CN114420653B - MTC silicon controlled module packaging structure and packaging method thereof - Google Patents

MTC silicon controlled module packaging structure and packaging method thereof Download PDF

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Publication number
CN114420653B
CN114420653B CN202210328798.7A CN202210328798A CN114420653B CN 114420653 B CN114420653 B CN 114420653B CN 202210328798 A CN202210328798 A CN 202210328798A CN 114420653 B CN114420653 B CN 114420653B
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welding
abutting
polar
silicon controlled
chip
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CN114420653A (en
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王伟格
金加晋
王稚程
赵廷唯
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Neil Semiconductor Shandong Co ltd
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Neil Semiconductor Shandong Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/8509—Vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/8584—Sintering

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention discloses an MTC silicon controlled module packaging structure and a packaging method thereof, relating to the technical field of semiconductors, wherein the packaging structure comprises: the device comprises a base, a silica gel protective layer, a polar S-shaped lead, an auxiliary bracket and a shell; the upper surface of the base is provided with a fixed module inner assembly, and the fixed module inner assembly comprises a chip; the silica gel protective layer covers the chip; the PCB conductive copper foil circuit board is fixed right above the chip through an S-shaped supporting piece; the two ends of the polar S-shaped lead are connected with solid tin sheets; the auxiliary support comprises an elastic arc sheet and a butting sleeve piece fixed at two ends of the elastic arc sheet, and a sleeve hole for the polar S-shaped lead to pass through is formed in the butting sleeve piece. The abutting sleeving piece can shape the molten solid tin sheet to enable a welding spot to form a circular truncated cone shape, and an insulating layer can be formed to cover the outer side of the welding spot in the cooling process to prevent the welding spot from being separated or cracked, bubbles in liquefied tin can be discharged, and the welding voidage is small.

Description

MTC silicon controlled module packaging structure and packaging method thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to an MTC silicon controlled module packaging structure and a packaging method thereof.
Background
The thyristor is a high-power semiconductor device with a four-layer structure of three PN junctions, is also called a thyristor, has the characteristics of small volume, relatively simple structure, strong function and the like, and is one of the commonly used semiconductor devices.
When present silicon controlled rectifier encapsulates, because the silicon controlled rectifier module is whole all relatively small and exquisite, when realizing welding wire between each components and parts, make the voidage of wire solder joint big easily, solder joint intensity is low, easily causes fracture or solder joint to drop, leads to the encapsulation quality not good, all has the influence of different degree to components and parts heat dissipation in the use, switch on etc..
Disclosure of Invention
The invention aims to: the MTC silicon controlled module packaging structure and the packaging method thereof are provided to solve the problems that when the silicon controlled module is packaged, the whole silicon controlled module is small, when wires among all components are welded, the voidage of welding points of the wires is easy to be large, the strength of the welding points is low, cracking or falling of the welding points is easy to be caused, and the quality of products is influenced.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides an MTC silicon controlled module packaging structure, which comprises:
the upper surface of the base is provided with a fixed module inner assembly, and the fixed module inner assembly comprises a chip;
the silica gel protective layer covers the chip;
the PCB conductive copper foil circuit board is fixed right above the chip through an S-shaped supporting piece;
the two ends of the polar S-shaped lead are connected with solid tin sheets;
the auxiliary support comprises an elastic arc sheet and two abutting sleeve pieces fixed at two ends of the elastic arc sheet, wherein the abutting sleeve pieces are provided with sleeve holes for polar S-shaped wires to pass through, and the two abutting sleeve pieces are respectively sleeved at two ends of the polar S-shaped wires and respectively abut against the welding positions of the PCB conductive copper foil circuit board and the chip;
and the shell is assembled on the base.
Furthermore, the opposite ends of the two abutting sleeve pieces are provided with abutting surfaces I which are parallel to each other.
Furthermore, the sleeving holes comprise rectangular holes larger than the volume of the solid tin sheet and through holes in clearance fit with the polarity S-shaped wires.
Furthermore, the cross section of the rectangular hole is square, four edge positions of one side, away from the through hole, of the rectangular hole are provided with a first inclined surface, the first inclined surface inclines towards one side of the through hole, a movable assembly is arranged inside the rectangular hole and comprises a movable single body capable of sliding along the first inclined surface, the movable single body is provided with a second inclined surface matched with the first inclined surface, two binding surfaces attached to adjacent movable single bodies and a second collision surface, away from one side of the through hole and parallel to the first collision edge, and one side, away from the second inclined surface, of the movable single body is provided with an extrusion groove;
the extrusion grooves of the four movable monomers surround to form a circular table cavity.
Further, the top surface of the truncated cone cavity is matched with the cross section of the polar S-shaped lead.
Further, the conflict cover is established and is included two articulated blocks of mutual articulated, two one side that its articulated shaft was kept away from to articulated block is provided with the locker.
A packaging method of an MTC silicon controlled module packaging structure comprises the following steps:
s1: assembling silicon controlled module parts by using a graphite mold;
s2: respectively assembling two abutting sleeving parts of the auxiliary support at two ends of the polar S-shaped lead, sliding the four movable single bodies to enable the solid tin sheet to be positioned between the four movable single bodies, and then pressing the elastic arc sheet to enable abutting surfaces of the two abutting sleeving parts to abut against the welding position of the PCB conductive copper foil circuit board and the chip;
s3: a vacuum welding sintering furnace is used, when the welding temperature is reached, the high pressure in the furnace is maintained, and welding is carried out under the condition of maintaining the high temperature and the high pressure;
s4: and after the welding is finished, taking down the auxiliary support, and assembling the shell and the base.
Further, in S3, a shielding gas is introduced during the vacuum welding of the sintering furnace.
Further, the protective gas is nitrogen.
Compared with the prior art, the above one or more technical schemes have the following beneficial effects:
1. according to the invention, a vacuum sintering process is used, one-time welding and sintering molding is carried out when the temperature reaches the welding temperature, high pressure in a furnace is maintained, bubbles in liquefied tin are removed by using pressure, welding and sintering are carried out under the condition of maintaining high temperature and high pressure, the welding voidage is small, solid tin sheet welding flux is used without flux pollution, a silicon gel protective layer is covered on a chip to increase mechanical protection, heat dissipation is enhanced to reduce the junction temperature of the chip so as to improve the reliability, and the polar S-shaped lead can release heat stress accumulation so as to improve the reliability.
2. The abutting sleeving piece can shape the molten solid tin sheet to enable a welding spot to form a circular truncated cone shape, and an insulating layer can be formed to cover the outer side of the welding spot in the cooling process to prevent the welding spot from being separated or cracked, bubbles in liquefied tin can be discharged, and the welding voidage is small.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention.
In the drawings:
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of the present invention with the outer shell removed;
FIG. 3 is a schematic view of the structure of the auxiliary stand and the polar S-shaped lead according to the present invention;
FIG. 4 is a schematic side sectional view of FIG. 3;
FIG. 5 is a schematic view of a portion of the structure of FIG. 4 at A;
FIG. 6 is a schematic view of the structure of the interference fit member and the polar S-shaped conductive wire according to the present invention;
FIG. 7 is a schematic view of a structure of the interference fit member of the present invention;
fig. 8 is a schematic structural view of the interference fit member of the present invention after being opened.
In the figure:
1. a base; 2. fixing the module inner assembly; 3. a chip; 4. a polar S-shaped wire; 5. a PCB conductive copper foil circuit board; 6. an S-shaped support member; 7. a solid tin sheet; 8. an elastic arc piece; 9. sleeving a piece; 10. sleeving a hole; 11. a rectangular hole; 12. a through hole; 13. a first inclined plane; 14. a movable monomer; 15. a second inclined plane; 16. a binding face; 17. a first abutting surface; 18. a second abutting surface; 19. extruding a groove; 20. a circular table cavity; 91. a hinged block; 21. a housing.
Detailed Description
In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only partial embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the application described herein may be used. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In this application, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.
Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meaning of these terms in this application will be understood by those of ordinary skill in the art as appropriate.
Furthermore, the terms "mounted," "disposed," "provided," "connected," and "sleeved" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
Referring to fig. 1 to 8, the present invention provides an MTC silicon controlled module package structure, including: a base 1, the upper surface of which is provided with a fixed module 2, the fixed module 2 comprises a chip 3; a silica gel protective layer covering the chip 3; the PCB conductive copper foil circuit board 5 is fixed right above the chip 3 through an S-shaped support piece 6; the two ends of the polar S-shaped lead 4 are connected with solid tin sheets 7; the auxiliary support comprises an elastic arc sheet 8 and abutting sleeving pieces 9 fixed at two ends of the elastic arc sheet 8, wherein the abutting sleeving pieces 9 are provided with sleeving holes 10 for the polar S-shaped wires 4 to pass through, and the two abutting sleeving pieces 9 are respectively sleeved at two ends of the polar S-shaped wires 4 and respectively abutted against the welding positions of the PCB conductive copper foil circuit board 5 and the chip 3; and a housing 21 mounted on the base 1.
The chip 3 is covered with the silica gel protective layer, so that mechanical protection is increased, heat dissipation is enhanced, crystallization of the chip 3 is reduced, and reliability is improved.
The setting of auxiliary stand, when the assembly, press elasticity arc piece 8 and make elasticity arc piece 8 take place deformation, and then make the conflict cover at 8 both ends of elasticity arc piece establish 9 and contradict respectively in PCB conductive copper foil circuit board 5 and 3 junctions of chip, and then fix the solid state tin piece 7 of the tip of polarity S type wire 4 in PCB conductive copper foil circuit board 5 and 3 junctions of chip, fix a position solid state tin piece 7, and polarity S type wire 4 can release the thermal stress accumulation and improve the reliability.
Furthermore, the opposite ends of the two abutting sleeve members 9 have abutting surfaces 17 parallel to each other. The stability of location has been improved.
Further, the sleeving holes 10 comprise rectangular holes 11 larger than the volume of the solid tin sheet 7 and through holes 12 in clearance fit with the polarity S-shaped wires 4. Rectangular hole 11 has played the effect of heat preservation, when the cooling, prevents that solid tin 7 skin and the inside refrigerated temperature gradient cooling of solid tin 7 are too big, leads to the solder joint to appear the crack.
Furthermore, the cross section of the rectangular hole 11 is square, four edge positions of one side, away from the through hole 12, of the rectangular hole 11 are respectively provided with a first inclined plane 13, the first inclined plane 13 inclines towards one side of the through hole 12, a movable assembly is arranged inside the rectangular hole 11 and comprises a movable single body 14 capable of sliding along the first inclined plane 13, the movable single body 14 is provided with a second inclined plane 15 matched with the first inclined plane 13, two binding surfaces 16 bound with the adjacent movable single bodies 14 and a second contact surface 18 far away from one side of the through hole 12 and parallel to the first contact surface 17, and one side, away from the second inclined plane 15, of the movable single body 14 is provided with an extrusion groove 19; the extrusion grooves 19 of the four movable single bodies 14 surround to form a circular platform cavity 20. When not welding, the second 18 of conflict face of activity monomer 14 is higher than the first 17 of conflict face (as shown in fig. 5), the separation of activity monomer 14 this moment, have the clearance between the adjacent activity monomer 14, solid-state tin piece 7 card is established between four activity monomers 14, under the condition of high temperature, solid-state tin piece 7 melts, under the elastic action of elastic arc piece 8, four activity monomers 14 slide along four corresponding inclined planes 13 respectively, after laminating each other of binding face 16 of four activity monomers 14, the round platform chamber 20 that forms can carry out "plastic" to melting solid-state tin piece and make the solder joint form the round platform form, on the one hand when cooling, four activity monomers 14 form the heat preservation cladding in the solder joint outside, prevent that the solder joint breaks away from or the fracture, on the other hand extrudes melting solid-state tin piece and discharges the bubble in the liquefied tin, the welding void fraction is little.
Further, the top surface of the circular truncated cone cavity 20 is matched with the cross section of the polar S-shaped lead 4. The end of the polar S-shaped lead 4 is bound to prevent the thermal stress at the end of the polar S-shaped lead 4 from pulling the welding.
Further, the abutting sleeve piece 9 comprises two hinged blocks 91 which are hinged to each other, and a locker is arranged on one side, away from a hinged shaft, of the two hinged blocks 91. After the welding is completed, the auxiliary support can be removed.
The packaging method of the MTC silicon controlled module packaging structure comprises the following steps:
s1: assembling silicon controlled module parts by using a graphite mold; the mould is a graphite jig for wafer packaging, is an existing process jig in the semiconductor industry, because a semiconductor application process needs to operate in a high-temperature clean dust-free environment, graphite becomes the most appropriate material, high-purity graphite and a very precise processing technology are used, the development of the semiconductor industry is inseparable from the graphite, the graphite is a very key material in the semiconductor industry, a special wafer packaging graphite jig is provided for a vacuum furnace, the graphite is mainly used for assembling silicon controlled module parts so as to facilitate subsequent vacuum welding and sintering, because the melting point of the graphite is 3850 +/-50 ℃ and the boiling point is 4250 ℃, even if the graphite is burnt by an ultrahigh-temperature electric arc, the weight loss is very small, the thermal expansion coefficient is also very small, no deviation is caused in the welding process, and the packaging quality is favorably ensured. The graphite mold is a conventional technology, and the graphite mold is not further described in the application;
s2: assembling two abutting sleeving parts 9 of the auxiliary support at two ends of the polarity S-shaped lead 4 respectively, sliding the four movable single bodies 14 to enable the solid tin sheet 7 to be positioned among the four movable single bodies 14, and then pressing the elastic arc sheet 8 to enable abutting surfaces one 17 of the two abutting sleeving parts 9 to abut against the welding position of the PCB conductive copper foil circuit board 5 and the chip 3;
s3: a vacuum welding sintering furnace is used, when the temperature reaches 250 ℃, the high pressure in the furnace is maintained, and welding is carried out under the condition of maintaining high temperature and high pressure;
s4: after the welding is completed, the auxiliary bracket is removed, and the housing 21 is assembled with the base 1.
Further, in S3, a shielding gas is introduced during the vacuum welding of the sintering furnace.
Further, the protective gas is nitrogen.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art.

Claims (6)

1. An MTC silicon controlled module packaging structure is characterized by comprising:
the upper surface of the base is provided with a fixed module inner assembly, and the fixed module inner assembly comprises a chip;
the silica gel protective layer covers the chip;
the PCB conductive copper foil circuit board is fixed right above the chip through an S-shaped supporting piece;
the two ends of the polar S-shaped lead are connected with solid tin sheets;
the auxiliary support comprises an elastic arc sheet and two abutting sleeve pieces fixed at two ends of the elastic arc sheet, wherein the abutting sleeve pieces are provided with sleeve holes for polar S-shaped wires to pass through, and the two abutting sleeve pieces are respectively sleeved at two ends of the polar S-shaped wires and respectively abut against the welding positions of the PCB conductive copper foil circuit board and the chip;
a housing assembled on the base;
one end of each of the two abutting sleeving pieces, which is back to the other end, is provided with a first abutting surface which is parallel to each other;
the sleeving holes comprise rectangular holes larger than the volume of the solid tin sheet and through holes in clearance fit with the polar S-shaped wires;
the cross section of the rectangular hole is square, four edge positions of one side, away from the through hole, of the rectangular hole are respectively provided with a first inclined plane, the first inclined plane inclines towards one side of the through hole, a movable assembly is arranged inside the rectangular hole and comprises a movable single body capable of sliding along the first inclined plane, the movable single body is provided with a second inclined plane matched with the first inclined plane, two binding surfaces attached to adjacent movable single bodies and a second abutting surface, away from one side of the through hole and parallel to the first abutting surface, and one side, away from the second inclined plane, of the movable single body is provided with an extrusion groove;
the extrusion grooves of the four movable single bodies surround to form a circular table cavity;
and when reaching the welding temperature, maintaining high pressure in the furnace, and welding under the condition of keeping high temperature and high pressure.
2. The MTC silicon controlled module package structure of claim 1, wherein a top surface of the truncated cone cavity is adapted to a cross section of the polar S-shaped conducting wire.
3. The MTC silicon controlled module packaging structure of claim 2, wherein the abutting sleeve component comprises two hinged blocks hinged to each other, and a locker is arranged on one side of each hinged block away from a hinged shaft of the hinged block.
4. The packaging method of the MTC silicon controlled module packaging structure according to claim 3, comprising the following steps:
s1: assembling silicon controlled module parts by using a graphite mold;
s2: respectively assembling two abutting sleeving parts of the auxiliary support at two ends of the polar S-shaped lead, sliding the four movable single bodies to enable the solid tin sheet to be positioned between the four movable single bodies, and then pressing the elastic arc sheet to enable one abutting surface of the two abutting sleeving parts to abut against the welding position of the PCB conductive copper foil circuit board and the chip;
s3: using a vacuum welding sintering furnace, maintaining high pressure in the furnace when the welding temperature is reached, and welding under the condition of maintaining high temperature and high pressure;
s4: and after the welding is finished, taking down the auxiliary support, and assembling the shell and the base.
5. The packaging method of the MTC silicon controlled module packaging structure according to claim 4, wherein: in S3, a protective gas is introduced during the vacuum welding of the sintering furnace.
6. The packaging method of the MTC silicon controlled module packaging structure according to claim 5, wherein: the protective gas is nitrogen.
CN202210328798.7A 2022-03-31 2022-03-31 MTC silicon controlled module packaging structure and packaging method thereof Active CN114420653B (en)

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CN114420653B true CN114420653B (en) 2022-07-01

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