CN114447160A - Method for reducing efficiency attenuation of PERC battery - Google Patents
Method for reducing efficiency attenuation of PERC battery Download PDFInfo
- Publication number
- CN114447160A CN114447160A CN202210150073.3A CN202210150073A CN114447160A CN 114447160 A CN114447160 A CN 114447160A CN 202210150073 A CN202210150073 A CN 202210150073A CN 114447160 A CN114447160 A CN 114447160A
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- Prior art keywords
- thermocouple
- temperature control
- temperature
- attenuation
- cad
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 8
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 8
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 8
- 238000007664 blowing Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 238000005286 illumination Methods 0.000 abstract description 7
- 238000000137 annealing Methods 0.000 abstract description 5
- 238000012544 monitoring process Methods 0.000 abstract description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract description 3
- 239000011159 matrix material Substances 0.000 abstract description 2
- 230000008929 regeneration Effects 0.000 abstract description 2
- 238000011069 regeneration method Methods 0.000 abstract description 2
- 239000000969 carrier Substances 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention belongs to the technical field of crystalline silicon solar cells, and particularly relates to a method for reducing efficiency attenuation of a PERC cell, which comprises a thermocouple positioned in the middle of a CAD air blowing row, wherein the thermocouple arranged between an upper electrode and a lower electrode sequentially comprises an upper temperature control thermocouple, a middle temperature control thermocouple and a lower temperature control thermocouple from top to bottom; the CAD air blowing row consists of an upper two CDA compressed air pipes, a middle two CDA compressed air pipes and a lower two CDA compressed air pipes. The five-point temperature control in the scheme of the invention is added with two temperature monitoring points on the basis of the three-point temperature control in the prior art, so that the upper, middle and lower temperatures of the silicon chip are more uniform, the injection of carriers into the matrix is more stable, a BO complex in the annealing state in the silicon chip is converted into a more stable regeneration state, and the BO complex in the annealing state in the silicon chip is not converted into an attenuation state under the subsequent illumination, thereby reducing the light attenuation and inhibiting the power loss brought by the illumination.
Description
Technical Field
The invention belongs to the technical field of crystalline silicon solar cells, and particularly relates to a method for reducing efficiency attenuation of a PERC cell.
Background
In a P-type crystalline silicon solar cell, under illumination, an annealing state B-O (original state) in a silicon wafer is converted into an attenuation state with composite activity, so that the power loss of the cell is caused, and the attenuation state is annealed for a few minutes at about 200 ℃ and then converted into the annealing state, so that the power of the cell is recovered to a certain degree, but the recovery is unstable and is further attenuated under illumination; in addition, the BO complex in the attenuation state can be converted into a stable and complex-activity-free re-ecology under a certain condition, so that the aim of resisting light decay is fulfilled, but the conversion rate of the conversion is low, and the power attenuation caused by illumination cannot be greatly overcome.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a method for reducing the efficiency attenuation of a PERC battery.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
the method for reducing efficiency attenuation of the PERC battery comprises a thermocouple positioned in the middle of a CAD air blowing row, and the thermocouple arranged between an upper electrode and a lower electrode sequentially comprises an upper temperature control thermocouple, a middle temperature control thermocouple and a lower temperature control thermocouple from top to bottom.
Furthermore, the CAD air blowing row is composed of an upper two, a middle two and a lower two CDA compressed air pipes.
Preferably, the set temperature of the lower temperature-control thermocouple is greater than or equal to the set temperature of the upper temperature-control thermocouple.
Preferably, the set temperature of the upper temperature control thermocouple is 15-20 ℃ higher or lower than the set temperature of the middle temperature control thermocouple.
Preferably, the set temperature of the lower temperature control thermocouple is 10-15 ℃ lower than that of the middle temperature control thermocouple.
The invention mainly aims to reduce the efficiency attenuation of a PERC battery, designs an electrical injection temperature control method, and can effectively reduce the efficiency attenuation of the battery through the method, wherein the five-point temperature control in the scheme of the invention is added with two temperature monitoring points on the basis of the three-point temperature control in the prior art, so that the upper temperature and the lower temperature of a silicon wafer are more uniform, a current carrier is more stably injected into a matrix, a BO complex in the annealing state of the silicon wafer is converted into a more stable regeneration state, and the BO complex cannot be converted into an attenuation state under the continuous illumination, so that the light attenuation is reduced, and the power loss caused by the illumination is inhibited. The method can be completely realized on the existing equipment without adding any extra cost, and has strong practicability.
Drawings
FIG. 1 is a schematic diagram of a front side of a conventional electrical injection temperature control system;
fig. 2 is a schematic diagram of the front structure of the novel electrical injection temperature control system of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to examples. Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention. It is to be understood that the following description is only illustrative of the present invention and is not to be construed as limiting the present invention.
As shown in fig. 1, a conventional electrical injection temperature control system includes two parts: middle thermocouple part (1), upper, middle and lower CAD air-blowing row (3). The middle thermocouple mainly plays a role in heating, the CAD air blowing row plays a role in controlling temperature, and the cells at each station are large in number and cannot be heated uniformly.
The present invention is optimized for the prior art as shown in fig. 2. The schematic diagram mainly comprises two parts: middle thermocouple parts (3), upper, middle and lower CAD air blowing rows (6). The number of the thermocouples is increased from 1 in the middle to 3 in the upper, middle and lower parts, and the CDA compressed air pipes are changed into two in the upper part, two in the middle part and two in the lower part. The temperature monitoring of the upper, middle and lower parts of the electric injection is increased through the transformation, and the temperature of the upper, middle and lower areas of the silicon wafer is controlled in time, so that the condition that the upper, middle and lower temperatures are uniform and the efficiency attenuation of the cell is reduced is achieved.
The light decay before upgrading is on average 1.2%. The light attenuation after upgrading is relatively stable before upgrading when the average light attenuation of 0.91 percent is relatively stable; the results are shown in table 1 below.
TABLE 1 light decay contrast before and after electrical injection upgrade
The number of the thermocouples is increased from the middle one in the prior art to three in total, namely an upper thermocouple, a middle thermocouple and a lower thermocouple, and the CDA compressed air pipes are optimized to be an upper two, a middle two and a lower two. The temperature monitoring of the upper, middle and lower parts of the electric injection is increased through the transformation, and the temperature of the upper, middle and lower areas of the silicon wafer is controlled in time, so that the condition that the upper, middle and lower temperatures are uniform and the efficiency attenuation of the cell is reduced is achieved.
The above embodiments are merely preferred embodiments of the present invention, and any simple modification, modification and substitution changes made to the above embodiments according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (5)
1. The method for reducing efficiency attenuation of the PERC battery is characterized by comprising a thermocouple positioned in the middle of a CAD air blowing row, wherein the thermocouple arranged between an upper electrode and a lower electrode sequentially comprises an upper temperature control thermocouple, a middle temperature control thermocouple and a lower temperature control thermocouple from top to bottom.
2. The method of claim 1, wherein the CAD air blast array is comprised of upper, middle, and lower CDA compressed air tubes.
3. The method of claim 1, wherein said lower temperature controlled thermocouple is set at a temperature greater than or equal to said upper temperature controlled thermocouple.
4. The method of claim 1, wherein the set temperature of said upper temperature-controlled thermocouple is 15-20 ℃ higher or lower than the set temperature of said intermediate temperature-controlled thermocouple.
5. The method of claim 1, wherein the set temperature of said lower temperature-controlled thermocouple is 10-15 ℃ lower than the set temperature of said intermediate temperature-controlled thermocouple.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210150073.3A CN114447160A (en) | 2022-02-11 | 2022-02-11 | Method for reducing efficiency attenuation of PERC battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210150073.3A CN114447160A (en) | 2022-02-11 | 2022-02-11 | Method for reducing efficiency attenuation of PERC battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114447160A true CN114447160A (en) | 2022-05-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210150073.3A Pending CN114447160A (en) | 2022-02-11 | 2022-02-11 | Method for reducing efficiency attenuation of PERC battery |
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| Country | Link |
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| CN (1) | CN114447160A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN209119152U (en) * | 2018-12-24 | 2019-07-16 | 苏州阿特斯阳光电力科技有限公司 | The temperature control equipment of cell piece lamination under energized state |
| CN210073782U (en) * | 2019-07-25 | 2020-02-14 | 常州时创能源科技有限公司 | Electric injection equipment for solar cell |
| CN110838537A (en) * | 2019-12-17 | 2020-02-25 | 苏州巨能图像检测技术有限公司 | Solar cell sheet electric injection light attenuation zone temperature control method and electric injection device |
| US20210119074A1 (en) * | 2018-06-28 | 2021-04-22 | South China University Of Technology | An electric injection annealing test device and a method thereof for crystalline silicon photovoltaic solar cells |
-
2022
- 2022-02-11 CN CN202210150073.3A patent/CN114447160A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210119074A1 (en) * | 2018-06-28 | 2021-04-22 | South China University Of Technology | An electric injection annealing test device and a method thereof for crystalline silicon photovoltaic solar cells |
| CN209119152U (en) * | 2018-12-24 | 2019-07-16 | 苏州阿特斯阳光电力科技有限公司 | The temperature control equipment of cell piece lamination under energized state |
| CN210073782U (en) * | 2019-07-25 | 2020-02-14 | 常州时创能源科技有限公司 | Electric injection equipment for solar cell |
| CN110838537A (en) * | 2019-12-17 | 2020-02-25 | 苏州巨能图像检测技术有限公司 | Solar cell sheet electric injection light attenuation zone temperature control method and electric injection device |
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