CN114501783A - High-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board and preparation method thereof - Google Patents

High-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board and preparation method thereof Download PDF

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Publication number
CN114501783A
CN114501783A CN202210157698.2A CN202210157698A CN114501783A CN 114501783 A CN114501783 A CN 114501783A CN 202210157698 A CN202210157698 A CN 202210157698A CN 114501783 A CN114501783 A CN 114501783A
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diamond
layer
circuit
insulating
diamond film
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于盛旺
黑鸿君
吴艳霞
高洁
周兵
郑可
公彦鹏
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Taiyuan University of Technology
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Taiyuan University of Technology
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks

Abstract

The invention relates to a high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board and a preparation method thereof, belonging to the technical field of artificially synthesized diamond circuits. The circuit board consists of single-layer or multi-layer high-purity insulating diamond film and high-B-doped conductive diamond circuit, and the preparation method comprises the steps of firstly preparing the high-purity insulating diamond film on a substrate by using a CVD method, then depositing the high-B-doped conductive diamond circuit on the high-purity insulating diamond film by using a mask method, and removing the substrate and the mask plate after the deposition is finished to obtain the circuit board consisting of the insulating diamond film and the conductive diamond circuit. The substrate layer and the circuit of the circuit board are both diamond structures, have no difference in performance, have high combination performance, extremely high heat dissipation, wear resistance and corrosion resistance, and are high in controllability of CVD and a mask method and simple and convenient to operate.

Description

High-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board and preparation method thereof
Technical Field
The invention belongs to the technical field of artificially synthesized diamond circuits, and particularly relates to a high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board and a preparation method thereof.
Background
With the continuous improvement of the power of CPU, led, transistor and various electrical components and the gradual complication of the application environment, higher requirements are put forward on the heat dissipation and corrosion resistance of the circuit board. The diamond film prepared by the Chemical Vapor Deposition (CVD) method has the performances very similar to those of natural diamond, such as highest hardness in nature, extremely high wear resistance and thermal conductivity, and extremely high chemical inertness (resistance to any acid-base corrosion at room temperature). High purity diamond films also have excellent insulating properties and are commonly used as substrates for high power circuit boards or heat dissipating insulating layers. The traditional method for preparing the diamond circuit board generally comprises the steps of coating copper on the surface of diamond and then etching a circuit, but waste liquid generated in the etching process of the method causes environmental pollution, and the combination performance between the circuit and a substrate is poor due to performance differences such as the thermal expansion coefficients of the copper and the diamond. In addition, the wear resistance and corrosion resistance of the metal copper are poor, and the metal copper can not be applied to complex working condition environments such as friction or corrosive media.
Chinese patent 200710111584.X discloses a diamond circuit board module structure with high heat dissipation, which takes an insulating and heat-conducting diamond layer as a circuit substrate, and a circuit structure layer is printed or electroplated on the circuit substrate. However, the patent does not solve the problem of bonding the circuit and the diamond circuit substrate layer, and the diamond circuit substrate is made of reinforcing fibers, fine diamond particle powder, insulating inorganic materials, high molecular binders and the like, and the heat dissipation, wear resistance and corrosion resistance of the diamond circuit substrate are far lower than those of a pure diamond structure. Chinese patent 202110138208.X discloses a circuit printing method based on 3D printing and a prepared high power circuit board, and AgCuTi conducting wire is printed on a diamond panel by using 3D printing technology. However, the AgCuTi of the invention has thermal conductivity far inferior to that of diamond, and has low heat dissipation efficiency, poor bonding performance between a circuit and the diamond, poor wear resistance and corrosion resistance of the circuit and the like. Chinese patent 202110011399.3 discloses a method for preparing a diamond circuit board based on laser direct processing, which uses an insulating and heat-conducting diamond as a circuit board substrate, and adopts high-precision laser beam scanning to induce local graphitization on the surface of the diamond to form a graphite wire. However, the invention also has the problem of poor bonding performance of the graphite wire and the diamond, the thermal conductivity of the graphite is far lower than that of the diamond, and the heat dissipation rate of the circuit board is lower. In addition, the laser beam scanning induced diamond surface graphitization degree is greatly influenced by parameters, the process requirement is high, and the operation is complex.
In summary, the current circuit board prepared by using diamond as a substrate material has one or more of the following problems: (1) the contact interface stress is concentrated and the bonding performance is poor due to the performance difference such as the thermal expansion coefficient between the circuit and the diamond substrate; (2) the heat conductivity of the material forming the circuit is low, and the heat dissipation efficiency of the circuit is low; (3) the metal circuit has poor performances such as wear resistance, corrosion resistance and the like, and cannot be applied to complex working condition environments such as friction or corrosive media and the like.
Disclosure of Invention
The invention aims to provide a diamond circuit board with high thermal conductivity, wear resistance and corrosion resistance and a preparation method thereof based on the problems in the prior art and combined with the requirements of high heat dissipation, high wear resistance and corrosion resistance of the current circuit board. The circuit board of the invention respectively uses high-purity insulating diamond and high-B-doped conductive diamond as the substrate and the circuit, and solves the problem of poor bonding performance caused by the performance difference between the circuit and the diamond on the existing diamond circuit board. The high-purity diamond in the circuit board has extremely high resistance and is an excellent insulator, after the diamond is doped with the B element, the characteristics of conductors and even superconductors can be shown, the whole circuit board is of a diamond structure, has extremely high heat conductivity and high circuit heat dissipation efficiency, also has extremely high wear resistance, extremely low friction coefficient and excellent chemical stability, and can be used under the conditions of friction or corrosive media and the like.
The invention is realized by the following technical scheme:
the invention provides a high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board with a single-layer structure and without a substrate, which comprises the following specific steps:
a high-thermal-conductivity, wear-resistant and corrosion-resistant diamond circuit board of a single-layer structure without a substrate comprises a single-layer high-purity insulating diamond film, wherein a high-B-doped conductive diamond circuit is arranged on the top surface of the insulating diamond film; the insulating diamond film is composed of one or more of high-purity single-crystal, micro-crystal, nano-crystal or super-nano-crystal diamonds, and the conductive diamond circuit is composed of one or more of high-B-doped single-crystal, micro-crystal, nano-crystal or super-nano-crystal conductive diamonds.
The preparation method of the diamond circuit board with the high thermal conductivity, wear resistance and corrosion resistance, which does not contain the substrate and has the single-layer structure, comprises the following steps:
1) cleaning a substrate, and depositing a single-layer insulating diamond film by using a CVD method and using hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies;
2) covering a mask plate with a hollowed circuit pattern on the top surface of the single-layer insulating diamond film in the step 1), adding a gas containing B into a precursor composed of hydrogen and a gas containing carbon or hydrogen, argon and a gas containing carbon by using a CVD method, and depositing a single-layer conductive diamond circuit;
3) and removing the mask plate and the substrate to obtain the diamond circuit board with a single-layer structure, high thermal conductivity, wear resistance and corrosion resistance.
The second technical scheme of the invention provides a high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board with a single-layer structure and comprising a substrate, which comprises the following specific steps:
a high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board with a single-layer structure and containing a substrate comprises a single-layer high-purity insulating diamond film, wherein the substrate is arranged on the bottom surface of the insulating diamond film, and a high-B-doped conductive diamond circuit is arranged on the top surface of the insulating diamond film; the insulating diamond film is composed of one or more of high-purity single-crystal, micro-crystal, nano-crystal or super-nano-crystal diamonds, and the conductive diamond circuit is composed of one or more of high-B-doped single-crystal, micro-crystal, nano-crystal or super-nano-crystal conductive diamonds.
The preparation method of the diamond circuit board with the single-layer structure and the high thermal conductivity, the wear resistance and the corrosion resistance comprises the following steps:
1) cleaning a substrate, and depositing a single-layer insulating diamond film by using a CVD method and using hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies;
2) covering a mask plate with a hollowed circuit pattern on the top surface of the single-layer insulating diamond film in the step 1), adding a gas containing B into a precursor composed of hydrogen and a gas containing carbon or hydrogen, argon and a gas containing carbon by using a CVD method, and depositing a single-layer conductive diamond circuit;
3) and removing the mask plate and reserving the substrate to obtain the diamond circuit board with the single-layer structure and high thermal conductivity, wear resistance and corrosion resistance.
The third technical scheme of the invention provides a high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board with a multilayer structure and without a substrate, which comprises the following specific steps:
a high-heat-conductivity, wear-resistant and corrosion-resistant diamond circuit board with a multilayer structure and without a substrate comprises a plurality of layers of high-purity insulating diamond films, wherein a high-B-doped conductive diamond circuit is arranged on the top surface of each layer of insulating diamond film, and the conductive diamond circuits on the other layers of insulating diamond films are embedded in the insulating diamond film on the upper layer except the conductive diamond circuit on the insulating diamond film on the top layer; the insulating diamond film is composed of one or more of high-purity single-crystal, micro-crystal, nano-crystal or super-nano-crystal diamonds, and the conductive diamond circuit is composed of one or more of high-B-doped single-crystal, micro-crystal, nano-crystal or super-nano-crystal conductive diamonds; the number of layers of the insulating diamond film and the conductive diamond circuit is 2-99, the structure and the composition of each layer of insulating diamond film can be the same or different, and the structure and the composition of each layer of conductive diamond circuit can be the same or different.
The preparation method of the diamond circuit board with high thermal conductivity, wear resistance and corrosion resistance of the multilayer structure without the substrate comprises the following steps:
1) cleaning a substrate, and depositing a first layer of insulating diamond film by using a CVD method and hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies;
2) covering a mask plate with a hollowed circuit pattern on the top surface of the first layer of the insulating diamond film in the step 1), adding a gas containing B into a precursor body consisting of hydrogen and a gas containing carbon or hydrogen, argon and a gas containing carbon by using a CVD method, and depositing a first layer of a conductive diamond circuit;
3) removing the mask plate and the substrate to obtain a first layer of insulating diamond film and a conductive diamond circuit;
4) placing a mask plate which can just cover the first layer of conductive diamond circuit on the first layer of insulating diamond film and the conductive diamond circuit in the step 3), depositing the insulating diamond film which just can fill the gap of the first layer of conductive diamond circuit by using hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies by using a CVD method, then removing the mask plate, and continuing to deposit the insulating diamond film to obtain a second layer of insulating diamond film;
5) covering a mask plate with a hollowed circuit pattern on the top surface of the second layer of the insulating diamond film in the step 4), adding a gas containing B into a first body consisting of hydrogen and a gas containing carbon or hydrogen, argon and a gas containing carbon by using a CVD method, and depositing a second layer of the conductive diamond circuit;
6) removing the mask plate to obtain a second layer of insulating diamond film and a conductive diamond circuit;
7) and (4) repeating the steps 4) to 6) repeatedly, and finally obtaining the high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board with the multilayer structure.
The fourth technical scheme of the invention provides a high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board with a multilayer structure comprising a substrate, which comprises the following specific steps:
a high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board with a multilayer structure and comprising substrates comprises a plurality of layers of high-purity insulating diamond films, wherein a high-B-doped conductive diamond circuit is arranged on the top surface of each layer of insulating diamond film, the conductive diamond circuits on the other layers of insulating diamond films are embedded in the insulating diamond film on the upper layer except the conductive diamond circuit on the insulating diamond film on the top layer, and the substrate is arranged on the bottom surface of the insulating diamond film on the bottommost layer; the insulating diamond film is composed of one or more of high-purity single-crystal, micro-crystal, nano-crystal or super-nano-crystal diamonds, and the conductive diamond circuit is composed of one or more of high-B-doped single-crystal, micro-crystal, nano-crystal or super-nano-crystal conductive diamonds; the number of layers of the insulating diamond film and the conductive diamond circuit is 2-99, the structure and the composition of each layer of insulating diamond film can be the same or different, and the structure and the composition of each layer of conductive diamond circuit can be the same or different.
The preparation method of the diamond circuit board with the multilayer structure of the substrate and high thermal conductivity, wear resistance and corrosion resistance comprises the following steps:
1) cleaning a substrate, and depositing a first layer of insulating diamond film by using a CVD method and hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies;
2) covering a mask plate with a hollowed circuit pattern on the top surface of the first layer of the insulating diamond film in the step 1), adding a gas containing B into a precursor body consisting of hydrogen and a gas containing carbon or hydrogen, argon and a gas containing carbon by using a CVD method, and depositing a first layer of a conductive diamond circuit;
3) removing the mask plate and reserving the substrate to obtain a first layer of insulating diamond film and a conductive diamond circuit;
4) placing a mask plate which can just cover the first layer of conductive diamond circuit on the first layer of insulating diamond film and the conductive diamond circuit in the step 3), depositing the insulating diamond film which just can fill the gap of the first layer of conductive diamond circuit by using hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies by using a CVD method, then removing the mask plate, and continuing to deposit the insulating diamond film to obtain a second layer of insulating diamond film;
5) covering a mask plate with a hollowed circuit pattern on the top surface of the second layer of the insulating diamond film in the step 4), adding a gas containing B into a first body consisting of hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas by using a CVD method, and depositing a second layer of conductive diamond circuit;
6) removing the mask plate to obtain a second layer of insulating diamond film and a conductive diamond circuit;
7) and (4) repeating the steps 4) to 6) repeatedly, and finally obtaining the high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board with the multilayer structure.
Furthermore, in the preparation methods of the above various technical solutions, the CVD method includes, but is not limited to, a hot filament CVD method, a direct current arc plasma jet CVD method, a microwave plasma CVD method; c-containing gases include, but are not limited to, CH4、C2H2、C3H8(ii) a B-containing gases include, but are not limited to, gaseous B compounds, gases doped with B-containing volatile liquids, B-containing solids vaporized using high temperatures; the substrate is graphite or a substrate containing one or more of Si, W, Mo, Ta, Ti, Cr, Hf, Nb, Zr, Re, V, Y, Ir, Ga, Ag, Cu elements and O, N, C compounds thereof.
Compared with the prior art, the invention has the beneficial effects that:
1) the circuit board substrate and the circuit prepared by the method are made of the diamond material directly deposited by the CVD method, so that the problem of poor bonding performance caused by the performance difference of heterogeneous materials is solved;
2) the circuit board takes the diamond structure as a main body, and has extremely high heat conductivity coefficient, excellent heat dissipation performance, extremely high strength and hardness, extremely low friction coefficient, excellent wear resistance, excellent chemical stability and corrosion resistance;
3) according to the invention, the mask plate is used for depositing the high-B-doped conductive diamond circuit on the surface of the high-purity insulating diamond film, so that circuits with various patterns can be manufactured according to requirements, and the controllability and the precision are high; the concentration of the gas containing B in the CVD deposition environment can be changed to obtain conductive diamond circuits with different B contents, so that the effective regulation and control of the circuit conductivity are realized;
4) the high-purity insulating diamond film and the high-B-doped conductive diamond circuit in the circuit board can be completed in the same CVD equipment, and the substrate layer, the circuit structure and the component controllable cavity have low equipment investment cost and high production efficiency.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
FIG. 1 is a schematic view showing a process for producing a single-layer insulating diamond film and a conductive diamond circuit in example 1;
FIG. 2 is a schematic view showing a process for producing an upper insulating diamond film and a conductive diamond circuit in example 2;
FIG. 3 is a schematic structural view of a high-thermal-conductivity, wear-resistant and corrosion-resistant diamond circuit board of a three-layer structure prepared in example 3;
in the figure: 1-substrate, 2-insulating diamond film, 3-conductive diamond circuit and 4-mask plate.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms like "upper", "lower", "top", "bottom", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.
Example 1
A single-layer structure high-heat-conductivity wear-resistant corrosion-resistant diamond circuit board comprises a single-layer high-purity insulating diamond film 2, wherein a high-B-doped conductive diamond circuit 3 is arranged on the top surface of the insulating diamond film 1, as shown in d in figure 1; wherein the insulating diamond film 2 is composed of insulating high-purity microcrystalline diamond, and the conductive diamond circuit 3 is composed of nanocrystalline conductive diamond with high B-doped amount.
The preparation method of the diamond circuit board with the single-layer structure and the high thermal conductivity, wear resistance and corrosion resistance as shown in figure 1 comprises the following steps:
1) using Si sheet as substrate 1, cleaning substrate 1, and performing microwave plasma CVD with hydrogen and CH4As a precursor, a single-layer insulating diamond film 2 of high purity is deposited, as shown in fig. 1 as a;
2) covering a mask plate 4 with hollow circuit pattern on the top surface of the single-layer insulating diamond film 2 obtained in the step 1), as shown in b in FIG. 1, and performing microwave plasma CVD on the mask plate with hydrogen and CH4Adding B into the first body2H6Depositing a high B-doped single layer conductive diamond circuit 3, as shown in fig. 1 c;
3) the mask plate 4 and the substrate 1 are removed to obtain a diamond circuit board with high thermal conductivity, wear resistance and corrosion resistance, which is a single-layer structure and consists of a high-purity insulating diamond film 2 and a high-B-doped conductive diamond circuit 3, as shown in d in FIG. 1.
Example 2
A diamond circuit board with a two-layer structure and high thermal conductivity, wear resistance and corrosion resistance comprises an upper layer of insulating diamond film 2 and a lower layer of insulating diamond film 2 with high purity, wherein the top surfaces of the upper layer of insulating diamond film 2 and the lower layer of insulating diamond film 2 are respectively provided with a conductive diamond circuit 3 with high B-doped amount, and the conductive diamond circuit 3 on the lower layer of insulating diamond film 2 is embedded in the upper layer of insulating diamond film 2, as shown by j in figure 2; wherein, the lower layer of insulating diamond film 2 is composed of high-purity micro-crystal diamond, and the upper layer of insulating diamond film 2 is composed of high-purity nano-crystal diamond; the upper and lower layers of conductive diamond circuits 3 are both composed of nanocrystalline conductive diamond with high B content.
The preparation method of the diamond circuit board with the two-layer structure and high thermal conductivity, wear resistance and corrosion resistance, as shown in fig. 1 and fig. 2, comprises the following steps:
1) using a strong carbide forming material Ti as a substrate 1, cleaning the substrate 1, and then performing a hot wire CVD process using hydrogen, Ar and CH4As a precursor, a lower insulating diamond film 2 of high purity is deposited, as shown by a in fig. 1;
2) covering a mask plate 4 with hollow circuit patterns on the top surface of the lower layer insulating diamond film 2 prepared in the step 1), as shown in b in figure 1, and performing thermal filament CVD on the mask plate with hydrogen, Ar and CH4Hydrogen containing trimethyl borate is added to the precursor of the composition to deposit a highly B-doped underlying conductive diamond circuit 3, as shown in figure 1 c;
3) removing the mask plate 4 and the substrate 1 to obtain a lower layer insulating diamond film 2 and a conductive diamond circuit 3 composed of a high purity insulating diamond film 2 and a high B-doped conductive diamond circuit 3, as shown in d in FIG. 1;
4) placing a mask plate 4, as shown in fig. 2, on the lower insulating diamond film 2 and the conductive diamond circuit 3 prepared in step 3) to cover the lower conductive diamond circuit 3, and performing hot wire CVD with hydrogen, Ar and CH4Depositing an insulating diamond film 2 which just can fill the gaps of the lower conductive diamond circuit 3 as a precursor, as shown in f in figure 2, removing a mask plate 4 as shown in g in figure 2, and continuously depositing the insulating diamond film 2 with a certain thickness to finally obtain an upper insulating diamond film 2 as shown in h in figure 2;
5) covering a mask plate 4 with hollow circuit pattern on the top surface of the upper layer insulating diamond film 2 prepared in the step 4), as shown in h in FIG. 2, and performing thermal filament CVD on the mask plate with hydrogen, Ar and CH4Hydrogen containing trimethyl borate is added into the precursor body to deposit the upper layer conductive diamond circuit 3 with high B-doped amount, as shown in figure 2 i;
6) and removing the mask plate to obtain the high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board with a two-layer structure, as shown by j in fig. 2.
Example 3
A three-layer structure high-heat-conductivity wear-resistant corrosion-resistant diamond circuit board comprises an upper layer, a middle layer and a lower layer of high-purity insulating diamond films 2, wherein the top surfaces of the upper layer, the middle layer and the lower layer of insulating diamond films 2 are respectively provided with a high-B-doped conductive diamond circuit 3, the conductive diamond circuit 3 on the lower layer of insulating diamond film 2 is embedded in the middle layer of insulating diamond film 2, and the conductive diamond circuit 3 on the middle layer of insulating diamond film 2 is embedded in the upper layer of insulating diamond film 2, as shown in figure 3; wherein, the upper, middle and lower layers of insulating diamond films 2 are all composed of two mixed diamonds of high-purity micro-crystal/nano-crystal; the upper, middle and lower layers of conductive diamond circuits 3 are all composed of nanocrystalline conductive diamond with high B-doped amount.
The preparation method of the diamond circuit board with the three-layer structure and high thermal conductivity, wear resistance and corrosion resistance, as shown in fig. 1, fig. 2 and fig. 3, comprises the following steps:
1) using a SiC wafer as a substrate 1, cleaning the substrate 1, and performing direct current arc plasma jet CVD using hydrogen, Ar and C2H2As a precursor, a lower insulating diamond film 2 of high purity is deposited, as shown in fig. 1 as a;
2) covering a mask plate 4 with hollow circuit pattern on the top surface of the lower layer insulating diamond film 2 prepared in step 1), as shown in b in FIG. 1, and spraying hydrogen, Ar and C by using DC arc plasma CVD method2H2Hydrogen gas containing trimethyl boron is added into the precursor body, and a low-layer conductive diamond circuit 3 with high B-doped quantity is deposited, as shown in a figure 1 c;
3) removing the mask plate 4 and the substrate 1 to obtain a lower layer insulating diamond film 2 and a conductive diamond circuit 3 composed of a high purity insulating diamond film 2 and a high B-doped conductive diamond circuit 3, as shown in d in FIG. 1;
4) placing a mask plate 4, as shown in fig. 2, on the lower insulating diamond film 2 and the conductive diamond circuit 3 prepared in step 3) to cover the lower conductive diamond circuit 3, and performing direct current arc plasma jet CVD with hydrogen and Ar and C2H2Depositing an insulating diamond film 2 which just can fill the gaps of the lower conductive diamond circuit 3 as a precursor body, as shown in f in figure 2, removing the mask plate 4 as shown in g in figure 2, and continuously depositing the insulating diamond film 2 with a certain thickness to finally obtain an intermediate insulating diamond film 2 as shown in h in figure 2;
5) covering a mask plate 4 with hollow circuit pattern on the top surface of the middle layer insulating diamond film 2 prepared in the step 4), as shown in h in FIG. 2, and performing direct current arc plasma jet CVD on the mask plate with hydrogen, Ar and C2H2Hydrogen containing trimethylboron is added into the precursor body to deposit a middle layer conductive diamond circuit 3 with high B-doped amount, as shown in figure 2 as i;
6) removing the mask plate to obtain a middle layer insulating diamond film 2 and a conductive diamond circuit 3, as shown by j in fig. 2;
7) placing a mask plate which can just cover the middle layer conductive diamond circuit 3 on the middle layer insulating diamond film 2 and the conductive diamond circuit 3 prepared in the step 6), and performing direct current arc plasma jet CVD with hydrogen, Ar and C2H2Depositing an insulating diamond film 2 which just can fill the gaps of the middle-layer conductive diamond circuit 3 as a precursor, then removing the mask plate 4, and continuously depositing the insulating diamond film 2 with a certain thickness to finally obtain an upper-layer insulating diamond film 2;
8) covering a mask plate 4 with a hollow circuit pattern on the top surface of the upper layer of insulating diamond film 2 prepared in the step 6), and spraying hydrogen, Ar and C by using a direct current arc plasma CVD method2H2Hydrogen containing trimethyl boron is added into the precursor body, and an upper layer conductive diamond circuit 3 with high B-doped amount is deposited;
9) and removing the mask plate to obtain the diamond circuit board with a three-layer structure, high thermal conductivity, wear resistance and corrosion resistance, as shown in fig. 3.
Example 4
Example 4 is the same as example 1, except that: in the structure of the diamond circuit board, a Si sheet is arranged on the bottom surface of a single-layer high-purity insulating diamond film 2 as a substrate 1; correspondingly, in the preparation method, in the step 3), the mask plate 4 is removed, and the substrate 1 is reserved.
Example 5
Example 5 is the same as example 2, except that: in the structure of the diamond circuit board, a strong carbide forming material Ti is arranged on the bottom surface of a lower layer insulation diamond film 2 as a substrate 1; correspondingly, in the preparation method, in the step 3), the mask plate 4 is removed, and the substrate 1 is reserved.
Example 6
Example 6 is the same as example 3, except that: in the structure of the diamond circuit board, a SiC sheet is arranged on the bottom surface of a lower layer insulation diamond film 2 as a substrate 1; correspondingly, in the preparation method, in the step 3), the mask plate 4 is removed, and the substrate 1 is reserved.
It should be noted that the above-mentioned embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and the features of the embodiments and examples in the present application may be combined with each other without conflict. Any modification, equivalent replacement, or improvement made within the technical scope and principle of the present disclosure should be included in the protection scope of the present disclosure.

Claims (8)

1. A diamond circuit board with high thermal conductivity, wear resistance and corrosion resistance is characterized in that: the high-purity diamond film comprises a single-layer high-purity insulating diamond film, wherein a high-B-doped conductive diamond circuit is arranged on the top surface of the insulating diamond film; wherein, the insulating diamond film is composed of one or more of single crystal, micron crystal, nano crystal or super nano crystal diamond with high purity, and the conductive diamond circuit is composed of one or more of single crystal, micron crystal, nano crystal or super nano crystal conductive diamond with high B doping amount.
2. A high thermal conductivity, wear and corrosion resistant diamond circuit board according to claim 1, wherein: the bottom surface of the insulating diamond film is provided with a substrate.
3. A diamond circuit board with high thermal conductivity, wear resistance and corrosion resistance is characterized in that: the high-purity diamond film comprises a plurality of layers of high-purity insulating diamond films, wherein the top surface of each layer of insulating diamond film is provided with a high-B-doped conductive diamond circuit, and the conductive diamond circuits on the other layers of insulating diamond films are embedded in the insulating diamond film on the upper layer except the conductive diamond circuit on the insulating diamond film on the top layer; wherein, the insulating diamond film is composed of one or more of high-purity single crystal, micron crystal, nano crystal or super nano crystal diamond, the conductive diamond circuit is composed of one or more of high B-doped single crystal, micron crystal, nano crystal or super nano crystal conductive diamond, and the number of layers of the insulating diamond film and the conductive diamond circuit is 2-99.
4. A high thermal conductivity, wear and corrosion resistant diamond circuit board according to claim 3, wherein: the bottom surface of the bottom layer insulating diamond film is provided with a substrate.
5. The method for preparing a diamond circuit board with high thermal conductivity, wear resistance and corrosion resistance as claimed in claim 1, comprising the steps of:
1) cleaning a substrate, and depositing a single-layer insulating diamond film by using hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies by using a CVD (chemical vapor deposition) method;
2) covering a mask plate with a hollowed circuit pattern on the top surface of the single-layer insulating diamond film in the step 1), adding a gas containing B into a precursor composed of hydrogen and a gas containing carbon or hydrogen, argon and a gas containing carbon by using a CVD method, and depositing a single-layer conductive diamond circuit;
3) and removing the mask plate and the substrate to obtain the diamond circuit board with a single-layer structure, high thermal conductivity, wear resistance and corrosion resistance.
6. The method for preparing a diamond circuit board with high thermal conductivity, wear resistance and corrosion resistance as claimed in claim 2, comprising the steps of:
1) cleaning a substrate, and depositing a single-layer insulating diamond film by using a CVD method and using hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies;
2) covering a mask plate with a hollowed circuit pattern on the top surface of the single-layer insulating diamond film in the step 1), adding a gas containing B into a precursor composed of hydrogen and a gas containing carbon or hydrogen, argon and a gas containing carbon by using a CVD method, and depositing a single-layer conductive diamond circuit;
3) and removing the mask plate and reserving the substrate to obtain the diamond circuit board with the single-layer structure and high thermal conductivity, wear resistance and corrosion resistance.
7. The method for preparing a diamond circuit board with high thermal conductivity, wear resistance and corrosion resistance as claimed in claim 3, comprising the steps of:
1) cleaning a substrate, and depositing a first layer of insulating diamond film by using hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies by using a CVD (chemical vapor deposition) method;
2) covering a mask plate with a hollowed circuit pattern on the top surface of the first layer of the insulating diamond film in the step 1), adding a gas containing B into a precursor body consisting of hydrogen and a gas containing carbon or hydrogen, argon and a gas containing carbon by using a CVD method, and depositing a first layer of a conductive diamond circuit;
3) removing the mask plate and the substrate to obtain a first layer of insulating diamond film and a conductive diamond circuit;
4) placing a mask plate which can just cover the first layer of conductive diamond circuit on the first layer of insulating diamond film and the conductive diamond circuit in the step 3), depositing the insulating diamond film which just can fill the gap of the first layer of conductive diamond circuit by using hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies by using a CVD method, then removing the mask plate, and continuing to deposit the insulating diamond film to obtain a second layer of insulating diamond film;
5) covering a mask plate with a hollowed circuit pattern on the top surface of the second layer of the insulating diamond film in the step 4), adding a gas containing B into a first body consisting of hydrogen and a gas containing carbon or hydrogen, argon and a gas containing carbon by using a CVD method, and depositing a second layer of the conductive diamond circuit;
6) removing the mask plate to obtain a second layer of insulating diamond film and a conductive diamond circuit;
7) and (4) repeating the steps 4) to 6) repeatedly, and finally obtaining the high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board with the multilayer structure.
8. The method for preparing a diamond circuit board with high thermal conductivity, wear resistance and corrosion resistance as claimed in claim 4, comprising the steps of:
1) cleaning a substrate, and depositing a first layer of insulating diamond film by using a CVD method and hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies;
2) covering a mask plate with a hollowed circuit pattern on the top surface of the first layer of the insulating diamond film in the step 1), adding a gas containing B into a precursor body consisting of hydrogen and a gas containing carbon or hydrogen, argon and a gas containing carbon by using a CVD method, and depositing a first layer of a conductive diamond circuit;
3) removing the mask plate and reserving the substrate to obtain a first layer of insulating diamond film and a conductive diamond circuit;
4) placing a mask plate which can just cover the first layer of conductive diamond circuit on the first layer of insulating diamond film and the conductive diamond circuit in the step 3), depositing the insulating diamond film which just can fill the gap of the first layer of conductive diamond circuit by using hydrogen and carbon-containing gas or hydrogen, argon and carbon-containing gas as precursor bodies by using a CVD method, then removing the mask plate, and continuing to deposit the insulating diamond film to obtain a second layer of insulating diamond film;
5) covering a mask plate with a hollowed circuit pattern on the top surface of the second layer of the insulating diamond film in the step 4), adding a gas containing B into a first body consisting of hydrogen and a gas containing carbon or hydrogen, argon and a gas containing carbon by using a CVD method, and depositing a second layer of the conductive diamond circuit;
6) removing the mask plate to obtain a second layer of insulating diamond film and a conductive diamond circuit;
7) and (4) repeating the steps 4) to 6) repeatedly, and finally obtaining the high-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board with the multilayer structure.
CN202210157698.2A 2022-02-21 2022-02-21 High-thermal-conductivity wear-resistant corrosion-resistant diamond circuit board and preparation method thereof Pending CN114501783A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116916547A (en) * 2023-09-14 2023-10-20 中国科学院宁波材料技术与工程研究所 Diamond-based packaging circuit board and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116916547A (en) * 2023-09-14 2023-10-20 中国科学院宁波材料技术与工程研究所 Diamond-based packaging circuit board and preparation method thereof
CN116916547B (en) * 2023-09-14 2023-12-05 中国科学院宁波材料技术与工程研究所 Diamond-based packaging circuit board and preparation method thereof

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