CN114464751A - Perovskite uLED structure and preparation method thereof - Google Patents
Perovskite uLED structure and preparation method thereof Download PDFInfo
- Publication number
- CN114464751A CN114464751A CN202210146756.1A CN202210146756A CN114464751A CN 114464751 A CN114464751 A CN 114464751A CN 202210146756 A CN202210146756 A CN 202210146756A CN 114464751 A CN114464751 A CN 114464751A
- Authority
- CN
- China
- Prior art keywords
- perovskite
- type layer
- layer
- quantum dots
- quantum dot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 81
- 239000002096 quantum dot Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000000243 solution Substances 0.000 claims abstract description 29
- 238000002347 injection Methods 0.000 claims abstract description 8
- 239000007924 injection Substances 0.000 claims abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 3
- 239000002131 composite material Substances 0.000 claims description 37
- 239000000084 colloidal system Substances 0.000 claims description 19
- 238000005520 cutting process Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 claims description 6
- 239000003446 ligand Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 4
- 230000002194 synthesizing effect Effects 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000007738 vacuum evaporation Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 139
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000002346 layers by function Substances 0.000 abstract description 7
- 239000013110 organic ligand Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 14
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-dimethylformamide Substances CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 5
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 5
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 5
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 5
- 239000005642 Oleic acid Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 5
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- SSWPUHUQUBKABU-UHFFFAOYSA-N CSS(C)(C)(C)(C)C Chemical compound CSS(C)(C)(C)(C)C SSWPUHUQUBKABU-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- ISWNAMNOYHCTSB-UHFFFAOYSA-N methanamine;hydrobromide Chemical compound [Br-].[NH3+]C ISWNAMNOYHCTSB-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a perovskite uLED structure and a preparation method thereof. The structure of the invention comprises an anode, a cathode, a perovskite p-type layer, a perovskite luminous layer and a perovskite n-type layer. The preparation method comprises the steps of firstly, carrying out epitaxial growth on perovskite crystals around a colloidal quantum dot solution method to form a perovskite light emitting layer, then using the perovskite light emitting layer as a substrate, respectively growing epitaxial layers on the upper end face and the lower end face of the perovskite light emitting layer, and respectively doping the upper epitaxial layer and the lower epitaxial layer into a p-type layer and an n-type layer by introducing metal ions. In the perovskite mu LED device provided by the invention, electrons and holes are transmitted and injected into quantum dots in the perovskite intrinsic layer, while electrons and holes of the conventional quantum dot light-emitting diode are injected into the quantum dots through the organic ligand, and the crystal lattices of the interface of the functional layer are not matched, so that the injection efficiency of the electrons and holes of the perovskite mu LED is greatly improved.
Description
Technical Field
The invention belongs to the field of light emitting diodes, and particularly relates to a perovskite uLED structure and a preparation method thereof.
Background
Light emitting diodes are the most basic lighting units for solid state lighting and flat panel displays. In flat panel display, since the display resolution of an image is high, a large number of light emitting elements are required to be combined into a light emitting array. In response to such a demand for flat panel displays, Organic Light Emitting Diodes (OLEDs) and quantum dot light emitting diodes (QLEDs) have been proposed. In solid state lighting applications, where high light emission brightness is required for the light source, inorganic Light Emitting Diodes (LEDs) are commonly used.
The structure of a typical OLED is shown in fig. 1. Under the action of an electric field of the bias power supply 8, electrons are injected from the cathode 1, pass through the electron transport layer 2, and reach the light emitting layer 3. The bottom of the transparent anode 6 is provided with a glass substrate 7. Holes are injected from the transparent anode 6 through the hole injection layer 5 and enter the light-emitting layer 3 through the hole transport layer 4. In the OLED light-emitting layer 3, electrons and holes recombine in the organic active material, exciting visible light.
The device structure and the light emitting mechanism of the QLED are very close to the OLED, except that the organic light emitting active material of the OLED light emitting layer 3 is replaced with quantum dots. The quantum dot has the advantages of high luminous efficiency and more flexible material design because of the domain-limiting effect and the scale control effect. However, in the OLED and QLED devices, functional layers such as an electron transport layer, a hole transport layer, and a hole injection layer are made of different kinds of organic or inorganic materials. The interfaces of the functional layers are not matched with each other, so that a plurality of interface defects exist, the non-radiative recombination of carriers of the interfaces is serious, and the luminous efficiency is influenced. In addition, in OLED and QLED devices, there are a large number of organic layers that are less temperature tolerant to high temperatures, so the maximum brightness produced by QLEDs and OLEDs is often limited.
In solid state lighting applications, the brightness of the light emitting diode is required to be high, so LED devices are commonly used. A typical LED structure is shown in fig. 2. In this structure, an n-type semiconductor layer 13(p-GaN) is first grown on a substrate 15, such as sapphire. In order to maintain lattice matching performance between the n-type semiconductor layer 13 and the substrate 15, a buffer layer 14 is often interposed therebetween. The n-type semiconductor layer 13 is then converted to an n-type layer by doping. In order to improve the light emitting efficiency of the LED, the LED quantum well layer 12 with a periodic structure is usually prepared on the n-type layer, and then the p-type semiconductor layer 11 is prepared thereon and doped to become the p-type layer. An IT0 transparent electrode 10 is provided on the p-type semiconductor layer 11. A p-type electrode 9 is prepared on the p-type semiconductor layer 11, and an n-type electrode 16 of the LED is prepared on the n-type semiconductor layer 13. When the LED is operated, electrons are injected from the n-type electrode 16 of the LED, and holes are injected from the p-type electrode 9. They recombine to emit light in the LED quantum well layer 12. Because each functional layer in the LED has better lattice matching and good crystallization performance, the carrier mobility is high, and the non-radiative recombination of the interface is very small. Therefore, the LED has high luminous efficiency and strong luminous brightness. However, because the LED light emitting chip needs to be cut, packaged and heat dissipated, the size of a single LED is large. When arranged in an array, the spacing between LEDs is typically above 1mm, which limits their application to flat panel display devices.
In order to solve the above problems of the LED, a mini-LED and a micro-LED (μ LED) structure have been proposed in recent years. It is generally considered that the mini-LED has a size of about 100 to 200 μm and the micro-LED has a size of less than 100 μm. Although the physical mechanism of light emission of the μ LED and the conventional LED is not changed much, the μ LED brings new challenges to the structure of the light emitting unit, the fabrication technology of the light emitting array, the transfer technology of the light emitting array, and the like, compared with the conventional LED. Fig. 3 is a typical passive matrix mu LED array structure in which the light emitting unit is composed of a p-type electrode 18 of a mu LED, a p-type layer 19 of a mu LED, a quantum well layer 20 of a mu LED, and an n-type layer 21 of a mu LED, similar to a conventional LED chip. In order to realize a light emitting cell array having a pitch of less than 100 μm, the light emitting cells of these LEDs need to be cut, assembled onto a transparent substrate 24 through an adhesive layer 23, and a transparent data electrode 22 is prepared thereon and LED out through a connection electrode 25. In a similar manner to prepare the scan electrode 17, the entire light emitting cell array is finally cured in the polymer filling layer 26. The challenges facing such a μ LED structure are mainly the reduction of light emitting efficiency caused by the miniaturization of light emitting units, and the enormous amount of transfer techniques required for the transfer and assembly of a large number of light emitting units.
As can be seen from the above analysis, the light emission luminance of the μ LED is high, but faces the challenge of a massive transfer technique in constructing a large-scale array. The OLED and the QLED can be simply prepared by adopting the technologies of thin film deposition or ink-jet printing and the like, can be well coupled with a driving circuit substrate to form a high-resolution image display array, and is not limited by a mass transfer technology. However, most functional layers of the OLED and the QLED are heterogeneous layers, so that the interface lattice matching performance is poor, and non-radiative recombination of carriers is large, so that the luminous efficiency is not high enough. In addition, since the organic thin film has low temperature resistance, the emission luminance of the OLED and the QLED is limited.
Disclosure of Invention
The invention aims to provide a perovskite uLED structure and a preparation method thereof, and aims to solve the technical problems that the existing mu LED faces huge challenges of transfer technology when forming a large-scale array, and OLED and QLED have low luminous efficiency and limited luminous brightness of OLED and QLED due to the fact that most functional layers are heterogeneous layers, interface lattice matching performance is poor, and non-radiative recombination of carriers is large.
In order to solve the technical problems, the specific technical scheme of the invention is as follows:
a perovskite uLED structure comprises an anode, a cathode, a perovskite p-type layer, a perovskite luminous layer and a perovskite n-type layer;
the perovskite luminescent layer comprises colloid quantum dots, perovskite crystals are arranged around the colloid quantum dots to serve as carrier transport channels, the colloid quantum dots and the perovskite crystals have lattice structures with matched lattice constants, and colloid quantum dot-perovskite composite crystals formed by the colloid quantum dots and the perovskite crystals serve as the perovskite luminescent layer;
a perovskite p-type layer is arranged at the upper end of the colloid quantum dot-perovskite composite crystal, and the perovskite p-type layer and the colloid quantum dot-perovskite composite crystal have lattice structures matched with lattice constants;
a perovskite n-type layer is arranged at the lower end of the colloid quantum dot-perovskite composite crystal, and the perovskite n-type layer and the colloid quantum dot-perovskite composite crystal have lattice structures matched with lattice constants;
an anode is arranged on the perovskite p-type layer, and a cathode is arranged on the perovskite n-type layer;
and a p electrode and an n electrode are respectively arranged on the perovskite n-type layer, and under the action of an external power supply, holes are injected from the anode, and electrons are injected from the cathode.
A preparation method of a perovskite uLED structure comprises the following steps:
and 7, arranging an anode on the p-type layer of the perovskite and arranging a cathode on the end face of the n-type layer of the perovskite.
Further, the colloidal quantum dots are PbS quantum dots, and the perovskite crystals are MAPbCl0.5Br2.5And (4) crystals.
Further, the colloidal quantum dots are prepared by a rapid hot injection method.
Further, perovskite epitaxial layers are grown by an inverse temperature method.
Furthermore, the electrical characteristics of the perovskite layer are regulated and controlled by introducing metal ions to dope the perovskite layer.
Further, doping perovskite crystal with Ag+Obtaining a p-type layer doped with Bi3+An n-type layer is obtained.
Furthermore, in the step 7, metal layers are deposited on the end faces of the perovskite p-type layer and the perovskite n-type layer by a vacuum evaporation or magnetron sputtering method to form an anode and a cathode.
The perovskite uLED structure and the preparation method thereof have the following advantages:
1. the perovskite mu LED provided by the invention has the advantages that the crystal quality of each functional layer is good, the lattice matching performance of the interface is good, the carrier transport performance is high, and the non-radiative recombination is small, so that the perovskite mu LED has higher luminous efficiency than an OLED and a QLED, and can provide higher luminous brightness;
2. the perovskite mu LED provided by the invention adopts a solution method to grow perovskite crystals, epitaxial layers and doping at low temperature, and a high-temperature preparation process of the inorganic semiconductor mu LED is not needed, so that the perovskite mu LED can be well coupled with a driving circuit substrate, and the restriction of a huge transfer technology of the inorganic semiconductor mu LED is avoided;
3. compared with an inorganic semiconductor mu LED, the perovskite mu LED only needs to be prepared at low temperature by adopting a solution method, the requirement of a conventional mu LED high-temperature epitaxial crystal layer is avoided, the perovskite mu LED provided by the invention has a simple preparation process and lower cost.
Drawings
FIG. 1 is a schematic diagram of a conventional OLED structure;
FIG. 2 is a schematic diagram of a conventional LED structure;
FIG. 3(a) is a schematic cross-sectional view of a conventional inorganic semiconductor μ LED structure;
FIG. 3(b) is a schematic perspective view of a conventional inorganic semiconductor μ LED structure;
FIG. 4 is a schematic diagram of a perovskite μ LED structure of the present invention;
FIG. 5 is a schematic diagram of a perovskite μ LED fabrication process of the present invention;
Detailed Description
In order to better understand the purpose, structure and function of the present invention, a perovskite uuled structure and a method for manufacturing the same according to the present invention are further described in detail below with reference to the accompanying drawings.
The perovskite mu LED structure of the invention is shown in figure 4. Comprises an anode 27, a cathode 32, a perovskite p-type layer 28, a perovskite luminescent layer 29 and a perovskite n-type layer 31;
the perovskite luminescent layer 29 comprises colloidal quantum dots 30, perovskite crystals which grow around the colloidal quantum dots 30 in a solution epitaxial mode are used as carrier transport channels, the colloidal quantum dots 30 and the perovskite crystals have lattice structures with matched lattice constants, and the colloidal quantum dots 30-perovskite composite crystals which are formed by the colloidal quantum dots 30 and the perovskite crystals are used as the luminescent layer 29 of the perovskite mu LED. Wherein the colloidal quantum dot 30-perovskite composite crystal means that the colloidal quantum dot 30 and the perovskite composite crystal form a whole.
A perovskite p-type layer 28 is arranged at the upper end of the colloidal quantum dot 30-perovskite composite crystal, and the perovskite p-type layer 28 and the colloidal quantum dot 30-perovskite composite crystal have lattice structures with matched lattice constants;
a perovskite n-type layer 31 is arranged at the lower end of the colloidal quantum dot 30-perovskite composite crystal, and the perovskite n-type layer 31 and the colloidal quantum dot 30-perovskite composite crystal have lattice structures with matched lattice constants;
an anode 27 provided on the perovskite p-type layer 28 and a cathode 32 provided on the perovskite n-type layer 31;
and a p-electrode and an n-electrode are provided on the perovskite n-type layer 31, respectively, and holes are injected from the anode 27 and electrons are injected from the cathode 32 by an external power supply.
Electrons are injected from the anode 27, holes are injected from the cathode 32, electrons enter the perovskite light-emitting layer 29 through the perovskite p-type layer 28, and holes enter the perovskite light-emitting layer 29 through the perovskite n-type layer 31.
In the perovskite light emitting layer 29, colloidal quantum dots 30 are embedded. Since the colloidal quantum dots 30 have excellent photoluminescence and electroluminescence properties, electrons and holes entering the perovskite luminescent layer 29 recombine at the colloidal quantum dots 30 to form photon radiation. In the perovskite mu LED structure, the perovskite p-type layer 28, the perovskite luminous layer 29 and the perovskite n-type layer 31 have lattice structures with matched lattice constants, so that the perovskite p-type layer 28-luminous layer 29 and the perovskite n-type layer 31-luminous layer 29 are in lattice matching with each other at the interface, the interface defect density is low, and the non-radiative recombination of carriers is less. Further, the colloidal quantum dots 30 and the perovskite light-emitting layer 29 also have a lattice structure matching each other, and carriers in the perovskite light-emitting layer 29 can be efficiently injected into the colloidal quantum dots 30. The perovskite μ LEDs proposed by the present invention may therefore have higher efficiency and brightness compared to the heterogeneous multilayer structures employed in conventional OLEDs and QLEDs.
The perovskite mu LED preparation method provided by the invention is shown in figure 5.
The method comprises the following steps:
Taking the rapid thermal injection method for preparing the PbS quantum dots as an example, the typical preparation process is as follows: 0.45g of PbI210g of Octadecylamine (ODE) and 14g of Oleic Acid (OA) are mixed and placed in a long-neck flask, and the mixture is heated to 110 ℃ in a vacuum environment and is kept for 2 hours to achieve the aim of degassing. Then filling the solution with N2Heating to 120 deg.C under environment, and stirring. Hexamethyldisulfane TMS solution was rapidly injected into the flask (210 μ L TMS dissolved in 10mL ODE) and the flask solution was cooled to room temperature. 50ml of acetone was added to the solution to precipitate PbS quantum dots. Then centrifuged at 4000rpm for 3 minutes. The precipitate was washed 3 times with acetone and octane, and redispersed in acetone (10mg/mL) to obtain a quantum dot solution.
In order to avoid the destruction of organic ligands of quantum dots by organic-inorganic hybrid perovskite precursor liquid, the organic ligands of the quantum dots need to be replaced by inorganic ligands. Typical ligand replacement procedures are: 5mL of PbS QDs oleic acid solution (10mg/mL) was added to PbI2DMF solution and stirring well. The quantum dots were then transferred from the oleic acid solution to the DMF solution. The oleic acid solution was removed and washed 3 times to remove the organic residue sufficiently. Precipitating the PbS QDs substituted by the ligand in toluene, and then drying for 20 minutes in vacuum to obtain PbS quantum dot powder substituted by the ligand.
And 3, epitaxially growing a perovskite p-type layer 35 on the upper end face of the colloidal quantum dot 30-perovskite composite crystal by a solution method, wherein the perovskite p-type layer 30 and the colloidal quantum dot 30-perovskite composite crystal have lattice-matched interfaces, so that the lattice constants of the perovskite p-type layer and the colloidal quantum dot 30-perovskite composite crystal are required to be close.
Taking PbS quantum dots as an example, it is mixed with MAPbCl0.5Br2.5The lattice mismatch of the single crystal is less than 3.5%. Typical inverse temperature growth MAPbCl0.5Br2.5-the PbS colloidal quantum dot composite crystal process is as follows: lead chloride, lead bromide and methyl ammonium bromide are dissolved in dimethyl formamide (DMF) solution according to a molar ratio of 1:3:4 to form 1mol/L perovskite precursor solution. And weighing the dried PbS QD powder and dispersing the powder in the perovskite precursor liquid. The precursor solution is slowly heated from 40 ℃ to 70 ℃, and then the temperature is kept at 70 ℃ for 12 hours to obtain MAPbCl0.5Br2.5-PbS QDs complex crystals.
For example in MAPbCl0.5Br2.5Epitaxial perovskite p-type layer on the basis of-PbS QDs composite crystal. According to the prior knowledge, in MAPbCl0.5Br2.5Adding Ag into the perovskite precursor solution+Its electrical properties can be tuned to p-type. Thus by doping with Ag+A perovskite p-type layer 28 is constructed.
according to the prior knowledge, in MAPbCl0.5Br2.5Adding Bi into the perovskite precursor liquid3+The electrical characteristics of the material can be adjusted to be n-type. Thus by doping with Bi3+A perovskite n-type layer 31 is constructed.
The anode 27 and the cathode 32 are formed by depositing metal layers on the end faces of the perovskite p-type layer 28 and the perovskite n-type layer 31 by vacuum evaporation or magnetron sputtering.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes in the features and embodiments, or equivalent substitutions may be made therein by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (8)
1. A perovskite uLED structure, comprising an anode (27), a cathode (32), a perovskite p-type layer (28), a perovskite light emitting layer (29), a perovskite n-type layer (31);
the perovskite luminescent layer (29) comprises colloid quantum dots (30), perovskite crystals are arranged around the colloid quantum dots (30) to serve as carrier transport channels, the colloid quantum dots (30) and the perovskite crystals have lattice structures matched with lattice constants, and colloid quantum dots (30) -perovskite composite crystals formed by the colloid quantum dots and the perovskite crystals serve as the perovskite luminescent layer (29);
a perovskite p-type layer (28) is arranged at the upper end of the colloid quantum dot (30) -perovskite composite crystal, and the perovskite p-type layer (28) and the colloid quantum dot (30) -perovskite composite crystal have lattice structures with matched lattice constants;
a perovskite n-type layer (31) is arranged at the lower end of the colloid quantum dot (30) -perovskite composite crystal, and the perovskite n-type layer (31) and the colloid quantum dot (30) -perovskite composite crystal have lattice structures matched with lattice constants;
an anode (27) is provided on the perovskite p-type layer (28), and a cathode (32) is provided on the perovskite n-type layer (31);
and a p-electrode and an n-electrode are provided on the perovskite n-type layer (31), respectively, and holes are injected from the anode (27) and electrons are injected from the cathode (32) by an external power supply.
2. The method of manufacturing a perovskite uLED structure according to claim 1, comprising the steps of:
step 1, synthesizing colloidal quantum dots (30) by using a chemical solution method to form the colloidal quantum dots (30) with inorganic ligands;
step 2, carrying out epitaxial growth of perovskite crystals around the colloidal quantum dots (30) by a solution method, wherein the colloidal quantum dots (30) and the perovskite crystals have lattice-matched interfaces to form colloidal quantum dots (30) -perovskite composite crystals as perovskite light-emitting layers (29);
step 3, extending and doping to grow a perovskite p-type layer (28) on the upper end surface of the colloidal quantum dot (30) -perovskite composite crystal, wherein the perovskite p-type layer (28) and the colloidal quantum dot (30) -perovskite composite crystal have lattice-matched interfaces;
step 4, cutting and polishing the crystal obtained in the step 3 to expose the end face of the colloidal quantum dot (30) -perovskite composite crystal and the end face of the perovskite p-type layer (28);
step 5, extending and doping a perovskite n-type layer (31) on the lower end surface of the colloidal quantum dot (30) -perovskite composite crystal, wherein the perovskite n-type layer (31) and the colloidal quantum dot (30) -perovskite composite crystal have lattice-matched interfaces;
step 6, cutting and polishing the crystal obtained in the step 5 to expose the end face of the perovskite p-type layer (28) and the end face of the perovskite n-type layer (31);
and 7, arranging an anode (27) on the perovskite p-type layer (28) and arranging a cathode (32) on the end face of the perovskite n-type layer (31).
3. The method of manufacturing a perovskite uLED structure according to claim 2, wherein the colloidal quantum dots (30) are PbS quantum dots and the perovskite crystals are MAPbCl0.5Br2.5And (4) crystals.
4. Method for producing a perovskite uuled structure according to claim 2, characterized in that the colloidal quantum dots (30) are produced by a rapid thermal injection method.
5. The method of manufacturing a perovskite uuled structure according to claim 2, characterized in that the perovskite epitaxial layer is grown by an inverse temperature method.
6. The method of manufacturing a perovskite uLED structure according to claim 2, wherein the electrical properties of the perovskite layer are controlled by introducing metal ions to dope the perovskite layer.
7. The method of making a perovskite uLED structure according to claim 6, wherein Ag is doped into the perovskite crystals+Obtaining a p-type layer doped with Bi3+An n-type layer is obtained.
8. The method for preparing a perovskite uLED structure according to claim 7, wherein in the step 7, metal layers are deposited on the end faces of the perovskite p-type layer (28) and the perovskite n-type layer (31) by a vacuum evaporation or magnetron sputtering method to form an anode (27) and a cathode (32).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210146756.1A CN114464751B (en) | 2022-02-17 | 2022-02-17 | Perovskite uLED structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210146756.1A CN114464751B (en) | 2022-02-17 | 2022-02-17 | Perovskite uLED structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114464751A true CN114464751A (en) | 2022-05-10 |
| CN114464751B CN114464751B (en) | 2024-02-06 |
Family
ID=81415527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210146756.1A Active CN114464751B (en) | 2022-02-17 | 2022-02-17 | Perovskite uLED structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114464751B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107369774A (en) * | 2017-07-12 | 2017-11-21 | 华南师范大学 | A kind of compound MQW LED of perovskite and preparation method thereof |
| CN109851510A (en) * | 2018-12-21 | 2019-06-07 | 东南大学 | A kind of compound scintillator of perovskite crystal/quantum dot and its preparation method and application |
| WO2020069729A1 (en) * | 2018-10-02 | 2020-04-09 | Toyota Motor Europe | Method for preparing quantum-dot-in-layered-perovskite heterostructured energy funnels |
| CN111261311A (en) * | 2020-03-30 | 2020-06-09 | 东南大学 | Radiant photovoltaic nuclear battery based on perovskite crystal |
| US20210305529A1 (en) * | 2018-06-14 | 2021-09-30 | Seoul National University R&Db Foundation | Light emitting device comprising perovskite charge transport layer and manufacturing method thereof |
-
2022
- 2022-02-17 CN CN202210146756.1A patent/CN114464751B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107369774A (en) * | 2017-07-12 | 2017-11-21 | 华南师范大学 | A kind of compound MQW LED of perovskite and preparation method thereof |
| US20210305529A1 (en) * | 2018-06-14 | 2021-09-30 | Seoul National University R&Db Foundation | Light emitting device comprising perovskite charge transport layer and manufacturing method thereof |
| WO2020069729A1 (en) * | 2018-10-02 | 2020-04-09 | Toyota Motor Europe | Method for preparing quantum-dot-in-layered-perovskite heterostructured energy funnels |
| CN109851510A (en) * | 2018-12-21 | 2019-06-07 | 东南大学 | A kind of compound scintillator of perovskite crystal/quantum dot and its preparation method and application |
| CN111261311A (en) * | 2020-03-30 | 2020-06-09 | 东南大学 | Radiant photovoltaic nuclear battery based on perovskite crystal |
Non-Patent Citations (2)
| Title |
|---|
| SHILIN LIU 等: "《Embedding PbS Quantum Dots (QDs) in MAPbCl0.5Br2.5 Perovskite Single Crystal for Near-infrared Detection》", 《INTERNATIONAL CONFERENCE ON DISPLAY TECHNOLOGY 2021》, vol. 52, no. 2, pages 423 * |
| SHILIN LIU: "《Embedding PbS quantum dots in MAPbCl0.5Br2.5 perovskite single crystal for near-infrared detection》", INTERNATIONAL CONFERENCE ON DISPLAY TECHNOLOGY, vol. 30, no. 6 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114464751B (en) | 2024-02-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106876566B (en) | QLED device and preparation method thereof | |
| US7888684B2 (en) | Light emitting device and method of producing light emitting device with a semiconductor includes one of chalcopyrite and oxychacogenide | |
| CN101771120B (en) | Semiconductor light-emitting device | |
| CN101263613A (en) | Quantum dot light emitting layer | |
| US20070087469A1 (en) | Particulate for organic and inorganic light active devices and methods for fabricating the same | |
| Wang et al. | Flexible perovskite light-emitting diodes: Progress, challenges and perspective | |
| CN114864835A (en) | Blue light perovskite quantum dot film, electroluminescent diode and preparation | |
| CN111180601B (en) | OLED display device, display substrate and preparation method thereof | |
| CN101222026B (en) | Organic LED display device and manufacture method thereof | |
| CN114464751B (en) | Perovskite uLED structure and preparation method thereof | |
| WO2010035369A1 (en) | Light emitting element and display device | |
| JP2022529544A (en) | Luminous structure, display panel and display device | |
| KR101450858B1 (en) | Organic electroluminescent device and fabracation method by using graphene oxide | |
| CN112786798B (en) | Luminescent material composition and application thereof | |
| JPH04276668A (en) | Charge injection type electroluminescence element | |
| KR20020050014A (en) | White light emission device and the method thereof | |
| CN111162183B (en) | Quantum dot light-emitting diode, preparation method thereof and light source structure | |
| KR20050049436A (en) | Multi-emitter-system for high performance organic light emitting diodes | |
| CN109390477B (en) | Multi-channel hole transport layer, electrical device and QLED device | |
| CN111146347A (en) | Electroluminescent device and preparation method thereof | |
| CN113036043B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| US20240186466A1 (en) | Light-emitting device and manufacturing method thereof | |
| CN118338730A (en) | Micro-LED and QLED hybrid full-color display device monolithic integrated structure and preparation method thereof | |
| CN116997224A (en) | Photoelectric device, preparation method thereof and display device | |
| CN116033785A (en) | Light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |