CN114551377B - IGBT (insulated Gate Bipolar transistor) driving packaging structure and manufacturing method - Google Patents

IGBT (insulated Gate Bipolar transistor) driving packaging structure and manufacturing method Download PDF

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CN114551377B
CN114551377B CN202210433564.9A CN202210433564A CN114551377B CN 114551377 B CN114551377 B CN 114551377B CN 202210433564 A CN202210433564 A CN 202210433564A CN 114551377 B CN114551377 B CN 114551377B
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magnetic core
region
signal transmission
chip
transmission element
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CN114551377A (en
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王文广
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Hangzhou Feishide Technology Co ltd
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HANGZHOU FIRSTACK TECHNOLOGY CO LTD
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/24—Magnetic cores
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/2823—Wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/30—Fastening or clamping coils, windings, or parts thereof together; Fastening or mounting coils or windings on core, casing, or other support
    • H01F27/306—Fastening or mounting coils or windings on core, casing or other support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/28—Coils; Windings; Conductive connections
    • H01F27/32—Insulating of coils, windings, or parts thereof
    • H01F27/324—Insulation between coil and core, between different winding sections, around the coil; Other insulation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Conversion In General (AREA)

Abstract

The embodiment of the application discloses an IGBT driving packaging structure and a manufacturing method thereof, wherein the IGBT driving packaging structure comprises the following steps: the circuit board, the power transmission component, the signal transmission component, the transformer, the signal isolation chip and the plastic package body are positioned on the surface of the circuit board, the transformer comprises a magnetic core and a coil, and the resistivity of the magnetic core is not lower than 1 × 10 8 Omega-m, the magnetic core can bear higher voltage, so that the IGBT driving packaging structure has stronger voltage resistance. The coil is wound on the third magnetic core and is made of the completely insulated wire FIW, so that the insulation performance is good, the IGBT driving packaging structure has strong voltage resistance, the size of the transformer can be reduced, and the size of the IGBT driving packaging structure is reduced. In addition, the IGBT driving packaging structure is uniformly packaged by using the plastic packaging body, so that the size of the IGBT driving packaging structure is reduced, and the size of the IGBT driving packaging structure is smaller.

Description

IGBT (insulated Gate Bipolar transistor) driving packaging structure and manufacturing method
Technical Field
The application relates to the technical field of IGBT, in particular to an IGBT driving packaging structure and a manufacturing method for manufacturing the IGBT driving packaging structure.
Background
In the field of power electronic technology, an Insulated Gate Bipolar Transistor (IGBT) is widely used as a controllable semiconductor switching device, and with the further development of electronic power products, the current of the IGBT device is increasingly large, and the power density is increasingly high. The IGBT device comprises an IGBT drive, the current of the IGBT device is larger and larger, the power density is higher and higher, in order to meet the requirement of the IGBT device, the current of the IGBT drive is larger and larger, the power density is higher and higher, and under the condition, in order to guarantee the safety of the IGBT drive, the IGBT drive is required to have higher voltage withstanding capability. And, with the current driven by the IGBT becoming larger and larger, the power density becoming higher and higher, the size of the IGBT device is gradually miniaturized, and because the IGBT driving size is larger than the IGBT, the IGBT device occupying a large area, the IGBT driving size is also becoming smaller and smaller, otherwise the IGBT device miniaturization will be limited, making the IGBT device size difficult to reduce, which is not favorable for the application of the IGBT device in high power density situations. Therefore, it is important to provide a small-sized IGBT driving package structure with high withstand voltage capability, which is a research focus of those skilled in the art.
Disclosure of Invention
In order to solve the technical problem, an embodiment of the present application provides an IGBT driving package structure, which has a strong voltage withstanding capability and a small size.
In order to solve the above problem, the embodiment of the present application provides the following technical solutions:
an IGBT drive package structure, comprising:
the circuit board comprises a power transmission element and a signal transmission element which are positioned on the surface of the circuit board;
be located the transformer on circuit board surface, the transformer includes magnetic core and coil, the magnetic core is including relative first magnetic core and the second magnetic core that sets up, still includes third magnetic core and fourth magnetic core, third magnetic core both ends respectively with first magnetic core with the second magnetic core links to each other, fourth magnetic core both ends respectively with first magnetic core with the second magnetic core links to each other, the third magnetic core with the fourth magnetic core is not continuous, wherein, the resistivity of magnetic core is not less than 1 10 8 Omega-m; the coil is wound on the third magnetic core and is connected with the power transmission element, wherein the coil is made of a completely insulated wire;
the signal transmission element comprises a power transmission unit and a signal transmission unit, the signal transmission unit is connected with the signal isolation chip, and the power transmission unit is connected with the transformer;
the plastic package body covers the surface of the circuit board, extends along a first direction and covers the transformer, the power transmission element, the signal isolation chip and the signal transmission element, wherein the first direction is perpendicular to the surface of the circuit board.
Optionally, the magnetic core is made of nickel-zinc ferrite; the coil includes the copper line and covers the first insulating layer on copper line surface except its terminal surface, the value range of first insulating layer thickness is 0~0.3mm, including right end point value.
Optionally, the circuit board includes a first region, a second region and a third region located between the first region and the second region, wherein the first region is a high voltage region with a voltage greater than 1000V, the second region is a low voltage region with a voltage lower than 1000V, and a surface of the third region has a second insulating layer covering a surface of the third region to insulate and separate the first region from the second region.
Optionally, the power transmission element includes a first power transmission element and a second power transmission element, the first power transmission element is located in the first region, and the second power transmission element is located in the second region;
the transformer is positioned in the first area and the second area, the coil comprises a first coil and a second coil, and the first coil is wound on the third magnetic core and is connected with the first power transmission element; the second coil is wound around the first coil and connected to the second power transmission element.
Optionally, the signal transmission element includes a first signal transmission element and a second signal transmission element, the first signal transmission element is located in the first region, the second signal transmission element is located in the second region, the first signal transmission element includes a first signal transmission unit and a first power transmission unit, the second signal transmission element includes a second signal transmission unit and a second power transmission unit, the first power transmission unit is connected to the transformer, and the second power transmission unit is connected to the transformer;
the signal isolation chip is located in the first area and located in the second area, the signal isolation chip comprises a first sub-chip and a second sub-chip which are arranged along the first direction, a third insulating layer is arranged between the first sub-chip and the second sub-chip and used for insulating and isolating the first sub-chip and the second sub-chip, the first signal transmission unit is connected with the first sub-chip, and the second signal transmission unit is connected with the second sub-chip.
Optionally, the material of the second insulating layer is SiO 2 The material of the third insulating layer is SiO 2 。
The embodiment of the application also provides a manufacturing method of the IGBT packaging structure, which comprises the following steps:
providing a circuit board, and forming a power transmission element and a signal transmission element on the surface of the circuit board;
the transformer is formed on the surface of the circuit board and comprises a magnetic core and a coil, wherein the magnetic core comprises a first magnetic core and a second magnetic core which are oppositely arranged, and further comprises a third magnetic core and a fourth magnetic core, two ends of the third magnetic core are respectively connected with the first magnetic core and the second magnetic core, two ends of the fourth magnetic core are respectively connected with the first magnetic core and the second magnetic core, the third magnetic core is not connected with the fourth magnetic core, and the resistivity of the magnetic core is not lower than 1 x 10 8 Omega-m; the coil is wound on the third magnetic core and is connected with the power transmission element, wherein the coil is made of a completely insulated wire;
forming a signal isolation chip on the surface of the circuit board, wherein the signal transmission element comprises a power transmission unit and a signal transmission unit, the signal transmission unit is connected with the signal isolation chip, and the power transmission unit is connected with the transformer;
and forming a plastic package body, wherein the plastic package body covers the surface of the circuit board, extends along a first direction and covers the transformer, the power transmission element, the signal isolation chip and the signal transmission element, and the first direction is vertical to the surface of the circuit board.
Optionally, the circuit board includes a first region, a second region and a third region located between the first region and the second region, wherein the first region is a high voltage region, the voltage of which is greater than 1000V, and the second region is a low voltage region, the voltage of which is lower than 1000V; the method further comprises the following steps:
and forming a second insulating layer covering the surface of the third region on the surface of the third region, and insulating and isolating the first region and the second region.
Optionally, forming the power transmission element on the surface of the circuit board includes:
forming a first power transfer device in the first region;
forming a second power transfer device in the second region;
wherein the transformer is located in the first area and located in the second area, the coil includes a first coil and a second coil, and the first coil is wound on the third magnetic core and connected to the first power transmission element; the second coil is wound around the first coil and connected to the second power transmission element.
Optionally, forming the signal transmission element includes:
forming a first signal transmission element in the first region, the first signal transmission element including a first signal transmission unit and a first power transmission unit;
forming a second signal transmission element in the second region, the second signal transmission element including a second signal transmission unit and a second power transmission unit;
the signal isolation chip is located in the first area and located in the second area, the signal isolation chip comprises a first sub-chip and a second sub-chip which are arranged along the first direction, a third insulating layer is arranged between the first sub-chip and the second sub-chip and used for insulating and isolating the first sub-chip and the second sub-chip, the first signal transmission unit is connected with the first sub-chip, the second signal transmission unit is connected with the second sub-chip, the first power transmission unit is connected with the transformer, and the second power transmission unit is connected with the transformer.
Compared with the prior art, the technical scheme has the following advantages:
the technical scheme that this application provided includes the circuit board, is located power transmission component, signal transmission component, transformer, signal isolation chip, the plastic-sealed body on circuit board surface, wherein, the transformer includes magnetic core and coil, the resistivity of magnetic core is not less than 1 x 10 8 Compared with the magnetic core made of manganese-zinc ferrite, the magnetic core has higher resistivity, so that the magnetic core is a high-resistivity magnetic core, and can bear higher voltage, and further has higher voltage endurance, and the IGBT driving packaging structure has higher voltage endurance. The coil is wound on the third magnetic core of the magnetic core, and is made of the completely-insulated wire FIW, so that the insulating property is good, when the coil is wound on the third magnetic core, good insulation among a plurality of formed rings is achieved, voltage breakdown between adjacent rings on the third magnetic core can be effectively avoided, the voltage withstanding capability of the IGBT driving packaging structure can be improved, and the IGBT driving packaging structure has strong voltage withstanding capability. In addition, since the fully insulated wire FIW has good insulating ability and a wide size selection range, the coil can be manufactured by using the fully insulated wire FIW with a smaller size on the premise of ensuring insulation, so as to reduce the size of the transformer, and further contribute to reducing the size of the IGBT driving packaging structure.
In addition, the IGBT drive packaging structure's that this application embodiment provided plastic-sealed body cladding transformer, signal isolation chip, power transmission component and signal transmission component, promptly the plastic-sealed body cladding a plurality of power electronic component among the IGBT drive packaging structure, make a plurality of power electronic component among the IGBT drive packaging structure do not need independent plastic envelope, only utilize the unified plastic envelope of plastic-sealed body can, can reduce the space that a plurality of components in the IGBT drive packaging structure occupy, make IGBT drive packaging structure size is less. Moreover, the plurality of power electronic elements in the IGBT drive packaging structure do not need to be subjected to independent plastic packaging, and the circuit of the IGBT drive packaging structure can be simplified, so that the size of the IGBT drive packaging structure is reduced, and the size of the IGBT drive packaging structure is smaller.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an IGBT driving package structure provided in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a magnetic core in an IGBT driving package structure provided in an embodiment of the present application;
FIG. 3 is a cross-sectional view along AA1 of FIG. 1;
fig. 4 is a schematic structural diagram of a coil in an IGBT driving package structure provided in an embodiment of the present application;
fig. 5 is a schematic structural diagram of another IGBT driving package structure provided in the embodiment of the present application;
fig. 6 is a schematic structural diagram of a signal isolation chip in an IGBT driving package structure according to an embodiment of the present application;
fig. 7 is a flowchart of a method for manufacturing an IGBT driving package structure according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited to the specific embodiments disclosed below.
Next, the present application will be described in detail with reference to the drawings, and in the detailed description of the embodiments of the present application, the cross-sectional views illustrating the structure of the device are not enlarged partially according to the general scale for convenience of illustration, and the drawings are only examples, which should not limit the scope of the protection of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
As described in the background section, it is a research focus of those skilled in the art to provide a smaller IGBT driving package structure with a stronger voltage endurance capability.
Based on the above research, an embodiment of the present application provides an IGBT driving package structure, as shown in fig. 1, the package structure includes:
a circuit board 10, a power transmission element 11 and a signal transmission element 12 positioned on the surface of the circuit board 10;
a transformer 20 on the surface of the circuit board 10; as shown in fig. 2, the transformer 20 includes a magnetic core and a coil 22, the magnetic core includes a first magnetic core 211 and a second magnetic core 212 which are oppositely arranged, and further includes a third magnetic core 213 and a fourth magnetic core 214, two ends of the third magnetic core 223 are respectively connected to the first magnetic core 211 and the second magnetic core 212, two ends of the fourth magnetic core 214 are respectively connected to the first magnetic core 211 and the second magnetic core 212, and the third magnetic core 213 is not connected to the fourth magnetic core 214, that is, the third magnetic core 213 is not in contact with the fourth magnetic core 214, wherein the resistivity of the magnetic core 21 is not lower than 1 × 10 8 Ω -m, i.e. the resistivity of the first 211, second 212, third 213 and fourth 214 cores is not less than 1 x 10 8 Omega-m, the resistivity is higher compared with that of a common manganese-zinc ferrite, so that the magnetic core is a magnetic core with higher resistivity; the coil 22 is wound on the third magnetic core 223 and connected to the power transmission element 11, wherein the coil 22 is completedFully Insulated Wire (FIW for short), which is known to have a relatively high insulating capacity, and thus the coil 22 has a relatively high insulating capacity; the third magnetic core is used for winding a coil to generate current, and the fourth magnetic core, the first magnetic core, the second magnetic core and the third magnetic core are used for forming a loop, so that the current on the magnetic cores flows through the loop;
the signal isolation chip 30 is positioned on the surface of the circuit board 10, the signal transmission element 12 comprises a signal transmission unit 17 and a power transmission unit 18, the signal transmission unit 17 is connected with the signal isolation chip 30, and the power transmission unit 18 is connected with the transformer 20; it should be noted that, to transmit the signal output by the signal isolation chip to the power electronic device, the signal output by the signal isolation chip needs to be output in combination with the power signal, so that the power electronic device can perform corresponding work according to the signal output by the isolation chip, and therefore, the signal transmission element includes a power transmission unit and a signal transmission unit, so as to transmit the signal output by the signal isolation chip to other power electronic elements through the signal transmission element; it should be further noted that the signal isolation chip is connected to the signal transmission unit through a metal trace on the circuit board, the power transmission unit is connected to the transformer through a metal trace on the circuit board, and for simplicity of fig. 1, the metal connection line is not shown in fig. 1;
as shown in fig. 3, fig. 3 is a cross-sectional view taken along AA1, the plastic package body 40 covers the surface of the circuit board 10 and extends along a first direction, and covers the transformer 20, the power transmission element 11, the signal isolation chip 30 and the signal transmission element 12, wherein the first direction is perpendicular to the surface of the circuit board 10. It should be noted that, it is known that the surface of the circuit board has a transformer, a signal isolation signal, a power transmission element, and a signal transmission element, so that the plastic package body covering the surface of the circuit board means that the plastic package body covers a surface of a region of the surface of the circuit board except for a region where the transformer, the signal isolation signal, the power transmission element, and the signal transmission element are located, and the IGBT driving package structure has a plurality of other devices located on the surface of the circuit board according to actual requirements, in addition to the above devices, and the plastic package body also covers the other devices. It should be further noted that the IGBT driving package structure has a plurality of power electronic components located on the surface of the circuit board, the power transmission component is connected to the transformer to transmit the power output by the transformer to other power electronic components through the power transmission component, a signal transmission unit in the signal transmission component is connected to the signal isolation chip, and a power transmission unit in the signal transmission component is connected to the transformer to transmit the signal output by the signal isolation chip to other power electronic components through the signal transmission component, so as to ensure the operation of the IGBT driving package structure.
Specifically, in the embodiment of the present application, the IGBT driving package structure includes a transformer including a magnetic core and a coil, wherein the resistivity of the magnetic core is not lower than 1 × 10 8 Omega-m, the material of the magnetic core commonly used today is manganese-zinc ferrite, which has a resistance of about 1 x 10 3 Ω-m~1*10 5 Omega-m, the resistance of the magnetic core in the IGBT drive packaging structure provided by the embodiment of the application is higher than the resistivity of the magnetic core of manganese-zinc ferrite, so that the magnetic core is the magnetic core with higher resistivity, the magnetic core can bear higher voltage, and the magnetic core has stronger voltage endurance, so that the IGBT drive packaging structure has stronger voltage endurance. Moreover, the coil is made of a completely insulated wire FIW, and it is known that a completely insulated wire FIW has a strong insulating ability, so that the coil has a strong insulating ability, and when the coil is wound on the third magnetic core, a plurality of formed coils can be well insulated from each other, and voltage breakdown between adjacent coils on the third magnetic core can be effectively avoided, so that the voltage withstanding ability of the IGBT driving package structure is effectively improved, that is, the IGBT driving package structure has a strong voltage withstanding ability. Also, since the fully insulated wire FIW has a strong insulating ability,the radius selection range is large, so that on the premise of ensuring insulativity, a completely insulated wire with a smaller radius can be selected to prepare the coil, the radius of the coil is smaller, a transformer with a smaller size can be supported, and the size of the transformer can be reduced.
In addition, IGBT drive packaging structure is including the plastic-sealed body that is located the circuit board surface, and cladding transformer, signal isolation chip, power transmission component and signal transmission component, promptly the plastic-sealed body cladding a plurality of power electronic component among the IGBT drive packaging structure, make a plurality of power electronic component among the IGBT drive packaging structure do not need independent plastic envelope, only need utilize the unified plastic envelope of plastic-sealed body can, can reduce the space that a plurality of components in the IGBT drive packaging structure occupy, and then help reducing IGBT drive packaging structure's size makes IGBT drive packaging structure size is less. In addition, the plurality of power electronic elements in the IGBT driving packaging structure do not need to be subjected to independent plastic packaging, so that a complex connecting circuit is prevented from being formed outside each power electronic element packaging body, the power electronic element packaging body can be connected with other elements or external circuits, the circuit of the IGBT driving packaging structure can be simplified, the size of the IGBT driving packaging structure is reduced, and the size of the IGBT driving packaging structure is smaller.
To sum up, the IGBT driving packaging structure provided by the embodiment of the application has stronger voltage endurance capability and smaller size.
Optionally, on the basis of the above embodiments, in an embodiment of the present application, a material of the magnetic core is nickel-zinc-ferrite, that is, a material of the first magnetic core, the second magnetic core, the third magnetic core, and the fourth magnetic core is nickel-zinc-ferrite, but the present application does not limit this, and the present application is specifically limited thereto. Wherein the resistivity of the nickel zinc ferrite is more than 1 x 10 8 Omega-m so that the resistivity of the magnetic core is not smallAt 1 x 10 8 Omega-m, thereby making the magnetic core a magnetic core with higher resistivity.
It should be noted that, as shown in fig. 4, the coil 22 includes a copper wire 221 and a first insulating layer 222 covering a surface of the copper wire 221 except for end faces thereof, that is, the first insulating layer 222 covers the surface of the copper wire 221 except for end faces at both ends thereof, where the first insulating layer 222 includes multiple insulating material layers made of modified polyurethane, and has a better insulating capability, so that the coil has a better insulating capability. It should be further noted that the connection between the coil and the power transmission element is realized by connecting two ends of a copper wire in the coil to the power transmission element respectively, and the connection between the copper wire in the coil and the power transmission element is realized by routing a circuit board, and for simplicity of the drawing, the metal connection wire is not shown in fig. 1; in addition, the insulation effect of the first insulation layer is related to the thickness thereof, and optionally, in an embodiment of the present application, the thickness of the first insulation layer ranges from 0 mm to 0.3mm, including a right endpoint value, but the embodiment of the present application does not limit this, which is determined as the case may be.
On the basis of the above embodiments, in an embodiment of the present application, as shown in fig. 5, the circuit board includes a first region 13, a second region 14, and a third region 15 located between the first region 13 and the second region 14, wherein the first region 13 is a high voltage region with a voltage higher than 1000V, the second region 14 is a lower region with a voltage lower than 1000V, and a second insulating layer 16 covering a surface of the third region 15 is provided on a surface of the third region 15 to insulate and separate the first region 13 from the second region 14. The voltage of the first region higher than 1000V means that the device in the first region is a high-voltage device, the voltage of the high-voltage device is higher than 1000V, the first region is a high-voltage side, the voltage of the second region lower than 1000V means that the device in the second region is a low-voltage device, the voltage of the low-voltage device is lower than 1000V, and the second region is a low-voltage side. It should be further noted that when a voltage difference exists between the two devices and the value of the voltage difference reaches the breakdown voltage of air, the air between the two devices is broken down, so that the two devices which are separated by the air are communicated, and the normal operation of the IGBT device is affected. The breakdown voltage of air is known to be small, and in order to avoid voltage breakdown between a device located on a high-voltage side and a device located on a low-voltage side in the IGBT driving packaging structure and influence the normal operation of the IGBT device, the distance between the high-voltage side and the low-voltage side is usually selected to be increased, but the increase of the distance between the high-voltage side and the low-voltage side inevitably increases the size of the IGBT driving packaging structure, and is not favorable for the application of the IGBT driving packaging structure.
In the embodiment of the present application, the circuit board of the IGBT package structure has a third region, and the third region further has a second insulating layer therein, for insulating and isolating the first region and the second region, that is, for insulating and separating the high-voltage side and the low-voltage side. It is known that the breakdown voltage of the insulating layer is generally higher than that of air, so that the breakdown voltage between the high-voltage side and the low-voltage side of the IGBT driving packaging structure is higher, the possibility of voltage breakdown is reduced, and the IGBT driving packaging structure has stronger voltage withstanding capability. In addition, in the embodiment of the present application, the breakdown voltage of the first insulating layer is greater than the breakdown voltage of air, so that for the same voltage difference between the high-voltage side and the low-voltage side, the distance between the high-voltage side and the low-voltage side of the IGBT driving packaging structure provided by the embodiment of the present application is smaller, thereby facilitating reduction of the size of the IGBT driving packaging structure, and making the size of the IGBT driving packaging structure smaller. It should be noted that, in other embodiments of the present application, the second insulating layer may cover the first region and the second region in addition to the surface of the third region, and also can insulate and isolate the first region and the second region, and devices in the first region and the second region are connected by circuit board traces, which does not affect the connection of the devices.
On the basis of the above-mentioned embodiments, in an embodiment of the present application, as shown in fig. 5, the power transmission element 11 includes a first power transmission element 111 and a second power transmission element 112, the first power transmission element 111 is located in the first region 13, and the second power transmission element is located in the second region 14; the transformer 20 is located in the first area 13 and located in the second area 14, that is, the transformer 20 is located in both the first area 13 and the second area 14, and the coil 22 includes a first coil and a second coil, the first coil is wound on the third magnetic core and connected to the first power transmission element 111, the second coil is wound on the first coil and connected to the second power transmission element 112, so that the transformer is respectively connected to the first power transmission element 111 and the second power transmission element 112 to respectively transmit power to the power electronic elements located in the first area and the second area through the first power transmission element 111 and the second power transmission element 112 to drive the power electronic elements to operate. It should be noted that, in the embodiment of the present application, the transformer is located in both the first region and the second region, so that the transformer has a portion located in the third region, and at this time, the second insulating layer covers a surface of a region other than the region where the transformer is located in the third region.
On the basis of the above embodiments, in an embodiment of the present application, as shown in fig. 5, the signal isolation chip 30 is located in the first region 13 and located in the second region 14, that is, the signal isolation chip 30 is located in both the first region 13 and the second region 14; as shown in fig. 6, the signal isolation chip 30 includes a first sub-chip 31 and a second sub-chip 32 sequentially arranged along the first direction, a third insulation layer 33 is disposed between the first sub-chip 31 and the second sub-chip 32, and the third insulation layer 33 is used for insulating and isolating the first sub-chip 31 and the second sub-chip 32; as shown in fig. 5, the signal transmission element 12 includes a first signal transmission element 121 and a second signal transmission element 122, the first signal transmission element 121 is located in the first region 13, that is, the first signal transmission element 121 is located on the high voltage side, and the second signal transmission element 122 is located in the second region 15, that is, the second signal transmission element 122 is located on the low voltage side; the first signal transmission element 121 includes a first signal transmission unit 171 and a first power transmission unit 181, the second signal transmission element 122 includes a second signal transmission unit 172 and a second power transmission unit 182, the first power transmission unit 181 is connected to the transformer 20, that is, the transformer 20 is connected to the first power transmission unit 181 at the high voltage side, the second power transmission unit 182 is connected to the transformer 20, that is, the transformer 20 is connected to the second power transmission unit 182 at the low voltage side, the first sub-chip 31 is connected to the first signal transmission unit 171, the second sub-chip 32 is connected to the second signal transmission unit 172, that is, the signal isolation chip 30 is connected to the first signal transmission unit 171 at the high voltage side and the second signal transmission unit 172 at the low voltage side, respectively, so that the first signal transmission unit 171 and the second signal transmission unit 122 can be respectively connected to the first signal transmission unit 171 and the second signal transmission unit 122 at the high voltage side And the power electronic elements on the side and the low-voltage side transmit signals to ensure that the IGBT driving packaging structure works normally. It should be noted that, in the embodiment of the present application, the signal isolation chip is located in both the first region and the second region, so that the signal isolation chip has a portion located in the third region, and at this time, the second insulating layer covers a surface of a region other than the region where the signal isolation chip is located in the third region.
In the embodiment of the application, a third insulating layer is arranged between the first sub-chip and the second sub-chip, so that the breakdown voltage between the first sub-chip and the second sub-chip is higher, and the IGBT driving packaging structure has higher voltage endurance capability. In addition, the breakdown voltage of the insulating material is higher than that of air, so that the breakdown voltage of the third insulating layer is higher than that of air, and further, compared with the voltage difference between the same first sub-chip and the same second sub-chip, the distance between the first sub-chip and the second sub-chip in the IGBT driving packaging structure provided by the embodiment of the application is smaller, the size of the IGBT driving packaging structure is reduced, and the size of the IGBT driving packaging structure is smaller.
Optionally, in an embodiment of the present application, a material of the second insulating layer is SiO 2 The material of the third insulating layer is SiO 2 However, the present embodiment is not limited thereto, and the details may be determined as the case may be.
In the embodiment of the present application, fig. 1 to 5 are only schematic structural diagrams of the IGBT driving package structure and components thereof, and the specific structure of the IGBT driving package structure is not limited.
Correspondingly, an embodiment of the present application further provides a preparation method of the IGBT driving package structure, as shown in fig. 6, the preparation method includes:
s1: as shown in fig. 1, a circuit board 10 is provided, and a power transmission element 11 and a signal transmission element 12 are formed on the surface of the circuit board 10;
s2: continuing to fig. 1, a transformer 20 is formed on the surface of the circuit board 10, wherein the transformer 20 comprises a magnetic core and a coil 22; as shown in fig. 2, the magnetic cores include a first magnetic core 211 and a second magnetic core 212 that are disposed opposite to each other, and further include a third magnetic core 213 and a fourth magnetic core 214, two ends of the third magnetic core 213 are respectively connected to the first magnetic core 211 and the second magnetic core 212, two ends of the fourth magnetic core 214 are respectively connected to the first magnetic core 211 and the second magnetic core 212, the third magnetic core 213 and the fourth magnetic core 214 are not connected, that is, the third magnetic core 213 and the fourth magnetic core 214 are not in contact with each other, wherein the resistivity of the magnetic cores is not lower than 1 × 10 8 Ω -m, i.e. the resistivity of the first 211, second 212, third 213 and fourth 214 cores is not less than 1 x 10 8 Omega-m, the resistivity is higher compared with the resistivity of the common manganese-zinc ferrite, so that the resistivity of the magnetic core is higher, and the magnetic core is higher in resistivity; the coil 22 is wound around the third core 223 and connected to the power transmission element 11, which isIn the middle, the coil 22 is made of a Fully Insulated Wire (FIW for short), and has a strong insulating ability;
s3: as shown in fig. 1, a signal isolation chip 30 is formed on the surface of the circuit board 10, the signal transmission element 12 includes a signal transmission unit 17 and a power transmission unit 18, the signal transmission unit 17 is connected to the signal isolation chip 30, and the power transmission unit 18 is connected to the transformer 20; it should be noted that, the signal isolation chip is connected to the signal transmission unit through a metal trace on the circuit board, the power transmission unit is connected to the transformer through a metal trace on the circuit board, and for simplicity of fig. 1, the metal connection line is not shown in fig. 1;
s4: forming a plastic package body 40, as shown in fig. 3, the plastic package body 40 covers the surface of the circuit board 10, and extends along a first direction to cover the transformer 20, the power transmission element 11, the signal isolation chip 30 and the signal transmission element 12, wherein the first direction is perpendicular to the surface of the circuit board 10. It should be noted that, it is known that the surface of the circuit board has a transformer, a signal isolation signal, a power transmission element, and a signal transmission element, so that the plastic package body covering the surface of the circuit board means that the plastic package body covers a surface of a region of the surface of the circuit board except for a region where the transformer, the signal isolation signal, the power transmission element, and the signal transmission element are located, and the IGBT driving package structure has a plurality of other devices located on the surface of the circuit board according to actual requirements besides the above devices, and the plastic package body also covers the other devices. It should be further noted that, the IGBT driving package structure is known to have a plurality of power electronic components located on the surface of the circuit board, the power transmission component is connected to the transformer and is configured to transmit power output by the transformer to other power electronic components through the power transmission component, and a signal transmission unit in the signal transmission component is connected to the signal isolation chip, and a power transmission unit in the signal transmission component is connected to the transformer and is configured to transmit signals output by the signal isolation chip to other power electronic components through the signal transmission component, so that the IGBT driving package structure can operate.
Specifically, in the embodiments of the present application, the manufacturing method includes forming a transformer including a magnetic core and a coil, wherein the magnetic core has a resistivity of not less than 1 x 10 8 Omega-m, the material of the magnetic core commonly used today is manganese-zinc ferrite, which has a resistance of about 1 x 10 3 Ω-m~1*10 5 Omega-m, the resistance of the magnetic core in the IGBT drive packaging structure provided by the embodiment of the application is higher than the resistivity of the magnetic core of manganese-zinc ferrite, so that the magnetic core can bear higher voltage, and further the magnetic core has stronger voltage endurance capability, so that the IGBT drive packaging structure has stronger voltage endurance capability. Moreover, the coil is made of a completely insulated wire FIW, and it is known that a completely insulated wire FIW has a relatively high insulating ability, so that the coil has a relatively high insulating ability, and when the coil is wound on the third magnetic core, a plurality of formed coils can be well insulated from each other, and voltage breakdown and communication between adjacent coils on the third magnetic core can be effectively avoided, so that the voltage withstanding ability of the IGBT driving package structure is effectively improved, that is, the IGBT driving package structure has a relatively high voltage withstanding ability. And because the insulating ability of the complete insulating wire is stronger, and the radius selection range is large, so that on the premise of ensuring the insulativity, the complete insulating wire with a smaller radius can be selected to prepare the coil, so that the radius of the coil is smaller, and a transformer with a smaller size can be supported, thereby being beneficial to reducing the size of the transformer.
In addition, the preparation method comprises the step of forming a plastic package body, wherein the plastic package body wraps the transformer, the signal isolation chip, the power transmission element and the signal transmission element, namely the plastic package body wraps the plurality of power electronic elements in the IGBT driving packaging structure, so that the plurality of power electronic elements in the IGBT driving packaging structure do not need to be individually plastically packaged, only the plastic package body is utilized for plastic package in a unified mode, the space occupied by the plurality of elements in the IGBT driving packaging structure can be reduced, the size of the IGBT driving packaging structure is further reduced, and the size of the IGBT driving packaging structure is smaller. Moreover, the plurality of power electronic elements in the IGBT driving packaging structure do not need to be subjected to independent plastic packaging, so that a complex connecting circuit is prevented from being formed outside each power electronic element packaging body, the power electronic elements can be connected with other elements or external circuits, the power electronic elements can be directly connected with other elements and external circuits through circuit wiring, the circuit of the IGBT driving packaging structure can be simplified, the size of the IGBT driving packaging structure is reduced, and the size of the IGBT driving packaging structure is smaller.
Optionally, on the basis of the above embodiment, in an embodiment of the present application, a material of the magnetic core is nickel-zinc-ferrite, that is, a material of the first magnetic core, the second magnetic core, the third magnetic core, and the fourth magnetic core is nickel-zinc-ferrite, and a material of the first insulating layer is epoxy resin, but the present application is not limited thereto, and is determined as the case may be. Wherein the resistivity of the nickel zinc ferrite is more than 1 x 10 8 Omega-m such that the resistivity of the magnetic core is not less than 1 x 10 8 Omega-m, thereby making the magnetic core a magnetic core with higher resistivity.
It should be noted that, as shown in fig. 4, the coil 22 includes a copper wire 221 and a first insulating layer 222 covering a surface of the copper wire 221 except for end faces thereof, that is, the first insulating layer 222 covers the surface of the copper wire 221 except for end faces at both ends thereof, where the first insulating layer 222 includes multiple insulating material layers made of modified polyurethane, and has a better insulating capability, so that the coil has a better insulating capability. It should be further noted that the connection between the coil and the power transmission element is realized by connecting two ends of a copper wire in the coil to the power transmission element respectively, and the connection between the copper wire in the coil and the power transmission element is realized by routing a circuit board, and for simplicity of the drawing, the metal connection wire is not shown in fig. 1; in addition, the insulation effect of the first insulation layer is related to the thickness thereof, and optionally, in an embodiment of the present application, the thickness of the first insulation layer ranges from 0 mm to 0.3mm, including a right endpoint value, but the embodiment of the present application does not limit this, which is determined as the case may be.
On the basis of the above embodiments, in an embodiment of the present application, as shown in fig. 5, the circuit board includes a first region 13, a second region 14, and a third region 15 located between the first region 13 and the second region 14, where the first region 13 is a high voltage region with a voltage higher than 1000V, and the second region 14 is a lower region with a voltage lower than 1000V, and the preparation method further includes:
s5: and forming a second insulating layer 16 on the surface of the third region 15 to cover the surface of the third region 15 so as to insulate and separate the first region 13 and the second region 14. The voltage of the first region higher than 1000V means that the device in the first region is a high-voltage device, the voltage of the high-voltage device is higher than 1000V, the first region is a high-voltage side, the voltage of the second region lower than 1000V means that the device in the second region is a low-voltage device, the voltage of the low-voltage device is lower than 1000V, and the second region is a low-voltage side. It should also be noted that when a voltage difference exists between two devices, and when the value of the voltage difference reaches the breakdown voltage of air, the air between the two devices is broken down, so that the two devices which are isolated are connected. It is known that the breakdown voltage of air is small, and in order to avoid voltage breakdown between a device located on a high-voltage side and a device located on a low-voltage side in the IGBT driving packaging structure and influence the normal operation of the IGBT device, the distance between the high-voltage side and the low-voltage side is usually selected to be increased, but the increase of the distance between the high-voltage side and the low-voltage side increases the size of the IGBT driving packaging structure, which is not favorable for the application of the IGBT driving packaging structure.
In an embodiment of the present application, the circuit board has a third region, and the preparation method includes forming a second insulating layer in the third region to insulate and separate the first region and the second region, i.e., insulate the high voltage side and the low voltage side. It is known that the breakdown voltage of the insulating layer is generally higher than that of air, so that the breakdown voltage between the high-voltage side and the low-voltage side of the IGBT driving packaging structure is higher, and the IGBT driving packaging structure has stronger voltage endurance capability. In addition, in the embodiment of the present application, the breakdown voltage of the first insulating layer is greater than the breakdown voltage of air, so that for the same voltage difference between the high-voltage side and the low-voltage side, the distance between the high-voltage side and the low-voltage side of the IGBT driving packaging structure provided by the embodiment of the present application is smaller, thereby facilitating reduction of the size of the IGBT driving packaging structure, and making the size of the IGBT driving packaging structure smaller. It should be noted that, in other embodiments of the present application, the second insulating layer may cover the first region and the second region in addition to the surface of the third region, so as to insulate and isolate the first region and the second region, and devices in the first region and the second region are connected through circuit board traces, so that connection of the devices is not affected, and when the second insulating layer covers the first region and the second region, the second insulating layer covers the surface of the first region and the second region except for the region covered by the devices.
On the basis of the above embodiments, in one embodiment of the present application, forming a power transmission element on a surface of the circuit board includes: as shown in fig. 5, a first power transmission element 111 is formed on the surface of the first region 13, and a second power transmission element 112 is formed on the surface of the second region 14; the transformer 20 is located in the first area 13 and located in the second area 14, that is, the transformer 20 is located in both the first area 13 and the second area 14, and the coil 22 includes a first coil and a second coil, the first coil is wound on the third magnetic core and connected to the first power transmission element 111, the second coil is wound on the first coil and connected to the second power transmission element 112, so that the transformer is respectively connected to the first power transmission element 111 and the second power transmission element 112 to respectively transmit power to the power electronic elements located in the first area and the second area through the first power transmission element 111 and the second power transmission element 112 to drive the power electronic elements to operate.
On the basis of the above-described embodiments, in one embodiment of the present application, forming the signal transmission element on the surface of the circuit board includes: as shown in fig. 5, a first signal transmission element 121 is formed on the surface of the first region 13, the first signal transmission element 121 includes a first signal transmission unit 171 and a first power transmission unit 132, and the first signal transmission element 121 is located in the first region 13, that is, the first signal transmission element 121 is located on the high voltage side; forming a second signal transmission element 122 on the surface of the second region 14, wherein the second signal transmission element 122 includes a second signal transmission unit 141 and a second power transmission unit 182, and the second signal transmission element 122 is located in the second region 15, that is, the second signal transmission element 122 is located on the low voltage side; the signal isolation chip 30 is located in the first region 13 and located in the second region 14, that is, the signal isolation chip 30 is located in both the first region 13 and the second region 14. As shown in fig. 6, the signal isolation chip 30 includes a first sub-chip 31 and a second sub-chip 32 sequentially arranged along the first direction, a third insulation layer 33 is disposed between the first sub-chip 31 and the second sub-chip 32, and the third insulation layer 33 is used for insulating and isolating the first sub-chip 31 and the second sub-chip 32. The first sub-chip 31 is connected to the first signal transmission unit 171, the second sub-chip 32 is connected to the second signal transmission unit 172, that is, the signal isolating chip 30 is connected to a first signal transmission unit 171 on a high voltage side and a second signal transmission unit 172 on a low voltage side, respectively, the first power transmission unit 181 is connected to the transformer 20, that is, the transformer 20 is connected to the first power transmission unit 181 at the high voltage side, the second power transmission unit 182 is connected to the transformer 20, that is, the transformer 20 is connected to the second power transmission unit 182 at the low voltage side, so that signals can be transmitted to the power electronic components at the high voltage side and the low voltage side through the first signal transmission element 121 and the second signal transmission element 122, respectively, to ensure that the IGBT driving package structure operates normally.
On the basis of the above embodiment, in the embodiment of the present application, the preparation method includes forming a third insulating layer between the first sub-chip and the sub-chip, so that a breakdown voltage between the first sub-chip and the second sub-chip is higher, and thus the IGBT driving package structure has a stronger voltage withstanding capability. In addition, the breakdown voltage of the insulating material is higher than that of air, so that the breakdown voltage of the third insulating layer is higher than that of air, and further, compared with the voltage difference between the same first sub-chip and the same second sub-chip, the distance between the first sub-chip and the second sub-chip in the IGBT driving packaging structure provided by the embodiment of the application is smaller, the size of the IGBT driving packaging structure is reduced, and the size of the IGBT driving packaging structure is smaller.
Optionally, in an embodiment of the present application, a material of the second insulating layer is SiO 2 The material of the third insulating layer is SiO 2 However, the present embodiment is not limited thereto, and the details may be determined as the case may be.
To sum up, the embodiment of the present application provides an IGBT driving package structure and a manufacturing method thereof, where the package structure includes a circuit board, and a power transmission element, a signal transmission element, a transformer, a signal isolation chip, and a plastic package body on the surface of the circuit board, where the transformer includes a magnetic core and a coil, and a resistivity of the magnetic core is not lower than 1 × 10 8 And omega-m, the magnetic core is a high-resistivity magnetic core, so that the magnetic core can bear higher voltage, and further has stronger voltage endurance capability, so that the IGBT driving packaging structure has stronger voltage endurance capability. The coil is a completely insulated wire FIW with good insulation performance, so that when the coil is wound on the third magnetic core, a plurality of formed coils are well insulated, and voltage between adjacent coils on the third magnetic core can be effectively avoidedAnd breakdown is performed, so that the voltage withstanding capability of the IGBT driving packaging structure can be improved, and the IGBT driving packaging structure has stronger voltage withstanding capability. Moreover, since the size selection range of the fully insulated wire FIW is wide, a transformer with a smaller size is supported, and the coil is the fully insulated wire FIW, the size of the transformer can be facilitated, and the size of the IGBT driving packaging structure can be further reduced.
In addition, the IGBT drive packaging structure's that this application embodiment provided plastic-sealed body cladding transformer, signal isolation chip, power transmission component and signal transmission component, promptly the plastic-sealed body cladding a plurality of power electronic component among the IGBT drive packaging structure make a plurality of power electronic component among the IGBT drive packaging structure do not need independent plastic envelope, only need utilize the unified plastic envelope of plastic-sealed body can, can reduce the space that a plurality of components in the IGBT drive packaging structure occupy, make IGBT drive packaging structure size is less. Moreover, the plurality of power electronic elements in the IGBT driving packaging structure do not need to be subjected to independent plastic packaging, and the circuit of the IGBT driving packaging structure can be simplified, so that the size of the IGBT driving packaging structure is reduced, and the size of the IGBT driving packaging structure is smaller.
All parts in the specification are described in a mode of combining parallel and progressive, each part is mainly described to be different from other parts, and the same and similar parts among all parts can be referred to each other.
In the above description of the disclosed embodiments, features described in various embodiments in this specification can be substituted for or combined with each other to enable those skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. An IGBT drive packaging structure, comprising:
the circuit board is provided with a power transmission element and a signal transmission element which are positioned on the surface of the circuit board;
be located the transformer on circuit board surface, the transformer includes magnetic core and coil, the magnetic core is including relative first magnetic core and the second magnetic core that sets up, still includes third magnetic core and fourth magnetic core, third magnetic core both ends respectively with first magnetic core with the second magnetic core links to each other, fourth magnetic core both ends respectively with first magnetic core with the second magnetic core links to each other, the third magnetic core with the fourth magnetic core is not continuous, wherein, first magnetic core, the second magnetic core the resistivity of third magnetic core with the fourth magnetic core all is not less than 1 10 8 Omega-m; the coil is wound on the third magnetic core and is connected with the power transmission element, wherein the coil is made of a completely insulated wire;
the signal transmission element comprises a power transmission unit and a signal transmission unit, the signal transmission unit is connected with the signal isolation chip, and the power transmission unit is connected with the transformer;
the plastic package body covers the surface of the circuit board, extends along a first direction and covers the transformer, the power transmission element, the signal isolation chip and the signal transmission element, wherein the first direction is perpendicular to the surface of the circuit board.
2. The package structure of claim 1, wherein the material of the magnetic core is nickel-zinc-ferrite; the coil includes the copper line and covers the first insulating layer on copper line surface except its terminal surface, the value range of first insulating layer thickness is 0~0.3mm, including right end point value.
3. The package structure of claim 1, wherein the circuit board comprises a first region, a second region and a third region located between the first region and the second region, wherein the first region is a high voltage region with a voltage greater than 1000V, the second region is a low voltage region with a voltage lower than 1000V, and the surface of the third region has a second insulating layer covering the surface of the third region, and the first region and the second region are insulated and isolated.
4. The package structure of claim 3, wherein the power transfer element comprises a first power transfer element and a second power transfer element, the first power transfer element being located in the first region, the second power transfer element being located in the second region;
the transformer is positioned in the first area and the second area, the coil comprises a first coil and a second coil, and the first coil is wound on the third magnetic core and is connected with the first power transmission element; the second coil is wound around the first coil and connected to the second power transmission element.
5. The package structure according to claim 4, wherein the signal transmission element comprises a first signal transmission element and a second signal transmission element, the first signal transmission element is located in the first region, the second signal transmission element is located in the second region, the first signal transmission element comprises a first signal transmission unit and a first power transmission unit, the second signal transmission element comprises a second signal transmission unit and a second power transmission unit, the first power transmission unit is connected with the transformer, and the second power transmission unit is connected with the transformer;
the signal isolation chip is located in the first area and located in the second area, the signal isolation chip comprises a first sub-chip and a second sub-chip which are arranged along the first direction, a third insulating layer is arranged between the first sub-chip and the second sub-chip and used for insulating and isolating the first sub-chip and the second sub-chip, the first signal transmission unit is connected with the first sub-chip, and the second signal transmission unit is connected with the second sub-chip.
6. The package structure of claim 5, wherein the material of the second insulating layer is SiO 2 The material of the third insulating layer is SiO 2 。
7. A manufacturing method of an IGBT driving packaging structure is characterized by comprising the following steps:
providing a circuit board, and forming a power transmission element and a signal transmission element on the surface of the circuit board;
the transformer is formed on the surface of the circuit board and comprises a magnetic core and a coil, wherein the magnetic core comprises a first magnetic core and a second magnetic core which are oppositely arranged, and further comprises a third magnetic core and a fourth magnetic core, two ends of the third magnetic core are respectively connected with the first magnetic core and the second magnetic core, two ends of the fourth magnetic core are respectively connected with the first magnetic core and the second magnetic core, the third magnetic core is not connected with the fourth magnetic core, wherein the resistivity of the first magnetic core, the resistivity of the second magnetic core, the resistivity of the third magnetic core and the resistivity of the fourth magnetic core are not lower than 1 x 10 8 Omega-m; the coil is wound on the third magnetic core and is connected with the power transmission element, wherein the coil is made of a completely insulated wire;
forming a signal isolation chip on the surface of the circuit board, wherein the signal transmission element comprises a power transmission unit and a signal transmission unit, the signal transmission unit is connected with the signal isolation chip, and the power transmission unit is connected with the transformer;
and forming a plastic package body, wherein the plastic package body covers the surface of the circuit board, extends along a first direction and covers the transformer, the power transmission element, the signal isolation chip and the signal transmission element, and the first direction is vertical to the surface of the circuit board.
8. The method of manufacturing according to claim 7, wherein the circuit board includes a first region, a second region and a third region located between the first region and the second region, wherein the first region is a high voltage region having a voltage greater than 1000V, and the second region is a low voltage region having a voltage lower than 1000V; the method further comprises the following steps:
and forming a second insulating layer covering the surface of the third region on the surface of the third region, and insulating and isolating the first region and the second region.
9. The method of claim 8, wherein forming a power transfer element on the surface of the circuit board comprises:
forming a first power transfer device in the first region;
forming a second power transfer device in the second region;
wherein the transformer is located in the first area and located in the second area, the coil includes a first coil and a second coil, and the first coil is wound on the third magnetic core and connected to the first power transmission element; the second coil is wound around the first coil and connected to the second power transfer element.
10. The method of manufacturing according to claim 8, wherein forming the signal transmission element includes:
forming a first signal transmission element in the first region, the first signal transmission element including a first signal transmission unit and a first power transmission unit;
forming a second signal transmission element in the second region, the second signal transmission element including a second signal transmission unit and a second power transmission unit;
the signal isolation chip is located in the first area and located in the second area, the signal isolation chip comprises a first sub-chip and a second sub-chip which are arranged along the first direction, a third insulating layer is arranged between the first sub-chip and the second sub-chip and used for insulating and isolating the first sub-chip and the second sub-chip, the first signal transmission unit is connected with the first sub-chip, the second signal transmission unit is connected with the second sub-chip, the first power transmission unit is connected with the transformer, and the second power transmission unit is connected with the transformer.
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