CN114480915A - Processing technology of titanium-tungsten alloy target plate - Google Patents
Processing technology of titanium-tungsten alloy target plate Download PDFInfo
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- CN114480915A CN114480915A CN202111594983.2A CN202111594983A CN114480915A CN 114480915 A CN114480915 A CN 114480915A CN 202111594983 A CN202111594983 A CN 202111594983A CN 114480915 A CN114480915 A CN 114480915A
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- Prior art keywords
- titanium
- target plate
- tungsten
- plate
- tungsten alloy
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- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910001080 W alloy Inorganic materials 0.000 title claims abstract description 19
- 238000005516 engineering process Methods 0.000 title claims abstract description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 17
- 239000010937 tungsten Substances 0.000 claims abstract description 17
- 238000003723 Smelting Methods 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 5
- 238000003466 welding Methods 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 10
- 238000005096 rolling process Methods 0.000 claims description 9
- 238000005242 forging Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000005070 sampling Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 238000005098 hot rolling Methods 0.000 claims description 3
- 230000003746 surface roughness Effects 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C14/00—Alloys based on titanium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
- C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
The invention discloses a processing technology of a titanium-tungsten alloy target plate, which comprises the following steps: s1, manufacturing an ingot by the Ti-20W titanium-tungsten alloy target plate through vacuum arc melting; s2, selecting a pure titanium plate with a certain thickness and a purity of 99.7 percent and an ultrathin pure tungsten plate with a purity of 99.95 percent, preparing electrode rods in multiple layers according to a ratio of 81:19, wherein the number of layers is more than 30, and the diagonal line of the electrode size is less than 280 mm; and S3, assembling and welding electrodes, and smelting by adopting a high-vacuum and high-current-density high-power 3-ton vacuum consumable electrode furnace.
Description
Technical Field
The invention relates to the field of alloy target plate processing, in particular to a processing technology of a titanium-tungsten alloy target plate.
Background
With the increasing perfection of sputtering technology, vacuum sputtering coating technology has been greatly developed. The corresponding cathode target material is also greatly developed, and various pure metal target plates and various alloy target plates with different proportions are continuously developed. The vacuum coating industry has two main uses: respectively functional plating and decorative plating. Titanium tungsten is a refractory metal that can be used as both a decorative coating, such as a different color, and a functional coating, such as a high reflectivity. Cell phones, display screens, semiconductors, etc. The Ti-20W titanium tungsten alloy target plate is used as a cathode target with special functions and is widely applied to the priming coating of an LED alumina substrate. It has high adhesion and high plating rate. The great difference of the melting points of titanium and tungsten (titanium 1668 ℃ and tungsten 3400 ℃) brings great difficulty to the manufacture of the alloy. The sintering temperature of the powder metallurgy method is not easy to grasp, the defects of tungsten entrainment, segregation and the like are often generated, the film coating process is unstable, and the film yield is poor. The preparation of the Ti-20W titanium-tungsten alloy target material is blank at home.
Disclosure of Invention
The invention aims to solve the problems and designs a processing technology of a titanium-tungsten alloy target plate.
The technical scheme of the invention is that the processing technology of the titanium-tungsten alloy target plate is realized.
A processing technology of a titanium-tungsten alloy target plate comprises the following steps:
s1, manufacturing an ingot by the Ti-20W titanium-tungsten alloy target plate through vacuum arc melting;
s2, selecting a pure titanium plate with a certain thickness and a purity of 99.7 percent and an ultrathin pure tungsten plate with a purity of 99.95 percent, preparing electrode rods in multiple layers according to a ratio of 81:19, wherein the number of layers is more than 30, and the diagonal line of the electrode size is less than 280 mm;
s3, assembling and welding electrodes, and smelting by adopting a high-vacuum degree and high-current density high-power 3-ton vacuum consumable electrode furnace;
s4, the tungsten content is 19-21%, and the tungsten content in the titanium-tungsten alloy plate analyzed in the third place has a difference of no more than 5%;
s5, forging and cogging the cast ingot, wherein the cogging temperature is 1200-1250 ℃, the finish forging temperature is more than 850 ℃, making the cast ingot into a slab with the thickness of 80-100mm, and carrying out hot rolling on the slab after planing, wherein the rolling force of a rolling mill is more than 1000 tons;
s6, annealing and straightening the rolled target plate;
s7, cutting off the rolled target plate, planing, grinding and processing;
s8, processing steps on the periphery of the target, wherein the size of the target plate is 15 × 127 × 606, the surface roughness of the target plate is 1.6 microns;
and S9, fixing the processed target material on a film plating machine for vacuum sputtering film plating.
Preferably, the smelting times in the S3 are as follows: 3-4 times, sampling and analyzing ingots, and sampling points: 5-6 in the length direction of the ingot.
Preferably, the rolling temperature in S5 is: 1050 ℃ and 1100 ℃, and the finishing temperature is more than 800 ℃.
The invention has the beneficial effects that: the alloy target plate has higher reflectivity, high plating rate and high yield, greatly improves the quality and the yield of the LED, and is the basis for producing the high-performance LED. Has great economic benefit
Drawings
FIG. 1 is a schematic structural view of an alloy target plate according to the present invention;
Detailed Description
A processing technology of a titanium-tungsten alloy target plate comprises the following steps:
s1, manufacturing an ingot by the Ti-20W titanium-tungsten alloy target plate through vacuum arc melting;
s2, selecting a pure titanium plate with a certain thickness and a purity of 99.7 percent and an ultrathin pure tungsten sheet, preparing electrode rods in a multilayer mode according to the ratio of 81:19, wherein the diagonal of the electrode size is smaller than 280 mm;
s3, assembling and welding electrodes, and smelting by adopting a high-vacuum degree and high-current density high-power 3-ton vacuum consumable electrode furnace;
s4, the tungsten content is 19-21%, and the tungsten content in the titanium-tungsten alloy plate analyzed in the third place has a difference of no more than 5%;
s5, forging and cogging the cast ingot to prepare a slab with the thickness of 80-100mm, and hot rolling the planed slab by using a rolling mill with the rolling force of more than 1000 tons;
s6, annealing and straightening the rolled target plate;
s7, cutting off the rolled target plate, planing, grinding and processing;
s8, processing steps on the periphery of the target, wherein the size of the target plate is 15 × 127 × 606, the surface roughness of the target plate is 1.6 microns;
and S9, fixing the processed target material on a film plating machine for vacuum sputtering film plating.
The smelting times in S3 are as follows: 3-4 times, sampling and analyzing ingots, and sampling points: 5-6 in the length direction of the ingot.
The ultra-thin pure tungsten sheet is an ultra-thin pure tungsten sheet with the purity of 99.95 percent.
Rolling temperature in S5: 1050 ℃ and 1100 ℃, and the finishing temperature is more than 800 ℃.
In the step S2, the number of layers of the electrode rods is more than 30;
the cogging temperature in S5 is 1200-1250 ℃, and the finish forging temperature is more than 850 ℃.
The technical solutions described above only represent the preferred technical solutions of the present invention, and some possible modifications to some parts of the technical solutions by those skilled in the art all represent the principles of the present invention, and fall within the protection scope of the present invention.
Claims (6)
1. The processing technology of the titanium-tungsten alloy target plate comprises the following steps:
s1, manufacturing an ingot by the Ti-20W titanium-tungsten alloy target plate through vacuum arc melting;
s2, selecting a pure titanium plate with a certain thickness and a purity of 99.7 percent and an ultrathin pure tungsten sheet, preparing electrode rods in a multilayer mode according to the ratio of 81:19, wherein the diagonal of the electrode size is smaller than 280 mm;
s3, assembling and welding electrodes, and smelting by adopting a high-vacuum degree and high-current density high-power 3-ton vacuum consumable electrode furnace;
s4, the tungsten content is 19-21%, and the tungsten content in the titanium-tungsten alloy plate analyzed in the third place has a difference of no more than 5%;
s5, forging and cogging the cast ingot to prepare a slab with the thickness of 80-100mm, and hot rolling the planed slab by using a rolling mill with the rolling force of more than 1000 tons;
s6, annealing and straightening the rolled target plate;
s7, cutting off the rolled target plate, planing, grinding and processing;
s8, processing steps on the periphery of the target, wherein the size of the target plate is 15 × 127 × 606, the surface roughness of the target plate is 1.6 microns;
and S9, fixing the processed target material on a film plating machine for vacuum sputtering film plating.
2. The process of claim 1, wherein the number of times of melting in S3 is as follows: 3-4 times, sampling and analyzing ingots, and sampling points: 5-6 in the length direction of the ingot.
3. The processing technology of the titanium-tungsten alloy target plate according to claim 1, wherein the ultra-thin pure tungsten piece is an ultra-thin pure tungsten piece with a purity of 99.95%.
4. The process of claim 1, wherein the rolling temperature in S5 is: 1050 ℃ and 1100 ℃, and the finishing temperature is more than 800 ℃.
5. The process of claim 1, wherein the number of electrode rods in step S2 is greater than 30.
6. The process of claim 1, wherein the cogging temperature of S5 is 1200-1250 ℃ and the finish forging temperature is >850 ℃.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310293706.0A CN116287861A (en) | 2021-12-24 | 2021-12-24 | Titanium-tungsten alloy target plate and preparation method and application thereof |
| CN202111594983.2A CN114480915A (en) | 2021-12-24 | 2021-12-24 | Processing technology of titanium-tungsten alloy target plate |
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| CN202111594983.2A CN114480915A (en) | 2021-12-24 | 2021-12-24 | Processing technology of titanium-tungsten alloy target plate |
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| CN202310293706.0A Division CN116287861A (en) | 2021-12-24 | 2021-12-24 | Titanium-tungsten alloy target plate and preparation method and application thereof |
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| CN202310293706.0A Pending CN116287861A (en) | 2021-12-24 | 2021-12-24 | Titanium-tungsten alloy target plate and preparation method and application thereof |
| CN202111594983.2A Pending CN114480915A (en) | 2021-12-24 | 2021-12-24 | Processing technology of titanium-tungsten alloy target plate |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1447864A (en) * | 2000-08-15 | 2003-10-08 | 霍尼韦尔国际公司 | Sputtering target |
| CN101967569A (en) * | 2010-09-27 | 2011-02-09 | 西安西工大超晶科技发展有限责任公司 | Tungsten-containing titanium alloy smelting method |
| WO2019228963A1 (en) * | 2018-05-28 | 2019-12-05 | Life Vascular Devices Biotech, S.L. | A beta-phase titanium and tungsten alloy |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102965531B (en) * | 2012-12-14 | 2014-12-10 | 西北有色金属研究院 | Preparation method of titanium alloy cast ingot containing high-melting-point elements |
| CN110295301A (en) * | 2019-07-09 | 2019-10-01 | 中国兵器科学研究院宁波分院 | A kind of preparation method of tungsten-titanium alloy |
-
2021
- 2021-12-24 CN CN202310293706.0A patent/CN116287861A/en active Pending
- 2021-12-24 CN CN202111594983.2A patent/CN114480915A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1447864A (en) * | 2000-08-15 | 2003-10-08 | 霍尼韦尔国际公司 | Sputtering target |
| CN101967569A (en) * | 2010-09-27 | 2011-02-09 | 西安西工大超晶科技发展有限责任公司 | Tungsten-containing titanium alloy smelting method |
| WO2019228963A1 (en) * | 2018-05-28 | 2019-12-05 | Life Vascular Devices Biotech, S.L. | A beta-phase titanium and tungsten alloy |
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| CN116287861A (en) | 2023-06-23 |
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Application publication date: 20220513 |