CN114551499B

CN114551499B - Display screen and electronic equipment

Info

Publication number: CN114551499B
Application number: CN202011348958.1A
Authority: CN
Inventors: 贾彦峰; 马磊; 王鹏
Original assignee: Honor Device Co Ltd
Current assignee: Honor Device Co Ltd
Priority date: 2020-11-26
Filing date: 2020-11-26
Publication date: 2023-01-13
Anticipated expiration: 2040-11-26
Also published as: CN114551499A

Abstract

The embodiment of the application provides a display screen and electronic equipment, and the display screen includes display panel, and display panel includes the display area, centers on the non-display area and the photosensitive circuit of display area, photosensitive circuit set up in the non-display area, photosensitive circuit is used for detecting ambient light intensity. The display screen adopts an embedded mode, the photosensitive circuit for detecting the light intensity of the environment is embedded into the non-display area of the display panel, the preparation of the photosensitive circuit can be completed in the preparation process of each layer structure of the display panel, and an extra space is not required to be arranged on the non-display area to place the ambient light sensor, so that the display screen occupancy of the electronic display device is improved.

Description

Display screen and electronic equipment

Technical Field

The application relates to the technical field of display, in particular to a display screen and electronic equipment.

Background

The Active-matrix Organic Light Emitting Diode (AMOLED) display technology is the most widely used branch in the field of Organic Light Emitting Diodes (OLEDs). The AMOLED display screen has the advantages of high contrast, quick response, high color gamut and the like, so that the AMOLED display screen is increasingly highlighted in application in electronic equipment. An AMOLED display screen of an electronic device typically has an automatic brightness adjustment function. The traditional electronic equipment generally detects the ambient light intensity by arranging an independent ambient light sensor or a photodiode arranged in the AMOLED display screen, but the independent ambient light sensor occupies larger display screen space and is not beneficial to reducing the screen occupation ratio (the ratio of the effective display area of the display screen to the front area of the whole display screen) of the electronic equipment; and the driving circuit of the photodiode arranged in the screen is complex, which is not beneficial to application and popularization.

Disclosure of Invention

The application provides a display screen and electronic equipment to improve the screen of electronic equipment and account for than.

In a first aspect, the present application provides a display screen, including a display panel, the display panel including:

a display area;

the non-display area surrounds the display area, a photosensitive circuit is arranged in the non-display area, and the photosensitive circuit is used for detecting the light intensity of the environment;

the photosensitive circuit comprises a photosensitive resistance layer, and the photosensitive resistance layer is embedded in the non-display area.

Through the scheme that this embodiment provided, adopt embedded mode, in the photosensitive circuit embedding that will be used for detecting ambient light intensity to display panel's non-display area, can accomplish photosensitive circuit's preparation in the preparation process of each layer structure of display panel, need not to set up extra space on non-display area and place ambient light sensor to improve electronic display device's display screen occupation of area.

In a possible design, the display panel further includes an organic light emitting diode and a touch encapsulation layer, and the photoresistor layer is disposed on one side of the organic light emitting diode or the photoresistor layer is disposed on the touch encapsulation layer.

In a possible design, the photosensitive circuit further includes a first lead and a second lead, one side of the photosensitive resistor layer is connected to the anode of the organic light emitting diode, and the other side of the photosensitive resistor layer is connected to the first lead and the second lead respectively.

In one possible design, the display panel further includes a first signal line and a second signal line, the first signal line includes a source/drain signal line, the second signal line includes a gate signal line, the first lead and the first signal line are disposed on the same layer, and the second lead and the second signal line are disposed on the same layer. Through the scheme provided by the embodiment, the second lead and the second signal line can be completed in the same process, no additional process is needed, the process of the display panel can be simplified, and the cost is saved.

In one possible design, the display panel further includes a first signal line and a third signal line, the first signal line includes a source/drain signal line, the third signal line includes a reference voltage signal line, the first lead and the first signal line are disposed on the same layer, and the second lead and the third signal line are disposed on the same layer. Through the scheme provided by the embodiment, the second lead and the third signal line can be completed in the same process, no additional process is needed, the process of the display panel can be simplified, and the cost is saved.

In one possible design, the material of the anode of the organic light emitting diode is a transparent conductive material. Through the scheme provided by the embodiment, the anode of the organic light-emitting diode is made of the transparent conductive material, so that the accuracy of the photosensitive circuit for detecting the ambient light can be improved.

In one possible design, the resistivity of the second wire is less than the resistivity of the first wire. Through the scheme that this embodiment provided, adopt the less second resistance detection environment light intensity of resistance, can reduce the consumed power of environment light detection to reduce the consumption of display screen.

In a possible design, the photosensitive circuit further includes a third lead and a fourth lead, the photosensitive resistance layer includes a first photosensitive electrode, a second photosensitive electrode and a photosensitive material, the photosensitive material is disposed between the first photosensitive electrode and the second photosensitive electrode, the third lead is connected to the first photosensitive electrode, and the fourth lead is connected to the second photosensitive electrode.

In one possible design, the third lead and the fourth lead are disposed on the touch-sensing encapsulation layer.

In one possible design, the display panel further includes an infrared filter layer disposed on the photoresistor layer. Through the scheme that this embodiment provided, infrared filtering layer can the filtering infrared light, avoids infrared light to cause the interference to the photoresistor layer detection environment visible light, improves the detection precision of photoresistor layer.

In one possible design, the first photosensitive electrode and the second photosensitive electrode are serpentine electrodes.

In one possible design, the display panel further includes a thin film encapsulation layer disposed between the organic light emitting diode and the touch encapsulation layer. By the scheme provided by the embodiment, the thin film encapsulation layer can prevent oxygen and moisture from entering the OLED.

In one possible design, the display panel further includes a package glass and a frame sealing adhesive, the package glass covers the organic light emitting diode, the frame sealing adhesive is disposed around the display area, the frame sealing adhesive is in contact with the package glass, and the touch packaging layer is disposed on the package glass.

In a second aspect, the present application provides an electronic device, including a housing and the display screen of the first aspect; the display screen is mounted on the housing.

Drawings

FIG. 1 is a schematic view of a structure in which a photodiode is disposed in a display screen;

FIG. 2 is a schematic diagram of a structure in which a photodiode is disposed in a display screen;

fig. 3 is an exploded schematic view of an electronic device according to an embodiment of the present application;

fig. 4 is a schematic top view of a display panel according to an embodiment of the present application;

FIG. 5a is a schematic structural diagram of the display panel shown in FIG. 2;

FIG. 5b is a schematic view of another structure of the display panel shown in FIG. 2;

FIG. 5c is a schematic view of another structure of the display panel shown in FIG. 2;

fig. 6 is a schematic structural diagram of an OLED according to an embodiment of the present application;

fig. 7 is a schematic structural diagram of a display panel according to an embodiment of the present application;

FIG. 8 is a circuit diagram of a TFT driving circuit and a photosensitive circuit according to an embodiment of the present application;

fig. 9 is a schematic structural diagram of a display panel according to another embodiment of the present application;

FIG. 10 is a schematic structural diagram of a pixel definition layer according to an embodiment of the present disclosure;

fig. 11 is a schematic structural diagram of a thin film encapsulation layer according to an embodiment of the present application;

fig. 12 is a schematic structural diagram of a display screen according to an embodiment of the present application;

fig. 13 is a schematic structural diagram of a display panel according to another embodiment of the present application;

fig. 14 is a schematic structural diagram of a display panel according to another embodiment of the present application.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of and not restrictive on the broad application.

In the description of the present application, unless explicitly stated or limited otherwise, the terms "first", "second", and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the term "plurality" means two or more unless specified or indicated otherwise; the terms "connected", "fixed", and the like are to be construed broadly and may, for example, be fixed or removable or integral or electrical; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

The AMOLED display screen has the advantages of high contrast, quick response, high color gamut and the like, so that the AMOLED display screen is increasingly highlighted in application in electronic equipment. Electronic devices such as mobile phones have limited cruising ability, and the continuous high brightness display of the display screen can seriously affect the service time of the battery power, so that the mobile electronic devices usually have an automatic brightness adjusting function. Conventional electronic devices typically detect ambient light intensity by providing a separate ambient light sensor on the AMOLED display screen or a photodiode disposed within the screen.

A common ambient light sensor adopts a dual-photodiode architecture, wherein one photodiode is used for detecting ambient light full spectrum, the other photodiode is used for detecting infrared light components, and the visible light detection result of the ambient light sensor is the difference between the detection results of the two photodiodes. In order to guarantee the sensitivity and accuracy of the ambient light sensor, a photodiode with a large size needs to be adopted, a large display screen space is occupied, meanwhile, in order to guarantee that the ambient light receiving visual angle is larger than 90 degrees, the required space of the ambient light sensor is further increased, and the screen occupation ratio of the electronic equipment is not favorably reduced.

The photodiode operates under the action of reverse voltage, and the larger the light intensity irradiated on the photodiode is, the larger the reverse current generated by the photodiode is. When no light irradiates on the photodiode, the reverse current of the photodiode is very weak, and the reverse current generated by the photodiode is called as dark current; when light irradiates the photodiode, a reverse current generated by the photodiode is called a photocurrent.

Referring to fig. 1 and 2, a photodiode disposed in a panel is also referred to as an on-screen Photodiode (PD) technology, and the photodiode in the PD technology is embedded in a display panel and is a semiconductor device including a PN junction. In the in-screen photodiode technology, the PN junction area of the photodiode is usually set to be large to increase the received ambient light and improve the sensitivity and the signal-to-noise ratio of the photodiode. The in-screen photodiode technology acquires the intensity of ambient light by detecting photocurrent generated by the photodiode. However, the intra-panel photodiode technology requires a relatively complex driving circuit, and therefore, the intra-panel photodiode technology is not suitable for application and popularization.

The embodiment of the application provides an electronic equipment, and the electronic equipment can be products that have display interface such as cell-phone, display, panel computer, on-vehicle computer to and intelligent display such as intelligent wrist-watch, intelligent bracelet dress products. The embodiment of the present application does not specifically limit the specific form of the electronic device. For convenience of description, the following embodiments are all exemplified by taking the electronic device 01 shown in fig. 1 as a mobile phone.

As shown in fig. 3, the electronic device 01 mainly includes a display screen 10, a middle frame 11 for carrying the display screen 10, and a housing 12. The display screen 10 is mounted on the housing 12 through the middle frame 11. On the side of the middle frame 11 away from the display screen 10, a Central Processing Unit (CPU) 13 or the like may be provided. The display screen 10 may be flexible, bendable or foldable.

The structure of the display screen 10 will be described below.

As shown in fig. 4, the display screen 10 includes a display panel 100, the display panel 100 includes a display area 101, and a non-display area 102 surrounding the display area 101, and a photosensitive circuit (not shown in fig. 4) is disposed in the non-display area 102 and is used for detecting the intensity of ambient light. The photo-sensitive circuit includes a photo-sensitive resistive layer embedded in the non-display region 102.

The display area 101 is an area where a screen can be displayed, and the non-display area 102 is an area where a screen cannot be displayed. An infrared lens, a floodlight sensing element, a distance sensor, a speaker, a microphone, a camera, a dot matrix projector and the like can be disposed in the non-display area 102. With the development of the full screen concept, the proportion of the display area 101 on the front side of the mobile phone to the front side of the mobile phone is higher and higher. The application adopts an embedded mode, the photosensitive circuit is embedded into the non-display area 102, and an extra area is not required to be arranged on the non-display area 102 to place the ambient light sensor, so that the display screen 10 of the electronic display device is improved.

The light sensing circuit may be disposed on the boundary of the R corner of the non-display area 102, which is a rounded border area of the non-display area 102 away from the display area 101, or the boundary of the speaker, or the boundary of the camera or the boundary portion of the non-display area 102 away from the display area 101.

The display panel 100 includes a plurality of pixels 21 and a plurality of Organic Light Emitting Diodes (OLEDs) 30. The plurality of pixels 21 and the plurality of OLEDs 30 are located in the display area 101.

Referring to fig. 5a, each pixel 21 may include three sub-pixels 211, and the three sub-pixels 211 emit red (red, R) light, blue (green, G) light, and blue (blue, B) light, respectively. Alternatively, as shown in fig. 5b, the three sub-pixels 211 emit cyan (C), magenta (M) and yellow (Y) light, respectively. Still alternatively, in other embodiments of the present application, as shown in fig. 5c, each pixel 21 may include four sub-pixels 211, and the four sub-pixels 211 respectively emit red, green, blue, and white (W) light. The number of sub-pixels 211 and the combination of emission colors of each pixel 21 are not limited in the present application.

Each OLED30 corresponds to one sub-pixel 211, and each OLED30 is located within the sub-pixel 211 corresponding to the OLED30.

Referring to fig. 6, the oled30 includes an organic light emitting layer 31, and an anode 32 and a cathode 33 respectively disposed at two sides of the organic light emitting layer 31. When a voltage is applied to the anode 32 and the cathode 33 respectively located at both sides of the organic light emitting layer 31, carriers in the anode 32 and the cathode 33 meet in the organic light emitting layer 31 and excite photons, thereby causing the organic light emitting layer 31 to emit light. At this time, the OLED30 emits light, and the display panel 10 having the plurality of OLEDs 30 displays a screen.

In the same pixel 21, the material of the organic light emitting layer 31 of the OLED30 in different sub-pixels 211 is different, so that the OLEDs 30 in the different sub-pixels 211 can emit lights with different colors, such as red light, green light, or blue light.

In order to improve the probability of the carriers in the anode 32 and the cathode 33 meeting in the organic light emitting layer 31 and improve the light emitting efficiency of the OLED30, as shown in fig. 6, the OLED30 further includes a hole transport layer 34, a hole injection layer 35, an electron transport layer 36, and an electron injection layer 37. The hole transport layer 34 and the hole injection layer 35 are located on the side of the organic light emitting layer 31 facing the anode 32, and are sequentially close to the anode 32. The electron transport layer 36 and the electron injection layer 37 are located on the side of the organic light emitting layer 31 facing the cathode 33, and are sequentially adjacent to the cathode 33.

Based on this, in order to drive the plurality of OLEDs 30 to emit light, the display panel 100 further includes a Thin Film Transistor (TFT) backplane 40.

The following will exemplify an installation mode in which the photosensitive circuit is embedded in the display panel.

Example 1

Referring to fig. 7, the TFT backplane 40 includes a substrate 41, a buffer layer 42, a gate insulating layer 43, a gate dielectric layer 44, an intermediate insulating layer 45, a planarization layer 46, and a plurality of TFT driving circuits 47.

The substrate 41 may be made of glass or plastic, and the substrate 41 is used for carrying the components, such as TFTs, capacitors, electrodes, OLEDs 30, and the like, included in the display panel 10.

The buffer layer 42 is disposed on the substrate 41, and the buffer layer 42 can reduce or prevent foreign materials, moisture or oxygen from penetrating into the TFT driving circuit 47 to protect the TFT, and can also provide a flat surface for the substrate 41. The buffer layer 42 may be made of an inorganic material such as silicon oxide, silicon nitride, or the like. The buffer layer 42 may also be formed of a plurality of layers in which one or more inorganic layers are alternately stacked.

Each TFT driving circuit 47 includes a plurality of TFTs and at least one capacitor for controlling light emission of one OLED30. Fig. 8 illustrates an example in which the TFT driving circuit 47 has a 7T1C structure, that is, the TFT driving circuit 47 includes seven TFTs T1 to T7 and one capacitor C1.

The photo circuit 48 includes a photo resistance layer 481, a first lead 482 and a second lead 483. The photoresistor layer 481 is disposed on one side of the OLED30.

In fig. 8, connection terminals S1 and S2 are respectively connected to scan lines of a display panel, connection terminal Vdata is connected to data lines of the display panel, connection terminal YDD is connected to a power supply, connection terminal CM is connected to a transmission signal line, connection terminals CT and V1 are respectively connected to CPU13, connection terminal VREF is connected to a reference voltage signal line for receiving reference voltage VREF, and connection terminal ELVSS is used for receiving voltage ELVSS. D1 is the OLED30, R1 is the equivalent resistance of the photoresistor layer 481, R2 is the equivalent resistance of the first lead 482, and R3 is the equivalent resistance of the second lead 483. The voltage value of the reference voltage VREF is fixed.

It should be noted that the TFT driving circuit 47 with the 7T1C structure shown in fig. 8 is merely exemplary, other types of TFT circuit structures are also applicable, and the display panel may also adopt a 2T1C, 6T1C, or 5T2C structure.

One of the TFTs (T6 in fig. 8) of the TFT driving circuit 47 includes a semiconductor layer 49, a gate electrode, a source electrode, and a drain electrode. A semiconductor layer 49 is disposed on the buffer layer 42, and the semiconductor layer 49 may be made of low temperature polysilicon (p-Si) or amorphous silicon (a-Si).

The gate insulating layer 43 is provided on the semiconductor layer 49. The gate insulating layer 43 may be made of silicon oxide, silicon nitride, silicon oxynitride, or the like. A first metal layer may be formed on the gate insulating layer 43, and patterned to form the second signal line 402. The gate dielectric layer 44 is disposed on the second signal line 402. The gate dielectric layer 44 may be made of silicon oxide, silicon nitride, or the like. A second metal layer may be formed on the gate dielectric layer 44 and patterned to form a third signal line 403. The intermediate insulating layer 45 is disposed on the third signal line 403. The intermediate insulating layer 45 may be made of silicon oxide, silicon nitride, or the like. A third metal layer may be formed on the intermediate insulating layer 45, and the third metal layer may be patterned to form the first signal line 401 and the first lead 482, i.e., the first lead 482 and the first signal line 401 are disposed in the same layer.

The first signal line 401 includes a source-drain signal line and a power source signal line. The second signal line 402 includes a gate signal line, and the third signal line 403 includes a reference voltage signal line.

A contact hole may be formed by removing portions of the inter-insulating layer 45, the gate dielectric layer 44, and the gate insulating layer 43 using a wet etching process or a plasma dry etching process such that the first signal line 401 contacts the semiconductor layer 49.

The photoresistor layer 481 is disposed on the first lead 482. The photoresistor layer 481 may be any one of selenium, cadmium sulfide, cadmium selenide, cadmium telluride, gallium arsenide, silicon, germanium, and zinc sulfide. The photoresistor layer 481 may be formed on the first lead 482 using a sputtering photolithography process or a screen printing process.

The planarization layer 46 is disposed on the photoresistor layer 481, and covers the first signal line 401, the first lead 482 and the photoresistor layer 481. The planarization layer 46 may protect the TFTs and provide a planar surface. The planarizing layer 46 may be composed of an organic compound such as organic glass or an inorganic substance such as a silicon compound or a metal oxide. The planarization layer 46 on the side of the photoresistor layer 481 facing away from the first lead 482 may be removed by a wet etching process or a plasma dry etching process such that the side of the photoresistor layer 481 facing away from the first lead 482 is exposed to the planarization layer 46.

Each OLED30 is disposed on the planarization layer 46, and the anode 32 of each OLED30 is connected to the drain of at least one TFT in the TFT driving circuit 47 located therebelow, wherein the anode 32 of one OLED30 covers the side of the photoresistor layer 481 exposed on the planarization layer 46, i.e., the side of the photoresistor layer 481 is connected to the anode 32 of the OLED30. The voltages of the anodes 32 of the plurality of OLEDs 30 may be independent of each other, and thus, the light emitting luminance of the OLEDs 30 may be individually controlled.

The anode 32 of the OLED30 is made of a transparent conductive material, such as Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO). The material constituting the cathode 33 of the OLED30 is a metal material, for example, aluminum (Al), manganese (Mg), or the like. In this case, the anode 32 transmits light, and the ambient light is incident on the photoresistor layer 481 through the anode 32 of the OLED30. The anode 32 of the OLED30 is made of a transparent conductive material, which can improve the accuracy of the light sensing circuit 48 for detecting the ambient light. In this case, the light transmittance of the cathode 33 of the OLED30 is small, and thus the light emitted from the OLED30 exits from the side where the anode 32 is located. At this time, the OLED30 is a bottom emission type light emitting device.

In some embodiments, the anode 32 of the OLED30 may not be covered on the side of the photoresistor layer 481 exposed in the planarization layer 46, and the side of the photoresistor layer 481 exposed in the planarization layer 46 may be covered with a transparent conductive material electrically connected to the electrodes on the display panel.

The other side of the photoresistor layer 481 is connected to the first and

second leads

482 and 483, respectively. One ends of the first and

second leads

482 and 483 remote from the photoresistor layer 481 are connected to the CPU 13.

In some embodiments, the second lead 483 is disposed in the same layer as the second signal line 402. Specifically, the first metal layer on the gate insulating layer 43 is patterned, a second lead 483 is further formed, a first via hole is formed by removing the intermediate insulating layer 45 and the gate dielectric layer 44, and the other side of the photoresistor layer 481 is in contact with the second lead 483 through the first via hole. In this embodiment, the second lead 483 and the second signal line 402 can be completed in the same process, and no additional process is required, so that the process of the display panel 100 can be simplified and the cost can be saved.

Referring to fig. 9, in other embodiments, the second lead 483 is disposed in the same layer as the third signal line 403. Specifically, the second metal layer on the gate dielectric layer 44 is patterned, and a second lead 483 is further formed, and a second via hole is formed by removing a portion of the intermediate insulating layer 45, and the other side of the photoresistor layer 481 is in contact with the second lead 483 through the second via hole. In this embodiment, the second lead 483 and the third signal line 403 can be formed in the same process, and thus, an additional process is not required, which can simplify the process of the display panel 100 and save the cost.

The photoresistor layer 481 is equivalent to a first resistor R1, the first lead 482 is equivalent to a second resistor R2, and the second lead 483 is equivalent to a third resistor R3.

Each TFT driving circuit 47 is for driving light emission of one OLED30 connected thereto.

The anode of the OLED30 connected to one side of the photoresistor layer 481 provides a first potential for the photoresistor layer 481, and a second potential is provided for the photoresistor layer 481 through a connection terminal V1 of the second resistor R2 connected to the other side of the photoresistor layer 481, the photoresistor layer 481 is powered on and operates by the first potential and the second potential, the photoresistor layer 481 is illuminated by different light intensities of ambient light, the resistance of the first resistor R1 is different, when the ambient light is incident on the photoresistor layer 481 through the transparent conductive material, the resistance of the first resistor R1 is changed, so that the current flowing through the third resistor R3 is changed, the CPU13 obtains the voltage at the two ends of the third resistor R3 by detecting the current of the third resistor R3, and obtains the ambient light intensity of the environment where the electronic device is located according to the calculation of the voltage at the two ends of the third resistor R3, so as to adjust the brightness of the display screen 10 according to the ambient light intensity.

When the transparent conductive material connected to one side of the photoresistor layer 481 is another transparent conductive material that is not the anode of the OLED30, the display panel provides a third potential through the transparent conductive material, and provides a second potential to the photoresistor layer 481 through a connection terminal V1 of the second resistor R2 connected to the other side of the photoresistor layer 481, and the third potential and the second potential make the photoresistor layer 481 operate by conduction.

The resistance of the third resistor R3 is smaller than that of the second resistor R2. The resistivity of the second wire 483 is smaller than the resistivity of the first wire 482. The third resistor R3 with smaller resistance is adopted to detect the ambient light intensity, so that the power consumption of ambient light detection can be reduced, and the power consumption of the display screen 10 is reduced.

Referring to fig. 10, the display panel 100 further includes a Pixel Definition Layer (PDL) 51 on the TFT backplane 40. The pixel defining layer 51 is provided with a plurality of openings 511. The pixel defining layer 51 may be processed by dry etching, wet etching, nano-imprinting, etc. to form the opening 511, and the width of the opening 511 may take into consideration the resolution of the display screen 10, the density of the pixels 21, and the density of the sub-pixels 211. The shape of the opening 511 may be a concave structure, and the longitudinal section thereof may be a concave structure or a dam structure. In addition, the surface of the pixel defining layer 51 may also be formed with various recessed structures, such as triangular pyramid, semicircle, etc. Alternatively, the pixel defining layer 51 may be disposed on the planarization layer 46. The pixel defining layer 51 may be formed by a variety of techniques, such as inkjet printing, screen printing, lamination, spin coating, and the like. The pixel defining layer 51 may be made of an organic insulating material or an inorganic insulating material, such as acrylic, silicon oxide, silicon nitride, benzocyclobutene, or the like.

Each opening 511 corresponds to one sub-pixel 211, and each opening 511 is located in the sub-pixel 211 corresponding to the opening 511. In this case, each OLED30 corresponds to one opening 511, and the organic light emitting layer 31 of the OLED30 is located in the opening 511 corresponding to the OLED30.

A retaining wall is arranged between two adjacent openings 511. The barriers separate the organic light emitting layers 31 of the OLEDs 30 in the adjacent two different sub-pixels 211 so that the light emitting colors of the respective OLEDs 30 can be independent.

Furthermore, the cathodes 33 of the respective OLEDs 30 are usually connected to the same voltage, for example the voltage ELVSS. Thus, as shown in fig. 7 and 9, the cathodes 33 of the OLEDs 30 may be electrically connected together in a unitary structure, forming a single cathode 33 layer. The cathode 33 layer covers all the organic light emitting layers 31 of the OLEDs 30.

In some embodiments, the substrate 41 may be a flexible resin substrate 41 made of a flexible material, such as polyethylene terephthalate (PET).

In this case, the display panel 100 may be a flexible display panel 100. The flexible display panel 100 can be encapsulated using a Thin Film Encapsulation (TFE) technique. Based on this, as shown in fig. 7 and 9, the display panel 100 further includes a thin film encapsulation layer 60 covering each OLED30. The thin film encapsulation technique is a technique of stacking an inorganic layer and an organic layer on the cathode 33 layer of the OLED30 to prevent oxygen and moisture from entering. The thin-film encapsulation layer 60 may be suitable for a foldable, bendable AMOLED display screen 10. The thin film encapsulation layer 60 may be comprised of an organic encapsulation layer 62 and at least one inorganic encapsulation layer. The inorganic encapsulation layer may serve to isolate oxygen and moisture, but the properties of the inorganic encapsulation layer are not uniform, in which case an organic encapsulation layer 62 may be disposed on the inorganic encapsulation layer to stabilize the inorganic encapsulation layer. The thin film encapsulation layer 60 can be fabricated by using a low temperature Atomic Layer Deposition (ALD) technique or an inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) technique.

Illustratively, as shown in fig. 11, the thin film encapsulation layer 60 is composed of a first inorganic encapsulation layer 61, an organic encapsulation layer 62, and a second inorganic encapsulation layer 63. Wherein the first inorganic encapsulation layer 61 covers the cathode 33 of the OLED30 and is made of an inorganic material (e.g., silicon oxide SiO 2). The organic encapsulation layer 62 is disposed above the first inorganic encapsulation layer 61, and may be made of polyethylene terephthalate (PET), polyoxymethylene (Polyoxymethylene), or the like. The second inorganic encapsulation layer 63 covers the organic encapsulation layer 62. The second inorganic encapsulation layer 63 may be made of silicon oxide (SiO 2), silicon nitride (SiNx), or the like. It should be noted that the thin film encapsulation layer 60 shown in the embodiment of the present application is only an example, and the thin film encapsulation layer 60 may also be formed by stacking 11 inorganic encapsulation layers and 11 organic encapsulation layers 62. As the technology develops, the thin film encapsulation layer 60 may also be formed by a layer of material, and the structure of the thin film encapsulation layer 60 is not limited in the embodiment of the present application.

In other embodiments, the substrate 41 may be a glass substrate or a hard resin substrate. In this case, the display panel 100 is a hard screen, and the screen cannot be bent. In order to encapsulate each OLED30 in the display panel 100, as shown in fig. 12, the display panel 100 further includes an encapsulation glass 91 and a sealant 92. The encapsulation glass 91 covers each OLED30, and the frame sealing adhesive 92 is disposed around the display region 101 of the display panel 100. The encapsulation glass 91 contacts the frame sealant 92. The material constituting the sealing glass 91 may include glass, transparent hard resin, sapphire, or the like.

Example two

Referring to fig. 13, the display panel 100 further includes a touch encapsulation layer 70. In this example, the structure of the TFT backplane 40 is the same as that of the first example, except that the photosensitive circuit 48 is disposed in the touch encapsulation layer 70. The touch encapsulation layer 70 is disposed on each OLED30.

Referring to fig. 14, the photosensitive circuit 48 includes a photosensitive resistor layer 491, a third lead 492, and a fourth lead 493. The photoresistor layer 491 includes a first photosensitive electrode 4911, a second photosensitive electrode 4912, and a photosensitive material 4913. A photoactive material 4913 is disposed between the first photoactive electrode 4911 and the second photoactive electrode 4912. A third lead line 492 is connected to the first photosensitive electrode 4911 and a fourth lead line 493 is connected to the second photosensitive electrode 4912.

The photosensitive material 4913 may be made of any one of cadmium sulfide, selenium, aluminum sulfide, lead sulfide, and bismuth sulfide. The photosensitive material 4913 may be coated on a region between the first photosensitive electrode 4911 and the second photosensitive electrode 4912 by a screen printing process.

The third lead line 492 and the fourth lead line 493 are also connected to the CPU13, wherein the CPU13 supplies power to the light sensitive circuit 48 through the third lead line 492 or the fourth lead line 493. The resistance of the photoresistor layer 491 is different under different light intensities of ambient light. When the ambient light enters the photoresistor layer 491, the CPU13 detects the current in the loops of the photoresistor 48 to obtain the ambient light intensity of the environment where the electronic device is located, so as to adjust the brightness of the display screen 10 according to the ambient light intensity.

The first photosensitive electrode 4911 and the second photosensitive electrode 4912 are serpentine electrodes. The first photosensitive electrode 4911 and the second photosensitive electrode 4912 may be formed in the touch encapsulation layer 70 by using a low-temperature metal evaporation process.

In some embodiments, the display panel 100 further includes an infrared filter layer disposed on the photoresistor layer 491. The infrared filter layer can filter out infrared light, so that the infrared light is prevented from interfering the photoresistor layer 491 with visible light in the detection environment, and the detection precision of the photoresistor layer 491 is improved.

In this case, the display panel 100 may be a flexible display panel 100. The flexible display panel 100 can be encapsulated by a Thin Film Encapsulation (TFE) technique. Based on this, as shown in fig. 10, the display panel 100 further includes a thin film encapsulation layer 60, the thin film encapsulation layer 60 is disposed between the OLEDs 30 and the touch encapsulation layer 70, and it can be understood that the thin film encapsulation layer 60 covers each OLED30 and is located above the cathode 33 layer of the OLED30.

The thin film encapsulation technique is a technique of stacking an inorganic layer and an organic layer on the cathode 33 layer of the OLED30 to prevent oxygen and moisture from entering. The thin-film encapsulation layer 60 may be suitable for a foldable, bendable AMOLED30 display screen 10. The thin film encapsulation layer 60 may be comprised of an organic encapsulation layer 62 and at least one inorganic encapsulation layer. The inorganic encapsulation layer may serve to isolate oxygen and moisture, but the properties of the inorganic encapsulation layer are not uniform, in which case an organic encapsulation layer 62 may be disposed on the inorganic encapsulation layer to stabilize the inorganic encapsulation layer. The thin film encapsulation layer 60 can be fabricated by using a low temperature Atomic Layer Deposition (ALD) technique or an inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) technique.

Illustratively, the thin film encapsulation layer 60 is composed of a first inorganic encapsulation layer 61, an organic encapsulation layer 62, and a second inorganic encapsulation layer 63. Wherein the first inorganic encapsulation layer 61 covers the cathode 33 layer of the OLED30 and is made of an inorganic material (e.g., silicon oxide SiO 2). The organic encapsulation layer 62 is disposed above the first inorganic encapsulation layer 61, and may be made of polyethylene terephthalate (PET), polyoxymethylene (Polyoxymethylene), or the like. The second inorganic encapsulation layer 63 covers the organic encapsulation layer 62. The second inorganic encapsulation layer 63 may be made of silicon oxide (SiO 2), silicon nitride (SiNx), or the like. It should be noted that the thin film encapsulation layer 60 shown in the embodiment of the present application is only an example, and the thin film encapsulation layer 60 may also be formed by stacking 11 inorganic encapsulation layers and 11 organic encapsulation layers 62. As the technology develops, the thin film encapsulation layer 60 may also be formed by a layer of material, and the structure of the thin film encapsulation layer 60 is not limited in the embodiment of the present application.

Referring to fig. 12 again, in other embodiments, the substrate 41 may also be a glass substrate or a hard resin substrate. In this case, the display panel 100 is a hard screen, and the screen cannot be bent. In order to encapsulate each OLED30 in the display panel 100, as shown in fig. 12, the display panel 100 further includes an encapsulation glass 91 and a sealant 92. The encapsulation glass 91 covers the respective OLEDs 30. The frame sealing adhesive 92 is disposed around the display region 101, and the frame sealing adhesive 92 contacts the package glass 91. The material constituting the sealing glass 91 may include glass, transparent hard resin, sapphire, or the like. The touch encapsulation layer 70 is disposed on the encapsulation glass 91.

The display screen 10 may further include a polarizer 901, an optical adhesive 902, and a cover plate 903. The polarizer 901 is disposed above the touch encapsulation layer 70, and the polarizer 901 can counteract reflected light generated when external light enters the display screen 10, so as to reduce interference generated by reflection of the external light and enhance contrast of the display screen 10. The cover 903 is disposed above the polarizer 901, and the optical adhesive 902 is disposed on the polarizer 901 and the cover 903, for adhering the cover 903 to the polarizer 901.

To sum up, this application is through adopting embedded mode, and in the photosensitive circuit embedding that will be used for detecting the ambient light intensity to display panel 100's non-display area 102, can be in the preparation process of each layer structure of display panel, accomplish photosensitive circuit's preparation, need not to set up extra space on non-display area 102 and place the ambient light sensor to improve electronic display device's display screen 10 screens and account for than.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that various changes and modifications can be made by those skilled in the art without departing from the spirit of the invention, and these changes and modifications are all within the scope of the invention. Therefore, the protection scope of the present patent should be subject to the appended claims.

Claims

1. A display screen, comprising a display panel, the display panel comprising:

a display area;

the photosensitive circuit comprises a photosensitive resistance layer, and the photosensitive resistance layer is embedded in the non-display area;

the display panel further comprises an organic light emitting diode and a touch packaging layer, wherein the photoresistor layer is arranged on one side of the organic light emitting diode or arranged on the touch packaging layer;

the photosensitive circuit further comprises a first lead and a second lead, wherein one side of the photosensitive resistor layer is connected with the anode of the organic light-emitting diode, and the other side of the photosensitive resistor layer is respectively connected with the first lead and the second lead;

the second lead has a resistivity less than the resistivity of the first lead.

2. The display screen of claim 1, wherein the display panel further comprises a first signal line and a second signal line, the first signal line comprises a source-drain signal line, the second signal line comprises a gate signal line, the first lead and the first signal line are disposed in the same layer, and the second lead and the second signal line are disposed in the same layer.

3. The display screen of claim 1, wherein the display panel further comprises a first signal line and a third signal line, the first signal line comprises a source-drain signal line, the third signal line comprises a reference voltage signal line, the first lead and the first signal line are disposed in the same layer, and the second lead and the third signal line are disposed in the same layer.

4. The display panel of claim 1, wherein the material of the anode of the organic light emitting diode is a transparent conductive material.

5. The display screen of claim 1, wherein the photosensitive circuit further comprises a third lead and a fourth lead, the photosensitive resistive layer comprises a first photosensitive electrode, a second photosensitive electrode and a photosensitive material, the photosensitive material is disposed between the first photosensitive electrode and the second photosensitive electrode, the third lead is connected to the first photosensitive electrode, and the fourth lead is connected to the second photosensitive electrode.

6. The display screen of claim 5, wherein the third lead and the fourth lead are disposed on the touch-sensitive encapsulation layer.

7. The display screen of claim 5, wherein the display panel further comprises an infrared filter layer disposed on the photoresistor layer.

8. The display screen of claim 5, wherein the first photosensitive electrode and the second photosensitive electrode are serpentine electrodes.

9. The display screen of claim 1, wherein the display panel further comprises a thin film encapsulation layer disposed between the organic light emitting diode and the touch encapsulation layer.

10. The display screen of claim 1, wherein the display panel further comprises a packaging glass and a frame sealing adhesive, the packaging glass covers the organic light emitting diode, the frame sealing adhesive is disposed around the display area, the frame sealing adhesive is in contact with the packaging glass, and the touch packaging layer is disposed on the packaging glass.

11. An electronic device comprising a housing and a display screen according to any one of claims 1 to 10; the display screen is mounted on the housing.