CN114420591A - Low-thermal-resistance GaN eutectic device in SiP package and preparation method - Google Patents
Low-thermal-resistance GaN eutectic device in SiP package and preparation method Download PDFInfo
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- CN114420591A CN114420591A CN202111616901.XA CN202111616901A CN114420591A CN 114420591 A CN114420591 A CN 114420591A CN 202111616901 A CN202111616901 A CN 202111616901A CN 114420591 A CN114420591 A CN 114420591A
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- 230000005496 eutectics Effects 0.000 title claims abstract description 67
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000004806 packaging method and process Methods 0.000 claims abstract description 7
- 238000005289 physical deposition Methods 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 27
- 239000000956 alloy Substances 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 4
- 238000005234 chemical deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 4
- 238000003466 welding Methods 0.000 abstract description 4
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a low-thermal resistance GaN eutectic device in SiP packaging and a preparation method thereof, and relates to the technical field of microelectronic engineering. According to the technical scheme provided by the invention, on the basis of the traditional eutectic welding equipment, the physical deposition and the eutectic of the film are combined to obtain the low-thermal-resistance GaN eutectic joint, so that the junction temperature is effectively reduced, and the method has an extremely important significance for prolonging the service life of a GaN power device.
Description
Technical Field
The invention relates to the technical field of microelectronic engineering, in particular to a low-thermal resistance GaN eutectic device in SiP packaging and a preparation method thereof.
Background
The GaN material has the unique advantages of wide band gap, high breakdown field strength, high electron saturation velocity and the like, is suitable for high-power devices and high-frequency microwave devices, has high attention in the fields of mobile communication, radars, electronic countermeasure and the like, and becomes the most ideal semiconductor material for developing microwave power chips in recent years. However, the thermal management problem in GaN material application has become a major technical bottleneck in GaN device application and development at the present stage, the increase of GaN device junction temperature leads to exponential reduction of GaN device lifetime, especially in radio frequency multi-chip System Integrated Package (SIP), complex structures are usually involved, which include mutual influence of heating sources such as GaN microwave power chips, control chips, etc., so the thermal management technology research in SIP package has become one of the key technologies for GaN microwave power chip development and application. The GaN microwave power chip mainly adopts two modes of eutectic welding and cementation in the prior packaging, the welding flux sheet and the adhesive have certain thickness, certain thermal resistance exists, and the process is complex.
Disclosure of Invention
The invention aims to provide a low-thermal resistance GaN eutectic device in SiP packaging and a preparation method thereof, and aims to solve the problems in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme:
a low-thermal resistance GaN eutectic device in SiP packaging is used for obtaining an eutectic sample of a GaN microwave power chip and a heat sink and comprises the eutectic sample and an eutectic system, wherein the eutectic sample is arranged in the eutectic system, the eutectic system comprises a container with an open upper surface, a cavity cover, a vacuum pipeline unit and a main control unit, the container is connected into a closed cavity formed by the container through a data line, one end of the vacuum pipeline unit is connected into the closed cavity formed by the container, and the cavity cover is arranged at the top of the container;
a heating table is arranged in a closed cavity formed by the container, an objective table is arranged on the heating table, the eutectic sample is placed on the objective table, and a temperature sensor for measuring the surface temperature of the heating table is arranged on one side, back to the vacuum pipeline unit, of the upper surface of the heating table;
the vacuum pipeline unit comprises a digital pressure gauge, a vacuum valve and a vacuum pump, and the vacuum pump is connected to one side of the container through the vacuum valve and the digital pressure gauge in sequence.
Further, the eutectic system further comprises an inflation valve, one end of the inflation valve is connected with the other side of the container, and the other end of the inflation valve is connected with an external inflation tank.
Further, a closed cavity cover is arranged at the top of the container.
Further, the container also comprises a pressing block, and the size of the pressing block is consistent with that of the object stage.
The invention provides a preparation method of the low-thermal resistance GaN eutectic crystal in the SiP package, which comprises the following steps:
step S1, placing the eutectic sample on an object stage, placing a pressing block above the object stage, and then placing a cavity cover on the top of the container;
step S2, opening a vacuum valve, pumping air in the container by using a vacuum pump, starting heating the heating table after the digital pressure gauge displays a negative pressure state, and turning off the heating table until the heating table is heated to a preset temperature;
and step S3, filling nitrogen into the container through the air charging valve, opening the cavity cover after the container is cooled to the room temperature, and obtaining the eutectic sample.
Further, the eutectic sample comprises an alloy layer and a GaN microwave power chip, and is obtained by depositing the alloy layer on the high-thermal-conductivity heat sink through the GaN microwave power chip.
Further, the material of the alloy layer is any one of an alloy, a single metal, or a non-metal material.
Further, the thickness of the alloy layer is
。
Further, the eutectic sample is obtained by physical deposition or chemical deposition, and the deposition temperature is 100-350 ℃.
Compared with the prior art, the invention discloses a low-thermal resistance GaN eutectic device in SiP packaging and a preparation method thereof, and the technical scheme has the following technical effects:
according to the invention, on the basis of the traditional eutectic welding equipment, the physical deposition and the eutectic of the film are combined to obtain the low-thermal-resistance GaN eutectic joint, so that the junction temperature is effectively reduced, and the method has an extremely important significance for prolonging the service life of a GaN power device.
Drawings
FIG. 1 is a schematic diagram of a eutectic system in accordance with an exemplary embodiment of the present invention;
FIG. 2 is a schematic illustration of a eutectic sample, in accordance with an exemplary embodiment of the present invention;
FIG. 3 is a schematic illustration of a eutectic sample deposited with an AuSn alloy in accordance with an exemplary embodiment of the present invention;
in the figure, 1-container, 2-cavity cover, 3-vacuum pump, 4-main control unit, 5-digital pressure gauge, 6-vacuum valve, 7-inflation valve, 8-objective table, 9-briquetting, 11-heating table, 12-temperature sensor, 20-eutectic sample, 21-alloy layer and 22-GaN microwave power chip.
Detailed Description
In order to better understand the technical content of the present invention, specific embodiments are described below with reference to the accompanying drawings.
Aspects of the invention are described herein with reference to the accompanying drawings, in which a number of illustrative embodiments are shown. Embodiments of the invention are not limited to those shown in the drawings. It is to be understood that the invention is capable of implementation in any of the numerous concepts and embodiments described hereinabove or described in the following detailed description, since the disclosed concepts and embodiments are not limited to any embodiment. In addition, some aspects of the present disclosure may be used alone, or in any suitable combination with other aspects of the present disclosure.
Referring to fig. 1 to 2, the SiP-packaged low-thermal resistance GaN eutectic device is used for obtaining an eutectic sample of a GaN microwave power chip and a heat sink, and comprises an eutectic sample 20 and an eutectic system, wherein the eutectic sample 20 passes through a low-temperature alloy layer 21 deposited on the heat sink with high thermal conductivity, the eutectic system comprises a container 1, a vacuum pipeline unit and a main control unit 4, the main control unit 4 is connected into a closed cavity formed by the container 1 through a data line, and the vacuum pipeline unit is connected into the closed cavity formed by the container 1;
an object stage 8 is arranged in a closed cavity formed by the container 1, the eutectic sample 20 is arranged on the object stage 8, a heating table 11 is arranged below the object stage 8, a temperature sensor 12 is arranged on one side, away from the vacuum pipeline unit, of the object stage 8, one side of the temperature sensor 12 is connected with the main control unit 4, the temperature sensor 12 acquires temperature data of the current heating table 11 and automatically controls the temperature data through the main control unit 4, a closed cavity cover 2 is arranged at the top of the container 1, a pressing block 9 is further arranged in the container 1, and the size of the pressing block 9 is consistent with that of the object stage 8;
the vacuum pipeline unit comprises a digital pressure gauge 5, a vacuum valve 6 and a vacuum pump 3, wherein the vacuum pump 3 is connected to one side of the container 1 through the vacuum valve 6 and the digital pressure gauge 5 in sequence.
The eutectic system further comprises an inflation valve 7, one end of the inflation valve 7 is connected with the other side of the container 1, and the other end of the inflation valve 7 is connected with an external inflation tank.
A preparation method of a low-thermal resistance GaN eutectic crystal in a SiP package comprises the following steps:
step S1, placing the eutectic sample 20 on the object stage 8, placing the pressing block 9 above the object stage 8, and then placing the cavity cover 2 on the top of the container 1, wherein the eutectic sample 20 comprises an alloy layer 21 and a GaN microwave power chip 22, the eutectic sample 20 is obtained by depositing the alloy layer 21 on a high heat conduction heat sink through the GaN microwave power chip 22, the alloy layer 21 is made of any one of an alloy, a single metal or a nonmetal material, and the thickness of the alloy layer 21 is equal to
The eutectic sample 20 is obtained by physical deposition or chemical deposition, and the deposition temperature is 100-350 ℃;
step S2, opening the vacuum valve 6, pumping out air in the container 1 by using the vacuum pump 3, starting heating the heating table 11 after the digital pressure gauge 5 displays a negative pressure state, and turning off the heating table 11 until the heating table 11 is heated to a preset temperature;
and step S3, filling nitrogen into the container 1 through the inflation valve 7, and opening the cavity cover 2 after the container 1 is cooled to the room temperature to obtain the eutectic sample.
The process of obtaining a eutectic sample was: pumping out air in the container 1, starting heating after forming a negative pressure state, keeping the negative pressure, turning off the heating table 11 after reaching a set temperature, reducing the temperature in the container 1 to 30 ℃, and then filling nitrogen gas for cooling to room temperature; and opening the cavity cover 2, and taking out the eutectic sample 20 of the GaN microwave power chip and the heat sink.
In the embodiment of the method, the first step,
referring to fig. 3, a layer of AuSn alloy is deposited on the surface of the GaN microwave power chip 22 through a high thermal conductivity heat sink, the AuSn alloy is used as an alloy layer 21, and the thickness is 2
Placing a GaN microwave power chip 22 on the surface, integrally placing the GaN microwave power chip in a low-thermal resistance GaN eutectic device, vacuumizing, heating to 315 ℃, cooling, releasing vacuum, and taking out a sample to obtain the eutectic sample 20 with low thermal resistance.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the protection scope of the present invention should be determined by the appended claims.
Claims (8)
1. A SiP packaged low-and-medium-thermal-resistance GaN eutectic device is used for obtaining an eutectic sample of a GaN microwave power chip and a heat sink, and is characterized by comprising an eutectic sample (20) and an eutectic system, wherein the eutectic system comprises a container (1) with an open upper surface, a cavity cover (2), a vacuum pipeline unit and a main control unit (4), the main control unit (4) is connected into a closed cavity formed by the container (1) through a data line, one end of the vacuum pipeline unit is connected into the closed cavity (1) formed by the container (1), and the cavity cover (2) is arranged at the top of the container (1);
a heating table (11) is arranged in a closed cavity formed by the container (1), an objective table (8) is arranged on the heating table (11), the eutectic sample (20) is arranged on the objective table (8), and a temperature sensor (12) for measuring the surface temperature of the heating table is arranged on one side, back to the vacuum pipeline unit, of the upper surface of the heating table (11);
the vacuum pipeline unit comprises a digital pressure gauge (5), a vacuum valve (6) and a vacuum pump (3), wherein the vacuum pump (3) is connected to one side of the container (1) through the vacuum valve (6) and the digital pressure gauge (5) in sequence.
2. The low thermal resistance GaN eutectic device in the SiP package of claim 1, wherein the eutectic system further comprises a gas filling valve (7), one end of the gas filling valve (7) is connected with the other side of the container (1), and the other end of the gas filling valve (7) is connected with an external gas filling tank.
3. The low thermal resistance GaN eutectic device in the SiP package of claim 1, wherein the container (1) further comprises a compact (9), and the size of the compact (9) is consistent with that of the stage (8).
4. A preparation method of low-thermal resistance GaN eutectic crystal in SiP packaging is characterized by comprising the following steps:
s1, placing the eutectic sample (20) on an object stage (8), placing a pressing block (9) above the object stage (8), and then placing a cavity cover (2) on the top of the container (1);
step S2, opening a vacuum valve (6), pumping air in the container (1) by using a vacuum pump (3), starting heating the heating table (11) after the digital pressure gauge (5) displays a negative pressure state, and turning off the heating table (11) until the heating table (11) is heated to a preset temperature;
and step S3, filling nitrogen into the container (1) through the air charging valve (7), and opening the cavity cover (2) after the container (1) is cooled to the room temperature to obtain the eutectic sample.
5. The method for preparing the GaN eutectic crystal with low thermal resistance in the SiP package according to claim 4, wherein the eutectic sample (20) comprises an alloy layer (21) and a GaN microwave power chip (22), and the eutectic sample (20) is obtained by depositing the alloy layer (21) on a high thermal conductivity heat sink through the GaN microwave power chip (22).
6. The method for preparing the GaN eutectic crystal with low thermal resistance in the SiP package according to claim 5, wherein the alloy layer (21) is made of any one of an alloy, a single metal and a non-metal material.
7. The method for preparing the GaN eutectic crystal with low thermal resistance in the SiP package according to claim 5, wherein the thickness of the alloy layer (21) is set as
。
8. The method for preparing the GaN eutectic crystal with low thermal resistance in the SiP package according to claim 4, wherein the eutectic sample (20) is obtained by physical deposition or chemical deposition, and the deposition temperature is 100-350 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111616901.XA CN114420591A (en) | 2021-12-27 | 2021-12-27 | Low-thermal-resistance GaN eutectic device in SiP package and preparation method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111616901.XA CN114420591A (en) | 2021-12-27 | 2021-12-27 | Low-thermal-resistance GaN eutectic device in SiP package and preparation method |
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| CN114420591A true CN114420591A (en) | 2022-04-29 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102528194A (en) * | 2010-12-15 | 2012-07-04 | 无锡华测电子系统有限公司 | Vacuum eutectic welding method |
| CN104934336A (en) * | 2015-04-28 | 2015-09-23 | 华东光电集成器件研究所 | Eutectic chip soldering method |
| CN105023855A (en) * | 2015-05-29 | 2015-11-04 | 哈尔滨工业大学深圳研究生院 | Chip bonding method for fast generating high-melting-point joint and ultrasonic pressure head design |
| US20180033717A1 (en) * | 2015-09-23 | 2018-02-01 | Guangzhou Ledteen Optoelectronics Co., Ltd | Vacuum reacting force welding method and device thereof |
| CN112151399A (en) * | 2019-06-28 | 2020-12-29 | 深圳市华达微波科技有限公司 | Carrier welding method of eutectic power chip |
-
2021
- 2021-12-27 CN CN202111616901.XA patent/CN114420591A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102528194A (en) * | 2010-12-15 | 2012-07-04 | 无锡华测电子系统有限公司 | Vacuum eutectic welding method |
| CN104934336A (en) * | 2015-04-28 | 2015-09-23 | 华东光电集成器件研究所 | Eutectic chip soldering method |
| CN105023855A (en) * | 2015-05-29 | 2015-11-04 | 哈尔滨工业大学深圳研究生院 | Chip bonding method for fast generating high-melting-point joint and ultrasonic pressure head design |
| US20180033717A1 (en) * | 2015-09-23 | 2018-02-01 | Guangzhou Ledteen Optoelectronics Co., Ltd | Vacuum reacting force welding method and device thereof |
| CN112151399A (en) * | 2019-06-28 | 2020-12-29 | 深圳市华达微波科技有限公司 | Carrier welding method of eutectic power chip |
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