CN114480902A - Method for inhibiting growth of metal whiskers in MAX phase - Google Patents

Method for inhibiting growth of metal whiskers in MAX phase Download PDF

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CN114480902A
CN114480902A CN202210047780.XA CN202210047780A CN114480902A CN 114480902 A CN114480902 A CN 114480902A CN 202210047780 A CN202210047780 A CN 202210047780A CN 114480902 A CN114480902 A CN 114480902A
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max phase
growth
active
atoms
metal
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CN114480902B (en
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张培根
张倩倩
田志华
唐静雯
李帅
何炜
孙正明
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Southeast University
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/02—Compacting only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/1003—Use of special medium during sintering, e.g. sintering aid
    • B22F3/1007—Atmosphere
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
    • C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
    • C22C29/067—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds comprising a particular metallic binder

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a method for inhibiting the growth of metal whiskers in an MAX phase, which comprises the following steps: (1) mixing the MAX phase with a capture agent of active A atoms; (2) cold-pressing the mixed MAX phase and the capture agent of the active A atoms to form a green body; (3) and sintering the green blank into a sample under a protective atmosphere. According to the invention, through an alloying method, the metal phase captures active A atoms separated from the MAX phase through solid solution, and the atom source for whisker growth is cut off, so that the growth of the A element whisker is effectively inhibited; the sintered sample is polished to simulate the friction and collision conditions in the service process, and the polished MAX phase/metal phase composite material is placed in the high/low temperature and high/low humidity environment, so that no metal whisker grows, and the method has the advantages of wide application range, simple process, greenness, high efficiency and low cost.

Description

Method for inhibiting growth of metal whiskers in MAX phase
Technical Field
The invention relates to a method for inhibiting whisker growth in a material, in particular to a method for inhibiting the growth of metal whiskers in an MAX phase.
Background
The MAX phase is a nano-layered compound with a general formula of Mn+1AXnWherein M is an early transition metal, A is a main group element, X is a C or N element, and N is generally 1 to 4. All MAX phases are M6X octahedron layer and A atomic layer are stacked alternately, and the covalent bond is dominant in MX layer, then is the relatively weak metallic bond between M and the A atom, because unique crystal structure, MAX has the excellent performance of metal and pottery concurrently: low hardness, good thermal conductivity, electrical conductivity, wear resistance, oxidation resistance, corrosion resistance and radiation damage resistance, thus having wide application prospect in a plurality of fields, such as electrical contact materials, heat-resistant materials, radiation-resistant materials and the like.
However, the phenomenon of spontaneous growth of metal whiskers in the MAX phase poses a great challenge to its application. Especially, when the MAX phase material is applied to an electric brush and an electric contact material, friction and collision inevitably occur, so that spontaneous growth of A-site metal whiskers is aggravated, interconnection between contacts is caused by spontaneous growth of the metal whiskers, the possibility of circuit failure is increased, the reliability in MAX phase application is threatened, and the stability of MAX phase is questioned.
At present, methods for inhibiting spontaneous growth of metal whiskers mainly comprise whisker inhibiting strategies such as conformal coatings and isolating layers, and the like, and can inhibit whisker growth to a certain extent, but also have some limitations, such as that the conformal coatings can be punctured by whiskers, the application range of the isolating layers is limited, and the like. These methods cannot fundamentally solve the growth phenomenon of the A site metal whisker.
Disclosure of Invention
The purpose of the invention is as follows: the object of the present invention is to provide a method for fundamentally inhibiting the growth of metal whiskers in the MAX phase by eliminating the active a atoms in the MAX phase.
The technical scheme is as follows: the method for inhibiting the growth of the metal whiskers in the MAX phase comprises the following steps:
(1) mixing the MAX phase with a capture agent of active A atoms;
(2) cold-pressing the mixed MAX phase and the capture agent of the active A atoms to form a green body;
(3) and sintering the green blank into a sample under a protective atmosphere.
Wherein, in the step (1), the capture agent of the active A atoms can form a solid solution or an intermetallic compound with the A element; when a solid solution is formed, the solid solubility of the element a in the scavenger of active a atoms is greater than or equal to 1%.
In the step (1), the element A In the MAX phase is one of Sn, In, Ga, Zn, Cd and Pb; the MAX phase is Ti2SnC、Zr2SnC、Nb2SnC、Lu2SnC、Hf2SnC、Hf2SnN、Ti3SnC2、Ti2InC、Ti2InN、Zr2InC、Zr2InN、Nb2InC、Hf2InC、Sc2InC、Ti3InC2、Ti2GaC、Ti2GaN、V2GaC、V2GaN、Cr2GaC、Gr2GaN、Nb2GaC、Mo2GaC、Ta2GaC、Sc2GaC、Ti3GaC3、Ti2ZnC、Ti2ZnN、V2ZnC、Ti3ZnC2、Ti2CdC；Hf2PbC、Ti2PbC, or Zr2PbC。
In the step (1), when the element A in the MAX phase is Sn, the capture agent of the active atom A is one of Pb, Bi, Ag, Zn, Sb, Cd or Au;
when the element A In the MAX phase is In, the capture agent of the active atom A is one of Pb, Ga, Cd, Ag or Au;
when the element A In the MAX phase is Ga, the capture agent of the active A atoms is one of Sn, In or Ag;
when the element A In the MAX phase is Zn, the capture agent of the active atom A is one of Sn, In or Au;
when the element A in the MAX phase is Cd, the capture agent of the active atom A is Ag;
when the element A In the MAX phase is Pb, the capture agent of the active A atoms is one of Sn, In or Bi.
Wherein, in the step (1), the mol ratio of the MAX phase to the capture agent of the active A atoms is 50:1-2: 1.
In the step (1), the mixing mode is preferably shaking or ball milling mixing.
Wherein, in the step (2), the pressure of the cold press molding is 100-1000 MPa; the pressure maintaining time is 1-100 min.
In the step (3), the protective atmosphere is a reducing atmosphere or vacuum, preferably the reducing atmosphere is hydrogen, argon or nitrogen; the sintering temperature is 30-1000 ℃, and the heat preservation time is 1-48 h.
The technical principle is as follows: the MX layer and the A atomic layer which are combined by covalent bonds in the MAX phase of the layered crystal are combined by relatively weak metal bonds, so that the atoms of the A layer have strong activity and are easy to be separated from the MAX phase under certain conditions such as friction, heating and the like, and whiskers are formed on the surface of the MAX phase. If the active A atoms released by the MAX phase can be captured in time, the element source for whisker growth can be cut off, and the whisker growth can be inhibited. The metal phase is compounded with the MAX phase, and the metal phase is used as a trapping agent of active A atoms, so that the growth of A element whiskers can be effectively inhibited. The invention has wide application range, and has the advantages of simple process, greenness, high efficiency and low cost.
Has the advantages that: compared with the prior art, the invention has the following remarkable effects: (1) by an alloying method, the metal phase captures active A atoms separated from the MAX phase through solid solution, and the atom source for whisker growth is cut off, so that the growth of the A element whisker is effectively inhibited; (2) the sintered sample is polished to simulate the friction and collision conditions in the service process, and the polished MAX phase/metal phase composite material is placed in the environment with high/low temperature and high/low humidity, so that no metal whisker grows; (3) the method is suitable for the MAX phase in which the metal whisker spontaneously grows in the prior art; (4) the method has the advantages of simple process, greenness, high efficiency and low cost.
Drawings
FIG. 1 is a diagram showing the growth of whiskers after 1 year of culture in a high-temperature and high-humidity environment in example 1 of the present invention;
FIG. 2 is a diagram showing the growth of whiskers after 1 year of culture in a high-temperature and high-humidity environment in example 2 of the present invention;
FIG. 3 is a diagram showing the growth of whiskers after 1 year of culture in a high-temperature and high-humidity environment in example 3 of the present invention;
FIG. 4 is a diagram showing the growth of whiskers after 1 year of culture in a high-temperature and high-humidity environment in example 4 of the present invention;
FIG. 5 is a graph showing the growth of whiskers after 5 days of culture in a high-temperature and high-humidity environment in comparative example 1 of the present invention;
FIG. 6 is a graph showing the growth of whiskers in comparative example 2 of the present invention after 5 days of culture in a high-temperature and high-humidity environment;
FIG. 7 is a graph showing the growth of whiskers after 5 days of culture in a high-temperature and high-humidity environment in comparative example 3 of the present invention.
Detailed Description
The present invention is described in further detail below.
Example 1
This example was carried out by preparing Ti2SnC/Bi composite material for inhibiting Ti2The Sn crystal whisker in the SnC grows spontaneously, wherein the metal phase is Bi, and Sn can be effectively dissolved in a solid solution. The method comprises the following specific steps:
(1) 9.5g of Ti were weighed2SnC and 0.5g Bi are filled into a plastic bottle, the sealed plastic bottle is placed into a powder mixer to be uniformly mixed, the rotation speed of the powder mixer is 72r/min, and the powder mixing time is 24 hours;
(2) taking out 5g of the uniformly mixed powder, and carrying out cold press molding under the pressure of 400MPa for 5min to obtain a green body;
(3) and (3) sintering the prepared green body in a tubular furnace under the protective atmosphere of argon at the sintering temperature of 230 ℃ for 2 hours, and then cooling along with the furnace.
Example 2
This example was carried out by preparing Ti2Inhibition of Ti by SnC/Pb composite material2The Sn crystal whisker in the SnC grows spontaneously, wherein the metal phase is Pb, and Sn can be effectively dissolved in the Sn crystal whisker. The method comprises the following specific steps:
(1) 9.2g of Ti were weighed2SnC and 0.8g of Pb are filled into a plastic bottle, the sealed plastic bottle is placed into a powder mixer to be uniformly mixed, the rotating speed of the powder mixer is 72r/min, and the powder mixing time is 24 hours;
(2) taking out 5g of the uniformly mixed powder, and carrying out cold press molding under the pressure of 400MPa for 5min to obtain a green body;
(3) and (3) sintering the prepared green body in a tube furnace under the protection atmosphere of argon at the sintering temperature of 230 ℃ for 2 hours, and then cooling along with the furnace.
Example 3
This example was carried out by preparing Ti2InC/Ga composite material for inhibiting Ti2The In whisker In the InC grows spontaneously, wherein the metal phase is Ga, and In can be effectively dissolved. The method comprises the following specific steps:
(1) weighing 9g of dried Ti2Filling InC and 1g Ga into a plastic bottle, and placing the sealed plastic bottle into a powder mixer to be uniformly mixed, wherein the rotating speed of the powder mixer is 72r/min, and the powder mixing time is 24 h;
(2) taking out 5g of the uniformly mixed powder, and carrying out cold press molding under the pressure of 600MPa for 5min to obtain a green body;
(3) and (3) sintering the prepared green body in a tubular furnace under the protective atmosphere of argon at the sintering temperature of 150 ℃ for 2 hours, and then cooling along with the furnace.
Example 4
This example was carried out by preparing Ti2InC/Ag composite material for inhibiting Ti2The In crystal whisker In the InC grows spontaneously, wherein the metal phase is Ag, and In can be effectively dissolved. The method comprises the following specific steps:
(1) 8.5g of Ti were weighed2Filling InC and 1.5g Ag into a plastic bottle, and placing the sealed plastic bottle into a powder mixer to be uniformly mixed, wherein the rotating speed of the powder mixer is 72r/min, and the powder mixing time is 24 hours;
(2) taking out 5g of the uniformly mixed powder, and carrying out pressure maintaining for 2min at 600MPa to obtain a green blank;
(3) and (3) sintering the prepared green body in a tubular furnace under the protective atmosphere of argon at the sintering temperature of 150 ℃ for 2 hours, and then cooling along with the furnace.
Comparative example 1
The MAX phase prepared in this comparative example is Ti2SnC, free of metallic phases. The method comprises the following specific steps:
(1) mixing 5g of Ti2Cold press molding SnC powder under 400MPa for 5min to obtain a green body;
(2) and (3) sintering the prepared green body in a tubular furnace under the protective atmosphere of argon at the sintering temperature of 230 ℃ for 2 hours, and then cooling along with the furnace.
Comparative example 2
The MAX phase prepared in this comparative example is Ti2InC, no metal phase. The method comprises the following specific steps:
(1) mixing 5g of Ti2Performing cold press molding on InC powder for 2min under the pressure of 600MPa to obtain a green body;
(2) and (3) sintering the prepared green body in a tubular furnace under the protective atmosphere of argon at the sintering temperature of 150 ℃ for 2 hours, and then cooling along with the furnace.
Comparative example 3
Comparative example preparation of Ti2The SnC/Al composite material has Al as the metal phase and is incapable of effectively dissolving Sn in solid solution.
The method comprises the following specific steps:
(1) 9g of Ti were weighed2SnC and 1g of Al are filled into a plastic bottle, the sealed plastic bottle is placed into a powder mixer to be uniformly mixed, the rotating speed of the powder mixer is 72r/min, and the powder mixing time is 24 hours;
(2) taking out 5g of the uniformly mixed powder, and carrying out cold press molding under the pressure of 400MPa for 5min to obtain a green body;
(3) and (3) sintering the prepared green body in a tubular furnace under the protective atmosphere of argon at the sintering temperature of 230 ℃ for 2 hours, and then cooling along with the furnace.
In order to evaluate the inhibition effect of the invention on the growth of the metal whiskers A on the surface of the MAX phase, the samples prepared in each example and comparative example were polished by sand paper and a polishing machine to simulate the mechanical damage during the service process of the MAX phase. And simultaneously placing the polished sample in a high-temperature and high-humidity environment for testing: the temperature is 70 ℃, the relative humidity is 80%, and tests show that the method can effectively inhibit the growth of the metal whiskers A on the surface of the MAX phase.
Fig. 1, fig. 2, fig. 3 and fig. 4 are graphs of the growth of whiskers after the culture of example 1, example 2, example 3 and example 4 in a high-temperature and high-humidity environment for 1 year, respectively, and it can be seen that the surface of the sample is smooth and flat, and no spontaneous growth of whiskers is found. The metal phase captures the active a atoms that are detached from the MAX phase in time, thereby inhibiting whisker growth in the MAX phase.
Fig. 5, 6 and 7 are graphs showing the growth of whiskers after 5 days of culture in high temperature and high humidity environment of comparative example 1, comparative example 2 and comparative example 3, respectively, and it can be seen that a large amount of whiskers grow on the surface of the sample because the mechanical force of the MAX phase generating part chemically decomposes to release active a atoms, and in comparative example 3, although the metal phase is added, the metal phase Al and Sn are not in solid solution, so these active a atoms are not effectively captured and whiskers are formed by surface diffusion.
Therefore, the growth of the whisker can be effectively inhibited by the method.

Claims (10)

1. A method of inhibiting the growth of metal whiskers in a MAX phase, comprising the steps of:
(1) mixing the MAX phase with a capture agent of active A atoms;
(2) cold-pressing the mixed MAX phase and the capture agent of the active A atoms to form a green body;
(3) and sintering the green blank into a sample under a protective atmosphere.
2. A method of suppressing growth of metallic whiskers in a MAX phase as claimed in claim 1, wherein in step (1) the active a atom scavenger is capable of forming a solid solution or intermetallic compound with the a element.
3. The method of suppressing the growth of metal whiskers In the MAX phase of claim 1, wherein In step (1), the a element In the MAX phase is one of Sn, In, Ga, Zn, Cd, or Pb.
4. The method of suppressing the growth of metal whiskers in a MAX phase according to claim 1, characterized in that in step (1), when the a element in the MAX phase is Sn, the scavenger of active a atoms is one of Pb, Bi, Ag, Zn, Sb, Cd or Au.
5. The method of suppressing the growth of metal whiskers In the MAX phase according to claim 1, characterized In that In step (1), when the a element In the MAX phase is In, the capture agent of active a atoms is one of Pb, Ga, Cd, Ag or Au.
6. The method of suppressing the growth of metallic whiskers In a MAX phase of claim 1, wherein In step (1), when the a element In the MAX phase is Ga, the scavenger of active a atoms is one of Sn, In or Ag.
7. A method of inhibiting growth of metal whiskers In a MAX phase according to claim 1, characterized In that In step (1) when the a element In the MAX phase is Zn, the scavenger of active a atoms is one of Sn, In or Au.
8. The method of inhibiting the growth of metal whiskers in a MAX phase of claim 1, wherein in step (1), when the a element in the MAX phase is Cd, the capture agent of active a atoms is Ag.
9. The method of suppressing the growth of metal whiskers In the MAX phase of claim 1, wherein In step (1), when the a element In the MAX phase is Pb, the scavenger of active a atoms is one of Sn, In, or Bi.
10. The method of inhibiting the growth of metal whiskers in a MAX phase of claim 1, wherein in step (1), the molar ratio of the MAX phase to the capture agent of active a atoms is from 50:1 to 2: 1.
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5207958A (en) * 1989-04-09 1993-05-04 Martin Marietta Energy Systems, Inc. Pressureless sintering of whisker-toughened ceramic composites
FR2716208A1 (en) * 1994-02-17 1995-08-18 Aerospatiale Process for producing whiskers or wiskers fibrous, long silicon carbide.
US20050274480A1 (en) * 2004-05-24 2005-12-15 Barsoum Michel W Reduction of spontaneous metal whisker formation
US20100247910A1 (en) * 2006-05-30 2010-09-30 Commissariat L'energie Atomique Phase Powders and Process for Manufacturing Said Powders
CN108611500A (en) * 2018-06-27 2018-10-02 东南大学 A kind of low-melting-point metal method of purification
CN112575367A (en) * 2020-11-05 2021-03-30 南京工程学院 Method for preparing tin whisker with controllable diameter
CN113714680A (en) * 2021-09-29 2021-11-30 南京工程学院 High-potential-concentration MAX phase and preparation method thereof, and lead-free solder capable of effectively inhibiting tin whisker growth and preparation method thereof
CN113816746A (en) * 2021-08-27 2021-12-21 合肥工业大学 MAX-phase high-entropy ceramic matrix composite material and preparation method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5207958A (en) * 1989-04-09 1993-05-04 Martin Marietta Energy Systems, Inc. Pressureless sintering of whisker-toughened ceramic composites
FR2716208A1 (en) * 1994-02-17 1995-08-18 Aerospatiale Process for producing whiskers or wiskers fibrous, long silicon carbide.
US20050274480A1 (en) * 2004-05-24 2005-12-15 Barsoum Michel W Reduction of spontaneous metal whisker formation
US20100247910A1 (en) * 2006-05-30 2010-09-30 Commissariat L'energie Atomique Phase Powders and Process for Manufacturing Said Powders
CN108611500A (en) * 2018-06-27 2018-10-02 东南大学 A kind of low-melting-point metal method of purification
CN112575367A (en) * 2020-11-05 2021-03-30 南京工程学院 Method for preparing tin whisker with controllable diameter
CN113816746A (en) * 2021-08-27 2021-12-21 合肥工业大学 MAX-phase high-entropy ceramic matrix composite material and preparation method thereof
CN113714680A (en) * 2021-09-29 2021-11-30 南京工程学院 High-potential-concentration MAX phase and preparation method thereof, and lead-free solder capable of effectively inhibiting tin whisker growth and preparation method thereof

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHENGJIE LU等: "Isotope study reveals atomic motion mechanism for the formation of metal whiskers in MAX phase", 《ACTA MATERIALIA》 *
丁健翔等: "Ag/Ti2AlC复合材料的电弧侵蚀及退化机理", 《金属学报》 *
刘玉爽: "MAX相中A位金属晶须自发生长机理研究", 《中国博士学位论文全文数据库 工程科技Ⅰ辑》 *
田志华等: "MAX相表面金属晶须自发生长现象的研究现状与展望", 《金属学报》 *

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