CN114421943A - High-reliability anti-radiation atomic switch type configuration unit structure - Google Patents
High-reliability anti-radiation atomic switch type configuration unit structure Download PDFInfo
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- CN114421943A CN114421943A CN202210086678.0A CN202210086678A CN114421943A CN 114421943 A CN114421943 A CN 114421943A CN 202210086678 A CN202210086678 A CN 202210086678A CN 114421943 A CN114421943 A CN 114421943A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
Abstract
The invention discloses a high-reliability radiation-resistant atomic switch type configuration unit structure, which belongs to the field of microelectronic integrated circuits and has an up-and-down symmetrical structure, and comprises atomic switches AS1 and AS2, gate tubes T11, T12, T21 and T22 and a signal transmission tube T3; the drain end of a gate tube T11 is connected with the cathode of an atom switch AS1, the drain end of a gate tube T21 is connected with the cathode of an atom switch AS2, and the source end of the gate tube T11 is connected with the source end of a gate tube T21; the drain end of a gate tube T12 is connected with the cathode of an atom switch AS1, the drain end of a gate tube T22 is connected with the cathode of an atom switch AS2, and the source ends of the gate tubes T12 and T22 are both grounded; the control gate of the signal transmission tube T3 is connected to the source terminal of the gate tube T11 and the source terminal of the gate tube T21. The AS configuration unit has simple structure, compatibility with CMOS process, high integration level, high speed, high reliability, high programming efficiency, high on-off ratio and other advantages, and strong total dose resistance.
Description
Technical Field
The invention relates to the technical field of microelectronic integrated circuits, in particular to a high-reliability radiation-resistant atomic switch type configuration unit structure.
Background
With the development of electronic systems towards multifunction, high speed, miniaturization and low power consumption required by various key projects in the fields of aviation, aerospace, ships, radars, strategic missiles, electronic countermeasure, communication and the like, the requirement on a high-reliability and radiation-resistant programmable logic device FPGA is more prominent. The traditional FPGA has the problems of poor radiation resistance, high power consumption, volatility (SRAM type), low speed, high programming voltage (Flash type), small scale (antifuse type) and the like, and a novel high-performance FPGA is urgently needed.
Disclosure of Invention
The invention aims to provide a high-reliability radiation-resistant atomic switch type configuration unit structure to solve the problems of poor radiation resistance, low reliability and small scale of the traditional FPGA.
In order to solve the above technical problems, the present invention provides a highly reliable radiation-resistant atomic switch configuration unit structure, which has a vertically symmetrical structure, and includes atomic switches AS1 and AS2, gate tubes T11, T12, T21 and T22, and a signal transmission tube T3;
the drain end of a gate tube T11 is connected with the cathode of an atom switch AS1, the drain end of a gate tube T21 is connected with the cathode of an atom switch AS2, and the source end of the gate tube T11 is connected with the source end of a gate tube T21;
the drain end of a gate tube T12 is connected with the cathode of an atom switch AS1, the drain end of a gate tube T22 is connected with the cathode of an atom switch AS2, and the source ends of the gate tubes T12 and T22 are both grounded;
the control gate of the signal transmission tube T3 is connected to the source terminal of the gate tube T11 and the source terminal of the gate tube T21.
Optionally, the atom switches AS1 and AS2 are sandwich structures formed by an active metal electrode, a solid electrolyte and an inert metal electrode, the active metal electrode is used AS an anode, and the inert metal electrode is used AS a cathode.
Optionally, when the atom switch is Set, applying a positive voltage Vset to the anode, grounding the cathode, forming a conductive channel of a metal conductive filament in the solid electrolyte, and turning on the atom switch; the atomic switch has non-volatility, namely after the Set process, when the anode voltage is 0V, the metal conductive filament cannot be dissolved and can stably exist;
when the atomic switch is subjected to Reset operation, a negative voltage Vreset is applied to the anode, the cathode is grounded, the metal conductive filament is dissolved, and the atomic switch is disconnected, namely the Reset process.
Optionally, when Vset or Vreset is applied to the anode of the atomic switch AS1, the control gate SG12 of the gate transistor T12 applies a designated potential to turn on the gate transistor T12, thereby implementing a Set or Reset process of the atomic switch AS 1; when Vset or Vreset is applied to the anode of the atom switch AS2, the control gate SG22 of the gate tube T22 applies a designated potential to turn on the gate tube T22, thereby implementing the Set or Reset process of the atom switch AS 2.
Optionally, when the atomic switch AS1 performs Set or Reset operation, the gate tube T11 is closed to avoid the signal transmission tube T3 being opened by mistake, thereby improving the reliability of the AS 2; when the atomic switch AS2 performs Set or Reset operation, the gate tube T21 is closed to prevent the signal transmission tube T3 from being opened by mistake, thereby improving the reliability of the AS 1.
Optionally, the gate tubes T11, T12, T21, T22 and the signal transmission tube T3 are the same channel type MOS devices, and are low-voltage MOS tubes.
In the structure of the high-reliability radiation-resistant atomic switch type configuration unit provided by the invention, the 'on/off' state of a signal transmission tube transmission signal is controlled through the setting (Set) and the resetting (Reset) of the atomic switch unit, and the structure mainly comprises 2 atomic switches, 4 gate tubes and 1 signal transmission tube. The atom switch is composed of an active metal electrode, an inert metal electrode and a solid electrolyte layer sandwiched between the active metal electrode and the inert metal electrode, and the Set and Reset operations thereof are based on an electrochemical metallization mechanism and utilize the formation and annihilation of metal conductive filaments. The AS configuration unit has the advantages of simple structure, compatibility with a CMOS process, high integration level, high speed, high reliability, high programming efficiency, high on-off ratio and the like, has strong total dose resistance, and can be widely applied to high-reliability, high-integration level, radiation resistance and nonvolatile programmable logic devices, such AS reconfigurable logic blocks, connecting blocks and switch block core configuration units in FPGA.
Drawings
FIG. 1 is a schematic diagram of a single atomic switch device and Set and Reset processes in a highly reliable radiation-resistant atomic switch configuration unit structure provided by the present invention;
FIG. 2 is a schematic diagram of a highly reliable radiation-resistant atomic switch configuration unit structure provided in the present invention;
FIG. 3 is a schematic diagram of the present invention for preventing the signal transmission tube T3 from being conducted and improving the reliability of the atomic switch during the Set process;
FIG. 4 is a schematic diagram of a Set process of an atomic switch AS1 in a configuration unit structure with high reliability and radiation resistance according to the present invention;
fig. 5 is a schematic diagram illustrating transmission of a signal transmission tube T3 after Set operation of an atomic switch AS1 in a highly reliable radiation-resistant atomic switch configuration unit structure according to the present invention;
FIG. 6 is a schematic diagram of the Reset process of the atomic switch AS1 in the structure of the high-reliability radiation-resistant atomic switch configuration unit according to the present invention;
FIG. 7 is a schematic diagram illustrating the Set operation of an atomic switch AS2 in a highly reliable radiation-resistant atomic switch configuration cell structure according to the present invention;
fig. 8 is a schematic diagram of the signal transmission tube T3 being turned off after Reset of the atomic switch AS1 and Set operation of AS2 in the configuration unit structure with high reliability and radiation resistance provided by the present invention.
Detailed Description
The structure of a highly reliable radiation-resistant atomic switch type configuration unit proposed by the present invention is further described in detail with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
As shown in fig. 1, the atomic switch is a sandwich structure composed of an active metal electrode 1, a solid electrolyte 2 and an inert metal electrode 3, wherein the active metal electrode 1 is used as an anode and the inert metal electrode 3 is used as a cathode. The atom switch mainly utilizes the redox reaction of an active metal electrode to dominate the formation and annihilation of metal conductive filaments. When a positive voltage Vset is applied to the active metal electrode 1 (i.e., the anode) and the inert metal electrode 3 (i.e., the cathode) is grounded, the metal atoms M in the active metal electrode 1 undergo an oxidation reaction to form Mn+Ion (M-ne- → M)n+)，Mn+The ions will move towards the inert metal electrode 3 under the action of the electric field, Mn+The ions can obtain electrons in the moving process or after reaching the inert metal electrode and are reduced into M metal atoms (M)n++ ne- → M), forming the metal conductive filaments 4 (i.e., Set process). When the anode is applied with a negative voltage Vreset, the metal conductive filament 4 dissolves (i.e., Reset process).
The invention provides a high-reliability radiation-resistant atomic switch type configuration unit structure, which comprises atomic switches AS1 and AS2, gate tubes T11, T12, T21 and T22 and a signal transmission tube T3, AS shown in FIG. 2; the drain end of a gate tube T11 is connected with the cathode of an atom switch AS1, the drain end of a gate tube T21 is connected with the cathode of an atom switch AS2, and the source end of the gate tube T11 is connected with the source end of a gate tube T21; the drain end of a gate tube T12 is connected with the cathode of an atom switch AS1, the drain end of a gate tube T22 is connected with the cathode of an atom switch AS2, and the source ends of the gate tubes T12 and T22 are both grounded; the control gate of the signal transmission tube T3 is connected to the source terminal of the gate tube T11 and the source terminal of the gate tube T21.
In the Set process of the atomic switch AS1, the on-resistance of the atomic switch AS1 is small, and the voltage division also exists in the gate transistor T12, so that the drain terminal potential of the gate transistor T12 is V1, and if there are no gate transistors T11 and T21, the V1 is directly added to the gate terminal of the signal transistor T3 and the cathode of the atomic switch AS2, which may cause the signal transistor T3 to be turned on and the reliability of the atomic switch AS2 to be reduced, AS shown in fig. 3.
AS shown in fig. 4, in the Set process of the atom switch AS1, to improve reliability, the gate tubes T11, T21 and T22 are turned off, the anode of the atom switch AS1 is applied with the positive voltage Vset, and the cathode is grounded through the gate tube T12. After the Set process is completed, the gate tube T12 is turned off, the gate tube T11 is turned on, the operating voltage Vcc is applied to the anode of the atomic switch AS1, and the signal transmission tube T3 is turned on to complete signal transmission, AS shown in fig. 5. Reset operation of the atom switch AS1 is performed by applying a negative voltage Vreset to the anode of the atom switch AS1 and grounding the cathode through the gate tube T12. To improve reliability, the gate tubes T11, T21, and T22 are disconnected as shown in fig. 6.
AS shown in fig. 7, during the Set of the atom switch AS2, to ensure the reliability, the gate tubes T11, T12 and T21 are closed, the anode of the atom switch AS2 is applied with a positive voltage Vset, and the cathode is grounded through the gate tube T22. After the atomic switch AS2 completes the Set operation, the anode of the atomic switch AS2 is 0V, the gate tube T22 is closed, the gate tube T21 is opened, the gate end of the signal transmission tube T3 is 0V, and the signal transmission is disconnected, AS shown in fig. 8.
The invention adopts a vertically symmetrical structure, so that the Set operation can be carried out on the atomic switch AS2 at first, and the process is repeated to complete the on-off of the signal transmission tube T3.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (6)
1. A high-reliability radiation-resistant atom switch type configuration unit structure is characterized by having a vertically symmetrical structure and comprising atom switches AS1 and AS2, gate tubes T11, T12, T21 and T22 and a signal transmission tube T3;
the drain end of a gate tube T11 is connected with the cathode of an atom switch AS1, the drain end of a gate tube T21 is connected with the cathode of an atom switch AS2, and the source end of the gate tube T11 is connected with the source end of a gate tube T21;
the drain end of a gate tube T12 is connected with the cathode of an atom switch AS1, the drain end of a gate tube T22 is connected with the cathode of an atom switch AS2, and the source ends of the gate tubes T12 and T22 are both grounded;
the control gate of the signal transmission tube T3 is connected to the source terminal of the gate tube T11 and the source terminal of the gate tube T21.
2. The highly reliable radiation-resistant atomic switch configuration cell structure of claim 1, wherein the atomic switches AS1 and AS2 are sandwich structures consisting of active metal electrode-solid electrolyte-inert metal electrode, the active metal electrode being an anode and the inert metal electrode being a cathode.
3. The highly reliable radiation-resistant atomic switch type configuration unit structure as Set forth in claim 2, wherein, when the atomic switch is Set-operated, a positive voltage Vset is applied to said anode while said cathode is grounded, a conductive path of a metal conductive filament is formed in the solid electrolyte, and the atomic switch is turned on; the atomic switch has non-volatility, namely after the Set process, when the anode voltage is 0V, the metal conductive filament cannot be dissolved and can stably exist;
when the atomic switch is subjected to Reset operation, a negative voltage Vreset is applied to the anode, the cathode is grounded, the metal conductive filament is dissolved, and the atomic switch is disconnected, namely the Reset process.
4. The highly reliable radiation-resistant atomic switch configuration unit structure AS claimed in claim 3, wherein when Vset or Vreset is applied to the anode of the atomic switch AS1, the control gate SG12 of the gate transistor T12 applies a specified potential to turn on the gate transistor T12, thereby implementing the Set or Reset process of the atomic switch AS 1; when Vset or Vreset is applied to the anode of the atom switch AS2, the control gate SG22 of the gate tube T22 applies a designated potential to turn on the gate tube T22, thereby implementing the Set or Reset process of the atom switch AS 2.
5. The highly reliable radiation-resistant atomic switch type configuration unit structure AS claimed in claim 4, wherein when the atomic switch AS1 performs Set or Reset operation, the gate tube T11 is closed to avoid the signal transmission tube T3 being opened by mistake, thereby improving the reliability of AS 2; when the atomic switch AS2 performs Set or Reset operation, the gate tube T21 is closed to prevent the signal transmission tube T3 from being opened by mistake, thereby improving the reliability of the AS 1.
6. The high-reliability radiation-resistant atomic switch configuration unit structure as claimed in claim 1, wherein said gate transistors T11, T12, T21, T22 and said signal transmission transistor T3 are the same channel type MOS devices, and are low-voltage MOS transistors.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115085712A (en) * | 2022-07-22 | 2022-09-20 | 中国电子科技集团公司第五十八研究所 | SONOS (silicon oxide nitride oxide semiconductor) type pFLASH (pulse-frequency laser absorption spectroscopy) switch unit structure and process integration method thereof |
| CN116505927A (en) * | 2023-04-27 | 2023-07-28 | 中国电子科技集团公司第五十八研究所 | High-reliability anti-fuse switch unit structure |
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| US5561300A (en) * | 1991-12-24 | 1996-10-01 | Hitachi, Ltd. | Atomic switching devices and logical circuits |
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2022
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115085712A (en) * | 2022-07-22 | 2022-09-20 | 中国电子科技集团公司第五十八研究所 | SONOS (silicon oxide nitride oxide semiconductor) type pFLASH (pulse-frequency laser absorption spectroscopy) switch unit structure and process integration method thereof |
| CN115085712B (en) * | 2022-07-22 | 2022-11-01 | 中国电子科技集团公司第五十八研究所 | Process integration method for SONOS (silicon oxide nitride oxide semiconductor) type pFLSH (pulse frequency absorption laser) switch unit structure |
| CN116505927A (en) * | 2023-04-27 | 2023-07-28 | 中国电子科技集团公司第五十八研究所 | High-reliability anti-fuse switch unit structure |
| CN116505927B (en) * | 2023-04-27 | 2023-09-26 | 中国电子科技集团公司第五十八研究所 | High-reliability anti-fuse switch unit structure |
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