CN114418206B - ESD field control method on GaN product - Google Patents
ESD field control method on GaN product Download PDFInfo
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Abstract
The invention provides an ESD field control method on a GaN product, which comprises the following steps: acquiring a first electrostatic influence on a GaN product generated in a separation process of the GaN product and a UV film based on an old cutting and separating process; redesigning the separation environment of the GaN product and the UV film based on the first electrostatic influence, and optimizing the dicing separation old flow; the method and the device for achieving the separation of the GaN product and the UV film based on the optimized cutting separation process obtain the second electrostatic influence on the GaN product in the separation process of the GaN product and the UV film, and evaluate the ESD field management and control operation based on the second electrostatic influence.
Description
Technical Field
The invention relates to the technical field of optimization of a GaN product ESD (electro-static discharge) control flow, in particular to an on-site control method for an ESD on a GaN product.
Background
At present, in the prior art, the withstand voltage value of a GaN product against static electricity is generally not more than 250V, the UV film is used for preventing static electricity in the cutting and separating process of the GaN product, and static electricity of several kilovolts is usually generated in the stripping process, so that different degrees of static electricity damage are caused to the GaN product, the static electricity damage is difficult to be found in the reliability and daily first inspection process in the initial stage of the production of the product, the static electricity damage is found in succession in the use process of a terminal customer, and finally, irreparable economic losses are caused to companies and customers;
Therefore, the invention provides an ESD field control method on a GaN product, which is aimed at optimizing an ESD control flow of the GaN product and can improve the yield of the GaN product.
Disclosure of Invention
The invention provides an ESD field control method on a GaN product, which is used for effectively controlling the impact of static electricity generated by a UV film on the GaN product in the separation process of the GaN product and the UV film, so as to improve the yield of the GaN product in mass production.
The invention provides an ESD field control method on a GaN product, which comprises the following steps:
step 1: acquiring a first electrostatic influence on a GaN product generated in a separation process of the GaN product and a UV film based on an old cutting and separating process;
step 2: redesigning the separation environment of the GaN product and the UV film based on the first electrostatic influence, and optimizing the dicing separation old flow;
step 3: and acquiring a second electrostatic influence on the GaN product in the separation process of the GaN product and the UV film based on the new optimized cutting and separating process, and evaluating the ESD field management and control operation based on the second electrostatic influence.
In one possible implementation manner, in step 1, obtaining a first electrostatic influence on a GaN product during separation of the GaN product from a UV film based on an old process of dicing separation includes:
Step 1.1: measuring a rubbing voltage generated in a process of separating the GaN product from the UV film based on the old process of cutting and separating;
step 1.2: confirming whether the friction voltage reaches the maximum value of the sustainable friction voltage of the GaN product, if not, judging that the current friction is safe for the GaN product;
if the friction voltage reaches the maximum sustainable friction voltage value, acquiring an exceeding voltage value of the friction voltage based on the maximum sustainable friction voltage value;
step 1.3: and comparing the excess voltage value with an electrostatic influence measurement standard, and determining a first electrostatic influence on the GaN product in the separation process of the GaN product and the UV film based on the old cutting separation process.
In one possible implementation, in step 2, redesigning the separation environment of the GaN product from the UV film based on the first electrostatic influence, including:
step 2.1: determining a damage degree of the currently generated static electricity to each GaN product based on the first static electricity influence;
step 2.2: based on the damage degree, counting the damage rate of all the current GaN products;
step 2.3: and when the damage rate reaches a preset damage rate, judging that the GaN product and the UV film are not suitable for being separated in the current separation environment, and redesigning the separation environment of the GaN product and the UV film.
In one possible implementation manner, in step 2, optimizing the old flow of cutting separation includes:
step 2.4: acquiring risk points existing in each operation step in the old cutting and separating process;
step 2.5: acquiring the layout situation of the risk points in all steps;
step 2.6: determining an abnormality step in which a risk point exists based on the layout condition;
step 2.7: and optimizing the abnormal step according to the severity of the risk points existing in the abnormal step.
In one possible implementation manner, in step 2.4, acquiring a risk point existing in each operation step in the old cutting and separating process includes:
acquiring state change information of the GaN product based on each operation step in the process of executing the cutting and separating old flow, acquiring a monitoring video of a first operation step corresponding to the first change information in the executing process when the first change information in the state change information meets a preset condition, and determining operation characteristics corresponding to the first operation step based on the monitoring video;
and calling a historical risk record table corresponding to the old cutting and separating process, and comparing the first change information with the operation characteristics in the historical risk record table to determine risk points existing in the first operation step.
In one possible implementation manner, in step 2.7, optimizing the abnormal step according to the severity of the risk point where the abnormal step exists includes:
acquiring a state transition process of the GaN product in the process of executing the abnormal step, and acquiring all abnormal states in the state transition process;
acquiring the degree of abnormality of each state in all abnormal states and the duration of the corresponding degree of abnormality, and determining the severity of risk points existing in the abnormal step;
and formulating an optimization scheme corresponding to the severity degree, and completing the optimization task of the abnormal step based on the optimization scheme.
In one possible implementation, after optimizing the anomaly step, evaluating an optimization quality includes:
acquiring a first number corresponding to the optimized abnormal steps and a second number corresponding to all the abnormal steps in the old cutting and separating process;
based on the first quantity and the second quantity, preliminarily determining an optimization rate corresponding to the abnormal step;
when the optimization rate is greater than or equal to a preset optimization rate, acquiring step sequences corresponding to all optimized abnormal steps, and monitoring the execution process of all optimized abnormal steps in real time according to the step sequences to acquire behavior characteristic information of each operation action in each optimized abnormal step and first conversion characteristic information between adjacent operation actions;
Meanwhile, obtaining second conversion characteristic information of operation actions corresponding to optimized adjacent abnormal steps;
traversing the behavior characteristic information, the first conversion characteristic information and the second conversion characteristic information according to an optimization standard, and determining normalization of operation actions corresponding to the optimized abnormal steps;
detecting a first static amount and a second static amount generated by separating the GaN product from the UV film under the abnormal steps before and after optimization, and determining a neutralization static amount based on the first static amount and the second static amount;
detecting a first characteristic change parameter of the GaN product in the process of executing an abnormal step before optimization, and acquiring a first change set of the first characteristic change parameter in a preset time;
detecting a second characteristic change parameter of the GaN product in the process of executing the optimized abnormal step, and acquiring a second change set of the second characteristic change parameter in the same preset time;
determining the same parameters in the first characteristic change parameters and the second characteristic change parameters, extracting change sets corresponding to the same parameters based on the first change set and the second change set respectively, and determining corresponding first set differences;
Acquiring a difference parameter of the second characteristic change parameter based on the first characteristic change parameter, and extracting a second set difference corresponding to the difference parameter;
determining an adaptability of the GaN product to the optimized abnormal step based on the first set of differences and the second set of differences;
respectively taking the normalization, the neutralization static quantity and the adaptability as evaluation indexes, evaluating the optimization quality of the abnormal step, and displaying the evaluation result on the mobile terminal;
when the optimization rate is smaller than a preset optimization rate, judging that the current optimization work of the abnormal step is invalid, reformulating an optimization scheme corresponding to the abnormal step, and continuing to optimize the abnormal step based on the optimization scheme.
In one possible implementation manner, in step 3, obtaining a second electrostatic influence on the GaN product in the process of separating the GaN product from the UV film based on the new process of dicing separation obtained after optimization includes:
measuring electrostatic voltage generated in the process of separating each GaN product from a corresponding UV film in all GaN products under the new cutting and separating process;
Acquiring corresponding performance characteristics and morphological characteristics of each GaN product based on the electrostatic voltage;
acquiring a first influence of the morphological feature on the performance feature, and simultaneously acquiring a second influence of the morphological feature on each GaN product;
the importance of the performance characteristics and the morphological characteristics on each GaN product is respectively obtained, and the importance is used as a first influence weight value and a second influence weight value;
acquiring a third influence weight value of the morphological feature on the performance feature;
and determining a second electrostatic influence on the GaN product in the separation process of the GaN product and the UV film under the new cutting and separating process based on the first influence, the first influence weight value, the third influence weight value, the second influence and the second influence weight value.
In one possible implementation, in step 3, evaluating an ESD field management operation based on the second electrostatic influence includes:
acquiring a target influence object corresponding to the second electrostatic influence and the influence degree corresponding to each target influence object;
judging whether the influence degree reaches a preset influence degree, if so, acquiring all the evaluable indexes of the target influence object based on the GaN product and the evaluation scores corresponding to all the evaluable indexes, determining the comprehensive evaluation score of the target influence object based on the weight value of each evaluable index in all the evaluation indexes and the corresponding evaluation score, and determining the importance of the target influence object to the GaN product based on the comprehensive evaluation score;
The monitoring video corresponding to the GaN product and the UV film in the separation process based on the new cutting and separating process is called, and meanwhile, a verification model matched with a separation environment corresponding to the new cutting and separating process is obtained;
the importance is subjected to first priority ranking, a first verification sequence of the target influence objects is preliminarily determined based on a first priority ranking result, when the situation that the ranking numbers of a plurality of target influence objects are the same exists, linear interval distances between the plurality of target influence objects and initial positions of the verification model are respectively obtained, and second priority ranking is performed according to the linear interval distance;
when the situation that the linear interval distances are the same exists, the corresponding linear interval distance is taken as a radius, the initial position is taken as a central position, a track to be verified is constructed, a preset position on the track to be verified is taken as an initial position, all target influence objects on the track to be verified are determined along the clockwise direction based on the initial position, and third priority ranking is carried out on all target influence objects;
updating the first verification sequence based on the second priority ordering result and the third priority ordering result to obtain a second verification sequence;
In the monitoring video, controlling the verification model to verify each operation step of each target influence object in all target influence objects in the new cutting and separating process according to a second verification sequence, and taking a verification result as a first evaluation index;
acquiring an actual static amount in a process of separating the GaN product from the UV film based on the new cutting and separating process, determining safety corresponding to the actual static amount, and taking the safety as a second evaluation index;
detecting abnormal times of the GaN product in the working process after cutting and separating treatment, and taking the abnormal times as a third evaluation index;
and determining an evaluation result of the ESD field management operation based on the first evaluation index, the second evaluation index, the third evaluation index and the corresponding weight value.
In one possible implementation, after evaluating the ESD field management operation, the method further comprises: when the evaluation result of the ESD field management and control operation is unqualified, confirming whether the impact degree of static electricity generated in the separation process of the GaN product and the UV film on the GaN product reaches a preset degree or not under the new cutting and separation process, if so, detecting the impact reason corresponding to the impact degree, and reminding to carry out corresponding correction processing based on the detected impact reason.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims thereof as well as the appended drawings.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a general flow chart of a method for on-site ESD management on GaN products according to an embodiment of the invention;
FIG. 2 is a flow chart of acquiring a first electrostatic influence according to an embodiment of the present invention;
FIG. 3 is a flow chart of redesigning a separation environment in an embodiment of the invention.
Detailed Description
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings, it being understood that the preferred embodiments described herein are for illustration and explanation of the present invention only, and are not intended to limit the present invention.
Old process of cutting and separating GaN product:
1. The UV film is pasted (1. The product is fixed in a fixing clamping groove of a film pasting machine; 2. A fixing steel ring; 3. The UV film is pasted), and no risk point exists;
2. cutting and separating (1, putting a product attached with the UV film into cutting equipment, 2, taking out the edge of the cut frame, and continuing production), wherein no risk point exists;
3. cleaning: taking out the cut product and putting the product into a cleaning machine, wherein no risk point exists;
4. solution UV: taking out the cleaned product, putting the product into a glue-removing machine to remove the UV film, wherein no risk point exists;
5. picking defective products: picking up the forked product with a tool and then pinching off with forceps, wherein the risk points present are: when defective products are picked, the tool is scraped and rubbed to the good product beside;
6. normal peeling: placing the product with the defective products picked up under an ion fan, and separating the product from the UV film by using a scraping blade, wherein the existing risk points are as follows: in the normal stripping process, the friction voltage is measured to exceed 100V, and the product is at risk of static burn;
7. baking (125 ℃ C. 9H): and (3) putting the cut and separated product into an oven for baking, wherein no risk point exists.
The new process of cutting and separating GaN products comprises the following steps:
1. the UV film is pasted (1. The product is fixed in a fixing clamping groove of a film pasting machine; 2. A fixing steel ring; 3. The UV film is pasted);
2. Cutting and separating (1. Putting the product with the UV film attached into cutting equipment; 2. Taking out the edge of the cut frame and continuing production);
3. cleaning: taking out the cut product and putting the product into a cleaning machine;
4. solution UV: taking out the cleaned product, and putting the product into a dispergator to decollate the UV film;
5. picking defective products: picking up the forked product from the side by using a tool, and then clamping off by using tweezers;
6. the method comprises the steps of (1) underwater stripping, namely placing a basket into a water tank, (2) placing the product with the defective products in the basket, separating the product from a UV film by using a scraping blade, (3) taking out the basket, placing the basket into a shelf, airing the product to a state of no dripping, and (4) transferring the product to a place to be cleaned by alcohol after no dripping after the underwater stripping;
7. alcohol cleaning (alcohol replacement every shift) (1. The material staff takes out the product at the place to be cleaned with alcohol and puts it into the frame filled with alcohol for cleaning;
8. baking (125 ℃ C. 9H): and the material staff puts the product in the alcohol cleaned area into an oven for baking.
The new process of cutting and separating GaN products is different from the old process of cutting and separating GaN products in that: the former adjusts the defective product in the latter, and replaces the normal peeling operation.
Example 1:
the embodiment of the invention provides an on-site ESD (electro-static discharge) control method for a GaN product, which is shown in figure 1 and comprises the following steps:
step 1: acquiring a first electrostatic influence on a GaN product generated in a separation process of the GaN product and a UV film based on an old cutting and separating process;
step 2: redesigning the separation environment of the GaN product and the UV film based on the first electrostatic influence, and optimizing the dicing separation old flow;
step 3: and acquiring a second electrostatic influence on the GaN product in the separation process of the GaN product and the UV film based on the new optimized cutting and separating process, and evaluating the ESD field management and control operation based on the second electrostatic influence.
In this example, gaN is a novel semiconductor material for developing microelectronic devices and optoelectronic devices, so GaN products are related products based on the novel semiconductor material.
In this example, ESD is a subject formed in the middle of the 20 th century to study the generation, hazard, and protection of static electricity, and therefore, the equipment for static electricity protection is commonly called ESD in the world, and chinese name is electrostatic resistor.
In this embodiment, redesigning the separation environment refers to converting stripping under an ion fan to stripping under water.
In this embodiment, optimizing the old cutting and separating process refers to adjusting the normal peeling process in the old cutting and separating process to underwater peeling, adjusting relevant operation steps correspondingly, and performing alcohol washing after the underwater peeling.
The beneficial effects of the technical scheme are that: the old cutting and separating process is optimized, static electricity is well neutralized while generated, the influence of the static electricity generated in the cutting and separating process on the GaN product is minimized, and the yield of the GaN product is improved.
Example 2:
based on embodiment 1, an embodiment of the present invention provides a method for controlling ESD on-site on a GaN product, as shown in fig. 2, in step 1, obtaining a first electrostatic influence on the GaN product generated in a process of separating the GaN product from a UV film based on an old process of dicing and separating, includes:
step 1.1: measuring a rubbing voltage generated in a process of separating the GaN product from the UV film based on the old process of cutting and separating;
step 1.2: confirming whether the friction voltage reaches the maximum value of the sustainable friction voltage of the GaN product, if not, judging that the current friction is safe for the GaN product;
If the friction voltage reaches the maximum sustainable friction voltage value, acquiring an exceeding voltage value of the friction voltage based on the maximum sustainable friction voltage value;
step 1.3: and comparing the excess voltage value with an electrostatic influence measurement standard, and determining a first electrostatic influence on the GaN product in the separation process of the GaN product and the UV film based on the old cutting separation process.
In this embodiment, the static impact measurement standard refers to corresponding to the first static impact when the excess voltage value is in the first range; when the exceeding voltage value is in a second range, corresponding to a second electrostatic influence; and when the exceeding voltage value is in a third range, the exceeding voltage value corresponds to a third electrostatic influence, wherein the exceeding voltage value gradually increases from the first range, the second range to the third range, and the first electrostatic influence is smaller than the second electrostatic influence.
The beneficial effects of the technical scheme are as follows: the method is characterized in that the method comprises the steps of judging according to the magnitude of friction voltage, indirectly knowing the magnitude of static electricity generated in the separation process of a GaN product and a UV film, and actually knowing the impact of the static electricity generated in the separation process of the GaN product and the UV film on the basis of the old cutting and separating process according to the obtained static electricity influence, and simultaneously knowing the defects in the old cutting and separating process so as to improve the follow-up process.
Example 3:
based on embodiment 1, an embodiment of the present invention provides a method for controlling ESD on site on a GaN product, as shown in fig. 3, in step 2, redesigning a separation environment of the GaN product and the UV film based on the first electrostatic influence, including:
step 2.1: determining a damage degree of the currently generated static electricity to each GaN product based on the first static electricity influence;
step 2.2: based on the damage degree, counting the damage rate of all the current GaN products;
step 2.3: and when the damage rate reaches a preset damage rate, judging that the GaN product and the UV film are not suitable for being separated in the current separation environment, and redesigning the separation environment of the GaN product and the UV film.
In this embodiment, the damage degree refers to the damage severity of the GaN product, for example: is not serious, generally serious, very serious.
In this example, the damage ratio refers to the ratio between the number of damaged GaN products and the total number of GaN products.
In this embodiment, redesigning the separation environment of the GaN product from the UV film refers to replacing all operational information of the normal lift-off stage in the dicing separation old flow.
The beneficial effects of the technical scheme are as follows: according to the damage rate of the GaN product, the influence on the GaN product caused by the old process based on cutting and separating is known, the problem stage is searched according to the process stage, and the problem stage is adjusted, so that the influence on the GaN product is ensured to be minimized.
Example 4:
based on embodiment 1, the embodiment of the invention provides a method for controlling an ESD field on a GaN product, in step 2, the old process of cutting and separating is optimized, which comprises the following steps:
step 2.4: acquiring risk points existing in each operation step in the old cutting and separating process;
step 2.5: acquiring the layout situation of the risk points in all steps;
step 2.6: determining an abnormality step in which a risk point exists based on the layout condition;
step 2.7: and optimizing the abnormal step according to the severity of the risk points existing in the abnormal step.
In this embodiment, the risk point refers to factors that exist in each operation step and may cause electrostatic influence on the GaN product.
In this embodiment, the layout situation refers to the operation step situation in which the same risk point exists in all the operation steps.
In this embodiment, the severity refers to the degree of electrostatic influence of the risk point corresponding to the abnormal step on the GaN product, for example: are generally severe and very severe.
In this embodiment, optimizing the abnormal step means adjusting the abnormal step until the influence on the GaN product is minimized.
The beneficial effects of the technical scheme are as follows: according to the acquisition of the risk points and the corresponding layout conditions, the defects of each operation step are known, and corresponding adjustment is carried out according to the severity degree of the risk points, so that static electricity is timely neutralized in the stripping process, and the influence on a GaN product is minimized.
Example 5:
based on embodiment 4, the embodiment of the invention provides a method for controlling ESD on a GaN product, in step 2.4, the method for obtaining risk points existing in each operation step in the old cutting and separating process includes:
acquiring state change information of the GaN product based on each operation step in the process of executing the cutting and separating old flow, acquiring a monitoring video of a first operation step corresponding to the first change information in the executing process when the first change information in the state change information meets a preset condition, and determining operation characteristics corresponding to the first operation step based on the monitoring video;
and calling a historical risk record table corresponding to the old cutting and separating process, and comparing the first change information with the operation characteristics in the historical risk record table to determine risk points existing in the first operation step.
In this embodiment, the state change information refers to information corresponding to the transition of the GaN product from one state to another state based on each operation step, for example: transition from a normal state to a damaged state, or from a normal state to a failed state.
In this embodiment, the preset condition refers to that the first change information is information corresponding to a transition from a normal state to an abnormal state, where the abnormal state is a damaged state or a failure state.
In this embodiment, the operation feature refers to an operation behavior feature including: the operation swing amplitude, the operation speed, and the like.
In this embodiment, the history risk record table refers to a record table in which all problems that can be encountered in dicing the GaN product in the old flow and risk points that exist for each operation step are recorded.
The beneficial effects of the technical scheme are as follows: according to analysis of the GaN product and the operation characteristics, risk points in each operation step are determined, a foundation is laid for optimizing the subsequent cutting and separating old process, and the prediction of electrostatic influence on the GaN product is facilitated.
Example 6:
based on embodiment 4, the embodiment of the invention provides a method for controlling ESD on-site on a GaN product, in step 2.7, optimizing the abnormal step according to the severity of the risk point existing in the abnormal step, including:
acquiring a state transition process of the GaN product in the process of executing the abnormal step, and acquiring all abnormal states in the state transition process;
Acquiring the degree of abnormality of each state in all abnormal states and the duration of the corresponding degree of abnormality, and determining the severity of risk points existing in the abnormal step;
and formulating an optimization scheme corresponding to the severity degree, and completing the optimization task of the abnormal step based on the optimization scheme.
In this embodiment, the state transition process refers to a process of transitioning from one state to another, for example: a transition from a normal state to a damaged state or a failed state.
In this embodiment, the abnormal state refers to a damaged state, a failed state, or the like.
In the embodiment, the optimization scheme is to replace a separation environment, manufacture a special fixture and strip based on a new separation environment, wherein the new separation environment is water, and the special fixture comprises: basket, water tank, frame for containing alcohol.
The beneficial effects of the technical scheme are as follows: the corresponding optimization scheme is formulated according to the severity of the risk points, so that the method is accurate and direct, and a brand new environment is created for separating the GaN product from the UV film through the optimization of the abnormal steps, static electricity is well neutralized while the static electricity is generated, and the influence of the static electricity generated by the product in the cutting and separating process on the GaN product is minimized.
Example 7:
based on embodiment 4, the embodiment of the invention provides a method for controlling an ESD field on a GaN product, which comprises the following steps of:
acquiring a first number corresponding to the optimized abnormal steps and a second number corresponding to all the abnormal steps in the old cutting and separating process;
based on the first quantity and the second quantity, preliminarily determining an optimization rate corresponding to the abnormal step;
when the optimization rate is greater than or equal to a preset optimization rate, acquiring step sequences corresponding to all optimized abnormal steps, and monitoring the execution process of all optimized abnormal steps in real time according to the step sequences to acquire behavior characteristic information of each operation action in each optimized abnormal step and first conversion characteristic information between adjacent operation actions;
meanwhile, obtaining second conversion characteristic information of operation actions corresponding to optimized adjacent abnormal steps;
traversing the behavior characteristic information, the first conversion characteristic information and the second conversion characteristic information according to an optimization standard, and determining normalization of operation actions corresponding to the optimized abnormal steps;
Detecting a first static amount and a second static amount generated by separating the GaN product from the UV film under the abnormal steps before and after optimization, and determining a neutralization static amount based on the first static amount and the second static amount;
detecting a first characteristic change parameter of the GaN product in the process of executing an abnormal step before optimization, and acquiring a first change set of the first characteristic change parameter in a preset time;
detecting a second characteristic change parameter of the GaN product in the process of executing the optimized abnormal step, and acquiring a second change set of the second characteristic change parameter in the same preset time;
determining the same parameters in the first characteristic change parameters and the second characteristic change parameters, extracting change sets corresponding to the same parameters based on the first change set and the second change set respectively, and determining corresponding first set differences;
acquiring a difference parameter of the second characteristic change parameter based on the first characteristic change parameter, and extracting a second set difference corresponding to the difference parameter;
determining an adaptability of the GaN product to the optimized abnormal step based on the first set of differences and the second set of differences;
Respectively taking the normalization, the neutralization static quantity and the adaptability as evaluation indexes, evaluating the optimization quality of the abnormal step, and displaying the evaluation result on the mobile terminal;
when the optimization rate is smaller than a preset optimization rate, judging that the current optimization work of the abnormal step is invalid, reformulating an optimization scheme corresponding to the abnormal step, and continuing to optimize the abnormal step based on the optimization scheme.
In this embodiment, the optimization ratio is determined from the ratio between the first number and the second number.
In this embodiment, the behavior feature information refers to the operation magnitude, direction, and the like corresponding when any one of the abnormal steps is performed.
In this embodiment, the first transition feature information refers to direction transition information, operation posture transition information, operation movement amplitude transition information, and the like corresponding to transition from one operation movement to another operation movement when any one of the abnormal steps is performed.
In this embodiment, the second conversion characteristic information refers to swing amplitude transition information, swing direction transition information, and the like of the operation action corresponding to the adjacent abnormal step that has been optimized.
In this embodiment, normalization is determined according to a first difference between behavior feature information of each operation action in each optimized abnormal step and behavior feature information required by an optimization standard, a second difference between first conversion feature information between adjacent operation actions and conversion feature information required by the optimization standard, and a third difference between second conversion feature information of operation actions corresponding to optimized adjacent abnormal steps and conversion feature information required by the optimization standard, and when the first difference, the second difference and the third difference all tend to be 0, it is indicated that normalization of operation actions corresponding to optimized abnormal steps is strong.
In this embodiment, the neutralization electrostatic capacity is determined based on a difference between the second electrostatic capacity and the first electrostatic capacity.
In this embodiment, the first characteristic variation parameter may be breakdown voltage, power, or the like.
In this embodiment, the first change set is configured according to a change curve of each parameter in the first characteristic change parameters within a preset time, where the change curve is configured with each parameter value as an ordinate and time as an abscissa.
In this embodiment, the second characteristic variation parameter may be breakdown voltage, power, actual current, or the like.
In this embodiment, the second variation set is configured according to a variation curve of each of the second characteristic variation parameters within a preset time.
In this embodiment, the first set of differences refers to the difference between the corresponding change curves of the same parameter in the first change set and the corresponding change curves in the second change set, i.e. determined by the magnitude difference of the parameter values corresponding to the same point in time.
In this embodiment, the difference parameter refers to a parameter having more parameters than the second characteristic variation parameter in the first characteristic variation parameter, or a parameter having more parameters than the first characteristic variation parameter in the second characteristic variation parameter.
In this embodiment, the second set of differences is formed according to a variation curve of each difference parameter within a preset time.
In this embodiment, the adaptability is determined according to the change condition of the same parameter in the preset time before and after the optimization, and the change condition of the abnormal parameter in the preset time before and after the optimization, for example: the variation amplitude of the same parameter after optimization is reduced compared with that before optimization, the variation amplitude of the same parameter is controlled to be near the standard amplitude, the variation condition of one parameter is reduced after optimization, the parameter is improved, and at the moment, the adaptability of the GaN product to the abnormal steps after optimization is judged to be very strong.
In this embodiment, the formula for evaluating the optimized quality of the anomaly step is as follows:
wherein B represents an optimized quality assessment value for the abnormal step; τ represents an evaluation coefficient whose value range is (0.12,0.35); θ 1 The weight value of the normative value of the operation action corresponding to the optimized abnormal step in all influencing factors for evaluating the optimization quality is represented; μ represents a normalized value of the operation action corresponding to the optimized exception step; θ 2 Representation neutralizationThe weight value of the static quantity in all influence factors for evaluating the optimization quality; epsilon represents the neutralization electrostatic quantity; θ 3 The weight value of the adaptation value of the GaN product to the optimized abnormal step in all influence factors for evaluating the optimized quality is represented; gamma represents the adaptation value of the GaN product to the abnormal step after optimization, where θ 1 +θ 2 +θ 3 ＝1。
In this embodiment, when τ=0.2, θ 1 ＝0.3，μ＝70，θ 2 ＝0.2，ε＝80，θ 3 When the optimization quality evaluation value corresponding to the optimization standard reaches 50, namely, the optimization is qualified, if the optimization quality evaluation value corresponding to the optimization standard reaches 50, the optimization work of the abnormal step is qualified.
The beneficial effects of the technical scheme are as follows: the optimization rate is preliminarily determined through quantity statistics so as to preliminarily know the optimization condition, the operation process after optimization is monitored, the normalization of the operation action is known, the neutralization condition of static electricity is known through the static electricity quantity condition before and after optimization, the adaptability of a GaN product to an abnormal step after optimization is known according to the change condition of the GaN product parameters before and after optimization, and the evaluation is carried out from the three aspects of operation action, static electricity quantity condition and self parameter change, so that the optimization quality evaluation result is more accurate, correction is carried out in time when the optimization quality is unqualified, and the influence on the GaN product is reduced.
Example 8:
based on embodiment 1, the embodiment of the invention provides a method for controlling an ESD field on a GaN product, in step 3, obtaining a second electrostatic influence on the GaN product in a process of separating the GaN product from the UV film based on a new process of dicing and separating obtained after optimization, which comprises:
Measuring electrostatic voltage generated in the process of separating each GaN product from a corresponding UV film in all GaN products under the new cutting and separating process;
acquiring corresponding performance characteristics and morphological characteristics of each GaN product based on the electrostatic voltage;
acquiring a first influence of the morphological feature on the performance feature, and simultaneously acquiring a second influence of the morphological feature on each GaN product;
the importance of the performance characteristics and the morphological characteristics on each GaN product is respectively obtained, and the importance is used as a first influence weight value and a second influence weight value;
acquiring a third influence weight value of the morphological feature on the performance feature;
and determining a second electrostatic influence on the GaN product in the separation process of the GaN product and the UV film under the new cutting and separating process based on the first influence, the first influence weight value, the third influence weight value, the second influence and the second influence weight value.
In this example, the performance characteristics refer to the performance of each GaN product based on the electrostatic voltage.
In this example, the morphological feature refers to the degree of deformation of each GaN product based on the electrostatic voltage.
In this embodiment, determining the second electrostatic influence on the GaN product in the process of separating the GaN product from the UV film based on the new process of dicing separation refers to obtaining a first product result by multiplying the first influence by a first influence weight value and multiplying the second influence by a third influence weight value, obtaining a second product result by multiplying the second influence by the second influence weight value, and summing the first product result and the second product result.
The beneficial effects of the technical scheme are as follows: from the two aspects of performance and morphology, the electrostatic influence brought to the GaN product is determined, so that more accurate electrostatic influence can be obtained conveniently, and the improvement effect of a new cutting and separating process on the electrostatic influence is further measured.
Example 9:
based on embodiment 1, the embodiment of the invention provides a method for controlling an ESD field on a GaN product, in step 3, based on the second electrostatic influence, an ESD field control operation is evaluated, which includes:
acquiring a target influence object corresponding to the second electrostatic influence and the influence degree corresponding to each target influence object;
judging whether the influence degree reaches a preset influence degree, if so, acquiring all the evaluable indexes of the target influence object based on the GaN product and the evaluation scores corresponding to all the evaluable indexes, determining the comprehensive evaluation score of the target influence object based on the weight value of each evaluable index in all the evaluation indexes and the corresponding evaluation score, and determining the importance of the target influence object to the GaN product based on the comprehensive evaluation score;
The monitoring video corresponding to the GaN product and the UV film in the separation process based on the new cutting and separating process is called, and meanwhile, a verification model matched with a separation environment corresponding to the new cutting and separating process is obtained;
the importance is subjected to first priority ranking, a first verification sequence of the target influence objects is preliminarily determined based on a first priority ranking result, when the situation that the ranking numbers of a plurality of target influence objects are the same exists, linear interval distances between the plurality of target influence objects and initial positions of the verification model are respectively obtained, and second priority ranking is performed according to the linear interval distance;
when the situation that the linear interval distances are the same exists, the corresponding linear interval distance is taken as a radius, the initial position is taken as a central position, a track to be verified is constructed, a preset position on the track to be verified is taken as an initial position, all target influence objects on the track to be verified are determined along the clockwise direction based on the initial position, and third priority ranking is carried out on all target influence objects;
updating the first verification sequence based on the second priority ordering result and the third priority ordering result to obtain a second verification sequence;
In the monitoring video, controlling the verification model to verify each operation step of each target influence object in all target influence objects in the new cutting and separating process according to a second verification sequence, and taking a verification result as a first evaluation index;
acquiring an actual static amount in a process of separating the GaN product from the UV film based on the new cutting and separating process, determining safety corresponding to the actual static amount, and taking the safety as a second evaluation index;
detecting abnormal times of the GaN product in the working process after cutting and separating treatment, and taking the abnormal times as a third evaluation index;
and determining an evaluation result of the ESD field management operation based on the first evaluation index, the second evaluation index, the third evaluation index and the corresponding weight value.
In this embodiment, the target influence object refers to a part of the GaN product that is subjected to the second electrostatic influence.
In this embodiment, the influence degree refers to a primary influence, a secondary influence or a tertiary influence caused by static electricity generated in the separation process of the GaN product and the UV film in the new process of dicing separation.
In this example, all the evaluable indicators refer to performance, morphology, etc.
In this embodiment, the formula for determining the comprehensive evaluation score a of the target influence object is as follows:
wherein n represents the total number of the target influence objects present on the GaN product; m represents the total number of the target influence objects based on the evaluable index of the GaN product;
a weight value corresponding to the j-th evaluable index in the i-th target influence object is represented; />
The evaluation score corresponding to the j-th evaluable index in the i-th target influence object is represented.
In this embodiment, determining the importance of the target influence object to the GaN product based on the comprehensive evaluation score means that the target influence object is indicated to be important to the GaN product when the comprehensive evaluation score reaches a preset score, and that the target influence object is indicated to be insignificant to the GaN product when the comprehensive evaluation score does not reach the preset score.
In this embodiment, the first prioritization refers to a ranking according to the order of importance from high to low.
In this embodiment, the second priority ranking refers to ranking the plurality of target influence objects in order of decreasing linear separation distance.
In this embodiment, the third priority ranking refers to ranking existing target influencing objects in a clockwise direction with a starting position as a starting point on the track to be verified according to the appearance sequence.
In this embodiment, updating the first verification sequence to obtain the second verification sequence refers to performing a first adjustment on the first verification sequence based on the second prioritized result, and performing a second adjustment on the first adjustment result based on the third prioritized result, for example: the first verification sequence is: the first position is 1, the second position is 2, the third position is 3, the fourth position is 4, the fifth position is 4, the sixth position is 4, the seventh position is 4, the eighth position is 5, the ninth position is 6, 1,2,3,4,4,4,4,5,6 is formed, and the linear interval distance between the fourth position to the seventh position and the initial position of the verification model is ordered as follows: the seventh position is the largest, the fourth position is the same as the sixth position, and the second largest, the fifth position is the smallest, the original fourth position is adjusted to the seventh position according to the sorting, the fourth position and the sixth position are placed in the middle position for adjusting the seventh position to the forefront, and the fifth position is placed at the last; according to the instantaneous needle direction, the sixth position is in front of the fourth position, then the final sequence is: the first position is 1, the second position is 2, the third position is 3, the seventh position is 4, the sixth position is 5, the fourth position is 6, the fifth position is 7, the eighth position is 8, and the ninth position is 9, finally forming: 1,2,3,4,5,6,7,8,9.
In this embodiment, the verification result refers to whether the operation behavior corresponding to each operation step is correct.
In this embodiment, the safety is judged according to whether the actual electrostatic capacity reaches an electrostatic capacity threshold value which threatens the safety of the GaN product itself, and when the actual electrostatic capacity reaches the threshold value, the GaN product is unsafe, otherwise, the GaN product is safe.
In this embodiment, determining the evaluation result of the ESD field management and control operation refers to multiplying the first evaluation index by the corresponding first weight value to obtain a first product result, multiplying the second evaluation index by the corresponding second weight value to obtain a second product result, multiplying the third evaluation index by the corresponding third weight value to obtain a third product result, and adding the first product result, the second product result and the third product result.
The beneficial effects of the technical scheme are as follows: the importance is determined according to the comprehensive evaluation score, the accuracy is improved, the occurrence of disordered verification sequence in the verification process is avoided through three times of sequencing, the verification progress is delayed, time is wasted, the ESD management and control operation quality is evaluated from the three aspects of the execution quality of the operation steps, the generated static electricity condition and the later working state, the accurate evaluation result is further ensured, and the evaluation error is effectively reduced.
Example 10:
based on embodiment 1, the embodiment of the invention provides an ESD field control method on a GaN product, which further comprises, after evaluating the ESD field control operation: when the evaluation result of the ESD field management and control operation is unqualified, confirming whether the impact degree of static electricity generated in the separation process of the GaN product and the UV film on the GaN product reaches a preset degree or not under the new cutting and separation process, if so, detecting the impact reason corresponding to the impact degree, and reminding to carry out corresponding correction processing based on the detected impact reason.
In this example, the impact degree refers to the degree of electrostatic influence of generated static electricity on the GaN product.
In this embodiment, the impact may be caused by a malfunction of an operation step, an insufficient amount of alcohol used for alcohol washing, or the like.
In this embodiment, the correction process refers to adjustment of an erroneous operation procedure, strict control of the used tool, and re-operation after adjustment.
The beneficial effects of the technical scheme are as follows: after the evaluation result is determined to be unqualified, the impact degree is judged, whether the impact degree is influenced on the GaN product is determined by double conditions, and the corresponding reasons are further accurately detected, so that the accurate corresponding correction is performed, unnecessary correction is reduced, and the yield of the GaN product in mass production is improved.
Example 11:
based on embodiment 10, the embodiment of the invention provides an ESD field control method on a GaN product, which further includes, after reminding to perform corresponding correction processing based on the detected impact cause: detecting the correction efficiency, comprising:
detecting all positions of the generated static electricity which causes electrostatic impact influence on the GaN product, and acquiring the impact degree corresponding to each impact influence position;
based on the detection result and the following formula, calculating the correction efficiency eta of the impact influence position on the GaN product:
wherein omega 1 Representing a correction factor whose value range is (0.88,0.95); omega 2 Representing an error factor, the range of values of which is (0.01,0.10); n (N) 1 Representing the number of error correction locations present in all impact affected locations on the GaN product; n (N) 2 Representing the number of correct correction positions present in all impact affected positions on the GaN product; n (N) 3 Representing the number of uncorrectable locations present in all error correction locations; n (N) 4 Representing the number of uncorrectable locations other than the uncorrectable locations present in all the error correction locations; n (N) 5 Representing the total number of impact affected sites present on the GaN product; c represents all impact shadows on the GaN product The number of classes of impact degrees corresponding to the sound positions; t is t k1 The actual time for correcting the impact position corresponding to the kth impact degree is shown; t is t k2 The ideal time for correcting the impact position corresponding to the kth impact degree is shown;
judging whether the correction efficiency reaches a preset correction efficiency or not, and if so, judging that the correction work on the impact influence position on the GaN product is qualified;
if the impact position is not reached, the impact position of the error correction is corrected again according to a correct correction method.
In this embodiment, when ω 1 ＝0.9，ω 2 ＝0.05，N 1 ＝15，N 2 ＝20，N 3 ＝5，N 4 ＝8，N 5 ＝100，c＝4，
When η=0.19, if the preset correction efficiency is 0.5, it is obvious that 0.19 does not reach 0.5, and the impact position of the error correction is corrected again according to the correct correction method.
The beneficial effects of the technical scheme are as follows: the correction efficiency of the impact affected position is detected, timely knowing of the correction condition is ensured, when a problem occurs, the correction is performed again in time, the electrostatic impact effect caused by a GaN product is reduced, the calculation error is reduced by considering the four aspects of the number of error correction positions, the number of correct correction positions, the number of uncorrectable positions and the correction time, in addition, the detection and calculation of the correction efficiency are performed, and the improvement speed of the yield of the GaN product in mass production is accelerated.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (9)
1. An ESD field management and control method on a GaN product, comprising:
step 1: acquiring a first electrostatic influence on a GaN product generated in a separation process of the GaN product and a UV film based on an old cutting and separating process;
step 2: redesigning the separation environment of the GaN product and the UV film based on the first electrostatic influence, and optimizing the dicing separation old flow;
step 3: acquiring a second electrostatic influence on the GaN product in the separation process of the GaN product and the UV film based on the new optimized cutting and separating process, and evaluating ESD field management and control operation based on the second electrostatic influence;
in step 3, based on the second electrostatic influence, an ESD field management and control operation is evaluated, including:
acquiring a target influence object corresponding to the second electrostatic influence and the influence degree corresponding to each target influence object;
Judging whether the influence degree reaches a preset influence degree, if so, acquiring all the evaluable indexes of the target influence object based on the GaN product and the evaluation scores corresponding to all the evaluable indexes, determining the comprehensive evaluation score of the target influence object based on the weight value of each evaluable index in all the evaluation indexes and the corresponding evaluation score, and determining the importance of the target influence object to the GaN product based on the comprehensive evaluation score;
the monitoring video corresponding to the GaN product and the UV film in the separation process based on the new cutting and separating process is called, and meanwhile, a verification model matched with a separation environment corresponding to the new cutting and separating process is obtained;
the importance is subjected to first priority ranking, a first verification sequence of the target influence objects is preliminarily determined based on a first priority ranking result, when the situation that the ranking numbers of a plurality of target influence objects are the same exists, linear interval distances between the plurality of target influence objects and initial positions of the verification model are respectively obtained, and second priority ranking is performed according to the linear interval distance;
When the situation that the linear interval distances are the same exists, the corresponding linear interval distance is taken as a radius, the initial position is taken as a central position, a track to be verified is constructed, a preset position on the track to be verified is taken as an initial position, all target influence objects on the track to be verified are determined along the clockwise direction based on the initial position, and third priority ranking is carried out on all target influence objects;
updating the first verification sequence based on the second priority ordering result and the third priority ordering result to obtain a second verification sequence;
in the monitoring video, controlling the verification model to verify each operation step of each target influence object in all target influence objects in the new cutting and separating process according to a second verification sequence, and taking a verification result as a first evaluation index;
acquiring an actual static amount in a process of separating the GaN product from the UV film based on the new cutting and separating process, determining safety corresponding to the actual static amount, and taking the safety as a second evaluation index;
detecting abnormal times of the GaN product in the working process after cutting and separating treatment, and taking the abnormal times as a third evaluation index;
Determining an evaluation result of the ESD field management and control operation based on the first evaluation index, the second evaluation index, the third evaluation index and the respective corresponding weight values;
wherein, the new design separation environment is to change the stripping under the ion fan into the underwater stripping;
optimizing the old cutting and separating process refers to adjusting the normal stripping process in the old cutting and separating process into underwater stripping, correspondingly adjusting related operation steps, and cleaning with alcohol after the underwater stripping;
the target influencing object refers to a part of the GaN product that is subject to the second electrostatic influence.
2. The method for controlling ESD on-site on a GaN product according to claim 1, wherein in step 1, obtaining a first electrostatic influence on the GaN product during separation of the GaN product from the UV film based on a dicing separation old flow comprises:
step 1.1: measuring a rubbing voltage generated in a process of separating the GaN product from the UV film based on the old process of cutting and separating;
step 1.2: confirming whether the friction voltage reaches the maximum value of the sustainable friction voltage of the GaN product, if not, judging that the current friction is safe for the GaN product;
If the friction voltage reaches the maximum sustainable friction voltage value, acquiring an exceeding voltage value of the friction voltage based on the maximum sustainable friction voltage value;
step 1.3: and comparing the excess voltage value with an electrostatic influence measurement standard, and determining a first electrostatic influence on the GaN product in the separation process of the GaN product and the UV film based on the old cutting separation process.
3. The method of on-site ESD management on a GaN product according to claim 1, wherein in step 2, redesigning the separation environment of the GaN product from the UV film based on the first electrostatic influence comprises:
step 2.1: determining a damage degree of the currently generated static electricity to each GaN product based on the first static electricity influence;
step 2.2: based on the damage degree, counting the damage rate of all the current GaN products;
step 2.3: and when the damage rate reaches a preset damage rate, judging that the GaN product and the UV film are not suitable for being separated in the current separation environment, and redesigning the separation environment of the GaN product and the UV film.
4. The method for controlling ESD on-site on a GaN product according to claim 1, wherein in step 2, optimizing the dicing separation old process comprises:
Step 2.4: acquiring risk points existing in each operation step in the old cutting and separating process;
step 2.5: acquiring the layout situation of the risk points in all steps;
step 2.6: determining an abnormality step in which a risk point exists based on the layout condition;
step 2.7: and optimizing the abnormal step according to the severity of the risk points existing in the abnormal step.
5. The method for controlling ESD on-site on a GaN product according to claim 4, wherein in step 2.4, obtaining risk points existing in each operation step of the dicing separation old flow comprises:
acquiring state change information of the GaN product based on each operation step in the process of executing the cutting and separating old flow, acquiring a monitoring video of a first operation step corresponding to the first change information in the executing process when the first change information in the state change information meets a preset condition, and determining operation characteristics corresponding to the first operation step based on the monitoring video;
and calling a historical risk record table corresponding to the old cutting and separating process, and comparing the first change information with the operation characteristics in the historical risk record table to determine risk points existing in the first operation step.
6. The method of on-site ESD management of a GaN product according to claim 4, wherein in step 2.7, optimizing the abnormal step according to the severity of the risk points at which the abnormal step exists comprises:
acquiring a state transition process of the GaN product in the process of executing the abnormal step, and acquiring all abnormal states in the state transition process;
acquiring the degree of abnormality of each state in all abnormal states and the duration of the corresponding degree of abnormality, and determining the severity of risk points existing in the abnormal step;
and formulating an optimization scheme corresponding to the severity degree, and completing the optimization task of the abnormal step based on the optimization scheme.
7. The method of on-site ESD management on a GaN product of claim 4, wherein after optimizing said anomaly step, evaluating an optimization quality comprises:
acquiring a first number corresponding to the optimized abnormal steps and a second number corresponding to all the abnormal steps in the old cutting and separating process;
based on the first quantity and the second quantity, preliminarily determining an optimization rate corresponding to the abnormal step;
When the optimization rate is greater than or equal to a preset optimization rate, acquiring step sequences corresponding to all optimized abnormal steps, and monitoring the execution process of all optimized abnormal steps in real time according to the step sequences to acquire behavior characteristic information of each operation action in each optimized abnormal step and first conversion characteristic information between adjacent operation actions;
meanwhile, obtaining second conversion characteristic information of operation actions corresponding to optimized adjacent abnormal steps;
traversing the behavior characteristic information, the first conversion characteristic information and the second conversion characteristic information according to an optimization standard, and determining normalization of operation actions corresponding to the optimized abnormal steps;
detecting a first static amount and a second static amount generated by separating the GaN product from the UV film under the abnormal steps before and after optimization, and determining a neutralization static amount based on the first static amount and the second static amount;
detecting a first characteristic change parameter of the GaN product in the process of executing an abnormal step before optimization, and acquiring a first change set of the first characteristic change parameter in a preset time;
detecting a second characteristic change parameter of the GaN product in the process of executing the optimized abnormal step, and acquiring a second change set of the second characteristic change parameter in the same preset time;
Determining the same parameters in the first characteristic change parameters and the second characteristic change parameters, extracting change sets corresponding to the same parameters based on the first change set and the second change set respectively, and determining corresponding first set differences;
acquiring a difference parameter of the second characteristic change parameter based on the first characteristic change parameter, and extracting a second set difference corresponding to the difference parameter;
determining an adaptability of the GaN product to the optimized abnormal step based on the first set of differences and the second set of differences;
respectively taking the normalization, the neutralization static quantity and the adaptability as evaluation indexes, evaluating the optimization quality of the abnormal step, and displaying the evaluation result on the mobile terminal;
when the optimization rate is smaller than a preset optimization rate, judging that the current optimization work of the abnormal step is invalid, reformulating an optimization scheme corresponding to the abnormal step, and continuing to optimize the abnormal step based on the optimization scheme.
8. The method for controlling ESD on-site on a GaN product according to claim 1, wherein in step 3, obtaining a second electrostatic influence on the GaN product during separation of the GaN product from the UV film based on a new process of dicing separation obtained after optimization comprises:
Measuring electrostatic voltage generated in the process of separating each GaN product from a corresponding UV film in all GaN products under the new cutting and separating process;
acquiring corresponding performance characteristics and morphological characteristics of each GaN product based on the electrostatic voltage;
acquiring a first influence of the morphological feature on the performance feature, and simultaneously acquiring a second influence of the morphological feature on each GaN product;
the importance of the performance characteristics and the morphological characteristics on each GaN product is respectively obtained, and the importance is used as a first influence weight value and a second influence weight value;
acquiring a third influence weight value of the morphological feature on the performance feature;
and determining a second electrostatic influence on the GaN product in the separation process of the GaN product and the UV film under the new cutting and separating process based on the first influence, the first influence weight value, the third influence weight value, the second influence and the second influence weight value.
9. The method of on-GaN product ESD field management as defined in claim 1, further comprising, after evaluating the ESD field management operation: when the evaluation result of the ESD field management and control operation is unqualified, confirming whether the impact degree of static electricity generated in the separation process of the GaN product and the UV film on the GaN product reaches a preset degree or not under the new cutting and separation process, if so, detecting the impact reason corresponding to the impact degree, and reminding to carry out corresponding correction processing based on the detected impact reason.
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