CN114551297A - Substrate cooling and fixing device of etching machine - Google Patents
Substrate cooling and fixing device of etching machine Download PDFInfo
- Publication number
- CN114551297A CN114551297A CN202210111785.4A CN202210111785A CN114551297A CN 114551297 A CN114551297 A CN 114551297A CN 202210111785 A CN202210111785 A CN 202210111785A CN 114551297 A CN114551297 A CN 114551297A
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- Prior art keywords
- substrate
- cooling
- chassis
- fixing
- area
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- 239000000758 substrate Substances 0.000 title claims abstract description 101
- 238000001816 cooling Methods 0.000 title claims abstract description 42
- 238000005530 etching Methods 0.000 title claims abstract description 19
- 239000007789 gas Substances 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 239000000112 cooling gas Substances 0.000 claims abstract description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 2
- 238000006557 surface reaction Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 6
- 239000004519 grease Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a substrate cooling and fixing device of an etching machine, which comprises a chassis, a substrate and movable fixing pins, wherein the substrate is fixed on the chassis; the chassis comprises a clamping area and a sinking cooling area, and the clamping area ensures that the surface of the substrate is parallel to the upper part of the chassis; a plurality of small holes are uniformly distributed at the bottom of the sinking cooling area, and the cooling gas can continuously and circularly take away the redundant heat generated by the upper substrate through the small holes in the closed area at the bottom in the etching work; the movable fixing foot consists of an L-shaped pressing block and a fixing screw, the L-shaped edge of the pressing block is tightly attached to the substrate to play a role in fixing the substrate, the position of the fixing screw is adjustable, and the fixing screw is matched with a preset screw hole on the chassis to fix the substrates in different shapes; the invention leads in flowing gas by utilizing the air holes to stabilize the temperature of the reaction environment of the substrate, and the movable fixing feet can be combined with different positioning holes of the chassis to fix the substrate, thereby being suitable for substrates with various shapes and sizes and solving the problems that the prior substrate fixing device can not be effectively cooled and has single fixing type.
Description
Technical Field
The invention relates to the field of semiconductor processing and etching, in particular to a substrate cooling and fixing device of an etching machine.
Background
At present, the common substrate fixing device generally adopts metal contact conduction and coats heat conduction silicone grease to control the temperature of the substrate. The contact conduction has the characteristics of poor uniformity and poor conductivity due to limited actual contact surface in a microscopic region. The heat conduction contact area can be effectively increased by coating the silicone grease, but the problem of polluting the bottom of the substrate cannot be avoided, and air mixed in the silicone grease is easy to gather into bubbles under a vacuum environment to influence the uniformity of heat conduction. Inert gas heat conduction is an efficient and pollution-free heat conduction technology, because gas molecules can be uniformly distributed on each contact surface in a closed space after being pressurized, and the temperature of a contact object can be kept in a very stable range through air circulation.
In semiconductor processing links, such as etching links and the like, high-energy particles are often required to bombard photoresist on the surface of a substrate to generate a specific chemical reaction, and the generated huge thermal effect cannot be ignored. If waste heat generated on the surface of the substrate cannot be conducted out in time, the reaction cannot be carried out normally, the pattern on the surface of the photoresist is polluted if the waste heat is not conducted out in time, and the photoresist is melted if the pattern is heavy, and even the substrate is heated and cracked. The inert gas heat conduction technology is very suitable for being applied to a semiconductor etching process due to the characteristics of small pollution, high efficiency and the like. In the semiconductor processing link, the sizes of the substrates generally tend to be diversified, and when the substrate with one specification is replaced, the corresponding clamping device needs to be replaced, so that the efficiency cannot be improved, and the cost is increased. There is a need for a substrate cooling fixture that can accommodate two or more sizes of substrates simultaneously.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: 1) at present, metal contact conduction is usually adopted for heat conduction in semiconductor processing, and the problems of uneven heat conduction and low conduction efficiency exist; 2) in the semiconductor processing, the silicon grease coated inside is adopted for conduction, so that the problems of substrate pollution and easy bubble generation in a vacuum environment exist; 3) the common fixing device can only deal with a single-size substrate, and the fixture needs to be frequently replaced in the face of substrates with two or more specifications, so that the requirements of convenience and high efficiency cannot be met. The invention aims to provide a substrate cooling and fixing device which can adapt to the fixing of two or more substrates in an etching process and has good heat conduction performance.
In order to solve the technical problem, the invention provides a substrate cooling and fixing device of an etching machine, which comprises a chassis, a substrate and a movable fixing pin, wherein:
the chassis comprises a clamping area and a sinking cooling area, and the outer contour of the chassis is adapted to the outer size of an external mechanical clamp; the clamping area is used for placing the substrate, and the clamping area can be designed into different shapes according to the shape and specification of the required substrate, so that the surface of the substrate is kept parallel to the upper part of the chassis and cannot shake randomly; the sinking cooling area is used for filling circulating gas to maintain the reaction temperature of the substrate; a plurality of small holes are uniformly distributed at the bottom of the sinking cooling area, and during etching work, cooling gas can continuously and circularly take away redundant heat generated by the upper substrate in a bottom closed area through the small holes, so that the stability of the reaction condition of the surface of the substrate is ensured;
the substrate is a substrate to be etched, and the photoresist is coated on the substrate;
the movable fixed foot is made of aluminum alloy or polytetrafluoroethylene and is in close contact with the substrate, so that the substrate is not influenced by gas pressure and keeps stable in position, and the movable fixed foot can be firmly fixed on the chassis through a screw; the movable fixing foot consists of an L-shaped pressing block and a fixing screw, the L-shaped edge of the pressing block is tightly attached to the substrate to fix the substrate, the position of the fixing screw is adjustable, and the fixing screw is matched with a preset screw hole in the chassis to fix substrates in different shapes.
Further, the clamping area of the base plate can be the same or similar to the substrate, and the caliber of the clamping area needs to be larger than that of the placed substrate.
Furthermore, the bottom of the sinking cooling area of the chassis is provided with a certain number of small holes for the gas to enter and exit.
Further, the width of the sinking cooling zone of the base plate should be slightly less than the size of the substrate, and the depth thereof is determined by the required cooling gas flow rate, and the gas flow rate is adjusted according to the heat load generated during the operation of the substrate.
Further, the circulating gas filled in the sinking cooling zone of the chassis is preferably helium (He) or nitrogen (N)2)。
Further, the substrate may be a standard quartz or silicon wafer, with 6 or 8 inches being generally preferred.
Furthermore, the movable fixing foot is made of aluminum alloy or polytetrafluoroethylene, and the substrate is pressed on the clamping area of the chassis from one side and can be tightly fixed with the chassis by using a screw.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a substrate cooling and fixing device which can realize stable temperature control of reaction by means of rapid circulation of inert gas under the conditions of high-energy particle bombardment such as etching and the like, and effectively avoids pollution of direct contact or coating of silicone grease on a substrate. Meanwhile, the chassis can be provided with a plurality of layers of clamping areas with different sizes and shapes, and the movable fixing feet are arranged by matching with the corresponding preset positioning holes, so that the replacement requirements of substrates with two or more sizes can be met, and the whole device has the characteristics of convenience in use, various adaptability and good cooling effect.
Drawings
FIG. 1 is a front view of a first embodiment of a substrate cooling fixture of an etcher in accordance with the present invention;
FIG. 2 is a top view of the substrate cooling fixture of the etcher of FIG. 1;
FIG. 3 is a bottom view of the substrate cooling fixture of the etcher of FIG. 1;
in the figure: 1. a chassis; 11. a clamping area; 12. a sinking cooling zone; 13. a small hole; 2. a substrate; 3. a movable fixed foot;
Detailed Description
The following detailed description of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
As shown in FIG. 1, the present embodiment provides an etcher substrate cooling fixture for substrates made of standard 8-inch silicon wafers. The method comprises the following steps: a chassis 1, a substrate 2 and a movable fixed foot 3.
Specifically, the chassis 1 is made of an aluminum alloy material with good heat conduction and light weight, the clamping area 11 and the sinking cooling area 12 are located in the middle of the chassis 1, and the size of the sinking cooling area 12 is slightly smaller than that of the clamping area 11. For a substrate with a poor surface finish or a patterned surface, the contact area of the clamping area 11 and the substrate may be provided with a recess in which a sealing collar may be placed. The sinking cooling area 12 is positioned in the center of the clamping area, the size of the sinking cooling area is slightly smaller than that of the clamping area, and small holes 13 are uniformly distributed at the bottom of the sinking cooling area and communicated with the outside, so that the inert cooling gas can conveniently enter and exit.
Specifically, the substrate 2 is an 8-inch standard circular silicon wafer with a thickness of 2mm, and one side is coated with a photoresist with a certain thickness according to requirements, and a corresponding pattern is generated through exposure and development. The other side faces the chassis 1 and is fixed on the clamping area 11 by a movable fixing foot 3. Excess heat is removed during the reaction by an inert gas, preferably helium (He) or nitrogen (N), circulating in the sink cooling zone 122) The temperature of the substrate 2 is ensured to be stable.
Specifically, the movable fixing leg 3 is formed by processing aluminum alloy, and the surface of the movable fixing leg is anodized, wherein the pressing block part contacting with the substrate can be of a rectangular structure or other regular structures. The contact section of the movable fixed foot 3 and the substrate can be added with a high-temperature-resistant silica gel pad as required, so that the damage to the rubber surface of the substrate can be effectively prevented.
The movable fixing foot 3 consists of an L-shaped pressing block and a fixing screw, the L-shaped edge of the pressing block is tightly attached to the substrate to play a role in fixing the substrate 2, the position of the fixing screw is adjustable, and the fixing screw is matched with a preset screw hole of the chassis 1 to fix the substrates 2 in different shapes.
Specifically, the aperture 13 is a standard circular shape with a diameter of 2 mm. It should be noted that the positions of the holes on the base plate 1 are specially designed and distributed in a multilayer central circle symmetry manner, the distance between every two adjacent layers is 60-75mm, the density of the small holes can be flexibly adjusted according to the cooling pressure of the back helium and the heat generated in actual work, the uniformity of the integral heat conduction of the base plate is effectively improved, and the repeatability and the stability of the etched silicon wafer are ensured.
Finally, the above description is only exemplary of the present invention and should not be taken as limiting the scope of the invention, and any modifications, equivalents, improvements and the like that are within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. The substrate cooling and fixing device of the etching machine is characterized by comprising a chassis (1), a substrate (2) and a movable fixing foot (3), wherein:
the chassis (1) comprises a clamping area (11) and a sinking cooling area (12), and the outer contour of the chassis (1) is adapted to the outer size of an external mechanical clamp; the clamping area (11) is used for placing the substrate (2), the clamping area (11) can be designed into different shapes according to the shape and specification of the required substrate (2), the surface of the substrate (2) is ensured to be parallel to the upper part of the chassis (1), and the substrate cannot shake randomly; the sinking cooling area (12) is used for filling circulating gas to maintain the reaction temperature of the substrate (2); a plurality of small holes (13) are uniformly distributed at the bottom of the sinking cooling area (12), and during etching work, cooling gas can continuously and circularly take away redundant heat generated by the upper substrate (2) through the small holes (13) in a closed area at the bottom so as to ensure the stability of the surface reaction condition of the substrate (2);
the substrate (2) is a substrate to be etched, and the photoresist is coated on the substrate;
the movable fixed foot (3) is made of aluminum alloy or polytetrafluoroethylene and is tightly contacted with the substrate (2), so that the substrate (2) is not influenced by gas pressure to keep stable in position, and the movable fixed foot (3) can be firmly fixed on the chassis (1) by a screw; the movable fixing foot (3) is composed of an L-shaped pressing block and a fixing screw, the L-shaped edge of the pressing block is tightly attached to the substrate to fix the substrate (2), the position of the fixing screw is adjustable, and the fixing screw is preset on the matching chassis (1) to fix the substrates (2) in different shapes.
2. The substrate cooling and fixing device of the etching machine as claimed in claim 1, characterized in that the clamping area (11) of the base plate (1) can be the same or similar to the substrate (2), and the caliber of the clamping area needs to be larger than that of the placed substrate (2).
3. The substrate cooling and fixing device of the etching machine as claimed in claim 1, characterized in that the bottom of the sinking cooling zone (12) of the base plate (1) is provided with a number of small holes (13) for gas to enter and exit.
4. A substrate cooling fixture for etching machines according to claim 1, characterized in that the width of the sunken cooling zone (12) of the base plate (1) is slightly smaller than the size of the substrate (2) and its depth is determined by the required cooling gas flow rate, which is adjusted according to the thermal load generated during the operation of the substrate (2).
5. The substrate cooling and fixing device of etching machine as claimed in claim 1, characterized in that the sinking cooling zone (12) of the base plate (1) is filled with a circulating gas, preferably helium (He) or nitrogen (N)2)。
6. An etcher substrate cooling fixture as claimed in claim 1, characterized in that the substrate (2) is a standard quartz or silicon wafer, preferably 6 or 8 inches.
7. The substrate cooling and fixing device for etching machine as claimed in claim 1, characterized in that the movable fixing foot (3) is made of aluminum alloy or polytetrafluoroethylene, and one side of the movable fixing foot presses the substrate (2) on the chassis clamping area (11) and can be tightly fixed with the chassis (1) by screws.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210111785.4A CN114551297A (en) | 2022-01-29 | 2022-01-29 | Substrate cooling and fixing device of etching machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210111785.4A CN114551297A (en) | 2022-01-29 | 2022-01-29 | Substrate cooling and fixing device of etching machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114551297A true CN114551297A (en) | 2022-05-27 |
Family
ID=81674072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210111785.4A Pending CN114551297A (en) | 2022-01-29 | 2022-01-29 | Substrate cooling and fixing device of etching machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114551297A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010098012A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Etching equipment and etching method |
| JP2012146710A (en) * | 2011-01-06 | 2012-08-02 | Sharp Corp | Wafer fixing device and exposure device |
-
2022
- 2022-01-29 CN CN202210111785.4A patent/CN114551297A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010098012A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Etching equipment and etching method |
| JP2012146710A (en) * | 2011-01-06 | 2012-08-02 | Sharp Corp | Wafer fixing device and exposure device |
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Application publication date: 20220527 |