CN114420852A - Preparation method of pure-phase RP perovskite film - Google Patents
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Abstract
The invention relates to a preparation method of a pure-phase RP perovskite film. After preparing a mixed solution of lead halide and halogenated organic ammonium salt, processing a perovskite film precursor film deposited on a substrate by using low-pressure auxiliary treatment to form a well-crystallized intermediate phase film, and then heating to form a pure-phase RP perovskite film. The invention has low cost and is compatible with the preparation of large-area films, and the obtained perovskite film can be used for various photoelectric devices such as solar cells, photoelectric detectors, light-emitting diodes, X-ray detectors and the like, and has wide application prospect.
Description
Technical Field
The invention belongs to the field of novel semiconductor photoelectricity, and particularly relates to a method for converting two-dimensional perovskites containing different n values into pure-phase Ruddlesden-Popper (RP) perovskites by utilizing solvent engineering and additive engineering combined with low-voltage auxiliary treatment. The perovskite film prepared by the method can be used for various photoelectric devices such as solar cells, photoelectric detectors, light-emitting diodes, X-ray detectors and the like.
Background
With the development of science and technology, the problems of environmental deterioration and energy crisis become more serious, which puts new requirements on the utilization of energy by human beings, and the development of the photoelectric field brings new hopes to human beings. In recent years, three-dimensional perovskite materials have been widely studied due to excellent photoelectric properties such as high light absorption coefficient, adjustable band gap, high carrier mobility, and the like, but the problem of poor stability limits the deep development of the materials in the photoelectric field. The two-dimensional perovskite is widely concerned as a novel photoelectric material by virtue of good stability and excellent photoelectric characteristics, and the research on the structure and the properties of the two-dimensional perovskite material has great significance for developing perovskite photoelectric devices with high stability and high photoelectric conversion efficiency.
Currently, the certified photoelectric conversion efficiency of organic-inorganic hybrid perovskite photoelectric devices reaches 25.7%, which is comparable to the efficiency of single crystal silicon batteries, but perovskite is easily degraded under the influence of external environments such as water, oxygen, temperature, illumination and other conditions due to the intrinsic instability of the structure, thereby influencing the practical application of perovskite photoelectric devices. Two-dimensional perovskites are of great interest because of their excellent optoelectronic properties and good stability. A plurality of photoelectric devices such as solar cells, photoelectric detectors, LEDs and the like are designed and manufactured on the basis of two-dimensional perovskite by combining solvent engineering and additive engineering, and the design and the manufacture are inevitable choices for the development of two-dimensional perovskite technology. In contrast to three-dimensional perovskites, two-dimensional perovskite layered structures relax the size requirements for organic cations, allow insertion of large organic cations into the inorganic layer, and thus many cations can be selected and specific properties and functions can be obtained by designing the components. The two-dimensional perovskite not only has the characteristics of solution-soluble processing, flexibility, wearability, low price, easy preparation and the like of a two-dimensional material, but also has the characteristics of high crystallinity, high carrier mobility, low exciton confinement energy, high quantum efficiency, wide absorption spectrum, high light absorption coefficient, low energy consumption loss and the like of the perovskite material, so that the two-dimensional perovskite material is widely applied to the field of solar photovoltaic power generation.
In recent years, although many encouraging advances have been made in the field of two-dimensional perovskite photovoltaics, the problem of difficulty in generating pure phase perovskites remains a significant challenge. The structural general formula of two-dimensional perovskite represented by RP phase is A2Bn- 1PbnI3n+1In the case of preparing a two-dimensional perovskite thin film based on the solution method, although each component is calculated in terms of a stoichiometric ratio at a certain value of n, the poor thermodynamic stability of the perovskite phase having a large value of n makes it difficult to form a pure-phase perovskite, i.e., a phase containing different values of n in the prepared two-dimensional perovskite. The distribution of each n value in the perovskite can influence the transportation and recombination of current carriers and seriously influence the performance of the device. Therefore, it is very important to provide a preparation method of pure RP phase perovskite thin film.
Disclosure of Invention
The invention aims to provide a preparation method of a pure RP phase perovskite film, aiming at the problem that the existing two-dimensional RP phase perovskite is difficult to generate a pure phase. After preparing a mixed solution of lead halide and halogenated organic ammonium salt, processing a perovskite film precursor film deposited on a substrate by using low-pressure auxiliary equipment to form a well-crystallized intermediate phase film, and then heating to form a pure-phase RP perovskite film. The invention has low cost and is compatible with the preparation of large-area films, and the obtained perovskite film can be used for various photoelectric devices such as solar cells, photoelectric detectors, light-emitting diodes, X-ray detectors and the like, and has wide application prospect.
The technical scheme of the invention is as follows:
a method for preparing a pure-phase RP perovskite thin film comprises the following steps:
step 1: lead iodide PbI2Dissolving an iodinated organic ammonium salt AI and formamidine iodine FAI into a solvent, and then adding an additive to obtain an RP phase perovskite precursor solution;
wherein the molar ratio is-iodinationLead: iodinated organic ammonium salts: formamidine iodide: additive 1: 0.1-1: 0.05-0.5: 0.1 to 1; pb in the precursor solution2+The concentration of (A) is 0.05-2 mol/L;
the additive is chloride or fluoride;
step 2: coating a precursor solution on a substrate by using rotary coating equipment to obtain a perovskite film;
wherein each 1-10 cm2Coating 10-100 mul of precursor solution on the substrate;
the rotating speed of the rotary coating equipment is 1500-8000 rmp, the rotating time is 5-30 s, the ambient temperature is 1-50 ℃, and the ambient relative humidity is 30-90%;
and step 3: carrying out low-pressure treatment on the perovskite thin film deposited on the substrate by using low-pressure auxiliary equipment, and then annealing by using constant-temperature heating equipment to obtain the RP phase perovskite A2(FA)Pb2I7I.e. a pure phase RP perovskite thin film;
the structural general formula of the RP phase perovskite is A2(FA)Pb2I7Wherein A is an organic cation, FA+Is a formamidine cation.
Wherein the vacuum degree of the low-pressure auxiliary equipment during treatment is 1-100 Pa, and the treatment time is 1-60 s.
The annealing temperature is 50-200 ℃, and the annealing time is 1-60 min.
In the iodinated organic ammonium salt AI, A is organic cation dimethylamine ion (DMA)+) Ethylamine ion (EA)+) Mercaptoethylamine ion (ESA)+) Ethanolamine ion (EOA)+) Propylamine ion (PA)+) Isopropylamine Ion (iPA)+) Cyclopropylamine ion (CyPA)+) Butylamine ion (BA)+) Isobutylamine Ion (iBA)+) T-butylamine ion (t-BA)+) Pentamine ion (Penta)+) Phenylamine ion (PhA)+) Methoxy phenethylamine ion (2-MeOPEA)+) Trifluoroethylamine ion (F)3EA+) Trifluoromethylaniline ion (CF)3PhA+) Trifluoromethylbenzenemethanamine ion (CF)3PMA+) Trifluoromethyl phenethylamine (CF)3PEA+) Pyridine methylamine ion (PyA)+) 3-dimethylamino-1-propylamine ion (3-Me2 PDA)+) Diethylamine ion (DEA)+) Benzylamine ion (PMA)+) Phenethylamine ion (PEA)+) P-fluorophenylethylamine ion (p-F-PEA)+) M-fluorophenylethylamine ion (m-F-PEA)+) O-fluorophenylethylamine ion (o-F-PEA)+) Phenylalanyl amine ion (PPA)+) Phenylbutylamine ion (PhBA)+) 4-tert-butylaniline ion (tBPA)+) 4-tert-butylbenzylmethylamine ion (tBBA)+) One or more of (a).
The chloride additive in the step 1 is at least one of ammonium chloride, methyl ammonium chloride, formamidine hydrochloride, ethyl ammonium chloride, propyl ammonium chloride and butyl ammonium chloride, and the fluoride is at least one of ammonium fluoride, lithium fluoride, sodium fluoride, potassium fluoride and cesium fluoride.
The solvent comprises at least one of Dimethylformamide (DMF), dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP) and dimethylacetamide (DMAc).
The substrate in the step 2 is SnO doped with fluorine2Conductive glass (FTO), indium tin oxide transparent conductive film glass (ITO), PET/ITO (PET is polyethylene terephthalate), PEN/ITO (PEN is polyethylene naphthalate) or metal sheets.
The pure-phase RP perovskite thin film can be used for various photoelectric devices such as photovoltaic devices (including indoor photovoltaic devices and semitransparent photovoltaic devices), photoelectric detectors (photovoltaic type and photoconductive type), light-emitting diodes, X-ray detectors and the like.
The invention has the substantive characteristics that:
in the prior art, pure phase A2(FA)Pb2I7No report is found. The invention adds fluoride or chloride as additive into the precursor liquid through adjusting the components of the precursor liquid and controlling the preparation conditions, wherein chloride ions or fluoride ions can be induced to form [ PbX ]6]4-(X is Cl or F), [ PbX [ ]6]4-Capable of suppressing three-dimensional perovskitesGenerating; the preparation condition is controlled to inhibit the generation of three-dimensional phase, the solvent is uniformly evaporated in the crystallization process by combining the low-pressure auxiliary and annealing auxiliary solvent method to generate compact large-size crystal grains, a two-dimensional perovskite thin film with good phase distribution and high crystallinity is obtained, and finally pure phase A is prepared2(FA)Pb2I7A film.
The invention has the advantages that
1. The preparation method of the pure-phase RP perovskite film provided by the invention is simple and feasible, has low cost, and can be applied to large-area film preparation;
2. the method can realize the conversion of the perovskite containing different n values into pure-phase Ruddlesden-Popper (RP) perovskite by controlling the components and the solvent of the perovskite precursor liquid and adjusting the parameters of the preparation conditions, and has wide application prospect in the aspects of photovoltaic devices, photoelectric detectors, light emitting diodes, X-ray detectors and the like.
3. The pure-phase RP perovskite thin film prepared by the method has good environmental stability, and the crystal structure of the pure-phase RP perovskite thin film still keeps unchanged after 30 days (shown in figure 5) at room temperature.
Drawings
FIG. 1 is a schematic diagram of a process for preparing a perovskite thin film according to example 1 of the present invention.
FIG. 2 is an X-ray diffraction pattern of the perovskite thin film of example 1.
FIG. 3 is an SEM image of the perovskite thin film of example 1.
FIG. 4 is an ultraviolet-visible absorption spectrum of the perovskite thin film of example 1.
FIG. 5 is an X-ray diffraction pattern of the perovskite thin film prepared in example 1 in an initial state and after being left for 30 days
FIG. 6 is an X-ray diffraction pattern of the perovskite thin film of comparative example 1.
Fig. 7 is an ultraviolet-visible absorption spectrum of the perovskite thin film of comparative example 1.
FIG. 8 is an X-ray diffraction pattern of the perovskite thin film of comparative example 2.
Detailed Description
The present invention will be further described with reference to the following examples.
The preparation process of the perovskite thin film of the invention is shown in figure 1. After preparing a mixed precursor solution of lead halide and halogenated organic ammonium salt, spin-coating the mixed precursor solution on a substrate, processing a perovskite thin film precursor film deposited on the substrate by using low-pressure auxiliary equipment to form a well-crystallized intermediate phase thin film, and then heating to form a pure-phase RP perovskite thin film.
Example 1.
Pure RP phase Perovskite (PEA)2FAPb2I7Preparation of films
The preparation process is shown in figure 1 and comprises the following steps:
step 1: 0.4610g (1.0mmol) of PbI20.2490g (1.0mmol) of PEAI (C)6H5CH2CH2NH3I) 0.0860g (0.5mmol) of FAI (HC (NH)2)2I) Dissolved in 1ml of a mixed solution of DMF and NMP, and 0.0236g (0.35mmol) of methyl ammonium chloride (MACl) was added as an additive, wherein the volume ratio of DMF to NMP was 9:1, to prepare a perovskite precursor solution with a concentration of 1 mol/L.
Step 2: using a spin coating apparatus (KW-4A type bench spin coater), on an ITO substrate (area 4 cm)2) And depositing a precursor solution. Wherein the rotating speed of the rotary coating equipment is 4000rpm, the rotating time is 10s, the volume of the perovskite precursor for each spin coating is 50 mu l, the temperature is controlled at 22 ℃ in the spin coating process, and the humidity is controlled at 60%.
And step 3: and (3) carrying out low-pressure treatment on the perovskite thin film deposited on the substrate by using low-pressure auxiliary equipment (a DL-10A type quartz vacuum gauge and a vacuum pump), and then annealing by using constant-temperature heating equipment (a heating table) to obtain the pure-phase RP perovskite thin film. Wherein the vacuum degree of the low-pressure auxiliary equipment is 10Pa, the time of the low-pressure treatment is 60s, the annealing temperature of the heating table is 100 ℃, and the annealing time is 15 min. And respectively carrying out X-ray diffraction analysis, SEM surface morphology analysis and absorption spectrum analysis on the obtained perovskite film. The X-ray diffraction results are shown in FIG. 2, from which it can be seen that the films prepared were at 4 °, 8 °, 1Diffraction peaks of two-dimensional perovskite appear near 2 degrees, 16 degrees and the like, all correspond to (0k0) crystal face, and pure Phase (PEA) is proved2FAPb2I7And (4) successfully preparing the film. The SEM results are shown in FIG. 3, from which it can be seen that the films produced exhibit lamellar behavior, again demonstrating that we produced lamellar pure Phases (PEAs)2FAPb2I7A film. The results of the absorption spectra are shown in FIG. 4, from which it can be seen that the prepared film has only one distinct absorption edge and one exciton absorption peak, again demonstrating that the film we prepared contains only (PEA)2FAPb2I7Such a phase. The prepared sample is placed in the air, an X-ray diffractometer is used for carrying out stability test on the film after 30 days, the test result is shown in figure 5, and it can be seen from the figure that the X-ray diffraction result of the film prepared by the inventor is still consistent with that of the film prepared initially after the film prepared by the inventor is placed in the air for more than 30 days, and the film prepared by the inventor is proved to have good stability.
Example 2.
Pure RP phase Perovskite (PMA)2FAPb2I7Preparation of films
In contrast to example 1, the solute in the perovskite precursor was 0.461g (1.0mmol) of PbI20.233g (1.0mmol) of PMAI (C)7H8IN), 0.0860g (0.5mmol) of FAI (HC (NH)2)2I) Was dissolved in 1ml of a mixed solution of DMF and NMP (DMF: NMP ═ 9:1), and 0.0236g (0.35mmol) of methylammonium chloride (MACl) was added as an additive.
Example 3.
Pure RP phase perovskite (BA)2FAPb2I7Preparation of films
In contrast to example 1, the solute in the perovskite precursor was 0.4610g (1.0mmol) of PbI20.201g (1.0mmol) of BAI (CH)3CH2CH2NH3I) 0.0860g (0.5mmol) of FAI (HC (NH)2)2I) Was dissolved in 1ml of a mixed solution of DMF and NMP (DMF: NMP ═ 9:1), and 0.0236g (0.35mmol) of methylammonium chloride (MACl) was added as an additive.
Example 4.
Pure RP phase Perovskite (PA)2FAPb2I7Preparation of films
In contrast to example 1, the solute in the perovskite precursor was 0.4610g (1.0mmol) of PbI20.187g (1.0mmol) of PAI (CH)3CH2CH2NH3I) 0.0860g (0.5mmol) of FAI (HC (NH)2)2I) Was dissolved in 1ml of a mixed solution of DMF and NMP (DMF: NMP ═ 9:1), and 0.0268g (0.4mmol) of methylammonium chloride (MACl) was added as an additive.
Example 5.
Pure RP phase perovskite (tBBA)2FAPb2I7Preparation of films
In contrast to example 1, the solute in the perovskite precursor was 0.4610g (1.0mmol) of PbI20.276g (1.0mmol) of tBBAI (4-tert-butylbenzylamine iodine), 0.0860g (0.5mmol) of FAI (HC (NH)2)2I) Was dissolved in 1ml of a mixed solution of DMF and NMP (DMF: NMP ═ 9:1), and 0.0268g (0.4mmol) of methylammonium chloride (MACl) was added as an additive.
Example 6.
Pure RP phase perovskite (iBA)2FAPb2I7Preparation of films
In contrast to example 1, the solute in the perovskite precursor was 0.4610g (1.0mmol) of PbI20.201g (1.0mmol) of iBAI (CH)3)2CH2NH3I) 0.0860g (0.5mmol) of FAI (HC (NH)2)2I) Was dissolved in 1ml of a mixed solution of DMF and NMP (DMF: NMP ═ 9:1), and 0.0268g (0.4mmol) of methylammonium chloride (MACl) was added as an additive.
Comparative example 1.
RP phase Perovskite (PEA)2FAPb2I7Preparation of films
In contrast to example 1, the solute in the perovskite precursor was 0.461g (1.0mmol) of PbI20.2490g (1.0mmol) of PEAI (C)6H5CH2CH2NH3I) 0.0860g (0.5mmol) of FAI (HC (NH)2)2I) Dissolved in 1ml of a mixed solution of DMF and NMP (DMF: NMP ═ 9:1), without any additives.
Comparative example 2.
RP phase Perovskite (PEA)2FAPb2I7Preparation of films
In contrast to comparative example 1, an ITO substrate (area 4 cm) was coated with a spin coating apparatus (model KW-4A desk top spin coater)2) And depositing a precursor solution. Wherein the rotating speed of the rotary coating equipment is 4000rpm, the rotating time is 10s, the volume of the perovskite precursor for each spin coating is 50 mu l, the temperature is controlled at 22 ℃ in the spin coating process, and the humidity is controlled at 20%.
The XRD result of the comparative example 1 is shown in figure 6, and as can be seen from the figure, the prepared film has diffraction peaks of two-dimensional perovskite near 4 degrees, 8 degrees, 12 degrees, 16 degrees and the like, which correspond to (0k0) crystal planes, but the diffraction peaks are wide, the diffraction peaks of one-dimensional perovskite near 5.5 degrees, 11 degrees, 16.5 degrees and 22 degrees, which correspond to (00k) crystal planes, and the diffraction peaks of three-dimensional perovskite near 14 degrees, and the XRD result shows that the obtained perovskite film has fine crystal grains, poor crystallinity and low phase purity; the results of the absorption spectra are shown in FIG. 7, from which it can be seen that the prepared film contains a plurality of absorption peaks, corresponding to the multiphase structure of the film, indicating that the prepared film has a low phase purity. The XRD result of comparative example 2 is shown in fig. 8, which shows that when the ambient relative humidity is low, significant diffraction peaks of one-dimensional and three-dimensional perovskites appear, while the intensity of the diffraction peak of one-dimensional perovskites decreases and the intensity of the diffraction peak of two-dimensional perovskites increases after the ambient relative humidity is increased, indicating that increasing the ambient humidity has the effect of inhibiting the formation of one-dimensional and three-dimensional perovskite phases, which is beneficial to improving the phase purity of the two-dimensional perovskite thin film.
Therefore, the invention adjusts the mixture ratio of the solvent to PbI by adjusting the components of the precursor solution and controlling the preparation conditions2Forming a solvent compound to slow the crystallization rate of the perovskite; MACl is added into the precursor liquid as an additive, and chloride ions compete with iodide ions for Pb2+Coordination sites of [ PbCl ], induced formation of [ PbCl ]6]4-，[PbCl6]4-The generation of three-dimensional perovskite can be inhibited; the preparation conditions are controlled to increase the relative humidity of the environment, so that the generation of a three-dimensional perovskite phase can be inhibited, and the phase purity of the film is further improved; the annealing temperature and time are controlled by combining the low-pressure assistance and the annealing auxiliary solvent method, so that the solvent can be uniformly evaporated in the crystallization process, compact large-size crystal grains are generated, and the pure phase A is finally prepared2(FA)Pb2I7The film added with MACl has good crystallinity and excellent stability. The pure phase perovskite film obtained by the invention can be widely applied to various photoelectric devices such as photoelectric detectors (photovoltaic type and photoconductive type), light emitting diodes, X-ray detectors and the like, and the stability and other photoelectric properties of the devices are improved.
In conclusion, the preparation method of the pure-phase RP perovskite film provided by the invention is simple and feasible, has low cost and can be used for large-scale production; meanwhile, an electronic device with good quality and excellent performance is obtained, the pure-phase RP perovskite thin film can be used for various photoelectric devices such as photoelectric devices (including indoor photovoltaic devices and semitransparent photovoltaic devices), photoelectric detectors (photovoltaic type and photoconductive type), light-emitting diodes and X-ray detectors, and an effective method is provided for realizing large-scale industrial production of high-performance perovskite photoelectric devices.
The invention is not the best known technology.
Claims (7)
1. A method for preparing a pure-phase RP perovskite thin film is characterized by comprising the following steps:
step 1: lead iodide PbI2Dissolving an iodinated organic ammonium salt AI and formamidine iodine FAI into a solvent, and then adding an additive to obtain an RP phase perovskite precursor solution;
wherein, the molar ratio is that lead iodide: iodinated organic ammonium salts: formamidine iodide: additive 1: 0.1-1: 0.05-0.5: 0.1 to 1; pb in the precursor solution2+The concentration of (A) is 0.05-2 mol/L;
the additive is chloride or fluoride;
step 2: coating a precursor solution on a substrate by using rotary coating equipment to obtain a perovskite film;
wherein each 1-10 cm2Coating 10-100 mul of precursor solution on the substrate;
and step 3: carrying out low-pressure treatment on the perovskite thin film deposited on the substrate by using low-pressure auxiliary equipment, and then annealing by using constant-temperature heating equipment to obtain the RP phase perovskite A2(FA)Pb2I7I.e. a pure phase RP perovskite thin film;
the structural general formula of the RP phase perovskite is A2(FA)Pb2I7Wherein A is an organic cation, FA+Is a formamidine cation;
wherein the vacuum degree of the low-pressure auxiliary equipment during treatment is 1-100 Pa, and the treatment time is 1-60 s;
the annealing temperature is 50-200 ℃, and the annealing time is 1-60 min.
2. The method of claim 1, wherein A is dimethylamine ion (DMA) in said iodinated organic ammonium salt AI+) Ethylamine ion (EA)+) Mercaptoethylamine ion (ESA)+) Ethanolamine ion (EOA)+) Propylamine ion (PA)+) Isopropylamine Ion (iPA)+) Cyclopropylamine ion (CyPA)+) Butylamine ion (BA)+) Isobutylamine Ion (iBA)+) T-butylamine ion (t-BA)+) Pentamine ion (Penta)+) Phenylamine ion (PhA)+) Methoxy phenethylamine ion (2-MeOPEA)+) Trifluoroethylamine ion (F)3EA+) Trifluoromethylaniline ion (CF)3PhA+) Trifluoromethylbenzenemethanamine ion (CF)3PMA+) Trifluoromethyl phenethylamine (CF)3PEA+) Pyridine methylamine ion (PyA)+) 3-dimethylamino-1-propylamine ion (3-Me2 PDA)+) Diethylamine ion (DEA)+) Benzylamine ion (PMA)+) Phenethylamine ion (PEA)+) P-fluorophenylethylamine ion (p-F-PEA)+) M-fluorophenylethylamine ion (m-F-PEA)+) O-fluorophenylethylamine ionSeed (o-F-PEA)+) Phenylalanyl amine ion (PPA)+) Phenylbutylamine ion (PhBA)+) 4-tert-butylaniline ion (tBPA)+) 4-tert-butylbenzylmethylamine ion (tBBA)+) One or more of (a).
3. The method of claim 1, wherein in step 1 the chloride additive is at least one of ammonium chloride, methyl ammonium chloride, formamidine hydrochloride, ethyl ammonium chloride, propyl ammonium chloride, and butyl ammonium chloride, and the fluoride additive is at least one of ammonium fluoride, lithium fluoride, sodium fluoride, potassium fluoride, and cesium fluoride.
4. The method of claim 1, wherein the solvent comprises at least one of Dimethylformamide (DMF), Dimethylsulfoxide (DMSO), N-methylpyrrolidinone (NMP), and dimethylacetamide (DMAc).
5. The method of claim 1, wherein the substrate in step 2 is fluorine-doped SnO2Conductive glass (FTO), indium tin oxide transparent conductive film glass (ITO), PET/ITO (PET is polyethylene terephthalate), PEN/ITO (PEN is polyethylene naphthalate) or metal sheets.
6. The method for preparing a pure-phase RP perovskite thin film as claimed in claim 1, wherein the rotating speed of the rotary coating equipment is 1500-8000 rmp, the rotating time is 5-30 s, the ambient temperature is 1-50 ℃, and the ambient relative humidity is 30-90%.
7. Use of the pure phase RP perovskite thin film prepared by the method of claim 1 for photovoltaic devices (including indoor photovoltaic devices and semi-transparent photovoltaic devices), photodetectors (photovoltaic and photoconductive), light emitting diodes and X-ray detectors.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115594413A (en) * | 2022-10-21 | 2023-01-13 | 榆林学院（Cn） | Preparation method of sodium-doped two-dimensional perovskite thin film |
| EP4277453A1 (en) * | 2022-05-09 | 2023-11-15 | Korea Electric Power Corporation | Method of preparing single crystal perovskite and method of manufacturing solar cell using single crystal perovskite |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4277453A1 (en) * | 2022-05-09 | 2023-11-15 | Korea Electric Power Corporation | Method of preparing single crystal perovskite and method of manufacturing solar cell using single crystal perovskite |
| CN115594413A (en) * | 2022-10-21 | 2023-01-13 | 榆林学院（Cn） | Preparation method of sodium-doped two-dimensional perovskite thin film |
| CN115594413B (en) * | 2022-10-21 | 2023-12-29 | 榆林学院 | Preparation method of sodium-doped two-dimensional perovskite film |
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