CN114517023B - Bottom anti-reflection coating composition, preparation method thereof and microelectronic structure forming method - Google Patents

Bottom anti-reflection coating composition, preparation method thereof and microelectronic structure forming method Download PDF

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CN114517023B
CN114517023B CN202210102218.2A CN202210102218A CN114517023B CN 114517023 B CN114517023 B CN 114517023B CN 202210102218 A CN202210102218 A CN 202210102218A CN 114517023 B CN114517023 B CN 114517023B
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coating composition
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bottom anti
antireflective coating
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CN114517023A (en
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毛鸿超
李禾禾
王静
肖楠
宋里千
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Fujian Shuguang Semiconductor Materials Co ltd
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Fujian Shuguang Semiconductor Materials Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/63—Additives non-macromolecular organic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Abstract

The invention belongs to the field of photoresist, and relates to a bottom anti-reflection coating composition, a preparation method thereof and a forming method of a microelectronic structure. The bottom anti-reflection coating composition contains a modified rigid organic cage compound, a vinyl ether compound and an organic solvent, wherein the modified rigid organic cage compound is obtained by modifying and converting part of phenolic hydroxyl groups in the rigid organic cage compound into modified groups, and the general formula of the modified groups is-O-R 1 ，R 1 Is a chromophore, an acid labile group, an acidic group, or a non-functional group; the vinyl ether compound has more than two vinyl ether end groups. The bottom anti-reflective coating composition provided by the invention is not soluble in an organic solvent or a photoresist alkaline developer after being heated and crosslinked, but can be decrosslinked after being exposed in the presence of acid, so that an exposed part can be removed by the alkaline developer, but an unexposed part is not removed, and the residue of the bottom anti-reflective coating after being developed can be reduced.

Description

Bottom anti-reflection coating composition, preparation method thereof and microelectronic structure forming method
Technical Field
The invention belongs to the field of photoresist, and particularly relates to a bottom anti-reflection coating composition, a preparation method thereof and a forming method of a microelectronic structure.
Background
Photoresist is a photosensitive composition that can be used to transfer an image to a substrate. First, a photoresist layer is formed on a substrate and then exposed to an activating radiation source through a photomask, wherein the photomask has both regions that are transparent to the activating radiation source and other regions that are opaque to the activating radiation source. Wherein the activating radiation source can cause a photo-or chemical change in the exposed photoresist layer to effect a transfer of the photomask pattern to the substrate on which the photoresist is disposed. After exposure, the photoresist is developed to produce a patterned image that enables selective processing of the substrate.
In the microetching process, photoresist is used in the manufacture of computer chips and integrated circuits with the goal of converting a semiconductor wafer, such as silicon or gallium arsenide, into a composite matrix having electrically conductive paths for performing circuit functions. Selecting a reasonable photoresist lithography process becomes a key element for achieving this goal. The overall lithographic process involves multiple steps that simultaneously interact with each other, but the exposure is certainly believed to play a critical role in forming high resolution photoresist images.
In recent years, with the trend of the integration of semiconductor devices, there is a trend toward conversion of active light used to KrF excimer laser and ArF excimer laser, which has also promoted a demand for various high-performance materials for advanced processes. However, it is accompanied by an increasingly pronounced standing wave effect within the photoresist due to the reflection of radiation by the substrate, resulting in non-uniform exposure of the photoresist and wavelike jagged defects in the sidewalls of the pattern, thereby increasing the edge roughness of the photoresist. Therefore, in order to solve the above problems, one effective method is to use a light absorbing layer, i.e., a bottom anti-reflective coating, between the substrate and the photoresist layer. Such bottom anti-reflective coatings must be well matched to the photoresist and any other layers used in the imaging process to achieve high resolution lithographic objectives.
From the viewpoint of material classification, the bottom anti-reflective coating may be divided into an inorganic anti-reflective coating layer composed of a material including titanium, titanium dioxide, titanium nitride, amorphous silicon, etc., and an organic anti-reflective coating layer composed of a polymer, an oligomer, an organic compound. The organic anti-reflective layer does not require complicated and expensive systems such as vacuum deposition equipment, a Chemical Vapor Deposition (CVD) device, a sputtering device, and the like, as compared to the inorganic anti-reflective layer, and thus is widely used. From the etching perspective, the bottom anti-reflective coating includes two types, i.e., dry etching and developer etching. Dry etch bottom anti-reflective coatings are common, i.e., etching materials by exposing the material to a chlorine-or fluorine-based etchant plasma, has a number of significant technical advantages. However, the plasma etching process thins the photoresist layer, and if the organic anti-reflective coating layer is not well matched with the photoresist layer, the photoresist pattern may be damaged and thus may not be transferred to the substrate. This is especially true in view of the fact that the photoresist layers used in advanced processes are typically very thin. On the other hand, the developable BARC design allows it to be removed simultaneously during the photoresist development process without additional etching process, which not only avoids the damage of plasma etching to the photoresist layer and substrate, but also reduces the lithography cost and complexity of the process operation. Currently, manufacturers are still striving to improve the performance of such developable bottom anti-reflective coatings to facilitate their use within the integrated circuit industry during electronics. At present, the developable bottom anti-reflection coating material generally adopts a high molecular material, and the high molecular material is difficult to completely remove by an alkaline developing solution due to the high molecular weight of the high molecular material.
Disclosure of Invention
The invention aims to overcome the defect that the existing bottom anti-reflection coating is difficult to remove by an alkaline developing solution, and provides a bottom anti-reflection coating composition easy to remove by the developing solution, a preparation method thereof and a forming method of a microelectronic structure.
Specifically, the invention provides a bottom anti-reflective coating composition, wherein the bottom anti-reflective coating composition contains a modified rigid organic cage compound, a vinyl ether compound and an organic solvent, the modified rigid organic cage compound is a compound obtained by modifying and converting part of phenolic hydroxyl groups in the rigid organic cage compound into modified groups, and the modified groups have a general formula of-O-R 1 ，R 1 Is a chromophore, an acid labile group, an acidic group, or a non-functional group; the rigid organic cage-shaped compound is a compound which is prepared from glutaraldehyde and resorcinol by a dynamic covalent chemical method, contains 24 phenolic hydroxyl groups, has 6 holes on the side surface of a molecule, has a hydrophobic hollow structure and has a cage-shaped structure in the whole molecule; the vinyl ether compound has more than two vinyl ether end groups.
In a preferred embodiment, the rigid organic cage compound is prepared according to the following method: in the presence of non-oxidation acid and under the protection of inert gas, resorcinol and glutaraldehyde are subjected to condensation reaction in an alcohol solvent at 70-80 ℃ for 40-60 h according to a molar ratio of (4-6) to 1, after the reaction is finished, the obtained condensation reaction solution is subjected to alcohol precipitation crystallization and filtration, and the obtained solid product is subjected to ether washing and drying to obtain the rigid organic cage-shaped compound.
In a preferred embodiment, the non-oxidized acid is selected from at least one of concentrated hydrochloric acid, p-toluenesulfonic acid, and trifluoroacetic acid.
In a preferred embodiment, the alcoholic solvent is selected from at least one of ethanol, isopropanol, and butanol.
In a preferred embodiment, the solvent used for alcohol precipitation is methanol.
In a preferred embodiment, the ether is diethyl ether.
In a preferred embodiment, the modified rigid organic cage compound is a compound obtained by modifying and converting 2 to 22 phenolic hydroxyl groups in the rigid organic cage compound into modifying groups.
In a preferred embodiment, the chromophore is represented by the structure shown in formula (1); the acid labile group is represented by the structures represented by formulas (2) to (4); the acid group is carboxyl, phenolic hydroxyl or fluorinated alcohol group; the non-functional group is C 1 ～C 10 Alkyl or C 3 ～C 10 Cycloalkyl of (a);
Figure BDA0003492836140000031
R 2 is- (CH) 2 ) n1 -O-or- (CH) 2 ) n2 -，n 1 Is 1 to 6,n 2 Is 0 to 6; r 3 Is- (CH) 2 ) n3 -O-、-O-(CH 2 ) n4 -or- (CH) 2 ) n5 -，n 3 And n 4 Each independently of the others is 1 to 6,n 5 Is 0 to 6; r 4 Is optionally selected fromSubstituted C 6 ～C 20 And (4) an aryl group.
In a preferred embodiment, the chromophoric group-containing modifying group accounts for 0 to 50%, the acid-labile group-containing modifying hydroxyl group accounts for 0 to 40%, the acid-group-containing modifying hydroxyl group accounts for 0 to 20%, and the non-functional group-containing modifying hydroxyl group accounts for 0 to 40%, based on the total content of the modifying groups.
In a preferred embodiment, the mass ratio of the modified rigid organic cage compound to the vinyl ether compound is (0.1 to 25): 1.
In a preferred embodiment, the vinyl ether compound has the formula R 5 -(R 6 -O-CH＝CH 2 ) n6 Wherein R is 5 Is a single bond, O, C 1 ～C 5 Alkylene radical, C 1 ～C 18 Alkyleneoxy group, C 6-20 Aryl radical, C 1-18 Alkyl or C 3-18 Cycloalkyl radical, each R 6 Each independently is a single bond, C 1-18 Alkylene radical, C 1-18 Alkylene oxide, carbonyl and one of the combination of at least two of the above groups, wherein n6 is more than or equal to 2.
In a preferred embodiment, the vinyl ether compound is selected from structures represented by formulas (5) to (9):
Figure BDA0003492836140000032
in a preferred embodiment, the bottom antireflective coating composition further comprises at least one of a photoacid generator, a quencher, a surfactant, and other additives.
In a preferred embodiment, the modified rigid organic cage compound is contained in an amount of 0.2 to 10wt%, the vinyl ether-based compound is contained in an amount of 0.1 to 10wt%, the photoacid generator is contained in an amount of 0.005 to 0.1wt%, the quencher is contained in an amount of 0.001 to 0.05wt%, the surfactant is contained in an amount of 0.01 to 0.5wt%, the other additive is contained in an amount of 0 to 1wt%, the organic solvent is contained in an amount of 90 to 99wt%, and the total content of the components is 100wt%, based on the total weight of the bottom anti-reflective coating composition taken as 100 wt%.
The present invention also provides a method for preparing the bottom anti-reflective coating composition, wherein the method comprises uniformly mixing the modified rigid organic cage compound, the vinyl ether compound and the organic solvent, and optionally the photoacid generator, the quencher, the surfactant and other additives.
In addition, the invention also provides a method for forming the microelectronic structure, wherein the method comprises the following steps;
s1, providing a substrate or providing a modified substrate with an intermediate layer arranged on the surface;
s2, forming a bottom anti-reflection coating on the surface of the substrate or the surface of the middle layer of the modified substrate by adopting the bottom anti-reflection coating composition, then forming a photoresist layer on the bottom anti-reflection coating, exposing the surface of the photoresist layer according to a pattern required to be formed, baking and soaking in an alkaline developing solution; the photoresist layer and/or the bottom antireflective coating layer contain a photoacid generator.
The bottom anti-reflective coating composition provided by the invention is not soluble in an organic solvent or a photoresist alkaline developer after being heated and crosslinked, but can be uncrosslinked after being exposed in the presence of acid, so that an exposed part can be removed by the alkaline developer, but an unexposed part is not removed, and the residue of the bottom anti-reflective coating after development can be reduced.
Detailed Description
The bottom anti-reflective coating composition provided by the invention contains the modified rigid organic cage compound, the vinyl ether compound and the organic solvent, and preferably also contains at least one of a photoacid generator, a quencher, a surfactant and other additives. Wherein, the mass ratio of the modified rigid organic cage compound to the vinyl ether compound is (0.1 to 25) preferably from 1 to 0.1. The modified rigid organic cage compound preferably comprises 0.2 to 10wt%, more preferably 0.2 to 5wt%, such as 0.2wt%, 0.5wt%, 1wt%, 2wt%, 3wt%, 4wt%, 5wt%, etc., of the bottom antireflective coating composition. The vinyl ether-based compound is preferably contained in an amount of 0.1 to 10wt%, more preferably 5 to 10wt%, such as 5wt%, 5.5wt%, 6wt%, 6.5wt%, 7wt%, 7.5wt%, 8wt%, 8.5wt%, 9wt%, 9.5wt%, 10wt%, etc., of the bottom anti-reflective coating composition. The photoacid generator is preferably present in an amount of 0.005 to 0.1wt%, more preferably 0.01 to 0.05wt%, such as 0.01wt%, 0.02wt%, 0.03wt%, 0.04wt%, 0.05wt%, etc., of the bottom anti-reflective coating composition. The quencher is preferably present in an amount of 0.001 to 0.05wt%, more preferably 0.001 to 0.005wt%, such as 0.001wt%, 0.002wt%, 0.003wt%, 0.004wt%, 0.005wt%, etc., of the bottom antireflective coating composition. The surfactant is preferably contained in an amount of 0.01 to 0.5wt%, more preferably 0.01 to 0.1wt%, such as 0.01wt%, 0.02wt%, 0.03wt%, 0.04wt%, 0.05wt%, 0.06wt%, 0.07wt%, 0.08wt%, 0.09wt%, 0.1wt%, etc., of the bottom anti-reflective coating composition. The content of the other additive is preferably 0 to 1wt%, more preferably 0 to 0.5wt%, such as 0, 0.02wt%, 0.05wt%, 0.08wt%, 0.1wt%, 0.2wt%, 0.3wt%, 0.4wt%, 0.5wt%, etc., of the bottom anti-reflective coating composition. The content of the organic solvent is preferably 90 to 99wt%, more preferably 93 to 97wt%, such as 93wt%, 94wt%, 95wt%, 96wt%, 97wt%, etc., of the bottom anti-reflective coating composition.
In a preferred embodiment, the modified rigid organic cage compound is contained in an amount of 0.2 to 10wt%, the vinyl ether-based compound is contained in an amount of 0.1 to 10wt%, the photoacid generator is contained in an amount of 0.005 to 0.1wt%, the quencher is contained in an amount of 0.001 to 0.05wt%, the surfactant is contained in an amount of 0.01 to 0.5wt%, the other additives are contained in an amount of 0 to 1wt%, the organic solvent is contained in an amount of 90 to 99wt%, and the total amount of the components is 100% based on 100wt% of the total weight of the bottom anti-reflective coating composition, in which case the components can be perfectly matched, and the corresponding bottom anti-reflective coating composition can be more easily removed after exposure to light in the presence of an acid.
The modified rigid organic caged compound is obtained by modifying and converting part of phenolic hydroxyl groups in the rigid organic caged compound into modification groups, preferably 2-22 phenolic hydroxyl groups in the rigid organic caged compound are modified and converted into modification groups, and at least two or more phenolic hydroxyl groups can be reserved. The rigid organic cage-shaped compound is a compound which is prepared from glutaraldehyde and resorcinol by a dynamic covalent chemical method, contains 24 phenolic hydroxyl groups, has 6 holes on the side surface of a molecule, has a hydrophobic hollow structure and has a cage-shaped structure in the whole molecule. The specific structure of the rigid organic cage-shaped compound is shown as a formula (10), and the molecular weight of the rigid organic cage-shaped compound is 1706 daltons.
Figure BDA0003492836140000051
In a preferred embodiment, the rigid organic cage compound is prepared according to the following method: in the presence of non-oxidation acid and under the protection of inert gas, resorcinol and glutaraldehyde are subjected to condensation reaction in an alcohol solvent at 70-80 ℃ for 40-60 h according to a molar ratio of (4-6) to 1, after the reaction is finished, the obtained condensation reaction solution is subjected to alcohol precipitation crystallization and filtration, and the obtained solid product is subjected to ether washing and drying to obtain the rigid organic cage-shaped compound. Specific examples of the non-oxidizing acid include, but are not limited to: at least one of concentrated hydrochloric acid, p-toluenesulfonic acid and trifluoroacetic acid. The ratio of the non-oxidized acid to the resorcinol may be (100-150) mL:1mol. Specific examples of the alcohol solvent include, but are not limited to: at least one of ethanol, isopropanol, and butanol. The dosage ratio of the alcohol solvent to the resorcinol can be (2000-4000) mL:1mol. The solvent adopted for alcohol precipitation crystallization is preferably methanol. The ether is preferably diethyl ether. In addition, the inert gas refers to various gases that do not react with the raw material and the product, and includes at least one of nitrogen and a group zero element gas.
The phenolic hydroxyl group which is not modified and converted in the modified rigid organic cage-shaped compound can react with the vinyl ether compound through heating to form a crosslinking system, so that the phenolic hydroxyl group is prevented from reacting with the photoresist layer on the crosslinking systemThe raw materials are mixed with each other. The general formula of the modified group after modification and transformation is-O-R 1 Wherein R is 1 Is a chromophore, an acid labile group, an acidic group, or a non-functional group. The chromophore is preferably represented by the structure of formula (1), wherein R 2 Is- (CH) 2 ) n1 -O-or- (CH) 2 ) n2 -，n 1 Is 1-6 (such as 1, 2, 3, 4, 5, 6), n 2 Is 0 to 6 (e.g., 0, 1, 2, 3, 4, 5, 6); r is 3 Is- (CH) 2 ) n3 -O-、-O-(CH 2 ) n4 -or- (CH) 2 ) n5 -，n 3 And n 4 Each independently 1 to 6 (e.g. 1, 2, 3, 4, 5, 6), n 5 Is 0 to 6 (e.g., 0, 1, 2, 3, 4, 5, 6); r 4 Is optionally substituted C 6 ～C 20 Aryl, preferably phenyl, naphthyl or anthracenyl. When R is 1 In the case of chromophore groups, the coating can be made antireflective. The acid labile group can be specifically represented by the structures represented by formulas (2) to (4). When R is 1 In the case of acid labile groups, decomposition reactions can occur under acid-catalyzed conditions, increasing the solubility of the compounds in the developer. The acidic group may specifically be a carboxyl group, a phenolic hydroxyl group or a fluorinated alcohol group. When R is 1 In the case of an acidic group, the acidic group can undergo a crosslinking reaction with the vinyl ether crosslinking agent. The non-functional group is preferably C 1 ～C 10 Alkyl or C of 3 ～C 10 More preferably C 1 ～C 5 Alkyl or C 3 ～C 6 A cycloalkyl group of (a). Since the rigid cage compound has too many phenolic hydroxyl groups in its structure, the solubility is low, so that when R is too much 1 When the functional group is a non-functional group, the solubility can be improved.
Figure BDA0003492836140000061
In a preferred embodiment, the chromophore-containing modifying group is present in an amount of 0 to 50%, preferably 0 to 30%, based on the total content of the modifying groups; 0 to 40 percent of modified hydroxyl containing acid labile group, preferably 0 to 25 percent; 0 to 20 percent of modified hydroxyl containing acidic groups, preferably 0 to 15 percent; the non-functional group-containing modifying hydroxyl group is contained in an amount of 0 to 40%, preferably 20 to 35%.
The modified rigid organic cage compound can be obtained by reacting the rigid organic cage compound with a modification group source so as to modify and convert part of phenolic hydroxyl groups on the rigid organic cage compound into modification groups. Wherein the source of the modifying group may specifically be at least one selected from the group consisting of a compound capable of providing a chromophore, a compound capable of providing an acid labile group, a compound capable of providing an acidic group and a compound capable of providing a non-functional group. In addition, the reaction mode and reaction conditions may be determined according to the specific kind of the source of the modifying group, and are specifically known to those skilled in the art, and are not described herein again.
The vinyl ether compound functions as a crosslinking agent, and has two or more vinyl ether terminal groups, preferably 2 to 6 vinyl ether terminal groups, and may be, for example, bifunctional, trifunctional, or tetrafunctional. In a preferred embodiment, the vinyl ether compound has the formula R 5 -(R 6 -O-CH＝CH 2 ) n6 Wherein R is 5 Is a single bond, O, C 1 ～C 5 Alkylene radical, C 1 ～C 18 Alkyleneoxy group, C 6-20 Aryl radical, C 1-18 Alkyl or C 3-18 A cycloalkyl group; each R 6 Each independently is a single bond, C 1-18 Alkylene radical, C 1-18 One of alkyleneoxy, carbonyl, and combinations of at least two of the foregoing; n6 is not less than 2, preferably 2 to 6. The vinyl ether compound is particularly preferably selected from structures represented by formulas (5) to (9):
Figure BDA0003492836140000071
according to the present invention, the antireflective coating composition may further contain at least one photoacid generator (PAG) to effect catalysis of the decrosslinking reaction and acid labile group decomposition reaction. The photoacid generator comprises an ionic or non-ionic type, provided that it is sensitive to radiation at 193nm and/or 248nm and/or 365nm, preferably at least one selected from onium salts, oxime-sulfonates, triazines, succinimidyl-based sulfonates, naphthalimido-based sulfonates, particularly preferably camphorsulfonate and/or N-hydroxynaphthalimide triflate. Wherein the onium salt may be, for example, triphenylsulfonium perfluorosulfonate, such as at least one of TPS nonafluorobutanesulfonate, TPS triflate, TPS tosylate and substituted forms thereof. Furthermore, the bottom antireflective coating composition may also be free of PAG and instead rely on acid diffusion from another layer (e.g., photoresist layer) after exposure. Both of the above approaches can achieve different dissolution rates of the exposed and unexposed portions of the antireflective coating, allowing the exposed portions to be selectively removed while not removing the unexposed portions.
According to the present invention, the antireflective coating composition may further contain a quencher, in which case the resolution of the exposed and unexposed portions of the antireflective coating layer can be increased. The quenching agent is generally a compound containing an amino group, and specifically can be triethanolamine and/or trioctylamine.
According to the present invention, the antireflective coating composition may further contain a surfactant and/or other additives. Specific examples of the surfactant include, but are not limited to: examples of the polyoxyethylene sorbitan fatty acid ester include at least one member selected from the group consisting of polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether and polyoxyethylene oleyl ether, polyoxyethylene alkylaryl ethers such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether, sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monoleate, sorbitan monooleate and sorbitan tristearate, and polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene-sorbitan monolaurate, polyoxyethylene-sorbitan monopalmitate, polyoxyethylene-sorbitan monostearate, polyoxyethylene-sorbitan monooleate and polyoxyethylene-sorbitan tristearate, and specifically, FC171 and FC431 commercially available from 3M company are exemplified. The other additives may be selected from, for example, at least one of leveling agents, buffering agents, diffusion promoters, and the like.
The bottom anti-reflective coating composition is generally used in the form of an organic solution, and is suitable for coating on a substrate by spin coating or the like. Wherein the organic solvent is preferably at least one selected from the group consisting of esters, glycol ethers, and organic solvents having both ethers and alcohols. Specific examples of the ester include, but are not limited to: at least one of oxoisobutyrate (methyl 2-hydroxyisobutyrate and/or ethyl lactate), methyl 2-hydroxyisobutyrate, methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether acetate, dipropylene glycol monomethyl ether acetate, propylene carbonate, and γ -butyrolactone. Specific examples of the glycol ether include, but are not limited to: at least one of 2-methoxy ethyl ether (dicosanol dimethyl ether), ethylene glycol monomethyl ether and propylene glycol monomethyl ether. Specific examples of such organic solvents having both ether and hydroxyl moieties include, but are not limited to: at least one of methoxybutanol, ethoxybutanol, methoxylactone, and ethoxylactone.
The preparation method of the bottom anti-reflective coating composition provided by the invention comprises uniformly mixing the modified rigid organic cage compound, the vinyl ether compound, the organic solvent and the optional photoacid generator, the quencher, the surfactant and other additives. The method of uniformly mixing is not particularly limited, and specifically, the modified rigid organic cage compound and the vinyl ether compound are respectively dissolved in an organic solvent, and then the two solutions are uniformly mixed at normal temperature or low temperature, and then the photoacid generator, the quencher, the surfactant and other additives are optionally added and uniformly stirred.
The bottom antireflective coating composition provided by the present invention is neither soluble in organic solvents nor in the photoresist alkaline developer after thermal crosslinking, but can be de-crosslinked (acid labile groups are decomposed) after exposure in the presence of an acid, making it removable by the alkaline developer. In some aspects, the polymerized (crosslinked) antireflective coating composition is exposed to radiation and then decrosslinked after a baking (PEB) process. I.e. the bottom antireflective coating composition is photosensitive. In other aspects, the bottom antireflective coating composition is not inherently photosensitive, but instead relies on an acid contained in the composition or that diffuses from another layer (e.g., photoresist) during exposure to decrosslink the polymer. In either case, this causes the antireflective coating to form exposed portions and non-exposed portions that have different dissolution rates in an alkaline developer such that the exposed portions can be removed while the non-exposed portions are not. Thus, the bottom antireflective coating composition provided by the present invention is wet developable.
As described above, the bottom antireflective coating composition is particularly useful for developer soluble bottom antireflective coatings in microelectronic fabrication. In particular, the bottom antireflective coating composition can be applied to a microelectronic substrate or over the uppermost layer of one or more optional intermediate bottom layers formed on the substrate surface to form a bottom antireflective coating. The microelectronic substrate comprises the following materials: silicon, siGe, siO 2 、Si 3 N 4 Aluminum, tungsten silicide, gallium arsenide, germanium, tantalum nitride, coral, black diamond, phosphorus or boron doped glass, titanium nitride, and mixtures thereof. Suitable intermediate substrates include the following materials: a carbon-rich layer (e.g., a spun-on carbon layer (SOC) or an amorphous carbon layer), a planarization layer, a silicon hardmask layer, a gap-fill layer, and combinations thereof.
The application process may be carried out by techniques known in the art, such as dip coating, spin coating, spray coating, etc., and may be, for example, spin coating at a speed of about 750 to 5000rpm (preferably about 750 to 4000rpm, more preferably about 1000 to 3500 rpm) for a duration of about 20 to 90 seconds (preferably about 30 to 60 seconds).
According to the present invention, it is necessary to heat the composition after formation of the desired coating to complete crosslinking to form the cured antireflective coating. The heating temperature range is preferably 100-230 ℃, and more preferably 130-200 ℃; the heating time is preferably 45 to 100 seconds, and more preferably 50 to 90 seconds. The thickness of the antireflective coating after curing is preferably 20 to 120nm, more preferably 30 to 80nm. After curing, the antireflective coating is insoluble in alkaline developing solutions as well as in photoresist solutions.
The photosensitive composition can then be applied to the bottom antireflective coating of the present invention followed by a post-application bake (PAB) to form the imaging layer. The imaging layer is typically about 50nm to 160nm thick. As described in more detail below, when the antireflective coating composition is not inherently photosensitive (i.e., PAG-free) the suitable photosensitive composition will preferably contain PAG and generate sufficient acid for de-crosslinking and removing the protecting groups of the acid labile groups so that it becomes soluble in the developer.
According to the present invention, the imaging layer may be patterned by exposing the photoresist and the BARC layer to light of an appropriate wavelength (193 nm to 365 nm) through a reticle, followed by a post-exposure bake (PEB) and development of the pattern. Suitable developers are organic or inorganic alkaline solutions, such as potassium hydroxide (KOH), TMAH, and the like, preferably aqueous solutions containing TMAH at a concentration equal to or less than 0.26N. Wherein, the conditions of the PEB generally comprise that the temperature range can be 60-200 ℃, and preferably 80-140 ℃; the time range may be 30 to 180 seconds, preferably 50 to 90 seconds.
According to the invention, through the steps, the openings including the contact hole, the through hole, the groove and the like can be formed in the photoresist and the anti-reflection layer. The exposed portions of the substrate or intermediate layer may then undergo further processing, or the pattern may be transferred down into the substrate surface.
The forming method of the microelectronic structure provided by the invention comprises the following steps: s1, providing a substrate or providing a modified substrate with an intermediate layer arranged on the surface; s2, forming a bottom anti-reflection coating on the surface of the substrate or the surface of the middle layer of the modified substrate by adopting the bottom anti-reflection coating composition, then forming a photoresist layer on the bottom anti-reflection coating, exposing the surface of the photoresist layer according to a pattern required to be formed, baking and soaking in an alkaline developing solution; the photoresist layer and/or the bottom antireflective coating layer contain a photoacid generator. When the photoresist layer is exposed, the radiation can penetrate through the photoresist layer to reach the bottom anti-reflection coating, so that the bottom anti-reflection coating is exposed.
The bottom antireflective coating composition provided by the present invention is insoluble in organic solvents and photoresist developers after being cured and crosslinked at high temperatures. The cured (i.e., crosslinked) bottom antireflective coating composition can be de-crosslinked when exposed (193-365 nm) and then post-exposure baked. The bottom antireflective coating composition may be inherently photosensitive or rely on acid diffusion from another layer (e.g., photoresist). In either case, this allows the exposed and unexposed portions of the bottom antireflective coating composition to have different dissolution rates in the developer, allowing the exposed portions to be selectively removed while not removing the unexposed portions.
The present invention will be described in detail below by way of examples.
The present invention will be described in more detail with reference to examples and comparative examples. However, these examples are merely illustrative, and the present invention is not limited thereto.
Preparation example 1 this preparation is intended to illustrate the synthesis of organic rigid cage compounds
Dissolving 11.1g (0.1 mol) of resorcinol and 2.0g of glutaraldehyde (0.02 mol) in a three-necked flask containing 300mL of ethanol, adding 12mL of concentrated hydrochloric acid after full dissolution, and then reacting for 48h at 80 ℃, wherein magnetic stirring is kept during the reaction and nitrogen is introduced for protection. After the reaction, the reaction solution was poured into 2L of methanol to precipitate a white solid, and the product was collected by vacuum filtration and washed with a large amount of ether, and dried under vacuum to obtain an organic rigid cage compound with a yield of 63%. The organic rigid cage-shaped compound contains 24 phenolic hydroxyl groups, the side surface of a molecule contains 6 holes, the organic rigid cage-shaped compound has a hydrophobic hollow structure, and the whole molecule is in a cage-shaped structure.
Preparation example 2 this preparation is intended to illustrate the synthesis of organic rigid cage compounds
Dissolving 13.2g (0.12 mol) of resorcinol and 2.0g of glutaraldehyde (0.02 mol) in a three-necked flask containing 300mL of isopropanol, adding 12mL of trifluoroacetic acid after fully dissolving, and then reacting for 60h at 70 ℃, wherein magnetic stirring is kept during the reaction and nitrogen is introduced for protection. After the reaction, the reaction solution was poured into 2L of methanol to precipitate a white solid, and the product was collected by vacuum filtration and washed with a large amount of ether, and dried under vacuum to obtain an organic rigid cage compound with a yield of 63%. The organic rigid cage-shaped compound contains 24 phenolic hydroxyl groups, the side surface of a molecule contains 6 holes, the organic rigid cage-shaped compound has a hydrophobic hollow structure, and the whole molecule is in a cage-shaped structure.
Preparation 3 this preparation is illustrative of the synthesis of organic rigid cage compounds
Dissolving 8.8g (0.08 mol) of resorcinol and 2.0g of glutaraldehyde (0.02 mol) in a three-necked flask containing 300mL of butanol, adding 12mL of p-toluenesulfonic acid after full dissolution, then reacting at 75 ℃ for 40h, keeping magnetic stirring during the reaction, and introducing nitrogen for protection. After the reaction, the reaction solution was poured into 2L of methanol to precipitate a white solid, and the product was collected by vacuum filtration, washed with a large amount of ether, and dried under vacuum to give an organic rigid cage-like compound with a yield of 63%. The organic rigid cage-shaped compound contains 24 phenolic hydroxyl groups, the side surface of a molecule contains 6 holes, the organic rigid cage-shaped compound has a hydrophobic hollow structure, and the whole molecule is in a cage-shaped structure.
Examples 1 to 4 illustrate the preparation of modified rigid cage compounds provided by the present invention
EXAMPLE 1 conversion of the phenolic hydroxyl moiety in rigid cage Compounds to naphthalene-containing groups (chromophores)
A500 mL three-necked flask (with nitrogen inlet) was equipped with a magnetic stir bar, dropping funnel, condenser (with nitrogen outlet), and thermometer. At 50 ℃, dissolving 17.1g of the organic rigid cage compound obtained in preparation example 1, 35mL of triethylamine and 49g of 2- (2-naphthyl) acetyl chloride in 200mL of N, N-dimethylformamide, continuously reacting for 4h, after the reaction is finished, cooling the system temperature to room temperature, then pouring the reaction solution into a mixed solvent obtained by compounding water and ethanol according to a mass ratio of 3.
EXAMPLE 2 conversion of the phenolic hydroxyl moiety in a rigid cage Compound to t-butyloxycarbonyl (acid labile group)
A500 mL three-necked flask (with nitrogen inlet) was equipped with a magnetic stir bar, dropping funnel, condenser (with nitrogen outlet), and thermometer. Dissolving 17.1g of the organic rigid cage compound obtained in preparation example 2 and 35mL of triethylamine in 200mL of N, N-dimethylformamide at 50 ℃, dropwise adding 52.3g of di-tert-butyl dicarbonate into the obtained solution through a dropping funnel, continuing the titration process for 2h, continuing the reaction for 1h after the titration is finished, cooling the system temperature to room temperature, then pouring the reaction solution into a mixed solvent obtained by compounding water and ethanol according to a mass ratio of 3, precipitating a light yellow precipitate, filtering, and drying the obtained solid in vacuum at 80 ℃ to obtain a modified rigid cage compound (marked as GH-2), wherein the phenolic hydroxyl group in the end group is 39% and the modification is 61% of tert-butyloxycarbonyl group.
Example 3 conversion of the phenolic hydroxyl moiety in the rigid cage Compound to a methoxy group (non-functional group)
A500 mL three-necked flask (with nitrogen inlet) was equipped with a magnetic stir bar, dropping funnel, condenser (with nitrogen outlet), and thermometer. At 50 ℃, 17.1g of the organic rigid cage compound obtained in preparation example 3 is dissolved in 200mL of N, N-dimethylformamide, 21.7g of dimethyl carbonate is dripped into the obtained solution through a dropping funnel, the titration process lasts for 2h, the reaction continues for 1h after the titration is finished, the temperature of the system is reduced to room temperature, then the reaction solution is poured into a mixed solvent obtained by compounding water and ethanol according to the mass ratio of 3.
EXAMPLE 4 conversion of the phenolic hydroxyl moiety in the rigid cage Compound to a methoxy group (non-functional group)
A500 mL three-necked flask (with nitrogen inlet) was equipped with a magnetic stir bar, dropping funnel, condenser (with nitrogen outlet), and thermometer. At 50 ℃, 17.1g of the organic rigid cage-shaped compound obtained in preparation example 1 is dissolved in 200mL of N, N-dimethylformamide, 12.1g of dimethyl carbonate is dripped into the solution obtained by a dropping funnel, the titration process lasts for 2h, the reaction is continued for 1h after the titration is finished, the temperature of the system is reduced to room temperature, then the reaction solution is poured into a mixed solvent obtained by compounding water and ethanol according to the mass ratio of 3.
Examples 5 to 8 are provided to illustrate the preparation of the bottom anti-reflective coating composition provided by the present invention
Example 5
1.91g of the modified rigid cage compound GH-4 obtained in example 4, 0.017g of pyridinium p-toluenesulfonate, 0.27g of tris (2-vinyl ether) phenyl-mesityl ester (the structure is represented by the formula (7)), 0.0023g of triethanolamine, 0.02g of surfactant FC171 and 97.8g of PGME were uniformly mixed in an amber bottle, and then the resulting mixture was shaken overnight, and then filtered through a 0.2 μm end point filter to remove particles and insoluble matter, and then charged into a clean amber bottle to obtain a photosensitive bottom anti-reflective coating composition.
The photosensitive bottom anti-reflective coating composition was spin coated onto a silicon wafer at 1500rpm and then baked at 160 ℃ for 60 seconds to give a bottom anti-reflective coating-silicon wafer sample. The bottom antireflective coating-silicon wafer sample was then rinsed with ethyl lactate to test the solvent resistance of the film (peel test) and then immersed into developer tetramethylammonium hydroxide at a concentration of 0.26N without exposure to evaluate dark loss. An exposure contrast experiment was performed on another bottom antireflective coating-silicon wafer sample using a 248nm KrF wafer stepper. After exposure, a PEB was carried out at 120 ℃ for 90 seconds, and the silicon wafer was developed for 60 seconds using the above-mentioned developer, then rinsed for 5 seconds with deionized water, and spin-dried at a rotation speed of 3000 rpm.
In this example, the solvent stripping test involves baking the photosensitive bottom antireflective coating composition to cure and then measuring the thickness of the cured layer (averaged over the measurements at five different locations) using an ellipsometer, which is the average initial film thickness. Next, ethyl lactate was spun onto the cured film for about 20 seconds, and then spin-dried at about 3000rpm for about 30 seconds to remove the solvent. The thickness was again measured at five different locations on the wafer with the ellipsometer and the average of these measurements was calculated. This is the average final film thickness. The amount of peeling is the difference between the initial average film thickness and the final average film thickness. The results are shown in Table 1.
Percent peeling (%) = peeled amount/average initial film thickness × 100%
The percent spallation of the coating of this example when subjected to the spallation test is less than about 5%, preferably less than about 1%, and even more preferably about 0%.
In this example, the solubility of the bottom antireflective coating of the present invention in an alkaline developer was evaluated using the same procedure and calculation method as described above for the exfoliation test, but the crosslinked layer was also subjected to PEB at 110 ℃ for 60 seconds using an alkaline developer instead of the photoresist solvent. Then, 0.26N TMAH developer was spun onto the bottom antireflective coating for 60 seconds, then rinsed with deionized water for 5 seconds, and then rotated at approximately 3000rpm to remove the developer. Any thickness loss in the cured layer is defined as "dark loss". The dark loss of the cured layer will be less than about 5%, preferably less than about 1.5%, more preferably less than about 1%, and most preferably about 0%. The results are shown in Table 1.
In this embodiment, wet development of the film can also be evaluated using similar procedures and calculations similar to those used for peel testing. First, a KrF wafer stepper was used at 20 mJ/cm 2 Is exposed to light of the cured layer. The exposed layer was then subjected to PEB at 120 ℃ for 90 seconds. An alkaline developer (0.26N TMAH) was then spun onto the layer for 60 seconds, followed by a 5 second rinse with deionized water while spinning at 300rpm, then at about 3000rpm to remove the developer and again calculate the thickness of the film layer. The development of the photosensitive, developer-soluble antireflective coating is preferably from about 95% to about 100%, more preferably from about 99% to about 100%. The results are shown in Table 1.
TABLE 1
Item Peel test Dark loss test Exposure development test
Initial thickness (nm) 36.7 37.4 38.2
Thickness after treatment (nm) 36.1 37.0 0
Percent Peel (%) 1.4 1.1 100
The results in table 1 show that the present invention provides a bottom anti-reflective coating that has good solvent stripping resistance and little dark loss while still being completely removable in an alkaline developer after exposure.
Example 6
0.81g of the modified rigid cage compound GH-1 obtained in example 1 and 1.14g of the modified rigid cage compound GH-3 obtained in example 3, 0.019g of pyridinium p-toluenesulfonate, 0.34g of 1, 4-cyclohexanedimethanol divinyl ether (having the structure represented by the formula (8)), 0.0020g of triethanolamine, 0.02g of the surfactant FC171 and 97.3g of PGME were mixed uniformly in an amber bottle, and then the resulting mixture was shaken overnight, and then filtered through a 0.2 μm end point filter to remove particles and insoluble matter, followed by charging into a clean amber bottle, to obtain a photosensitive bottom anti-reflective coating composition. The photosensitive bottom anti-reflective coating composition was subjected to a peeling test, a dark loss test and an exposure development test according to the method of example 1, and the results are shown in table 2.
TABLE 2
Item Peel test Dark loss test Exposure development test
Initial thickness (nm) 45.5 47.1 46.9
Thickness after treatment (nm) 44.6 46.7 0
Percent Peel (%) 2.0 0.9 100
The results in table 2 show that the present invention provides a bottom anti-reflective coating that has good solvent stripping resistance and little dark loss while still being completely removable in an alkaline developer after exposure.
Example 7
1.6g of modified rigid cage GH-1 obtained in example 1 and 1.75g of modified rigid cage GH-2 obtained in example 2, 0.026g of pyridinium p-toluenesulfonate, 0.43g of 1, 4-cyclohexanedimethanol divinyl ether (having the structure represented by formula (8)), 0.0026g of triethanolamine, 0.02g of surfactant FC171 and 96.2g of PGME were mixed uniformly in an amber bottle, and the resulting mixture was shaken overnight, filtered through a 0.2 μm end-point filter to remove particles and insoluble matter, and then charged into a clean amber bottle to obtain a photosensitive bottom anti-reflective coating composition. The photosensitive bottom anti-reflective coating composition was subjected to a peeling test, a dark loss test and an exposure development test according to the method of example 1, and the results are shown in table 3.
TABLE 3
Item Peel test Dark loss test Exposure development test
Initial thickness (nm) 56.5 56.9 55.9
Thickness after treatment (nm) 55.6 56.1 0
Percent Peel (%) 1.6 1.4 100
The results in table 3 show that the bottom anti-reflective coatings provided by the present invention have good solvent stripping resistance and little dark loss, while still being completely removable in alkaline developer after exposure.
Example 8
1.1g of the modified rigid cage compound GH-1 obtained in example 1, 1g of the modified rigid cage compound GH-2 obtained in example 2, and 1.35g of the modified rigid cage compound GH-3 obtained in example 3, 0.023g of pyridinium p-toluenesulfonate, 0.37g of 1, 4-cyclohexanedimethanol divinyl ether (having the structure represented by the formula (8)), 0.0020g of triethanolamine, 0.02g of the surfactant FC171, and 96.1g of PGME were uniformly mixed in an amber bottle, and then the resulting mixture was shaken overnight, and then filtered through a 0.2 μm end point filter to remove particles and insoluble matter, and then charged into a clean amber bottle to obtain a photosensitive undercoat antireflection coating composition. The photosensitive bottom anti-reflective coating composition was subjected to a peeling test, a dark loss test and an exposure development test according to the method of example 1, and the results are shown in table 4.
TABLE 4
Item Peel test Dark loss test Exposure development test
Initial thickness (nm) 58.5 58.9 57.9
Thickness after treatment (nm) 57.8 58.1 0
Percent Peel (%) 1.2 1.4 100
The results in table 4 show that the invention provides bottom anti-reflective coatings that have good solvent stripping resistance and little dark loss while still being completely removable in alkaline developer after exposure.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made in the above embodiments by those of ordinary skill in the art without departing from the principle and spirit of the present invention.

Claims (14)

1. A bottom anti-reflective coating composition comprising a modified rigid organic cage compound and a vinyl ether compound to form a bottom anti-reflective coating compositionAnd the modified rigid organic caged compound is a compound obtained by modifying and converting partial phenolic hydroxyl in the rigid organic caged compound into a modifying group, and the general formula of the modifying group is-O-R 1 ，R 1 Is a chromophore, an acid labile group, an acidic group, or a non-functional group; the rigid organic cage-shaped compound is a compound which is prepared from glutaraldehyde and resorcinol by a dynamic covalent chemical method, contains 24 phenolic hydroxyl groups, has 6 holes on the side surface of a molecule, has a hydrophobic hollow structure and has a cage-shaped structure in the whole molecule; the vinyl ether compound has more than two vinyl ether end groups;
the bottom antireflective coating composition further comprises at least one of a photoacid generator, a quencher, a surfactant, and other additives;
based on the total weight of the bottom anti-reflection coating composition being 100wt%, the content of the modified rigid organic cage-shaped compound is 0.2-10 wt%, the content of the vinyl ether compound is 0.1-10 wt%, the content of the photoacid generator is 0.005-0.1 wt%, the content of the quencher is 0.001-0.05 wt%, the content of the surfactant is 0.01-0.5 wt%, the content of the other additives is 0-1 wt%, the content of the organic solvent is 90-99 wt%, and the total content of the components is 100%.
2. The bottom antireflective coating composition as claimed in claim 1, wherein the rigid organoccaged compound is prepared by the following process: in the presence of non-oxidation acid and under the protection of inert gas, carrying out condensation reaction on resorcinol and glutaraldehyde for 40-60 h in an alcohol solvent according to the molar ratio (4-6): 1 at 70-80 ℃, after the reaction is finished, carrying out alcohol precipitation crystallization on the obtained condensation reaction solution, filtering, washing the obtained solid product with ether, and drying to obtain the rigid organic cage-shaped compound.
3. The bottom antireflective coating composition as claimed in claim 2, wherein the non-oxidized acid is selected from at least one of concentrated hydrochloric acid, p-toluenesulfonic acid and trifluoroacetic acid.
4. The bottom antireflective coating composition as claimed in claim 2, wherein the alcoholic solvent is selected from at least one of ethanol, isopropanol and butanol.
5. The bottom antireflective coating composition as claimed in claim 2, wherein the solvent used for the alcohol precipitation crystallization is methanol.
6. The bottom antireflective coating composition of claim 2 wherein the ether is diethyl ether.
7. The bottom antireflective coating composition of claim 1, wherein the modified rigid organoccaged compound is a compound resulting from the conversion of 2 to 22 phenolic hydroxyl group modifications in the rigid organoccaged compound into modifying groups.
8. The bottom antireflective coating composition as claimed in any one of claims 1 to 7, wherein the chromophore is represented by the structure represented by formula (1); the acid labile group is represented by the structures represented by formulas (2) to (4); the acid group is carboxyl, phenolic hydroxyl or fluorinated alcohol group; the non-functional group is C 1 ～C 10 Alkyl or C 3 ～C 10 Cycloalkyl groups of (a);
Figure FDA0003893892830000021
R 2 is- (CH) 2 ) n1 -O-or- (CH) 2 ) n2 -，n 1 Is 1 to 6,n 2 Is 0 to 6; r 3 Is- (CH) 2 ) n3 -O-、-O-(CH 2 ) n4 -or- (CH) 2 ) n5 -，n 3 And n 4 Each independently of the other is 1 to 6,n 5 Is 0 to 6; r is 4 Is optionally subjected to warp extractionGeneration C 6 ～C 20 And (4) an aryl group.
9. The bottom antireflective coating composition of claim 8 wherein the chromophore containing modifying group comprises 0 to 50% chromophore containing modifying group, the acid labile group containing modifying hydroxyl group comprises 0 to 40%, the acid group containing modifying hydroxyl group comprises 0 to 20%, and the non-functional group containing modifying hydroxyl group comprises 0 to 40% based on the total amount of the modifying groups.
10. The bottom antireflective coating composition according to any one of claims 1 to 7, wherein the mass ratio of the modified rigid organic cage compound to the vinyl ether-based compound is (0.1 to 25): 1.
11. The bottom anti-reflective coating composition as claimed in any one of claims 1 to 7, wherein the vinyl ether compound has the formula R 5 -(R 6 -O-CH＝CH 2 ) n6 Wherein R is 5 Is a single bond, O, C 1 ～C 5 Alkylene radical, C 1 ～C 5 Alkyleneoxy group, C 6-20 Aryl radical, C 1-18 Alkyl or C 3-18 Cycloalkyl radical, each R 6 Each independently is a single bond, C 1-18 Alkylene radical, C 1-18 Alkylene oxide, carbonyl and one of the combination of at least two of the above groups, wherein n6 is more than or equal to 2.
12. The bottom antireflective coating composition as claimed in claim 11, wherein the vinyl ether-based compound is selected from structures represented by formulas (5) to (9):
Figure FDA0003893892830000022
13. the method for preparing a bottom anti-reflective coating composition as claimed in any one of claims 1 to 12, which comprises mixing the modified rigid organic cage compound, the vinyl ether-based compound and the organic solvent, and optionally the photoacid generator, the quencher, the surfactant and other additives uniformly.
14. A method of forming a microelectronic structure, the method comprising:
s1, providing a substrate or providing a modified substrate with an intermediate layer arranged on the surface;
s2, forming a bottom anti-reflection coating on the surface of the substrate or the surface of the middle layer of the modified substrate by using the bottom anti-reflection coating composition as claimed in any one of claims 1 to 13, forming a photoresist layer on the bottom anti-reflection coating, exposing the surface of the photoresist layer according to a pattern required to be formed, baking, and soaking in an alkaline developing solution; the photoresist layer and/or the bottom antireflective coating layer contain a photoacid generator.
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