CN114530762A - Semiconductor optical amplifier chip - Google Patents
Semiconductor optical amplifier chip Download PDFInfo
- Publication number
- CN114530762A CN114530762A CN202210151942.4A CN202210151942A CN114530762A CN 114530762 A CN114530762 A CN 114530762A CN 202210151942 A CN202210151942 A CN 202210151942A CN 114530762 A CN114530762 A CN 114530762A
- Authority
- CN
- China
- Prior art keywords
- buried
- waveguide
- layer
- chip
- active region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 74
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 3
- 239000013307 optical fiber Substances 0.000 abstract description 18
- 238000010168 coupling process Methods 0.000 abstract description 16
- 230000008878 coupling Effects 0.000 abstract description 15
- 238000005859 coupling reaction Methods 0.000 abstract description 15
- 230000003321 amplification Effects 0.000 abstract description 12
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 12
- 238000002310 reflectometry Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000009021 linear effect Effects 0.000 description 2
- 230000009022 nonlinear effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1014—Tapered waveguide, e.g. spotsize converter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a semiconductor optical amplifier chip, which comprises the following components in sequential stacking arrangement: a lower (N-face) electrode layer, a substrate, a buffer layer, a passive waveguide layer, a buried heterogeneous active region, a buried inclined waveguide layer, a cap layer and an upper (P-face) electrode layer; the buried sloped waveguide layer includes: a strip-shaped inclined waveguide and a conical inclined waveguide, wherein the conical inclined waveguide is optically connected with the strip-shaped inclined waveguide. Because the strip-shaped inclined waveguide and the tapered inclined waveguide with gradually changed width in the buried inclined waveguide layer are obliquely arranged and have a certain inclination angle, the resonance of the light wave in the semiconductor optical amplifier is avoided, and the light wave is only subjected to single-pass optical gain amplification. The tapered angled waveguide is tapered in width to have a larger lateral dimension at the end face of the chip, resulting in a larger mode field overlap of the semiconductor optical amplifier and the optical fiber, and thus greater coupling efficiency and alignment tolerance.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectron, and particularly relates to a semiconductor optical amplifier chip.
Background
Semiconductor Optical Amplifiers (SOA) have been developed with the advent of semiconductor lasers, which are structurally very similar to semiconductor lasers and do not differ substantially in their operating principle, all of which are excited radiation by photons and amplified. The most important difference between SOA and laser is that SOA is used to amplify externally input photons, usually with two ports for input and output; semiconductor lasers, in turn, amplify photons generated by internal spontaneous emission and typically have only one output port. The SOA has the characteristics of multiple functions, small volume, low cost, easy integration with other photoelectric devices, and the like, has unique and important functions in optical signal amplification, optical signal processing and optical switching applications, and is a key device in recent and next-generation all-optical networks.
In the prior art, an SOA mostly adopts a wide contact type structure, a waveguide generally adopts ridge waveguide or bent waveguide and other modes to reduce noise and optical feedback, and the problems of low gain efficiency, poor lateral beam quality and the like exist. Thus, the difference in the magnitude and shape of the intrinsic mode field between the SOA and the circumscribed optical fiber results in a large mode mismatch between the two, very low coupling efficiency between the two, and small alignment tolerances.
Disclosure of Invention
In view of the above problems, the present invention provides a semiconductor optical amplifier chip, which can improve the gain of a semiconductor optical amplifier and improve the coupling efficiency and alignment tolerance between the semiconductor optical amplifier and an optical fiber.
To achieve the above object, the present invention provides a semiconductor optical amplifier chip, comprising: the device comprises the following components which are sequentially stacked:
the semiconductor device comprises a lower electrode layer, a substrate, a buffer layer, a passive waveguide layer, a buried heterogeneous active region, a buried inclined waveguide layer, a cover layer and an upper electrode layer;
wherein the buried sloped waveguide layer includes: a strip-shaped inclined waveguide; and a tapered inclined waveguide optically connected to the strip-shaped inclined waveguide.
According to an embodiment of the present invention, wherein the angle between the buried inclined waveguide layer and the normal of the end face of the semiconductor optical amplifier chip is an inclination angle α, α being in the range of 2 to 15 °.
According to the embodiment of the invention, the length of the tapered inclined waveguide is L1, wherein the range of L1 is 500-800 μm; the length of the strip-shaped inclined waveguide is L2, and the range of L2 is 50-200 μm.
According to the embodiment of the invention, the width of the wide end face of the tapered inclined waveguide is W1, W1 is set to be 5-10 μm, the width of the end face of the strip-shaped inclined waveguide is W2, the range of W2 is 3-8 μm, and the difference between W1 and W2 is greater than or equal to 2 μm.
According to an embodiment of the present invention, wherein the buried heterogeneous active region is a strained multi-quantum well structure, the number of strained multi-quantum wells is at least 5.
According to the embodiment of the invention, the upper electrode layer is provided with a downward convex part, and silicon oxide isolating layers are distributed on two sides of the convex part;
the passive waveguide layer, the buried heterogeneous active region and the buried inclined waveguide layer form a ridge structure, and limiting layers are distributed on two sides of the ridge structure.
According to an embodiment of the invention, wherein the confinement layer has a relative refractive index difference with the material of the buried heterogeneous active region.
According to an embodiment of the invention, wherein the material of the cap layer and the material of the buried heterogeneous active region have a relative refractive index difference therebetween.
According to an embodiment of the present invention, wherein the buried heterogeneous active region partially overlaps the buried sloped waveguide layer, a portion of the buried sloped waveguide layer extending outside the buried heterogeneous active region overlaps the passive waveguide layer.
According to the embodiment of the invention, the end face of the chip is plated with the multilayer anti-reflection dielectric film.
According to the semiconductor optical amplifier chip of the above embodiment of the present invention, since the strip-shaped inclined waveguide and the tapered inclined waveguide in the buried inclined waveguide layer are obliquely arranged and have a certain inclination angle, and the buried inclined waveguide layer includes the strip-shaped inclined waveguide and the tapered inclined waveguide with gradually changed width, the resonance of the optical wave in the semiconductor optical amplifier is avoided, so that the optical gain amplification of the optical wave only occurs in a single pass. The tapered angled waveguide is tapered in width to have a larger lateral dimension at the end face of the chip, resulting in a larger mode field overlap of the semiconductor optical amplifier and the optical fiber, and thus greater coupling efficiency and alignment tolerance.
According to the semiconductor optical amplifier chip disclosed by the embodiment of the invention, the near field and far field characteristics of the semiconductor optical amplifier are improved and the coupling efficiency with the optical fiber is improved under the action of the strip inclined waveguide and the conical inclined waveguide in the buried inclined waveguide layer; the optical wave extends to the passive waveguide layer under the buried heterogeneous active region under the action of the buried inclined waveguide layer, the longitudinal size of the near-field light spot is changed, the near-field light spot on the light-emitting surface is matched with the mode field radius of the optical fiber, and the optical fiber has high coupling efficiency.
Drawings
FIG. 1 schematically illustrates a perspective view of a semiconductor optical amplifier chip according to an embodiment of the present invention;
FIG. 2 schematically illustrates an end view of a semiconductor optical amplifier chip portion structure in accordance with an embodiment of the present invention;
FIG. 3 schematically illustrates a perspective view of a buried slanted waveguide layer of a semiconductor optical amplifier chip, in accordance with an embodiment of the present invention;
FIG. 4 schematically illustrates a buried slanted waveguide layer plan view of a semiconductor optical amplifier chip according to an embodiment of the present invention;
[ reference numerals ]
10-a lower electrode layer;
20-a substrate;
30-a buffer layer;
40-a passive waveguide layer;
50-buried heterogeneous active region;
60-buried sloped waveguide layer; 601-a strip-shaped slanted waveguide; 602-a tapered slanted waveguide;
70-a cap layer;
80-an upper electrode layer; 81-a silicon oxide isolation layer;
90-confinement layer.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The application of the SOA is mainly embodied in the following two aspects: all-optical signal processing utilizing SOA nonlinear effects, the all-optical signal processing comprising: all-optical wavelength conversion, all-optical logic, all-optical cache, all-optical regeneration, all-optical switch, and the like; the transmission amplification of optical signals by using the SOA linear effect includes pre-amplification of optical signals before a receiver, power amplification after a transmitter and line amplification in a transmission link, and suppresses the nonlinear effect as much as possible.
The SOAs can be mainly divided into two major categories, one category is Fabry-Perot SOAs (FP-SOA), which directly uses the reflectivity of about 30% of the reflection of a cleavage plane as an FP cavity to lead photons to be amplified and output for many times in an active region; the other type is a traveling wave SOA (TW-SOA), which is to plate anti-reflection films on two end faces of the SOA to reduce the reflection of photons on the end faces and realize the single-pass amplification of an input optical signal. Compared with FP-SOA, TW-SOA has smaller noise figure and gain fluctuation, larger saturation output power and gain bandwidth, and has more practical value in optical fiber communication.
In high speed optical communication systems, a large linear gain is desirable when the SOA is used to compensate for the loss of the passive devices. Theoretically, as long as the injection current of the SOA is large enough and the active region is long enough, sufficient gain can be obtained. However, the larger the gain of the signal is, the more carriers need to be consumed by the input optical signal in the active region, and since the carrier recovery in the active region is limited by the recovery time, the carriers cannot be supplemented in a short time, so that the gain of the SOA is rapidly reduced, and the gain saturation phenomenon occurs. Gain saturation reduces the gain of the SOA and reduces the saturated input and saturated output power. In addition, too high SOA gain also increases gain ripple and narrows bandwidth. The increase of the ripple brings instability of the system, and the output signal is distorted.
With the gradual maturity of advanced epitaxial growth equipment such as Metal Organic Chemical Vapor Deposition (MOCVD) and Molecular Beam Epitaxy (MBE), epitaxial processes and technologies such as low-temperature epitaxial growth, low-pressure epitaxial growth and heteroepitaxial growth are newly developed. The improvement of the epitaxial growth equipment and the technology greatly enhances the capability of accurately controlling the growth of the epitaxial layer and greatly improves the crystal growth quality. The technology can be used for manufacturing low-dimensional nano structures, such as quantum well structures SOAs, and the emergence of SOAs is also a new important development opportunity of SOAs. Compared with a bulk material SOA, the quantum well SOA can obtain larger gain, higher saturation output power, better temperature stability and shorter gain recovery time. More importantly, the insensitivity of the gain to the polarization state of input light can be realized by the change of the material gain through the energy band engineering by means of the low-dimensional quantum effect and the strain effect.
According to the above inventive concept, there is provided a semiconductor optical amplifier chip including: the device comprises the following components which are sequentially stacked:
the semiconductor device comprises a lower electrode layer, a substrate, a buffer layer, a passive waveguide layer, a buried heterogeneous active region, a buried inclined waveguide layer, a cover layer and an upper electrode layer;
wherein, bury the slope waveguide layer, include: a strip-shaped inclined waveguide; and the tapered inclined waveguide is optically connected with the strip-shaped inclined waveguide.
According to the embodiment of the invention, the buried inclined waveguide layer is obliquely arranged relative to the normal of the end face of the chip, has a certain inclination angle and comprises the strip-shaped inclined waveguide and the tapered inclined waveguide with gradually changed width, and the characteristic that the buried inclined waveguide layer has a certain inclination angle and gradually changed width avoids the resonance of the optical wave in the semiconductor optical amplifier, so that the optical gain amplification of the optical wave only occurs in a single pass. The tapered angled waveguide is tapered in width to have a larger lateral dimension at the end face of the chip, resulting in a larger mode field overlap of the semiconductor optical amplifier and the optical fiber, and thus greater coupling efficiency and alignment tolerance.
According to the embodiment of the invention, the near field and far field characteristics of the semiconductor optical amplifier are improved and the coupling efficiency with the optical fiber is improved through the actions of the strip-shaped inclined waveguide and the conical inclined waveguide in the buried inclined waveguide layer; the optical wave extends to the passive waveguide layer under the buried heterogeneous active region under the action of the buried inclined waveguide layer, the longitudinal size of the near-field light spot is changed, the near-field light spot on the light-emitting surface is matched with the mode field radius of the optical fiber, and the optical fiber has high coupling efficiency.
Fig. 1 schematically shows a perspective view of a semiconductor optical amplifier chip according to an embodiment of the present invention, and fig. 2 schematically shows an end view of a partial structure of the semiconductor optical amplifier chip according to an embodiment of the present invention, and as shown in fig. 1 and 2, the semiconductor optical amplifier chip includes: a lower electrode layer 10, a substrate 20, a buffer layer 30, a passive waveguide layer 40, a buried hetero active region 50, a buried inclined waveguide layer 60, a cap layer 70, and an upper electrode layer 80. Wherein, the upper electrode layer is formed with downward protruding portion, and the bellying both sides distribute has the silicon oxide isolation layer 81, and passive waveguide layer, bury heterogeneous active region and bury inclined waveguide layer and form the ridge type structure, and the both sides of ridge type structure distribute has restriction layer 90.
According to an embodiment of the present invention, the buried heterogeneous active region 50 is a strained multi-quantum well structure, and the number of strained multi-quantum wells is at least 5.
According to the embodiment of the invention, the buried heterogeneous active region is a compressive strain multi-quantum well which comprises a plurality of compressive strain quantum well regions and barrier layers, so that the gain of the semiconductor optical amplifier is improved, and the noise coefficient is reduced.
According to an embodiment of the present invention, the confinement layer 90 material and the material of the buried heterogeneous active region 50 have a relative refractive index difference therebetween to guide the light wave in a lateral direction, which is a width direction in the semiconductor optical amplifier layer.
According to an embodiment of the present invention, the material of the cap layer 70 and the material of the buried heterogeneous active region 50 have a relative refractive index difference therebetween to guide the light waves in a lateral direction, which is a high-degree direction in the semiconductor optical amplifier layer.
According to the embodiment of the invention, the buried heterogeneous active region and the buried inclined waveguide layer are both of the layered structures of the buried heterogeneous structures, and the lateral modes are effectively limited by limiting the light waves in the layered structures of the buried heterogeneous structures and guiding the light waves, so that the gain of the semiconductor optical amplifier is improved, and the noise coefficient is reduced.
According to embodiments of the present invention, the buried heterostructure allows the size of the optical wave to be small, reducing the size of the waveguide layer while maintaining a high spatial overlap of the optical fundamental mode with the buried heteroactive region, which therefore has a low threshold current and a very high optical amplification gain.
According to the embodiment of the invention, the end face of the semiconductor optical amplifier chip is plated with the multilayer anti-reflection dielectric film, so that the end face reflectivity is reduced.
Fig. 3 schematically shows a perspective view of a buried inclined waveguide layer of a semiconductor optical amplifier chip according to an embodiment of the present invention, and fig. 4 schematically shows a plan view of the buried inclined waveguide layer of the semiconductor optical amplifier chip according to an embodiment of the present invention. As shown in fig. 2 and 3, the buried inclined waveguide layer includes: a strip-shaped inclined waveguide 601; and a tapered slanted waveguide 602, the tapered slanted waveguide 602 being optically connected to the strip-shaped slanted waveguide 601.
According to the embodiment of the invention, wherein the length of the tapered inclined waveguide 602 is L1, wherein the range of L1 is 500-800 μm; the length of the strip-shaped inclined waveguide 601 is L2, and the range of L2 is 50-200 μm.
According to the embodiment of the invention, the width of the wide end face of the tapered inclined waveguide 602 is W1, W1 is set to be 5-10 μm, the width of the end face of the strip-shaped inclined waveguide 601 is W2, the range of W2 is 3-8 μm, and the difference between W1 and W2 is greater than or equal to 2 μm.
According to the embodiment of the invention, the buried inclined waveguide layer is obliquely arranged relative to the normal of the end face of the chip, has a certain inclination angle and comprises a strip-shaped inclined waveguide and a tapered inclined waveguide with gradually changed width, and the buried inclined waveguide layer improves the gain volume and reduces the resonance of light waves in the semiconductor optical amplifier through a structure with a certain inclination angle and gradually changed width, so that the light waves are subjected to single-pass optical gain amplification only in the semiconductor optical amplifier, and the optical gain of the semiconductor optical amplifier is improved.
According to the embodiment of the invention, the reflected light is diffracted and lost through the buried inclined waveguide layer with gradually changed width and a certain oblique angle, so that the influence of the reflected light on the single-pass gain amplification of the semiconductor optical amplifier is reduced.
According to an embodiment of the invention, the buried hetero active region overlaps partially with the buried inclined waveguide layer, and the portion of the buried inclined waveguide layer that protrudes outside the buried hetero active region overlaps with the passive waveguide layer.
According to the embodiment of the invention, the light wave can be expanded to the passive waveguide layer positioned under the buried heterogeneous active region under the action of the buried inclined waveguide layer, the longitudinal size of the near-field light spot is changed, the near-field light spot of the light-emitting cavity surface is matched with the mode field radius of the optical fiber, and the coupling efficiency with the optical fiber is extremely high.
According to the embodiment of the invention, the difference between W1 and W2 is more than or equal to 2 μm, so that the light-emitting cavity surface of the buried inclined waveguide layer is larger, the light intensity density of the cavity surface is effectively reduced, the power of generating COMD is further reduced, meanwhile, the coupling efficiency of the semiconductor optical amplifier is improved by the large cavity surface, and the alignment tolerance is improved.
According to the embodiment of the invention, the width of the wide end face of the tapered inclined waveguide is set to be 5-10 mu m, so that the size of the light-emitting surface of the semiconductor optical amplifier is close to the core diameter of the single-mode optical fiber, the semiconductor optical amplifier and the optical fiber have larger mode field overlapping, the coupling efficiency and the alignment tolerance are improved, and the coupling process difficulty and the coupling alignment cost are reduced.
The light-emitting surface of the buried inclined waveguide layer is far smaller than that of the semiconductor optical amplifier in the prior art
According to an embodiment of the present invention, wherein the angle between the buried slanted waveguide layer and the normal of the end face of the semiconductor optical amplifier chip is a slanted angle α, α ranging from 2 to 15 °.
According to the embodiment of the present invention, in order to obtain a smooth and flat gain spectrum, the end face reflectivity of the semiconductor optical amplifier should be as low as possible, and the light propagation direction of the semiconductor optical amplifier is inclined at a certain angle with respect to the vertical direction of the end face, so that the end face reflectivity can be effectively reduced. Along with the increase of the inclination angle, the relative reflectivity of the end face is reduced, the unparallel of a far field is increased, and the coupling efficiency between the semiconductor optical amplifier and the optical fiber is influenced, so that the included angle between the buried inclined waveguide layer and the normal line of the end face of the semiconductor optical amplifier chip is set to be 2-15 degrees, and the coupling efficiency between the semiconductor optical amplifier and the optical fiber can be ensured on the premise of effectively reducing the reflectivity of the end face.
According to an embodiment of the invention, the inclination angle α is preferably 4-8 °, for example: 4 °, 5 °, 6 °, 7 °, 8 °.
According to the embodiment of the invention, the inclined angles of the tapered inclined waveguide and the strip-shaped inclined waveguide are the same, so that the reflection and diffraction of the light wave in the buried inclined waveguide layer are reduced.
The buried angled waveguide layer may also be a wedge waveguide and an angled waveguide according to embodiments of the present invention.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A semiconductor optical amplifier chip comprises the following components which are sequentially stacked:
the semiconductor device comprises a lower electrode layer, a substrate, a buffer layer, a passive waveguide layer, a buried heterogeneous active region, a buried inclined waveguide layer, a cover layer and an upper electrode layer;
wherein the buried sloped waveguide layer comprises:
a strip-shaped inclined waveguide; and
a tapered angled waveguide, wherein the tapered angled waveguide is optically connected to the slab angled waveguide.
2. The chip of claim 1, wherein the buried angled waveguide layer is at an angle α to the end surface normal of the semiconductor optical amplifier chip, said α being in the range of 2-15 °.
3. The chip of claim 1, wherein the tapered slanted waveguide has a length of L1, wherein L1 ranges from 500-800 μm; the length of the strip-shaped inclined waveguide is L2, and the range of L2 is 50-200 mu m.
4. The chip of claim 1, wherein the width of the wide end face of the tapered inclined waveguide is W1, W1 is set to 5-10 μm, the width of the end face of the stripe-shaped inclined waveguide is W2, W2 ranges from 3-8 μm, and the difference between W1 and W2 is greater than or equal to 2 μm.
5. The chip of claim 1, wherein the buried heterogeneous active region is a strained multi-quantum well structure, the number of strained multi-quantum wells being at least 5.
6. The chip of claim 1, wherein the upper electrode layer is formed with a downward protruding portion, and silicon oxide isolation layers are distributed on two sides of the protruding portion;
the passive waveguide layer, the buried heterogeneous active region and the buried inclined waveguide layer form a ridge structure, and limiting layers are distributed on two sides of the ridge structure.
7. The chip of claim 6, wherein the confinement layer and the buried heterogeneous active region have a relative refractive index difference between the materials.
8. The chip of claim 1, in which the material of the cap layer and the material of the buried heterogeneous active region have a relative refractive index difference therebetween.
9. The chip of claim 1, wherein the buried heterogeneous active region partially overlaps the buried slanted waveguide layer, and a portion of the buried slanted waveguide layer that protrudes outside the buried heterogeneous active region overlaps the passive waveguide layer.
10. The chip of claim 1, wherein the chip end face is plated with a multilayer anti-reflection dielectric film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210151942.4A CN114530762A (en) | 2022-02-18 | 2022-02-18 | Semiconductor optical amplifier chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210151942.4A CN114530762A (en) | 2022-02-18 | 2022-02-18 | Semiconductor optical amplifier chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114530762A true CN114530762A (en) | 2022-05-24 |
Family
ID=81623601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210151942.4A Pending CN114530762A (en) | 2022-02-18 | 2022-02-18 | Semiconductor optical amplifier chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114530762A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117117635A (en) * | 2023-08-24 | 2023-11-24 | 武汉敏芯半导体股份有限公司 | Semiconductor optical amplifier and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0895326A1 (en) * | 1997-07-28 | 1999-02-03 | Nec Corporation | Semiconductor optical amplifier |
| US20050157766A1 (en) * | 2004-01-19 | 2005-07-21 | Hyeon-Soo Kim | Semiconductor optical device including spot size conversion region |
| KR20080052093A (en) * | 2006-12-07 | 2008-06-11 | 한국전자통신연구원 | Reflective semiconductor optical amplifier(r-soa) and reflective superluminescent diode(r-sld) |
| US20100193769A1 (en) * | 2007-05-01 | 2010-08-05 | Exalos Ag | Light source, and device |
| WO2020088613A1 (en) * | 2018-11-02 | 2020-05-07 | Huawei Technologies Co., Ltd. | Optical amplifier |
-
2022
- 2022-02-18 CN CN202210151942.4A patent/CN114530762A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0895326A1 (en) * | 1997-07-28 | 1999-02-03 | Nec Corporation | Semiconductor optical amplifier |
| US20050157766A1 (en) * | 2004-01-19 | 2005-07-21 | Hyeon-Soo Kim | Semiconductor optical device including spot size conversion region |
| KR20080052093A (en) * | 2006-12-07 | 2008-06-11 | 한국전자통신연구원 | Reflective semiconductor optical amplifier(r-soa) and reflective superluminescent diode(r-sld) |
| US20100193769A1 (en) * | 2007-05-01 | 2010-08-05 | Exalos Ag | Light source, and device |
| WO2020088613A1 (en) * | 2018-11-02 | 2020-05-07 | Huawei Technologies Co., Ltd. | Optical amplifier |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117117635A (en) * | 2023-08-24 | 2023-11-24 | 武汉敏芯半导体股份有限公司 | Semiconductor optical amplifier and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5585957A (en) | Method for producing various semiconductor optical devices of differing optical characteristics | |
| US6803604B2 (en) | Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device | |
| JP4983790B2 (en) | Optical semiconductor device and manufacturing method thereof | |
| CN111711074B (en) | Laser and manufacturing method thereof | |
| JP5374894B2 (en) | Semiconductor optical amplifier, manufacturing method thereof, and semiconductor optical integrated device | |
| JPH0661570A (en) | Strain multiple quantum well semiconductor laser | |
| CN114530762A (en) | Semiconductor optical amplifier chip | |
| WO2007094063A1 (en) | Semiconductor light amplifier | |
| US6545801B2 (en) | Semiconductor optical amplifier performing polarization-independent operation | |
| US8948606B2 (en) | Semiconductor optical amplifier | |
| CN100362419C (en) | Semiconductor optical amplifier | |
| JP3421999B2 (en) | Optical functional device, optical integrated device including the same, and manufacturing method thereof | |
| JP2004266095A (en) | Semiconductor optical amplifier | |
| JPH01179488A (en) | Optical amplifier | |
| US5917846A (en) | Optical Semiconductor device with carrier recombination layer | |
| JPH09129969A (en) | Semiconductor laser | |
| US20060001953A1 (en) | Linear optical amplifier using coupled waveguide induced feedback | |
| Kotaki | Semiconductor optical active devices for photonic networks | |
| JPH01251685A (en) | Light amplifier | |
| CN218828414U (en) | Double-ridge semiconductor optical amplifier with high coupling efficiency | |
| JPH08236853A (en) | Semiconductor laser | |
| JPH0697593A (en) | Semiconductor optical amplification element | |
| Ma et al. | 1.55 µm spot-size converter integrated polarization-insensitive quantum-well semiconductor optical amplifier with tensile-strained barriers | |
| KR100359940B1 (en) | semiconductor laser diode | |
| JP3154419B2 (en) | Semiconductor optical amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |