CN114520161A - Wafer processing device and method - Google Patents

Wafer processing device and method Download PDF

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Publication number
CN114520161A
CN114520161A CN202011293683.6A CN202011293683A CN114520161A CN 114520161 A CN114520161 A CN 114520161A CN 202011293683 A CN202011293683 A CN 202011293683A CN 114520161 A CN114520161 A CN 114520161A
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CN
China
Prior art keywords
wafer
cleaning
chamber
cleaning system
wafer processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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CN202011293683.6A
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Chinese (zh)
Inventor
姜东勋
周娜
李俊杰
王佳
李琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
Original Assignee
Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
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Filing date
Publication date
Application filed by Institute of Microelectronics of CAS, Zhenxin Beijing Semiconductor Co Ltd filed Critical Institute of Microelectronics of CAS
Priority to CN202011293683.6A priority Critical patent/CN114520161A/en
Publication of CN114520161A publication Critical patent/CN114520161A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention relates to a wafer processing device and a method, belongs to the technical field of semiconductor manufacturing, and solves the problems that in the prior art, cleaning is carried out after all wafer processes are carried out, so that smoke generated in the semiconductor manufacturing process cannot be completely removed, and the yield of wafers is lost. The wafer processing apparatus includes a process chamber, a transfer chamber, and a cleaning system. The cleaning system is arranged in the wafer processing device, so that the wafer passing through the process chamber can directly enter the cleaning system for cleaning. The transfer chamber is internally provided with a transfer manipulator which completes the transfer of the wafer between the process chamber and the transfer chamber and between the transfer chamber and the cleaning system. The wafer processing method comprises the steps of conveying the wafer into a cleaning system for cleaning and drying after each process which generates smoke is carried out. The invention realizes the effective removal of the flue gas and improves the yield loss caused by the flue gas.

Description

Wafer processing device and method
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer processing device and a wafer processing method.
Background
During the semiconductor manufacturing process, the wafer is contaminated by the fumes generated by the etching, deposition, and Implantation (Implantation) processes. The flue gas left on the wafer solidifies with time and becomes a Defect Source (Defect Source), resulting in a decrease in product yield.
In order to remove such fumes, various improvements have been made in the prior art. A typical process is to set N2Stocker (Stocker), ammonia Filter (Filter), buffer station and side storage.
However, the existing cleaning equipment and the process chamber are usually independently arranged, so that cleaning can be performed only after all wafer processes are performed, and the flue gas left on the wafer is solidified along with the prolonging of time, so that the flue gas cannot be completely removed, and certain influence is brought to the yield of products.
Disclosure of Invention
In view of the above analysis, the present invention is directed to a wafer processing apparatus and method, so as to solve the problems that the prior art cannot completely remove the fumes generated during the semiconductor manufacturing process and the wafer yield is lost because the cleaning is performed after all wafer processes are performed.
The purpose of the invention is mainly realized by the following technical scheme:
in one aspect, the present disclosure provides a wafer processing apparatus comprising a process chamber, a transfer chamber, and a cleaning system; the process chamber comprises an etching chamber, a deposition chamber or an injection chamber, and the cleaning system is arranged in the wafer processing device, so that wafers processed by the etching chamber, the deposition chamber or the injection chamber can directly enter the cleaning system for cleaning; the transfer chamber is internally provided with a transfer manipulator which is used for finishing the transmission of the wafer between the process chamber and the transfer chamber and between the transfer chamber and the cleaning system.
On the basis of the scheme, the invention also carries out the following improvements:
based on the further improvement of the wafer processing device, the cleaning system is positioned on the side surface of the wafer processing device.
Based on the further improvement of the wafer processing device, the cleaning system has a drying processing function and can dry the cleaned wafer.
In a further improvement of the above wafer processing apparatus, the cleaning system includes a housing, a susceptor in the housing, a rotatable support for placing the wafer, and at least one first liquid distribution pipe for providing a cleaning liquid, the first liquid distribution pipe is used for spraying the cleaning liquid to the surface of the wafer, and the support is located on the susceptor.
In accordance with a further improvement of the above wafer processing apparatus, the first liquid distribution pipe includes a first tubular portion having a bend and a first nozzle for ejecting the cleaning liquid.
According to a further improvement of the wafer processing device, the first liquid distribution pipe is used for conveying deionized water.
Based on the further improvement of the wafer processing device, the first nozzle is positioned outside the edge of the wafer.
Based on the further improvement of the wafer processing device, the cleaning system also comprises a second liquid distribution pipe for cleaning the periphery or the oblique angle of the wafer.
In accordance with a further development of the wafer processing apparatus described above, the second liquid distribution conduit comprises a second tubular portion having a curvature and a second nozzle.
On the other hand, the invention also provides a wafer processing method, which comprises the steps that a transfer mechanical arm in a transfer chamber picks up a wafer and places the wafer in a process chamber, after the process treatment is carried out on the wafer, the transfer mechanical arm picks up the wafer again and places the wafer in a cleaning system for cleaning, and drying treatment is carried out; after each process which generates fume is finished, the wafer is sent into a cleaning system to be cleaned and dried.
The further improvement based on the wafer processing method comprises the steps that a transfer mechanical arm in a transfer chamber places a wafer in a process chamber; after the process is finished, the transfer manipulator places the wafer on a supporting piece of the cleaning system, adjusts the rotating speed of the supporting piece, and cleans the wafer by cleaning liquid sprayed from the liquid distribution pipe; after cleaning, drying the wafer; and the transferring mechanical arm takes out the wafer.
Based on the further improvement of the wafer processing method, the drying treatment is spin drying.
Compared with the prior art, the invention can realize at least one of the following beneficial effects:
(1) according to the invention, the cleaning system is arranged in the wafer processing device, so that the cleaning can be carried out immediately after the processes (such as etching, deposition and injection) generating the flue gas, but not after all the wafer processes are finished, the flue gas is effectively prevented from solidifying on the wafer, the flue gas is removed maximally, the flue gas generated in the processes can be effectively removed, and the yield loss caused by the flue gas is improved.
(2) The present invention can effectively prevent residues in or on the lower surface of the curved tubular portion from dripping onto the active surface of the wafer by locating the first nozzle outside the edge of the wafer.
(3) The periphery or the oblique angle of the wafer can be cleaned by arranging the second liquid distribution pipe, so that smoke is further removed, and the product yield is improved.
(4) The deionized water cleaning system is arranged at a specific position, such as the side surface of the wafer processing device, so that the volume of the equipment is effectively prevented from being increased. Specifically, the side may reduce the volume by at least 1/3 compared to when the deionized water rinse system is located elsewhere.
(5) The invention does not need to set N2The stocker and the storage device can be reduced in volume by at least 1/3, thereby enlarging the manufacturing space.
(6) The cleaning system is arranged in the wafer processing device, and the wafer cleaning process can be carried out in the plasma cleaning process (cleaning cavity is cleaned for 4-20 minutes) and the vacuumizing time (cleaning cavity is cleaned for 3-5 minutes) in the technical process, so that the circulation time of the wafer can be reduced, the delay time or the standby time is easy to manage, the productivity is increased, and the production efficiency is improved.
In the invention, the technical schemes can be combined with each other to realize more preferable combination schemes. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The drawings, in which like reference numerals refer to like parts throughout, are for the purpose of illustrating particular embodiments only and are not to be considered limiting of the invention.
FIG. 1 is a top view of a wafer processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view of a cleaning system according to an embodiment of the present invention;
FIG. 3 is a schematic view of a nozzle located outside the edge of a wafer according to an embodiment of the present invention.
Reference numerals:
1-a process chamber; 2-a transfer chamber; 3-cleaning the system; 4-a shell; 5-a base; 6-a support member; 7-a first liquid distribution conduit; 8-a first tubular portion; 9-a first nozzle; 10-a wafer; 11-vertical line; 12-a second liquid distribution conduit; 13-a second tubular portion; 14-a second nozzle; 15-a baffle; 16-pre-vacuum chamber; 17-an atmospheric transfer chamber; 18-film holder.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
Example one
One embodiment of the present invention discloses a wafer processing apparatus, as shown in fig. 1. The wafer processing device comprises a process chamber 1, a transfer chamber 2, a cleaning system 3, a pre-vacuumizing chamber 16, an atmospheric transfer chamber 17 and a wafer rack 18. The process chamber may include an etch chamber or a deposition chamber or an implantation chamber. The transfer mechanical arm is arranged in the transfer cavity 2, and the transfer of the wafer between the process cavity 1 and the transfer cavity 2 and between the transfer cavity 2 and the cleaning system 3 is completed through the transfer mechanical arm.
In one possible embodiment, the cleaning system 3 is disposed in the wafer processing apparatus so that wafers processed through the etching chamber, the deposition chamber, or the implantation chamber can directly enter the cleaning system 3 for cleaning.
In order to prevent the cleaning system 3 from becoming bulky after being placed in the wafer processing apparatus, in another possible embodiment, the cleaning system 3 is provided on the side of the wafer processing apparatus.
In addition to cleaning the wafer, the cleaning system 3 of the present application also has a drying function, which can dry the cleaned wafer. For example, the cleaning liquid can be spun off by centrifugal force.
The structure of the washing system will be described in detail with reference to fig. 2.
The cleaning system 3 comprises a housing 4, a susceptor 5 in the housing, a rotatable support 6 for placing the wafer, and at least one first liquid distribution conduit 7 for providing a cleaning liquid. The first liquid distribution pipe 7 can spray cleaning liquid to the surface of the wafer, and the support 6 is located on the pedestal 5.
In a possible embodiment, the first liquid distribution conduit 7 comprises a first tubular portion 8 having a curvature and first nozzles 9 for ejecting the washing liquid. The first tubular portion 8 is suspended above a wafer 10, which is rotated below the first nozzle 9. The first nozzle 9 is directed towards the active surface of the wafer 10.
The first liquid distribution conduit 7 is typically used to deliver deionized water, also referred to as a "water conduit".
In other embodiments, the cleaning system 3 may include a plurality of first liquid distribution conduits 7 arranged side by side and suspended above the wafer 10.
Considering that residues, such as cleaning liquid, within the curved tubular portion or on the lower surface of the curved tubular portion may drip onto the active surface of the wafer, in another possible embodiment the curved first tubular portion 8 of the first liquid distribution conduit 7 is shortened such that the first nozzles 9 are located outside the edge of the wafer 10, as shown in fig. 3. For example, the first nozzle 9 may be located 2cm above the wafer, 1cm away from the edge of the wafer.
With the above structural improvement, the cleaning liquid in the curved tubular portion or on the lower surface of the curved tubular portion does not drip onto the active surface of the wafer but drips into the housing 4, and can be recovered by a drain system (not shown in the figure).
In addition, it is also possible to ensure that the jet of the cleaning liquid can be accurately spread to a specific position of the wafer by controlling the angle α of the liquid jetted from the first nozzle 9 with respect to the vertical line 11. For example, α may be 40-80.
Based on a further development of the above-mentioned cleaning system, the cleaning system 3 further comprises a second liquid distribution conduit 12. The second liquid distribution pipe 12 is rotatable and is used for cleaning the periphery or the bevel of the wafer, so that smoke is further removed, and the product yield is improved.
In a possible embodiment, with reference to fig. 2, the second liquid distribution conduit 12 comprises a second tubular portion 13 having a curvature and a second nozzle 14. Like the first nozzle 9, the second nozzle 14 is also located outside the edge of the wafer 10, thereby effectively preventing cleaning liquid droplets within the curved tubular portion or on the lower surface of the curved tubular portion from falling onto the active surface of the wafer.
The cleaning liquid delivered by the second liquid distribution conduit 12 may be the same as or different from the first liquid distribution conduit. In another possible embodiment, the cleaning liquid delivered by the second liquid distribution pipe is hydrogen peroxide and sulfuric acid (H)2O2/H2SO4) To remove fumes generated during the etching process, the deposition process, or the implantation process from the periphery or bevel of the semiconductor wafer 10.
In view of the splashing caused by the cleaning liquid sprayed from the nozzles falling onto the wafer surface, in a preferred embodiment, the cleaning system 3 further comprises an annular baffle 15. The annular baffle 15 is designed to be liftable, so that the baffle can be lifted from a lower position to a higher position as required, and splashing of cleaning liquid is effectively prevented.
Example two
The invention further discloses a wafer processing method, which comprises the steps that a transfer mechanical arm in a transfer chamber picks up a wafer and places the wafer in a process chamber, after the process treatment is carried out on the wafer, the transfer mechanical arm picks up the wafer again and places the wafer in a cleaning system for cleaning, and drying treatment is carried out.
Since a plurality of processes are usually performed in the manufacturing process of the wafer, there are a plurality of processes that generate the fumes, such as an etching process, a deposition process, an implantation process, and the like. The wafer processing method of the invention is that after each process which can generate smoke is finished, the wafer is immediately sent into the cleaning system to be cleaned and dried under the condition of no delay, and the smoke is not solidified on the surface of the wafer, so that the smoke is removed more thoroughly, and the yield loss is effectively prevented.
The following describes the wafer processing method of the present invention in detail by taking an etching process as an example.
First, a transfer robot in the transfer chamber evacuates a first wafer in the pre-evacuation chamber 16. After the vacuumizing is finished, the mechanical arm picks up the wafer in the pre-vacuumizing chamber 16 and places the wafer in the etching cavity. After the first wafer is etched, the first wafer is conveyed to the supporting piece of the wafer cleaning system by the mechanical arm, and the cleaning system performs vacuum adsorption and fixation so as to perform a first cleaning process.
And then, carrying out a plasma cleaning process on the etching cavity. SF can be introduced according to specific process requirements6、O2Or Ar. The reaction gas is ignited under the plasma power of 200-500W (no wafer is left in the chamber to remove the residue of the previous process), and cleaned for 4-20 minutes.
In the process of carrying out plasma cleaning on the etching cavity, the cleaning system disclosed by the invention is adopted to carry out a first cleaning process on the wafer.
At the moment, the first nozzle 9 sprays cleaning liquid from the upper part or the side part of the wafer to clean the first wafer, after 1-2 minutes, the second cleaning process is carried out, at the moment, the second nozzle 14 (located 2cm above the wafer and 1cm far away from the edge of the wafer) sprays deionized water to the first wafer to clean the first wafer for 2-3 minutes, at the moment, if the etching cavity finishes plasma cleaning, vacuumizing operation can be carried out for 3-5 minutes, then, wafer transferring is carried out, and etching operation and the like are carried out on the second wafer. At this point, the second cleaning process for the first wafer in the present invention is completed.
The robot in the transfer chamber 2 then places the first wafer in the pre-evacuation chamber 16, the robot then places the first wafer in the pre-evacuation chamber 16 in the atmospheric transfer chamber 17, and the first wafer is then placed on the rack 18.
Compared with the prior art, the invention can realize at least one of the following beneficial effects:
(1) according to the invention, the cleaning system is arranged in the wafer processing device, so that the cleaning can be carried out immediately after the processes (such as etching, deposition and injection) generating the flue gas, but not after all the wafer processes are finished, the flue gas is effectively prevented from solidifying on the wafer, the flue gas is removed maximally, the flue gas generated in the processes can be effectively removed, and the yield loss caused by the flue gas is improved.
(2) The present invention can effectively prevent residues in or on the lower surface of the curved tubular portion from dripping onto the active surface of the wafer by locating the first nozzle outside the edge of the wafer.
(3) The periphery or the oblique angle of the wafer can be cleaned by arranging the second liquid distribution pipe, so that smoke is further removed, and the product yield is improved.
(4) The deionized water cleaning system is arranged at a specific position, such as the side surface of the wafer processing device, so that the volume of the equipment is effectively prevented from being increased. Specifically, the side may reduce the volume by at least 1/3 compared to when the deionized water rinse system is located elsewhere.
(5) The invention does not need to set N2The stocker and the storage device can be reduced in volume by at least 1/3, thereby enlarging the manufacturing space.
(6) The cleaning system is arranged in the wafer processing device, and the wafer cleaning process can be carried out in the plasma cleaning process (cleaning the cavity for 4-20 minutes and the like) and the vacuumizing time (3-5 minutes and the like) in the technical process, so that the circulation time of the wafer can be reduced, the delay time or the standby time is easy to manage, the productivity is increased, and the production efficiency is improved.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.

Claims (12)

1. A wafer processing apparatus, comprising a process chamber, a transfer chamber, and a cleaning system;
the process chamber comprises an etching chamber, a deposition chamber and/or an injection chamber, and the cleaning system is arranged in the wafer processing device, so that wafers processed by the etching chamber, the deposition chamber or the injection chamber can directly enter the cleaning system for cleaning;
the transfer chamber is internally provided with a transfer manipulator which is used for finishing the transmission of the wafer between the process chamber and the transfer chamber and between the transfer chamber and the cleaning system.
2. The wafer processing apparatus of claim 1, wherein the cleaning system is located at a side of the wafer processing apparatus.
3. The wafer processing apparatus as claimed in claim 1, wherein the cleaning system has a drying function capable of drying the cleaned wafer.
4. The wafer processing apparatus as claimed in claims 1-3, wherein the cleaning system comprises a housing, a susceptor in the housing, a rotatable support for placing the wafer, and at least one first liquid distribution conduit for providing a cleaning liquid for spraying the cleaning liquid onto the surface of the wafer, the support being located on the susceptor.
5. The wafer processing apparatus of claim 4, wherein the first liquid distribution conduit comprises a first nozzle having a curved first tubular portion and for emitting a cleaning liquid.
6. The wafer processing apparatus of claim 4, wherein the first liquid distribution conduit is configured to deliver deionized water.
7. The wafer processing apparatus of claim 5, wherein the first nozzle is located outside an edge of the wafer.
8. The wafer processing apparatus of claim 5, wherein the cleaning system further comprises a second liquid distribution tube for cleaning a perimeter or bevel of the wafer.
9. The wafer processing apparatus of claim 8, wherein the second liquid distribution conduit comprises a second tubular portion having a bend and a second nozzle.
10. A wafer processing method is characterized by comprising
A transfer manipulator in the transfer chamber picks up the wafer and places the wafer in the process chamber, after the process treatment is carried out on the wafer, the transfer manipulator picks up the wafer again and places the wafer in the cleaning system for cleaning, and drying treatment is carried out;
after each process which generates fume is finished, the wafer is sent into a cleaning system to be cleaned and dried.
11. The method of claim 10, comprising
A transfer manipulator in the transfer chamber places the wafer in the process chamber;
after the process is finished, the transfer manipulator places the wafer on a supporting piece of the cleaning system, adjusts the rotating speed of the supporting piece, and cleans the wafer by cleaning liquid sprayed from the liquid distribution pipe;
after cleaning, drying the wafer;
and the transferring mechanical arm takes out the wafer.
12. The method of claim 10 or 11, wherein the drying process is spin drying.
CN202011293683.6A 2020-11-18 2020-11-18 Wafer processing device and method Pending CN114520161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011293683.6A CN114520161A (en) 2020-11-18 2020-11-18 Wafer processing device and method

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Application Number Priority Date Filing Date Title
CN202011293683.6A CN114520161A (en) 2020-11-18 2020-11-18 Wafer processing device and method

Publications (1)

Publication Number Publication Date
CN114520161A true CN114520161A (en) 2022-05-20

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CN202011293683.6A Pending CN114520161A (en) 2020-11-18 2020-11-18 Wafer processing device and method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115775735A (en) * 2022-12-02 2023-03-10 江苏东海半导体股份有限公司 Preparation method of silicon carbide accumulation state MOSFET with groove

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115775735A (en) * 2022-12-02 2023-03-10 江苏东海半导体股份有限公司 Preparation method of silicon carbide accumulation state MOSFET with groove
CN115775735B (en) * 2022-12-02 2023-11-07 江苏东海半导体股份有限公司 Preparation method of silicon carbide accumulation state MOSFET with groove

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