CN114471752A - Chip and preparation method thereof - Google Patents
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- CN114471752A CN114471752A CN202011167194.6A CN202011167194A CN114471752A CN 114471752 A CN114471752 A CN 114471752A CN 202011167194 A CN202011167194 A CN 202011167194A CN 114471752 A CN114471752 A CN 114471752A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 239000011521 glass Substances 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 5
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 229910001209 Low-carbon steel Inorganic materials 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims description 3
- 229910001035 Soft ferrite Inorganic materials 0.000 claims description 3
- KCZFLPPCFOHPNI-UHFFFAOYSA-N alumane;iron Chemical compound [AlH3].[Fe] KCZFLPPCFOHPNI-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- XWHPIFXRKKHEKR-UHFFFAOYSA-N iron silicon Chemical compound [Si].[Fe] XWHPIFXRKKHEKR-UHFFFAOYSA-N 0.000 claims description 3
- 229910001004 magnetic alloy Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000011324 bead Substances 0.000 abstract description 34
- 150000007523 nucleic acids Chemical class 0.000 abstract description 12
- 102000039446 nucleic acids Human genes 0.000 abstract description 12
- 108020004707 nucleic acids Proteins 0.000 abstract description 12
- 238000000605 extraction Methods 0.000 abstract description 10
- 238000011084 recovery Methods 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
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- 208000035473 Communicable disease Diseases 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229940079593 drug Drugs 0.000 description 1
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- 238000011068 loading method Methods 0.000 description 1
- 239000006166 lysate Substances 0.000 description 1
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- 239000002122 magnetic nanoparticle Substances 0.000 description 1
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- 239000011325 microbead Substances 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00119—Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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Abstract
Description
技术领域technical field
本申请涉及磁控微流控芯片领域,特别涉及一种芯片及其制备方法。The present application relates to the field of magnetron microfluidic chips, in particular to a chip and a preparation method thereof.
背景技术Background technique
磁性材料作为微珠形状的一种,因其表面积大、良好的磁导向性以及操作性强等特点而被广泛应用于生物分离、靶向载药和核磁共振成像等领域。磁控微流控芯片可用于微流控芯片中液体的混合和运输,芯片的开关和阀门,以及对磁性物体的运输、分离和捕获。As a kind of microbead shape, magnetic materials are widely used in bioseparation, targeted drug loading, and MRI because of their large surface area, good magnetic guidance, and strong operability. The magnetron microfluidic chip can be used for the mixing and transportation of liquids in the microfluidic chip, the switch and valve of the chip, and the transportation, separation and capture of magnetic objects.
分子诊断是以核酸作为检测对象,主要应用于临床各科的诊断中,如肿瘤、感染病、遗传等方面,核酸提取是分子诊断的“第一步”。磁珠是一种基于纳米技术的生物功能材料,它将磁性纳米颗粒包裹成微球,再经过表面处理(生化修饰)以使其能够与各种目标检测物相结合。细胞或组织在裂解液作用下,DNA/RNA被释放出来,与经过修饰的磁珠进行特异性结合,形成“磁珠-核酸复合物”。在外加磁场的作用下,当磁珠溶液以一定流速流经微通道,将受到磁场力的作用,而被吸附捕获。当外部磁场撤出后,磁珠得到释放,重新悬浮在溶液中,实现核酸的分离纯化。Molecular diagnosis uses nucleic acid as the detection object, and is mainly used in the diagnosis of various clinical departments, such as tumors, infectious diseases, genetics, etc. Nucleic acid extraction is the "first step" of molecular diagnosis. Magnetic beads are biofunctional materials based on nanotechnology, which encapsulate magnetic nanoparticles into microspheres, and then undergo surface treatment (biochemical modification) to enable them to bind to various target detection substances. Under the action of the lysate, the DNA/RNA of cells or tissues is released and specifically combined with the modified magnetic beads to form a "magnetic bead-nucleic acid complex". Under the action of an external magnetic field, when the magnetic bead solution flows through the microchannel at a certain flow rate, it will be adsorbed and captured by the force of the magnetic field. When the external magnetic field is withdrawn, the magnetic beads are released and resuspended in the solution to realize the separation and purification of nucleic acids.
目前微流控芯片中磁场产生的方式主要是外置磁铁或集成软磁体,上述方式都是常规永磁铁或电磁铁或软磁体放置在微流控芯片的外部,利用其磁场强度控制磁性粒子,该方法加工工艺简单,成本低,但是集成度低,磁场控制范围有限,对于在核酸提取过程中磁珠的捕获率有一定的限制。因此,如何提高微流控芯片在核酸提取过程中磁珠的捕获率是目前本领域技术人员需要解决的问题。At present, the magnetic field in the microfluidic chip is mainly generated by external magnets or integrated soft magnets. The above methods are all conventional permanent magnets or electromagnets or soft magnets placed outside the microfluidic chip, and the magnetic field strength is used to control the magnetic particles. The method is simple in processing technology and low in cost, but has low integration and a limited range of magnetic field control, which limits the capture rate of magnetic beads during nucleic acid extraction. Therefore, how to improve the capture rate of magnetic beads in the nucleic acid extraction process of the microfluidic chip is a problem that needs to be solved by those skilled in the art.
发明内容SUMMARY OF THE INVENTION
本发明提供了一种芯片,通过将软磁体放置于芯片的内部,从而提高核酸提取过程中磁珠的捕获率,提高实验回收率。The invention provides a chip. By placing a soft magnet inside the chip, the capture rate of magnetic beads in the nucleic acid extraction process is improved, and the experimental recovery rate is improved.
为了达到上述目的,本发明提供一种芯片,包括:In order to achieve the above object, the present invention provides a chip, comprising:
玻璃基板、软磁性金属层以及微流控通道,所述微流控通道与所述玻璃基板键合以使所述软磁性金属层位于所述玻璃基板与所述微流控通道之间。A glass substrate, a soft magnetic metal layer, and a microfluidic channel, the microfluidic channel is bonded to the glass substrate so that the soft magnetic metal layer is located between the glass substrate and the microfluidic channel.
上述芯片,将软磁性金属层设置于玻璃基板与微流控通道之间,当磁珠在微控流通道内移动时,通过施加外部磁场控制磁珠运动,当施加外部磁场时,磁珠被吸附在微控流通道的底部,当撤去外部磁场时,磁珠恢复悬浮的状态,以此方式实现对磁珠的捕获和释放,完成核酸提取实验中物质的分离纯化。由于软磁性金属层位于芯片内部,当施加外部磁场时,能够增强磁场的控制范围,从而增强磁场强度,从而增加磁珠的捕获率。此外,上述芯片的集成式设计可以减少对外部磁场的依赖,从而使得芯片与设备的适配性更高。In the above chip, the soft magnetic metal layer is arranged between the glass substrate and the microfluidic channel. When the magnetic beads move in the microfluidic channel, the movement of the magnetic beads is controlled by applying an external magnetic field. When the external magnetic field is applied, the magnetic beads are adsorbed At the bottom of the micro-controlled flow channel, when the external magnetic field is removed, the magnetic beads return to a suspended state, and in this way, the magnetic beads are captured and released, and the separation and purification of substances in nucleic acid extraction experiments are completed. Since the soft magnetic metal layer is located inside the chip, when an external magnetic field is applied, the control range of the magnetic field can be enhanced, thereby enhancing the magnetic field strength, thereby increasing the capture rate of the magnetic beads. In addition, the integrated design of the above-mentioned chip can reduce the dependence on the external magnetic field, so that the adaptability of the chip and the device is higher.
因此,本发明提供的芯片,通过在玻璃基板和微流控通道之间设置软磁性金属层,提高了核酸提取过程中磁珠的捕获率,提高了实验回收率。Therefore, in the chip provided by the present invention, by arranging a soft magnetic metal layer between the glass substrate and the microfluidic channel, the capture rate of magnetic beads in the nucleic acid extraction process is improved, and the experimental recovery rate is improved.
优选地,还包括位于所述软磁性金属层与所述微流控通道之间的绝缘层。Preferably, an insulating layer is also included between the soft magnetic metal layer and the microfluidic channel.
优选地,还包括位于所述软磁性金属层与所述玻璃基板之间、沿所述玻璃基板到所述软磁性金属层的方向依次设置、与所述软磁性金属层一一对应的钛种子层和铜种子层。Preferably, it also includes titanium seeds located between the soft magnetic metal layer and the glass substrate, sequentially arranged along the direction from the glass substrate to the soft magnetic metal layer, and corresponding to the soft magnetic metal layer one-to-one layer and copper seed layer.
优选地,所述钛种子层的厚度为0.8-1.2um,所述铜种子层的厚度为0.8-1.2um。Preferably, the thickness of the titanium seed layer is 0.8-1.2um, and the thickness of the copper seed layer is 0.8-1.2um.
优选地,沿所述玻璃基板的长度方向,所述流道包括多个依次首尾相连的S形子通道。Preferably, along the length direction of the glass substrate, the flow channel includes a plurality of S-shaped sub-channels connected end to end in sequence.
优选地,所述通道的高度为0.5-3mm。Preferably, the height of the channel is 0.5-3 mm.
优选地,所述软磁性金属层的厚度为50um。Preferably, the thickness of the soft magnetic metal layer is 50um.
优选地,所述软磁性金属层的材料为铁镍合金、纯铁与低碳钢、铁硅系合金、铁铝系合金、软磁铁氧ti3、非晶态软磁合金中的一种。Preferably, the material of the soft magnetic metal layer is one of iron-nickel alloy, pure iron and low carbon steel, iron-silicon alloy, iron-aluminum alloy, soft ferrite ti3, and amorphous soft magnetic alloy.
优选地,本发明还提供一种如上述任一项所述的芯片的制备方法,包括:Preferably, the present invention also provides a method for preparing a chip as described in any of the above, comprising:
在玻璃基板上形成软磁性金属层;forming a soft magnetic metal layer on a glass substrate;
形成微流控通道;form microfluidic channels;
将所述微流控通道与所述玻璃基板键合以使所述软磁性金属层位于所述玻璃基板与所述微流控通道之间。The microfluidic channel is bonded to the glass substrate such that the soft magnetic metal layer is located between the glass substrate and the microfluidic channel.
优选地,所述在玻璃基板上形成软磁性金属层包括:Preferably, the forming the soft magnetic metal layer on the glass substrate comprises:
在玻璃基板上涂覆正光刻胶;Coating positive photoresist on glass substrate;
利用构图工艺对所述正光刻胶进行显影曝光以得到凹陷部,在所述凹陷部内填充软磁性金属材料以形成软磁性金属层;Using a patterning process to develop and expose the positive photoresist to obtain a recessed portion, and fill the recessed portion with a soft magnetic metal material to form a soft magnetic metal layer;
去除剩余的正光刻胶。Remove the remaining positive photoresist.
优选地,去除剩余的正光刻胶之后,还包括在所述软磁性金属层上沉积氧化硅层以形成绝缘层。Preferably, after removing the remaining positive photoresist, the method further includes depositing a silicon oxide layer on the soft magnetic metal layer to form an insulating layer.
优选地,在玻璃基板上涂覆正光刻胶之前,还包括:在所述玻璃基板上依次溅射钛种子层和铜种子层;Preferably, before coating the positive photoresist on the glass substrate, the method further comprises: sequentially sputtering a titanium seed layer and a copper seed layer on the glass substrate;
当去除剩余的正光刻胶时,同时去除与所述正光刻胶对应的钛种子层和铜种子层。When the remaining positive photoresist is removed, the titanium seed layer and the copper seed layer corresponding to the positive photoresist are simultaneously removed.
优选地,所述形成微流控通道包括:Preferably, the forming the microfluidic channel comprises:
在硅片上涂覆SU-8光刻胶;Coating SU-8 photoresist on silicon wafer;
利用构图工艺对所述SU-8光刻胶进行显影曝光以使得所述SU-8光刻胶呈微流控通道的形状;Using a patterning process to develop and expose the SU-8 photoresist so that the SU-8 photoresist is in the shape of a microfluidic channel;
在所述SU-8光刻胶上浇筑PDMS层;Pouring a PDMS layer on the SU-8 photoresist;
去除所述SU-8光刻胶。Remove the SU-8 photoresist.
附图说明Description of drawings
图1为本发明实施例中的芯片的一种膜层结构示意图;1 is a schematic diagram of a film layer structure of a chip in an embodiment of the present invention;
图2为本发明实施例中的芯片的一种工作原理示意图;2 is a schematic diagram of a working principle of a chip in an embodiment of the present invention;
图3为本发明实施例中的芯片的一种结构示意图;3 is a schematic structural diagram of a chip in an embodiment of the present invention;
图4为图3中A方向的一种截面结构示意图;Fig. 4 is a kind of sectional structure schematic diagram of A direction in Fig. 3;
图5为图3中B方向的一种截面结构示意图;Fig. 5 is a kind of sectional structure schematic diagram of B direction in Fig. 3;
图6为本发明实施例中的芯片的制备方法的一种步骤示意图;6 is a schematic diagram of a step of a method for preparing a chip in an embodiment of the present invention;
图7为图6中步骤S100的一种具体的步骤示意图;FIG. 7 is a schematic diagram of a specific step of step S100 in FIG. 6;
图8为图6中步骤S200的一种具体的步骤示意图。FIG. 8 is a schematic diagram of a specific step of step S200 in FIG. 6 .
图中:In the picture:
10-玻璃基板;20-软磁性金属层;30-钛种子层;40-铜种子层;50-绝缘层;60-微流控通道;70-磁珠;80-PDMS。10-glass substrate; 20-soft magnetic metal layer; 30-titanium seed layer; 40-copper seed layer; 50-insulating layer; 60-microfluidic channel; 70-magnetic bead; 80-PDMS.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
请参考图1以及图3-图5,本发明提供了一种芯片,包括:玻璃基板10、软磁性金属层20以及微流控通道60,其中,微流控通道60与玻璃基板10键合以使得软磁性金属层20位于玻璃基板10与微流控通道60之间。Please refer to FIG. 1 and FIGS. 3 to 5 , the present invention provides a chip including: a
上述芯片,如图2所示,将软磁性金属层20设置于玻璃基板10与微流控通道60之间,并通过采用磁控法捕获磁珠70的方法,磁珠70在微控流通道内移动,通过施加外部磁场控制磁珠70运动,当施加外部磁场时,磁珠70被吸附在微控流通道的底部,当撤去外部磁场时,磁珠70恢复悬浮的状态,以此方式实现对磁珠70的捕获和释放,完成核酸提取实验中物质的分离纯化。由于软磁性金属层20位于芯片内部,当施加外部磁场时,能够增强磁场的控制范围,从而增强磁场强度,从而增加磁珠70的捕获率。此外,上述芯片的集成式设计可以减少对外部磁场的依赖,从而使得芯片与设备的适配性更高。In the above chip, as shown in FIG. 2 , the soft
因此,本发明提供的芯片,通过在玻璃基板10和微流控通道60之间设置软磁性金属层20,提高了核酸提取过程中磁珠70的捕获率,提高了实验回收率。Therefore, in the chip provided by the present invention, by arranging the soft
具体的,可继续参考图1,上述芯片还可以包括位于软磁性金属层20与微流控通道60之间的绝缘层50,该绝缘层50可用于保护软磁性金属层20,以保证软磁性金属层20的磁性。需要说明的是,绝缘层50的材料可以是氧化硅,也可以是其他材料。Specifically, referring to FIG. 1, the above-mentioned chip may further include an insulating
进一步地,上述芯片可可以包括位于软磁性金属层20与玻璃基板10之间、沿玻璃基板10到软磁性金属层20的方向依次设置的与软磁性金属层20一一对应的钛种子层30和铜种子层40,通过利用上述钛种子层30以及铜种子层40,能够使得软磁性金属层20更好地与玻璃基板10贴合,以保证芯片在捕获磁珠70的过程用有更好的效果。Further, the above-mentioned chip may include titanium seed layers 30 which are located between the soft
需要说明的是,上述钛种子层30以及铜种子层40的厚度在0.8-1.2um,在保证软磁性金属层20与玻璃基板10贴合的同时,使得芯片的厚度不会太大。其中,作为一种优选的方案,钛种子层30以及铜种子层40的厚度可取值1um。It should be noted that the thicknesses of the
需要说明的是,可参考图3,上述芯片中的微流控通道60在沿磁珠70移动的方向上,长度越长越好,以尽量增加磁珠70在微流控通道60中的移动路程,从而保证更多的磁珠70在施加外部磁场时被捕获到,以完成核酸提取实验中物质的分离纯化。一种实施方案中,上述微流控通道60可以是由沿玻璃基板10的长度方向上多个首尾相连的子通道组合而成,上述微流控通道60的形式极大地增加了磁珠70的移动路程,从而进一步提高了磁珠70的捕获率。It should be noted that, referring to FIG. 3 , the
进一步地,微流控通道60的高度应根据需要捕获的磁珠70的直径来决定,当磁珠70的直径比较大时,微流控通道60相应地也高一点,以便于磁珠70能够顺利在微流控通道60内移动。其中,微流控通道60的高度具体设置在0.5-3mm的范围内。Further, the height of the
一种事实方案中,上述芯片中软磁性金属层20的高度可设置为50um,以保证在施加相应的外部磁场时,软磁性金属层20能够对磁珠70具有足够的磁力,从而使得磁珠70被吸附在微流控通道60的底部。In a factual solution, the height of the soft
需要说明的是,本申请中的芯片中的软磁性金属层20的材料可以是铁镍合金、纯铁与低碳钢、铁硅系合金、铁铝系合金、软磁铁氧ti3、非晶态软磁合金中的一种,且软磁性金属层20的形状可以根据不同要求而做相适应的设置,具有较高的普适性。It should be noted that the material of the soft
基于同一发明思路,本申请还可以提供一种芯片的制备方法,可参考图6,具体包括以下步骤:Based on the same inventive idea, the present application can also provide a method for preparing a chip, please refer to FIG. 6 , which specifically includes the following steps:
S100:在玻璃基板10上形成软磁性金属层20;S100: forming a soft
S200:形成微流控通道60;S200: forming a
S300:将微流控通道60与玻璃基板10键合以使得软磁性金属层20位于玻璃基板10与微流控通道60之间。S300 : Bond the
上述通过在芯片内部形成软磁性金属层20,在施加外部的磁场时,能够提高软磁性金属层20的磁场强度,从而提高对磁珠70的捕获率。此外,通过上述方法制备而成的芯片,还可以减少对外加磁场的依赖,芯片与设备的适配性提高。As described above, by forming the soft
具体地,上述步骤S100中,如图7所示,在玻璃基板10上形成软磁性金属层20可以是包括以下步骤:Specifically, in the above step S100, as shown in FIG. 7, forming the soft
S101:在玻璃基板10上涂覆正光刻胶;S101: coating positive photoresist on the
S102:利用构图工艺对正光刻胶进行显影曝光以得到凹陷部,并在凹陷部内填充软磁性金属材料以形成软磁性金属层20;S102: developing and exposing the positive photoresist by a patterning process to obtain a recessed portion, and filling the recessed portion with a soft magnetic metal material to form the soft
S103:去除剩余的正光刻胶。S103: Remove the remaining positive photoresist.
需要说明的是,上述步骤S101中,在玻璃基板10上涂覆正光刻胶之间,需要对玻璃基板10进行严格的清洗,且玻璃基板10的厚度可以选在0.5mm左右。It should be noted that, in the above step S101, the
具体地,在上述步骤S103完成之后,即在去除剩余的正光刻胶之后,还可以在形成的软磁性金属层20上沉积氧化硅层以形成绝缘层50,以保护软磁性金属层20,沉积氧化硅层时,可通过气相沉积法。Specifically, after the above-mentioned step S103 is completed, that is, after removing the remaining positive photoresist, a silicon oxide layer may also be deposited on the formed soft
进一步地,在上述步骤S101之前,即在玻璃基板10上涂覆正光刻胶之前,还可在玻璃基板10上依次溅射钛种子层30和铜种子层40,并且,在步骤S103,即去除剩余的正光刻胶的时候,同时去除与正光刻胶对应的钛种子层30和铜种子层40。以上述方式形成钛种子层30以及铜种子层40,以使得形成的软磁性金属层20更好地与玻璃基板10贴合。Further, before the above step S101, that is, before coating the positive photoresist on the
具体地,上述步骤S200中,如图8所示,形成微流控通道60可具体包括以下步骤:Specifically, in the above step S200, as shown in FIG. 8, forming the
S201:在硅片上涂覆SU-8光刻胶;S201: Coating SU-8 photoresist on the silicon wafer;
S202:利用构图工艺对SU-8光刻胶进行显影曝光以使得SU-8光刻胶呈微流控通道60的形状;S202: using a patterning process to develop and expose the SU-8 photoresist to make the SU-8 photoresist take the shape of the
S203:在SU-8光刻胶上浇筑PDMS(即聚二甲基硅氧烷)80层;S203: pour 80 layers of PDMS (ie polydimethylsiloxane) on the SU-8 photoresist;
S204:去除SU-光刻胶。S204: Remove the SU-photoresist.
需要说明的是,上述S201步骤,即在硅片上涂覆SU-8光刻胶之前,需要对硅片进行清洗。It should be noted that, in the above step S201, that is, before coating the SU-8 photoresist on the silicon wafer, the silicon wafer needs to be cleaned.
还需要说明的是,上述步骤S300中,在将微流控通道与玻璃基板键合之前,需要将形成的PDMS芯片(即形成的微流控通道)清洗干净,并对表面进行氧等离子体处理。It should also be noted that, in the above step S300, before the microfluidic channel is bonded to the glass substrate, the formed PDMS chip (that is, the formed microfluidic channel) needs to be cleaned, and the surface is subjected to oxygen plasma treatment .
显然,本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present invention without departing from the spirit and scope of the present invention. Thus, provided that these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.
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