CN114583067A - Quantum dot light-emitting diode, display device and light-emitting light source - Google Patents

Quantum dot light-emitting diode, display device and light-emitting light source Download PDF

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CN114583067A
CN114583067A CN202011295669.XA CN202011295669A CN114583067A CN 114583067 A CN114583067 A CN 114583067A CN 202011295669 A CN202011295669 A CN 202011295669A CN 114583067 A CN114583067 A CN 114583067A
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邓承雨
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TCL Technology Group Co Ltd
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    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract

The application relates to the technical field of display devices, in particular to a quantum dot light-emitting diode, a display device and a light-emitting light source. The quantum dot light-emitting diode comprises an electron transport layer, a quantum dot layer and an electron blocking layer positioned between the electron transport layer and the quantum dot layer, wherein the electron blocking layer contains 9-phenylanthracene substituted by an electron withdrawing group. The 9-phenylanthracene substituted by the electron-withdrawing group has good electron mobility, can be well matched with an electron transport layer in energy level, so that the interface potential barrier of the electron transport layer and the electron transport layer is reduced, the injection and the storage of electrons are facilitated, the electron mobility rate is flexibly adjusted through the electron-withdrawing group, the electron mobility is matched with the hole mobility, and the injection of holes and electrons in a device is more balanced.

Description

Quantum dot light-emitting diode, display device and light-emitting light source
Technical Field
The application belongs to the technical field of display devices, and particularly relates to a quantum dot light-emitting diode, a display device and a light-emitting source.
Background
It is known that in a Quantum dot Light-Emitting Diode (QLED) device, the injection balance of electrons and holes is critical to achieve high efficiency and long lifetime of the device. In a common QLED device structure, an electron transport material is generally well matched with a valence band of a quantum dot, so that the electron injection strength is far higher than the hole injection strength. This unbalanced electron and hole injection overcharges the quantum dots, causes nonradiative auger recombination, and induces exciton dissociation, and may even cause parasitic emission, which is detrimental to the efficiency, lifetime, and color purity of the device.
Currently, the energy band structure of an electron transport material such as zinc oxide can be adjusted by ion doping or interface modification, so that the balanced injection of holes and electrons of a QLED device is realized. For example, magnesium-doped zinc oxide zinc magnesium oxide nanoparticles, aluminum-doped zinc oxide zinc aluminum oxide nanoparticles, and the like are used as electron transport materials, but the doped zinc oxide obtained by using these doping methods may have unstable performance superior to or lower than that of the original zinc oxide, thereby affecting the stability of the QLED device product.
Therefore, the prior art is in need of improvement.
Disclosure of Invention
The application aims to provide a quantum dot light-emitting diode, a display device and a light-emitting light source, and aims to solve the technical problem that holes and electrons of an existing quantum dot light-emitting diode device are unbalanced in injection.
In order to achieve the purpose of the application, the technical scheme adopted by the application is as follows:
in a first aspect, the present application provides a quantum dot light emitting diode comprising an electron transport layer, a quantum dot layer, and an electron blocking layer between the electron transport layer and the quantum dot layer, the electron blocking layer comprising 9-phenylanthracene substituted with an electron withdrawing group.
The application provides a quantum dot light-emitting diode, it sets up the electron blocking layer who contains the 9-phenylanthracene that is substituted by electron-withdrawing group between quantum dot layer and electron transport layer, this 9-phenylanthracene that is substituted by electron-withdrawing group has fine electron mobility can, can have fine energy level matching with electron transport layer, thereby reduce the interface barrier of the two, be favorable to the injection and the storage of electron, thereby accumulate a large amount of electrons at this electron blocking layer, and come nimble electron mobility rate of adjusting through electron-withdrawing group, make electron mobility and hole mobility phase-match, thereby make the injection of hole in the device more balanced with the electron, finally improve the luminous performance of device.
In a second aspect, the present application provides a display device comprising the quantum dot light emitting diode described above.
The application provides a display device includes this application specific quantum dot emitting diode, because of this quantum dot emitting diode sets up the electron blocking layer who contains the 9-phenylanthracene that is substituted by electron-withdrawing group between quantum dot layer and electron transport layer for this quantum dot emitting diode's electron and hole injection are better balanced, and the display device who is provided with this quantum dot emitting diode like this has better display performance.
In a third aspect, the present application provides a luminescent light source comprising the quantum dot light emitting diode described above.
The utility model provides a luminescent light source includes this application specific quantum dot emitting diode, because of this quantum dot emitting diode sets up the electron barrier layer who contains the 9-phenylanthracene that is substituted by electron-withdrawing group between quantum dot layer and electron transport layer for this quantum dot emitting diode's electron and hole injection are better balanced, and the luminescent light source who is provided with this quantum dot emitting diode like this has better luminous performance.
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In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of a quantum dot light emitting diode according to an embodiment of the present application;
fig. 4 is a schematic diagram illustrating a hole-electron injection balance principle of a quantum dot light emitting diode according to an embodiment of the present application.
Detailed Description
In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly apparent, the present application is further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are merely illustrative of and not restrictive on the broad application.
The first aspect of the embodiments of the present application provides a quantum dot light emitting diode, as shown in fig. 1, including an electron transport layer, a quantum dot layer, and an electron blocking layer located between the electron transport layer and the quantum dot layer, where the electron blocking layer contains 9-phenylanthracene substituted with an electron withdrawing group.
The application provides a quantum dot light-emitting diode, it sets up the electron blocking layer who contains the 9-phenylanthracene that is substituted by electron-withdrawing group between quantum dot layer and electron transport layer, this 9-phenylanthracene that is substituted by electron-withdrawing group has fine electron mobility can, can have fine energy level matching with electron transport layer, thereby reduce the interface barrier of the two, be favorable to the injection and the storage of electron, thereby accumulate a large amount of electrons at this electron blocking layer, and come nimble electron mobility rate of adjusting through electron-withdrawing group, make electron mobility and hole mobility phase-match, thereby make the injection of hole in the device more balanced with the electron, finally improve the luminous performance of device.
In some embodiments, the HOMO level of the 9-phenylanthracene substituted with an electron-withdrawing group in the electron blocking layer is between-7.0 and-7.2 eV. The 9-phenylanthracene substance has good electron transfer performance, the HOMO energy level can reach-7.0 to-7.2 eV after being substituted by an electron-withdrawing group, and can be matched with the energy levels of various electron transport layers to the maximum extent, thereby reducing the potential barrier of the interface of the two layers,
in some embodiments, the 9-phenylanthracene substituted with an electron withdrawing group is selected from at least one of formulas I-V as follows:
Figure BDA0002785236290000041
wherein X1、X2、X3、X4And X5Are the same or different electron withdrawing groups, preferably, the electron withdrawing groups are selected from at least one of nitro, chloro, fluoro, bromo, and iodo groups.
The electron-blocking layer containing the above-mentioned 9-phenylanthracene substituted with an electron-withdrawing group can accumulate a large amount of electrons in the electron-blocking layer, and can adjust the electron transfer rate according to the number of electron-withdrawing groups and the electron-withdrawing ability.
In some embodiments, the electron blocking layer may include 9-phenylanthracene substituted with an electron withdrawing group, and may also include other materials having an electron blocking function. In a preferred embodiment, the electron blocking layer is comprised of the 9-phenylanthracene substituted with an electron withdrawing group. Further preferably, the thickness of the electron blocking layer is 20-60 nm.
In some embodiments, the electron transport layer materials include, but are not limited to: at least one of zinc oxide, zirconium dioxide, titanium dioxide, tin dioxide, etc., preferably zinc oxide. The zinc oxide nano-particles have higher electron mobility, mue≈1.8×10-3cm2And V · s, 1-3 orders of magnitude higher than the mobility of commonly used hole transport materials, which are well matched to the valence band of quantum dots. Meanwhile, the energy levels of the 9-phenylanthracene substituted by the electron-withdrawing group and the zinc oxide are more matched, so that the defect that the electron injection strength of a device of a zinc oxide electron transport layer is far higher than the hole injection strength can be well avoided, and the injection of holes and electrons of the device is more balanced.
In some embodiments, as shown in fig. 2, the quantum dot light emitting diode includes an electron transport layer, a quantum dot layer, and the electron blocking layer between the electron transport layer and the quantum dot layer, and a hole blocking layer is further disposed between the quantum dot light emitting layer and the electron blocking layer, and the hole blocking layer contains a pyrimidine substitute of 1,3, 5-triphenylbenzene.
The hole blocking layer is a "passive blocking" or "protective blocking" in the present application, and is intended to maximally retain holes in the quantum dot layer, so as to form more excitons, unlike the existing active hole blocking (i.e. actively reducing or delaying the number or rate of hole injection). The hole blocking layer and the electron blocking layer are arranged on the same side of the quantum dot layer, so that holes can be transferred into the light-emitting layer at the maximum rate and in the maximum quantity, and the light-emitting efficiency is ensured; then, the quantum dot layer is separated from the electron blocking layer by the hole blocking layer, so that the problem that the electron transport layer emits light due to the fact that holes or excitons are transferred to the electron transport layer is avoided, and the color domain purity of the quantum dot light emission is further improved.
The pyrimidine substitute of 1,3, 5-triphenylbenzene has a unique star-shaped molecular structure and a pyrimidine modification unit, and the HOMO and LUMO energy levels of the compound can be effectively adjusted by adjusting the substitution position of a nitrogen atom in pyrimidine, so that the energy level of the electron blocking layer is covered by the whole energy level of the compound, thereby effectively limiting holes or excitons in the quantum dot layer from diffusing into the electron transport layer and increasing the luminous efficiency of the excitons.
In some embodiments, the pyrimidine substituent of 1,3, 5-triphenylbenzene in the hole blocking layer has a triplet energy level greater than 2.8 eV. For 1,3, 5-triphenylbenzene as a center, pyrimidine is a peripheral modified electron-withdrawing group, the LUMO energy level is mainly concentrated on the peripheral pyrimidine group, the HOMO energy level is mainly concentrated on the central triphenylbenzene, and the HOMO energy level of molecules is gradually reduced to be lower than-6.5 eV along with the increase of the electron withdrawing capability of the peripheral group, so that the hole blocking material has good hole blocking capability.
More preferably, the pyrimidine substituent of the 1,3, 5-triphenylbenzene is selected from at least one of 1,3, 5-tri (2-pyrimidylphenyl) benzene, 1,3, 5-tri (4-pyrimidylphenyl) benzene and 1,3, 5-tri (5-pyrimidylphenyl) benzene, and has the following structure:
Figure BDA0002785236290000061
in some embodiments, the hole blocking layer contains the pyrimidine substituent of the 1,3, 5-triphenylbenzene, and may also contain other materials having a hole blocking function. In a preferred embodiment, the hole blocking layer is composed of a pyrimidine substituent of the 1,3, 5-triphenylbenzene, and preferably, the thickness of the hole blocking layer is 5 to 30 nm.
Furthermore, the electron blocking layer and the hole blocking layer are combined with the zinc oxide electron transmission layer with high mobility, the electron blocking layer is used for adjusting the zinc oxide electron mobility rate and the hole blocking layer to prevent holes from diffusing across layers, the electron injection balance and the hole injection balance are achieved, the performance and the service life of the device are improved, and the purposes of improving the luminous efficiency and the service life of the QLED device are achieved.
Further, a hole transport layer, or a hole injection layer and a hole transport layer which are stacked, is provided between the quantum dot layer and the anode. As shown in fig. 3, the quantum dot light emitting diode includes an anode, a hole injection layer, a hole transport layer, a quantum dot layer, a hole blocking layer, an electron transport layer, and a cathode, which are sequentially stacked.
For example, the anode is ITO, the hole injection layer is PEDOT, the electron transport layer is a zinc oxide layer, and the cathode is Al, as shown in fig. 4, the hole blocking layer retains the hole blocking to the quantum dot layer, and the injection rate of electrons is slowed down by the electron-withdrawing electron functional group on the electron blocking layer, so that the hole-electron injection balance is achieved. The hole blocking layer and the electron blocking layer are arranged on the same side of the quantum dot layer, so that the hole transmission layer can be prevented from being dissolved when the hole blocking layer is prepared (the hole blocking layer and the hole transmission layer use polar solvents, the polarities of the solvents are close and mutual solubility easily occurs, but the polarities of the solvents are different from those of the quantum dot layer, and the quantum dot layer is isolated and protected). Meanwhile, the hole blocking layer and the electron blocking layer are made of benzene series materials, and the potential barrier difference between layer boundaries is small, so that the electron transmission is facilitated.
Specifically, the preparation method of the quantum dot light-emitting diode comprises the following steps:
1. preparing an anode: taking the anode as Indium Tin Oxide (ITO) as an example, the cleaned ITO substrate is treated by ultraviolet ozone for a period of time so as to improve the surface work function and the hydrophilicity of the ITO substrate.
2. Preparing a hole injection layer: poly (3, 4-ethylenedioxythiophene): taking poly (styrene sulfonic acid) (PEDOT: PSS) as an example, a certain amount of PEDOT: PSS solution is dripped on an ITO substrate, spin-coated at the rotating speed of 4000r/min and then annealed, and a PEDOT: PSS film is obtained to be used as a hole injection layer. PEDOT PSS films range in thickness from 20 to 50nm, preferably 30 nm. The mass range of PEDOT to PSS is 1-5g, preferably 2 g.
3. Preparing a hole transport layer: and transferring the ITO substrate coated with the PEDOT PSS film into a glove box filled with nitrogen atmosphere for protection, and spin-coating a hole transport layer material at the rotating speed of 3000 r/min. Hole transport layer materials include, but are not limited to: poly [ bis (4-phenyl) (4-butylphenyl) amine ] solution (poly-TPD), N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine solution (NPB), N, N, N ', N' -tetraphenyl-2, 6-Naphthalenediamine (NDDP), 4- [1- [4- [ bis (4-methylphenyl) amino ] phenyl ] cyclohexyl ] -N- (3-methylphenyl) -N- (4-methylphenyl) aniline (TAPC), preferably NPB solution. The thickness of the hole transport layer film is in the range of 40 to 60nm, preferably 45 nm. The mass of the hole transport material is in the range of 0.5 to 2g, preferably 1.5 g.
4. Preparing a quantum dot layer: the quantum dot materials of the quantum dot layer include, but are not limited to: II-VI, III-V and IV-VI quantum dots, all-inorganic perovskite quantum dots, organic-inorganic perovskite quantum dots, copper-sulfur-indium ternary quantum dots and silicon quantum dots; the quantum dot architectures include, but are not limited to: the structure comprises a quantum dot homogeneous binary component mononuclear structure, a quantum dot homogeneous multi-component alloy component mononuclear structure, a quantum dot multi-component gradient mononuclear structure, a quantum dot binary component discrete core-shell structure, a quantum dot multi-component discrete core-shell structure or a quantum dot multi-component gradient core-shell structure; the core and shell compounds of the quantum dots are CdSe, CdS, ZnSe, ZnS, CdTe, ZnTe, CdZnS, ZnSeS, CdSeSTe or CdZnSeTe of II-VI groups, including but not limited to InP, InAs or InAsP of III-V groups, and PbS, PbSe, PbSeS, PbSeTe or PbSTe of IV-VI groups. The quantum dot layer thickness is in the range of 5-20nm, preferably 10 nm. The quantum dots have a mass of 0.1-0.5 g. Preferably 0.4 g.
5. Preparing a hole blocking layer: the use of a pyrimidine substituent of star 1,3, 5-triphenylbenzene as a hole blocking layer, the materials used include but are not limited to pyrimidine substituted derivatives of star 1,3, 5-triphenylbenzene: 1,3, 5-tris (2-pyrimidinylphenyl) benzene, 1,3, 5-tris (4-pyrimidinylphenyl) benzene, 1,3, 5-tris (5-pyrimidinylphenyl) benzene. Solvents used include, but are not limited to: chlorobenzene, chloroform, o-dichlorobenzene, preferably chlorobenzene. The hole blocking layer has a thickness in the range of 5-30nm, preferably 15 nm. The amount of substance substituted by star-shaped 1,3, 5-triphenylbenzene is in the range of 0.1 to 0.8g, preferably 0.4 g.
6. Preparing an electron blocking layer: the electron-withdrawing functional group substituted 9-phenylanthracene is used as an electron blocking layer, and the electron-withdrawing functional group substituted 9-phenylanthracene used includes, but is not limited to: at least one of the above formulas I-V; wherein X1、X2、X3、X4And X5Is the same or different electron-withdrawing group, and is specifically selected from at least one of nitro, chloro, fluoro, bromo and iodo. The electron blocking layer has a thickness in the range of 20-60nm, preferably 50 nm. The mass range is 1.5-5g, preferably 2.2 g. The electron blocking layer can accumulate a large number of electrons in the layer, and can adjust the electron transfer rate according to the number of electron-withdrawing functional groups and the electron-withdrawing ability.
7. Preparing an electron transport layer: the thickness of the electron transport layer is in the range of 20-40nm, preferably 25 nm. The mass of the electron transport layer is in the range of 0.1 to 1.5g, preferably 1.1 g. Electron transport layer materials include, but are not limited to: at least one of zinc oxide, zirconium dioxide, titanium dioxide, tin dioxide, etc., preferably zinc oxide.
8. Preparing a cathode: taking aluminum as an example, aluminum electrodes are evaporated and packaged.
A second aspect of the embodiments of the present application provides a display device, where the display device includes the above-mentioned quantum dot light emitting diode of the present application.
The application provides a display device includes this application specific quantum dot emitting diode, because of this quantum dot emitting diode sets up the electron barrier layer who contains the 9-phenylanthracene that is substituted by electron-withdrawing group between quantum dot layer and electron transport layer for this quantum dot emitting diode's electron and hole injection are better balanced, and the display device who is provided with this quantum dot emitting diode like this has better display performance.
Further, the display device is a flat panel display.
A third aspect of the embodiments of the present application provides a luminescent light source, which includes the above-mentioned quantum dot light emitting diode of the present application.
The utility model provides a luminescent light source includes this application specific quantum dot emitting diode, because of this quantum dot emitting diode sets up the electron barrier layer who contains the 9-phenylanthracene that is substituted by electron-withdrawing group between quantum dot layer and electron transport layer for this quantum dot emitting diode's electron and hole injection are better balanced, and the luminescent light source who is provided with this quantum dot emitting diode like this has better luminous performance.
The following description will be given with reference to specific examples.
Example 1
A quantum dot light emitting diode, as shown in fig. 3, which comprises, from bottom to top: an anode, a hole injection layer, a hole transport layer, a quantum dot layer, a hole blocking layer, an electron transport layer, and a cathode. The preparation method of the quantum dot light-emitting diode comprises the following steps:
(1) pretreatment of an anode, namely an Indium Tin Oxide (ITO) substrate: and (3) treating the cleaned indium tin oxide substrate by ultraviolet ozone for 10 minutes to improve the surface work function and the hydrophilicity of the ITO substrate.
(2) Preparing a hole injection layer: and spin-coating 1.2g of PEDOT/PSS solution on an ITO substrate at the rotating speed of 4000r/min, and then annealing to obtain a PEDOT/PSS film with the thickness of 20nm as a hole injection layer.
(3) Preparing a hole transport layer: the ITO substrate coated with the PEDOT: PSS film was transferred to a glove box protected by nitrogen, and a solution of 0.5g of Poly [ bis (4-phenyl) (4-butylphenyl) amine ] (Poly-TPD) dissolved in chloroform was spin-coated onto the hole injection layer at 3000r/min, to obtain a hole transport layer having a film thickness of 40 nm.
(4) Preparing a quantum dot layer: 0.1g of CdSe quantum dots are spin-coated on the hole transport layer at the rotating speed of 3000r/min to obtain the quantum dot light-emitting layer with the film thickness of 5 nm.
(5) Preparing a hole blocking layer: 0.15g of 1,3, 5-tris (2-pyrimidylphenyl) benzene was spin-coated onto the quantum dot layer at 3000r/min to obtain a hole-blocking layer with a film thickness of 5 nm.
(6) Preparing an electron blocking layer: 1.5g of 1-nitrophenyl-9-anthracene is spin-coated at a speed of 3000r/min on the hole-blocking layer to obtain an electron-blocking layer with a film thickness of 20 nm.
(7) Preparing an electron transport layer: 0.2g of zinc oxide solution is spin-coated on the electron blocking layer at a rotating speed of 3000r/min, and a zinc oxide layer with the thickness of 20nm is obtained and used as an electron transmission layer.
(8) Preparing a cathode: and (4) evaporating an aluminum electrode on the electron transport layer, and packaging.
Example 2
A quantum dot light emitting diode, as shown in fig. 3, which comprises, from bottom to top: an anode, a hole injection layer, a hole transport layer, a quantum dot layer, a hole blocking layer, an electron transport layer, and a cathode. The preparation method of the quantum dot light-emitting diode comprises the following steps:
(1) pretreatment of an anode, namely an Indium Tin Oxide (ITO) substrate: the cleaned indium tin oxide substrate is treated by ultraviolet ozone for 20 minutes to improve the surface work function and the hydrophilicity of the ITO substrate.
(2) Preparing a hole injection layer: and (3) spin-coating 5g of PEDOT/PSS solution on an ITO substrate at the rotating speed of 4000r/min, and then annealing to obtain a PEDOT/PSS film with the thickness of 50nm as a hole injection layer.
(3) Preparing a hole transport layer: the ITO substrate coated with the PEDOT: PSS film was transferred into a glove box filled with nitrogen atmosphere for protection, and 1.8g of 4- [1- [4- [ bis (4-methylphenyl) amino ] phenyl ] cyclohexyl ] -N- (3-methylphenyl) -N- (4-methylphenyl) aniline was dissolved in chlorobenzene and spin-coated onto the hole injection layer at 3000r/min to obtain a hole transport layer having a film thickness of 60 nm.
(4) Preparing a quantum dot layer: 0.5g of PbSeS quantum dots are coated on the hole transport layer in a spin mode at the rotating speed of 3000r/min, and a quantum dot light-emitting layer with the film thickness of 20nm is obtained.
(5) Preparing a hole blocking layer: 0.8g of 1,3, 5-tris (5-pyrimidylphenyl) benzene was spin-coated onto the quantum dot layer at 3000r/min to obtain a hole-blocking layer with a film thickness of 30 nm.
(6) Preparing an electron blocking layer: 4.8g of 1,2, 3-trichlorophenyl-9-anthracene is spin-coated on the hole blocking layer at a rotating speed of 3000r/min to obtain the electron blocking layer with the film thickness of 60 nm.
(7) Preparing an electron transport layer: 1.5g of zirconium dioxide solution was spin-coated onto the electron-blocking layer at 3000r/min, to give a 40nm thick potassium silicate layer as the electron-transporting layer.
(8) Preparing a cathode: and (4) evaporating and plating an aluminum electrode on the electron transport layer, and packaging.
Example 3
A quantum dot light emitting diode, as shown in fig. 3, which comprises, from bottom to top: an anode, a hole injection layer, a hole transport layer, a quantum dot layer, a hole blocking layer, an electron transport layer, and a cathode. The preparation method of the quantum dot light-emitting diode comprises the following steps:
(1) pretreatment of an anode, namely an Indium Tin Oxide (ITO) substrate: the cleaned indium tin oxide substrate is treated by ultraviolet ozone for 30 minutes to improve the surface work function and the hydrophilicity of the ITO substrate.
(2) Preparing a hole injection layer: 2g of PEDOT PSS solution is coated on an ITO substrate in a rotating speed of 3000r/min in a rotating mode and then annealed, and a PEDOT PSS film with the thickness of 30nm is obtained to be used as a hole injection layer.
(3) Preparing a hole transport layer: the ITO substrate coated with the PEDOT: PSS film was transferred into a glove box filled with nitrogen atmosphere for protection, 0.8g of N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine solution (NPB) and N, N, N ', N' -tetraphenyl-2, 6-naphthalenediamine were dissolved in o-dichlorobenzene and spin-coated at 3000r/min to obtain a hole injection layer having a film thickness of 45 nm.
(4) Preparing a quantum dot layer: 0.4g of silicon quantum dots are spin-coated on the hole transport layer at the rotating speed of 3000r/min to obtain a quantum dot light-emitting layer with the film thickness of 10 nm.
(5) Preparing a hole blocking layer: then 0.4g of 1,3, 5-tris (4-pyrimidylphenyl) benzene was spin-coated onto the quantum dot layer at 3000r/min to obtain a hole blocking layer with a film thickness of 15 nm.
(6) Preparing an electron blocking layer: 2.2g of 1,2,3,4, 5-pentaiodophenyl-9-anthracene was spin-coated on the hole-blocking layer at 3000r/min to obtain an electron-blocking layer with a film thickness of 50 nm.
(7) Preparing an electron transport layer: 1.1g of titanium dioxide solution is spin-coated on the electron blocking layer at a rotating speed of 3000r/min, and a lithium fluoride layer with the thickness of 25nm is obtained and used as an electron transport layer.
(8) Preparing a cathode: and evaporating an upper aluminum electrode and packaging.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. A quantum dot light emitting diode comprises an electron transport layer, a quantum dot layer and an electron blocking layer positioned between the electron transport layer and the quantum dot layer,
the electron blocking layer contains 9-phenylanthracene substituted with an electron withdrawing group.
2. The quantum dot light-emitting diode of claim 1, wherein the HOMO level of the 9-phenylanthracene substituted with an electron withdrawing group is from-7.0 to-7.2 eV.
3. The qd-led of claim 2, wherein the 9-phenylanthracene substituted with an electron withdrawing group is selected from at least one of formulas I-V as follows:
Figure FDA0002785236280000011
wherein, X1、X2、X3、X4And X5Are the same or different electron withdrawing groups,
preferably, the electron withdrawing group is selected from at least one of nitro, chloro, fluoro, bromo and iodo.
4. The quantum dot light-emitting diode of claim 1, wherein the electron blocking layer consists of the 9-phenylanthracene substituted with an electron withdrawing group,
preferably, the thickness of the electron blocking layer is 20 to 60 nm.
5. The quantum dot light emitting diode of any one of claims 1 to 4, wherein a hole blocking layer is further disposed between the quantum dot light emitting layer and the electron blocking layer, and the hole blocking layer comprises a pyrimidine substituent of 1,3, 5-triphenylbenzene.
6. The quantum dot light-emitting diode of claim 5, wherein the triplet energy level of the pyrimidine substituent of 1,3, 5-triphenylbenzene is greater than 2.8eV,
preferably, the HOMO energy level of the pyrimidine substituent of the 1,3, 5-triphenylbenzene is below-6.5 eV,
more preferably, the pyrimidine substituent of the 1,3, 5-triphenylbenzene is selected from at least one of 1,3, 5-tris (2-pyrimidylphenyl) benzene, 1,3, 5-tris (4-pyrimidylphenyl) benzene and 1,3, 5-tris (5-pyrimidylphenyl) benzene.
7. The quantum dot light-emitting diode of claim 5, wherein the hole blocking layer is composed of a pyrimidine substituent of the 1,3, 5-triphenylbenzene,
preferably, the hole blocking layer has a thickness of 5 to 30 nm.
8. A display device comprising a qd-led according to any one of claims 1 to 7.
9. The display device of claim 8, wherein the display device is a flat panel display.
10. A luminescent light source comprising a qd-led according to any one of claims 1 to 7.
CN202011295669.XA 2020-11-18 2020-11-18 Quantum dot light-emitting diode, display device and light-emitting light source Pending CN114583067A (en)

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