CN114460676B - 1030nm sinusoidal medium grating and manufacturing method thereof - Google Patents
1030nm sinusoidal medium grating and manufacturing method thereof Download PDFInfo
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- CN114460676B CN114460676B CN202210210169.4A CN202210210169A CN114460676B CN 114460676 B CN114460676 B CN 114460676B CN 202210210169 A CN202210210169 A CN 202210210169A CN 114460676 B CN114460676 B CN 114460676B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 239000005350 fused silica glass Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 6
- 230000010287 polarization Effects 0.000 description 4
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1809—Diffraction gratings with pitch less than or comparable to the wavelength
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
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- Manufacturing & Machinery (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The invention relates to a 1030nm sinusoidal medium grating and a manufacturing method thereof, wherein the grating comprises a top grating, a middle multi-layer medium layer and a substrate; the material of the top grating is a high refractive index film material, the middle multi-layer dielectric layer comprises a plurality of alternately overlapped high refractive index material dielectric film layers and low refractive index material dielectric film layers, and the material of the substrate is a low refractive index material; the groove shape of the top grating is sinusoidal. The manufacturing method comprises the steps that a high-refractive-index film layer is arranged above a middle multi-layer dielectric layer, the high-refractive-index film layer is made of high-refractive-index film materials, and the thickness of the high-refractive-index film layer is 0.5-0.6 mu m; a layer of photoresist is arranged on the high refractive index film layer; the photoresist is made into a mask through a holographic interference system, and then the top grating is etched. The grating can enable TE and TM polarized states to have extremely high diffraction efficiency under Littrow incidence in 1020-1040nm wave bands, and only one film layer needs to be etched during manufacturing, so that the etching process redundancy is high.
Description
Technical Field
The invention relates to a 1030nm sine medium grating and a manufacturing method thereof, belonging to the technical field of optical elements.
Background
In the field of high-power laser, pulse compression gratings are often used as core optical elements, and high diffraction efficiency can be realized by metal gratings, metal dielectric film gratings, all-dielectric gratings and the like, however, the metal gratings and the metal dielectric film gratings are easily broken by laser under high power due to absorption characteristics of the metal gratings and the metal dielectric film gratings, and the metal gratings have high diffraction efficiency only under TM polarization; the all-medium grating has the advantages of high diffraction efficiency and high damage threshold value, and diffraction polarization is irrelevant, so that the all-medium grating is the first choice of the pulse compression grating, however, the conventional all-medium grating has rectangular or trapezoidal groove shape, the grating comprises two or more layers of film layers, the duty ratio of the grating is usually required to be controlled within a certain range, the depth of the grating groove is also required to be accurately controlled, and the angle of the groove shape is also required to be controlled, so that a lot of troubles are brought to the processing of the grating.
Chinese patent application No. 2016610239620. X discloses a 1064 nm polarization independent broadband high diffraction efficiency double layer reflection type all-dielectric grating. The grating can enable incident light of TE and TM polarized modes to be incident at a-1 order Littrow angle, the-1 order reflection diffraction efficiency is higher than 95% in a wavelength bandwidth of 80 nanometers (1020-1100 nanometers), the highest diffraction efficiency is higher than 99%, and the grating has the-1 order diffraction efficiency higher than 95% in a wider angle spectrum (about 5 degrees) and a wide azimuth angle spectrum (plus or minus 15-plus or minus 20 degrees). The duty ratio and the depth of the grating groove need to be controlled during the manufacture of the grating, and the multi-layer film needs to be etched, so that the processing difficulty of the grating is improved.
Disclosure of Invention
In order to overcome the problems, the invention provides a 1030nm sinusoidal medium grating and a manufacturing method thereof, the grating can enable TE and TM polarized states to have extremely high diffraction efficiency under Littrow incidence in 1020-1040nm wave bands, and only one film layer needs to be etched during manufacturing, so that the etching process redundancy is high. The manufacturing method can reduce 441 and nmS reflection of light, and is suitable for manufacturing grating masks through a holographic system.
The technical scheme of the invention is as follows:
first part
A1030 nm sinusoidal medium grating comprises a top grating, a middle multi-layer medium layer and a substrate; the top grating is made of a high-refractive-index film material, the middle multi-layer dielectric layer comprises a plurality of alternately stacked high-refractive-index material dielectric film layers and low-refractive-index material dielectric film layers, and the substrate is made of a low-refractive-index material; the groove type of the top grating is sinusoidal.
Further, the period of the top grating is 833nm, and the depth is 0.5-0.6 mu m.
Further, the intermediate multi-layer dielectric layer has a film structure of ≡m, wherein H is the high refractive index material dielectric film layer, L is the low refractive index material dielectric film layer, m is the alternating times, and m is more than 8, M i For the thickness of the dielectric film layer of the high refractive index material of the ith layer, N i And the thickness of the dielectric film layer of the low refractive index material for the ith layer.
Further, the topmost layer of the middle multi-layer dielectric layer is the low refractive index material dielectric film layer, and the bottommost layer is the high refractive index material dielectric film layer.
Further, the material of the dielectric film layer of the high refractive index material is Ta 2 O 5 Or TiO 2 The material of the low refractive index material dielectric film layer is Si0 2 。
Further, the material of the top grating is Ta 2 O 5 。
Further, the substrate is made of fused quartz.
Second part
A method for manufacturing a 1030nm sinusoidal dielectric grating, for manufacturing a 1030nm sinusoidal dielectric grating according to any one of claims 2-6, comprising the steps of:
a high-refractive-index film layer is arranged above the middle multi-layer dielectric layer, the material of the high-refractive-index film layer is high-refractive-index film material, and the thickness of the high-refractive-index film layer is 0.5-0.6 mu m;
the high refractive index film layer and the middle multi-layer medium layer jointly form an S light high-transmission film for 441nm under 15 DEG incidence and a high-reflection film for 1030nm S light and P light under 38 DEG incidence;
a layer of photoresist is arranged above the high refractive index film layer;
manufacturing the photoresist into a mask through a holographic interference system;
and etching the high refractive index film layer into the top grating.
The invention has the following beneficial effects:
1. the diffraction efficiency of the grating is more than 97% under TE and TM polarization incidence and Littrow incidence in 1020-1040nm wave band, and the highest diffraction efficiency is more than 99%.
2. The grating is simple in film structure and only needs to etch one film layer, so that the etching process is high in redundancy and suitable for mass production.
3. The manufacturing method can reduce the reflectivity of S light in a 441nm wave band to be within 5%, and reduce the reflectivity of P light and S light in 1020-1040nm wave bands to be within 2%, so that standing wave effect caused by overhigh reflectivity of a film layer is effectively prevented.
4. The sine grating is prepared by the method that the thickness of photoresist and the Ta of the top layer 2 O 5 Approximately equivalent, the etching is that only about 45 degrees are needed for rotation etching, the etching depth is 0.5-0.6 mu m, and the etching process is of great redundancy, so that the grating is easy to manufacture.
Drawings
Fig. 1 is a schematic diagram of a film structure according to an embodiment of the invention.
Fig. 2 is a graph showing S-ray reflectance at 15 ° incidence for a film layer according to an embodiment of the present invention.
Fig. 3 is a graph showing P-ray and S-ray reflectance curves for a film layer according to an embodiment of the present invention at 38 ° incidence.
Fig. 4 is a schematic diagram of a grating structure according to an embodiment of the invention.
FIG. 5 is a graph showing diffraction efficiency of a grating according to an embodiment of the present invention.
The reference numerals in the drawings are as follows:
1. a top grating; 2. an intermediate multi-layer dielectric layer; 201. a high refractive index material dielectric film layer; 202. a dielectric film layer of a material with a first refractive index; 3. a substrate; 4. a high refractive index film layer.
Detailed Description
The invention will now be described in detail with reference to the drawings and to specific embodiments.
First part
Referring to fig. 4-5, a 1030nm sinusoidal dielectric grating includes a top grating 1, an intermediate multi-layer dielectric layer 2, and a substrate 3; the material of the top grating 1 is a high refractive index film material, the middle multi-layer dielectric layer 2 comprises a plurality of alternately stacked high refractive index material dielectric film layers 201 and low refractive index material dielectric film layers 202, and the material of the substrate 3 is a low refractive index material; the groove shape of the top grating 1 is sine-shaped. Compared with the existing all-dielectric grating, the grating has only one layer of film layer, and the depth of the grating groove, the duty ratio and the groove type are not required to be precisely controlled during manufacturing, so that the manufacturing difficulty of the grating is reduced.
Further, the period of the top grating 1 is 833nm, and the depth is 0.5-0.6 μm.
Further, the film system structure of the intermediate multi-layer dielectric layer 2 is M i HN i L++m, wherein H is the high refractive index material dielectric film 1201, L is the low refractive index material dielectric film 202, m is the number of alternations, and m is greater than 8, M i Thickness of dielectric film layer 201 of the high refractive index material of the ith layer, N i The dielectric film 202 is formed to have a thickness equal to that of the i-th layer.
Further, the top layer of the intermediate multi-layer dielectric layer 2 is the low refractive index material dielectric film layer 202, and the bottom layer is the high refractive index material dielectric film layer 201.
Further, the material of the dielectric film layer 201 is Ta 2 O 5 Or TiO 2 The material of the low refractive index material dielectric film 202 is Si0 2 。
Further, the material of the top grating 1 is Ta 2 O 5 。
Further, the material of the substrate 3 is fused silica.
In one embodiment of the present invention, the material of the dielectric layer 201 of the high refractive index material is Ta 2 O 5 The thickness of the top layer grating 1 is 565nm, and the structure of the middle multi-layer dielectric layer 2 is shown in table 1:
TABLE 1 intermediate multilayer dielectric layer structure
In this embodiment, with reference to fig. 5, the diffraction efficiency of the grating is greater than 97% when incident in the littrow direction at a wavelength of 1020 to 1040 nm.
Second part
Referring to fig. 1-3, a method for manufacturing a 1030nm sine-type medium grating, which is used for manufacturing the 1030nm sine-type medium grating in the first part, comprises the following steps:
a high-refractive-index film layer 4 is arranged above the middle multi-layer dielectric layer 2, the material of the high-refractive-index film layer 4 is high-refractive-index film material, and the thickness of the high-refractive-index film layer 4 is 0.5-0.6 mu m;
the high refractive index film layer 4 and the middle multi-layer dielectric layer 2 jointly form an S light high-transmission film for 441nm under 15 DEG incidence and a high-reflection film for 1030nm S light and P light under 38 DEG incidence;
a layer of photoresist is arranged above the high refractive index film layer 4;
manufacturing the photoresist into a mask through a holographic interference system;
the high refractive index film layer 4 is etched into the top grating 1.
The holographic system adopts S polarized laser with 441nm, for the grating with 833nm period, the holographic interference angle is 15 degrees, and in order to prevent standing wave effect caused by the too high reflectivity of the film layer, the reflectivity of S light needs to be reduced to be within 5 percent. FIG. 2 is a graph showing the reflectance of the high refractive index film 4 at a thickness of 0.565 μm. Meanwhile, in order to improve the diffraction efficiency of the grating, the high refractive index film layer 4 and the intermediate multi-layer dielectric layer form a high reflection film structure within 1020-1040nm wave band, so that the reflectivity of P light and S light with incidence angles of 30-45 degrees is more than 98%, and refer to fig. 3.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures made by the description of the invention and the accompanying drawings, or direct or indirect application in other related technical fields, are included in the scope of the invention.
Claims (6)
1. A 1030nm sinusoidal dielectric grating, which is characterized by comprising a top grating (1), an intermediate multilayer dielectric layer (2) and a substrate (3); the top grating (1) is made of high-refractive-index film materials, the middle multi-layer dielectric layer (2) comprises a plurality of alternately stacked high-refractive-index material dielectric film layers (201) and low-refractive-index material dielectric film layers (202), and the substrate (3) is made of low-refractive-index materials; the groove shape of the top grating (1) is sinusoidal;
the period of the top grating (1) is 833nm, and the depth is 0.5-0.6 mu m;
the film system structure of the middle multi-layer medium layer (2) is (M) i HN i L) m, wherein H is the high refractive index material dielectric film layer (201), L is the low refractive index material dielectric film layer (202), m is the number of alternations, and m is greater than 8, M i For the thickness of the dielectric film layer (201) of the high refractive index material of the ith layer, N i And (3) the thickness of the dielectric film layer (202) of the low refractive index material for the ith layer.
2. The sine-shaped dielectric grating of claim 1, wherein the top-most layer of the middle multi-layer dielectric layer (2) is the low refractive index material dielectric film layer (202), and the bottom-most layer is the high refractive index material dielectric film layer (201).
3. The 1030nm sine-wave dielectric grating according to claim 1, wherein the material of the high refractive index material dielectric film layer (201) is Ta 2 O 5 Or TiO 2 The material of the low refractive index material dielectric film layer (202) is Si0 2 。
4. The 1030nm sine-wave dielectric grating according to claim 1, characterized in that the material of the top grating (1) is Ta 2 O 5 。
5. A sine wave dielectric grating according to claim 1, characterized in that the material of the substrate (3) is fused silica.
6. A method for manufacturing a 1030nm sinusoidal dielectric grating, which is used for manufacturing the 1030nm sinusoidal dielectric grating according to any one of claims 2-5, and is characterized by comprising the following steps:
a high-refractive-index film layer (4) is arranged above the middle multi-layer dielectric layer (2), the high-refractive-index film layer (4) is made of high-refractive-index film materials, and the thickness of the high-refractive-index film layer (4) is 0.5-0.6 mu m;
the high refractive index film layer (4) and the middle multi-layer medium layer (2) jointly form an S light high-transmission film for 441nm under 15 DEG incidence and a high-reflection film for 1030nm S light and P light under 38 DEG incidence;
a layer of photoresist is arranged above the high refractive index film layer (4);
manufacturing the photoresist into a mask through a holographic interference system;
-etching the high refractive index film layer (4) into the top grating (1).
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| JPWO2008081555A1 (en) * | 2007-01-05 | 2010-04-30 | 株式会社島津製作所 | Manufacturing method of blazed diffraction grating |
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| CN110989061A (en) * | 2019-11-08 | 2020-04-10 | 中国科学院福建物质结构研究所 | All-dielectric polarization-independent total internal reflection grating and manufacturing method thereof |
| CN113064227A (en) * | 2021-03-23 | 2021-07-02 | 中国科学院微电子研究所 | Preparation method of sinusoidal grating |
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| US20080049328A1 (en) * | 2006-08-25 | 2008-02-28 | Haixin Zhou | Tunable diffraction grating having electro-optic material and method for operating same |
| JP2008081555A (en) * | 2006-09-26 | 2008-04-10 | Toyo Tire & Rubber Co Ltd | Polyol composition for rigid polyurethane foam, method for producing rigid polyurethane foam, and method for applying heat insulation to low-temperature tank |
| EP2141519A1 (en) * | 2008-07-04 | 2010-01-06 | Université Jean-Monnet | Diffractive polarizing mirror device |
| FR2954524B1 (en) * | 2009-12-17 | 2012-09-28 | Ecole Polytech | OPTIMIZED DIELECTRIC REFLECTING DIFFRACTION NETWORK |
| US10802184B2 (en) * | 2014-04-28 | 2020-10-13 | Ii-Vi Delaware Inc. | Reflective diffraction gratings employing efficiency enhancement or etch barrier layers |
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| JPWO2008081555A1 (en) * | 2007-01-05 | 2010-04-30 | 株式会社島津製作所 | Manufacturing method of blazed diffraction grating |
| CN101718883A (en) * | 2009-12-09 | 2010-06-02 | 中国科学院上海光学精密机械研究所 | High-density deep-etching sinusoidal groove type grating polarization beam splitter |
| CN102289014A (en) * | 2011-09-16 | 2011-12-21 | 中国科学院上海光学精密机械研究所 | Metal dielectric film reflection polarization beam splitting grating for waveband of 1,053 nanometers |
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| CN113064227A (en) * | 2021-03-23 | 2021-07-02 | 中国科学院微电子研究所 | Preparation method of sinusoidal grating |
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