CN114464761B - Manufacturing method of organic light-emitting device - Google Patents
Manufacturing method of organic light-emitting device Download PDFInfo
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- CN114464761B CN114464761B CN202210066200.1A CN202210066200A CN114464761B CN 114464761 B CN114464761 B CN 114464761B CN 202210066200 A CN202210066200 A CN 202210066200A CN 114464761 B CN114464761 B CN 114464761B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000032683 aging Effects 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 30
- 229910044991 metal oxide Inorganic materials 0.000 claims description 27
- 150000004706 metal oxides Chemical class 0.000 claims description 26
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 238000012805 post-processing Methods 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 81
- 239000002245 particle Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
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- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Abstract
The present application provides a method for manufacturing an organic light emitting device, comprising: providing a substrate, and forming a thin film transistor on the substrate to obtain an array substrate; forming a light-emitting device layer on the array substrate, wherein the light-emitting device layer comprises an anode, an organic light-emitting layer and a cathode which are sequentially stacked to obtain a display panel; placing the display panel in the aging treatment chamber, introducing repair gas into the aging treatment chamber, and applying voltage between the anode and the cathode to repair a short circuit area in the light-emitting device layer; and sealing the display panel to obtain the organic light-emitting device.
Description
Technical Field
The present application relates to the field of display technologies, and in particular, to a method for manufacturing an organic light emitting device.
Background
In recent years, display devices have been actively developed, and space saving, high brightness, low power consumption, and the like have been demanded. As such a display device, an organic light emitting device using a light emitting device is attracting attention. The organic light emitting device has such characteristics that since it is self-luminous, a viewing angle is wide, a backlight is not required, low power consumption, high response can be achieved, and the thickness of the device is thin. Therefore, application to a large-screen display device such as a television is urgently required.
The light emitting device has an organic light emitting layer including a light emitting layer between an anode and a cathode. The method of driving a light emitting device includes: a simple matrix driving method of controlling on and off of any one of pixels arranged in a matrix form by applying a voltage at an intersection between a selected line and a signal line; and an active matrix driving method of controlling on and off of any one of the pixels arranged in a matrix form by switching elements corresponding to the respective pixels. In the active matrix driving method, an anode is connected to one signal terminal of a TFT (thin film transistor) as a switching element. In the process of manufacturing such an organic light-emitting device, pinholes or the like may be formed in the thin organic light-emitting layer due to minute particles or the like in some cases. Pinholes and the like become areas where electrical short-circuits occur between the anode and the cathode sandwiching the organic light-emitting layer, and all or part of the current to be passed to the organic light-emitting layer is passed to the short-circuited areas. Therefore, a phenomenon occurs in which the light emitting device does not emit light or darkens. Pixels in which this phenomenon occurs are considered display defects.
Therefore, the prior art has defects and needs to be solved urgently.
Disclosure of Invention
The application provides a manufacturing method of an organic light-emitting device, which can solve the technical problems of improving the light-emitting efficiency and the service life of the organic light-emitting device when a short circuit area is repaired before a display panel is packaged.
In order to solve the problems, the technical scheme provided by the application is as follows:
a method of manufacturing an organic light emitting device, comprising:
providing a substrate, and forming a thin film transistor on the substrate to obtain an array substrate;
forming a light-emitting device layer on the array substrate, wherein the light-emitting device layer comprises an anode, an organic light-emitting layer and a cathode which are sequentially stacked to obtain a display panel;
placing the display panel in the aging treatment chamber, introducing repairing gas into the aging treatment chamber, and applying voltage between the anode and the cathode to repair a short circuit area; and
and sealing the display panel to obtain the organic light-emitting device.
In one embodiment of the present application, the light emitting device is a top light emitting structure, and the cathode is made of magnesium or silver.
In one embodiment of the present application, the method further comprises the step of evacuating the aging chamber before introducing the restorative gas into the aging chamber.
In one embodiment of the present application, the prosthetic gas is oxygen, pure air or a mixture of both.
In one embodiment of the present application, the repair gas is a mixed gas of oxygen and pure air, and the flow ratio of the oxygen to the pure air is 2:1.5-3:2, and the humidity range of the purified air is 50-60% rh.
In one embodiment of the application, a reverse voltage of 8V-20V is applied between the anode and cathode, and the duration of the reverse voltage is 12S-18S.
In one embodiment of the present application, after the step of repairing the short-circuited area, before the step of sealing the display panel, the step of removing the metal oxide layer on the surface of the display panel is further included.
In one embodiment of the present application, the method for removing the metal oxide layer on the surface of the display panel includes:
and placing the display panel in the post-processing chamber, and introducing etching gas into the post-processing chamber to remove the metal oxide layer on the surface of the display panel by plasma etching.
In one embodiment of the present application, the pressure value of the post-processing chamber ranges from 20 Pa to 40Pa, and the etching gas used for plasma etching is a mixture gas of hydrogen and nitrogen; the bias power is between 250 and 350 watts; the plasma time is 8-15 seconds.
In one embodiment of the present application, the flow ratio of the introduced hydrogen to the nitrogen is 1:4-1: 2.
The beneficial effects of the application are as follows: according to the manufacturing method of the organic light-emitting device, before the display panel is packaged, the display panel is placed in the aging treatment chamber, the repairing gas is introduced into the aging treatment chamber, and voltage is applied between the anode and the cathode to repair the short-circuit area, so that the display defect of the organic light-emitting device is overcome.
Drawings
The technical solution and other advantageous effects of the present application will be made apparent by the following detailed description of the specific embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic flow chart of a method for manufacturing an organic light emitting device according to a first embodiment of the present application;
FIG. 2 is a cross-sectional view of an organic light-emitting device manufactured by the method of manufacturing an organic light-emitting device provided in FIG. 1;
fig. 3 is a cross-sectional view of an aging treatment chamber used in the method of manufacturing an organic light emitting device provided in fig. 1;
fig. 4 is a cross-sectional view of a post-processing chamber used in the method of manufacturing an organic light emitting device provided in fig. 1;
fig. 5 (a) is a schematic view showing a short circuit caused in an aging process due to the presence of impurity particles in a light emitting device layer of a display panel;
FIG. 5 (B) is a schematic diagram of the structure of the display panel after performing a P-Aging process in vacuum;
fig. 5 (C) is a schematic structural diagram of removing the metal oxide layer of the non-short-circuit region by performing a dry etching process after the P-Aging process.
Description of the reference numerals
100-an organic light emitting device; 1-a substrate; a 2-thin film transistor;
101-a short-circuit region; 103-non-short-circuited area; 7-a thin film encapsulation layer;
3-an array substrate; 30-an active layer; 31-an interlayer insulating layer; 35-a planar layer;
32-gate; 33-a gate insulation layer; 34-a source drain layer; 40-a pixel definition layer;
a 4-light emitting device layer; 41-anode; 42-an organic light emitting layer; 11-a buffer layer;
50-bearing table; 54-an air inlet pipeline; 540—a main pipe; 51-lifting device;
542-branch conduit; 544-control valve; 6-a post-treatment chamber; 56-plasma apparatus;
45-metal oxide layer; 43-cathode; 5-an aging treatment chamber; 52-ageing equipment.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
In the description of the present application, it should be understood that the terms "longitudinal," "transverse," "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," and the like indicate an orientation or a positional relationship based on that shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
The present application may repeat reference numerals and/or letters in the various examples, and this repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Hereinafter, a method of manufacturing the organic light emitting device of the present application will be described in detail with reference to specific embodiments.
Referring to fig. 1 and fig. 2, fig. 1 and fig. 2 are a flow chart and a schematic structure diagram of a manufacturing method of an organic light emitting device 100 according to the present application. The method for manufacturing the organic light emitting device includes the steps of:
s1: providing a substrate 1, and sequentially forming a buffer layer 11 and a thin film transistor 2 on the substrate 1 to obtain an array substrate 3; the formation of the thin film transistor 2 further includes the formation of a signal line driver circuit and a scan line driver circuit.
The thin film transistor 2 includes an active layer 30, an interlayer insulating layer 31 on the surface of the active layer 30, a gate electrode 32 on the surface of the interlayer insulating layer 31, a gate insulating layer 33 on the surface of the gate electrode 32, and a source/drain layer 34 on the surface of the gate insulating layer 33. The source/drain layer 34 includes a source and a drain. The source/drain layer 34 has a planarization layer 35. The array substrate 3 in this embodiment includes a plurality of thin film transistors 2.
S2: a light emitting device layer 4 is formed on the array substrate 3, and the light emitting device layer 4 includes an anode 41, a pixel defining layer 40 covering the anode 41, an organic light emitting layer 42 located in the pixel defining layer 40, and a cathode 43 located on a surface of the pixel defining layer 40, which are sequentially stacked, to obtain a display panel 110. In this embodiment, the light emitting device layer 4 is a top light emitting structure, and the cathode 43 is made of magnesium or silver. That is, the repair method of the present embodiment is preferably directed to a top-emission device. The top emission is that light generated from the organic light emitting layer 42 is emitted not through the substrate glass but through the cathode 43 on the light emitting organic light emitting layer 42, so the anode 41 has a function of a reflective electrode to reflect light generated from the light emitting layer and preferably has a reflectance as high as possible to improve light emitting efficiency; the cathode 43 must be transparent enough to have a relatively high light extraction efficiency. Therefore, the anode 41 has a thickness of, for example, 100nm or more and 1000nm or less, and is made of a single metal element or alloy of silver (Ag), aluminum (Al), chromium (Cr), titanium (Ti), iron (Fe), cobalt (Co), nickel (Ni), molybdenum (Mo), copper (Cu), tantalum (Ta), tungsten (W), platinum (Pt), gold (Au), or the like. The cathode 43 is usually made of Ag, mg or Mg/Ag alloy, which has high light transmittance and good conductivity. But Ag, mg or Mg/Ag alloys are relatively reactive metals and are particularly susceptible to oxidation. The water-oxygen ratio is precisely controlled in the subsequent repair step to ensure that the short-circuited region 101 in the light-emitting device layer 4 can be repaired.
S3: the Aging chamber 5 is evacuated, and then the display panel 110 is placed in the Aging chamber 5, a repair gas is introduced into the Aging chamber 5, and a voltage is applied between the anode 41 and the cathode 43 through a P-Aging (Poison-Aging) process to repair the short-circuited area 101. The reverse voltage of 8V-20V is applied between the anode 41 and the cathode 43, and the duration of the reverse voltage is 12S-18S. Preferably, the duration of the reverse voltage is 15S.
Fig. 3 is a schematic view of an aging treatment chamber 5, and the aging treatment chamber 5 is a chamber that can be evacuated. An Aging device 52 (Aging System) and a bearing table 50 are arranged in the Aging treatment chamber 5, the bearing table 50 is opposite to the Aging device 52, the bearing table 50 is used for bearing and fixing the display panel 110 to be repaired, and in order to avoid interference influence of the Aging device 52 on the display panel 110 caused by the Aging treatment chamber 5, the Aging device 52 can be controlled to be lifted through a lifting device 51. The sidewall of the aging chamber 5 is provided with an air intake pipe 54, the air intake pipe 54 includes a main pipe 540 and a plurality of branch pipes 542 communicated with the main pipe 540, a control valve 544 is provided on the main pipe 540, a control valve 544 is also provided on the branch pipes 542, and the branch pipes 542 can respectively correspond to the mixed repair gas which can be introduced into the aging chamber 5.
When a voltage is applied between the anode 41 and the cathode 43 by the aging device 52, repair can be reliably performed by blowing off or oxidizing and insulating the cathode 43 in which the short-circuited area 101 occurs by means of a self-healing phenomenon.
The repair gas is oxygen, clean Air (CA) or a mixed gas of the oxygen and the clean Air. In this embodiment, the repair gas is a mixed gas of oxygen and pure air, and the flow ratio of the oxygen to the pure air is 2:1.5-3:2, and the humidity range of the purified air is 50-60% rh. The pure air is the impurity particles with the size larger than 0.3um, the quantity of which is smaller than 10 particles/m 3 。
In a preferred embodiment, the flow rate of the oxygen gas is 240 standard cubic centimeters per minute (standard cubic centimeters per minute, sccm) and the flow rate of the purified air gas is 170sccm. The humidity range of the purified air is located at 55% rh. Referring to fig. 5 (a), oxygen is introduced to increase the oxidation rate, so that magnesium or aluminum of the anode 41 is oxidized to form magnesium oxide or aluminum oxide to insulate the short circuit region 101. The pure air is introduced for reducing the cost, and has a certain humidity, so that the oxidation of the metal in the short circuit area 101 can be accelerated, the quick repair of the short circuit area 101 can be realized, and the short circuit area 101 is exposed to the water-oxygen environment for the shortest time possible. In the present embodiment, the metal layer of the non-short circuit region 103 is oxidized although it is exposed to the water-oxygen environment for as short as possible, and the thickness of the metal oxide layer 45 of the short circuit region 101 is greater than that of the oxide layer of the non-short circuit region 103. This is because the existence of the reverse voltage causes the short circuit region 101 to have a large current to pass through, and generates heat and a current breakdown effect, so that the oxidation degree of the short circuit region is greatly improved, and the thickness of the metal oxide layer 45 of the short circuit region 101 is greater than that of the oxide layer of the non-short circuit region 103.
That is, in the manufacturing process of the display panel 110, the aging device 52 needs to perform the lighting test on the pixels with different colors of the display panel 110, so that the pixels are in a certain working state for a period of time to detect the working performance of the pixels. Referring to fig. 5 (a), if the light emitting device layer 4 has impurity particles, the short circuit between the anode 41 and the cathode 43 of the light emitting device layer 4 is very easy to occur during the aging process, and the short circuit area is a dark spot, which affects the quality of the display panel 110, so that the short circuit area 101 needs to be repaired.
In the conventional repair method, the display panel 110 having the light-emitting device layer 4 is placed in an ATM environment, and a predetermined reverse voltage is applied to the cathode 43 and the anode 41 of the light-emitting device layer 4 by the burn-in device 52, so that the conductive property of the cathode 43 in the short-circuit region 101 is oxidized into the nonconductive metal oxide layer 45. However, in the case of the top emission type display device, since the cathode 43 is Ag, mg or Mg/Ag alloy, which is an active metal, in the conventional aging test environment (ATM environment), the cathode 43 is very easily oxidized to cause a metal oxide layer to be formed on the surface of the cathode 43, resulting in a decrease in light transmittance of the display panel 110.
Therefore, in the present embodiment, by improving the aging environment of the top emission display panel 110, the water-oxygen ratio in the aging environment is strictly controlled, so as to repair the short circuit area 101, please refer to fig. 5 (B), and the oxidation degree of the cathode 43 is reduced as much as possible.
S4: referring to fig. 5 (C), the metal oxide layer 45 on the surface of the display panel 110 is removed to increase the light transmittance of the top-emission device, which may also be referred to as a post-processing step after repairing the display panel 110. Since the metal oxide layer 45 is formed in the non-short-circuit region 103, the metal oxide layer 45 greatly affects the light transmittance, and thus the metal oxide layer 45 in the non-short-circuit region 103 needs to be removed after the repair of the short-circuit region 101.
In this embodiment, the oxide layer on the surface of the display panel 110 is removed mainly by dry etching. In this step, it is necessary to precisely control the plasma time to completely remove the metal oxide layer 45 of the non-short region, and since the display panel 110 is exposed to the plasma environment, the surface of the display panel 110 is etched, that is, the metal oxide layer 45 of the short region 101 is also removed at the same time when the metal oxide layer 45 of the non-short region 103 is removed, however, the thickness of the metal oxide layer 45 of the short region 101 is greater than that of the oxide layer of the non-short region 103, and thus, the metal oxide layer 45 of the short region 101 remains partially.
In this embodiment, the method for removing the metal oxide layer 45 includes:
the display panel 110 is placed in the post-processing chamber 6, and etching gas is introduced into the post-processing chamber 6 to remove the oxide layer on the surface of the display panel 110 by plasma etching.
Fig. 4 is a schematic view of the post-processing chamber 6, the post-processing chamber 6 being a vacuum-evacuable chamber. The aging chamber 5 is provided with a plasma device 56 and a carrying table 50, the plasma device 56 is arranged opposite to the carrying table 50, and the carrying table 50 is used for carrying and fixing the display panel 110 to be repaired. The side wall of the post-processing chamber 6 is also provided with an air inlet pipe 54, the air inlet pipe 54 comprises a main pipe 540 and two branch pipes 542 communicated with the main pipe 540, a control valve 544 is arranged on the main pipe 540, the two branch pipes 542 are also provided with control valves 544, and the two branch pipes 542 can respectively and correspondingly introduce mixed etching gas into the post-processing chamber 6.
In this embodiment, the pressure value of the post-processing chamber 6 is 20-40Pa, and the etching gas used for plasma etching is a mixture of hydrogen and nitrogen; bias power (RF) is 250-350 watts; the plasma time is 8-15 seconds. In this embodiment, the flow ratio of the introduced hydrogen to the nitrogen is 1:4-1: 2. Preferably, the flow ratio of hydrogen to nitrogen is at 1:3, for example, the flow rate of the introduced hydrogen gas is 15sccm, and the flow rate of the introduced nitrogen gas is 50sccm.
Referring to table 1 below, the display panel 110 is shown with reference to the following 4 dark spot numbers, luminous efficiencies and lifetimes.
TABLE 1
The condition 1 is data of a display panel in the case of not performing P-Aging, and it can be found that the condition 2 is that the P-Aging process is performed in the ATM, and the number of dark spots is increased because of the existence of impurity particles in the ATM environment, so that the number of dark spots is increased in the ATM environment, and the luminous efficiency and the lifetime are reduced, by taking the condition 1 as a reference standard; the condition 3 is that the P-Aging process is performed in vacuum, and the number of dark spots is reduced when the P-Aging process is not performed, but the luminous efficiency and the service life are reduced; condition 4 is a method adopted in the scheme, and the step of removing the metal oxide layer 45 by performing the P-Aging process first and then performing the post-treatment in vacuum is adopted, so that the number of dark spots is slightly reduced compared with the step of performing the P-Aging process in vacuum, but the luminous efficiency and the service life are both closest to the state when the P-Aging process is not performed, and therefore, the method fully shows that the step of performing the P-Aging first and then performing the post-treatment in vacuum to remove the metal oxide layer 45 can reduce the number of dark spots, can ensure the luminous efficiency and the service life of the display panel, and has the best effect.
S5: the display panel 110 is sealed, and the organic light emitting device 100 is obtained. That is, after the repair of the lighting tester is completed, the display panel 110 needs to be immediately encapsulated, and the thin film encapsulation layer 7 is formed on the surface of the display panel 110 to prevent moisture or oxygen from penetrating along the front surface of the display panel 110. Specifically, the thin film encapsulation layer 7 may include a stacked structure of an inorganic layer, an organic epoxy resin layer, and an inorganic layer that covers the light emitting device layer 4. The thickness of the inorganic layer is 0.75-1.5 um, and the thickness of the organic light emitting layer 42 is 8-12 um.
The beneficial effects of the application are as follows: in summary, in the method for manufacturing the organic light emitting device according to the present application, the display panel 110 is placed in the aging chamber 5 before the display panel 110 is packaged, the predetermined proportion of the repair gas is introduced into the aging chamber 5, and the short circuit area 101 is repaired by strictly controlling the water-oxygen content of the repair gas and applying the reverse voltage between the anode 41 and the cathode 43, so that the display defect of the organic light emitting device 100 is overcome; the repair is followed by removing the metal oxide layer 45 on the surface of the non-short circuit region 103, so as to improve the light passing rate of the organic light emitting device 100, thereby improving the efficiency and the lifetime of the organic light emitting device 100.
In summary, although the present application has been described in terms of the preferred embodiments, the preferred embodiments are not limited to the above embodiments, and various modifications and changes can be made by one skilled in the art without departing from the spirit and scope of the application, and the scope of the application is defined by the appended claims.
Claims (8)
1. A method of manufacturing an organic light emitting device, comprising:
providing a substrate, and forming a thin film transistor on the substrate to obtain an array substrate;
forming a light-emitting device layer on the array substrate, wherein the light-emitting device layer comprises an anode, an organic light-emitting layer and a cathode which are sequentially stacked to obtain a display panel;
placing the display panel in an aging treatment chamber, introducing a preset amount of repairing gas into the aging treatment chamber, and applying a reverse voltage between the anode and the cathode to repair a short-circuit area in the light-emitting device layer;
removing the metal oxide layer on the surface of the display panel; and
sealing the display panel to obtain an organic light-emitting device;
the method for removing the metal oxide layer on the surface of the display panel comprises the following steps:
placing the display panel in a post-processing chamber, and introducing etching gas into the post-processing chamber to remove a metal oxide layer on the surface of the display panel by plasma etching;
the metal oxide layer portion of the shorting region remains when the metal oxide layer of the non-shorting region is removed.
2. The method of manufacturing an organic light-emitting device according to claim 1, wherein the light-emitting device is a top emission structure, and the cathode is made of magnesium or silver.
3. The method of manufacturing an organic light-emitting device according to claim 1, further comprising the step of evacuating the aging chamber before introducing the repair gas into the aging chamber.
4. The method of manufacturing an organic light-emitting device according to claim 1, wherein the repair gas is oxygen, pure air, or a mixed gas of both.
5. The method of manufacturing an organic light-emitting device according to claim 4, wherein the repair gas is a mixed gas of oxygen and clean air, and the flow ratio of the oxygen to the clean air is 2:1.5-3:2, and the humidity range of the purified air is 50-60% rh.
6. The method of manufacturing an organic light-emitting device according to claim 1, wherein a reverse voltage of 8V to 20V is applied between the anode and the cathode, and a duration of the reverse voltage is 12S to 18S.
7. The method of manufacturing an organic light emitting device according to claim 1, wherein the pressure value of the post-processing chamber is in a range of 20 to 40Pa, and the etching gas used for plasma etching is a mixture gas of hydrogen and nitrogen; the bias power is between 250 and 350 watts; the plasma time is 8-15 seconds.
8. The method of manufacturing an organic light-emitting device according to claim 7, wherein a flow ratio of the introduced hydrogen gas to the introduced nitrogen gas is set at 1:4-1: 2.
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