurate cutting of cutting way different regions, reduces the thickness difference after the different region cutting, is favorable to improving the roughness on the pipe core surface after the cutting. And the residual slag quantity after cutting in different areas can be reduced, the cleanliness of the surface of the tube core after cutting can be improved, and the process requirement of subsequent processing can be further met.
When the tube core with better flatness and cleanliness is adopted to execute the hybrid bonding, the difficulty of the hybrid bonding process is favorably reduced, and the efficiency and the bonding precision of the hybrid bonding process are improved.
Fig. 4 to 7 are schematic views illustrating a wafer dicing process according to an embodiment of the disclosure. The present disclosure will be described in further detail with reference to fig. 3, 4 to 7.
First, referring to fig. 4, step S100 is performed: providing a wafer 20 to be cut; the wafer 20 to be cut comprises a plurality of dies 21 and a cutting channel 22 located between two adjacent dies 21; the cutting street 22 comprises at least two sub-regions arranged in parallel along the extending direction of the cutting street; the material thickness distribution in at least two sub-regions is different.
The wafer 20 to be cut comprises a substrate and functional structures located on the substrate. In one example, the die 21 is a memory array die and, accordingly, the functional structure is an array of memory cells. In another example, die 21 is a peripheral circuit die and accordingly, the functional structure is a peripheral circuit element.
In one example, referring to fig. 4, scribe line 22 is located between two adjacent dies 21 and extends in the y-direction. In another example, dicing streets 22 are located between two adjacent dies 21 and extend in the x-direction. The following description will be given taking the example where the scribe line 22 extends in the y direction, however, the present disclosure is not limited thereto.
Here, the x-direction and the y-direction are parallel to the plane in which the wafer 20 to be cut is located, and the x-direction and the y-direction intersect. The angle between the x-direction and the y-direction includes an acute angle, a right angle, or an obtuse angle. Preferably, the angle between the x-direction and the y-direction is a right angle, i.e. the x-direction is perpendicular to the y-direction.
Referring to fig. 5, the scribe line 22 includes a first sub-area 22a and a second sub-area 22b juxtaposed in the y-direction. The first sub-region 22a is provided with a first test structure 231, and the first test structure 231 includes a first film layer 241a and a first second film layer 242a stacked along the z-direction. The second sub-region 22b is provided with a second test structure 232, and the second test structure 232 includes a second first film layer 241b and a second film layer 242b stacked along the z-direction. Here, the first film layer and the second film layer are different in constituent material.
The first sub-region 22a and the second sub-region 22b have different material thickness distributions, and include: the same material in the first sub-region 22a and the second sub-region 22b has different thicknesses.
For example, the thickness h of the first film layer 241a 1 And a thickness h of the second first film layer 241b 3 Different. In one example, the thickness h of the first film 241a 1 Is larger than the thickness h of the second first film 241b 3 . In another example, the thickness h of the first film layer 241a 1 Is less than the thickness h of the second first film 241b 3 。
As another example, the thickness h of the first and second film layers 242a 2 And a thickness h of the second film layer 242b 4 Different. In one example, the thickness h of the first and second film layers 242a 2 Is less than the thickness h of the second film layer 242b 4 . In another example, the thickness h of the first and second film layers 242a 2 Is greater than the thickness h of the second film layer 242b 4 。
The first sub-area 22a and the second sub-area 22b have different material thickness distributions, and further include: the thickness ratio of the same material in the first sub-region 22a and the second sub-region 22b is different.
For example, the thickness of the scribe line 22 is H, and the thickness of the first film layer 241a in the first sub-region 22a is proportional (i.e. H) 1 H) and the thickness of the second first film layer 241b in the second subregion 22b (i.e., H) 3 H) are different. In one example, the thickness fraction of the first film layer 241a within the first sub-area 22a is greater than the thickness fraction of the second first film layer 241b within the second sub-area 22 b. In another example, the thickness fraction of the first film layer 241a within the first subregion 22a is less than the thickness fraction of the second first film layer 241b within the second subregion 22 b.
As another example, the thickness fraction (i.e., h) of the first and second film layers 242a within the first sub-region 22a 2 H) and the thickness of the second film layer 242b in the second subregion 22b (i.e., H) 4 H) are different. In one example, the thickness fraction of the first second film layer 242a within the first sub-area 22a is less than the thickness fraction of the second film layer 242b within the second sub-area 22 b. In another example, the thickness fraction of the first second film layer 242a within the first sub-area 22a is greater than the thickness fraction of the second film layer 242b within the second sub-area 22 b.
It should be emphasized that the above description is made by taking the example that the scribe line includes two sub-regions juxtaposed in the y direction, and the test structure located in each sub-region includes two film layers stacked in the z direction, for conveying the disclosure to those skilled in the art, however, the number of the sub-regions juxtaposed in the y direction is not limited to two, and may be three, four or even more. The number of film layers stacked in the z direction of the test structure located in each sub-region is not limited to two, and may also be three, four or even more, and the disclosure is not further limited herein.
In some embodiments, before performing step S200, the cutting method further includes:
acquiring first statistical information; determining first laser energy according to the first statistical information;
before the step S300 is executed, the cutting method further includes:
acquiring second statistical information; and determining the second laser energy according to the second statistical information.
The first statistical information includes: statistical information of the material type in the first sub-area and statistical information of the thickness of each material in the first sub-area. The first laser energy may be determined based on the type of material and the thickness of each material in the first sub-region. Here, since the first laser energy is determined based on the first statistical information, the first laser energy may cause all of the material in the first sub-region to sublimate to completely remove the material in the first sub-region.
The first statistical information may further include: the statistical information of the melting point of each material in the first sub-area, the statistical information of the laser absorption rate of each material in the first sub-area, and the like.
The second statistical information includes: statistical information of the material type in the second sub-region and statistical information of the thickness of each material in the second sub-region. The second laser energy may be determined based on the type of material and the thickness of each material in the second sub-region. Here, since the second laser energy is determined based on the second statistical information, the second laser energy may cause all of the material in the second sub-region to sublimate to completely remove the material in the second sub-region.
The second statistical information may further include: the melting point of each material in the second sub-region, the laser absorption rate of each material in the second sub-region, and the like.
In some embodiments, the determining the first laser energy based on the first statistical information includes:
determining first laser energy according to the type of the material in the first sub-area and the thickness of each material;
the determining the second laser energy according to the second statistical information includes:
determining a second laser energy according to the type of the material in the second sub-area and the thickness of each material; wherein at least one different material exists in the first sub-area and the second sub-area; and/or the thickness of at least one same material in the first sub-area and the second sub-area is different.
In some embodiments, at least one different material is present in the first subregion and in the second subregion. For example, the first sub-region includes a first material and a second material, and the second sub-region includes the first material and a third material. For another example, the first sub-region includes a first material and a second material, and the second sub-region includes a second material and a third material. For another example, the first sub-region comprises a first material and a second material, and the second sub-region comprises a third material and a fourth material.
In some embodiments, the thickness of at least one of the same materials in the first sub-region and the second sub-region is different. For example, the first sub-region comprises a first material and a second material, the second sub-region comprises a first material and a second material, and the thickness of the first material in the first sub-region is different from the thickness of the first material in the second sub-region; and/or the thickness of the second material in the first sub-area is different from the thickness of the second material in the second sub-area.
In some embodiments, at least one different material is present in the first subregion and in the second subregion; the thickness of at least one of the same materials in the first sub-area and the second sub-area is different. For example, the first sub-region comprises a first material and a second material, the second sub-region comprises a first material and a third material, and the thickness of the first material in the first sub-region is different from the thickness of the first material in the second sub-region.
In some embodiments, the thickness of the first subregion is the same as the thickness of the second subregion. In other embodiments, the thickness of the first subregion is different from the thickness of the second subregion.
It should be noted that when the material type in the first sub-area is the same as the material type in the second sub-area, and the thickness of the same material in the first sub-area is the same as that in the second sub-area, the laser energy can be slotted at a constant value. However, due to the actual testing requirements, different testing structures are usually required to be disposed on the scribe lines of the wafer to test different electrical parameters of the dies. Namely, the constant laser energy is difficult to realize the accurate cutting of different test structures arranged on the cutting path.
In the embodiment of the disclosure, by acquiring first statistical information about the first sub-region, a first laser energy for cutting the first sub-region can be determined, so that accurate cutting of the first sub-region is realized. By obtaining second statistical information about the second sub-region, a second laser energy to cut the second sub-region can be determined, thereby achieving accurate cutting of the second sub-region.
When the cutting channel comprises more than two sub-regions, statistical information about each sub-region can be obtained, and then the laser energy required for cutting each sub-region is determined, so that accurate cutting of each sub-region is realized, the bottom of the laser grooved tube is smoother, the residual quantity of slag is less, the flatness and the cleanliness of the surface of the tube core after cutting are improved, and the technological requirements of subsequent processing are met.
And the mode of determining the laser energy required for cutting the subarea through the statistical information of each subarea is more accurate, which is favorable for reducing the probability of excessive cutting caused by excessive applied laser energy or the probability of material residue caused by insufficient applied laser energy.
In some embodiments, referring to fig. 5, the cutting streets comprise at least: a first membrane layer and a second membrane layer arranged in a stacked manner; wherein the thickness of the first film layer located in the first sub-area 22a is different from the thickness of the first film layer located in the second sub-area 22 b; the thickness of the second film layer located in the first sub-area 22a is different from the thickness of the second film layer located in the second sub-area 22 b;
the determining the first laser energy according to the first statistical information includes: determining a first laser energy based on the thickness of the first film layer and the thickness of the second film layer in the first sub-region 22 a;
the determining the second laser energy according to the second statistical information includes: the second laser energy is determined based on the thickness of the first film layer and the thickness of the second film layer in the second sub-region 22 b.
Here, the first film layer located in the first sub-region 22a is the first film layer 241a, the first film layer located in the second sub-region 22b is the second first film layer 241b, the second film layer located in the first sub-region 22a is the first second film layer 242a, and the second film layer located in the second sub-region 22b is the second film layer 242 b.
Illustratively, the laser energy q required to ablate 1 unit thickness of the first film layer may be determined based on the melting point of the first film layer or the laser absorption rate of the first film layer 1 . The laser energy q required to ablate 1 unit thickness of the second film layer can be determined according to the melting point of the second film layer or the laser absorptivity of the second film layer 2 。
According to the thickness h of the first film layer 241a 1 And a thickness h of first second film layer 242a 2 The first laser energy required to ablate the first sub-region 22a can be determined as Q 1 Wherein Q is 1 =（h 1 ×q 1 ）+（h 2 ×q 2 ）。
According to the thickness h of the second first film layer 241b 3 And a thickness h of the second film layer 242b 4 The second laser energy required to ablate the second sub-region 22b can be determined as Q 2 Wherein Q is 2 =（h 3 ×q 1 ）+（h 4 ×q 2 ）。
In the embodiment of the disclosure, according to the thickness of the first film layer and the thickness of the second film layer included in the first subregion, the first laser energy can be determined, the first laser energy is applied to the first subregion, according to the thickness of the first film layer and the thickness of the second film layer included in the second subregion, the second laser energy can be determined, the second laser energy is applied to the second subregion, the mode of determining the laser energy required by each subregion is simple, the method is compatible with the existing laser cutting process, no additional process is needed, and the laser cutting precision is increased while the efficiency of the laser cutting process is ensured.
In some embodiments, before performing the step S200 and the step S300, the cutting method further includes: acquiring design information of a wafer 20 to be cut, and determining first statistical information and second statistical information according to the design information; wherein the design information includes: layout design information of the wafer 20 to be cut and process dimension design information of the wafer 20 to be cut. Here, the process dimension includes a process dimension in the horizontal direction (i.e., x-direction and y-direction) and a process dimension in the vertical direction (i.e., z-direction).
Illustratively, by obtaining layout design information of the scribe line 22, the material of the first film layer and the material of the second film layer may be determined. It should be understood that the layout design information of the scribe lane 22 includes the layout design information of the first sub-region 22a and the layout design information of the second sub-region 22 b.
By obtaining the process dimension design information of the first sub-region 22a, the thickness h of the first film 241a can be determined 1 And a thickness h of first second film layer 242a 2 And determining first statistical information.
By obtaining process dimension design information of the second sub-region 22b, the thickness h of the second first film 241b can be determined 3 And a thickness h of the second film layer 242b 4 And further determining second statistical information.
In the embodiment of the disclosure, by obtaining the design information of the wafer to be cut, since the design information includes the layout design information of the wafer to be cut and the process size design information of the wafer to be cut, the first statistical information and the second statistical information can be determined, the first laser energy is determined according to the first statistical information, the second laser energy is determined according to the second statistical information, the design information of the wafer is applied to laser cutting, and the method is simple and has strong operability.
In some embodiments, before performing the step S200 and the step S300, the cutting method further includes: obtaining a detection result of a wafer to be cut, and determining first statistical information and second statistical information according to the detection result; wherein, the detection result includes: and detecting the material distribution and the thickness of the wafer to be cut.
The material distribution detection result comprises an X-ray diffraction spectrum, an X-ray fluorescence spectrum or an X-ray photoelectron spectrum and the like.
The thickness detection result comprises a scanning electron microscope atlas, a transmission electron microscope atlas, an atomic force microscope atlas and the like.
In practical applications, a certain lot of wafers are usually processed in a current station, and after the current station process is completed, at least one wafer in the lot is detected to determine whether there is an abnormality in the current station process.
For example, after the thin film deposition process is finished, scanning electron microscope inspection is performed on at least one wafer in the batch to determine whether the thickness of the film layer deposited in the thin film deposition process reaches the designed thickness. And carrying out X-ray diffraction detection on at least one wafer in the batch to judge whether impurities exist in the film layer deposited in the film deposition process.
Here, scanning electron microscopy and X-ray diffraction detection are merely examples, used to convey the disclosure to those skilled in the art. The detection after the station process is completed is not limited to the scanning electron microscope detection and the X-ray diffraction detection, and other detections may be used.
It can be understood that, through obtaining the testing result of waiting to cut the wafer, because the testing result includes the thickness testing result of the material distribution testing result of waiting to cut the wafer and the material, can obtain the material that the wafer includes and the actual thickness of material, confirm first statistical information and second statistical information according to the material that the wafer includes and the actual thickness of material, be favorable to improving the accuracy of first statistical information and second statistical information, and then be favorable to further improving laser cutting's precision.
In addition, the first statistical information and the second statistical information are determined by utilizing the detection result after the wafer station process is finished, so that the wafer station detection method is compatible with the existing wafer detection process without adding an additional detection process.
In some embodiments, the step S200 includes: under the condition of preset power, ablating the first sub-area for a first time length; wherein the preset power range comprises 1 watt to 50 watts;
the step S300 includes: ablating the second sub-region for a second duration under the preset power condition; wherein the second duration is different from the first duration.
Illustratively, the first laser energy required to ablate the first sub-region 22a is determined to be Q 1 Thereafter, the first sub-region 22a is ablated at a predetermined power P for a first time period t 1 I.e. the first test structure 231 within the first sub-area 22a may be removed.
Illustratively, the second laser energy required to ablate the second sub-region 22b is determined to be Q 2 Then, the second sub-region 22b is ablated at a predetermined power P for a second duration t 2 I.e. the second test structure 232 in the second sub-area 22b may be removed.
In some embodiments, the first laser energy is greater than the second laser energy; when the cutting track is cut under the preset power condition, the first time length is longer than the second time length.
In some embodiments, the first laser energy is less than the second laser energy; when the cutting track is cut under the preset power condition, the first time length is less than the second time length.
It will be appreciated that after determining the first laser energy and the predetermined power to perform the cut, a first time period required to ablate the first sub-region may be calculated, and after determining the second laser energy and the predetermined power to perform the cut, a second time period required to ablate the second sub-region may be calculated.
It should be noted that if the preset power is too low (e.g. less than 1 watt), it will result in more time for laser cutting and decrease the efficiency of laser cutting, and if the preset power is too low, the material in the cutting track will not be vaporized instantly, which will result in an increase in the amount of slag left and will not be removed easily. Excessive power (e.g., greater than 50 watts) can cause melting of the entire cut surface and even damage to the die adjacent to the cut path.
Here, by setting the range of the preset power between 1 watt and 50 watts, the residual amount of slag can be reduced while the efficiency of laser cutting is ensured, which is beneficial to improving the cleanliness of the tube core after cutting and reducing the probability of damage to the tube core adjacent to the cutting street.
In the embodiment of the disclosure, under a constant power condition (i.e., preset power), by adjusting the ablation time (i.e., adjusting the laser cutting frequency) of different sub-regions in the cutting street, the laser energy for ablating different sub-regions can be adjusted in time, so as to realize accurate cutting of different sub-regions in the cutting street, and improve the flatness and cleanliness of the surface of the cut tube core.
In some embodiments, the step S200 includes: under the condition of first power, ablating the first sub-area at a preset scanning speed; wherein the preset scanning speed range comprises 10mm/s to 1000 mm/s;
the step S300 includes: under the second power condition, the second sub-area is ablated at the preset scanning speed; wherein the second power is different from the first power.
Illustratively, the first laser energy required to ablate the first sub-region 22a is determined to be Q 1 Then, with the first power P 1 And ablating the first sub-region 22a at the predetermined scan speed to remove the first test structure 231 in the first sub-region 22 a.
Illustratively, the second laser energy required to ablate the second sub-region 22b is determined to be Q 2 Then at a second power P 2 And ablating the second sub-area 22b at the predetermined scan speed, the second test structure 232 in the second sub-area 22b can be removed.
In some embodiments, the first laser energy is greater than the second laser energy; when the first sub-area and the second sub-area are respectively cut at the preset scanning speed, the first power is larger than the second power.
In some embodiments, the first laser energy is less than the second laser energy; when the first sub-area and the second sub-area are respectively cut at the preset scanning speed, the first power is smaller than the second power.
It will be appreciated that after determining the first laser energy and the predetermined scan speed for performing the cut, a first power required to ablate a first sub-area may be calculated, and after determining the second laser energy and the predetermined scan speed for performing the cut, a second power required to ablate a second sub-area may be calculated.
It should be noted that the preset scanning speed is too small (e.g., less than 10 mm/s), which results in more time required for laser cutting and reduces cutting efficiency. An excessive scan speed (e.g., greater than 1000 mm/s) may result in a short contact time between the laser and the material of the scribe line, which may result in dicing failure or poor flatness of the diced die.
Here, by setting the range of the preset scanning speed between 10mm/s and 1000mm/s, the cutting street can be cut well while the efficiency of laser cutting is ensured, and the flatness of the cut tube core is improved.
In the embodiment of the disclosure, under the condition of a constant scanning speed, the laser cutting power of different sub-regions in the cutting channel is adjusted, so that the laser energy for ablating different sub-regions can be adjusted in time, and further, the accurate cutting of different sub-regions in the cutting channel is realized, and the improvement of the flatness and the cleanliness of the surface of the tube core after cutting is facilitated.
In addition, compared with the mode of adjusting the laser cutting frequency to adjust the laser energy, the mode of adjusting the laser cutting power to adjust the laser energy in the embodiment of the disclosure is simpler and more convenient to operate and has stronger operability.
In some embodiments, the step S200 includes: projecting a first laser beam onto a first sub-area;
the step S300 includes: projecting a second laser beam onto a second sub-area; wherein the spot size of the second laser beam is different from the spot size of the first laser beam.
Illustratively, the first laser energy required to ablate the first sub-region 22a is determined to be Q 1 Then, a first laser beam is projected to the first sub-area 22a, the first laser beamThe spot size of the beam in the first sub-region 22a is d 1 。
Illustratively, the second laser energy required to ablate the second sub-region 22b is determined to be Q 2 Then, a second laser beam is projected to the second sub-area 22b, and the spot size of the second laser beam in the second sub-area 22b is d 2 。
Here, the spot size of the laser beam can be changed by adjusting the size of the diaphragm in the laser cutting apparatus. The spot size of the laser beam may be the radius of the spot projected by the laser beam on the cut-line or the diameter of the spot projected by the laser beam on the cut-line. The smaller the spot size of the laser beam, the more concentrated the laser energy, and the higher the laser energy density, i.e., the greater the received laser energy per unit area. The larger the spot size of the laser beam, the more dispersed the laser energy, and the lower the laser energy density, i.e., the less laser energy received per unit area.
In some embodiments, the first laser energy is greater than the second laser energy; the spot size of the first laser beam is smaller than the spot size of the second laser beam.
In some embodiments, the first laser energy is less than the second laser energy; the spot size of the first laser beam is larger than the spot size of the second laser beam.
In the embodiment of the disclosure, the energy density of the laser beam can be adjusted in time by adjusting the size of the light spot projected by the laser beam on different sub-areas in the cutting channel, so that the laser energy for ablating different sub-areas can be adjusted, accurate cutting of different sub-areas in the cutting channel can be realized, and the flatness and the cleanliness of the surface of the tube core after cutting can be improved.
In some embodiments, the cutting line includes: various materials; before the step S200 and the step S300 are executed, the cutting method further includes:
establishing a database; wherein the database comprises laser energy required for ablation of each material per unit thickness;
determining a first laser energy according to the first statistical information and the database;
and determining the second laser energy according to the second statistical information and the database.
By counting the types of materials in each sub-region of the scribe line and counting the thickness of each material in the sub-region, statistical information about each sub-region of the scribe line can be determined. And determining the laser energy of each sub-region according to the statistical information of each sub-region and the established database. The following will be described by way of example with reference to table 1, fig. 6 and fig. 7, however, the present disclosure is not limited thereto.
Table 1 shows the laser energy required for ablation of a material of 100A thickness. Referring to table 1, the material in the cutting street includes: silicon nitride (SiN), silicon dioxide (SiO) 2 ) Aluminum (Al), copper (Cu), tungsten (W), nickel (Ni), and titanium (Ti).
Laser energy required for ablation of material with surface 1100A thickness
With SiO 2 Ablation of 100A thick SiO for reference 2 The required laser energy is 1x, the required laser energy for ablating SiN at a thickness of 100 a is 1.1x, the required laser energy for ablating Al at a thickness of 100 a is 0.4x, the required laser energy for ablating Cu at a thickness of 100 a is 0.7x, the required laser energy for ablating W at a thickness of 100 a is 2.1x, the required laser energy for ablating Ni at a thickness of 100 a is 0.8x, and the required laser energy for ablating Ti at a thickness of 100 a is 1.1 x. Here, x is a positive number.
In this example, SiO is used 2 A database as shown in table 1 was built for the benchmark. In other examples, the database may be built based on other materials, and the disclosure is not limited thereto.
FIG. 6 is a statistical data graph illustrating material thickness distribution in different regions of a scribe line of a wafer according to an embodiment of the disclosure. The abscissa represents the laser travel direction (i.e., the extending direction of the scribe line), and the ordinate represents the thickness of the material. Fig. 7 is a graph illustrating statistics of laser energy required for different areas within scribe lines of a wafer according to an embodiment of the present disclosure. Where the abscissa indicates the direction of laser travel and the ordinate indicates the laser energy required to ablate the material.
Referring to fig. 6, the total thickness H of the scribe line is 40000 a, the thickness of the same material in different regions (i.e., different locations) in the laser traveling direction (e.g., y direction) varies, and the ratio of the same material in different regions to the total thickness of the scribe line varies. Thus, performing laser cutting on different areas of the street requires applying different laser energies (as shown in fig. 7).
Illustratively, when the laser light travels to 5 μm, first statistical information at 5 μm is acquired, the first statistical information including the kind of material at 5 μm and the thickness of each material at 5 μm. Determining the first laser energy Q required for cutting 5 μm based on the first statistical information and the database shown in Table 1 1 。
Similarly, when the laser light travels to 10 μm, second statistical information at 10 μm is acquired, the second statistical information including the kind of material at 10 μm and the thickness of each material at 10 μm. Determining the second laser energy Q required for cutting 10 μm according to the second statistical information and the database shown in Table 1 2 。
Similarly, when the laser light travels to 15 μm, third statistical information at 15 μm is acquired, the third statistical information including the kind of material at 15 μm and the thickness of each material at 15 μm. Determining the third laser energy Q required for cutting 15 μm according to the third statistical information and the database shown in Table 1 3 。
It is emphasized that in the example shown in fig. 6, the total thickness of the cutting street is constant in the direction of travel of the laser. In other examples, however, the total thickness of the scribe line may vary in the direction of laser travel. For example, the total thickness of the scribe line where the laser travels to 5 μm is H 1 The total thickness of the cutting path where the laser advances to 10 μm is H 2 The total thickness of the cutting path where the laser advances to 15 μm is H 3 (ii) a Wherein H 1 、H 2 And H 3 At least two of which are different.
It can be understood that by executing the cutting method provided by the embodiment of the present disclosure, the laser energy required at each position in the laser advancing direction can be determined, and then the laser energy applied at each position is adjusted, so as to realize accurate cutting of the cutting street, so that the surface of the die after cutting is relatively flat and the residual slag amount is relatively small, which is beneficial to improving the flatness and cleanliness of the surface of the die after cutting, so as to meet the process requirements of subsequent processing.
The embodiment of the disclosure also provides a laser cutting device. This laser cutting device includes:
the bearing component is used for bearing the wafer to be cut; the wafer to be cut comprises a plurality of dies and a cutting channel positioned between two adjacent dies; the cutting channel comprises at least two sub-areas which are arranged in parallel along the extending direction of the cutting channel; the material thickness distribution in at least two sub-areas is different;
the cutting assembly is connected with the bearing assembly and used for applying first laser energy to the first sub-area so as to cut the first sub-area; wherein the first laser energy is determined according to first statistical information of material thickness distribution in the first sub-area;
a cutting assembly further configured to apply second laser energy to the second sub-area to cut the second sub-area; and determining the second laser energy according to second statistical information of the material thickness distribution in the second sub-area, wherein the second laser energy is different from the first laser energy.
The bearing assembly may include: a chuck, such as an electrostatic chuck, is used to chuck the wafer to be cut.
The wafer to be cut may be the wafer 20 to be cut shown in fig. 4 and 5, including a substrate and functional structures (e.g., memory cell arrays or peripheral circuit elements) located on the substrate. The wafer 20 to be diced includes a plurality of dies 21, and a dicing street 22 is disposed between two adjacent dies 21.
The cutting assembly is used for cutting the wafer to be cut so as to separate the plurality of dies into single dies. In particular, the cutting assembly travels in the direction of extension of the cutting street. During the advancing, the cutting assembly may apply a first laser energy to a first sub-region of the cut lane and a second laser energy different from the first laser energy to a second sub-region of the cut lane.
In some embodiments, the cutting assembly travels along the extension direction of the cutting street, comprising: the bearing component moves relative to the cutting component so as to drive the wafer to be cut to move relative to the cutting component, or the cutting component moves relative to the wafer to be cut.
In the embodiment of the disclosure, by arranging the cutting assembly, the cutting assembly can apply the first laser energy to the first sub-area of the cutting street, and the first laser energy is determined according to the first statistical information of the material thickness distribution in the first sub-area, so that the first sub-area of the cutting street can be accurately cut; the second laser energy can be applied to the second sub-area of the cutting channel by the cutting assembly, and the second laser energy is determined according to second statistical information of material thickness distribution in the second sub-area, so that the second sub-area of the cutting channel can be accurately cut, accurate cutting of different areas of the cutting channel is achieved, thickness difference after cutting of different areas is reduced, and improvement of flatness of the surface of a tube core after cutting is facilitated. And the residual slag quantity after cutting in different areas can be reduced, the cleanliness of the surface of the tube core after cutting can be improved, and the process requirement of subsequent processing can be further met.
When the tube core with better flatness and cleanliness is adopted to execute the hybrid bonding, the difficulty of the hybrid bonding process is favorably reduced, and the efficiency and the bonding precision of the hybrid bonding process are improved.
In some embodiments, the cutting street comprises: various materials; the above cutting device further comprises:
the storage component is respectively connected with the bearing component and the cutting component and at least used for storing first statistical information and second statistical information;
and the storage component is also used for storing a database of laser energy required by each material per unit thickness to be ablated.
The first statistical information includes: statistical information of the material type in the first sub-area and statistical information of the thickness of each material in the first sub-area. The first laser energy may be determined based on the type of material and the thickness of each material in the first sub-region.
The first statistical information may further include: the statistical information of the melting point of each material in the first sub-area, the statistical information of the laser absorptivity of each material in the first sub-area, and the like.
The second statistical information includes: statistical information of the material type in the second sub-region and statistical information of the thickness of each material in the second sub-region. The second laser energy may be determined based on the type of material and the thickness of each material in the second sub-region.
The second statistical information may further include: statistical information of the melting point of each material in the second sub-area and statistical information of the laser absorption rate of each material in the second sub-area, and the like.
Illustratively, the storage component may store first statistical information and second statistical information, the storage component may further store a database as shown in table 1 above, the cutting component may determine the first laser energy based on the first statistical information and the database, and the cutting component may determine the second laser energy based on the second statistical information and the database.
In the embodiment of the disclosure, by arranging the storage assemblies respectively connected with the bearing assembly and the cutting assembly, the laser energy required for performing laser cutting on each sub-area of the cutting channel can be accurately determined, and then the laser energy applied to each sub-area by the cutting assembly is adjusted, so that accurate cutting of the cutting channel is realized.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present disclosure, and all the changes or substitutions should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. A method for cutting a wafer is characterized by comprising the following steps:
providing a wafer to be cut; the wafer to be cut comprises a plurality of dies and a cutting channel positioned between two adjacent dies; the cutting channel comprises at least two sub-areas which are arranged in parallel along the extending direction of the cutting channel; the material thickness distribution in the at least two sub-areas is different;
applying a first laser energy to a first of the sub-regions to cut the first of the sub-regions; wherein the first laser energy is determined according to first statistical information of material thickness distribution in a first sub-area, and the first statistical information comprises the type of the material and the thickness of each material in the first sub-area;
applying a second laser energy to a second one of said sub-regions to cut the second one of said sub-regions; wherein the second laser energy is determined according to second statistical information of material thickness distribution in a second sub-region, the second statistical information including the type of material and the thickness of each material in the second sub-region; the second laser energy and the first laser energy are different.
2. The cutting method of claim 1, wherein prior to applying the first laser energy to a first one of the sub-regions, the cutting method further comprises:
acquiring the first statistical information; determining the first laser energy according to the first statistical information;
prior to applying the second laser energy to a second one of the sub-regions, the cutting method further comprises:
acquiring the second statistical information; and determining the second laser energy according to the second statistical information.
3. The cutting method according to claim 2, wherein at least one different material is present in a first of said sub-regions and in a second of said sub-regions; and/or the thickness of at least one same material in the first sub-area and the second sub-area is different.
4. The cutting method of claim 1, wherein prior to applying the first laser energy to a first one of the sub-regions and applying the second laser energy to a second one of the sub-regions, the cutting method further comprises:
obtaining design information of the wafer to be cut, and determining the first statistical information and the second statistical information according to the design information; the design information comprises layout design information of the wafer to be cut and process size design information of the wafer to be cut;
alternatively, the first and second liquid crystal display panels may be,
obtaining a detection result of the wafer to be cut, and determining the first statistical information and the second statistical information according to the detection result; and the detection result comprises a material distribution detection result of the wafer to be cut and a thickness detection result of the material.
5. The cutting method of claim 1, wherein said applying a first laser energy to a first one of said sub-regions comprises:
under the condition of preset power, ablating a first sub-area for a first time length; wherein the preset power range comprises 1 watt to 50 watts;
said applying a second laser energy to a second one of said sub-regions comprises:
under the preset power condition, a second sub-area is ablated for a second time length; wherein the second duration is different from the first duration.
6. The cutting method of claim 1, wherein said applying a first laser energy to a first one of said sub-regions comprises:
under the condition of first power, ablating a first sub-area at a preset scanning speed; wherein the preset scanning speed range comprises 10mm/s to 1000 mm/s;
said applying a second laser energy to a second one of said sub-regions comprises:
under the condition of second power, ablating a second sub-area at the preset scanning speed; wherein the second power is different from the first power.
7. The cutting method of claim 1, wherein said applying a first laser energy to a first one of said sub-regions comprises:
projecting a first laser beam onto a first one of said sub-areas;
said applying a second laser energy to a second one of said sub-regions comprises:
projecting a second laser beam onto a second one of said sub-areas; wherein a spot size of the second laser beam is different from a spot size of the first laser beam.
8. The cutting method of claim 1, wherein the cutting street comprises: various materials; prior to applying the first laser energy to a first one of the sub-areas and applying the second laser energy to a second one of the sub-areas, the dicing method further comprises:
establishing a database; wherein the database comprises laser energy required for ablation per unit thickness of each material;
determining the first laser energy according to the first statistical information and the database;
and determining the second laser energy according to the second statistical information and the database.
9. A laser cutting apparatus for carrying out the cutting method according to any one of claims 1 to 8, the laser cutting apparatus comprising:
the bearing component is used for bearing the wafer to be cut; the wafer to be cut comprises a plurality of dies and a cutting channel positioned between two adjacent dies; the cutting channel comprises at least two sub-areas which are arranged in parallel along the extending direction of the cutting channel; the material thickness distribution in the at least two sub-areas is different;
the cutting assembly is connected with the bearing assembly and is used for applying first laser energy to a first sub-area so as to cut the first sub-area; wherein the first laser energy is determined from first statistical information of material thickness distribution within a first of the sub-regions;
the cutting assembly is further used for applying second laser energy to a second sub-area to cut the second sub-area; and determining the second laser energy according to second statistical information of material thickness distribution in a second sub-area, wherein the second laser energy is different from the first laser energy.
10. The laser cutting apparatus of claim 9, wherein the scribe line comprises: various materials; the cutting device further comprises:
the storage component is respectively connected with the bearing component and the cutting component and at least used for storing the first statistical information and the second statistical information;
the memory component is also used for storing a database of laser energy required for each material per unit thickness to be ablated.
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