CN114563915A - Overlay mark mask-based optimization method, device and equipment - Google Patents

Overlay mark mask-based optimization method, device and equipment Download PDF

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Publication number
CN114563915A
CN114563915A CN202210085552.1A CN202210085552A CN114563915A CN 114563915 A CN114563915 A CN 114563915A CN 202210085552 A CN202210085552 A CN 202210085552A CN 114563915 A CN114563915 A CN 114563915A
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optimization
mask
optimized
preliminary
preset
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兰涛明
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Dongfang Jingyuan Electron Ltd
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Dongfang Jingyuan Electron Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/18—Manufacturability analysis or optimisation for manufacturability
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/30—Computing systems specially adapted for manufacturing

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  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
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  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

The invention relates to the technical field of photoetching, in particular to an overlay mark mask-based optimization method, which comprises the steps of obtaining a mask plate to be optimized and mark parameters of a plurality of groups of initial overlay marks of the mask plate to be optimized; performing preliminary optimization based on a preset preliminary optimization template, so that the focusing depth of the initial alignment mark on the mask to be optimized is increased to a preliminary preset standard to obtain a preliminary optimized mask; screening the preliminarily optimized mask plate based on a preset screening standard to obtain a screened mask plate; and performing secondary optimization based on a preset secondary optimization template, so that the focusing depth of the alignment mark on the secondary optimization template is improved to a secondary preset standard to obtain a secondary optimization mask. The invention also provides a device and computer equipment. The overlay mark mask-based optimization method provided by the invention solves the technical problem that a traditional mask optimization method needs a large amount of time cost.

Description

Overlay mark mask-based optimization method, device and equipment
[ technical field ] A
The invention relates to the technical field of photoetching, in particular to an optimization method based on an overlay mark mask.
[ background of the invention ]
The traditional mask optimization method is directly combined with overlay mark optimization software to be applied to screening and optimization of large-scale overlay marks, so that a large amount of computing resources are required, and the time cost of software users is increased.
[ summary of the invention ]
In order to solve the problems that the traditional mask optimization method needs a large amount of computing resources and increases the time cost of software users, the invention provides an optimization method based on overlay identification masks.
In order to solve the technical problems, the invention provides the following technical scheme: obtaining a mask plate to be optimized and identification parameters of a plurality of groups of initial alignment identifications of the mask plate; performing preliminary optimization based on a preset preliminary optimization template, so that the focusing depth of the overlay mark on at least part of the mask to be optimized is improved to a preliminary preset standard to obtain a preliminary optimized mask; screening the preliminarily optimized mask plate based on a preset screening standard to obtain a screened mask plate; and performing secondary optimization based on a preset secondary optimization template, so that the focusing depth of the alignment marks on at least part of the secondary optimization template is improved to a secondary preset standard to obtain a secondary optimization mask.
Preferably, the preliminary optimization based on the preset preliminary optimization template includes the following steps: and performing analog simulation on the mask to be optimized based on a computational lithography model and calling a preset preliminary optimization template to perform preliminary optimization on the mask to be optimized so as to improve the depth of focus of the overlay mark on the mask to be optimized to a preset standard, thereby obtaining the preliminary optimization mask and the preliminary optimization overlay mark corresponding to the preliminary optimization mask.
Preferably, the step of screening the preliminarily optimized mask to obtain the screened mask comprises the following steps: and screening the preliminary optimized overlay mark based on a preset screening standard to obtain a screened preliminary optimized overlay mark and a corresponding screened preliminary optimized mask plate.
Preferably, screening the preliminarily optimized reticle comprises the following steps: calculating to obtain manufacturability information and matching information of each group of the preliminary optimization overlay marks on the preliminary optimization mask plate through a preset calculation model based on the preliminary optimization mask plate; and comparing the manufacturability information and the matching information of each group of the preliminary optimization overlay marks with preset standards to obtain screened mask plates and screened overlay marks which match the screening standards.
Preferably, the second optimization of the screened mask plate based on the preset second optimization template comprises the following steps: and performing analog simulation on the screened primary optimized mask plate based on a computational lithography model, and calling a preset secondary optimization template to perform secondary optimization on the screened primary optimized mask plate so as to improve the depth of focus of the overlay marks on the screened primary optimized mask plate to a secondary preset standard to obtain a secondary optimized mask plate.
Preferably, the depth of focus of the at least partially preliminary optimized overlay mark is increased by 30-80% compared to the depth of focus of the initial overlay mark.
Preferably, the number of iterations of the preliminary optimization ranges from 100 to 200.
Preferably, the depth of focus of the overlay mark on the at least partially secondarily optimized reticle is increased by 40% -90% compared with the depth of focus of the initial overlay mark.
Preferably, the iteration number of the secondary optimization is in the range of 200-400.
In order to solve the above technical problems, the present invention provides another technical solution as follows: an apparatus for implementing the above method, comprising: the mask optimizing system comprises an input module, a primary optimizing module, a screening module and a secondary optimizing module, wherein the input module is used for acquiring mask plates to be optimized and identification parameters of a plurality of groups of initial alignment marks of the mask plates to be optimized, the primary optimizing module is used for primarily optimizing the mask plates to be optimized, the screening module is used for screening the primarily optimized mask plates, and the secondary optimizing module is used for optimizing the primarily optimized mask plates.
In order to solve the above technical problems, the present invention provides another technical solution as follows: a computer device comprising a memory, a processor and a computer program stored on the memory, the processor executing the computer program to implement the above method.
Compared with the prior art, the overlay mark mask-based optimization method, device and equipment provided by the invention have the following beneficial effects:
1. acquiring identification parameters of a plurality of groups of initial alignment identifications; obtaining a corresponding mask plate to be optimized according to the identification parameters; preliminarily optimizing the mask to be optimized based on a preset preliminary optimization template, so that the focusing depth of the overlay mark on the mask to be optimized is increased to a preliminary preset standard to obtain the preliminary optimization mask; screening the preliminarily optimized mask plate based on a preset screening standard to obtain a screened mask plate; and carrying out secondary optimization on the screened mask plate based on a preset secondary optimization template, so that the focusing depth of the alignment mark on the secondary optimization template is improved to a secondary preset standard to obtain the secondary optimization mask plate. The mask plate to be optimized is preliminarily optimized, the focusing depth of the overlay marks in the parameter range on the template to be optimized is improved to a certain level, and then the mask after preliminary optimization is screened, so that repeated optimization of a plurality of overlay marks which do not meet the requirements in secondary optimization is avoided, computing resources are wasted, and optimization time is prolonged.
2. And performing analog simulation on each mask to be optimized based on the computational lithography model and calling a preset preliminary optimization template to perform preliminary optimization on the mask to be optimized so as to improve the depth of focus of the overlay mark on the mask to be optimized to a preset standard and obtain the preliminary optimization mask and a preliminary optimization overlay mark corresponding to the preliminary optimization mask. The loading calculation photoetching simulates the actual photoetching process, and the reliability of the primary optimization process is improved.
3. The method for screening the preliminarily optimized mask plate to obtain the screened mask plate comprises the following steps: screening the preliminary optimized overlay mark based on a preset screening standard to obtain a screened preliminary optimized overlay mark; and obtaining the screened primarily optimized mask plate corresponding to the screened primarily optimized overlay mark according to the screened primarily optimized overlay mark. By analyzing the manufacturability and the matching performance of the overlay mark, the operation flow is reduced, and the simulation output result is optimized.
4. The depth of focus of the preliminary optimization overlay mark is improved by 30% -80% compared with the depth of focus before preliminary optimization. The focusing depth is improved to a preset standard, and screening is facilitated.
5. The number of iterations of the initial optimization ranges from 100 to 200. For low-precision optimization, screening is carried out after the focusing depth of the overlay mark meets the standard, the low-precision optimization time is short, and computer resources occupied during screening and the screening time can be greatly reduced.
6. Compared with the depth of focus of the overlay mark on the mask to be optimized, the depth of focus of the overlay mark on the secondary optimization mask is improved by 40-90%, and the iteration number range of the secondary optimization is 200-400 times. The secondary optimization is embodied as high-precision optimization from the aspects of the promotion of the depth of focus and the number of iterations, and the high-precision optimization is carried out on a relatively small number of screened overlay marks on the mask plate, so that the use requirements can be better met.
7. The number of the masks to be optimized is one or more, and the number of the primary optimized masks and the secondary optimized masks corresponds to the number of the masks to be optimized. When the number of the overlay marks is large, the overlay marks are respectively arranged on a plurality of mask plates, so that optimization can be conveniently carried out.
8. The embodiment of the invention also provides a device for realizing the method, which has the same beneficial effects as the optimization method based on the overlay mark mask, and the detailed description is omitted here.
9. The embodiment of the present invention further provides a computer device, which has the same beneficial effects as the above optimization method based on the overlay mark mask, and details are not repeated herein.
[ description of the drawings ]
Fig. 1 is a flowchart of an optimization method based on overlay mark masks according to a first embodiment of the present invention.
Fig. 2 is a schematic diagram of a mark segmentation type according to a first embodiment of the present invention.
Fig. 3 is a graph of overlay mark depth of focus as a function of mask optimization iterations according to a first embodiment of the present invention.
Fig. 4 is a schematic diagram of a vertical slicing type DBO mark according to a first embodiment of the present invention.
Fig. 5 is an overlay mark information diagram with optimal overall performance provided by the first embodiment of the invention.
Fig. 6 is a comparison of focus depth before and after mask optimization provided by the first embodiment of the present invention.
Fig. 7 is a schematic structural diagram of an apparatus according to a second embodiment of the present invention.
Fig. 8 is a schematic structural diagram of a computer device according to a third embodiment of the present invention.
The attached drawings indicate the following:
1. an optimization method based on an overlay mark mask; 2. a device; 3. a computer device;
21. an input module; 23. a preliminary optimization module; 24. a screening module; 25. a secondary optimization module; 30. a memory; 31. a processor.
[ detailed description ] embodiments
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
For ease of understanding, the optimization of the mask is first described here: in the semiconductor device manufacturing process, the overlay error is one of the key indexes for monitoring the alignment of the photoetching process, and the optimization and the screening of the overlay mark mask are the key steps for reducing the overlay error. A standard mask optimization process usually includes several HMO (hybrid mask optimization), GMO (global mask optimization), LMO (local mask optimization) flows, each of which includes several tens of iterative computations; meanwhile, script commands with different parameters are set for optimizing the graphs with different shapes and sizes. If applied to screening and optimization of large scale overlay marks by such conventional mask optimization schemes, would require significant computational resources and time costs.
Referring to fig. 1, a first embodiment of the present invention provides an optimization method 1 based on overlay mark masks, including the following steps:
step 11, obtaining a mask to be optimized and identification parameters of a plurality of groups of initial alignment marks of the mask to be optimized;
step 12, performing preliminary optimization based on a preset preliminary optimization template, so that the focusing depth of the overlay mark on the mask to be optimized is increased to a preliminary preset standard to obtain a preliminary optimization mask;
step 13, screening the preliminarily optimized mask plate based on a preset screening standard to obtain a screened mask plate;
and 14, performing secondary optimization based on a preset secondary optimization template, so that the focusing depth of the alignment mark on the secondary optimization template is increased to a secondary preset standard to obtain a secondary optimization mask.
The mask plate to be optimized is preliminarily optimized, the focusing depth of the overlay marks in the parameter range of the mask plate to be optimized is increased to a certain level, and then the mask plate after preliminary optimization is screened, so that the repeated optimization of a plurality of overlay marks which do not meet the requirements in the secondary optimization is avoided, the calculation resources are wasted, and the optimization time is prolonged.
It is understood that optimizing the reticle means achieving an optimization of the mask as a whole by increasing the depth of focus of the overlay marks on the reticle.
Specifically, the identification parameters of the overlay identification include a Period (PITCH), a Critical Dimension (CD), a length (SPAN), and the like; segmentation parameters: the segmentation type and the corresponding segmentation Number (NUM), duty ratio (SR), Aspect Ratio (AR) and the like.
For example, referring to fig. 2, after the identification parameters are input, the identification may be sliced according to the size requirements of different identifications, and the slicing types include BasicLS, ParalST _ p (n), VertST _ p (n), and 2DST _ p (n).
Further, the preliminary optimization of the mask plate to be optimized based on a preset preliminary optimization template comprises the following steps:
step 120, inputting a mask to be optimized;
and 121, performing analog simulation on each mask to be optimized based on a computational lithography model and calling a preset initial optimization template to perform initial optimization on the mask to be optimized so as to improve the depth of focus of the overlay mark on the mask to be optimized to a preset standard, thereby obtaining an initial optimization mask and an initial optimization overlay mark corresponding to the initial optimization mask. The loading calculation photoetching simulates the actual photoetching process, and the reliability of the primary optimization process is improved.
It can be understood that the calculation of the lithography model can simulate the lithography physical process, and various parameters of the calculation of the lithography model are calibrated according to the requirements of the lithography machine and the lithography process.
Complex optimization rules generally imply higher correction accuracy, while also requiring more software runtime and computational resources.
Referring to fig. 3, as the complexity of the optimization rule increases, the increase of the focus depth of the overlay mark to be optimized gradually approaches to the limit, and only a simple optimization rule is needed to increase the focus depth of the mark to the preset standard, so that the mark can be used without causing risk to production. The preliminary optimization is to preliminarily optimize the template according to the preliminary optimization template, load a calculation photoetching model to simulate the actual photoetching process, and adjust the parameters of the overlay mark on the mask to be optimized so that the focusing depth of the overlay mark reaches the preset standard. The preset criteria for depth of focus may be a fixed value and/or range, or may be custom edited as desired prior to preliminary optimization.
Preferably, the screening of the preliminarily optimized reticle based on a preset screening criterion comprises the following steps:
step 130: screening the preliminary optimized overlay mark based on a preset screening standard to obtain a screened preliminary optimized overlay mark and a corresponding screened preliminary optimized mask plate;
preferably, screening the preliminarily optimized reticle based on a preset screening criterion comprises the following steps:
step 1300: calculating to obtain manufacturability information and matching property information of each group of the preliminary optimization overlay marks on the preliminary optimization mask plate through a preset calculation model based on the preliminary optimization mask plate
Step 1301: and obtaining a screened preliminary optimized mask plate corresponding to the screened preliminary optimized overlay mark according to the screened preliminary optimized overlay mark.
By analyzing the manufacturability and the matching of the overlay mark, the complicated operation flow is reduced, and the simulation output result is optimized.
Preferably, the preliminary optimization increases the depth of focus of the overlay marks on the reticle to be optimized by 30-80% compared to before optimization.
Preferably, the number of iterations of the preliminary optimization ranges from 100 to 200.
It can be understood that the preliminary optimization is low-precision optimization, and the purpose of the preliminary optimization is to increase the depth of focus of the overlay mark on the mask to be optimized to a level that meets the use requirement with a shorter time and fewer iterations, at this time, although the depth of focus of the overlay mark already meets the use requirement, in the actual production process, in order to ensure the manufacturability of the overlay mark on the mask, the high-precision optimization is required, and other performances of the overlay mark are also required to be analyzed. Therefore, after low-precision optimization with low cost is carried out, the overlay mark on the initially optimized mask is screened, the overlay mark which does not accord with the preset standard on the mask is screened out, namely the overlay mark which does not need to participate in high-precision optimization is not needed, and therefore the cost in the high-precision optimization process is saved.
Preferably, the depth of focus of the alignment mark of the mask to be optimized is improved by 40-90% in the second optimization compared with that before the optimization.
Preferably, the number of iterations of the second optimization is in the range of 200-400.
Compared with the primary optimization, the secondary optimization is high-precision optimization, and the screened relatively few overlay marks on the mask plate are subjected to high-precision optimization, so that the use requirements can be better met.
Preferably, the number of the reticles to be optimized is one or more, and the number of the primary optimized reticles and the secondary optimized reticles corresponds to the number of the reticles to be optimized. When the number of the overlay marks is large, the overlay marks are respectively arranged on a plurality of mask plates, so that optimization can be conveniently carried out.
Illustratively, in the embodiment, a vertical splitting type DBO mark as shown in fig. 4 is adopted, and the alignment mark period to be optimized (PITCH) is 800 nm; the critical line width (CD) range is 200-500nm, and the step size is 2 nm; total length of 10um (SPAN); the slice unit duty cycle (SR) is 1 and the Aspect Ratio (AR) is 3. Drawing a mask plate to be optimized containing all overlay mark parameters to be optimized by using a layout editing tool;
importing a mask plate to be optimized containing all overlay mark parameters to be optimized, loading a computational lithography model, calling a preliminary optimization template, setting the number of optimization iterations to be 150, and performing preliminary optimization to obtain the preliminary optimization mask plate and a preliminary optimization overlay mark corresponding to the preliminary optimization mask plate;
screening the preliminarily optimized mask plate based on preset standards, loading a computational lithography model, selecting manufacturability and matching simulation conditions and screening conditions at the same time, implementing overlay mark optimization to obtain the screened mask plate, and outputting five overlay mark variable information with optimal comprehensive performance as shown in FIG. 5;
and taking the screened mask as input, loading a computational lithography model, calling a secondary optimization template, optimizing the iteration times to 300 times, and implementing a secondary mask optimization process.
Outputting the masks of the overlay marks after screening and mask optimization, and deriving the focusing depth comparison results before and after optimization of the five overlay mark masks with the highest comprehensive performance for explaining the effect of the optimization method based on the overlay mark masks, as shown in fig. 6.
Referring to fig. 7, a device 2 for implementing the method 1 according to the second embodiment of the present invention is further provided, where the device 2 includes an input module 21 for obtaining identification parameters of a plurality of sets of initial overlay identifications, a primary optimization module 23 for primarily optimizing a reticle to be optimized, a screening module 24 for screening a primarily optimized reticle, and a secondary optimization module 25 for optimizing the primarily optimized reticle.
Referring to fig. 8, a computer device 3 according to a third embodiment of the present invention includes a memory, a processor and a computer program stored in the memory, wherein the processor executes the computer program to implement the method 1.
In the embodiments provided herein, it should be understood that "B corresponding to a" means that B is associated with a from which B can be determined. It should also be understood that determining B from a does not mean determining B from a alone, but may also be determined from a and/or other information.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. Those skilled in the art should also appreciate that the embodiments described in this specification are exemplary and alternative embodiments, and that the acts and modules illustrated are not required in order to practice the invention.
In various embodiments of the present invention, it should be understood that the sequence numbers of the above-mentioned processes do not imply an inevitable order of execution, and the execution order of the processes should be determined by their functions and inherent logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.
The flowchart and block diagrams in the figures of the present application illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will be understood that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
Compared with the prior art, the overlay mark mask-based optimization method, device and equipment provided by the invention have the following beneficial effects:
1. acquiring identification parameters of a plurality of groups of initial alignment identifications; obtaining a corresponding mask plate to be optimized according to the identification parameters; preliminarily optimizing the mask to be optimized based on a preset preliminary optimization template, so that the focusing depth of the overlay mark on the mask to be optimized is increased to a preliminary preset standard to obtain the preliminary optimization mask; screening the preliminarily optimized mask plate based on a preset screening standard to obtain a screened mask plate; and carrying out secondary optimization on the screened mask plate based on a preset secondary optimization template, so that the focusing depth of the alignment mark on the secondary optimization template is improved to a secondary preset standard to obtain the secondary optimization mask plate. The mask plate to be optimized is preliminarily optimized, the focusing depth of the overlay marks in the parameter range on the template to be optimized is improved to a certain level, and then the mask after preliminary optimization is screened, so that repeated optimization of a plurality of overlay marks which do not meet the requirements in secondary optimization is avoided, computing resources are wasted, and optimization time is prolonged.
2. And performing analog simulation on each mask to be optimized based on the computational lithography model and calling a preset preliminary optimization template to perform preliminary optimization on the mask to be optimized so as to improve the depth of focus of the overlay mark on the mask to be optimized to a preset standard and obtain the preliminary optimization mask and a preliminary optimization overlay mark corresponding to the preliminary optimization mask. The loading calculation photoetching simulates the actual photoetching process, and the reliability of the primary optimization process is improved.
3. The method for screening the preliminarily optimized mask plate to obtain the screened mask plate comprises the following steps: screening the preliminary optimized overlay mark based on a preset screening standard to obtain a screened preliminary optimized overlay mark; and obtaining the screened primarily optimized mask plate corresponding to the screened primarily optimized overlay mark according to the screened primarily optimized overlay mark. By analyzing the manufacturability and the matching performance of the overlay mark, the operation flow is reduced, and the simulation output result is optimized.
4. The depth of focus of the preliminary optimization overlay mark is improved by 30% -80% compared with the depth of focus before preliminary optimization. The focusing depth is improved to a preset standard, and screening is facilitated.
5. The number of iterations of the initial optimization is in the range of 100-200. For low-precision optimization, screening is carried out after the focusing depth of the overlay mark meets the standard, the low-precision optimization time is short, and computer resources occupied during screening and the screening time can be greatly reduced.
6. Compared with the depth of focus of the overlay mark on the mask to be optimized, the depth of focus of the overlay mark on the twice-optimized mask is improved by 40% -90%, and the iteration frequency range of the twice optimization is 200-400 times. The secondary optimization is embodied as high-precision optimization from the aspects of the promotion of the depth of focus and the number of iterations, and the high-precision optimization is carried out on a relatively small number of screened overlay marks on the mask plate, so that the use requirements can be better met.
7. The number of the mask plates to be optimized is one or more, and the number of the primary optimized mask plates and the number of the secondary optimized mask plates correspond to the number of the mask plates to be optimized. When the number of the overlay marks is large, the overlay marks are respectively arranged on a plurality of mask plates, so that optimization can be conveniently carried out.
8. The embodiment of the invention also provides a device for realizing the method, which has the same beneficial effects as the optimization method based on the overlay mark mask, and the detailed description is omitted here.
9. The embodiment of the present invention further provides a computer device, which has the same beneficial effects as the above optimization method based on the overlay mark mask, and details are not repeated herein.
The detailed description of the method, the apparatus, the device, the readable storage medium and the program product for optimizing the mask based on overlay mark disclosed in the embodiments of the present invention is provided, and the specific examples are applied herein to explain the principle and the implementation of the present invention, and the description of the embodiments is only used to help understanding the method and the core idea of the present invention; meanwhile, for the persons skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present description should not be construed as a limitation to the present invention, and any modification, equivalent replacement, and improvement made within the principle of the present invention should be included in the protection scope of the present invention.

Claims (11)

1. An optimization method based on overlay mark mask is characterized in that: the method comprises the following steps:
obtaining a mask plate to be optimized and identification parameters of a plurality of groups of initial alignment marks of the mask plate to be optimized;
performing preliminary optimization based on a preset preliminary optimization template, so that the focusing depth of the initial alignment mark on the mask to be optimized is increased to a preliminary preset standard to obtain a preliminary optimized mask;
screening the preliminarily optimized mask plate based on a preset screening standard to obtain a screened mask plate;
and performing secondary optimization based on a preset secondary optimization template, so that the depth of focus of the overlay mark on the secondary optimization template is increased to a secondary preset standard to obtain a secondary optimization mask.
2. The method of claim 1, wherein: the preliminary optimization based on the preset preliminary optimization template comprises the following steps:
and performing analog simulation on the mask to be optimized based on a computational lithography model and calling a preset preliminary optimization template to perform preliminary optimization on the mask to be optimized so as to improve the depth of focus of the overlay mark on the mask to be optimized to a preset standard, thereby obtaining the preliminary optimization mask and the preliminary optimization overlay mark corresponding to the preliminary optimization mask.
3. The method of claim 2, wherein: the step of screening the preliminarily optimized mask to obtain the screened mask comprises the following steps:
and screening the preliminary optimized overlay mark based on a preset screening standard to obtain a screened preliminary optimized overlay mark and a corresponding screened preliminary optimized mask plate.
4. The method of claim 3, wherein:
screening the preliminary optimized mask plate comprises the following steps:
calculating to obtain manufacturability information and matching information of each group of the preliminary optimization overlay marks on the preliminary optimization mask plate through a preset calculation model based on the preliminary optimization mask plate;
and comparing the manufacturability information and the matching information of each group of the preliminary optimization overlay marks with preset standards to obtain screened mask plates and screened overlay marks which match the screening standards.
5. The method of claim 3, wherein:
the secondary optimization of the screened mask plate based on the preset secondary optimization template comprises the following steps:
and performing analog simulation on each screened preliminary optimized mask plate based on a computational lithography model, calling a preset secondary optimization template to perform secondary optimization on the screened preliminary optimized mask plate, so as to improve the depth of focus of the overlay marks on the screened preliminary optimized mask plate to a secondary preset standard, and thus obtaining a secondary optimized mask plate.
6. The method of claim 3, wherein: the depth of focus of the preliminary optimized overlay mark is increased by 30% -80% compared to the depth of focus of the initial overlay mark.
7. The method of claim 2, wherein: the number of iterations of the preliminary optimization ranges from 100 to 200.
8. The method of claim 1, wherein: the depth of focus of the overlay mark on the secondary optimized mask is improved by 40% -90% compared with that of the initial overlay mark.
9. The method of claim 1, wherein: the iteration number range of the secondary optimization is 200-400.
10. An apparatus for implementing the method of claim 1, wherein: the method comprises the following steps:
the mask optimization system comprises an input module, a primary optimization module, a screening module and a secondary optimization module, wherein the input module is used for acquiring mask plates to be optimized and identification parameters of a plurality of groups of initial alignment marks of the mask plates to be optimized, the primary optimization module is used for primarily optimizing the mask plates to be optimized, the screening module is used for screening the primarily optimized mask plates, and the secondary optimization module is used for optimizing the primarily optimized mask plates.
11. A computer device, characterized by: comprising a memory, a processor and a computer program stored on the memory, the processor executing the computer program to implement the method of claim 1.
CN202210085552.1A 2022-01-25 2022-01-25 Overlay mark mask-based optimization method, device and equipment Pending CN114563915A (en)

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