CN114567274A - Power amplifier module - Google Patents
Power amplifier module Download PDFInfo
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- CN114567274A CN114567274A CN202210180643.3A CN202210180643A CN114567274A CN 114567274 A CN114567274 A CN 114567274A CN 202210180643 A CN202210180643 A CN 202210180643A CN 114567274 A CN114567274 A CN 114567274A
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- power amplifier
- stage
- matching network
- stage power
- final
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 32
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 22
- 230000003321 amplification Effects 0.000 claims abstract description 20
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 20
- 230000008569 process Effects 0.000 claims abstract description 20
- 239000011162 core material Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000009466 transformation Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
Abstract
The invention discloses a power amplifier module, which comprises a driving-stage power amplification unit and a final-stage power amplifier, wherein a first inter-stage matching network is arranged between the driving-stage power amplification unit and the final-stage power amplifier, an input matching network is connected in front of the driving-stage power amplification unit, and an output matching network is connected behind the final-stage power amplifier; the transistor tube core material that final stage power amplifier adopted is gallium nitride, and at least one tube core material in the transistor that drive level power amplification unit adopted is gallium arsenide. The final power amplifier of the invention adopts GaN, and the driving power amplifier/pre-driving power amplifier is realized by adopting a GaAs HBT process, thereby overcoming the problems of overhigh cost and narrower bandwidth in the high power level of the power amplifier module designed only by using GaN.
Description
Technical Field
The invention belongs to the technical field of microwave power amplifiers and integrated circuits, and particularly relates to a power amplifier module.
Background
With the rapid development of communication technology, the demand for power grade of power amplifier is gradually increased, and at this time, the application of new material gallium nitride (GaN) is increasing. Gallium nitride (GaN) power semiconductor technology has made a great contribution to improving the performance level of RF/microwave power amplification. GaN transistors have achieved higher output power density, wider bandwidth and better DC to RF efficiency by reducing the parasitic elements of the device, and employing shorter gate lengths and higher operating voltages. GaN supports very high operating voltages (three to five times higher than gallium arsenide (GaAs)) and allows roughly twice as much current per unit FET gate width as GaAs devices, these characteristics being of great significance to power amplifier design, meaning that higher load impedances can be supported at a given output power level. The output impedance of GaAs based designs is often extremely low (relative to typical system impedances of 50 Ω or 75 Ω) and the low device impedance limits the achievable bandwidth, i.e. as the impedance conversion ratio between the amplifier device and its load is required to increase, the number of components and the insertion loss also increase.
A major obstacle to expanding the use of GaN in high power applications is its relatively high manufacturing cost, typically two to three times higher than GaAs and five to seven times higher than Si LDMOS devices. Meanwhile, for a multi-stage cascaded power amplifier, the main factor limiting the bandwidth is the impedance transformation ratio between the front stage power amplifier and the rear stage power amplifier. As the previous stage driving power amplifier, its output impedance is generally high (usually up to hundreds of Ω) due to its low power level, and the input impedance of the later stage power amplifier is generally low (several Ω), which generates a large impedance transformation ratio therebetween, and this also greatly limits the bandwidth between the two stages, thereby limiting the bandwidth of the whole power amplifier.
The above two reasons have hindered the use of GaN power amplifiers in cost sensitive applications such as wireless infrastructure and consumer handheld devices. At this time, new process combinations need to be explored to ensure the power level and reduce the cost and expand the bandwidth at the same time.
Disclosure of Invention
Aiming at the problems of high cost and narrow bandwidth of a power amplifier at a high power level in the prior art, the invention provides a power amplifier module which is beneficial to reducing the cost and expanding the bandwidth while ensuring the power.
In order to achieve the purpose, the invention adopts the following technical scheme:
a power amplifier module comprises a driving stage power amplification unit and a final stage power amplifier, wherein a first inter-stage matching network is arranged between the driving stage power amplification unit and the final stage power amplifier, an input matching network is connected in front of the driving stage power amplification unit, and an output matching network is connected behind the final stage power amplifier; the transistor tube core material that the final power amplifier adopted is gallium nitride, at least one tube core material in the transistor that drive level power amplification unit adopted is gallium arsenide.
In a preferred embodiment, the driver power amplifier unit is a driver power amplifier, and the transistor die is made of gallium arsenide.
As a preferred embodiment, the driver power amplifying unit includes a driver power amplifier and a pre-driver power amplifier, an input terminal of the pre-driver power amplifier is connected to an output terminal of the input matching network, and an output terminal of the pre-driver power amplifier is connected to the second inter-stage matching network and then connected to an input terminal of the driver power amplifier; the transistor tube core material adopted by the pre-drive level power amplifier is gallium arsenide, and the transistor tube core material adopted by the drive level power amplifier is gallium arsenide or gallium nitride.
Further, the first inter-stage matching network is a low-pass filter, a high-pass filter or a band-pass filter, and the input impedance of the final power amplifier and the output impedance of the driving power amplifier are respectively arranged at two ends of the first inter-stage matching network.
Further, the transistor dies of the driving stage power amplifier, the final stage driving amplifier and the pre-driving stage power amplifier are connected with the matching network through any one of bonding wires, ribbon bonding and flip chip bonding.
Furthermore, the input matching network, the output matching network, the first inter-stage matching network and the second inter-stage matching network are all realized by at least one of a gallium arsenide HBT process, a gallium arsenide IPD process and a substrate patch element.
Further, the output end of the output matching network is connected with a load impedance.
The final power amplifier of the invention adopts GaN, and the driving power amplifier/pre-driving power amplifier is realized by adopting a GaAs HBT process, thereby overcoming the problems of overhigh cost and narrower bandwidth in the high power level of the power amplifier module designed only by using GaN.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a power amplifier module designed by a gallium arsenide and gallium nitride mixed process according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a multi-stage power amplifier module designed by using a mixed process of GaAs and GaN;
FIG. 3 is a schematic diagram of another multi-stage power amplifier module designed using a mixed GaAs and GaN process;
FIG. 4 is a diagram of a first inter-stage matching network architecture employed in an embodiment of the present invention;
FIG. 5(a) is a schematic diagram of the bandwidth of the first inter-stage matching network when the driver-stage power amplifier and the final-stage power amplifier are both gallium nitride dies;
fig. 5(b) is a schematic diagram of the bandwidth of the matching network between the first stage when the driver stage power amplifier is a gallium arsenide die and the final stage power amplifier is a gallium nitride die.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover non-exclusive inclusions, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In the present application, the terms "upper", "lower", "front", "rear", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation. Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meaning of these terms in this application will be understood by those of ordinary skill in the art as appropriate.
The embodiment provides a power amplifier module, which comprises a driving stage power amplification unit and a final stage power amplifier, wherein a first inter-stage matching network is arranged between the driving stage power amplification unit and the final stage power amplifier, an input matching network is connected in front of the driving stage power amplification unit, and an output matching network is connected behind the final stage power amplifier. The material of a transistor tube core adopted by the final-stage power amplifier is gallium nitride GaN, and at least one tube core in the transistors adopted by the driving-stage power amplification unit is gallium arsenide HBT. Compared with gallium nitride, the cost of gallium arsenide process is two to three times lower, and gallium arsenide is very mature in process and high in reliability.
As a typical implementation, as shown in fig. 1, the driver stage power amplifier unit is a driver stage power amplifier, and the transistor die is made of gaas.
For a power amplifier module with high gain and high power requirements, the number of stages of the power amplifier needs to be increased, so as to form another embodiment, the driving stage power amplifying unit includes a driving stage power amplifier and a pre-driving stage power amplifier, wherein an input end of the pre-driving stage power amplifier is connected to an output end of the input matching network, and an output end of the pre-driving stage power amplifier is connected to the input end of the driving stage power amplifier after being connected to the second inter-stage matching network. The transistor core material adopted by the pre-drive stage power amplifier is gallium arsenide, and the transistor core material adopted by the drive stage power amplifier is gallium arsenide or gallium nitride.
The output impedance of the driver-stage power amplifier or the pre-driver-stage power amplifier designed by using the gallium arsenide HBT is generally low (usually several Ω to tens of Ω), while the input impedance of the final-stage power amplifier designed by using the gallium nitride is generally low (several Ω), so that the impedance transformation ratio between the driver-stage power amplification unit and the final-stage power amplifier is relatively small, the bandwidth between the driver-stage power amplification unit and the final-stage power amplifier is relatively large, and the bandwidth is ensured.
As shown in fig. 2, the driver stage power amplifier employs gaas transistors, which are suitable for the power amplifier module with high gain requirement, and the driver stage power amplifier in fig. 3 employs gan transistors, which are suitable for the power amplifier module with high power and high gain requirement. The structures of fig. 2 and 3 both improve the bandwidth of the power amplification module and greatly reduce the cost of the module.
Generally, the first inter-stage matching network may be a low-pass filter, a high-pass filter or a band-pass filter, and the input impedance of the final power amplifier and the output impedance of the driver power amplifier are respectively provided at two ends of the first inter-stage matching network. Taking the low-pass filter shown in fig. 4 as an example, Zo is the output impedance of the power amplifier in the driving stage, Zin is the input impedance of the power amplifier in the final stage, and the matching network between the first stages adopts a pi-type low-pass network.
Fig. 5(a) shows the bandwidth of the first-stage matching network of the driver-stage power amplifier and the final-stage power amplifier, both of which are GaN dies, and fig. 5(b) shows the bandwidth of the first-stage matching network of the driver-stage power amplifier which is a gaas HBT die and the final-stage power amplifier which is a GaN die, as is obvious from comparison, the bandwidth shown in fig. 5(b) is larger than that shown in fig. 5 (a).
By combining the above analysis, the power amplifier module designed by adopting the gallium arsenide HBT and gallium nitride (GaN) mixed process has obvious advantages in cost, can obviously expand the bandwidth, and is suitable for various power amplifiers with requirements on power level and gain.
It should be noted that, in terms of process, the transistor dies of the driver stage power amplifier, the final stage driver amplifier and the pre-driver stage power amplifier may be connected to the corresponding matching networks by any one of Wire Bonding (WB), Tape Automated Bonding (TAB) and Flip Chip Bonding.
The input matching network, the output matching network, the first inter-stage matching network and the second inter-stage matching network are realized by at least one of a gallium arsenide HBT process, a gallium arsenide IPD process and a substrate patch element, and the two or more processes can be mixed to realize different matching networks in the same power amplifier module.
In some embodiments, in the power amplifier module of this embodiment, the output end of the output matching network is connected to a load impedance. As shown in fig. 1 to 3, the load impedance is 50 Ω.
The power amplifier module designed by adopting the gallium arsenide HBT and the gallium nitride GaN mixed process has obvious advantages in cost, can obviously expand the bandwidth, and is suitable for various power amplifiers with requirements on power level and gain.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (7)
1. A power amplifier module is characterized by comprising a driving stage power amplification unit and a final stage power amplifier, wherein a first inter-stage matching network is arranged between the driving stage power amplification unit and the final stage power amplifier, an input matching network is connected in front of the driving stage power amplification unit, and an output matching network is connected behind the final stage power amplifier; the transistor tube core material that the final power amplifier adopted is gallium nitride, at least one tube core material in the transistor that drive level power amplification unit adopted is gallium arsenide.
2. The power amplifier module of claim 1 wherein the driver stage power amplifier unit is a driver stage power amplifier and the transistor die is gallium arsenide.
3. The power amplifier module as claimed in claim 1, wherein the driver stage power amplifying unit includes a driver stage power amplifier and a pre-driver stage power amplifier, an input terminal of the pre-driver stage power amplifier is connected to an output terminal of the input matching network, and an output terminal of the pre-driver stage power amplifier is connected to an input terminal of the driver stage power amplifier after being connected to the second inter-stage matching network; the transistor tube core material adopted by the pre-drive level power amplifier is gallium arsenide, and the transistor tube core material adopted by the drive level power amplifier is gallium arsenide or gallium nitride.
4. The power amplifier module of claim 1, wherein the first inter-stage matching network is a low pass filter, a high pass filter or a band pass filter, and the input impedance of the final power amplifier and the output impedance of the driver power amplifier are respectively provided at two ends of the first inter-stage matching network.
5. The power amplifier module of claim 3, wherein the transistor dies of the driver stage power amplifier, the final driver amplifier and the pre-driver stage power amplifier are connected to the matching network by any one of wire bonding, tape automated bonding, and flip chip bonding.
6. The power amplifier module of claim 4 wherein the input matching network, the output matching network, the first inter-stage matching network, and the second inter-stage matching network are implemented by at least one of a gallium arsenide HBT process, a gallium arsenide IPD process, and a substrate patch element.
7. The power amplifier module of claim 1 wherein a load impedance is connected to an output of the output matching network.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210180643.3A CN114567274A (en) | 2022-02-25 | 2022-02-25 | Power amplifier module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210180643.3A CN114567274A (en) | 2022-02-25 | 2022-02-25 | Power amplifier module |
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| Publication Number | Publication Date |
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| CN114567274A true CN114567274A (en) | 2022-05-31 |
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| CN202210180643.3A Pending CN114567274A (en) | 2022-02-25 | 2022-02-25 | Power amplifier module |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8476979B1 (en) * | 2011-07-07 | 2013-07-02 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | High-efficiency power module |
| CN104883133A (en) * | 2015-06-19 | 2015-09-02 | 苏州英诺迅科技股份有限公司 | GaAs and LDMOS/GaN mixed integrated microwave amplifier based on PCB process |
| CN204836090U (en) * | 2015-06-29 | 2015-12-02 | 苏州英诺迅科技股份有限公司 | GaAs and LDMOSGaN mix integrated microwave power amplifier based on BT base plate |
| CN108023552A (en) * | 2017-11-30 | 2018-05-11 | 电子科技大学 | A kind of radio frequency power amplifier system for microwave wireless electric energy transmitting device |
| CN109995338A (en) * | 2017-12-29 | 2019-07-09 | 成都华光瑞芯微电子股份有限公司 | A kind of quasi- multi-chip power amplifier |
| CN213027965U (en) * | 2020-08-27 | 2021-04-20 | 无锡华测电子系统有限公司 | Novel ultra-wideband miniaturized power amplifier system |
| CN213817711U (en) * | 2020-11-16 | 2021-07-27 | 南京长峰航天电子科技有限公司 | Solid-state power amplifier circuit and assembly |
| CN113391272A (en) * | 2021-05-25 | 2021-09-14 | 中国电子科技集团公司第十四研究所 | W-band transmitting assembly |
-
2022
- 2022-02-25 CN CN202210180643.3A patent/CN114567274A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8476979B1 (en) * | 2011-07-07 | 2013-07-02 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | High-efficiency power module |
| CN104883133A (en) * | 2015-06-19 | 2015-09-02 | 苏州英诺迅科技股份有限公司 | GaAs and LDMOS/GaN mixed integrated microwave amplifier based on PCB process |
| CN204836090U (en) * | 2015-06-29 | 2015-12-02 | 苏州英诺迅科技股份有限公司 | GaAs and LDMOSGaN mix integrated microwave power amplifier based on BT base plate |
| CN108023552A (en) * | 2017-11-30 | 2018-05-11 | 电子科技大学 | A kind of radio frequency power amplifier system for microwave wireless electric energy transmitting device |
| CN109995338A (en) * | 2017-12-29 | 2019-07-09 | 成都华光瑞芯微电子股份有限公司 | A kind of quasi- multi-chip power amplifier |
| CN213027965U (en) * | 2020-08-27 | 2021-04-20 | 无锡华测电子系统有限公司 | Novel ultra-wideband miniaturized power amplifier system |
| CN213817711U (en) * | 2020-11-16 | 2021-07-27 | 南京长峰航天电子科技有限公司 | Solid-state power amplifier circuit and assembly |
| CN113391272A (en) * | 2021-05-25 | 2021-09-14 | 中国电子科技集团公司第十四研究所 | W-band transmitting assembly |
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Application publication date: 20220531 |