CN114514609A - 成像装置和电子设备 - Google Patents

成像装置和电子设备 Download PDF

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Publication number
CN114514609A
CN114514609A CN202080066020.2A CN202080066020A CN114514609A CN 114514609 A CN114514609 A CN 114514609A CN 202080066020 A CN202080066020 A CN 202080066020A CN 114514609 A CN114514609 A CN 114514609A
Authority
CN
China
Prior art keywords
lens
glass substrate
solid
state imaging
imaging element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202080066020.2A
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English (en)
Chinese (zh)
Inventor
吉冈浩孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN114514609A publication Critical patent/CN114514609A/zh
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/001—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras
    • G02B13/0085—Miniaturised objectives for electronic devices, e.g. portable telephones, webcams, PDAs, small digital cameras employing wafer level optics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0018—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means for preventing ghost images
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/02—Simple or compound lenses with non-spherical faces
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/021—Mountings, adjusting means, or light-tight connections, for optical elements for lenses for more than one lens
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202080066020.2A 2019-11-13 2020-10-30 成像装置和电子设备 Withdrawn CN114514609A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019205538 2019-11-13
JP2019-205538 2019-11-13
PCT/JP2020/040797 WO2021095562A1 (ja) 2019-11-13 2020-10-30 撮像装置および電子機器

Publications (1)

Publication Number Publication Date
CN114514609A true CN114514609A (zh) 2022-05-17

Family

ID=75912053

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080066020.2A Withdrawn CN114514609A (zh) 2019-11-13 2020-10-30 成像装置和电子设备

Country Status (5)

Country Link
US (1) US12107103B2 (https=)
EP (1) EP4060739B1 (https=)
JP (1) JPWO2021095562A1 (https=)
CN (1) CN114514609A (https=)
WO (1) WO2021095562A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021210445A1 (ja) * 2020-04-15 2021-10-21 パナソニックＩｐマネジメント株式会社 撮像装置
KR20240092346A (ko) * 2022-12-14 2024-06-24 삼성전기주식회사 렌즈 및 이를 포함하는 렌즈 조립체

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1197659A (ja) * 1997-09-22 1999-04-09 Casio Comput Co Ltd 撮像素子ユニット
JP2005234038A (ja) * 2004-02-17 2005-09-02 Seiko Epson Corp 誘電体多層膜フィルタ及びその製造方法並びに固体撮像デバイス
JP4153016B1 (ja) * 2007-03-30 2008-09-17 シャープ株式会社 固体撮像装置、固体撮像装置の製造方法およびその固体撮像装置を用いた撮影装置
JP2009123788A (ja) * 2007-11-12 2009-06-04 Sharp Corp 固体撮像装置、固体撮像装置の製造方法、及びその固体撮像装置を備えた撮影装置
JP2012043866A (ja) * 2010-08-16 2012-03-01 Fujikura Ltd 半導体パッケージ及びその製造方法
WO2012051751A1 (en) * 2010-10-19 2012-04-26 Ether Precision, Inc. Optical module comprising monochromatic image sensors, system comprising optical module and method of manufacturing optical module
GB2484679B (en) 2010-10-19 2012-12-19 Luminectric Ltd Cases for portable electronic devices
JP6163398B2 (ja) 2013-09-18 2017-07-12 ソニーセミコンダクタソリューションズ株式会社 撮像素子、製造装置、製造方法
JP6976751B2 (ja) * 2017-07-06 2021-12-08 ソニーセミコンダクタソリューションズ株式会社 撮像装置および撮像装置の製造方法、並びに、電子機器
JP7146376B2 (ja) 2017-08-31 2022-10-04 ソニーセミコンダクタソリューションズ株式会社 撮像装置、および電子機器
JP2019066422A (ja) * 2017-10-04 2019-04-25 ソニーセミコンダクタソリューションズ株式会社 検査装置、および検査方法、並びに、プログラム
JP7379163B2 (ja) * 2017-12-28 2023-11-14 ソニーセミコンダクタソリューションズ株式会社 カメラパッケージ、カメラパッケージの製造方法、および、電子機器
JP2019213151A (ja) * 2018-06-08 2019-12-12 ソニーセミコンダクタソリューションズ株式会社 撮像装置

Also Published As

Publication number Publication date
EP4060739A1 (en) 2022-09-21
JPWO2021095562A1 (https=) 2021-05-20
WO2021095562A1 (ja) 2021-05-20
US12107103B2 (en) 2024-10-01
US20220392937A1 (en) 2022-12-08
EP4060739A4 (en) 2023-02-08
EP4060739B1 (en) 2025-09-03

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