CN114517289A - Method and apparatus for forming silicon nitride film - Google Patents

Method and apparatus for forming silicon nitride film Download PDF

Info

Publication number
CN114517289A
CN114517289A CN202111318553.8A CN202111318553A CN114517289A CN 114517289 A CN114517289 A CN 114517289A CN 202111318553 A CN202111318553 A CN 202111318553A CN 114517289 A CN114517289 A CN 114517289A
Authority
CN
China
Prior art keywords
gas
silicon nitride
nitride film
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111318553.8A
Other languages
Chinese (zh)
Inventor
渡边幸夫
高藤哲也
内田博章
佐藤吉宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN114517289A publication Critical patent/CN114517289A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/4554—Plasma being used non-continuously in between ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

A method and an apparatus for forming a silicon nitride film. A silicon nitride film having a good coverage is formed at a substrate temperature of 200 ℃ or lower. A method for forming a silicon nitride film on a substrate accommodated in a process chamber, the method comprising: a step (a) of supplying a gas containing a silicon halide gas into the processing chamber in a state where the high-frequency power is not supplied; stopping the supply of the gas containing the silicon halide gas and exhausting the inside of the processing chamber after the steps (b) and (a); supplying a nitrogen-containing gas into the process chamber after the steps (c) and (b); after the steps (d) and (c), supplying high-frequency power into the processing chamber to generate plasma; after the steps (e) and (d), the supply of the nitrogen-containing gas and the supply of the high-frequency power are stopped, and the inside of the processing chamber is exhausted; and repeating the steps (a) to (e) corresponding to X times (X.gtoreq.1) until a silicon nitride film having a predetermined film thickness is formed, wherein the substrate temperature is controlled to 200 ℃ or less in the steps (a) to (e).

Description

Method and apparatus for forming silicon nitride film
Technical Field
The present disclosure relates to a method and an apparatus for forming a silicon nitride film.
Background
For example, patent documents 1 and 2 propose the following methods: a process of alternately supplying a silicon-containing source gas and a nitrogen-containing gas by repeating purging with a residual gas in the chamber interposed therebetween, and a silicon nitride film is formed by an ALD (Atomic Layer Deposition) method. In the above film forming method, the temperature of the substrate is controlled to about 300 to 650 ℃.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2020 and 64924
Patent document 2: japanese laid-open patent publication No. 2000-114257
Disclosure of Invention
Problems to be solved by the invention
The present disclosure provides: a film forming method and a film forming apparatus capable of forming a silicon nitride film having a good coverage in an environment where the temperature of a substrate is 200 ℃ or lower.
Means for solving the problems
According to an aspect of the present disclosure, there is provided a method for forming a silicon nitride film on a substrate accommodated in a process chamber, the method including: a step (a) of supplying a gas containing a silicon halide gas into the processing chamber in a state where the high-frequency power is not supplied; a step (b) of stopping the supply of the gas containing the silicon halide gas after the step (a) and exhausting the inside of the processing chamber; a step (c) of supplying a nitrogen-containing gas into the processing chamber after the step (b); a step (d) of supplying the high-frequency power into the processing chamber to generate plasma after the step (c); a step (e) of, after the step (d), stopping the supply of the nitrogen-containing gas and the supply of the high-frequency power and exhausting the inside of the processing chamber; and repeating the steps (a) to (e) X times (X.gtoreq.1) corresponding to the formation of the silicon nitride film having a predetermined film thickness, wherein the temperature of the substrate is controlled to 200 ℃ or lower in the steps (a) to (e).
ADVANTAGEOUS EFFECTS OF INVENTION
According to one aspect, a silicon nitride film having a good coverage can be formed in an environment where the temperature of the substrate is 200 ℃ or lower.
Drawings
Fig. 1 is a schematic cross-sectional view showing an example of an organic EL device according to an embodiment.
FIG. 2 is a schematic cross-sectional view showing an example of a film deposition apparatus according to an embodiment.
Fig. 3 is a flowchart illustrating an example of the film forming method according to the embodiment.
Fig. 4 is a timing chart showing an example of the film formation method according to the embodiment.
Fig. 5 is a diagram showing an example of characteristic evaluation of a silicon nitride film by the film formation methods of the embodiment and the comparative example.
Description of the reference numerals
10 Process Chamber
60 substrate carrying table
100 film forming apparatus
110 light emitting element driving circuit layer
120 anode
130 hole injection layer
114 hole transport layer
115 organic light-emitting layer
116 electron transport layer
150 transistor element
160 storage body (bank)
180 electron injection layer
190 cathode
200 organic EL device
220 sealing film
Detailed Description
Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant description may be omitted.
[ organic EL device ]
The organic EL device has a feature of not withstanding moisture. Therefore, in the manufacturing process of the organic EL device, the following processes are performed: as a sealing film for protecting the organic EL device from external moisture, a silicon nitride film is formed. However, in particular, in an organic EL device including an oxide semiconductor, further, since the oxide semiconductor is deteriorated by hydrogen, it is desired to reduce hydrogen contained in a silicon nitride film as an encapsulation film. First, the structure of the organic EL device 200 including the sealing film of the silicon nitride film will be briefly described with reference to fig. 1.
Fig. 1 is a schematic cross-sectional view showing an example of an organic EL device 200 according to an embodiment. The organic EL device 200 has: a light emitting element driving circuit layer 110, an anode 120, a hole injection layer 130, a hole transport layer 114, an organic light emitting layer 115, a memory body 160, an electron transport layer 116, an electron injection layer 180, a cathode 190, and a sealing film 220. The cathode 190 and the sealing film 220 are transparent films.
The light-emitting element driving circuit layer 110 includes: a plate (plate)140, transistor elements 150(150A, 150B) disposed on the plate 140, and a planarization film 157 disposed on the plate 140 so as to cover the transistor elements 150.
The plate 140 may be, for example, a glass plate, or a flexible plate formed of resin. The transistor elements 150 disposed on the plate 140 are Thin Film Transistors (TFTs). The transistor element 150 includes: the source/drain electrode 151, a semiconductor layer 152 formed in contact with the source/drain electrode 151, a gate insulating film 153 formed on the semiconductor layer 152, and a gate electrode 154 disposed on the gate insulating film 153. The 2 transistor elements 150(150A and 150B) are electrically connected to each other by the wiring 155. According to this structure, the organic EL device 200 has a structure of an active matrix type. The semiconductor layer 152 is formed of an oxide semiconductor such as indium gallium zinc oxide (igzo (ingazno)), Indium Tin Zinc Oxide (ITZO), zinc oxide (ZnO), Indium Zinc Oxide (IZO), Indium Gallium Oxide (IGO), Indium Tin Oxide (ITO), or indium oxide (InO).
The planarization film 157 is disposed on the plate 140 so as to cover the transistor element 150. According to the planarization film 157, the surface of the light-emitting element driving circuit layer 110 becomes flat.
The organic EL device 200 has a top emission structure, and when a voltage is applied between the anode 120 and the cathode 190, light emission occurs in the organic light-emitting layer 115, and light 170 is emitted outward (upward) through the cathode 190 and the sealing film 220. In addition, light emitted from the organic light-emitting layer 115 toward the light-emitting element driving circuit layer 110 is reflected by the anode 120 and emitted outward (upward) as light 170 through the cathode 190 and the sealing film 220.
The anode 120 is a pixel electrode stacked on the surface of the light-emitting element driving circuit layer 110 and applying a positive voltage to the organic EL device 200 with respect to the cathode 190. The hole injection layer 130 is disposed on the anode 120. The hole transport layer 114 is disposed on the hole injection layer 130. The organic light emitting layer 115 is disposed on the hole transport layer 114. Further, the electron transport layer 116 is disposed on the organic light emitting layer 115. The electron injection layer 180 is disposed on the electron transport layer 116. The cathode 190 is disposed on the electron injection layer 180. The hole transport layer 114 and the electron transport layer 116 may be omitted depending on the properties of the hole injection layer 130, the electron injection layer 180, and the organic light emitting layer 115, which are adjacent layers.
The anode 120, the hole injection layer 130, the hole transport layer 114, the organic light-emitting layer 115, the electron transport layer 116, the electron injection layer 180, and the cathode 190 are examples of a light-emitting element, and the transistor element 150 is an example of a driving element including an oxide semiconductor.
The sealing film 220 functions as a protective film that blocks moisture from penetrating from the outside to the inside of the organic EL device 200. The sealing film 220 is an example of a sealing film for sealing a light-emitting element formed on the surface of the substrate and a driving element including an oxide semiconductor for driving the light-emitting element.
The organic EL device 200 does not endure moisture, and if moisture is doped from the outside to the inside of the organic EL device 200, the organic EL device 200 deteriorates. In addition, the oxide semiconductor included in the transistor element 150 deteriorates due to hydrogen incorporation. Thus, in the step of forming the sealing film 220, hydrogen (H) is reduced2) Water content (H)2O), it is contemplated to use SiF containing no hydrogen atoms4Gas and N2The gas film is formed as a silicon nitride film. This reduces the hydrogen concentration in the sealing film 220 in the process of manufacturing the organic EL device 200, and thereby can suppress deterioration in the characteristics of the sealing film 220 and deterioration in the reliability of the organic EL device 200.
In the step of forming the sealing film 220, if the temperature of the substrate is controlled to be higher than 200 ℃, the characteristics such as film stability become good, but the organic EL device 200 having low heat resistance is adversely affected. Therefore, the silicon nitride film must be formed while controlling the temperature of the substrate to 200 ℃ or lower, preferably 100 ℃ or lower.
Therefore, the temperature of the substrate is controlled to 200 ℃ or lower, preferably 100 ℃ or lower, and SiF is used by a CVD (Chemical Vapor Deposition) method4Gas and N2When a silicon nitride film is formed by a gas, the film quality is poor and the film becomes unstable. The unstable film means, for example, that when a large amount of fluorine remains in the formed silicon nitride film, the fluorine in the film reacts with moisture in the atmosphere, and the film quality of the silicon nitride film is changed. When a silicon nitride film is formed by controlling the temperature of the substrate to 200 ℃ or lower, fluorine is likely to remain in the silicon nitride film, and thus the film tends to be unstable. On the other hand, as described above, when the temperature of the substrate is controlled to, for example, 300 ℃ or higher during the formation of the silicon nitride film, the stability of the film is improved, but the organic EL device 200 is deteriorated by heat applied during the manufacturing process.
Further, the temperature of the substrate is controlled to 200 ℃ or lower, and SiF is used by CVD method4Gas and N2When the gas film is formed as a silicon nitride film, there is a problem that the coverage is poor and the silicon nitride film is not easily attached to the inclined surface (tapered portion).
For example, as shown in fig. 1, a plurality of concave portions and convex portions are formed on a surface of a substrate on which a silicon nitride film is formed, and side surfaces of at least a part of the concave portions or convex portions are formed in a tapered shape like the inclined surface a.
Therefore, if the amount of fluorine in the silicon nitride film is large, the coverage of the side surface film on the concave portions or the convex portions is deteriorated, and the silicon nitride film cannot be formed on the inclined surface a, or cracks are introduced into the silicon nitride film on the inclined surface a. As a result, moisture is incorporated into the organic EL device 200 from the outside, and the organic EL device 200 deteriorates.
From the above, a manufacturing method (film forming method) is desired in which a silicon nitride film used as the sealing film 220 is formed in an environment where the temperature of the substrate is 200 ℃ or lower, a film having a good coverage and film stability is formed, and the organic EL device 200 is not deteriorated. Therefore, in the film formation method of the present embodiment, a film having a good coverage and good film stability is formed in an environment where the temperature of the substrate is 200 ℃.
In the film forming method of the present embodiment, film formation is performed by an ald (atomic Layer deposition) method. That is, SiF is supplied first4Gas, to make SiF4The gas adheres to the substrate surface, and then the SiF is stopped4Gas, SiF4The residual gas of the gas is exhausted. Then, N is supplied2Gas and high frequency power to generate N2Plasma of gas, using N2Plasma of gas to make SiF attached to the surface of substrate4The gas is nitrided, whereby a silicon nitride film is formed. The temperature of the substrate during film formation is controlled to 200 ℃ or lower, preferably 100 ℃ or lower. According to the film formation method of the present embodiment, a silicon nitride film can be formed in a satisfactory coverage area even in a tapered portion such as the inclined surface a in fig. 1. In addition, a stable silicon nitride film having good film quality can be formed even in an environment where the temperature of the substrate during film formation is controlled to 200 ℃.
Hereinafter, an example of a film deposition apparatus for performing the film deposition method according to the present embodiment will be described with reference to fig. 2, and the film deposition method according to the present embodiment and its effects will be described in detail with reference to fig. 3 to 5.
[ film Forming apparatus ]
Fig. 2 is a schematic cross-sectional view showing an example of a film formation apparatus 100 for performing the film formation method according to the embodiment. The film forming apparatus 100 is an Inductively Coupled Plasma (ICP) processing apparatus that performs various substrate processing methods on a substrate G (hereinafter, simply referred to as a "substrate") having a rectangular shape in plan view for an FPD. The film deposition apparatus 100 is an example of a film deposition apparatus that executes the film deposition method according to the embodiment, and is not limited thereto.
As a material of the substrate, glass is mainly used, and a transparent synthetic resin or the like is sometimes used depending on the application. Here, the substrate processing includes film formation processing and etching processing. As the FPD, a Liquid Crystal Display (LCD) may be exemplified. And may be Electro Luminescence (EL), Plasma Display Panel (PDP), or the like. The substrate G has circuit patterns of the light emitting elements and the driving elements of the organic EL device 200 formed on the surface thereof. In addition, the flat panel size of the FPD substrate has been increased with the passage of time. The planar dimensions of the substrate G processed by the film formation apparatus 100 include, for example, at least about 1500mm × 1800mm in the 6 th generation to about 3000mm × 3400mm in the 10.5 th generation. The thickness of the substrate G is about 0.2mm to several mm.
The film forming apparatus 100 includes: a rectangular parallelepiped box-shaped processing chamber 10, a substrate mounting table 60 having a rectangular outer shape in plan view, which is disposed in the processing chamber 10 and on which a substrate G is mounted, and a control unit 90.
The processing chamber 10 is partitioned into upper and lower 2 spaces by a dielectric plate 11, an antenna chamber as an upper space is formed by an upper chamber 12, and a processing chamber S as a lower space is formed by a lower chamber 13. The processing chamber 10 is formed of a metal such as aluminum, and the dielectric plate 11 is formed of alumina (Al)2O3) Etc. ceramic, quartz. The dielectric plate 11 is an example of a window member of an inductively coupled plasma device, and the window member may be configured by a plurality of metal plates instead of the dielectric plate.
In the processing chamber 10, a rectangular ring-shaped support frame 14 is disposed so as to project toward the inside of the processing chamber 10 at a position that becomes a boundary between the lower chamber 13 and the upper chamber 12, and the dielectric plate 11 is placed on the support frame 14. The process chamber 10 is grounded by a ground line.
A carry-in/carry-out port 13b for carrying in/out the substrate G to/from the lower chamber 13 is opened in the side wall 13a of the lower chamber 13, and the carry-in/carry-out port 13b is freely opened and closed by the gate valve 20. The lower chamber 13 is adjacent to a transfer chamber (both not shown) of the inner package transfer mechanism, and the gate valve 20 is controlled to be opened and closed, so that the transfer mechanism carries in/out the substrate G through the carry-in/out port 13 b.
Further, a plurality of exhaust ports 13f are opened in a bottom plate 13d of the lower chamber 13. The exhaust port 13f is connected to a gas exhaust pipe 51, and the gas exhaust pipe 51 is connected to an exhaust device 53 via a pressure control valve 52. The gas exhaust pipe 51, the pressure control valve 52, and the exhaust device 53 form a gas exhaust unit 50. The exhaust unit 53 has a vacuum pump such as a turbo molecular pump, and can freely evacuate the lower chamber 13 to a predetermined degree of vacuum in the process.
A support beam for supporting the dielectric plate 11 is provided on the lower surface of the dielectric plate 11, and the support beam also serves as the shower head 30. The shower head 30 is made of metal such as aluminum, and surface treatment by anodic oxidation can be performed. A gas flow path 31 extending in the horizontal direction is formed in the shower head 30. The gas flow path 31 communicates with a gas discharge hole 32 of the processing chamber S extending downward and located below the shower head 30.
A gas introduction pipe 45 communicating with the gas flow path 31 is connected to the upper surface of the dielectric plate 11. The gas introduction pipe 45 penetrates the supply port 12b opened in the ceiling 12a of the upper chamber 12 in an airtight manner, and is connected to the process gas supply unit 40 via a gas supply pipe 41 airtightly connected to the gas introduction pipe 45. The process gas supply unit 40 includes a gas inlet pipe 45, a gas supply pipe 41, valves 42a and 42b, flow rate controllers 43a and 43b, and a SiF4 Gas supply sources 44a, and N2The gas supply source 44 b. SiF supplied from the process gas supply unit 404Gas and N2The gas is supplied to the shower head 30 through the gas supply pipe 41 and the gas introduction pipe 45, and is discharged into the processing chamber S through the gas flow path 31 and the gas discharge hole 32. In the case where a metal plate is used instead of the dielectric plate 11, the metal plate may be provided with gas discharge holes to serve as a shower head.
A high-frequency antenna 15 is disposed in the upper chamber 12 forming the antenna chamber. The high-frequency antenna 15 is formed by winding an antenna wire 15a made of conductive metal such as copper in a ring shape or a spiral shape. For example, the loop-shaped antenna wire 15a may be arranged in multiple numbers.
The terminal of the antenna 15a is connected to a feeding member 16 extending upward from the upper chamber 12, the upper end of the feeding member 16 is connected to a feeding line 17, and the feeding line 17 is connected to a high-frequency power supply 19 via a matching box 18 for impedance matching. High-frequency power of, for example, 13.56MHz is applied to the high-frequency antenna 15 from the high-frequency power supply 19, thereby forming an induced electric field in the lower chamber 13. The process gas supplied from the shower head 30 to the process chamber S is converted into plasma by the induced electric field, inductively coupled plasma is generated, and ions, neutral radicals, and the like in the plasma are supplied to the substrate G. The high-frequency power supply 19 is a source for generating plasma, and the high-frequency power supply 73 connected to the substrate mounting table 60 attracts generated ions to become a bias source for imparting kinetic energy. In this way, the ion source generates plasma by inductive coupling, and a bias source as another power source is connected to the substrate mounting table 60 to control ion energy. This makes it possible to independently perform plasma generation and ion energy control, thereby improving the degree of freedom of the process. The processing gas supply unit 40 and the high-frequency power supply 19 are examples of a plasma generating unit that generates plasma in the chamber by turning gas into plasma.
The substrate mounting table 60 includes a base 63 and an electrostatic chuck 66 formed on an upper surface 63a of the base 63. The base material 63 has a rectangular shape in plan view and has a planar size approximately equal to that of the substrate G placed on the substrate mounting table 60, and the length of the long side may be about 1800mm to 3400mm, and the length of the short side may be about 1500mm to 3000 mm. The thickness of the base material 63 may be, for example, about 50mm to 100mm with respect to the plane size. The base material 63 is formed of stainless steel, aluminum alloy, or the like. The base member 63 is provided with a meandering temperature control medium flow path 62a so as to cover the entire area of the rectangular plane. The temperature adjusting medium flow path 62a may be provided in the electrostatic chuck 66, for example.
The temperature-adjusting medium flow path 62a has, at both ends thereof, communication: a delivery pipe 62b for supplying the temperature adjusting medium to the temperature adjusting medium flow path 62a, and a return pipe 62c for discharging the temperature adjusting medium whose temperature has been increased by flowing through the temperature adjusting medium flow path 62 a. The delivery pipe 62b and the return pipe 62c communicate with the delivery passage 82 and the return passage 83, respectively, and the delivery passage 82 and the return passage 83 communicate with the cooler unit 81 provided in the external space E. The cooler unit 81 includes: a main body portion for controlling the temperature and discharge flow rate of the temperature adjusting medium, and a pump (not shown) for pumping the temperature adjusting medium. As the temperature adjusting medium, a refrigerant is used. The temperature control mode is a mode in which the temperature control medium is circulated through the base material 63, but may be a mode in which the base material 63 incorporates a heater or the like and temperature control is performed by a heater, or may be a mode in which temperature control is performed by both the temperature control medium and the heater. Further, instead of the heater, temperature adjustment accompanied by heating may be performed by circulating a temperature adjustment medium having a high temperature.
A box-shaped base 68 formed of an insulating material and having a stepped portion on the inner side is fixed to the bottom plate 13d of the lower chamber 13, and the substrate mounting table 60 is placed on the stepped portion of the base 68. An electrostatic chuck 66 on which a substrate G is directly placed is formed on the upper surface of the base member 63. The electrostatic chuck 66 has: a ceramic layer 64 that is a dielectric film formed by thermal spraying of a ceramic such as alumina, and a chuck electrode 65 that is a conductive layer embedded in the ceramic layer 64 and has an electrostatic chuck function. The adsorption electrode 65 is connected to a dc power supply 75 via a power supply line 74 and a switch 76. When the switch 76 is turned on by the control unit 90, a dc voltage is applied from the dc power supply 75 to the attracting electrode 65, and coulomb force is generated. The substrate G is electrostatically attracted to the electrostatic chuck 66 by the coulomb force and held in a state of being placed on the upper surface of the base member 63. When the switch 76 is closed and the switch 77 interposed between the ground lines branched from the power supply line 74 is opened, the electric charges accumulated in the adsorption electrode 65 flow to the ground. In this way, the substrate mounting table 60 forms a lower electrode on which the substrate G is mounted.
A temperature sensor such as a thermocouple is disposed on the base member 63, and monitor information based on the temperature sensor is transmitted to the control unit 90 as needed. The control section 90 performs temperature adjustment control of the base material 63 and the substrate G based on the transmitted monitor information of the temperature. More specifically, the temperature and the flow rate of the temperature control medium supplied from the cooler unit 81 to the conveyance channel 82 are adjusted by the control unit 90. Then, the temperature control medium whose temperature and flow rate have been adjusted circulates through the temperature control medium flow path 62a, and temperature control of the substrate mounting table 60 is performed. A temperature sensor such as a thermocouple may be provided in the electrostatic chuck 66, for example.
A rectangular frame-shaped focus ring 69 is placed on the upper surface of the base 68 which is the outer periphery of the electrostatic chuck 66, and the upper surface of the focus ring 69 is set to be lower than the upper surface of the electrostatic chuck 66. The focus ring 69 is made of ceramic such as alumina or quartz.
The lower surface of the base material 63 is connected to a power supply member 70. The lower end of the feeding member 70 is connected to a feeding line 71, and the feeding line 71 is connected to a high-frequency power source 73 as a bias source via a matching box 72 for impedance matching. When a high-frequency power of, for example, 3.2MHz is applied to the substrate mounting table 60 from the high-frequency power supply 73, the substrate mounting table 60 functions as a lower electrode, and ions generated in the high-frequency power supply 19 serving as a source for generating plasma can be attracted to the substrate G.
A plurality of, for example, 12 lift pins 78 for lifting and lowering the substrate G are provided in the substrate mounting table 60 so as to exchange the substrate G with a transfer arm, not shown, outside the processing chamber 10. In fig. 1, 2 lift pins 78 are shown in a simplified manner. The plurality of lift pins 78 penetrate the substrate mounting base 60 and move up and down by the power of the motor transmitted through the connecting member. A bottom bellows (not shown) is provided in a through hole of the lift pin 78 that penetrates the outside of the processing container, and maintains airtightness between the vacuum side and the atmosphere side in the processing container.
The control unit 90 controls operations of the respective components of the film formation apparatus 100, such as the cooler unit 81, the high- frequency power supplies 19 and 73, the dc power supply 75, the process gas supply unit 40, and the gas exhaust unit 50. The control unit 90 includes memories such as a cpu (central Processing unit), a rom (read Only memory), and a ram (random Access memory). The CPU executes a predetermined process in accordance with a process program (process program) stored in a memory area of the memory. In the process program, control information of the film forming apparatus 100 for process conditions is set. The control information includes, for example, a gas flow rate, a pressure in the processing chamber 10, a temperature of the substrate 63, a process time, and the like.
The process program and program applied by the control unit 90 may be stored in, for example, a hard disk, an optical disk, a magneto-optical disk, or the like. The process program may be stored in a storage medium readable by a portable computer such as a CD-ROM, DVD, or memory card, and then loaded into the control unit 90 to be read out. The control unit 90 further includes: a keyboard or an input device such as a mouse for inputting commands, a display device such as a display for visually displaying the operation of the film deposition apparatus 100, and a user interface such as an output device such as a printer.
[ film Forming method ]
Next, a film formation method according to the present embodiment, which is executed by the film formation apparatus 100 of fig. 2, will be described with reference to fig. 3 and 4. Fig. 3 is a flowchart illustrating an example of the film forming method according to the embodiment. Fig. 4 is a timing chart showing an example of the film forming method according to the embodiment. In the initial state, the valves 42a, 42b of fig. 2 are closed.
First, in step S1 of fig. 3, a substrate W is placed on the substrate placement table 60 and prepared. The substrate W is transported from the carry-in/carry-out port 13b into the processing chamber 10 by opening and closing the gate valve 20, for example, and is placed on the substrate placing table 60. Next, in step S2 of fig. 3, the temperature-adjusting medium of a desired temperature is circulated from the cooler unit 81 through the temperature-adjusting medium flow path 62a of the substrate mounting table 60, and the temperature of the substrate is controlled to a predetermined temperature of 100 ℃. The inside of the processing chamber 10 is depressurized to a predetermined degree of vacuum.
Next, in step S3 of fig. 3, the valve 42a of fig. 2 is opened in the process gas supply unit 40, and SiF is switched on4The gas supply source 44a supplies SiF, which is an example of a silicon halide gas, into the processing chamber 10 through the gas introduction pipe 454A gas. Thus, the SiF of the 1 st cycle of FIG. 4 is started4Supply of gas, SiF4Gas molecules adhere to the surface of the substrate.
When a predetermined time (for example, 10 seconds) has elapsed after the valve 42a is opened, SiF is set in step S4 of fig. 34The residual gas of the gas is removed for another prescribed time (e.g., 10 seconds). At this time, the valve 42a of FIG. 2 is closed, and the SiF is stopped4Gas self SiF4Supply of the gas supply source 44 a. Thus, SiF4The gas is exhausted from the processing chamber 10, SiF4Residual gas of gas isAnd (5) removing. This step is a step of supplying a source gas for forming a silicon nitride film (hereinafter referred to as "step a"). While step S4 is being performed, an inert gas such as Ar gas or He gas may be supplied into the process chamber 10. Thereby, SiF is generated by the inactive gas4Gas exhausted from the processing chamber 10, SiF4The residual gas of the gas is removed. The valve 42a is opened for a predetermined time and SiF is removed4The predetermined time of the residual gas of the gas may be set to the same time or may be set to different times.
Next, in step S5 of fig. 3, the process gas supply unit 40 supplies N as an example of the nitrogen-containing gas2A gas. Next, in step S6 of fig. 3, a high-frequency power (rf (radio frequency) power) is applied from the high-frequency power supply 19. The timing of applying the high-frequency power may be N2After the timing of gas supply, N may be added2The gas is supplied simultaneously. Thus, N of the 1 st cycle of FIG. 4 is started2Supply of gas and start of supply of RF power, N2The gas is ionized by high-frequency electric power to generate N2A plasma of gas. By using N2Plasma of gas, SiF attached to the surface of the substrate4The gas molecules are ionized by the high-frequency electric power into atoms containing Si and F, and similarly react with the ionized N atoms to form a silicon nitride film.
When a predetermined time (for example, 10 seconds) has elapsed after the valve 42b is opened, N is removed in step S7 of fig. 32Residual gas of the gas for another prescribed time (e.g., 10 seconds). At this time, valve 42b of FIG. 2 is closed, and N is stopped2Gas from N2Supply of the gas supply source 44 b. In addition, the application of the high-frequency power is stopped. This step is a step of supplying a reaction gas for forming a silicon nitride film (hereinafter referred to as "step B"). During the execution of step S7, an inert gas may be supplied into the process chamber 10. Thereby, N is converted from the inert gas2Gas exhaust from the process chamber 10, N2The residual gas of the gas is removed. The valve 42b is opened for a predetermined time and N is removed2The predetermined time of the residual gas of the gas may be set to the same timeOr may be set to different times.
Next, in step S8 of fig. 3, it is determined whether or not step A, B is repeatedly executed X times, as to whether or not the silicon nitride film has reached a predetermined film thickness. The film thickness of the silicon nitride film is made to correspond to the number of times step A, B is performed, and when step A, B is repeated X times, the silicon nitride film has a predetermined film thickness. In other words, the step A, B is repeated X times corresponding to the predetermined film thickness reached by the silicon nitride film. X is an integer of 1 or more. In step S8, step A, B is repeated until it is determined that the execution is performed X times. Thus, as shown in fig. 4, the step (A, B) of the 2 nd cycle, the step (A, B) of the 3 rd cycle, and the step (A, B) of the X th cycle are sequentially executed. When it is determined at step S8 in fig. 3 that step (A, B) is executed X times, the process proceeds to step S9, where the substrate is unloaded, and the process is terminated.
The number of repetitions X may be set in advance, or may be set in real time based on the measurement result by, for example, optically measuring the thickness of the silicon nitride film in real time.
An example of the evaluation of the characteristics of the silicon nitride film by the film formation method according to the present embodiment described above will be described while comparing with the comparative example with reference to fig. 5. Fig. 5 is a diagram showing an example of characteristic evaluation of a silicon nitride film by the film formation methods of the embodiment and the comparative example.
As shown in fig. 5, the film formation method of the present embodiment forms a film by the ALD method, and forms a film by the CVD method in the comparative example. In the film formation method of the present embodiment, the temperature of the substrate during film formation is controlled to 100 ℃ and 200 ℃, and in the comparative example, the temperature of the substrate during film formation is controlled to 100 ℃. In addition, SiF was used4Gas and N2A gas.
As a result, b/a (the ratio of the film thickness b of the tapered portion shown in fig. 5 to the film thickness a of the upper portion of the silicon nitride film) indicating the coverage of the tapered portion (the inclined surface a in fig. 1) was substantially 0 in the comparative example (that is, in a state where the silicon nitride film was not formed in the tapered portion). In contrast, in the film formation method of the present embodiment, when the substrate temperature is 100 ℃, b/a is "0.37", and a silicon nitride film may be formed in the tapered portion. Further, when the temperature of the substrate was 200 ℃, b/a was "0.47". That is, in the film formation method of the present embodiment, by forming the film by the ALD method based on the process conditions described above, the silicon nitride film can be formed also in the tapered portion, and it is proved that the silicon nitride film having a good coverage can be formed. In the case of the comparative example, the taper angle θ was 73 °, in the case of the present embodiment, the taper angle θ was 72 ° when the temperature of the substrate was 100 ℃, and the taper angle θ was 77 ° when the temperature of the substrate was 200 ℃.
Further, the refractive index (RI: refractive index) of the silicon nitride film, which is an index of film quality, is "1.79" in the case of the comparative example, and is "1.91" in the case of the present embodiment when the temperature of the substrate is 100 ℃. When the refractive index RI of the film is 1.9 to 2.0, the film quality can be evaluated as good. As a result, the film formation method of the present embodiment can form a silicon nitride film having a better film quality than the film formation method of the comparative example by the CVD method.
As described above, according to the film formation method of the present embodiment, the temperature of the substrate during film formation is controlled to 200 ℃ or lower, preferably 100 ℃ or lower. Then, by repeating the ALD method of supplying the gas containing the silicon halide gas → evacuating → supplying the nitrogen-containing gas → evacuating X times, the sealing film which is a silicon nitride film is formed on the light-emitting element of the organic EL device 200.
According to the film formation method, a silicon nitride film having a good coverage and good film quality can be formed on the tapered portion such as the inclined surface a on the light emitting element. Further, even in an environment in which the temperature of the substrate during film formation is controlled to a low temperature of 200 ℃ or lower, the coverage is good, and a silicon nitride film having good film quality characteristics can be formed. In the step of forming the sealing film of a silicon nitride film on the light-emitting element having low heat resistance, according to the film formation method of the present embodiment, when the temperature of the substrate is controlled to 100 ℃.
In the film forming method of the present embodiment, the gas used is consideredVarious changes are considered. For example, the silicon halide gas contained in the gas containing the silicon halide gas is not limited to silicon tetrafluoride gas (SiF)4). The gas containing the silicon halide gas may contain silicon tetrafluoride gas (SiF)4) Silicon tetrachloride gas (SiCl)4) Silicon hexafluoride (Si)2F6) And silicon hexachloride gas (Si)2Cl6) At least any one of.
The nitrogen-containing gas is not limited to nitrogen (N)2). The nitrogen-containing gas may comprise nitrogen (N)2) And ammonia (NH)3) At least any one of.
Further, H may be added to the nitrogen-containing gas2The gas may be a rare gas such as He gas or Ar gas. By addition of H2Gas, thereby making the coverage of the silicon nitride film more satisfactory.
However, addition of H2The concentration of the gas is preferably adjusted so that the hydrogen concentration in the silicon nitride film becomes 15% or less. This is due to the fact that it is derived from H2The hydrogen in the gas is bonded to fluorine remaining in the silicon nitride film in excess to remove the fluorine, and thereby deterioration of the film quality of the fluorine-based silicon nitride film can be suppressed. However, H2If the amount of gas is excessively increased, hydrogen that does not bind to fluorine remains even if fluorine is removed, and there is a concern that the light-emitting element formed on the surface of the substrate and the driving element including an oxide semiconductor that drives the light-emitting element may be deteriorated by hydrogen.
As described above, according to the method and apparatus for forming a silicon nitride film of the present embodiment, a silicon nitride film having a good coverage can be formed even in an environment where the temperature of the substrate is 200 ℃.
The method and apparatus for forming a silicon nitride film according to the embodiment disclosed herein are all examples, and should not be construed as being limited thereto. The embodiments may be modified and improved in various ways without departing from the spirit and scope of the appended claims. The features described in the above embodiments may be configured in other ways within a range not inconsistent with the scope of the claims, and may be combined within a range not inconsistent with the scope of the claims.
The film forming apparatus of the present disclosure may also be used for any type of apparatus of an Atomic Layer Deposition (ALD) apparatus, a Capacitive Coupled Plasma (CCP), an Inductively Coupled Plasma (ICP), a Radial Line Slot Antenna (RLSA), a microwave Electron Cyclotron Resonance Plasma (ECR), and a Helicon Wave Plasma (HWP).

Claims (9)

1. A method for forming a silicon nitride film on a substrate housed in a process chamber, the method comprising:
a step (a) of supplying a gas containing a silicon halide gas into the processing chamber without supplying a high-frequency power;
a step (b) of stopping the supply of the gas containing the silicon halide gas and exhausting the inside of the processing chamber after the step (a);
a step (c) of supplying a nitrogen-containing gas into the processing chamber after the step (b);
a step (d) of supplying the high-frequency power into the process chamber to generate plasma after the step (c);
a step (e) of, after the step (d), stopping the supply of the nitrogen-containing gas and the supply of the high-frequency power and exhausting the inside of the processing chamber; and the combination of (a) and (b),
repeating the steps (a) to (e) X times corresponding to the formation of the silicon nitride film having a predetermined film thickness, wherein X.gtoreq.1,
in the steps (a) to (e), the temperature of the substrate is controlled to 200 ℃ or lower.
2. The method for forming a silicon nitride film according to claim 1, wherein the gas containing a silicon halide gas contains silicon tetrafluoride gas (SiF)4) Silicon tetrachloride gas (SiCl)4) Silicon hexafluoride (Si)2F6) And hexachloro benzeneSilicon dioxide gas (Si)2Cl6) At least any one of.
3. The method for forming a silicon nitride film according to claim 1 or 2, wherein the nitrogen-containing gas contains nitrogen (N)2) And ammonia (NH)3) At least any one of.
4. The method of forming a silicon nitride film according to any one of claims 1 to 3, wherein a plurality of concave portions and convex portions are formed on the surface of the substrate, at least a part of side surfaces of the concave portions or the convex portions are formed with inclined surfaces, and the silicon nitride film is formed at least on the inclined surfaces.
5. The method of forming a silicon nitride film according to any one of claims 1 to 4, wherein a layer containing an oxide semiconductor is formed on the surface of the substrate.
6. The method of forming a silicon nitride film according to claim 5, wherein the silicon nitride film is a sealing film for sealing a light-emitting element formed on the surface of the substrate and a driving element including the oxide semiconductor for driving the light-emitting element.
7. The method of forming a silicon nitride film according to any one of claims 1 to 6, wherein the temperature of the substrate is controlled to 100 ℃ or lower in the steps (a) to (e).
8. The method for forming a silicon nitride film according to any of claims 1 to 7, wherein H is added to the nitrogen-containing gas at a predetermined concentration2A gas and/or a noble gas.
9. A film forming apparatus for forming a silicon nitride film on a substrate accommodated in a process chamber, the film forming apparatus comprising a process chamber and a control unit,
the control unit is configured to control the following steps:
a step (a) of supplying a gas containing a silicon halide gas into the processing chamber without supplying a high-frequency power;
a step (b) of stopping the supply of the gas containing the silicon halide gas and exhausting the inside of the processing chamber after the step (a);
a step (c) of supplying a nitrogen-containing gas into the processing chamber after the step (b);
a step (d) of supplying the high-frequency power into the process chamber to generate plasma after the step (c);
a step (e) of, after the step (d), stopping the supply of the nitrogen-containing gas and the supply of the high-frequency power and exhausting the inside of the processing chamber; and the combination of (a) and (b),
repeating the steps (a) to (e) X times until a silicon nitride film having a predetermined thickness is formed, wherein X.gtoreq.1,
further, in the steps (a) to (e), the temperature of the substrate is controlled to 200 ℃ or lower.
CN202111318553.8A 2020-11-18 2021-11-09 Method and apparatus for forming silicon nitride film Pending CN114517289A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020191483A JP2022080422A (en) 2020-11-18 2020-11-18 Deposition method for silicon nitride film and deposition device
JP2020-191483 2020-11-18

Publications (1)

Publication Number Publication Date
CN114517289A true CN114517289A (en) 2022-05-20

Family

ID=81594134

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111318553.8A Pending CN114517289A (en) 2020-11-18 2021-11-09 Method and apparatus for forming silicon nitride film

Country Status (4)

Country Link
JP (1) JP2022080422A (en)
KR (1) KR20220068154A (en)
CN (1) CN114517289A (en)
TW (1) TW202225454A (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000114257A (en) * 1998-10-06 2000-04-21 Toshiba Corp Manufacture of semiconductor device
CN1701424A (en) * 2003-01-24 2005-11-23 东京毅力科创株式会社 Method of CVD for forming silicon nitride film on substrate
JP2010283385A (en) * 2010-09-07 2010-12-16 Tokyo Electron Ltd Method and device for forming silicon nitride film, and program
US20120220137A1 (en) * 2011-02-28 2012-08-30 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and method of processing substrate and substrate processing apparatus
US20130171838A1 (en) * 2011-10-07 2013-07-04 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and non-transitory computer-readable recording medium
CN104250724A (en) * 2013-06-28 2014-12-31 东京毅力科创株式会社 Forming method of multi-layer protective film and forming device of multi-layer protective film
JP2018011009A (en) * 2016-07-15 2018-01-18 東京エレクトロン株式会社 Deposition method and deposition apparatus of nitride film
US20180323056A1 (en) * 2017-05-08 2018-11-08 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US20180366315A1 (en) * 2017-06-15 2018-12-20 Tokyo Electron Limited Film Forming Method, Film Forming Apparatus, and Storage Medium
CN110364433A (en) * 2018-03-26 2019-10-22 东京毅力科创株式会社 Film build method and film formation device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020064924A (en) 2018-10-16 2020-04-23 東京エレクトロン株式会社 Method of forming nitride film and method of manufacturing semiconductor device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000114257A (en) * 1998-10-06 2000-04-21 Toshiba Corp Manufacture of semiconductor device
CN1701424A (en) * 2003-01-24 2005-11-23 东京毅力科创株式会社 Method of CVD for forming silicon nitride film on substrate
JP2010283385A (en) * 2010-09-07 2010-12-16 Tokyo Electron Ltd Method and device for forming silicon nitride film, and program
US20120220137A1 (en) * 2011-02-28 2012-08-30 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and method of processing substrate and substrate processing apparatus
US20130171838A1 (en) * 2011-10-07 2013-07-04 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and non-transitory computer-readable recording medium
CN104250724A (en) * 2013-06-28 2014-12-31 东京毅力科创株式会社 Forming method of multi-layer protective film and forming device of multi-layer protective film
JP2018011009A (en) * 2016-07-15 2018-01-18 東京エレクトロン株式会社 Deposition method and deposition apparatus of nitride film
US20180323056A1 (en) * 2017-05-08 2018-11-08 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US20180366315A1 (en) * 2017-06-15 2018-12-20 Tokyo Electron Limited Film Forming Method, Film Forming Apparatus, and Storage Medium
CN110364433A (en) * 2018-03-26 2019-10-22 东京毅力科创株式会社 Film build method and film formation device

Also Published As

Publication number Publication date
KR20220068154A (en) 2022-05-25
TW202225454A (en) 2022-07-01
JP2022080422A (en) 2022-05-30

Similar Documents

Publication Publication Date Title
US20170221720A1 (en) Apparatus and method for treating substrates
US10381454B2 (en) Interface engineering for high capacitance capacitor for liquid crystal display
US20150206763A1 (en) Etching method, etching apparatus, and ring member
TWI665730B (en) Method for forming multilayer protective film and device for forming multilayer protective film
KR101870491B1 (en) Plasma processing appratus, substrate processing system, fabrication method of thin film transistor, and storage medium
CN108866508B (en) Film forming method and film forming apparatus
KR20070086761A (en) Etching method and etching apparatus
US10049870B2 (en) Method of manufacturing semiconductor device including silicon nitride layer for inhibiting excessive oxidation of polysilicon film
CN110544628A (en) method for etching film and plasma processing apparatus
JP6760439B2 (en) Manufacturing method of thin film and storage medium
KR101972148B1 (en) Organic device manufacturing method and organic device manufacturing apparatus
CN107154333A (en) Substrate board treatment
JP5941653B2 (en) Silicon nitride film forming method and silicon nitride film forming apparatus
TWI813075B (en) Structure and method of advanced lcos back-plane having robust pixel via metallization
KR20180008310A (en) Plasma etching method, plasma etching apparatus and substrate mounting table
KR20200090133A (en) Film etching method for etching film
US20090203219A1 (en) Plasma etching method, plasma etching apparatus and computer-readable storage medium
US10224432B2 (en) Surface treatment process performed on devices for TFT applications
CN107731681B (en) Plasma etching method and plasma etching system
CN114517289A (en) Method and apparatus for forming silicon nitride film
CN108257862B (en) Method for manufacturing semiconductor device, substrate processing apparatus, and storage medium
US20090314635A1 (en) Plasma processing apparatus, plasma processing method, and organic electron device
CN110808228A (en) Etching method and method for manufacturing semiconductor device
KR20140113386A (en) Organic device manufacturing method, organic device manufacturing apparatus and organic device
KR100866935B1 (en) Plasma processing apparatus and plasma processing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination