CN114464751B - Perovskite uLED structure and preparation method thereof - Google Patents
Perovskite uLED structure and preparation method thereof Download PDFInfo
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
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Abstract
The invention discloses a perovskite uLED structure and a preparation method thereof. The structure of the invention comprises an anode, a cathode, a perovskite p-type layer, a perovskite light-emitting layer and a perovskite n-type layer. The preparation method comprises the steps of firstly epitaxially growing perovskite crystals around a colloidal quantum dot solution method to form a perovskite luminescent layer, then using the perovskite luminescent layer as a substrate, respectively growing epitaxial layers on the upper end face and the lower end face, and respectively doping the upper epitaxial layer and the lower epitaxial layer into a p-type layer and an n-type layer by introducing metal ions. In the perovskite mu LED device provided by the invention, electrons and holes are transmitted in the perovskite intrinsic layer and are injected into the quantum dots, and electrons and holes of a conventional quantum dot light-emitting diode are injected into the quantum dots through organic ligands, and the interface lattices of the functional layers are not matched, so that the injection efficiency of the perovskite mu LED electrons and holes is greatly improved.
Description
Technical Field
The invention belongs to the field of light emitting diodes, and particularly relates to a perovskite uLED structure and a preparation method thereof.
Background
Light emitting diodes are the most basic lighting units for solid state lighting and flat panel displays. In flat panel display, since the display resolution of an image is high, a large number of light emitting units are required to be combined into a light emitting array. For such a demand of flat panel display, organic Light Emitting Diodes (OLED) and quantum dot light emitting diodes (QLED) have been proposed. In solid state lighting applications, where high light emission intensity from a light source is desired, inorganic Light Emitting Diodes (LEDs) are commonly used.
The structure of a typical OLED is shown in fig. 1. Electrons are injected from the cathode 1 under the electric field of the bias power supply 8, pass through the electron transport layer 2, and reach the light emitting layer 3. The bottom of the transparent anode 6 is provided with a glass substrate 7. Holes are injected from the transparent anode 6 through the hole injection layer 5 and enter the light emitting layer 3 through the hole transport layer 4. In the OLED light-emitting layer 3, electrons and holes are recombined in the organic active material, and visible light is excited.
The device structure and the light emitting mechanism of the QLED are very close to the OLED, except that the organic light emitting active material of the OLED light emitting layer 3 is replaced by quantum dots. Because the quantum dot has the finite field effect and the scale regulation effect, the luminous efficiency of the quantum dot is higher, and the material design is more flexible. However, in both OLED and QLED devices, the functional layers, such as the electron transport layer, the hole transport layer, and the hole injection layer, are made of different types of organic or inorganic materials. The interfaces of the functional layers are not matched with each other, so that a plurality of interface defects exist, and the carrier non-radiative recombination of the interfaces is serious, so that the luminous efficiency is influenced. In addition, in OLED and QLED devices, there are a large number of organic layers that are less resistant to high temperatures, so the maximum brightness produced by QLEDs and OLEDs tends to be limited.
In solid state lighting applications, the brightness of the light emitting diode is required to be high, so LED devices are commonly employed. A typical LED structure is shown in fig. 2. In this structure, first, an n-type semiconductor layer 13 (p-GaN) is grown on a substrate 15 (e.g., sapphire). In order to maintain the lattice matching performance between the n-type semiconductor layer 13 and the substrate 15, a buffer layer 14 is often interposed therebetween. The n-type semiconductor layer 13 is then converted into an n-type layer by doping. In order to improve the light emitting efficiency of an LED, an LED quantum well layer 12 of a periodic structure is generally prepared on an n-type layer, and then a p-type semiconductor layer 11 is prepared thereon and doped into a p-type layer. An IT0 transparent electrode 10 is provided on the p-type semiconductor layer 11. A p-type electrode 9 is prepared on the p-type semiconductor layer 11 and an n-type electrode 16 of the LED is prepared on the n-type semiconductor layer 13. Electrons are injected from the n-type electrode 16 of the LED and holes are injected from the p-type electrode 9 when the LED is in operation. They recombine to emit light at the LED quantum well layers 12. Because the lattice matching of each functional layer in the LED is good, and the crystallization performance of the functional layer is also good, the carrier mobility is high, and the non-radiative recombination of the interface is small. Therefore, the LED has high luminous efficiency and high luminous brightness. However, since the LED light emitting chips are required to be cut, packaged, and heat-dissipated, the individual LEDs are large in size. When arranged in an array, the spacing between LEDs is typically above 1mm, which limits its application to flat panel display devices.
In response to the above problems of LEDs, mini-LEDs and micro-LEDs (μled) have been proposed in recent years. It is generally considered that the mini-LEDs are approximately 100-200 μm in size and micro-LEDs are less than 100 μm in size. While the physical mechanism by which the μled and conventional LEDs emit light does not vary much, the μled presents new challenges to the light emitting unit structure, the light emitting array fabrication technology, and the transfer technology of the light emitting array, as compared to conventional LEDs. Fig. 3 is a typical passive matrix LED array structure in which the light emitting unit is similar to a conventional LED chip, consisting of p-type electrodes 18 of the LED, p-type layers 19 of the LED, quantum well layers 20 of the LED, and n-type layers 21 of the LED. In order to realize a light emitting cell array with a pitch of less than 100 μm, the light emitting cells of these LEDs need to be cut, assembled onto a transparent substrate 24 through an adhesive layer 23, and transparent data electrodes 22 prepared thereon, and LED out through connection electrodes 25. The scan electrode 17 is prepared in a similar manner and the entire light emitting cell array is finally cured in the polymer filling layer 26. Challenges faced by such a LED structure are mainly the reduction in luminous efficiency caused by the smaller light emitting units, and the massive transfer techniques required for the transfer and assembly of massive amounts of light emitting units.
From the above analysis, it can be seen that the emitted brightness of the μled is high, but challenges of mass transfer technology are faced when constructing a large-scale array. OLED and QLED devices can be simply prepared by adopting thin film deposition or ink-jet printing and other technologies, can be well coupled with a drive circuit substrate to form a high-resolution image display array, and are not limited by a mass transfer technology. However, the OLED and QLED have poor interface lattice matching performance and large non-radiative recombination of carriers, so that the light-emitting efficiency is not high enough because most of the functional layers are heterogeneous layers. In addition, since the organic thin film has not high temperature resistance, the light emission luminance of OLED and QLED is limited.
Disclosure of Invention
The invention aims to provide a perovskite uLED structure and a preparation method thereof, which are used for solving the technical problems that the prior mu LED is challenged by a huge transfer technology when a large-scale array is formed, and the luminous efficiency is not high enough and the luminous brightness of the OLED and the QLED is limited because most of functional layers of the OLED and the QLED are heterogeneous layers, the interface lattice matching performance is poor, and the non-radiative recombination of carriers is large.
In order to solve the technical problems, the specific technical scheme of the invention is as follows:
a perovskite uLED structure, comprising an anode, a cathode, a perovskite p-type layer, a perovskite light-emitting layer and a perovskite n-type layer;
the perovskite light-emitting layer comprises colloid quantum dots, perovskite crystals are arranged around the colloid quantum dots to serve as carrier transport channels, the colloid quantum dots and the perovskite crystals have lattice structures with lattice constants matched, and the colloid quantum dot-perovskite composite crystals formed by the colloid quantum dots and the perovskite crystals are used as the perovskite light-emitting layer;
the perovskite p-type layer is arranged at the upper end of the colloid quantum dot-perovskite composite crystal, and the perovskite p-type layer and the colloid quantum dot-perovskite composite crystal have lattice structures with lattice constants matched;
the perovskite n-type layer is arranged at the lower end of the colloid quantum dot-perovskite composite crystal, and the perovskite n-type layer and the colloid quantum dot-perovskite composite crystal have lattice structures with lattice constants matched;
an anode is arranged on the perovskite p-type layer, and a cathode is arranged on the perovskite n-type layer;
under the action of an external power supply, holes are injected from the anode, and electrons are injected from the cathode.
The preparation method of the perovskite uLED structure comprises the following steps:
step 1, synthesizing colloid quantum dots by using a chemical solution method to form colloid quantum dots with inorganic ligands;
step 2, epitaxially growing a perovskite single crystal layer around the colloidal quantum dot solution method, wherein the colloidal quantum dots and the perovskite crystal have lattice matched interfaces to form a colloidal quantum dot-perovskite composite crystal as a perovskite light-emitting layer;
step 3, epitaxially doping and growing a perovskite p-type layer on the upper end face of the colloid quantum dot-perovskite composite crystal, wherein the perovskite p-type layer and the colloid quantum dot-perovskite composite crystal have lattice matched interfaces;
step 4, cutting and polishing the crystal obtained in the step 3 to expose the end face of the colloidal quantum dot-perovskite composite crystal and the end face of the perovskite p-type layer;
step 5, epitaxially doping and growing a perovskite n-type layer on the lower end surface of the colloid quantum dot-perovskite composite crystal, wherein the perovskite n-type layer and the colloid quantum dot-perovskite composite crystal have lattice matched interfaces;
step 6, cutting and polishing the crystal obtained in the step 5 to expose the end face of the perovskite p-type layer and the end face of the perovskite n-type layer;
and 7, arranging an anode on the perovskite p-type layer and arranging a cathode on the end face of the perovskite n-type layer.
Further, the colloidal quantum dots are PbS quantum dots, and the perovskite crystal is MAPbCl 0.5 Br 2.5 And (5) a crystal.
Further, the colloidal quantum dots are prepared by a rapid thermal injection method.
Further, the perovskite epitaxial layer is grown by an inverse temperature method.
Furthermore, the perovskite layer is doped by introducing metal ions, so that the electrical characteristics of the perovskite layer are regulated and controlled.
Further, ag is doped into perovskite crystal + Obtaining a p-type layer, incorporating Bi 3+ An n-type layer is obtained.
Further, in the step 7, a metal layer is deposited on the end surfaces of the perovskite p-type layer and the perovskite n-type layer by a vacuum evaporation or magnetron sputtering method to form an anode and a cathode.
The perovskite uLED structure and the preparation method thereof have the following advantages:
1. the perovskite mu LED provided by the invention has the advantages that the crystal crystallization quality of each functional layer crystal is good, the lattice matching performance of the interface is good, the carrier transport performance is high, and the non-radiative recombination is small, so that the perovskite mu LED has higher luminous efficiency than OLED and QLED, and can provide larger luminous brightness;
2. the perovskite mu LED provided by the invention adopts a solution method to grow perovskite crystals, epitaxial layers and dope at low temperature, and a high-temperature preparation process of an inorganic semiconductor mu LED is not needed, so that the perovskite mu LED can be well coupled with a drive circuit substrate, and the restriction of a huge transfer technology of the inorganic semiconductor mu LED is avoided;
3. compared with inorganic semiconductor mu LED, the perovskite mu LED provided by the invention is prepared at low temperature by a solution method, so that the requirement of a conventional mu LED high-temperature epitaxial crystal layer is avoided.
Drawings
FIG. 1 is a schematic diagram of a conventional OLED structure;
FIG. 2 is a schematic diagram of a conventional LED structure;
FIG. 3 (a) is a schematic cross-sectional view of a conventional inorganic semiconductor mu LED structure;
FIG. 3 (b) is a schematic perspective view of a conventional inorganic semiconductor μLED structure;
FIG. 4 is a schematic diagram of the perovskite μ LED structure of the present invention;
FIG. 5 is a schematic diagram of a perovskite μLED manufacturing flow scheme of the present invention;
the reference numeral 1, the cathode; 2. an electron transport layer; 3. a light emitting layer; 4. a hole transport layer; 5. a hole injection layer; 6. a transparent anode; 7. a glass substrate; 8. a bias power supply; 9. a p-type electrode; 10. an ITO transparent electrode; 11. a p-type semiconductor layer; 12. an LED quantum well layer; 13. an n-type semiconductor layer; 14. a buffer layer; 15. a substrate; 16. an n-type electrode of the LED; 17. a scan electrode; 18. p-type electrode of mu LED; 19. p-type layer of mu LED; 20. mu LED quantum well layer; 21. n-type layer of mu LED; 22. a transparent data electrode; 23. an adhesive layer; 24. a transparent substrate; 25. connecting the electrodes; 26. a polymer filling layer; 27. an anode; 28. a perovskite p-type layer; 29. a perovskite light emitting layer; 30. colloidal quantum dots; 31. a perovskite n-type layer; 32. a cathode; 33. synthesizing colloid quantum dots by a chemical solution method; 34. growing perovskite crystals around quantum dots by a reverse temperature method; 35. epitaxially growing a perovskite p-type layer by a solution method; 36. crystal cutting exposes the end face of the perovskite p-type layer and the end face of the perovskite light-emitting layer; 37. epitaxially growing a perovskite n-type layer by a solution method; 38. crystal cleavage reveals perovskite p-type layer end faces and perovskite n-type layer end faces, 39: an anode and a cathode are deposited.
Detailed Description
For a better understanding of the objects, structures and functions of the present invention, a perovskite uLED structure and a method for preparing the same according to the present invention will be described in further detail with reference to the accompanying drawings.
The perovskite mu LED structure of the invention is shown in figure 4. Comprising an anode 27, a cathode 32, a perovskite p-type layer 28, a perovskite light-emitting layer 29, and a perovskite n-type layer 31;
the perovskite light-emitting layer 29 comprises colloid quantum dots 30, perovskite crystals epitaxially grown around the colloid quantum dots 30 serve as carrier transport channels, the colloid quantum dots 30 and the perovskite crystals have lattice structures with lattice constants matched, and the colloid quantum dots 30-perovskite composite crystals formed by the colloid quantum dots 30 and the perovskite crystals serve as the light-emitting layer 29 of the perovskite mu LED. Wherein the colloidal quantum dot 30-perovskite composite crystal means that the colloidal quantum dot 30 and the perovskite composite crystal form a whole.
The perovskite p-type layer 28 is arranged at the upper end of the colloid quantum dot 30-perovskite composite crystal, and the perovskite p-type layer 28 and the colloid quantum dot 30-perovskite composite crystal have lattice structures with lattice constants matched;
the perovskite n-type layer 31 is arranged at the lower end of the colloid quantum dot 30-perovskite composite crystal, and the perovskite n-type layer 31 and the colloid quantum dot 30-perovskite composite crystal have lattice structures with lattice constants matched;
an anode 27 is provided on the perovskite p-type layer 28, and a cathode 32 is provided on the perovskite n-type layer 31;
holes are injected from the anode 27 and electrons are injected from the cathode 32 under the influence of an externally applied power source.
Electrons are injected from anode 27, holes are injected from cathode 32, electrons enter perovskite light-emitting layer 29 through perovskite p-type layer 28, and holes enter perovskite light-emitting layer 29 through perovskite n-type layer 31.
In the perovskite light-emitting layer 29, colloidal quantum dots 30 are embedded. Since the colloidal quantum dots 30 have excellent photoluminescence and electroluminescence properties, electrons and holes entering the perovskite light-emitting layer 29 are recombined at the colloidal quantum dots 30 to form photon radiation. In the perovskite μled structure, the perovskite p-type layer 28, the perovskite light-emitting layer 29, and the perovskite n-type layer 31 have lattice structures with lattice constants matched, so that the perovskite p-type layer 28-light-emitting layer 29 and the perovskite n-type layer 31-light-emitting layer 29 interface are lattice matched, the interface defect density is low, and the carrier non-radiative recombination is less. In addition, the colloidal quantum dots 30 and the perovskite light-emitting layer 29 have a matched lattice structure, and carriers of the perovskite light-emitting layer 29 can be efficiently injected into the colloidal quantum dots 30. The perovskite μled proposed by the present invention can therefore have higher efficiency and brightness compared to the heterogeneous multilayer structures employed in conventional OLED and QLED.
The preparation method of the perovskite mu LED provided by the invention is shown in figure 5.
The method comprises the following steps:
step 1, synthesizing the colloidal quantum dots 33 by using a chemical solution method, and replacing the organic ligand with the inorganic ligand.
Taking a rapid thermal injection method for preparing PbS quantum dots as an example, the typical preparation process is as follows: will be 0.45g PbI 2 10g of Octadecylamine (ODE) and 14g of Oleic Acid (OA) were mixed in a long-necked flask and heated to 110℃in a vacuum atmosphere and kept for 2 hours to achieve degassing. The solution is then N-charged 2 Heating to 120deg.C under ambient conditions, and stirring thoroughly. The flask was quickly filled with hexamethyldithioalkane TMS solution (210. Mu.L TMS was dissolved in 10mL ODE) and the flask solution was cooled to room temperature. 50ml of acetone was added to the solution, which was a PbS quantum dot precipitate. And then centrifuged at 4000rpm for 3 minutes. The precipitate is treated with acetone and octaneWashed 3 times and redispersed in acetone (10 mg/mL) to obtain a quantum dot solution.
In order to avoid damage to the organic ligands of the quantum dots by the organic-inorganic hybrid perovskite precursor solution, the organic ligands of the quantum dots need to be replaced by inorganic ligands. Typical ligand replacement procedures are: 5mL of PbS QDs oleic acid solution (10 mg/mL) was added to PbI 2 In DMF solution and stirred well. The quantum dots were then transferred from the oleic acid solution to the DMF solution. The oleic acid solution was removed and washed 3 times to remove the organic residue thoroughly. Precipitating the PbS QDs after ligand replacement in toluene, and then drying in vacuum for 20 minutes to obtain the PbS quantum dot powder after ligand replacement.
Step 2, solution epitaxy of perovskite crystals around colloidal quantum dots 30, such as by reverse temperature epitaxy of perovskite crystals 34 around quantum dots. The colloidal quantum dots 30 and perovskite crystals have lattice-matched interfaces. The colloidal quantum dots 30 are prepared by a rapid thermal injection method. The colloidal quantum dots 30 have lattice structures with lattice constants matching that of the epitaxially grown perovskite crystals, e.g., the colloidal quantum dots 30 are PbS quantum dots and the perovskite crystals 34 are mapbecl 0.5 Br 2.5 And (5) a crystal. Having a lattice structure with a lattice constant matching.
And step 3, epitaxially growing a perovskite p-type layer 35 on the upper end surface of the colloidal quantum dot 30-perovskite composite crystal by a solution method, wherein the perovskite p-type layer 28 and the colloidal quantum dot 30-perovskite composite crystal have lattice matched interfaces, so that lattice constants of the perovskite p-type layer and the colloidal quantum dot 30-perovskite composite crystal are required to be similar.
Taking PbS quantum dot as an example, it and MAPbCl 0.5 Br 2.5 The lattice mismatch of the single crystal is less than 3.5%. Typical reverse temperature growth of MAPbCl 0.5 Br 2.5 The process of the PbS colloid quantum dot composite crystal is as follows: lead chloride, lead bromide and methyl ammonium bromide were dissolved in Dimethylformamide (DMF) solution at a molar ratio of 1:3:4 to form a 1mol/L perovskite precursor solution. And weighing the dried PbS QD powder and dispersing the PbS QD powder in the perovskite precursor liquid. Slowly heating the precursor solution from 40 ℃ to 70 ℃, and then preserving the temperature at 70 ℃ for 12 hours to obtain MAPbCl 0.5 Br 2.5 -PbS QDs composite crystals.
Step 4, cutting and polishing the crystal obtained in the step 3, wherein the crystal cutting exposes the end face of the perovskite p-type layer and the end face 36 of the luminescent layer; the end face of the luminescent layer 29 is the end face of the colloidal quantum dot 30-perovskite composite crystal.
For example in MAPbCl 0.5 Br 2.5 Epitaxial perovskite p-type layer on the basis of the PbS QDs composite crystal. As known from the prior art, in MAPbCl 0.5 Br 2.5 Ag is added into perovskite precursor liquid + Its electrical properties can be tailored to be p-type. Thus by doping Ag + A perovskite p-type layer 28 is built.
Step 5, epitaxially growing a perovskite n-type layer 37 on the lower end surface of the colloid quantum dot 30-perovskite composite crystal by a solution method, wherein the perovskite n-type layer 31 and the colloid quantum dot 30-perovskite composite crystal have lattice matched interfaces;
as known from the prior art, in MAPbCl 0.5 Br 2.5 Adding Bi into perovskite precursor liquid 3+ The electrical characteristics thereof can be controlled to be n-type. Thus by doping Bi 3+ A perovskite n-type layer 31 is constructed.
Step 6, cutting and polishing the crystal obtained in the step 5, wherein the crystal cutting exposes the end face of the perovskite p-type layer and the end face 38 of the perovskite n-type layer;
step 7, depositing anode and cathode 39. An anode 27 is provided on the perovskite p-type layer 28, and a cathode 32 is provided on the end face of the perovskite n-type layer 31.
The anode 27 and the cathode 32 are formed by depositing metal layers on the end surfaces of the perovskite p-type layer 28 and the perovskite n-type layer 31 by vacuum evaporation or magnetron sputtering.
It will be understood that the invention has been described in terms of several embodiments, and that various changes and equivalents may be made to these features and embodiments by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (7)
1. The preparation method of the perovskite mu LED structure is characterized by comprising an anode (27), a cathode (32), a perovskite p-type layer (28), a perovskite light-emitting layer (29) and a perovskite n-type layer (31);
the perovskite light-emitting layer (29) comprises colloid quantum dots (30), perovskite crystals are arranged around the colloid quantum dots (30) to serve as carrier transport channels, the colloid quantum dots (30) and the perovskite crystals have lattice structures with lattice constants matched, and the colloid quantum dots (30) -perovskite composite crystals formed by the colloid quantum dots and the perovskite crystals serve as the perovskite light-emitting layer (29);
a perovskite p-type layer (28) is arranged at the upper end of the colloid quantum dot (30) -perovskite composite crystal, and the perovskite p-type layer (28) and the colloid quantum dot (30) -perovskite composite crystal have lattice structures with lattice constants matched;
a perovskite n-type layer (31) is arranged at the lower end of the colloid quantum dot (30) -perovskite composite crystal, and the perovskite n-type layer (31) and the colloid quantum dot (30) -perovskite composite crystal have lattice structures with lattice constants matched;
an anode (27) is provided on the perovskite p-type layer (28), and a cathode (32) is provided on the perovskite n-type layer (31); under the action of an external power supply, holes are injected from the anode (27), and electrons are injected from the cathode (32);
the preparation method of the perovskite mu LED structure comprises the following steps:
step 1, synthesizing colloidal quantum dots (30) by using a chemical solution method to form the colloidal quantum dots (30) with inorganic ligands;
step 2, epitaxially growing perovskite crystals around the colloidal quantum dots (30) by a solution method, wherein the colloidal quantum dots (30) and the perovskite crystals have lattice-matched interfaces to form a colloidal quantum dot (30) -perovskite composite crystal as a perovskite luminescent layer (29);
step 3, epitaxially doping and growing a perovskite p-type layer (28) on the upper end face of the colloid quantum dot (30) -perovskite composite crystal, wherein the perovskite p-type layer (28) and the colloid quantum dot (30) -perovskite composite crystal have lattice matched interfaces;
step 4, cutting and polishing the crystal obtained in the step 3 to expose the end face of the colloid quantum dot (30) -perovskite composite crystal and the end face of the perovskite p-type layer (28);
step 5, epitaxially doping and growing a perovskite n-type layer (31) on the lower end surface of the colloid quantum dot (30) -perovskite composite crystal, wherein the perovskite n-type layer (31) and the colloid quantum dot (30) -perovskite composite crystal have lattice matched interfaces;
step 6, cutting and polishing the crystal obtained in the step 5 to expose the end face of the perovskite p-type layer (28) and the end face of the perovskite n-type layer (31);
and 7, arranging an anode (27) on the perovskite p-type layer (28), and arranging a cathode (32) on the end face of the perovskite n-type layer (31).
2. The method of manufacturing a perovskite μled structure according to claim 1, characterized in that the colloidal quantum dots (30) are PbS quantum dots and the perovskite crystal is MAPbCl 0.5 Br 2.5 And (5) a crystal.
3. The method of manufacturing a perovskite μled structure according to claim 1, characterized in that the colloidal quantum dots (30) are manufactured by a rapid thermal injection method.
4. A method of fabricating a perovskite μled structure according to claim 1, wherein the perovskite epitaxial layer is grown by an inverse temperature process.
5. The method for preparing a perovskite μled structure according to claim 1, wherein the electrical properties of the perovskite layer are controlled by doping the perovskite layer with metal ions.
6. The method of preparing a perovskite LED structure according to claim 5, wherein Ag is incorporated into perovskite crystals + Obtaining a p-type layer, incorporating Bi 3+ An n-type layer is obtained.
7. The method of fabricating a perovskite LED structure according to claim 6, wherein the metal layer is deposited on the end surfaces of the perovskite p-type layer (28) and the perovskite n-type layer (31) by vacuum evaporation or magnetron sputtering in step 7, thereby forming an anode (27) and a cathode (32).
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| CN107369774A (en) * | 2017-07-12 | 2017-11-21 | 华南师范大学 | A kind of compound MQW LED of perovskite and preparation method thereof |
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| WO2020069729A1 (en) * | 2018-10-02 | 2020-04-09 | Toyota Motor Europe | Method for preparing quantum-dot-in-layered-perovskite heterostructured energy funnels |
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