CN115996583B - Perovskite/silicon laminated solar cell and preparation method thereof - Google Patents
Perovskite/silicon laminated solar cell and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a perovskite/silicon laminated solar cell and a preparation method thereof, wherein the cell comprises a silicon-based solar cell and a perovskite cell arranged on the silicon-based solar cell, the perovskite cell comprises a second ITO transparent conductive layer, a hole transmission layer, a perovskite light absorption layer, an electron transmission layer, a third ITO transparent conductive layer and a second metal electrode silver layer from bottom to top, and the electron transmission layer comprises C from bottom to top 60 The material layer, the first material layer and the second material layer, the material of first material layer and second material layer is different oxide. The invention can improve the photoelectric conversion efficiency and stability of the laminated solar cell.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a perovskite/silicon laminated solar cell and a preparation method thereof.
Background
In recent years, with the development of industrialization, the solution of energy problems has become a vital part of the development of human civilization. World energy consumption is mainly based on non-renewable fossil fuels such as petroleum, coal and the like, however, due to the gradual exhaustion of fossil fuels and a series of environmental problems generated in the use process, searching for new clean energy has become a major challenge worldwide. Solar photovoltaic is used as a renewable clean energy source, is inexhaustible, and therefore has important significance for effectively utilizing solar energy.
Solar cells are photovoltaic devices that directly convert light energy into electrical energy, and among many photovoltaic devices, perovskite solar cells have been rapidly developed in recent years due to their low cost, simple process, and the like. In the past decade, the photoelectric conversion efficiency of perovskite solar cells has increased from 3.8% to a maximum of 25.7%. The perovskite/silicon laminated solar cell is expected to break the theoretical limit of the silicon-based solar cell, further reduces the cost of silicon photovoltaics, and has great industrialized application prospect.
However, perovskite/silicon stacked solar cells are expensive to manufacture and complex in process, for example, conventional atomic layer deposition (ALD, atomic Layer Deposition) or magnetron sputtering is often used for the commonly used oxide transport layer, which is expensive and the manufacturing process used is not conducive to the industrial mass production thereof. Perovskite cell stability, on the other hand, is closely related to the chemical nature of the transport layer material itself, making the non-degradation of intrinsic defects still challenging under the influence of oxygen, temperature, electric fields, etc.
In the prior art, seo J Y et al authors disclose in their published papers "Ionic liquid control crystal growth to enhance planar perovskite solar cells efficiency (Advanced Energy Materials, 2016, 6 (20): 1600767.)" a deposition of SnO using ALD 2 Perovskite planar cells as electron transport layers, which deposit SnO at 118 ℃ using tetra (dimethylamino) tin (IV) and ozone 2 The constant growth rate of 0.065nm per cycle is measured by ellipsometry, and the perovskite planar cell prepared based on the ALD method realizes the photoelectric conversion efficiency of 19.5%. However, the method has disadvantages in that it is unsuitable for large-area industrialization due to high ALD cost, high temperature and poor film uniformity, and thus, development of a simple and low-cost process for preparing an oxide transport layer for use in the industrialization of perovskite solar cells is desired.
The paper "Oxygen-and Water-based degradation in [6,6 ] published by the authors of Q Bao et al]A use is disclosed in phenyl-C61-butyric acid methyl ester (PCBM) films "(Advanced Energy Materials, 2014, 4 (6): 1301272.) [6,6 ]]-phenyl C61 methyl butyrate (PCBM) as electron transport material. PCBM has high electron mobility, and the solubility of organic materials is greatly improved compared with traditional fullerene materials. But the method is deficientThe point is that the fullerene part in PCBM will react with H in air 2 O and O 2 The reaction occurs, which results in a change in the energy level position of PCBM, so that the long-term stability of the perovskite battery is not ensured.
Based on the above, there is still a large room for improvement in device performance and stability of perovskite/silicon stacked solar cells.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a perovskite/silicon stacked solar cell and a preparation method thereof. The technical problems to be solved by the invention are realized by the following technical scheme:
one embodiment of the present invention provides a perovskite/silicon tandem solar cell including a silicon-based solar cell and a perovskite cell disposed over the silicon-based solar cell, wherein:
the silicon-based solar cell comprises a first metal electrode silver layer, a silicon dioxide substrate layer, a first ITO transparent conductive layer, a p-type amorphous silicon layer, a first i-type amorphous silicon layer, an n-type monocrystalline silicon layer, a second i-type amorphous silicon layer and an n-type amorphous silicon layer from bottom to top in sequence, wherein the upper surfaces and the lower surfaces of the first metal electrode silver layer, the silicon dioxide substrate layer, the first ITO transparent conductive layer, the p-type amorphous silicon layer, the first i-type amorphous silicon layer, the n-type monocrystalline silicon layer, the second i-type amorphous silicon layer and the n-type amorphous silicon layer are all suede surfaces;
The perovskite battery sequentially comprises a second ITO transparent conductive layer, a hole transmission layer, a perovskite light absorption layer, an electron transmission layer, a third ITO transparent conductive layer and a second metal electrode silver layer from bottom to top, wherein the upper surface and the lower surface of the second ITO transparent conductive layer, the upper surface and the lower surface of the hole transmission layer, the lower surface of the perovskite light absorption layer and the upper surface of the second metal electrode silver layer are all suede surfaces, and the electron transmission layer sequentially comprises C from bottom to top 60 A material layer, a first material layer and a second material layer, the C 60 The work functions of the material layer, the first material layer and the second material layer are sequentially increased, and the hole transport layer are sequentially increasedThe materials of the first material layer and the second material layer are different oxides.
In one embodiment of the invention, the material of the perovskite light absorbing layer comprises an organic-inorganic halide perovskite material.
In one embodiment of the present invention, the organic-inorganic halide perovskite material has the structural formula ABX 3 The method comprises the steps of carrying out a first treatment on the surface of the Wherein A is MA + 、FA + At least one of cesium ions, B is lead ion, and X is at least one of iodine, bromine and chlorine.
In one embodiment of the present invention, the thickness of the perovskite light absorbing layer is 800-1200 nm.
In one embodiment of the present invention, the material of the first material layer comprises zinc oxide, the material of the second material layer comprises tin oxide, and the C 60 The thickness of the material layer is greater than the thickness of the first material layer and the second material layer.
In one embodiment of the invention, the C 60 The thickness of the material layer is 40-60 nm, and the thicknesses of the first material layer and the second material layer are 15-20 nm.
In one embodiment of the present invention, the hole transport layer is made of nickel oxide.
In one embodiment of the present invention, the hole transport layer has a thickness of 15 to 20nm.
An embodiment of the present invention further provides a method for preparing a perovskite/silicon stacked solar cell according to any one of the above embodiments, the method comprising:
the method comprises the steps of preparing a silicon-based solar cell which sequentially comprises a first metal electrode silver layer, a silicon dioxide substrate layer, a first ITO transparent conducting layer, a p-type amorphous silicon layer, a first i-type amorphous silicon layer, an n-type monocrystalline silicon layer, a second i-type amorphous silicon layer and an n-type amorphous silicon layer from bottom to top;
sputtering a second ITO transparent conductive layer on the n-type amorphous silicon layer of the silicon-based solar cell subjected to ozone plasma treatment;
A first precursor solution is scraped on the second ITO transparent conducting layer by a scraping printing method, so that a hole transport layer is prepared;
a perovskite precursor solution is scraped and coated on the hole transport layer by adopting a scraping and printing method to prepare a perovskite film, and then annealing treatment is carried out to obtain a perovskite light absorption layer;
preparation of C on the perovskite light absorption layer by vapor deposition 60 A material layer;
doctoring the second precursor solution on the C by a doctoring printing method 60 Preparing a first material layer on the material layer;
a third precursor solution is coated on the first material layer by a doctor-blade printing method to prepare a second material layer;
depositing a third ITO transparent conductive layer on the second material layer;
preparing a second metal electrode silver layer on the third ITO transparent conductive layer;
wherein the C 60 The work functions of the material layer, the first material layer and the second material layer are sequentially increased, and the materials of the hole transport layer, the first material layer and the second material layer are different oxides.
In one embodiment of the present invention, the first precursor solution includes a nickel oxide precursor solution, the second precursor solution includes a zinc oxide precursor solution, the third precursor solution includes a tin oxide precursor solution, the material of the first material layer includes zinc oxide, the material of the second material layer includes tin oxide, and the material of the hole transport layer is nickel oxide.
Compared with the prior art, the invention has the beneficial effects that:
the materials of the electron transport layer and the hole transport layer of the perovskite/silicon laminated solar cell provided by the invention comprise oxides, so that the defect of instability caused by adopting an organic material as a transport layer material in the prior art is overcome, and the stability of the perovskite/silicon laminated solar cell is improved by utilizing the advantage of high stability of the oxides.
The electron transport layer of the inventionFrom C 60 The composite oxide electron transport layer overcomes the defect of poor conductivity of the traditional single electron transport layer, has high conductivity and stability, and can improve the photoelectric conversion efficiency and stability of the perovskite/silicon laminated solar cell.
The invention adopts the doctor-blading printing method to prepare the hole transmission layer, the electron transmission layer and the perovskite light absorption layer, thereby realizing the large-area preparation of the perovskite/silicon laminated solar cell, greatly saving the process preparation cost, and utilizing the doctor-blading printing method to prepare the hole transmission layer and the electron transmission layer overcomes the high cost problems of the traditional atomic layer deposition and magnetron sputtering method, so that the invention has the advantage of low cost, has simpler process and ensures the photoelectric conversion efficiency and the stability of the perovskite/silicon laminated solar cell.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite/silicon stacked solar cell according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of a method for manufacturing a perovskite/silicon stacked solar cell according to an embodiment of the invention.
Symbol description:
1-first metal electrode silver layer, 2-silicon dioxide substrate layer, 3-first ITO transparent conductive layer, 4-p type amorphous silicon layer, 5-first i type amorphous silicon layer, 6-n type monocrystalline silicon layer, 7-second i type amorphous silicon layer, 8-n type amorphous silicon layer, 9-second ITO transparent conductive layer, 10-hole transport layer, 11-perovskite light absorption layer, 12-C 60 The material layer, 13-the first material layer, 14-the second material layer, 15-the third ITO transparent conducting layer and 16-the second metal electrode silver layer.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
In the present embodiment, "upper", "lower", "left" and "right" refer to the positional relationship when the perovskite/silicon stacked solar cell is in the illustrated state, and "width" refers to the lateral dimension when the perovskite/silicon stacked solar cell is in the illustrated state, and "thickness" refers to the longitudinal dimension when the perovskite/silicon stacked solar cell is in the illustrated state.
Example 1
Referring to fig. 1, fig. 1 is a schematic structural diagram of a perovskite/silicon stacked solar cell according to an embodiment of the present invention, and the perovskite/silicon stacked solar cell includes a silicon-based solar cell and a perovskite cell disposed on the silicon-based solar cell, wherein:
the silicon-based solar cell sequentially comprises a first metal electrode silver layer 1, a silicon dioxide substrate layer 2, a first ITO (indium tin oxide) transparent conducting layer 3, a p-type amorphous silicon layer 4, a first i-type amorphous silicon layer 5, an n-type monocrystalline silicon layer 6, a second i-type amorphous silicon layer 7 and an n-type amorphous silicon layer 8 from bottom to top, wherein the upper and lower surfaces of the first metal electrode silver layer 1, the silicon dioxide substrate layer 2, the first ITO transparent conducting layer 3, the p-type amorphous silicon layer 4, the first i-type amorphous silicon layer 5, the n-type monocrystalline silicon layer 6, the second i-type amorphous silicon layer 7 and the n-type amorphous silicon layer 8 are all suede surfaces, and the silicon-based solar cell is a silicon heterojunction cell;
the perovskite battery sequentially comprises a second ITO transparent conductive layer 9, a hole transmission layer 10, a perovskite light absorption layer 11, an electron transmission layer, a third ITO transparent conductive layer 15 and a second metal electrode silver layer 16 from bottom to top, wherein the upper and lower surfaces of the second ITO transparent conductive layer 9, the upper and lower surfaces of the hole transmission layer 10, the lower surface of the perovskite light absorption layer 11 and the upper surface of the second metal electrode silver layer 16 are all suede surfaces, and the electron transmission layer sequentially comprises C from bottom to top 60 Material layer 12, first material layer 13 and second material layer 14, c 60 The work functions of the material layer 12, the first material layer 13 and the second material layer 14 are sequentially increased, and the materials of the hole transport layer 10, the first material layer 13 and the second material layer 14 are different oxides.
The electron transport layer and the hole transport layer of the invention adoptThe oxide is used as the transmission layer, the defect of instability caused by the adoption of an organic material as the transmission layer material in the prior art is overcome, and poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine is mostly adopted in the trans-perovskite solar cell in the prior art](PTAA) as hole transport layer, [6,6]The phenyl C61 methyl butyrate (PCBM) is used as an electron transport layer, the first material layer and the second material layer of the hole transport layer and the electron transport layer adopt oxides of different materials, so that the stability of the hole transport layer and the electron transport layer is fully improved, and the stability of the perovskite/silicon laminated solar cell is further improved. In addition, the existing electron transport layer mostly adopts single C 60 The material of the transmission layer has unmatched work function with that of the metal electrode, which causes severe non-radiative recombination of interface charges, and the work function is increased gradually by introducing C 60 The material layer, the first material layer and the second material layer are used as electron transport layers, so that the work function mismatch problem between the electron transport layers and the silver layer of the second metal electrode is improved, work function energy levels are more matched, interface electron transport is facilitated, conductivity is improved, the defect of poor conductivity of a traditional single electron transport layer is overcome, non-radiative recombination of interface charges is effectively inhibited, short-circuit current and filling factors of devices are improved, photoelectric conversion efficiency of a perovskite/silicon laminated solar cell can be improved, and meanwhile, the adopted composite oxide electron transport layer has higher stability and stability of the perovskite/silicon laminated solar cell can be improved.
Alternatively, the p-type amorphous silicon layer 4 is a-Si: H (p + ) I.e. p-type hydrogenated amorphous silicon, the first i-type amorphous silicon layer 5 and the second i-type amorphous silicon layer 7 are a-Si: H (i), i.e. i-type hydrogenated amorphous silicon, and the n-type monocrystalline silicon layer is c-Si (n).
Alternatively, the material of the perovskite light absorbing layer 11 includes an organic-inorganic halide perovskite material.
Further, the structural formula of the organic-inorganic halide perovskite material is ABX 3 The method comprises the steps of carrying out a first treatment on the surface of the Wherein A is MA + (methylamine ion), FA + (formamidine ion) and cesium ion, B is lead ion, and X is at least one of iodine, bromine and chlorine. Using such ABX 3 The perovskite/silicon stacked solar cell can be made to have excellent photoelectric properties.
Further, the thickness of the perovskite light absorbing layer 11 is 800 to 1200nm.
Optionally, the material of the first material layer 13 comprises zinc oxide, and the material of the second material layer 14 comprises tin oxide, C 60 The thickness of the material layer 12 is greater than the thickness of the first material layer 13 and the second material layer 14. The zinc oxide selected by the first material layer 13 and the tin oxide selected by the second material layer 14 of the embodiment have higher mobility, and the zinc oxide is positioned at C 60 On the material layer, tin oxide is positioned on zinc oxide, C 60 The work functions of zinc oxide and tin oxide are sequentially increased, so that the work function mismatch problem between the electron transport layer and the silver layer of the second metal electrode is improved, and the non-radiative recombination of interface charges is effectively inhibited; in addition, the energy level matched with the composite electron transport layer is more favorable for interfacial transport of charges, and accumulation of charges at the interface and non-radiative recombination are reduced, so that better filling factor and device performance of the laminated battery are realized. And the structure can realize low-temperature preparation by using a doctor-blading printing method.
Further, C 60 The material layer 12 needs to be ensured to have a certain thickness so as to avoid corrosion damage to the underlying perovskite light absorption layer during oxide layer preparation, thereby protecting the perovskite light absorption layer, and thus the embodiment is provided with C 60 The thickness of the material layer 12 is 40-60 nm, and the thicknesses of the first material layer 13 and the second material layer 14 are 15-20 nm.
Alternatively, the material of the hole transport layer 10 is nickel oxide. Nickel oxide can be used as a hole transport layer to realize low-temperature preparation and ensure conductivity and stability.
Further, the thickness of the hole transport layer 10 is 15 to 20nm.
Alternatively, the second ITO transparent conductive layer 9 has a thickness of 150nm and the third ITO transparent conductive layer 15 has a thickness of 20nm.
The materials of the electron transport layer and the hole transport layer of the perovskite/silicon laminated solar cell provided by the invention comprise oxides, so that the problem of instability caused by adopting an organic material as a transport layer material in the prior art is solved, and the stability of the perovskite/silicon laminated solar cell is improved by utilizing the advantage of high stability of the oxides.
The electron transport layer of the invention is composed of C 60 The composite oxide electron transport layer overcomes the defect of poor conductivity of the traditional single electron transport layer, has high conductivity and stability, and can improve the photoelectric conversion efficiency and stability of the perovskite/silicon laminated solar cell.
Example two
Referring to fig. 2, fig. 2 is a schematic flow chart of a method for preparing a perovskite/silicon stacked solar cell according to an embodiment of the present invention, and the method for preparing a perovskite/silicon stacked solar cell according to an embodiment of the present invention further provides a method for preparing a perovskite/silicon stacked solar cell according to an embodiment of the present invention, which comprises:
s1, preparing a silicon-based solar cell which sequentially comprises a first metal electrode silver layer 1, a silicon dioxide substrate layer 2, a first ITO transparent conducting layer 3, a p-type amorphous silicon layer 4, a first i-type amorphous silicon layer 5, an n-type monocrystalline silicon layer 6, a second i-type amorphous silicon layer 7 and an n-type amorphous silicon layer 8 from bottom to top.
S2, sputtering a second ITO transparent conductive layer 9 on the n-type amorphous silicon layer 8 of the silicon-based solar cell treated by ozone plasma by taking the silicon-based solar cell treated by ozone plasma as a substrate.
Specifically, a silicon-based solar cell after ozone plasma treatment is used as a substrate, an ITO transparent conductive layer is sputtered on the substrate, and annealing treatment is performed to obtain a second ITO transparent conductive layer 9.
And S3, scraping the first precursor solution on the second ITO transparent conductive layer 9 by adopting a scraping printing method to prepare the hole transport layer 10.
Optionally, the first precursor solution comprises a nickel oxide precursor solution.
Specifically, a nickel oxide precursor solution is knife-coated on the second ITO transparent conductive layer 9 by a knife-coating printing method to obtain a nickel oxide film, so as to complete the preparation of the hole transport layer 10.
In this embodiment, S3 may specifically include:
s31, will 6H 2 O·Ni(NO 3 ) 2 Dissolved in 2-ME (2-methoxyestradiol) and stirred at a first preset temperature until it is completely dissolved, after which acetylacetone is added and stirred at room temperature.
Specifically, 293.7mg of 6H 2 O·Ni(NO 3 ) 2 After dissolving in 10mL of 2-ME and stirring at 50℃until it was completely dissolved, 100. Mu.L of acetylacetone was added thereto, and stirring was performed at room temperature for 24 hours, to prepare a nickel oxide precursor solution.
And S32, filtering the nickel oxide precursor solution by using a filter head, coating a second ITO transparent conductive layer 9 by using a nitrogen auxiliary blade (namely a nitrogen air knife and a doctor blade), forming a gap between the blade and the second ITO transparent conductive layer 9, and performing annealing treatment to obtain the manufactured nickel oxide film, namely the hole transport layer 10.
Specifically, the nickel oxide precursor solution was filtered with a 0.35 μm filter head, and a nitrogen-assisted blade was knife-coated on the second ITO transparent conductive layer 9 at a speed of 25mm/s under a pressure of 10.0psi with a gap between the blade and the second ITO transparent conductive layer 9 of 100 μm, and nickel oxide was knife-coated on the second ITO transparent conductive layer 9 and annealed at 250 ℃ for 45 minutes to obtain a finished nickel oxide film.
And S4, scraping and coating the perovskite precursor solution on the hole transport layer 10 by adopting a scraping and printing method to prepare a perovskite film, and then annealing to obtain the perovskite light absorption layer 11.
Specifically, a perovskite precursor solution is prepared, a perovskite thin film is obtained on the hole transport layer 10 by a doctor blade method, and then an annealing treatment is performed to obtain the perovskite light absorbing layer 11.
S5, preparing C on the perovskite light absorption layer 11 by adopting an evaporation method 60 A layer of material 12.
Specifically, at a deposition rate of 0.15A/s, 60nm of C is thermally evaporated 60 A layer of material 12.
S6, scraping and coating the second precursor solution on the C by adopting a scraping and coating printing method 60 A first material layer 13 is prepared on the material layer 12.
Optionally, the second precursor solution comprises a zinc oxide precursor solution.
Specifically, the doctor blade printing method is adopted in C 60 The zinc oxide precursor solution is coated on the material layer 12 to obtain a zinc oxide film, so as to complete the preparation of the first material layer 13.
In this embodiment, S6 may specifically include:
and S61, dissolving the zinc acetate dihydrate material and the ethanolamine solution in the dimethoxy ethanol solution, and fully stirring at room temperature to prepare the zinc oxide precursor solution.
Specifically, 1g of zinc acetate dihydrate material and 0.28g of ethanolamine solution were dissolved in 10mL of dimethoxy ethanol solution, and stirred sufficiently at room temperature for 12 hours to prepare a zinc oxide precursor solution.
S62, scraping the prepared zinc oxide precursor solution on the C 60 On the material layer, the blade is assisted by nitrogen in C 60 The material layer 12 is coated at a speed of 20mm/s and a pressure of 10.0psi, blade and C 60 A gap exists between the material layers 12, and then degradation treatment is performed to obtain a manufactured zinc oxide film, namely a first material layer 13.
Specifically, the prepared zinc oxide precursor solution is coated on C 60 Coating the material layer with nitrogen gas assisted blade at a speed of 20mm/s and a pressure of 10.0psi, blade and C 60 The gap between the material layers is 200 μm, and then the material layers are placed at 150 ℃ for annealing for 30min, so that the manufactured zinc oxide film is obtained, and the preparation of the first material layer 13 is completed.
And S7, scraping the third precursor solution on the first material layer 13 by adopting a scraping printing method to prepare a second material layer 14.
Optionally, the third precursor solution comprises a tin oxide precursor solution.
Specifically, a tin oxide precursor solution is drawn on the first material layer 13 by a drawn-off printing method to obtain a tin oxide film, so as to complete the preparation of the second material layer 14.
In this embodiment, S7 may specifically include:
s71, mixing urea and deionized water to dissolve in SnCl 2 ·H 2 And adding the solution into the HCl solution, and magnetically stirring to prepare a tin oxide precursor solution.
Specifically, 0.5. 0.5 g urea was mixed with 40. 40 mL deionized water and dissolved in 0.002M SnCl 2 ·H 2 And adding 0.5mL of HCl (37%) into the solution, and magnetically stirring for 2min to prepare a tin oxide precursor solution.
S72, the prepared tin oxide precursor solution is coated on the first material layer 13 in a scraping mode, a nitrogen auxiliary blade is used for coating on the first material layer 13, gaps exist between the blade and the first material layer 13, and then annealing treatment is carried out to obtain the manufactured tin oxide film, namely the second material layer 14.
Specifically, the prepared tin oxide precursor solution was knife coated on the first material layer 13, the blade was coated with nitrogen gas at a speed of 20mm/s and a pressure of 10.0psi, the gap between the blade and the first material layer 13 was 200 μm, and then the resulting film was annealed at 180 ℃ for one hour to obtain a finished tin oxide film, and the preparation of the second material layer 14 was completed.
And S8, depositing a third ITO transparent conducting layer 15 on the second material layer 14.
Specifically, an ITO transparent conductive film is deposited on the second material layer 14 to prepare a third ITO transparent conductive layer 15.
And S9, preparing a second metal electrode silver layer 16 on the third ITO transparent conducting layer 15.
The invention adopts the doctor-blading printing method to prepare the hole transmission layer, the electron transmission layer and the perovskite light absorption layer, and uses the precursor solution to carry out doctor-blading printing, which is a low-temperature process, can realize large-area preparation under the low-temperature condition, greatly saves the process preparation cost compared with the traditional atomic layer deposition and magnetron sputtering method, overcomes the high cost problems of the traditional atomic layer deposition and magnetron sputtering method, ensures the invention to have the advantage of low cost, and has simpler and easier process realization, and simultaneously ensures the conductivity and the photoelectric conversion efficiency and the stability of the perovskite/silicon laminated solar cell because the hole transmission layer of the nickel oxide material and the second material layer of the zinc oxide material and the tin oxide material in the electron transmission layer are prepared by adopting the doctor-blading printing method.
Example III
The invention also provides a preparation method of the perovskite/silicon laminated solar cell based on the embodiment, which is used for preparing the perovskite/silicon laminated solar cell of the embodiment I, and comprises the following steps:
step A: and sputtering an ITO transparent conductive layer on the silicon-based solar cell treated by ozone plasma serving as a substrate, and then annealing at 200 ℃ for 20min to obtain a second ITO transparent conductive layer.
And (B) step (B): and preparing a hole transport layer. And preparing a hole transport layer of nickel oxide material on the second ITO transparent conductive layer by adopting a doctor blade printing method.
Step a: preparing nickel oxide precursor solution. 293.7mg of 6H 2 O·Ni(NO 2 ) 2 After dissolving in 10mL of 2-ME and stirring at 50℃until it was completely dissolved, 100. Mu.L of acetylacetone was added thereto, and stirring was performed at room temperature for 24 hours, to prepare a nickel oxide precursor solution.
Step b: and preparing a hole transport layer of the nickel oxide material. The nickel oxide precursor solution was filtered with a 0.35 μm filter head, coated with a nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi, with a gap between the blade and the second ITO transparent conductive layer of 100 μm, and nickel oxide was knife coated on the second ITO transparent conductive layer and annealed at 250℃for 45min to obtain a finished nickel oxide film to complete the preparation of the hole transport layer.
Step C: FA with forbidden band width of 1.75eV is prepared 0.8 Cs 0.2 Pb(I 0.7 Br 0.3 ) 3 Perovskite light absorbing layer.
Step a: preparation of FA 0.8 Cs 0.2 Pb(I 0.7 Br 0.3 ) 3 Perovskite precursor solution. 165.1mg of FAI (formamidine hydroiodidate), 62.4mg of CsI, 580.9mg of PbI 2 And 198.2 mg PbBr 2 Dissolving the powder in 1mL of 2-ME, and magnetically stirring for 2min to obtain FA 0.8 Cs 0.2 Pb(I 0.7 Br 0.3 ) 3 Perovskite precursor solution.
Step b: preparation of FA 0.8 Cs 0.2 Pb(I 0.7 Br 0.3 ) 3 Perovskite light absorbing layer. FA to be prepared 0.8 Cs 0.2 Pb(I 0.7 Br 0.3 ) 3 The perovskite precursor solution is coated on the hole transport layer by scraping, and the nitrogen is used for assisting the blade coating, the speed is 25mm/s, the pressure is 10.0psi, the gap between the blade and the hole transport layer is 100 mu m, and the FA which is manufactured is obtained 0.8 Cs 0.2 Pb(I 0.7 Br 0.3 ) 3 Perovskite light absorbing layer.
Step D: an electron transport layer is prepared. First at FA 0.8 Cs 0.2 Pb(I 0.7 Br 0.3 ) 3 Preparing a layer C on the perovskite light absorption layer by using an evaporation method 60 The material layer is then coated with a first material layer of zinc oxide material and a second material layer of tin oxide material, respectively.
Step a: thermal evaporation of 60nm C at a deposition rate of 0.15A/s 60 A material layer.
Step b: (1) preparing zinc oxide precursor solution. 1g of zinc acetate dihydrate material and 0.28g of ethanolamine solution were dissolved in 10mL of dimethoxy ethanol solution, and stirred sufficiently at room temperature for 12 hours to prepare a zinc oxide precursor solution. (2) preparing a first material layer. The prepared zinc oxide precursor solution is coated on C 60 Coating the material layer with nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi, blade and C 60 And the gap between the material layers is 100 mu m, and then the material layers are placed at 150 ℃ for annealing for 30min, so that the manufactured zinc oxide film, namely the first material layer, is obtained.
Step c: (1) Preparation of tin oxidePrecursor solution. 0.5g of urea was dissolved in 0.002M SnCl by mixing with 40mL of deionized water 2 ·H 2 And adding 0.5mL of HCl (37%) into the solution, and magnetically stirring for 2min to prepare a tin oxide precursor solution. (2) preparing a second material layer. The prepared tin oxide precursor solution is coated on the first material layer by scraping, the blade is coated by nitrogen, the speed is 25mm/s, the pressure is 10.0psi, the gap between the blade and the first material layer is 100 mu m, and then the first material layer is placed at 180 ℃ for annealing for one hour, so that the manufactured tin oxide film, namely the second material layer, is obtained.
Step E: and preparing a third ITO transparent conductive layer and a second metal electrode silver layer. Sputtering a layer of ITO transparent conductive film with the thickness of 20nm on the electron transmission layer to obtain a third ITO transparent conductive layer, and brushing a layer of metal electrode silver on the third ITO transparent conductive layer to obtain a second metal electrode silver layer, thereby finally obtaining the manufactured perovskite/silicon laminated solar cell.
Example IV
The invention also provides a preparation method of the perovskite/silicon laminated solar cell based on the embodiment, which is used for preparing the perovskite/silicon laminated solar cell of the embodiment I, and comprises the following steps:
step A: and sputtering an ITO transparent conductive layer on the silicon-based solar cell treated by ozone plasma serving as a substrate, and then annealing at 200 ℃ for 20min to obtain a second ITO transparent conductive layer.
And (B) step (B): and preparing a hole transport layer. And preparing a hole transport layer of nickel oxide material on the second ITO transparent conductive layer by adopting a doctor blade printing method.
Step a: preparing nickel oxide precursor solution. 293.7mg of 6H 2 O·Ni(NO 3 ) 2 After dissolving in 10mL of 2-ME and stirring at 50℃until it was completely dissolved, 100. Mu.L of acetylacetone was added thereto, and stirring was performed at room temperature for 24 hours, to prepare a nickel oxide precursor solution.
Step b: and preparing a hole transport layer of the nickel oxide material. The nickel oxide precursor solution was filtered with a 0.35 μm filter head, coated with a nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi, with a gap between the blade and the second ITO transparent conductive layer of 100 μm, and nickel oxide was knife coated over the second ITO transparent conductive layer and annealed at 250℃for 45min to give a finished nickel oxide film to complete the preparation of the hole transport layer.
Step C: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer.
Step a: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite precursor solution. 53mg of CsI, 171mg of FAI, 232mg of PbBr 2 And 267 mg PbI 2 Dissolving in 1mL of mixed solution of DMF and DMSO (dimethylformamide and dimethyl sulfoxide) =5:5, and heating and vibrating at 70deg.C for 12h to obtain FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite precursor solution.
Step b: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer. FA to be prepared 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Filtering the perovskite precursor solution with a 0.22 μm filter head, then scraping and coating on the hole transport layer, coating with nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi, and forming a gap between the blade and the hole transport layer of 100 μm to obtain the final FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer.
Step D: an electron transport layer is prepared. First at FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Preparing a layer C on the perovskite light absorption layer by using an evaporation method 60 The material layer is then coated with a first material layer of zinc oxide material and a second material layer of tin oxide material, respectively.
Step a: thermal evaporation of 60nm C at a deposition rate of 0.15A/s 60 A material layer.
Step b: (1) preparing zinc oxide precursor solution. 1g of zinc acetate dihydrate material and0.28g of the ethanolamine solution was dissolved in 10mL of dimethoxy ethanol solution, and the mixture was sufficiently stirred at room temperature for 12 hours to prepare a zinc oxide precursor solution. (2) preparing a first material layer. The prepared zinc oxide precursor solution is coated on C 60 Coating the material layer with nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi, blade and C 60 And the gap between the material layers is 100 mu m, and then the material layers are placed at 150 ℃ for annealing for 30min, so that the manufactured zinc oxide film, namely the first material layer, is obtained.
Step c: (1) preparing a tin oxide precursor solution. 0.5g of urea was dissolved in 0.002M SnCl by mixing with 40mL of deionized water 2 ·H 2 And adding 0.5mL of HCl (37%) into the solution, and magnetically stirring for 2min to prepare a tin oxide precursor solution. (2) preparing a second material layer. The prepared tin oxide precursor solution is coated on the first material layer by scraping, the blade is coated by nitrogen, the speed is 25mm/s, the pressure is 10.0psi, the gap between the blade and the first material layer is 100 mu m, and then the first material layer is placed at 180 ℃ for annealing for one hour, so that the manufactured tin oxide film, namely the second material layer, is obtained.
Step E: and preparing a third ITO transparent conductive layer and a second metal electrode silver layer. Sputtering a layer of ITO transparent conductive film with the thickness of 20nm on the electron transmission layer to obtain a third ITO transparent conductive layer, and brushing a layer of metal electrode silver on the third ITO transparent conductive layer to obtain a second metal electrode silver layer, thereby finally obtaining the manufactured perovskite/silicon laminated solar cell.
Example five
The invention also provides a preparation method of the perovskite/silicon laminated solar cell based on the embodiment, which is used for preparing the perovskite/silicon laminated solar cell of the embodiment I, and comprises the following steps:
step A: and sputtering an ITO transparent conductive layer on the silicon-based solar cell treated by ozone plasma serving as a substrate, and then annealing at 200 ℃ for 20min to obtain a second ITO transparent conductive layer.
And (B) step (B): and preparing a hole transport layer. And preparing a hole transport layer of nickel oxide material on the second ITO transparent conductive layer by adopting a doctor blade printing method.
Step a: preparing nickel oxide precursor solution. 293.7mg of 6H 2 O·Ni(NO 3 ) 2 After dissolving in 10mL of 2-ME and stirring at 50℃until it was completely dissolved, 100. Mu.L of acetylacetone was added thereto, and stirring was performed at room temperature for 24 hours, to prepare a nickel oxide precursor solution.
Step b: and preparing a hole transport layer of the nickel oxide material. The nickel oxide precursor solution was filtered with a 0.35 μm filter head, coated with a nitrogen-assisted blade at a speed of 25 mm/s and a pressure of 10.0psi, with a gap between the blade and the second ITO transparent conductive layer of 100 μm, and nickel oxide was knife coated on the second ITO transparent conductive layer and annealed at 250℃for 45min to give a finished nickel oxide film to complete the preparation of the hole transport layer.
Step C: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer.
Step a: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite precursor solution. 53mg of CsI, 171mg of FAI, 232mg of PbBr 2 And 267mg of PbI 2 Dissolving in 1mL of mixed solution of DMF and DMSO (dimethylformamide and dimethyl sulfoxide) =6:4, and heating and vibrating at 70 ℃ for 12h to obtain FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite precursor solution.
Step b: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer. FA to be prepared 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Filtering the perovskite precursor solution with a 0.22 μm filter head, then scraping and coating on the hole transport layer, coating with nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi, and forming a gap between the blade and the hole transport layer of 100 μm to obtain the final FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer.
Step D: an electron transport layer is prepared. First at FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Preparing a layer C on the perovskite light absorption layer by using an evaporation method 60 The material layer is then coated with a first material layer of zinc oxide material and a second material layer of tin oxide material, respectively.
Step a: thermal evaporation of 60nm C at a deposition rate of 0.15A/s 60 A material layer.
Step b: (1) preparing zinc oxide precursor solution. 1g of zinc acetate dihydrate material and 0.28g of ethanolamine solution were dissolved in 10mL of dimethoxy ethanol solution, and stirred sufficiently at room temperature for 12 hours to prepare a zinc oxide precursor solution. (2) preparing a first material layer. The prepared zinc oxide precursor solution is coated on C 60 Coating the material layer with nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi, blade and C 60 And the gap between the material layers is 100 mu m, and then the material layers are placed at 150 ℃ for annealing for 30min, so that the manufactured zinc oxide film, namely the first material layer, is obtained.
Step c: (1) preparing a tin oxide precursor solution. 0.5g of urea was dissolved in 0.002M SnCl by mixing with 40mL of deionized water 2 ·H 2 And adding 0.5mL of HCl (37%) into the solution, and magnetically stirring for 2min to prepare a tin oxide precursor solution. (2) preparing a second material layer. The prepared tin oxide precursor solution is coated on the first material layer by scraping, the blade is coated by nitrogen, the speed is 25mm/s, the pressure is 10.0psi, the gap between the blade and the first material layer is 100 mu m, and then the first material layer is placed at 180 ℃ for annealing for one hour, so that the manufactured tin oxide film, namely the second material layer, is obtained.
Step E: and preparing a third ITO transparent conductive layer and a second metal electrode silver layer. Sputtering a layer of ITO transparent conductive film with the thickness of 20nm on the electron transmission layer to obtain a third ITO transparent conductive layer, and brushing a layer of metal electrode silver on the third ITO transparent conductive layer to obtain a second metal electrode silver layer, thereby finally obtaining the manufactured perovskite/silicon laminated solar cell.
Example six
The invention also provides a preparation method of the perovskite/silicon laminated solar cell based on the embodiment, which is used for preparing the perovskite/silicon laminated solar cell of the embodiment I, and comprises the following steps:
step A: and sputtering an ITO transparent conductive layer on the silicon-based solar cell treated by ozone plasma serving as a substrate, and then annealing at 200 ℃ for 20min to obtain a second ITO transparent conductive layer.
And (B) step (B): and preparing a hole transport layer. And preparing a hole transport layer of nickel oxide material on the second ITO transparent conductive layer by adopting a doctor blade printing method.
Step a: preparing nickel oxide precursor solution. 293.7mg of 6H 2 O·Ni(NO 3 ) 2 After dissolving in 10mL of 2-ME and stirring at 50℃until it was completely dissolved, 100. Mu.L of acetylacetone was added thereto, and stirring was performed at room temperature for 24 hours, to prepare a nickel oxide precursor solution.
Step b: and preparing a hole transport layer of the nickel oxide material. The nickel oxide precursor solution was filtered with a 0.35 μm filter head, coated with a nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi, with a gap between the blade and the second ITO transparent conductive layer of 100 μm, and nickel oxide was knife coated on the second ITO transparent conductive layer and annealed at 250℃for 45min to obtain a finished nickel oxide film to complete the preparation of the hole transport layer.
Step C: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer.
Step a: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite precursor solution. 53mg of CsI, 171mg of FAI, 232mg of PbBr 2 And 267mg of PbI 2 Dissolving in 1mL of mixed solution of DMF and DMSO (dimethylformamide and dimethyl sulfoxide) =7:3, and heating and vibrating at 70deg.C for 12h to obtain FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite precursor solution.
Step b: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer. FA to be prepared 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Filtering the perovskite precursor solution with a 0.22 μm filter head, then scraping and coating on the hole transport layer, coating with nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi, and forming a gap between the blade and the hole transport layer of 100 μm to obtain the final FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer.
Step D: an electron transport layer is prepared. First at FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Preparing a layer C on the perovskite light absorption layer by using an evaporation method 60 The material layer is then coated with a first material layer of zinc oxide material and a second material layer of tin oxide material, respectively.
Step a: thermal evaporation of 60nm C at a deposition rate of 0.15A/s 60 A material layer.
Step b: (1) preparing zinc oxide precursor solution. 1g of zinc acetate dihydrate material and 0.28g of ethanolamine solution were dissolved in 10mL of dimethoxy ethanol solution, and stirred well at room temperature for 12 hours. (2) preparing a first material layer. The prepared zinc oxide precursor solution is coated on C 60 Coating the material layer with nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi, blade and C 60 And the gap between the material layers is 100 mu m, and then the material layers are placed at 150 ℃ for annealing for 30min, so that the manufactured zinc oxide film, namely the first material layer, is obtained.
Step c: (1) preparing a tin oxide precursor solution. 0.5g of urea was dissolved in 0.002M SnCl by mixing with 40mL of deionized water 2 ·H 2 And adding 0.5mL of HCl (37%) into the solution, and magnetically stirring for 2min to prepare a tin oxide precursor solution. (2) preparing a second material layer. The prepared tin oxide precursor solution is coated on the first material layer by a blade coating assisted by nitrogen with the speed of 25mm/s and the pressure of 10.0psi, the gap between the blade and the first material layer is 100 mu m, and then the material layer is annealed at 180 ℃ for one hour to obtain the tin oxideA completed tin oxide film, i.e., a second material layer, is formed.
Step E: and preparing a third ITO transparent conductive layer and a second metal electrode silver layer. Sputtering a layer of ITO transparent conductive film with the thickness of 20nm on the electron transmission layer to obtain a third ITO transparent conductive layer, and brushing a layer of metal electrode silver on the third ITO transparent conductive layer to obtain a second metal electrode silver layer, thereby finally obtaining the manufactured perovskite/silicon laminated solar cell.
Example seven
The invention also provides a preparation method of the perovskite/silicon laminated solar cell based on the embodiment, which is used for preparing the perovskite/silicon laminated solar cell of the embodiment I, and comprises the following steps:
step A: and sputtering an ITO transparent conductive layer on the silicon-based solar cell treated by ozone plasma serving as a substrate, and then annealing at 200 ℃ for 20min to obtain a second ITO transparent conductive layer.
And (B) step (B): and preparing a hole transport layer. And preparing a hole transport layer of nickel oxide material on the second ITO transparent conductive layer by adopting a doctor blade printing method.
Step a: preparing nickel oxide precursor solution. 293.7mg of 6H 2 O·Ni(NO 3 ) 2 After dissolving in 10mL of 2-ME and stirring at 50℃until it was completely dissolved, 100. Mu.L of acetylacetone was added thereto, and stirring was performed at room temperature for 24 hours, to prepare a nickel oxide precursor solution.
Step b: and preparing a hole transport layer of the nickel oxide material. The nickel oxide precursor solution was filtered with a 0.35 μm filter head, coated with a nitrogen-assisted blade at a speed of 25 mm/s and a pressure of 10.0psi, with a gap between the blade and the second ITO transparent conductive layer of 100 μm, and nickel oxide was knife coated on the second ITO transparent conductive layer and annealed at 250℃for 45min to give a finished nickel oxide film to complete the preparation of the hole transport layer.
Step C: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer.
Step a: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite precursor solution. 53mg of CsI, 171mg of FAI, 232mg of PbBr 2 And 267mg of PbI 2 Dissolving in 1mL of mixed solution of DMF and DMSO (dimethylformamide and dimethyl sulfoxide) =8:2, and heating and vibrating at 70 ℃ for dissolving for 12h to obtain FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite precursor solution.
Step b: preparation of FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer. Filtering the prepared perovskite precursor solution with a 0.22 μm filter head, then blade-coating on the hole transport layer, and coating with nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi with a gap between the blade and the hole transport layer of 100 μm to obtain the final FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Perovskite light absorbing layer.
Step D: an electron transport layer is prepared. First at FA 0.83 Cs 0.17 Pb(I 0.65 Br 0.35 ) 3 Preparing a layer C on the perovskite light absorption layer by using an evaporation method 60 The material layer is then coated with a first material layer of zinc oxide material and a second material layer of tin oxide material, respectively.
Step a: thermal evaporation of 60nm C at a deposition rate of 0.15A/s 60 A material layer.
Step b: (1) preparing zinc oxide precursor solution. 1g of zinc acetate dihydrate material and 0.28g of ethanolamine solution were dissolved in 10mL of dimethoxy ethanol solution, and stirred sufficiently at room temperature for 12 hours to prepare a zinc oxide precursor solution. (2) preparing a first material layer. The prepared zinc oxide precursor solution is coated on C 60 Coating the material layer with nitrogen-assisted blade at a speed of 25mm/s and a pressure of 10.0psi, blade and C 60 And the gap between the material layers is 100 mu m, and then the material layers are placed at 150 ℃ for annealing for 30min, so that the manufactured zinc oxide film, namely the first material layer, is obtained.
Step c: (1) preparing a tin oxide precursor solution. Urine 0.5gThe element was dissolved in 0.002M SnCl by mixing with 40mL deionized water 2 ·H 2 And adding 0.5mL of HCl (37%) on the O solution into the solution, and magnetically stirring for 2min to prepare a tin oxide precursor solution. (2) preparing a second material layer. The prepared tin oxide precursor solution is coated on the first material layer by scraping, the blade is coated by nitrogen, the speed is 25mm/s, the pressure is 10.0psi, the gap between the blade and the first material layer is 100 mu m, and then the first material layer is placed at 180 ℃ for annealing for one hour, so that the manufactured tin oxide film, namely the second material layer, is obtained.
Step E: and preparing a third ITO transparent conductive layer and a second metal electrode silver layer. Sputtering a layer of ITO transparent conductive film with the thickness of 20nm on the electron transmission layer to obtain a third ITO transparent conductive layer, and brushing a layer of metal electrode silver on the third ITO transparent conductive layer to obtain a second metal electrode silver layer, thereby finally obtaining the manufactured perovskite/silicon laminated solar cell.
In the description of the present invention, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
Although the invention is described herein in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed invention, from a study of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. Modifications made by those skilled in the art without departing from the spirit of the invention should be considered as falling within the scope of the invention.
Claims (9)
1. A perovskite/silicon tandem solar cell, comprising a silicon-based solar cell and a perovskite cell disposed over the silicon-based solar cell, wherein:
The silicon-based solar cell sequentially comprises a first metal electrode silver layer (1), a silicon dioxide substrate layer (2), a first ITO transparent conductive layer (3), a p-type amorphous silicon layer (4), a first i-type amorphous silicon layer (5), an n-type monocrystalline silicon layer (6), a second i-type amorphous silicon layer (7) and an n-type amorphous silicon layer (8) from bottom to top, wherein the upper and lower surfaces of the first metal electrode silver layer (1), the silicon dioxide substrate layer (2), the first ITO transparent conductive layer (3), the p-type amorphous silicon layer (4), the first i-type amorphous silicon layer (5) and the n-type monocrystalline silicon layer (6) are all suede surfaces;
the perovskite battery sequentially comprises a second ITO transparent conductive layer (9), a hole transmission layer (10), a perovskite light absorption layer (11), an electron transmission layer and a first ITO transparent conductive layer from bottom to topThree ITO transparent conductive layers (15) and a second metal electrode silver layer (16), wherein the upper surface and the lower surface of the second ITO transparent conductive layer (9), the upper surface and the lower surface of the hole transmission layer (10), the lower surface of the perovskite light absorption layer (11) and the upper surface of the second metal electrode silver layer (16) are all suede surfaces, and the electron transmission layer sequentially comprises C from bottom to top 60 A material layer (12), a first material layer (13) and a second material layer (14), said C 60 The work functions of the material layer (12), the first material layer (13) and the second material layer (14) are sequentially increased, and the materials of the hole transport layer (10), the first material layer (13) and the second material layer (14) are different oxides; the material of the first material layer (13) comprises zinc oxide, the material of the second material layer (14) comprises tin oxide, and the C 60 The thickness of the material layer (12) is greater than the thickness of the first material layer (13) and the second material layer (14).
2. Perovskite/silicon tandem solar cell according to claim 1, characterized in that the material of the perovskite light absorbing layer (11) comprises an organic-inorganic halide perovskite material.
3. The perovskite/silicon tandem solar cell according to claim 2, wherein the organic-inorganic halide perovskite material has the structural formula ABX 3 The method comprises the steps of carrying out a first treatment on the surface of the Wherein A is MA + 、FA + At least one of cesium ions, B is lead ion, and X is at least one of iodine, bromine and chlorine.
4. Perovskite/silicon tandem solar cell according to claim 1, characterized in that the thickness of the perovskite light absorbing layer (11) is 800-1200 nm.
5. The perovskite/silicon stack solar cell of claim 1 wherein the C 60 The thickness of the material layer (12) is 40-60 nm, and the thicknesses of the first material layer (13) and the second material layer (14) are 15-20 nm.
6. Perovskite/silicon tandem solar cell according to claim 1, characterized in that the material of the hole transport layer (10) is nickel oxide.
7. Perovskite/silicon tandem solar cell according to claim 1, characterized in that the thickness of the hole transport layer (10) is 15-20 nm.
8. A method for producing a perovskite/silicon tandem solar cell, characterized in that the method is used for producing a perovskite/silicon tandem solar cell according to any one of claims 1 to 7, the method comprising:
the preparation method comprises the steps of preparing a silicon-based solar cell which sequentially comprises a first metal electrode silver layer (1), a silicon dioxide substrate layer (2), a first ITO transparent conducting layer (3), a p-type amorphous silicon layer (4), a first i-type amorphous silicon layer (5), an n-type monocrystalline silicon layer (6), a second i-type amorphous silicon layer (7) and an n-type amorphous silicon layer (8) from bottom to top;
sputtering a second ITO transparent conductive layer (9) on the n-type amorphous silicon layer (8) of the silicon-based solar cell subjected to ozone plasma treatment;
a first precursor solution is coated on the second ITO transparent conductive layer (9) in a scraping and printing way to prepare a hole transport layer (10);
A perovskite precursor solution is scraped and coated on the hole transport layer (10) by adopting a scraping and printing method to prepare a perovskite film, and then annealing treatment is carried out to obtain a perovskite light absorption layer (11);
preparation of C on the perovskite light absorbing layer (11) by evaporation 60 A material layer (12);
doctoring the second precursor solution on the C by a doctoring printing method 60 Preparing a first material layer (13) on the material layer (12);
preparing a second material layer (14) by doctor blade coating a third precursor solution on the first material layer (13) by adopting a doctor blade printing method, wherein the C 60 -the material layer (12), the first material layer (13) and the second material layer (14) constitute an electron transport layer;
-depositing a third transparent conductive layer (15) of ITO on said second material layer (14);
preparing a second metal electrode silver layer (16) on the third ITO transparent conductive layer (15);
wherein the C 60 The work functions of the material layer (12), the first material layer (13) and the second material layer (14) are sequentially increased, and the materials of the hole transport layer (10), the first material layer (13) and the second material layer (14) are different oxides; the material of the first material layer (13) comprises zinc oxide, the material of the second material layer (14) comprises tin oxide, and the C 60 The thickness of the material layer (12) is greater than the thickness of the first material layer (13) and the second material layer (14).
9. The method of manufacturing a perovskite/silicon stacked solar cell according to claim 8, wherein the first precursor solution comprises a nickel oxide precursor solution, the second precursor solution comprises a zinc oxide precursor solution, the third precursor solution comprises a tin oxide precursor solution, and the material of the hole transport layer (10) comprises nickel oxide.
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