CN114551651A - Manufacturing method of display panel, display panel and display device - Google Patents

Manufacturing method of display panel, display panel and display device Download PDF

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Publication number
CN114551651A
CN114551651A CN202011341608.2A CN202011341608A CN114551651A CN 114551651 A CN114551651 A CN 114551651A CN 202011341608 A CN202011341608 A CN 202011341608A CN 114551651 A CN114551651 A CN 114551651A
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emitting diode
light
light emitting
display panel
chips
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范春林
张扬
汪庆
王斌
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

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  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
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Abstract

The invention relates to a manufacturing method of a display panel, the display panel and a display device. The test data of the LED chips on the wafer are detected, the LED chips are classified and bound according to the test data, the characteristic that the test data of the LED chips of the same type are similar is utilized, the performance waste of the LED during application can be greatly reduced, the loss of the luminous performance caused by optical parameter compensation can be reduced or even cancelled, and the yield of the manufactured display device is greatly improved.

Description

Manufacturing method of display panel, display panel and display device
Technical Field
The invention relates to the field of semiconductor devices, in particular to a manufacturing method of a display panel, the display panel and a display device.
Background
Micro Light Emitting diodes (Micro-LEDs) are a new generation of display technology, and have higher photoelectric efficiency, higher brightness, higher contrast and lower power consumption compared with liquid crystal display in the related art, and can realize flexible display by combining with a flexible panel. In the existing micro light-emitting diode, the problem that the color of the picture is not uniform is always difficult to solve, and the problem can cause the problem that the brightness and the color are not uniform after the point screen is displayed, and the fundamental reason is that the light-emitting wavelength and the brightness of each small light-emitting chip are not uniform.
Therefore, how to fully utilize the performance of the led chip and reduce the waste of the light emitting performance is a problem that needs to be solved.
Disclosure of Invention
In view of the above-mentioned shortcomings of the related art, the present invention aims to provide a method for manufacturing a display panel, a display panel and a display device, which aims to solve the problems of poor utilization of the performance of the light emitting diode and much waste of the light emitting performance in the related art.
A manufacturing method of a display panel comprises the following steps:
providing a wafer; wherein, a plurality of light emitting diode chips are arranged on the wafer;
performing photoelectric detection on each light emitting diode chip to determine test data of each light emitting diode chip;
selectively stripping the chips with the test data close to each other in each light emitting diode chip;
and binding the stripped light-emitting diode chip to a driving back plate.
According to the manufacturing method of the display panel, the LED chips on the wafer are detected according to the test data, the LED chips are classified and bound according to the test data, the characteristic that the test data of the similar LED chips are similar is utilized, the performance waste of the LED during application can be greatly reduced, the loss of the luminous performance caused by optical parameter compensation can be reduced or even cancelled, and the yield of the manufactured display device is greatly improved.
Optionally, the step of performing photoelectric detection on each of the light emitting diode chips includes:
performing photoelectric detection on each of the light emitting diode chips by a photoluminescence detection technique or an electroluminescence detection technique.
Optionally, the test data comprises luminescence intensity and/or luminescence wavelength.
Optionally, the method further includes:
and classifying the light-emitting diode chips according to the luminous intensity and/or the luminous wavelength.
Optionally, the test data is in the same category including the proximity of the emission intensity and/or emission wavelength.
Optionally, the classifying the light emitting diode chips according to the light emitting intensity and/or the light emitting wavelength includes:
dividing the light-emitting diodes into at least three types according to the luminous intensity of the light-emitting diode chips; wherein a class of light emitting diode chips exists that have a luminous intensity of zero candela.
Optionally, the classifying the light emitting diode chips according to the light emitting intensity and/or the light emitting wavelength includes:
the light emitting diodes are divided into at least two types according to the light emitting wavelength of each light emitting diode chip.
Optionally, the classifying the light emitting diode chips according to the light emitting intensity and/or the light emitting wavelength includes:
dividing the light-emitting diodes into at least three types according to the luminous intensity of the light-emitting diode chips; wherein the luminous intensity of the LED chip is zero candela;
and classifying the light-emitting diode chips after the light-emitting intensity classification into at least two types according to the light-emitting wavelength of each light-emitting diode chip.
Optionally, the method further includes:
replacing the light emitting diode chip with the luminous intensity of zero candela; or
And removing the light-emitting diode chip with the luminous intensity of zero candela.
Optionally, the method further includes:
and performing optical parameter compensation on each LED chip bound to the driving backboard.
Based on the same inventive concept, the invention also provides a display panel, and the display panel is manufactured by adopting the manufacturing method of the display panel in the embodiment of the invention.
The display panel is manufactured by the manufacturing method of the display panel, so that the display panel has a more uniform light-emitting effect, and the utilization rate of the light-emitting performance of each light-emitting diode chip is high.
Based on the same inventive concept, the invention also provides a display device, which comprises the display panel.
The display device comprises the display panel, so that the display effect of the display device is more uniform, and the utilization rate of the light emitting performance of each light emitting diode chip is high.
Drawings
Fig. 1 is a schematic flow chart illustrating a manufacturing method of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic view of a wafer according to an embodiment of the present invention;
fig. 3a is a schematic view of a red light wafer according to an embodiment of the invention;
FIG. 3b is a schematic diagram of a red light wafer brightness test data according to an embodiment of the present invention;
FIG. 3c is a schematic diagram of wavelength test data of a red light wafer according to an embodiment of the present invention;
FIG. 4a is a schematic diagram of a green wafer according to an embodiment of the present invention;
FIG. 4b is a schematic diagram of green wafer brightness test data according to an embodiment of the present invention;
FIG. 4c is a schematic diagram of wavelength test data of a green wafer according to an embodiment of the present invention;
FIG. 5a is a schematic view of a blue-ray wafer according to an embodiment of the present invention;
FIG. 5b is a schematic diagram of data of a blue-ray wafer brightness test according to an embodiment of the present invention;
FIG. 5c is a schematic diagram of blue light wafer wavelength test data according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a photoluminescence detection device provided by an embodiment of the invention;
fig. 7a is a schematic view illustrating a display effect of led chips in a red light wafer according to an embodiment of the present invention;
fig. 7b is a schematic diagram illustrating a display effect of led chips in a green wafer according to an embodiment of the present invention;
fig. 7c is a schematic view illustrating a display effect of the led chip in the blue light wafer according to the embodiment of the invention;
FIG. 7d is a schematic diagram of a display panel under the same category according to an embodiment of the present invention;
FIG. 7e is a schematic diagram of another display panel under the same category according to the embodiment of the present invention;
fig. 8 is a schematic diagram illustrating a chip processing apparatus according to an embodiment of the present invention.
Description of reference numerals:
31-image detection device, 32-optical filter, 33-laser emitter, 34-computer equipment, 35-wafer, 41-processor, 42-memory, 43-communication bus.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
In the existing scheme, the effect of optical parameter compensation (De-mura) is achieved by modulating the brightness of a single chip, but the brightness of a plurality of chips with better quality is lost to be compatible with the brightness of a poorer chip, so that the display image quality of the micro light-emitting diode is limited and reduced; for example: in the display screen, if 50% of the led chips have a display luminance of 90, 30% of the led chips have a display luminance of 60, and 20% of the led chips have a display luminance of 50, the overall luminance needs to be adjusted to about 65 for the display effect, which results in a reduction in the display image quality and sacrifices the performance of the led chips having a display luminance of 90.
Based on this, the present invention intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
According to the manufacturing method of the display panel, the test data of the light emitting diode chips on the wafers are detected, the light emitting diode chips are classified and bound according to the test data, the characteristic that the test data of the light emitting diode chips of the same type are similar is utilized, the performance waste of the light emitting diodes during application can be greatly reduced, the light emitting performance loss caused by optical parameter compensation can be reduced or even eliminated, and the yield of the manufactured display device is greatly improved. For easy understanding, in the present embodiment, the following description is made by taking the manufacturing method of the display panel shown in fig. 1 as an example, which is easy to understand:
referring to fig. 1, the manufacturing method of the display panel includes, but is not limited to:
s101, providing a wafer; wherein, a plurality of light emitting diode chips are arranged on the wafer;
s102, performing photoelectric detection on each light-emitting diode chip to determine test data of each light-emitting diode chip;
s103, selectively stripping chips with close test data in each light-emitting diode chip;
and S104, binding the stripped light-emitting diode chip to a driving backboard.
The manufacturing method of the display panel in the embodiment of the invention mainly classifies the light emitting diode chips on the wafer into one type, so that when the display device is formed, the light emitting efficiency of the light emitting diodes with similar properties is similar, the problem of uneven brightness and color is slight, a more integrated display effect can be achieved, the flow of optical parameter compensation (De-mura) can be reduced or even avoided, and the performance loss of the light emitting diode chips is reduced.
In S101, a wafer (chip on wafer, COW) is prepared; and a plurality of light emitting diode chips to be stripped are arranged on each wafer. The wafer is the core part of the light emitting diode, and in fact, the main photoelectric parameters of the light emitting diode, such as wavelength, brightness, forward voltage, and the like, basically depend on the wafer material. The processing and fabrication of the relevant circuit elements of the led are generally completed on a wafer. The wafer is diced to obtain hundreds or even thousands of led chips, referring to fig. 2, fig. 2 is a whole wafer, wherein each small square represents an led chip. At this time, the led chips on the wafer are not peeled off.
Although the display effects of the led chips on the same wafer are relatively close, it is not excluded that the display effects may have a larger difference. Therefore, a plurality of wafers, each having a plurality of led chips to be peeled off, may be prepared and processed for all of the wafers. The number of wafers provided in the embodiments of the present invention is not limited, and at least one wafer or more wafers may be provided during the processing.
Because the led chips have different colors, the display device can achieve different color display effects by using three primary colors, red, green, and blue, according to the composition of the three primary colors. The manufacturing method of the light emitting diode chips with different colors can be that a red light emitting diode chip, a green light emitting diode chip and a blue light emitting diode chip are directly manufactured, or a blue light emitting diode chip is manufactured, and then a fluorescent layer is covered on the blue light emitting diode chip to prepare the red light emitting diode chip and the green light emitting diode chip. In any of the manufacturing methods, in order to achieve a color display effect, the three-color led chip is indispensable for practical display device applications.
In S102, photoelectric detection is performed on each led chip to determine test data of each led chip. The led chips are tested in order to determine the optical properties of the individual led chips, i.e. their test data. The test data is determined to classify the light emitting diode chips, the test data is similar to each other to serve as a class, and the light emitting diode chips of the same class can be applied as a whole, so that the uneven display degree can be reduced. Referring to fig. 3a to 3c, fig. 4a to 4c, and fig. 5a to 5c, respectively, the test data obtained by the photoelectric detection of the led chips of each color in the tricolor wafer is shown; FIGS. 3a to 3c are waveform diagrams of the brightness and wavelength of the LED chip in the red light wafer frame; FIGS. 4 a-4 c are waveform diagrams showing the brightness and wavelength of the LED chip in the green wafer frame; fig. 5a to 5c are waveform diagrams showing the luminance and wavelength of the led chip in the blue light wafer frame.
In some embodiments, performing photoelectric detection on each led chip may specifically include:
the photoelectric detection is performed on each light emitting diode chip by a photoluminescence detection technique or an electroluminescence detection technique.
Among them, the photoluminescence detection technology (LPL) is a phenomenon that an object is irradiated by an external light source to obtain energy and generate excitation to emit light. The photoluminescence phenomenon can be generated by exciting the luminescent material with ultraviolet light, visible light or infrared light. Photoluminescence comprises three main stages of absorption, energy transfer and light emission, can provide information about the structure, components and environmental atomic arrangement of materials, and is a nondestructive and high-sensitivity analysis method.
An apparatus implementing the photoluminescence detection technique is called a photoluminescence detection apparatus, and as shown in fig. 6, the photoluminescence detection apparatus may include:
an image detection device 31(CCD) for acquiring image data of the wafer 35;
the optical filter 32 is located between the image detection device 31 and the wafer 35 and is used for filtering stray light;
a laser transmitter 33 for generating laser light;
and the computer device 34 is configured to receive the image data transmitted by the image detection device 31 and determine test data of each led chip on the wafer 35 according to the image data.
In some embodiments, the detecting the led chips on the wafer and determining the test data of the led chips may specifically include: the luminous intensity and/or the luminous wavelength of the light-emitting diode chip. In order to ensure the consistency of the display effect of the light-emitting diode chips of the same type during application and avoid or reduce optical parameter compensation, the test data can be directly set as the luminous intensity and/or the luminous wavelength. That is, the light emitting diode chips are classified according to the emission intensity and/or the emission wavelength in the present embodiment. When the light emitting diode chips with the same or similar light emitting intensity and light emitting wavelength are used as a class, the display effect can be very close to that of the light emitting diode chips.
In S103, chips with close test data in each of the light emitting diode chips are selectively peeled off. Selective peeling means that chips with close test data are peeled together under the condition of using the test data of the light emitting diode chips, and chips with larger difference of the test data are peeled separately. That is, the light emitting diode chips may be classified according to the light emitting intensity and/or the light emitting wavelength, and the classification reference is the test data of the light emitting diodes detected in S102. The classification aims to divide the LED chips with the same or similar test data together, and can present a more uniform display effect when in application. The specific test data referred to in the classification may be the light emitting intensity and/or the light emitting wavelength of each light emitting diode chip. The test data may specifically include that the emission intensities and/or the emission wavelengths are in the same category, that is, the difference between the emission intensities of the light emitting diode chips in the same category is smaller than or equal to a preset threshold, and/or the difference between the emission wavelengths thereof is smaller than or equal to a preset threshold. Referring to fig. 7a to 7e, in which fig. 7a shows schematic diagrams of display effects of the led chips in the red wafer, where a symbol "1" indicates that the test data is close, a symbol "a" indicates that the test data is close, and fig. 7b and 7c show schematic diagrams of display effects of the led chips in the green wafer and the blue wafer, respectively, where a symbol "2" indicates that the test data is close, a symbol "b" indicates that the test data is close, a symbol "3" indicates that the test data is close, a symbol "c" indicates that the test data is close, and the test data of the three-color led chips indicated by "1", "2" and "3" are also close, and the test data of the three-color led chips indicated by "a", "b" and "c" are also close; fig. 7d and 7e show that the three-color led chips with similar test data are classified into a type according to the same grade and then applied to the display panel.
In some embodiments, the classifying the light emitting diode chips according to the light emitting intensity and/or the light emitting wavelength may specifically include:
according to the luminous intensity of each LED chip, dividing each LED into at least three types; wherein a class of light emitting diode chips exists that have a luminous intensity of zero candela. Since the led chips have different colors, the colors are required to be applied when the led chips are applied, and the led chips with different colors have different display effects, that is, the general luminous intensities of the led chips are different, generally speaking, the blue led chip has the highest luminous intensity, the green led chip has the next highest luminous intensity, and the red led chip has the lowest luminous intensity. Therefore, for the light emitting diode chips of different colors, the test data thereof should be determined separately for classification. That is, blue light emitting diode chips with the same or similar luminous intensities are classified into one type, green light emitting diode chips with the same or similar luminous intensities are classified into one type, red light emitting diode chips with the same or adjacent luminous intensities are classified into one type, and light emitting diode chips of different colors are separately classified.
When classified according to the luminous intensity, the classification is made into at least three categories, the weakest, i.e., non-emitting, light-emitting diode chip having a luminous intensity of zero candela. An exemplary classification may be:
the first level of the range of luminous intensity may be: 8000-10000cd/m2；
The second level of luminous intensity range may be: 2000 to 8000cd/m2；
The third level is no light emission, so naturally, the detected light emission intensity of the light emitting diode chip is zero. The light emitting intensity in the three gradations is only an exemplary representation, and for light emitting diode chips with different display effect requirements and different colors, the light emitting intensity may be adjusted accordingly, which is not limited in this embodiment.
In some embodiments, classifying the light emitting diode chips according to emission intensity and/or emission wavelength may further include:
the light emitting diodes are classified into at least two types according to the light emitting wavelength of each light emitting diode chip. In addition to being classified by the luminous intensity, it is also possible to classify by the luminous wavelength, which is also referred to as spectral range. The spectral range can also be used for screening the light emitting diode chips to obtain the light emitting diode chips with better color purity and other light emitting diode chips in the light emitting diode chips with corresponding colors. For example, the light emitting diode chip with high luminous intensity and good spectral range can be applied to the fields with high requirements on display effects, such as high definition display screens, Augmented Reality (AR) and Virtual Reality (VR) fields; the LED chip with low luminous intensity and poor spectral range can be applied to other fields with low requirements on display effect, such as outdoor billboards, outdoor large-scale display screens and the like.
In some embodiments, classifying by emission wavelength may include: the spectral range of each light emitting diode chip is compared with a preset spectral range, and the light emitting diode chips are divided into at least two sub-classes, namely an optimal spectral range sub-class and a non-optimal spectral range sub-class. As for the scheme of classification according to the spectral range, reclassification after classification based on the luminous intensity may be possible; the preset spectral range refers to the optimal spectral range, and if the preset spectral range is within the optimal spectral range, the light-emitting diode chip can be considered to be located in the optimal spectral range subclass; if not, the LED chip is in a sub-class of the non-optimal spectral range.
Specifically, the spectral ranges for the light emitting diode chips of different colors may be divided with reference to the following manner;
dividing the spectral range of the red light diode chip:
the range is within 630nm-645nm, which is the optimal spectral range of the red light diode chip, wherein the red light with the spectrum of about 635nm is optimal; red light in the range of 615nm-630nm or 645nm-660nm is a non-optimal spectral range;
and (3) dividing the spectral range of the green light diode chip:
the range is 520nm-530nm, which is the optimal spectrum range of the green light diode chip, wherein the green light with the spectrum of about 525nm is optimal; green light in the range of 510nm-520nm or 530nm-540nm is a non-optimal spectral range;
dividing the spectrum range of the blue light diode chip:
the range is the optimal spectrum range of the blue light diode chip within 440nm-450nm, wherein the green light with the spectrum of about 450nm is optimal; blue light in the range of 430nm-440nm or 450nm-460nm is a non-optimal spectral range.
In some embodiments, classifying the light emitting diode chips according to emission intensity and/or emission wavelength may further include:
according to the luminous intensity of each LED chip, dividing each LED into at least three types; wherein the luminous intensity of the LED chip is zero candela;
and classifying the light-emitting diode chips subjected to the light-emitting intensity classification into at least two types according to the light-emitting wavelength of each light-emitting diode chip. In addition to being classified by the luminous intensity and the luminous wavelength respectively, the luminous intensity and the luminous wavelength can be combined for classification; after the light emitting diodes are divided into at least three types according to the difference of the light emitting intensity of the light emitting diodes, the light emitting diode chips with various light emitting intensities are further divided into two types according to the difference of the light emitting wavelengths, so that five types are obtained, wherein the five types are respectively: a first level of luminous intensity class at a luminous wavelength in the optimal spectral range; a first level of luminescence intensity class at a non-optimal spectral range of luminescence wavelengths; a second level of luminescence intensity class at a luminescence wavelength in the optimal spectral range; a second level of luminescence intensity class at a non-optimal spectral range of luminescence wavelengths; zero luminous intensity class.
After the colors are classified, in the subsequent application process, the display device needs to be manufactured according to the light emitting diode chips of the three primary colors, so the light emitting diode chips of the different colors can be combined according to a certain mapping relation to be used as the light emitting diode chips of the same major class.
In some embodiments, after the led chips on the wafer are detected, if the detected led chips have zero light emitting intensity, the led chips with zero candela light emitting intensity may be replaced; or the LED chip with the luminous intensity of zero candela is removed. For those led chips with zero light intensity, which are described as being faulty chips, they can be directly discarded from the wafer or replaced by other led chips that can emit light normally.
In some embodiments, after the light emitting diode chips of the same type are stripped and bonded, the method may further include:
and performing optical parameter compensation on each light-emitting diode chip bound to the driving backboard. The optical parameter compensation (De-mura) may achieve a uniform display effect by adjusting the brightness of a single led chip by a program, and the specific De-mura manner may include:
image acquisition: collecting an image of a display screen displaying a pure black picture, and converting the image into a digital image;
relative brightness processing: enhancing the contrast of the acquired image, and highlighting display defects of the image, wherein the display defects comprise uneven display and speckles (mura);
image filtering: acquiring an image through filtering processing, extracting a characteristic image of a display defect, and obtaining a display defect area diagram;
and (3) brightness offset compensation: sampling the characteristic image of the display defect to obtain a brightness offset compensation image;
feedback calibration: and reading the brightness offset compensation value according to the brightness offset compensation graph, and controlling and driving to adjust the brightness of the light emitting diode chip in the corresponding display defect area according to the brightness offset compensation value.
The above lists only one optional optical parameter compensation method, and the specific optical parameter compensation method is not limited in this embodiment.
Therefore, according to the manufacturing method of the display panel provided by the embodiment of the invention, the test data of the light emitting diode chips on each wafer is detected, the light emitting diode chips are classified and bound according to the test data, and the characteristic that the test data of the similar light emitting diode chips are similar is utilized, so that the performance waste of the light emitting diodes during application can be greatly reduced, the light emitting performance loss caused by optical parameter compensation can be reduced or even cancelled, and the yield of the manufactured display device is greatly improved.
The embodiment of the invention also provides a display panel, and the display panel is manufactured by adopting the manufacturing method of the display panel in the embodiment of the invention.
The display panel in the embodiment of the invention is manufactured by the manufacturing method of the display panel in the embodiment of the invention, so that the light emitting effect of the display panel is more uniform, and the utilization rate of the light emitting performance of each light emitting diode chip is high.
The embodiment of the invention also provides a display device which comprises the display panel.
The display device in the embodiment of the invention comprises the display panel, so that the light emitting effect of the display device is more uniform, and the utilization rate of the light emitting performance of each light emitting diode chip is high.
An embodiment of the present invention further provides a chip processing apparatus, as shown in fig. 8, which includes a processor 41, a memory 42, and a communication bus 43, where:
the communication bus 43 is used for realizing connection communication between the processor 41 and the memory 42;
the processor 41 is configured to execute one or more computer programs stored in the memory 42 to implement the steps of the method for manufacturing a display panel in the embodiment of the present invention.
Embodiments of the present invention also provide a computer-readable storage medium including volatile or non-volatile, removable or non-removable media implemented in any method or technology for storage of information such as computer-readable instructions, data structures, computer program modules or other data. Computer-readable storage media include, but are not limited to, RAM (Random Access Memory), ROM (Read-Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory), flash Memory or other Memory technology, CD-ROM (Compact disk Read-Only Memory), Digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can be accessed by a computer.
The computer-readable storage medium in the embodiment of the present invention may be used to store one or more computer programs, and the one or more computer programs stored therein may be executed by a processor to implement at least one step performed by the above-described chip processing apparatus.
An embodiment of the present invention further provides a computer program (or referred to as computer software), which can be distributed on a computer readable medium and executed by a computing device to implement at least one step executed by the chip processing apparatus; and in some cases at least one of the steps shown or described may be performed in an order different than that described in the embodiments above.
Embodiments of the present invention further provide a computer program product, which includes a computer readable device, where the computer program as shown above is stored on the computer readable device. The computer readable device in the embodiment of the present invention may include a computer readable storage medium as shown above.
It will be apparent to those skilled in the art that all or some of the steps of the methods, systems, functional modules/units in the devices disclosed above may be implemented as software (which may be implemented in computer program code executable by a computing device), firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed by several physical components in cooperation. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit.
In addition, as is well known to those of ordinary skill in the art, communication media typically embodies computer readable instructions, data structures, computer program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media. Thus, the present invention is not limited to any specific combination of hardware and software.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.

Claims (12)

1. A method for manufacturing a display panel is characterized by comprising the following steps:
providing a wafer; wherein, a plurality of light emitting diode chips are arranged on the wafer;
performing photoelectric detection on each light emitting diode chip to determine test data of each light emitting diode chip;
selectively stripping the chips with the test data close to each other in each light emitting diode chip;
and binding the stripped light-emitting diode chip to a driving back plate.
2. The method of manufacturing a display panel according to claim 1, wherein the step of performing photoelectric detection on each of the light emitting diode chips includes:
performing photoelectric detection on each of the light emitting diode chips by a photoluminescence detection technique or an electroluminescence detection technique.
3. The method of manufacturing a display panel according to claim 1 or 2, wherein the test data includes a light emission intensity and/or a light emission wavelength.
4. The method for manufacturing a display panel according to claim 3, further comprising:
and classifying the light-emitting diode chips according to the luminous intensity and/or the luminous wavelength.
5. The method of manufacturing a display panel according to claim 4, wherein the test data proximity includes that the emission intensity and/or the emission wavelength are in the same category.
6. The method of claim 3, wherein the classifying the LED chips according to the emission intensities and/or emission wavelengths comprises:
dividing the light-emitting diodes into at least three types according to the luminous intensity of the light-emitting diode chips; wherein a class of light emitting diode chips exists that have a luminous intensity of zero candela.
7. The method of claim 3, wherein the classifying the LED chips according to the emission intensities and/or emission wavelengths comprises:
the light emitting diodes are divided into at least two types according to the light emitting wavelength of each light emitting diode chip.
8. The method of claim 3, wherein the classifying the LED chips according to the emission intensities and/or emission wavelengths comprises:
dividing the light-emitting diodes into at least three types according to the luminous intensity of the light-emitting diode chips; wherein the luminous intensity of the LED chip is zero candela;
and classifying the light-emitting diode chips after the light-emitting intensity classification into at least two types according to the light-emitting wavelength of each light-emitting diode chip.
9. The method for manufacturing a display panel according to claim 6, further comprising:
replacing the light emitting diode chip with the luminous intensity of zero candela; or
And removing the light-emitting diode chip with the luminous intensity of zero candela.
10. The method for manufacturing a display panel according to claim 1, further comprising:
and performing optical parameter compensation on each LED chip bound to the driving backboard.
11. A display panel manufactured by the method for manufacturing a display panel according to any one of claims 1 to 10.
12. A display device characterized by comprising the display panel according to claim 11.
CN202011341608.2A 2020-11-25 2020-11-25 Manufacturing method of display panel, display panel and display device Pending CN114551651A (en)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011341608.2A CN114551651A (en) 2020-11-25 2020-11-25 Manufacturing method of display panel, display panel and display device

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Publication Number Publication Date
CN114551651A true CN114551651A (en) 2022-05-27

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Application Number Title Priority Date Filing Date
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