CN114498287B - 一种半导体光纤耦合装置 - Google Patents
一种半导体光纤耦合装置 Download PDFInfo
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- CN114498287B CN114498287B CN202210340200.6A CN202210340200A CN114498287B CN 114498287 B CN114498287 B CN 114498287B CN 202210340200 A CN202210340200 A CN 202210340200A CN 114498287 B CN114498287 B CN 114498287B
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- slow axis
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000010168 coupling process Methods 0.000 title claims abstract description 26
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 26
- 230000008878 coupling Effects 0.000 title claims abstract description 25
- 239000013307 optical fiber Substances 0.000 title claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 52
- 239000000835 fiber Substances 0.000 claims description 8
- 238000003780 insertion Methods 0.000 claims description 7
- 230000037431 insertion Effects 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 27
- 238000001816 cooling Methods 0.000 abstract description 3
- 101100234408 Danio rerio kif7 gene Proteins 0.000 description 51
- 101100221620 Drosophila melanogaster cos gene Proteins 0.000 description 51
- 101100007330 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) COS2 gene Proteins 0.000 description 51
- 101100398237 Xenopus tropicalis kif11 gene Proteins 0.000 description 51
- 238000009434 installation Methods 0.000 description 25
- 230000000694 effects Effects 0.000 description 3
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- 230000005540 biological transmission Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
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- 230000002349 favourable effect Effects 0.000 description 1
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- 238000011900 installation process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- -1 preferably Substances 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202210340200.6A CN114498287B (zh) | 2022-04-02 | 2022-04-02 | 一种半导体光纤耦合装置 |
Applications Claiming Priority (1)
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CN202210340200.6A CN114498287B (zh) | 2022-04-02 | 2022-04-02 | 一种半导体光纤耦合装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114498287A CN114498287A (zh) | 2022-05-13 |
CN114498287B true CN114498287B (zh) | 2022-06-28 |
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CN202210340200.6A Active CN114498287B (zh) | 2022-04-02 | 2022-04-02 | 一种半导体光纤耦合装置 |
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CN (1) | CN114498287B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN203398519U (zh) * | 2013-07-29 | 2014-01-15 | 武汉锐科光纤激光器技术有限责任公司 | 一种斜面式多管半导体激光器耦合装置 |
CN111613969A (zh) * | 2019-02-26 | 2020-09-01 | 中国科学院半导体研究所 | 半导体激光合束装置 |
CN112310800A (zh) * | 2020-11-04 | 2021-02-02 | 中国工程物理研究院应用电子学研究所 | 一种紧凑式光纤耦合输出半导体激光器 |
CN213341079U (zh) * | 2020-12-04 | 2021-06-01 | 浙江热刺激光技术有限公司 | 半导体光纤耦合激光器 |
CN112886390A (zh) * | 2020-05-27 | 2021-06-01 | 山东华光光电子股份有限公司 | 一种多组对称阵列的大功率光纤耦合半导体激光器封装结构与方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9065237B2 (en) * | 2011-12-07 | 2015-06-23 | Jds Uniphase Corporation | High-brightness spatial-multiplexed multi-emitter pump with tilted collimated beam |
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2022
- 2022-04-02 CN CN202210340200.6A patent/CN114498287B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN203398519U (zh) * | 2013-07-29 | 2014-01-15 | 武汉锐科光纤激光器技术有限责任公司 | 一种斜面式多管半导体激光器耦合装置 |
CN111613969A (zh) * | 2019-02-26 | 2020-09-01 | 中国科学院半导体研究所 | 半导体激光合束装置 |
CN112886390A (zh) * | 2020-05-27 | 2021-06-01 | 山东华光光电子股份有限公司 | 一种多组对称阵列的大功率光纤耦合半导体激光器封装结构与方法 |
CN112310800A (zh) * | 2020-11-04 | 2021-02-02 | 中国工程物理研究院应用电子学研究所 | 一种紧凑式光纤耦合输出半导体激光器 |
CN213341079U (zh) * | 2020-12-04 | 2021-06-01 | 浙江热刺激光技术有限公司 | 半导体光纤耦合激光器 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A semiconductor optical fiber coupling device Effective date of registration: 20230224 Granted publication date: 20220628 Pledgee: Haidian Beijing science and technology enterprise financing Company limited by guarantee Pledgor: BEIJING RECI LASER TECHNOLOGY Co.,Ltd. Registration number: Y2023110000079 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20220628 Pledgee: Haidian Beijing science and technology enterprise financing Company limited by guarantee Pledgor: BEIJING RECI LASER TECHNOLOGY Co.,Ltd. Registration number: Y2023110000079 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A semiconductor fiber coupling device Granted publication date: 20220628 Pledgee: Haidian Beijing science and technology enterprise financing Company limited by guarantee Pledgor: BEIJING RECI LASER TECHNOLOGY Co.,Ltd. Registration number: Y2024110000076 |