CN114420873A - Display module and display device - Google Patents
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- CN114420873A CN114420873A CN202210084347.3A CN202210084347A CN114420873A CN 114420873 A CN114420873 A CN 114420873A CN 202210084347 A CN202210084347 A CN 202210084347A CN 114420873 A CN114420873 A CN 114420873A
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- 206010070834 Sensitisation Diseases 0.000 description 10
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
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Abstract
The embodiment of the invention provides a display module and a display device. The display module comprises a pixel circuit layer, a light-emitting device layer and an antireflection layer; the display module comprises a display surface, the light-emitting device layer is positioned on one side of the pixel circuit layer close to the display surface, and the anti-reflection layer is positioned on one side of the pixel circuit layer far away from the light-emitting device layer; the display area of the display module comprises a first display area and a second display area, the second display area at least partially surrounds the first display area, and at least the first display area comprises a reflection reducing layer. The invention can solve the problem of uneven display of the display area.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display module and a display device.
Background
The scheme of sensitization module under with the screen is used in the demonstration field, and the application to sensitization module can be realized being received by sensitization module after light pierces through the display screen. The display area that corresponds at sensitization module can normally show, so can promote the display screen and account for the ratio, promote user's visual experience. Wherein, sensitization module can be fingerprint identification module, camera, infrared induction module etc. under the screen.
The problem of uneven display exists in the display device of sensitization module scheme under the application screen at present, and the display area that corresponds at the sensitization module has the phenomenon of white group or black group, influences the display effect.
Disclosure of Invention
The embodiment of the invention provides a display module and a display device, which aim to solve the problem of uneven display in the prior art.
In a first aspect, an embodiment of the present invention provides a display module, where the display module includes a pixel circuit layer, a light emitting device layer, and an anti-reflection layer; the display module comprises a display surface, the light-emitting device layer is positioned on one side of the pixel circuit layer close to the display surface, and the anti-reflection layer is positioned on one side of the pixel circuit layer far away from the light-emitting device layer;
the display area of the display module comprises a first display area and a second display area, the second display area at least partially surrounds the first display area, and at least the first display area comprises a reflection reducing layer.
In a second aspect, an embodiment of the present invention further provides a display device, including the display module provided in any embodiment of the present invention, and the display device further includes a photosensitive module, where the photosensitive module overlaps the first display area in a direction perpendicular to a plane where the display surface is located.
The display module and the display device provided by the embodiment of the invention have the following beneficial effects: the anti-reflection layer is arranged in the first display area at least, the anti-reflection layer is positioned on one side, far away from the light-emitting device layer, of the pixel circuit layer, the anti-reflection layer has the function of reducing reflection light, light emitted from the pixel circuit layer in the direction far away from the display surface can be reflected by other structural layers after penetrating through the anti-reflection layer, the reflection light is emitted into the anti-reflection layer again and is absorbed by the anti-reflection layer, therefore, the reflection light emitted to the pixel circuit layer can be reduced, and the influence of the reflection light on the characteristics of transistors in the pixel circuit layer can be reduced. When the scheme of the photosensitive module is applied to the screen, the difference between the characteristics of the transistors in the first display area and the second display area can be reduced, and the display unevenness is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without inventive labor.
FIG. 1 is a schematic diagram of a display device in the prior art;
fig. 2 is a schematic view of a display module according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view taken along line A-A' of FIG. 2;
FIG. 4 is another schematic cross-sectional view taken along line A-A' of FIG. 2;
FIG. 5 is another schematic cross-sectional view taken along line A-A' of FIG. 2;
FIG. 6 is another schematic cross-sectional view taken along line A-A' of FIG. 2;
FIG. 7 is another schematic cross-sectional view taken along line A-A' of FIG. 2;
FIG. 8 is another schematic cross-sectional view taken along line A-A' of FIG. 2;
FIG. 9 is another schematic cross-sectional view taken along line A-A' of FIG. 2;
FIG. 10 is another schematic cross-sectional view taken along line A-A' of FIG. 2;
FIG. 11 is another schematic cross-sectional view taken along line A-A' of FIG. 2;
fig. 12 is a schematic view of a display device according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the examples of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
Fig. 1 is a schematic view of a display device in the prior art, and as shown in fig. 1, the display device includes a display panel 01, a back plate 02 and a photosensitive module 03. The back plate 02 has a through hole 04, and the photosensitive module 03 corresponds to the through hole 04. In the direction perpendicular to the plane of the display panel 01, the portion of the display panel 01 corresponding to the through hole 04 is the photosensitive area 05 in the display area, and the area outside the photosensitive area 05 in the display area is the non-photosensitive area 06. The display panel 01 includes pixel circuits in which active layers of transistors are sensitive to light. The light emitted from the display panel 01 to the rear plate 02 is reflected by the rear plate 02 to the inside of the display panel 01. Due to the existence of the through holes 04, the reflectivity of the areas where the through holes 04 are located to the light is different from the reflectivity of the non-porous areas (the parts corresponding to the non-photosensitive areas 06) on the back plate 02 to the light, and the intensity of the reflected light which is emitted to the display panel 01 by the areas of the through holes 04 is different from the intensity of the reflected light which is emitted to the display panel 01 by the non-porous areas on the back plate 02. This causes a large difference between the characteristics of the transistors in the photosensitive region 05 and the characteristics of the transistors in the non-photosensitive region 06, resulting in display unevenness.
In order to solve the problems in the prior art, an embodiment of the present invention provides a display module, in which a reflection reducing layer is disposed in at least a portion of a display area, and the reflection reducing layer is located on a side of a pixel circuit layer away from a display surface. The reflection reducing layer is used for reducing reflection light emitted to the pixel circuit layer, so that the irradiation conditions of the transistors in the pixel circuit layer at different positions in the display area are basically the same, and the problem of uneven display is solved.
Fig. 2 is a schematic view of a display module according to an embodiment of the invention, and fig. 3 is a schematic cross-sectional view of a position of a tangent line a-a' in fig. 2. As shown in fig. 2, the display module includes a display area AA, the display area AA includes a first display area AA1 and a second display area AA2, and the second display area AA2 surrounds the first display area AA 1. In other embodiments, the second display area AA2 partially surrounds the first display area AA1, which is not illustrated in the figures herein.
When assembling into display device, set up the photosensitive module in the below corresponding with first display area AA1, can realize the scheme of photosensitive module under the screen. Wherein, the sensitization module can be for any one in camera, fingerprint identification module, the infrared induction module.
As shown in fig. 3, the display module includes a pixel circuit layer 10, a light emitting device layer 20, and an anti-reflection layer 30; the display module comprises a display surface M1, the display surface M1 can be understood as the surface of the display screen of the display module, and the user eyes are opposite to the display surface M1 when the user watches the display module. In some embodiments, the display panel includes a cover plate layer, the cover plate layer is located on a side of the light emitting device layer 20 away from the pixel circuit layer 10, and a surface of the cover plate layer away from the side of the light emitting device layer 20 is the display surface M1.
The light emitting device layer 20 is located on a side of the pixel circuit layer 10 close to the display surface M1, and the anti-reflection layer 30 is located on a side of the pixel circuit layer 10 far from the light emitting device layer 20, that is, the anti-reflection layer 30 is located on a side of the pixel circuit layer 10 far from the display surface M1. The light emitting device layer 20 includes a plurality of light emitting devices (not shown in fig. 3), which are organic light emitting diodes or inorganic light emitting diodes. In some embodiments, the light emitting device layer 20 includes an organic light emitting diode, and the display module further includes an encapsulation layer on a side of the light emitting device layer 20 away from the pixel circuit layer 10, the encapsulation layer being used for protecting the light emitting device.
The pixel circuit layer 10 includes a plurality of pixel circuits (not shown in fig. 3) for driving the light emitting devices to emit light. In fig. 3, a transistor T in a pixel circuit is schematically shown, the transistor T comprising an active layer w comprising a semiconductor material comprising any one of silicon and a metal oxide. The transistor T further includes a gate electrode, a source electrode, and a drain electrode, and a region overlapping the gate electrode in the active layer w forms a channel. The active layer w of the transistor T is sensitive to light, and the characteristic performance of the transistor T is affected after the light irradiates the active layer w.
The antireflection layer 30 has a function of transmitting light and reducing reflected light.
In an embodiment of the present invention, at least the first display area AA1 includes the antireflection layer 30. Wherein, in some embodiments, only first display area AA1 includes antireflection layer 30; in other embodiments, both first display area AA1 and second display area AA2 include anti-reflective layer 30.
Only the first display area AA1 including the antireflection layer 30 is illustrated in fig. 3. In some embodiments, the display module further includes a filling layer 35, and the filling layer 35 is located in the second display area AA 2. The filling layer 35 and the antireflection layer 30 are located at the same layer. In other words, the filling layer 35 and the antireflection layer 30 are located on the same horizontal plane when the display device is horizontally placed. When the antireflection layer 30 is disposed only in the first display area AA1, the antireflection layer 30 contacts the film in the display module on both sides of the plane where the antireflection layer 30 is located. The filling layer 35 is arranged to support the films on the two sides of the anti-reflection layer 30 in the second display area AA2, so that the bad influence on the performance of the display module caused by the cavity left in the display module is avoided. Wherein, the material of the filling layer 35 includes an organic material and/or an inorganic material.
Fig. 3 also illustrates a protection layer 40, where the protection layer 40 is located on a side of the pixel circuit layer 10 away from the light emitting device layer 20, and the protection layer 40 is used for buffering and protecting a film structure in the display module on a back side of the display module. The protection layer 40 includes an opening K corresponding to the first display area AA 1. When assembling into display device, set up sensitization module and trompil K and correspond, then the light that penetrates first display area AA1 shines sensitization module via trompil K, and the setting of trompil K can promote display module's luminousness.
When the display module displays, part of the light in the display module is emitted from the pixel circuit layer 10 in a direction away from the display surface M1, and the part of the light may be ambient light incident into the display module through the display surface M1, or light emitted by the light emitting device after being reflected and refracted inside the display module. The light emitted from the pixel circuit layer 10 in the direction away from the display surface M1 will be reflected and then return to the pixel circuit layer 10 when encountering other structural layers, where the other structural layers may be a substrate, a supporting layer, or the protective layer 40 illustrated in fig. 3, or a photosensitive module on the side of the pixel circuit layer 10 away from the display surface M1.
When the protection layer 40 is applied to the under-screen photo module scheme, the openings K shown in fig. 3 are formed in the protection layer 40, which causes a large difference in the amount of light reflected from the side of the pixel circuit layer 10 away from the display surface M1 to the pixel circuit layer 10 in the first display area AA1 and the second display area AA2, and thus causes a large difference in the characteristics of the transistors T in the pixel circuits in the first display area AA1 and the second display area AA2, which causes uneven display.
In the embodiment of the invention, the anti-reflection layer 30 is at least arranged in the first display area AA1, the anti-reflection layer 30 is located on the side of the pixel circuit layer 10 far away from the light-emitting device layer 20, the anti-reflection layer 30 has an effect of reducing reflected light, light emitted from the pixel circuit layer 10 in the direction away from the display surface M1 is reflected by other structural layers after passing through the anti-reflection layer 30, and the reflected light is re-emitted into the anti-reflection layer 30 and absorbed by the anti-reflection layer 30, so that the reflected light emitted to the pixel circuit layer 10 can be reduced, and the influence of the reflected light on the characteristics of the transistor T in the pixel circuit layer 10 can be reduced. When the scheme of the photosensitive module under the screen is applied, the difference between the characteristics of the transistors T in the two areas of the first display area AA1 and the second display area AA2 can be reduced, and the display unevenness is improved.
In some embodiments, FIG. 4 is another schematic cross-sectional view taken at line A-A' of FIG. 2. As shown in fig. 4, the second display area AA2 includes the reflection reduction layer 30, and the reflection reduction layer 30 located in the first display area AA1 and the reflection reduction layer 30 located in the second display area AA2 are integrated.
The antireflection layer 30 is disposed in each of the first display area AA1 and the second display area AA2, the antireflection layer 30 is disposed on the side of the pixel circuit layer 10 away from the display surface M1, the antireflection layer 30 is used to reduce the reflection light of the light emitted from the pixel circuit layer 10 to the side away from the display surface M1 and the reflection light of the light emitted from the pixel circuit layer 10 to the pixel circuit layer 10 is reduced by the same structure in the first display area AA1 and the second display area AA2, so that the influence of the reflection light on the characteristics of the transistor T in each of the first display area AA1 and the second display area AA2 is small. When the scheme of the photosensitive module under the screen is applied, the difference between the characteristics of the transistors T in the two areas of the first display area AA1 and the second display area AA2 is small, and uneven display is improved. In addition, the antireflection layer 30 is integrally provided in the two regions, so that the manufacturing process of the antireflection layer 30 can be simplified, and the problem of alignment between the antireflection layer 30 and the first display region AA1 does not need to be considered during manufacturing. Moreover, the anti-reflection layer 30 is an integral structure, which is also beneficial to the uniformity of the film thickness at each position of the display module.
In some embodiments, FIG. 5 is another schematic cross-sectional view taken at line A-A' of FIG. 2. As shown in fig. 5, the antireflection layer 30 includes a polarizer 31 and an 1/4 wave plate 32, and the polarizer 31 is located on the side of the 1/4 wave plate 32 close to the pixel circuit layer 10. The polarizing plate 31 can convert natural light into linearly polarized light; the 1/4 wave plate is a birefringent single crystal wave plate with a certain thickness, and can convert linearly polarized light into circularly polarized light or elliptically polarized light. Light emitted from the pixel circuit layer 10 to the side away from the display surface M1 is converted into linearly polarized light by the polarizing plate 31, the linearly polarized light is converted into circularly polarized light by the 1/4 plate 32, and the circularly polarized light is reflected to change its directivity, for example, the counterclockwise circularly polarized light is reflected to be converted into clockwise circularly polarized light. When the clockwise circularly polarized light passes through the 1/4-wave plate 32 again and then undergoes a half-circle phase shift, the circularly polarized light becomes linearly polarized light, and the polarization direction of the linearly polarized light at this time is the same as the direction of the absorption axis of the polarizer 31, the reflected light that has entered the polarizer 31 again from the 1/4-wave plate 32 is absorbed, and cannot be reflected back to the pixel circuit layer 10 via the polarizer 31. The polarizer 31 and the 1/4 wave plate 32 are provided on the side of the pixel circuit layer 10 away from the display surface M1, and the polarizer 31 and the 1/4 wave plate 32 cooperate with each other to reduce the reflectance of light emitted from the pixel circuit layer 10 toward the side away from the display surface M1. When the reflection reducing layer 30 is provided only in the first display area AA1, the reflection reducing layer 30 can effectively reduce the reflectance of the light emitted from the pixel circuit layer 10 in the first display area AA1 in the direction away from the display surface M1 and reflected back to the pixel circuit layer 10, thereby reducing the difference between the influences of the reflected light on the transistor characteristics in the two areas of the first display area AA1 and the second display area AA 2; when the first display area AA1 and the second display area AA2 both include the antireflection layer 30, the same structure is used in the first display area AA1 and the second display area AA2 to reduce the reflectance of light on the side of the pixel circuit layer 10 away from the display surface M1, so that the influence of reflected light in both areas on the characteristics of the transistor T is small. When the scheme of the photosensitive module under the screen is applied, the difference between the characteristics of the transistors T in the two areas of the first display area AA1 and the second display area AA2 can be reduced, and the display unevenness is improved. Meanwhile, the polarizer 31 and the 1/4 wave plate 32 are matched to form the anti-reflection layer 30, so that the light transmittance of the first display area AA1 of the display module can be ensured, and the optical performance of the photosensitive module is ensured.
In some embodiments, FIG. 6 is another schematic cross-sectional view taken at line A-A' of FIG. 2. As shown in fig. 6, the display module further includes a substrate 50, where the substrate 50 is located on a side of the pixel circuit layer 10 away from the light emitting device layer 20; the anti-reflection layer 30 is located between the pixel circuit layer 10 and the substrate 50. The substrate 50 may be a rigid substrate or a flexible substrate, among others.
The substrate 50 is a carrier base for manufacturing other structures such as the pixel circuit layer 10, and when manufacturing, the substrate 50 is provided first, then the antireflection layer 30 is manufactured on one side of the substrate 50, and then the structures such as the pixel circuit layer 50 and the light-emitting device layer 20 are manufactured on one side of the antireflection layer 30 away from the substrate 50. The antireflection layer 30 is formed on the side of the pixel circuit layer 10 far from the display surface M, and the antireflection layer 30 is used to reduce the reflectivity of the light emitted from the pixel circuit layer 10 to the side far from the display surface M1 and reflected back to the pixel circuit layer 10, so as to reduce the difference between the influences of the reflected light on the characteristics of the transistor T in the two areas, namely the first display area AA1 and the second display area AA 2. When the scheme of the photosensitive module is applied to the screen, the display unevenness can be improved.
Only the first display area AA1 including the antireflection layer 30 is illustrated in fig. 6. In some embodiments, the second display area AA2 and the first display area AA1 both include the antireflection layer 30, and the same structure is used in the first display area AA1 and the second display area AA2 to reduce the reflectance, so that the influence of the reflected light on the characteristics of the transistor T is small in both the first display area AA1 and the second display area AA 2. The display device is applied to the scheme of the photosensitive module under the screen, and uneven display can be improved.
In some embodiments, a buffer layer is also disposed between the substrate 50 and the pixel circuit layer 10. The buffer layer is located between the antireflective layer 30 and the substrate 50, or the buffer layer is located on a side of the antireflective layer 30 away from the substrate 50.
In other embodiments, FIG. 7 is another cross-sectional view taken at line A-A' of FIG. 2. As shown in fig. 7, a substrate 50 is located on a side of the pixel circuit layer 10 away from the light emitting device layer 20, the substrate 50 including the anti-reflection layer 30. The substrate 50 includes a first base layer 51 and a second base layer 52 stacked, and the antireflection layer 30 is located between the first base layer 51 and the second base layer 52. In some embodiments, the first and second substrate layers 51, 52 are made of the same material. Optionally, the first and second substrate layers 51 and 52 each comprise a polymer material, such as polyimide, polyethylene, or the like.
The substrate 50 as shown in fig. 7 further includes a first buffer layer 53 located between the first and second base layers 51 and 52. Alternatively, the first buffer layer 53 may include at least one of a-Si, SiNx, SiOx, and SiNO. The anti-reflection layer 30 is illustrated in fig. 7 on a side of the first buffer layer 53 close to the pixel circuit layer 10, and in other embodiments, the anti-reflection layer 30 is disposed on a side of the first buffer layer 53 away from the pixel circuit layer 10, for example, the anti-reflection layer 30 is disposed between the first buffer layer 53 and the second substrate layer 52, which is not illustrated in the drawings. It is understood that the substrate 50 may also include additional film layers, and the antireflective layer 30 may be disposed between any adjacent film layers of the substrate 50.
Fig. 7 illustrates that the first display area AA1 and the second display area AA2 both include the anti-reflection layer 30, and the same structure is used in the first display area AA1 and the second display area AA2 to reduce the reflectance, so that the influence of the reflected light on the characteristics of the transistor T in the first display area AA1 and the second display area AA2 is small, and the display unevenness can be improved. In addition, the anti-reflection layer 30 in the first display area AA1 and the anti-reflection layer 30 in the second display area AA2 are integrated, so that the substrate 50 can provide a relatively flat base for the fabrication of the pixel circuit layer 10, the characteristic difference between the transistors T fabricated at different positions can be reduced, and the display uniformity can be improved.
In other embodiments, the reflection reducing layer 30 is disposed in the substrate 50, and the reflection reducing layer 30 is disposed only at a position corresponding to the first display area AA1, so that the reflection of the light emitted from the pixel circuit layer 10 in the first display area AA1 in a direction away from the display surface M1 and reflected back to the pixel circuit layer 10 can be reduced by the reflection reducing layer 30, thereby reducing the difference between the influences of the reflected light on the transistor characteristics in the two areas of the first display area AA1 and the second display area AA2, and improving the display unevenness.
In other embodiments, FIG. 8 is another cross-sectional view taken at line A-A' of FIG. 2. As shown in fig. 8, the anti-reflection layer 30 is located on a side of the substrate 50 away from the pixel circuit layer 10. The substrate 50 can be used as a base for forming the pixel circuit layer 10 during the manufacture of the display module, and after the pixel circuit layer 10 and the light-emitting device layer 20 are formed on one side of the substrate 50, the antireflection layer 30 is formed on the side of the substrate 50 away from the display surface M1. The anti-reflection layer 30 can improve the display unevenness of the display region, and the manufacture of the anti-reflection layer 30 has no influence on the substrate 50, the pixel circuit layer 10 and other process.
As shown in fig. 8, the protective layer 40 is located on the side of the substrate 50 away from the pixel circuit layer 10; the opening K of the protective layer 40 overlaps the first display area AA1 in the direction e perpendicular to the plane of the substrate 50. In some embodiments, the protective layer 40 includes a foam layer and a heat sink functional layer. The heat dissipation function layer is a copper foil layer or a graphene layer.
In other embodiments, FIG. 9 is another cross-sectional view taken at line A-A' of FIG. 2. As shown in fig. 9, the protective layer 40 includes a light absorbing layer 41, and the light absorbing layer 41 is a film layer on the side of the protective layer 40 close to the substrate. The light absorbing layer 41 has a function of absorbing light, and can absorb light emitted from the pixel circuit layer 10 to the side away from the display surface M1, thereby further reducing the reflectance of the light, and reducing the influence of the reflected light on the characteristics of the transistor T in the pixel circuit layer 10.
In other embodiments, FIG. 10 is another cross-sectional view taken at line A-A' of FIG. 2. As shown in fig. 10, the display module further includes a support layer 60, and the support layer 60 is located between the substrate 50 and the protective layer 40. The support layer 60 can serve as a support and protection on the side of the substrate 50 away from the display surface M1.
As shown in fig. 10, the antireflection layer 30 is located on a side of the support layer 60 away from the substrate 50. The light emitted from the pixel circuit layer 10 to the side away from the display surface M1 passes through the substrate 50 and then sequentially enters the support layer 60 and the antireflection layer 30. The antireflection layer 30 is used to reduce the reflectance of light, thereby reducing the amount of reflected light from the substrate 50 side toward the pixel circuit layer 10, and at least reducing the influence of the reflected light on the characteristic performance of the transistor T in the first display area AA 1. So that there is no great difference between the characteristics of the transistors T in the first display area AA1 and the second display area AA2, thereby improving display unevenness.
Light rays emitted from the pixel circuit layer 10 to the side away from the display surface M1 first enter the support layer 60 and then enter the antireflection layer 30 from the support layer 60. Light is reflected and refracted at the interface where the antireflection layer 30 and the support layer 60 contact each other. The refractive index of the support layer 60 is n1, the refractive index of the antireflection layer 30 is n2, and the incident angle is i1Angle of refraction i2. According to the Fresnel formula, the following results are obtained:
reflection coefficient n1cosi1-n2cosi2/n1cosi1+n2cosi2；
Refractive index of 2n1cosi1/n1cosi1+n2cosi2。
The refractive index of the antireflection layer 30 is 1.8, and the refractive index of the support layer 60 is 1.65. When the angle between the light ray and the normal is 60 deg., the reflectance of the light ray at the interface where the antireflection layer 30 and the support layer 60 contact each other is only 12%, and most of the light enters the antireflection layer 30. When the antireflection layer 30 includes the polarizer 31 and the 1/4 wave plate 32, most of the light entering the antireflection layer 30 is reflected back to the antireflection layer 30 and then absorbed by the antireflection layer 30. Also, the lower the angle between the light ray and the normal, the lower the reflectivity of the light ray at the interface where the antireflection layer 30 and the support layer 60 contact each other, the more light is absorbed by the antireflection layer 30.
In some embodiments, the antireflection layer 30 has a refractive index greater than that of the support layer 60, which can reduce the reflectivity of light at the interface where the antireflection layer 30 and the support layer 60 contact each other, and is beneficial for reducing the reflected light to the pixel circuit layer 10 and reducing the influence of the reflected light on the characteristics of the transistor T. The light refracted by the support layer 60 and entering the antireflection layer 30 is absorbed by the antireflection layer 30 when it exits the antireflection layer 30 and is reflected back to the antireflection layer 30, and the reflected light is further reduced by the antireflection layer 30. In this embodiment, the antireflection layer 30 is provided on the side of the support layer 60 away from the substrate 50, and the refractive index of the antireflection layer is matched with that of the support layer 60, so that the reflected light to the pixel circuit layer 10 can be greatly reduced, and the influence of the reflected light on the characteristic performance of the transistor T in the pixel circuit layer 10 can be reduced. Fig. 10 shows that the first display area AA1 and the second display area AA2 both include the anti-reflection layer 30, and the same structure is used in the first display area AA1 and the second display area AA2 to reduce the reflectivity of the pixel circuit layer 10 on the side away from the display surface M1, so that the influence of the reflected light in the two areas on the characteristics of the transistor T is small, and the characteristics of the transistor T in the two areas do not have a large difference, thereby improving the problem of display unevenness.
In other embodiments, the antireflection layer 30 is only disposed in the first display area AA1, the antireflection layer 30 is disposed on the side of the support layer 60 away from the substrate 50, and the refractive index of the antireflection layer is matched with that of the support layer 60, so that the reflected light to the pixel circuit layer 10 can be greatly reduced, and the influence of the reflected light on the characteristic performance of the transistor T in the pixel circuit layer 10 can be reduced. Therefore, the difference in characteristics of the transistor T between the first display area AA1 and the second display area AA2 is reduced, and display unevenness is improved.
In other embodiments, the anti-reflection layer 30 is located on a side of the support layer 60 close to the substrate 50, and is not illustrated here.
In other embodiments, FIG. 11 is another cross-sectional view taken at line A-A' of FIG. 2. As shown in fig. 11, the antireflection layer 30 is located in the opening K of the protective layer 40. The first display area AA1 includes the reflection reducing layer 30, and the reflection reducing layer 30 can reduce the reflectivity of the light emitted from the pixel circuit layer 10 in the direction away from the display surface M1 and reflected back to the pixel circuit layer 10, so as to reduce the difference between the influences of the reflected light on the transistor characteristics in the two areas of the first display area AA1 and the second display area AA2, and improve the display unevenness. By providing the antireflection layer 30 in the opening K of the protective layer 40, the influence of the antireflection layer 30 on the thickness of the module can be reduced.
Fig. 12 is a schematic view of a display device according to an embodiment of the present invention, and as shown in fig. 12, the display device includes the display module 100 according to any embodiment of the present invention, and further includes a photosensitive module 200, where the photosensitive module 200 overlaps with the first display area AA1 in a plane direction e perpendicular to the display surface M1. The structure of the display module 100 is already described in the above embodiments, and is not described herein again. The display device provided by the embodiment of the invention is any equipment with a display function, such as a mobile phone, a tablet computer, a notebook computer, an electronic book, a television, an intelligent watch and the like.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (13)
1. The display module is characterized by comprising a pixel circuit layer, a light-emitting device layer and an antireflection layer; the display module comprises a display surface, the light-emitting device layer is positioned on one side, close to the display surface, of the pixel circuit layer, and the anti-reflection layer is positioned on one side, far away from the light-emitting device layer, of the pixel circuit layer;
the display area of the display module comprises a first display area and a second display area, the second display area at least partially surrounds the first display area, and at least the first display area comprises the antireflection layer.
2. The display module of claim 1,
the antireflection layer comprises a polaroid and an 1/4 wave plate, wherein the polaroid is positioned on one side of the 1/4 wave plate close to the pixel circuit layer.
3. The display module of claim 1,
the display module further comprises a substrate, wherein the substrate is positioned on one side of the pixel circuit layer, which is far away from the light-emitting device layer; the anti-reflection layer is located between the pixel circuit layer and the substrate.
4. The display module of claim 1,
the display module further comprises a substrate, wherein the substrate is positioned on one side of the pixel circuit layer, which is far away from the light-emitting device layer; the substrate includes the antireflective layer.
5. The display module of claim 1,
the display module further comprises a substrate, wherein the substrate is positioned on one side of the pixel circuit layer, which is far away from the light-emitting device layer; the antireflection layer is positioned on one side of the substrate far away from the pixel circuit layer.
6. The display module of claim 5,
the display module further comprises a protective layer, and the protective layer is positioned on one side of the substrate far away from the pixel circuit layer;
the protective layer is provided with an opening, and the opening is overlapped with the first display area in the direction perpendicular to the plane of the substrate.
7. The display module of claim 6,
the protective layer comprises a light absorption layer, and the light absorption layer is a film layer which is close to one side of the substrate in the protective layer.
8. The display module of claim 6,
the display module further comprises a supporting layer, and the supporting layer is located between the substrate and the protective layer.
9. The display module of claim 8,
the antireflection layer is positioned on one side of the supporting layer far away from the substrate.
10. The display module of claim 9,
the antireflection layer has a refractive index larger than that of the support layer.
11. The display module of claim 6,
the anti-reflection layer is positioned in the open hole.
12. The display module of claim 1,
the second display area comprises the antireflection layer, and the antireflection layer positioned in the first display area and the antireflection layer positioned in the second display area are of an integral structure.
13. A display device, comprising the display module according to any one of claims 1 to 12, wherein the display device further comprises a photosensitive module, and the photosensitive module overlaps with the first display area in a direction perpendicular to a plane of the display surface.
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