CN114496352A - Nano silver wire protective layer structure and preparation method thereof - Google Patents

Nano silver wire protective layer structure and preparation method thereof Download PDF

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CN114496352A
CN114496352A CN202011264100.7A CN202011264100A CN114496352A CN 114496352 A CN114496352 A CN 114496352A CN 202011264100 A CN202011264100 A CN 202011264100A CN 114496352 A CN114496352 A CN 114496352A
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layer
silver
substrate
nano
silver wire
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王业升
方玮嘉
朱俊鸿
萧仲钦
林雅婷
陈世清
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Cambrios Film Solutions Xiamen Corp
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Priority to KR1020210032690A priority patent/KR20220064873A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
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    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal

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Abstract

The invention discloses a nano silver wire protective layer structure, comprising: a substrate; a layer of silver nanowires disposed on the substrate to cover only a portion of the surface of the substrate, wherein the layer of silver nanowires comprises: a plurality of silver nanowire channels; and a nano silver wire protection layer which is arranged on the nano silver wire layer, only covers the area corresponding to the plurality of nano silver wire channels and contains an anti-photo-oxidant. A preparation method of the nano silver wire protective layer structure. The nano silver wire protection layer structure and the preparation method thereof can be applied to a touch sensor.

Description

Nano silver wire protective layer structure and preparation method thereof
Technical Field
The present invention relates to a nano silver wire protection layer structure, and more particularly, to a nano silver wire protection layer structure in which a nano silver wire protection layer covers only regions corresponding to a plurality of nano silver wire channels. The invention also relates to a preparation method of the nano silver wire protective layer structure.
Background
The conventional silver nanowire protection layer structure and the preparation method thereof are shown in fig. 1. In the conventional silver nanowire protection layer structure 10, after a patterned Silver Nanowire (SNW) layer 12 is disposed on a substrate 11, a silver nanowire protection layer 13 disposed on the silver nanowire layer 12 covers the entire area of the substrate 11.
The nano-silver protective layer has the main function of protecting the nano-silver wire layer, and the problem that the nano-silver wire layer fails due to photo-oxidation to cause poor conductivity is avoided.
However, the photo-oxidation resistant agent in the nano-silver wire protective layer component of the conventional nano-silver wire protective layer structure can absorb blue light and purple light, and the nano-silver wire protective layer covers the whole area of the substrate, so that the conventional nano-silver wire protective layer structure has an obvious yellowing phenomenon.
Disclosure of Invention
In order to solve the problem that the whole nano silver wire protective layer structure in the prior art is obviously yellowish, the invention provides a novel nano silver wire protective layer structure and a preparation method thereof.
To achieve the above and other objects, the present invention provides a protective layer structure for a silver nanowire, comprising:
a substrate;
a layer of silver nanowires disposed on the substrate to cover only a portion of the surface of the substrate, wherein the layer of silver nanowires comprises:
a plurality of silver nanowire channels; and
and the nano silver wire protective layer is arranged on the nano silver wire layer, only covers the areas corresponding to the nano silver wire channels and contains an anti-photo-oxidant.
In the above-mentioned structure of the protective layer for the nano silver wire, the coverage area of the protective layer for the nano silver wire can occupy 6% to 60% of the surface of the substrate.
In the above-mentioned structure of the silver nanowire protection layer, the width of the silver nanowire protection layer may be between 2 μm and 1 mm.
In the aforementioned structure of the silver nanowire protection layer, the thickness of the silver nanowire protection layer may be between 10nm and 2000 nm.
In the above-mentioned structure of the silver nanowire protection layer, the plurality of silver nanowire channels may be wavy.
The aforementioned silver nanowire protection layer structure, wherein the silver nanowire layer further comprises:
and the nano silver wire prostheses are arranged among the nano silver wire channels.
The above-mentioned silver nanowire protection layer structure may further comprise:
and a plurality of leads arranged between the nano-silver wire layer and the substrate.
The above-mentioned silver nanowire protection layer structure may further comprise:
and the covering layer is arranged on the nano silver wire protective layer.
The above-mentioned silver nanowire protection layer structure may further comprise:
a second silver nanowire protection layer structure disposed under the silver nanowire protection layer structure, the second silver nanowire protection layer structure comprising:
a second substrate;
a second layer of silver nanowires disposed on the second substrate covering only a portion of the surface of the second substrate, wherein the second layer of silver nanowires comprises:
a plurality of second nanosilver wire channels;
a second silver nanowire protection layer which is arranged on the second silver nanowire layer, only covers the areas corresponding to the second silver nanowire channels and contains an anti-photo-oxidant; and
and the second covering layer is arranged on the second nano silver wire protection layer.
The above-mentioned silver nanowire protection layer structure may further comprise:
a second layer of silver nanowires disposed beneath the substrate covering only a portion of the surface of the substrate, wherein the second layer of silver nanowires comprises:
a plurality of second nanosilver wire channels;
a second silver nanowire protection layer which is arranged below the second silver nanowire layer, only covers the areas corresponding to the plurality of second silver nanowire channels and contains an anti-photo-oxidant; and
and a second capping layer disposed below the second nano-silver wire protection layer.
In order to achieve the above and other objects, the present invention also provides a method for preparing a protective layer structure of a silver nanowire, comprising:
providing a substrate;
disposing a layer of silver nanowires over the substrate, covering only a portion of the substrate surface, wherein the layer of silver nanowires comprises:
a plurality of silver nanowire channels; and
and arranging a nano silver wire protective layer above the nano silver wire layer, wherein the nano silver wire protective layer only covers the areas corresponding to the nano silver wire channels and contains an anti-photo-oxidant.
In the above method, the coverage area of the silver nanowire protection layer may occupy 6% to 60% of the surface of the substrate.
In the above method, the width of the silver nanowire protection layer may be between 2 μm and 1 mm.
In the above method, the thickness of the silver nanowire protection layer may be between 10nm and 2000 nm.
In the above preparation method, the plurality of silver nanowire channels may be wavy.
In the above preparation method, the layer of nano-silver wires may further include:
and the nano silver wire prostheses are arranged among the nano silver wire channels.
The above preparation method may further comprise:
and a plurality of leads are arranged above the substrate and are arranged between the nano silver wire layer and the substrate.
The above preparation method may further comprise:
and arranging a covering layer above the nano silver wire protective layer.
The above preparation method may further comprise:
disposing a second substrate under the substrate;
disposing a second nano-silver wire layer above the second substrate, wherein the second nano-silver wire layer is disposed below the substrate and covers only a portion of the second substrate, and the second nano-silver wire layer comprises:
a plurality of second nanosilver wire channels;
a second nano silver wire protection layer is arranged above the second substrate, is arranged above the second nano silver wire layer and below the substrate, only covers the areas corresponding to the plurality of second nano silver wire channels, and contains an anti-photo-oxidant; and
and arranging a second covering layer on the second nano silver wire protective layer, wherein the second covering layer is positioned below the substrate.
The above preparation method may further comprise:
disposing a second layer of silver nanowires under the substrate, covering only a portion of the surface of the substrate, wherein the second layer of silver nanowires comprises:
a plurality of second nanosilver wire channels;
a second nano silver wire protective layer is arranged below the second nano silver wire layer, only covers the areas corresponding to the second nano silver wire channels, and contains an anti-photo-oxidant; and
and arranging a second covering layer below the second nano silver wire protective layer.
The silver nanowire protection layer structure and the preparation method thereof can effectively solve the problem that the whole silver nanowire protection layer structure in the prior art is obviously yellowish. The nano silver wire protective layer structure and the preparation method thereof can improve the optical performance of the touch sensor using the nano silver wire protective layer structure.
Drawings
Fig. 1 is a prior art nano silver wire protective layer structure.
Fig. 2 is a schematic view of the protective layer structure of the silver nanowires of example 1.
Fig. 3 is a schematic sectional view of the protective layer structure of the nano-silver wire of example 1 along the sectional line a-a.
FIG. 4 is a schematic sectional view of the protective layer structure of the nano-silver wire of example 1 along the sectional line B-B.
Fig. 5 is a flowchart of a method for preparing a protective layer structure of a silver nanowire of example 1.
Fig. 6 is a schematic view of a protective layer structure of a silver nanowire of example 2.
Fig. 7 is a schematic sectional view of the nano-silver wire protection layer structure of example 2 along the sectional line a-a.
FIG. 8 is a schematic sectional view of the protective layer structure of the nano-silver wire of example 2 along the sectional line B-B.
Fig. 9 is a schematic view of the protective layer structure of the silver nanowires of example 3.
Fig. 10 is a schematic view of a flow of preparing the upper structure of the silver nanowire protection layer structure of example 3.
Fig. 11 is a schematic view of a flow of preparing a lower structure of the nano silver wire protective layer structure of example 3.
Fig. 12 is a schematic view of the protective layer structure of the silver nanowires of example 4 and the flow of its preparation.
Description of reference numerals:
10 nanometer silver line protective layer structure
11 base material
12 nm silver wire layer
13 nanometer silver wire protective layer
20 nanometer silver line protective layer structure
21 base material
22 nm silver wire layer
23 nanometer silver wire protective layer
30 nanometer silver line protective layer structure
31 base material
32 nm silver wire layer
321 nanometer silver wire channel
322 nanometer silver thread prosthesis
33 nanometer silver line protective layer
40 nanometer silver line protection layer structure
41 base material
41' second substrate
42 nm silver wire layer
42' second silver nanowire layer
421 nanometer silver line channel
421' second nano silver wire channel
422 nanometer silver wire prosthesis
422' second nanometer silver wire prosthesis
43 nanometer silver line protective layer
43' second silver nanowire protection layer
45 wire
45' second conductive line
46 coating layer
46' coating
50 nanometer silver line protective layer structure
51 base material
52 nm silver wire layer
52' second silver nanowire layer
521 nanometer silver wire channel
521' second silver nanowire channel
522 nanometer silver wire prosthesis
522' second nano silver wire prosthesis
53 nanometer silver line protective layer
53' second silver nanowire protection layer
55 conducting wire
55' second conductive line
56 cover layer
56' coating
Step S1
Step S2
Step S3
Section A-A
Section B-B
Detailed Description
The following description of the embodiments of the present invention is provided by way of specific examples, and other advantages and effects of the present invention will be apparent to those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and its several details are capable of modifications and various changes in detail without departing from the spirit of the invention.
As used in the specification and the appended claims, the singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise.
As used in the specification and the appended claims, the term "or" includes "and/or" is used in its sense unless the context clearly dictates otherwise.
The "Pitch" as used herein refers to the shortest distance between the central axis of a nano-silver wire channel and the central axis of another adjacent nano-silver wire channel.
Example 1
As shown in fig. 2 to 4, the silver nanowire protection layer structure 20 of embodiment 1 includes: a substrate 21 (not shown in FIG. 2); a nano-silver wire layer 22 disposed on the substrate 21 and covering only a partial region of the surface of the substrate 21, wherein the nano-silver wire layer 22 comprises: a plurality of nano-silver wire channels 221; and a nano-silver wire protection layer 23 disposed on the nano-silver wire layer 22, covering only the regions corresponding to the plurality of nano-silver wire channels 221, and containing an antioxidant.
The silver nanowire protection layer structure of example 1 can be prepared by the preparation method as shown in fig. 5. The preparation method of the silver nanowire protection layer structure of example 1 shown in fig. 5 comprises the following steps: providing a substrate S1; disposing a layer of silver nanowires over the substrate, covering only a portion of the substrate surface, wherein the layer of silver nanowires comprises: a plurality of silver nanowire channels S2; and arranging a nano silver wire protection layer above the nano silver wire layer, wherein the nano silver wire protection layer only covers the areas corresponding to the plurality of nano silver wire channels and contains an anti-photo-oxidant S3.
Compared with the prior art, in the nano silver wire protection layer structure and the preparation method thereof of the embodiment 1, the nano silver wire protection layer only covers the area corresponding to the plurality of nano silver wire channels, so that the coverage area of the nano silver wire protection layer can be reduced, the problem that the whole nano silver wire protection layer structure in the prior art is obviously yellowish can be effectively solved, and the nano silver wire channels can be effectively prevented from being out of work due to photo-oxidation to cause poor conductivity.
In the silver nanowire protection layer structure and the method for manufacturing the same of embodiment 1, the coverage area of the silver nanowire protection layer is not particularly limited, and in a preferred embodiment, the coverage area of the silver nanowire protection layer occupies 6% to 60% of the surface of the substrate.
In the silver nanowire protection layer structure and the method for fabricating the same of embodiment 1, the width of the silver nanowire protection layer is not particularly limited, and in a preferred embodiment, the width of the silver nanowire protection layer is between 2 μm and 1 mm.
In the silver nanowire protection layer structure and the method for fabricating the same of embodiment 1, the thickness of the silver nanowire protection layer is not particularly limited, but in a preferred embodiment, the thickness of the silver nanowire protection layer is between 10nm and 2000 nm.
Example 2
As shown in fig. 6 to 8, the silver nanowire protection layer structure 30 of embodiment 2 includes: substrate 31 (not shown in fig. 6); a nano-silver wire layer 32 disposed on the substrate 31 and covering only a partial region of the surface of the substrate 31, wherein the nano-silver wire layer 32 comprises: a plurality of nano-silver wire channels 321; and a nano-silver wire protection layer 33 disposed on the nano-silver wire layer 32, covering only the region corresponding to the plurality of nano-silver wire channels 321, and containing an antioxidant.
Compared to example 1, the plurality of nano-silver wire channels in the nano-silver wire protection layer structure 30 of example 2 are wavy.
Compared to embodiment 1, the silver nanowire protection layer structure 30 of embodiment 2 further includes: a plurality of nano-silver wire prostheses 322 disposed 321 between the plurality of nano-silver wire channels.
In the nano-silver wire passivation layer structure of embodiment 2, the wavy nano-silver wire channels and the nano-silver wire prosthesis can prevent the touch sensor applying the nano-silver wire passivation layer from generating moire (moire pattern), so as to improve the optical properties of the touch sensor.
Example 3
As shown in fig. 9 to 11, the silver nanowire protection layer structure 40 of embodiment 3 includes: a substrate 41; a nano-silver wire layer 42 disposed on the substrate 41 and covering only a partial region of the surface of the substrate 41, wherein the nano-silver wire layer 42 comprises: a plurality of nanosilver line channels 421 (not shown in fig. 9); and a plurality of nano-silver wire prostheses 422 (not shown in fig. 9) disposed between the plurality of nano-silver wire channels 421; and a nano-silver wire protection layer 43 disposed on the nano-silver wire layer 42, covering only the region corresponding to the plurality of nano-silver wire channels 421, and containing an antioxidant.
Compared to embodiment 2, the silver nanowire protection layer structure 40 of embodiment 3 further includes: a plurality of wires 45 disposed between the nano-silver wire layer 42 and the substrate 41, but the invention is not limited thereto.
Compared to embodiment 2, the silver nanowire protection layer structure 40 of embodiment 3 further includes: and a capping layer 46 disposed on the nano-silver wire protection layer 43, but the present invention is not limited thereto.
Compared to embodiment 2, the silver nanowire protection layer structure 40 of embodiment 3 further includes: a second substrate 41' disposed under the substrate 41; a second layer 42' of silver nanowires, disposed on the second substrate 41' and under the substrate 41', covering only a portion of the surface of the second substrate 41', wherein the second layer 42' of silver nanowires comprises: a plurality of second nanosilver wire channels 421'; and a plurality of second nanosilver wire prostheses 422'; a second silver nanowire protection layer 43' disposed on the second silver nanowire layer 42' and under the substrate 41, covering only the regions corresponding to the plurality of second silver nanowire channels 421', and containing an anti-photo-oxidant; a plurality of second conductive lines 45' disposed between the second nano-silver line layer 42' and the second substrate 41 '; and a second capping layer 46' disposed on the second silver nanowire protection layer 42' and under the substrate 41 '.
The preparation process of the silver nanowire protection layer structure of example 3 can be as shown in fig. 9 to 11. As shown in fig. 10, the upper structure of the silver nanowire protection layer structure can be prepared by the following steps: providing a substrate 41; disposing a plurality of conductive wires 45 above the substrate 41, which are disposed between the plurality of silver nanowire channels 421 and the substrate 41; a nano-silver wire layer 42 is disposed above the substrate 41, and covers only a partial region of the surface of the substrate 41, wherein the nano-silver wire layer 42 comprises: a plurality of nanosilver line channels 421; and a plurality of nano-silver wire prostheses 422 disposed between the plurality of nano-silver wire channels 421; applying a flexographic printing technology, and arranging a nano silver line protection layer 43 above the nano silver line layer 42, wherein the nano silver line protection layer only covers the areas corresponding to the plurality of nano silver line channels 421 and contains an anti-photo-oxidant; and a capping layer 46 is disposed over the nano-silver wire protection layer 43.
As shown in fig. 11, the lower structure of the nano silver wire protection layer structure can be prepared by the following steps: providing a second substrate 41'; disposing a plurality of second conductive lines 45 'above the second substrate 41', which are disposed between the plurality of second silver nanowire channels 421 'and the second substrate 41'; disposing a second silver nanowire layer 42 'over the second substrate 41', which covers only a partial region of the surface of the second substrate 41', wherein the second silver nanowire layer 42' comprises: a plurality of second nanosilver wire channels 421'; and a plurality of second nano-silver wire prostheses 422 'disposed between the plurality of second nano-silver wire channels 421'; applying a flexographic printing technology, disposing a second silver nanowire protection layer 43' on the second silver nanowire layer 42', which covers only the region corresponding to the plurality of second silver nanowire channels 421' and contains an anti-photo-oxidant; and a second capping layer 46 'is disposed over the second nano-silver wire protection layer 43'.
Finally, the upper structure of the nano silver wire protective layer structure shown in fig. 10 and the lower structure of the nano silver wire protective layer structure shown in fig. 11 are stacked to obtain the nano silver wire protective layer structure of example 3.
The nano silver line protection layer and the second nano silver line protection layer of the nano silver line protection layer structure of embodiment 3 are prepared by a flexographic printing technique, but the present invention is not limited thereto, and the nano silver line protection layer and the second nano silver line protection layer may also be prepared by a gravure printing technique.
The silver nanowire channels and the second silver nanowire channels in the upper and lower structures of the silver nanowire protection layer structure of embodiment 3 are staggered by 90 °, so that the upper and lower structures can be used as the Tx layer and the Rx layer of the touch sensor, respectively.
Example 4
As shown in fig. 12, the silver nanowire protection layer structure 50 of example 4 includes: a base material 51; a nano-silver wire layer 52 disposed on the substrate 51 and covering only a partial region of the surface of the substrate 51, wherein the nano-silver wire layer 52 comprises: a plurality of nanosilver wire channels 521; and a plurality of nano-silver wire prostheses 522 disposed between the plurality of nano-silver wire channels 521; a nano silver wire protection layer 53 which is disposed on the nano silver wire layer 52, covers only the region corresponding to the plurality of nano silver wire channels 521, and contains an antioxidant; a plurality of wires 55 disposed between the nano-silver wire layer 52 and the substrate 51; and a capping layer 56 disposed on the nano-silver wire protection layer 53.
The silver nanowire protection layer structure 50 of example 4 further comprises: a second layer 52 'of silver nanowires disposed under the substrate 51 and covering only a portion of the surface of the substrate 51, wherein the second layer 52' of silver nanowires comprises: a plurality of second nanosilver wire channels 521'; and a plurality of second nano-silver wire prostheses 522 'disposed between the plurality of second nano-silver wire channels 521'; a second silver nanowire protection layer 53' disposed under the second silver nanowire layer 52', covering only a region corresponding to the plurality of second silver nanowire channels 521', and containing an anti-photo-oxidant; a plurality of second conductive lines 55 'disposed between the second nano-silver line layer 52' and the substrate 51; and a second capping layer 56 'disposed under the second nano silver line protection layer 53'.
Comparative example 1
Comparative example 1 is a nano silver wire structure not yet provided with a nano silver wire protective layer, which includes only: a substrate; and a nano-silver wire layer disposed on the substrate and covering only a partial region of the surface of the substrate, wherein the nano-silver wire layer comprises: a plurality of silver nanowire channels; and a plurality of nano silver wire prostheses which are arranged among the plurality of nano silver wire channels. The substrate and the layer of silver nanowires of comparative example 1 were the same as those of example 2, except that the structure of the silver nanowires of comparative example 1 did not include a protective layer of silver nanowires.
Comparative example 2
The structure of the nano-silver wire protective layer of comparative example 2 is substantially the same as that of example 2, except that in the structure of the nano-silver wire protective layer of comparative example 1, the nano-silver wire protective layer covers the entire area of the surface of the substrate.
Test example
To understand the efficacy of the silver nanowire protection layer structure of the present invention in improving the overall yellowing of the silver nanowire protection layer structure in the prior art, the optical properties of the silver nanowire protection layer structure or the silver nanowire structure of example 2, comparative example 1, and comparative example 2 were respectively tested.
The silver nanowire protection layer structures or silver nanowire structures of example 2, comparative example 1, and comparative example 2 have the same substrate and silver nanowire layer, and the difference is only that: the silver nanowire protection layer of example 2 only covers the regions corresponding to the plurality of silver nanowire channels; comparative example 1 did not contain a protective layer of silver nanowires; and the silver nanowire protective layer of comparative example 2 covered the entire area of the surface of the substrate.
Specifically, the sizes of the substrates in the silver nanowire protection layer structures or the silver nanowire structures of example 2, comparative example 1, and comparative example 2 were 15cm × 15 cm. The Pitch (Pitch) of the silver nanowire channels in the silver nanowire protection layer structures or the silver nanowire structures of example 2, comparative example 1, and comparative example 2 was 5.26 mm; the width is 0.1823 mm; the nano silver wire channel accounts for 10.4% of the surface of the substrate; the concentration of the silver nanowires in the silver nanowire layer was 0.07 wt%. The thickness of the silver nanowire protection layer in the silver nanowire protection layer structures of example 2 and comparative example 2 was 90 nm.
The present invention is directed to the silver nanowire protection layer structure or the silver nanowire structure of example 2, comparative example 1, and comparative example 2, and the average value thereof is calculated, and the test results are shown in the following table 1:
TABLE 1
Figure BDA0002775562370000131
Figure BDA0002775562370000141
The b value in table 1 can be used as an index of yellowing of the protective layer structure of the nano silver wire. Compared with the comparative example 2, the nano silver wire protective layer in the embodiment 2 of the present invention has a lower b value, so that the nano silver wire protective layer structure and the preparation method thereof of the present invention can effectively improve the problem that the whole nano silver wire protective layer structure in the prior art is obviously yellowish.
The above-described embodiments are merely illustrative of the present invention and are not intended to limit the present invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention is defined by the following claims.

Claims (20)

1. A silver nanowire protection layer structure, comprising:
a substrate;
a layer of silver nanowires disposed on the substrate to cover only a portion of the surface of the substrate, wherein the layer of silver nanowires comprises:
a plurality of silver nanowire channels; and
and the nano silver wire protective layer is arranged on the nano silver wire layer, only covers the areas corresponding to the nano silver wire channels and contains an anti-photo-oxidant.
2. The structure of claim 1, wherein the coverage area of the silver nanowire protective layer is 6% to 60% of the surface of the substrate.
3. The structure of claim 1, wherein the width of the silver nanowire protection layer is between 2 μm and 1 mm.
4. The structure of claim 1, wherein the thickness of the silver nanowire protection layer is between 10nm and 2000 nm.
5. The silver nanowire protective layer structure of claim 1, wherein the plurality of silver nanowire channels are wavy.
6. The structure of claim 5, wherein the layer of silver nanowires further comprises:
and the nano silver wire prostheses are arranged among the nano silver wire channels.
7. The silver nanowire protection layer structure of claim 1, further comprising:
and a plurality of leads arranged between the nano-silver wire layer and the substrate.
8. The silver nanowire protection layer structure of claim 1, further comprising:
and the covering layer is arranged on the nano silver wire protective layer.
9. The silver nanowire protection layer structure of claim 8, further comprising:
a second substrate disposed below the substrate;
a second layer of silver nanowires disposed on the second substrate and below the substrate, covering only a portion of the surface of the second substrate, wherein the second layer of silver nanowires comprises:
a plurality of second nanosilver wire channels;
a second silver nanowire protection layer which is arranged above the second silver nanowire layer and below the substrate, only covers the areas corresponding to the second silver nanowire channels and contains an anti-photo-oxidant; and
and a second covering layer arranged on the second nano silver wire protection layer and below the substrate.
10. The silver nanowire protection layer structure of claim 8, further comprising:
a second layer of silver nanowires disposed beneath the substrate covering only a portion of the surface of the substrate, wherein the second layer of silver nanowires comprises:
a plurality of second nanosilver wire channels;
a second silver nanowire protection layer which is arranged below the second silver nanowire layer, only covers the areas corresponding to the plurality of second silver nanowire channels and contains an anti-photo-oxidant; and
and a second capping layer disposed below the second nano-silver wire protection layer.
11. A method for preparing a nano silver wire protection layer structure is characterized by comprising the following steps:
providing a substrate;
disposing a layer of silver nanowires over the substrate, covering only a portion of the surface of the substrate, wherein the layer of silver nanowires comprises:
a plurality of nanosilver wire channels; and
and arranging a nano silver wire protective layer above the nano silver wire layer, wherein the nano silver wire protective layer only covers the areas corresponding to the nano silver wire channels and contains an anti-photo-oxidant.
12. The method according to claim 11, wherein the coverage area of the silver nanowire protection layer is 6 to 60% of the surface of the substrate.
13. The method of claim 11, wherein the width of the silver nanowire protection layer is between 2 μm and 1 mm.
14. The method of claim 11, wherein the thickness of the silver nanowire protection layer is between 10nm and 2000 nm.
15. The method of claim 11, wherein the plurality of silver nanowire channels are waved.
16. The method of claim 15, wherein the layer of nanosilver further comprises:
and the nano silver wire prostheses are arranged among the nano silver wire channels.
17. The method of claim 11, further comprising:
and a plurality of leads are arranged above the substrate and are arranged between the nano silver wire layer and the substrate.
18. The method of claim 11, further comprising:
and arranging a covering layer above the nano silver wire protective layer.
19. The method of claim 18, further comprising:
disposing a second substrate under the substrate;
disposing a second nanowire layer above the second substrate, the second nanowire layer disposed below the substrate and covering only a portion of the second substrate, wherein the second nanowire layer comprises:
a plurality of second nanosilver wire channels;
a second nano silver wire protection layer is arranged above the second substrate, is arranged above the second nano silver wire layer and below the substrate, only covers the areas corresponding to the plurality of second nano silver wire channels, and contains an anti-photo-oxidant; and
and arranging a second covering layer on the second nano silver wire protective layer, wherein the second covering layer is positioned below the substrate.
20. The method of claim 18, further comprising:
disposing a second layer of silver nanowires under the substrate, covering only a portion of the surface of the substrate, wherein the second layer of silver nanowires comprises:
a plurality of second nanosilver channels;
a second nano silver wire protective layer is arranged below the second nano silver wire layer, only covers the areas corresponding to the second nano silver wire channels, and contains an anti-photo-oxidant; and
and arranging a second covering layer below the second nano silver wire protective layer.
CN202011264100.7A 2020-11-12 2020-11-12 Nano silver wire protective layer structure and preparation method thereof Withdrawn CN114496352A (en)

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