CN114416446A - Memory parameter adaptation method and device, terminal equipment and storage medium - Google Patents
Memory parameter adaptation method and device, terminal equipment and storage medium Download PDFInfo
- Publication number
- CN114416446A CN114416446A CN202111653051.0A CN202111653051A CN114416446A CN 114416446 A CN114416446 A CN 114416446A CN 202111653051 A CN202111653051 A CN 202111653051A CN 114416446 A CN114416446 A CN 114416446A
- Authority
- CN
- China
- Prior art keywords
- memory
- parameter
- values
- groups
- parameter values
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
- G06F11/2273—Test methods
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/22—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing
- G06F11/2205—Detection or location of defective computer hardware by testing during standby operation or during idle time, e.g. start-up testing using arrangements specific to the hardware being tested
Abstract
The application provides a memory parameter adaptation method, a device, a terminal device and a storage medium, wherein the memory parameter adaptation method comprises the following steps: obtaining M groups of first parameter values of N memory parameters, wherein each group of first parameter values is a value combination of N memory parameters, M is an integer larger than 1, and N is an integer larger than zero; respectively carrying out first pressure tests on the memories in the equipment to be tested based on the M groups of first parameter values; if the number of groups of second parameter values in which the first pressure test is successful in the M groups of first parameter values is greater than H, determining N candidate values of the memory parameters from all values of the N memory parameters in all groups of second parameter values; combining the N candidate values of the memory parameters to obtain a third parameter value; and determining a target parameter value from the third parameter values of all groups. The adaptation efficiency of the memory parameters can be improved through the method and the device.
Description
Technical Field
The present application belongs to the field of embedded technology, and in particular, to a method and an apparatus for adapting memory parameters, a terminal device, and a storage medium.
Background
The embedded device has limited memory for storage and operation, different types of memory, and different initialization parameters of the memory according to different specific hardware. When a new product developer designs a Printed Circuit Board (PCB) of an embedded device and performs memory selection, it is critical how to select memory parameters because actual design and reference design usually come in and go out. In the prior art, a chip manufacturer provides guidance, a developer adjusts certain parameters to test according to experience, the requirement on the experience of the developer is high, time consumption is long, and adaptation efficiency is low.
Disclosure of Invention
The embodiment of the application provides a memory parameter adaptation method, a memory parameter adaptation device, terminal equipment and a storage medium, so as to improve the adaptation efficiency of memory parameters.
In a first aspect, an embodiment of the present application provides a memory parameter adaptation method, where the memory parameter adaptation method includes:
obtaining M groups of first parameter values of N memory parameters, wherein each group of first parameter values is a value combination of N memory parameters, M is an integer larger than 1, and N is an integer larger than zero;
respectively carrying out first pressure tests on the memories in the equipment to be tested based on the M groups of first parameter values;
if the number of groups of second parameter values in which the first pressure test is successful in M groups of first parameter values is greater than H, determining N candidate values of the memory parameters from all values of the N memory parameters in all groups of second parameter values, wherein one candidate value of the memory parameter refers to a value of which the occurrence frequency of the memory parameter in all groups of second parameter values exceeds a frequency threshold, and H is an integer greater than 1 and less than M;
combining the N candidate values of the memory parameters to obtain a third parameter value;
and determining a target parameter value from the third parameter values of all the groups, wherein the target parameter value is the value of N memory parameters which enable the stability of the memory to reach the preset requirement.
In a second aspect, an embodiment of the present application provides a memory parameter adapting device, where the memory parameter adapting device includes:
a first obtaining module, configured to obtain M groups of first parameter values of N memory parameters, where each group of the first parameter values is a value combination of the N memory parameters, M is an integer greater than 1, and N is an integer greater than zero;
the first testing module is used for respectively carrying out first pressure testing on the memory in the equipment to be tested based on the M groups of first parameter values;
a first determining module, configured to determine, if a group number of second parameter values, in the M groups of first parameter values, for which the first pressure test is successful is greater than H, N candidate values of the memory parameter from all values of the N memory parameters in all groups of the second parameter values, where a candidate value of a memory parameter is a value in which an occurrence frequency of the memory parameter in the second parameter values of all groups exceeds a frequency threshold, and H is an integer greater than 1 and less than M;
the value combination module is used for combining the candidate values of the N memory parameters to obtain a third parameter value;
and the second determining module is used for determining a target parameter value from the third parameter values of all the groups, wherein the target parameter value is the value of N memory parameters which enable the stability of the memory to meet the preset requirement.
In a third aspect, an embodiment of the present application provides a terminal device, which includes a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor implements the steps of the memory parameter adapting method according to the first aspect when executing the computer program.
In a fourth aspect, the present application provides a computer-readable storage medium, where a computer program is stored, and when executed by a processor, the computer program implements the steps of the memory parameter adapting method according to the first aspect.
In a fifth aspect, an embodiment of the present application provides a computer program product, which when running on a terminal device, causes the terminal device to execute the steps of the memory parameter adaptation method according to the first aspect.
As can be seen from the above, according to the present application, by obtaining M groups of first parameter values of N memory parameters, and performing a first pressure test on the memory in the device to be tested based on the M groups of first parameter values, if the number of groups of second parameter values for which the first pressure test is successful is greater than H, a value with a higher occurrence frequency can be used as a candidate value of the memory parameter based on the occurrence frequency of the value of each memory parameter in all groups of second parameter values, and on this basis, the candidate values of the N memory parameters are combined to obtain a third parameter value with a number of groups smaller than the second parameter value, so that compared with the first parameter value and the second parameter value, a target parameter value is determined from the third parameter values of all groups, and the search range of the value of each memory parameter can be narrowed, thereby improving the adaptation efficiency of the memory parameter.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic flow chart illustrating an implementation of a memory parameter adaptation method according to an embodiment of the present application;
FIG. 2 is a flow chart of initialization of a DDR;
FIG. 3 is a flowchart illustrating an exemplary process of initializing and first pressure testing;
fig. 4 is a schematic flow chart illustrating an implementation of the memory parameter adaptation method according to the second embodiment of the present application;
FIG. 5 is an exemplary diagram of a memory parameter search process;
fig. 6 is a schematic structural diagram of a memory parameter adaptation apparatus according to a third embodiment of the present application;
fig. 7 is a schematic structural diagram of a terminal device according to a fourth embodiment of the present application.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It is also to be understood that the terminology used in the description of the present application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the specification of the present application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
Reference throughout this specification to "one embodiment" or "some embodiments," or the like, means that a particular feature, structure, or characteristic described in connection with the embodiment is included in one or more embodiments of the present application. Thus, appearances of the phrases "in one embodiment," "in some embodiments," "in other embodiments," or the like, in various places throughout this specification are not necessarily all referring to the same embodiment, but rather "one or more but not all embodiments" unless specifically stated otherwise. The terms "comprising," "including," "having," and variations thereof mean "including, but not limited to," unless expressly specified otherwise.
For convenience of understanding, the present embodiment is described by taking a Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM) as an example, but this does not constitute a limitation to the Memory in the device to be tested. Herein, DDR SDRAM may also be referred to as DDR for short.
It should be understood that, the sequence numbers of the steps in this embodiment do not mean the execution sequence, and the execution sequence of each process should be determined by the function and the inherent logic of the process, and should not constitute any limitation to the implementation process of the embodiment of the present application.
In order to explain the technical solution described in the present application, the following description will be given by way of specific examples.
Fig. 1 is a schematic view of an implementation flow of a memory parameter adaptation method provided in an embodiment of the present application, where the memory parameter adaptation method is applied to a terminal device. As shown in fig. 1, the memory parameter adapting method may include the following steps:
The N memory parameters are N parameters of a memory in the device under test. The memory in the device under test can be understood as the memory which needs to be adapted or configured with parameters. Each group of first parameter values is a value combination of N memory parameters, M is an integer greater than 1, and N is an integer greater than zero.
The N memory parameters include, but are not limited to, the type of memory, frequency, physical parameters of the control/read/write channel, custom register assignments, etc. Taking DDR as an example, the type of the memory may be at least one type of DDR, such as DDR3, DDR4, DDR3L, LPDDR3, and the like. Physical parameters of the control channel of the memory include, but are not limited to, address signal drive strength, clock signal drive strength, and the like. Physical parameters of a read channel of the Memory include, but are not limited to, Dynamic Random Access Memory (DRAM) output driving strength, DDR physical interface data signal on-chip termination impedance, and the like. Physical parameters of a write channel of the memory include, but are not limited to, DDR physical interface data signal drive strength, DRAM data bus on-chip termination impedance, and the like. The custom register assignments of the memory may be used to adjust some other parameter, such as a user-defined parameter.
Each memory parameter has at least one value. For example, for the DDR type, four values of DDR3, DDR4, DDR3L, LPDDR3, and the like may be taken.
The M sets of first parameter values are M combinations of values of the N memory parameters.
As an optional embodiment, the obtaining M groups of first parameter values of the N memory parameters includes:
obtaining S groups of initial parameter values of N memory parameters, wherein each group of initial parameter values is a value combination of the N memory parameters, and S is an integer greater than or equal to M;
initializing the memories respectively based on the S groups of initial parameter values;
and determining the initial parameter value which is initialized successfully as a first parameter value.
Fig. 2 is a flowchart of DDR initialization, which mainly includes DDR Phase Locked Loop (PLL) configuration, DDR controller initialization, DDR physical interface initialization, and DDR training.
By initializing the memory, the S groups of initial parameter values can be preliminarily screened to screen initial parameter values failed in initialization, and initial parameter values successful in initialization are reserved, so that the search range of the values of each memory parameter can be reduced, and the adaptation efficiency of the memory parameters is improved.
In an example, all values of each memory parameter may be obtained first, and all values of N memory parameters are combined to obtain S sets of initial parameter values, where S is a total combined number of all values of N memory parameters. For example, taking four memory parameters of the N memory parameters as an example, for convenience of description, the four memory parameters may be respectively referred to as a first memory parameter, a second memory parameter, a third memory parameter and a fourth memory parameter, where the first memory parameter has six values, the second memory parameter has four values, the third memory parameter has four values, and the fourth memory parameter has one value, so that the four memory parameters may form a value combination of ninety-six (i.e., a product of the values of the four memory parameters), namely ninety-six groups of initial parameter values can be obtained, the memory is respectively initialized based on the ninety-six groups of initial parameter values, forty-eight groups of initial parameter values are determined to successfully initialize the memory, then M can be determined to be forty-eight, namely, the forty-eight initial parameter values which are successfully initialized are forty-eight first parameter values.
And 102, respectively carrying out first pressure test on the memory in the equipment to be tested based on the M groups of first parameter values.
The first pressure test is used for testing the stability of the memory. The test case of the first pressure test is not limited, for example, the first pressure test may be a high bandwidth case, a high power consumption case, a multi-module case, or the like. The high bandwidth use case is used for testing the stability of continuous high-speed reading and writing. The high power consumption case is used for testing the stability of the device to be tested under the condition of high load. The multi-module case refers to a case where a plurality of hardware modules in a device to be tested work simultaneously to read and write a Memory, such as a Central Processing Unit (CPU), a Direct Memory Access (DMA) module, a Digital Signal Processor (DSP), a video coding and decoding module, and the like. The multi-module case is used for testing the stability of the complex service during operation.
Taking the ith group of first parameter values as an example, the ith group of first parameter values is any one of the M groups of first parameter values, and i is an integer greater than zero and less than or equal to M. Performing a first pressure test on the memory in the device to be tested based on the ith group of first parameter values may refer to: the method comprises the steps of firstly setting values of N memory parameters of a memory in the device to be tested as corresponding values in the ith group of first parameter values respectively, and then carrying out first pressure test on the memory with the set values of the N memory parameters. For example, the ith group of first parameter values is (a1, b1, c2, d), a1 is a value of a first memory parameter, b1 is a value of a second memory parameter, c2 is a value of a third memory parameter, and d is a value of a fourth memory parameter, the first memory parameter, the second memory parameter, the third memory parameter, and the fourth memory parameter of the memory in the device under test are set to be a1, b1, c2, and d, respectively, and then the memory with the values of the four memory parameters set is subjected to a first pressure test.
In an embodiment, if the number of groups of second parameter values successfully tested for the first pressure of the memory in the M groups of first parameter values is less than or equal to H, it indicates that the searchable range of the N memory parameters is small, and a value that can achieve better stability of the memory may not be searched.
An exemplary flow chart for initialization and first pressure testing is shown in fig. 3. In fig. 3, the terminal device may input a search configuration to the device to be tested through the serial port, where the search configuration includes, but is not limited to, S groups of initial parameter values, the number of restart times of each group of parameter values, single test time, test cases, the maximum number of rounds (i.e., S), whether to skip failed parameters, whether to restart immediately after failure, whether to automatically increase single test time according to the change of the number of each wheel group, and the like; after the search configuration is input, DDR initialization can be performed based on the current set of initial parameter values, and whether the initialization is successful or not is judged; restarting the equipment to be tested if the initialization fails; if the initialization is successful, judging whether only test initialization is carried out, if only test initialization is carried out, restarting the equipment to be tested, if a first pressure test is required, carrying out the first pressure test, judging whether the first pressure test is successful, if the first pressure test is successful, marking the current initial parameter values (namely the second parameter values) which are successfully initialized and successfully tested as the success, and restarting the equipment to be tested (which can be restarted for multiple times to ensure the stability of the first parameter values); and after the device to be tested is restarted, judging whether the maximum round number is reached, if not, judging whether to change the next group of initial parameter values, if so, returning to the step of executing DDR initialization and the subsequent steps based on the next group of initial parameter values until the maximum round number is reached.
And the second parameter value is the first parameter value which is successfully tested by the first pressure.
A candidate value of a memory parameter is a value of the memory parameter whose frequency of occurrence exceeds a frequency threshold in at least two sets of second parameter values. Optionally, a frequency threshold may be preset for each memory parameter. For example, the frequency threshold is
The first memory parameter has six values, the six values are respectively (a1, a2, a3, a4, a5 and a6), the values of the first memory parameter in the forty-eight groups of first parameter values are respectively (a1, a4, a5 and a6), and the frequency of occurrence of the a1 in the forty-eight groups of first parameter values is
a4 has an occurrence frequency of forty-eight sets of values of the first parameter
a5 has an occurrence frequency of forty-eight sets of values of the first parameter
a6 has an occurrence frequency of forty-eight sets of values of the first parameter
According to a frequency threshold
The candidate values of the first memory parameter may be screened as (a4, a5, a 6).
And 104, combining the candidate values of the N memory parameters to obtain a third parameter value.
The candidate values of the N memory parameters are combined to obtain the third parameter values with the group number smaller than that of the second parameter values, so that the target parameter values are selected from the third parameter values of all the groups, and the adaptation efficiency of the memory parameters can be improved.
Illustratively, the candidate values of the first memory parameter are (a4, a5, a6), the candidate values of the second memory parameter are (b1, b2, b3), the candidate values of the third memory parameter are (c2, c3), and the candidate values of the fourth memory parameter are d. Eighteen groups of third parameter values can be obtained by combining the candidate values of the four memory parameters, and compared with forty-eight groups of first parameter values, the search range is reduced to eighteen groups, and the adaptation efficiency of the memory parameters is improved.
And 105, determining a target parameter value from the third parameter values of all the groups.
The target parameter value is a value of N memory parameters which enable the stability of the memory to meet the preset requirement.
For example, in the eighteen groups of third parameter values, (a4, b2, c3, d) may be determined as the target parameter value if (a4, b2, c3, d) enables the stability of the memory to meet the preset requirement.
It should be noted that the number of groups of values of the target parameter may be one group, or may be at least two groups. When the number of groups of target parameter values is at least two, at least two groups of target parameter values can be displayed, and when the selection operation of any one group of target parameter values in the at least two groups of target parameter values is received, N values in the selected target parameter values are determined to be the final values of the N memory parameters, namely the final values of the N memory parameters are determined according to the selection of a user; or, for each memory parameter, the median of all values of the memory parameter in at least two sets of target parameter values may be used as the final value of the memory parameter. When there are multiple values of a memory parameter, the median is not affected by a large or small value, and can represent the general level of all values, so that it is more appropriate to select the median of all values as the final value.
According to the embodiment of the application, M groups of first parameter values of N memory parameters are obtained, the memory in the equipment to be tested is subjected to a first pressure test based on the M groups of first parameter values, if the group number of second parameter values successful in the first pressure test is larger than H, the values with higher occurrence frequency can be used as candidate values of the memory parameters based on the occurrence frequency of the values of each memory parameter in all the groups of second parameter values, and on the basis, the candidate values of the N memory parameters are combined to obtain a third parameter value with the group number smaller than that of the second parameter values.
Fig. 4 is a schematic view of an implementation flow of the memory parameter adaptation method provided in the second embodiment of the present application, where the memory parameter adaptation method is applied to a terminal device. As shown in fig. 4, the memory parameter adapting method may include the following steps:
The step 401 is the same as the step 101, and reference may be made to the related description of the step 101, which is not described herein again.
As an optional embodiment, before obtaining the values of the M groups of first parameters, values of N memory parameters in the reference device of the device to be tested may be obtained first; performing a fourth pressure test on the memory based on the values of the N memory parameters in the reference device; and if the fourth pressure test fails, acquiring M groups of first parameter values of the N memory parameters.
The reference device may be an embedded device that is closer to a device to be tested in the presence of one or more hardware. Such hardware includes, but is not limited to, PCB, DDR frequency, granular type, etc.
When obtaining the M groups of first parameter values, the values of N memory parameters in the reference device may be used for reference, and a fourth pressure test is attempted to be performed by using the values of N memory parameters in the reference device, and if the test is successful, the values of N memory parameters in the reference device may be directly used as final values of N memory parameters in the device to be tested, so that value search is not required, and the adaptation efficiency of the memory parameters is improved.
As an optional embodiment, if the fourth pressure test fails, acquiring M sets of first parameter values of the N memory parameters includes:
if the fourth pressure test fails, adjusting the value of at least one memory parameter in the reference equipment according to the hardware difference between the reference equipment and the equipment to be tested to obtain the alternative values of the N memory parameters; if the adjusted memory parameters and the unadjusted memory parameters exist in the N memory parameters, determining that the alternative values of the N memory parameters comprise adjusted values of the adjusted memory parameters and values of the unadjusted memory parameters; if the N memory parameters are all adjusted memory parameters, determining that the alternative values of the N memory parameters comprise adjusted values of the N adjusted memory parameters; the adjusted memory parameter refers to a memory parameter of an adjusted value; the unadjusted memory parameter refers to a memory parameter with an unadjusted value;
performing a fourth pressure test on the memory again based on the alternative values of the N memory parameters;
and if the fourth pressure test fails again, acquiring M groups of first parameter values of the N memory parameters.
Taking PCB, DDR frequency and particle model as examples to introduce whether the values of N memory parameters in the reference device need to be adjusted. For convenience of description, the memory in the device under test is referred to as a memory under test, and the memory in the reference device is referred to as a reference memory. The specific adjustment is as follows:
(1) the method aims at the situation that the reference memory and the memory to be tested have the same grain model and DDR frequency and the PCB is different (for example, the memory to be tested is a new product or a new hardware structure).
If the DDR layout and wiring of the memory to be tested is unchanged and other parts of the PCB are changed compared with the reference memory, the values of N memory parameters in the reference equipment do not need to be adjusted generally;
if the DDR layout wiring of the memory to be tested is changed compared with the reference memory, the values of N memory parameters in the reference device can be adjusted according to the specific condition of failure of the fourth pressure test and by referring to past experience;
if the power supply of the memory to be tested is modified compared with the reference memory, the values of N memory parameters in the reference equipment do not need to be adjusted generally;
if the number of layers of the PCB of the memory to be tested is modified and the signal quality is attenuated compared with the reference memory, the values of N memory parameters in the reference equipment can be adjusted according to the specific condition of the failure of the fourth pressure test and by referring to the past experience;
if the memory to be tested has no termination resistance compared to the reference memory, the driving strength of the control channel (e.g., clock signal, address signal) is adjusted.
(2) Aiming at the conditions that the PCB and DDR frequencies of the reference memory and the memory to be tested are the same and the particle models are different (for example, the memory to be tested is a new product, the working temperature range is changed, the cost is reduced, the prototype number particles are stopped producing and the like).
If the reference memory and the memory to be measured are of the same manufacturer, the same capacity and different specifications (for example, the highest frequency is different, the working temperature range is different, etc.), the values of the N memory parameters in the reference device do not need to be adjusted;
if the reference memory and the memory to be tested are of the same manufacturer and different tape-out versions, the values of N memory parameters in the reference equipment can be adjusted according to the specific condition of the failure of the fourth pressure test and by referring to the past experience;
if the reference memory and the memory to be tested are the same manufacturer and have different capacities, only the value of the capacity can be modified;
if the reference memory and the memory to be tested are of different manufacturers and have the same capacity, the values of the N memory parameters in the reference equipment can be finely adjusted according to the specific condition that the fourth pressure test fails and by referring to the past experience.
(3) Aiming at the condition that the PCB and the grain model of the reference memory and the memory to be tested are the same and the DDR frequency is different (for example, the condition that the performance requirement changes), the value of the DDR frequency can be only modified.
(4) And aiming at the condition that more than two factors of the PCB, the particle model and the DDR frequency of the reference memory and the memory to be tested are different, the values of N memory parameters in the reference equipment can be finely adjusted according to the specific condition of the failure of the fourth pressure test and the previous experience.
If the fourth pressure test of the memory fails based on the values of the N memory parameters in the reference device, it is determined that the values of the N memory parameters in the reference device cannot enable the stability of the memory to meet preset requirements, the fourth pressure test of the memory fails again by selecting and adjusting the values of some memory parameters, if the fourth pressure test succeeds, the adjusted values can be determined to be final values, and if the fourth pressure test fails again, M groups of first parameter values are obtained to automatically search the final values from the values in a large range.
It should be noted that the test case and the test time of the fourth pressure test are not limited in this application. For example, the test case of the fourth stress test may be the same as the test case of the third stress test in step 408, and the test time of the fourth stress test may be the same as the test time of the third stress test in step 408.
The step 402 is the same as the step 102, and reference may be made to the related description of the step 102, which is not repeated herein.
In step 403, if the number of groups of second parameter values in which the first pressure test is successful in the M groups of first parameter values is greater than H, candidate values of the N memory parameters are determined from all values of the N memory parameters in all groups of second parameter values.
Step 403 is the same as step 103, and reference may be made to the related description of step 103, which is not described herein again.
The step 404 is the same as the step 104, and reference may be made to the related description of the step 104, which is not repeated herein.
In step 405, if the number of the groups of the third parameter values is greater than L, the third parameter values of all the groups are taken as reference parameter values.
Wherein L is an integer greater than 1 and less than M.
If the number of the third parameter value groups is greater than L, it indicates that the value range to be searched is still large, and a medium-time pressure test (i.e., a second pressure test) may be performed on the memory based on the third parameter value, so as to further narrow the search range.
In step 406, a second pressure test is performed on the memory based on all the sets of reference parameter values.
And the testing time of the second pressure test is longer than that of the first pressure test. For example, the test time of the first pressure test ranges from 2 minutes to 10 minutes, and the test time of the second pressure test ranges from 30 minutes to 6 hours.
In step 407, if the number of groups of the fourth parameter values successfully subjected to the second pressure test in all the groups of reference parameter values is greater than L, the fourth parameter value is taken as the reference parameter value, and the test parameter of the second pressure test is adjusted.
The test parameters of the second pressure test comprise the test time and/or the test case type of the second pressure test.
After step 407 is executed, the step of performing the second stress test on the memory based on all the groups of reference parameter values and the subsequent steps are returned to execute, so that the search range can be gradually narrowed, and the number of groups of parameter values that are successful in the second stress test on the memory is smaller than or equal to L.
And 408, if the group number of the fourth parameter values is greater than zero and less than or equal to L, performing a third pressure test on the memory based on all the fourth parameter values, and determining the fourth parameter value successful in the third pressure test as the target parameter value.
And the testing time of the third pressure test is longer than that of the second pressure test. For example, the test time of the third pressure test may range from greater than 12 hours.
If the number of groups of the fourth parameter values is greater than zero and less than or equal to L, it indicates that the value range to be searched is relatively small, and a long-time pressure test (i.e., a third pressure test) can be directly performed on the memory based on the fourth parameter values, so as to further narrow the search range, and a target parameter value capable of enabling the stability of the memory to meet the preset requirement is searched from all the groups of the fourth parameter values. If the third pressure test of a certain group of fourth parameter values in the memory is successful, the group of fourth parameter values is taken as the target parameter value.
And 409, if the number of the groups of the third parameter values is greater than zero and less than or equal to L, performing a third pressure test on the memory based on all the third parameter values, and determining the third parameter value successful in the third pressure test as the target parameter value.
If the number of groups of the third parameter values is greater than zero and less than or equal to L, it indicates that the value range to be searched is relatively small, and a long-time pressure test (i.e., a third pressure test) can be directly performed on the memory based on the third parameter values, so as to further narrow the search range, and a target parameter value capable of enabling the stability of the memory to meet the preset requirement is searched from all the groups of the third parameter values. If the third pressure test of a certain group of third parameter values to the memory is successful, the group of third parameter values is indicated as target parameter values.
In an actual application scenario, an example of the memory parameter search process is shown in fig. 5. In fig. 5, values of N memory parameters in the reference device may be used for reference, a fourth pressure test may be performed on the memory in the device to be tested based on the values of the N memory parameters of the reference device, if the fourth pressure test is successful, the values of the N memory parameters of the reference device are determined to be final values of the N memory parameters, and the process is ended; if the fourth pressure test fails, the value of an individual memory parameter of the N memory parameters can be adjusted, the fourth pressure test is performed on the memory based on the adjusted value, if the fourth pressure test succeeds, the adjusted value is determined to be a final value, if the fourth pressure test fails, a large-scale search can be performed based on M groups of first parameter values, then the search range is automatically narrowed based on the third parameter value, and finally, a small-scale pressure test is performed based on the fourth parameter value (that is, when the number of groups of the fourth parameter value is greater than zero and less than or equal to L, the third pressure test is performed on the fourth parameter value).
According to the embodiment of the application, the memory is subjected to pressure tests with different test times for many times, so that the search range can be gradually reduced, the accuracy of the final value of the memory parameter is improved, manual participation is not needed in the search process, the search efficiency of the value is improved, and the adaptation efficiency of the memory parameter is improved.
It should be noted that the present application does not limit the pressure testing environment of the memory. For example, when there is a high-temperature and low-temperature changing environment, the memory may be first subjected to a pressure test in the high-temperature and low-temperature changing environment to obtain a value of a memory parameter that can make the memory have a strong stability; if the stability performance of the memory in the high-temperature interval or the low-temperature interval in the environment with high and low temperature changes is poor, the memory can be independently subjected to pressure test in the constant high-temperature environment or the constant low-temperature environment, so that the screening of the value of the memory parameter is accelerated. Of course, the memory may be pressure tested in a normal temperature environment, and then pressure tests may be performed in a constant high temperature environment or an environment with high and low temperature changes in sequence, which is not limited herein. The specific temperature value may be determined according to the working requirement of the memory.
Optionally, the test cases of the first pressure test, the second pressure test, the third pressure test and the fourth pressure test may be completely the same, may be partially the same, or may be different, and are not limited herein.
Fig. 6 is a schematic structural diagram of a memory parameter adaptation device provided in the third embodiment of the present application, and for convenience of description, only parts related to the third embodiment of the present application are shown.
The memory parameter adapting device comprises:
a first obtaining module 61, configured to obtain M groups of first parameter values of N memory parameters, where each group of the first parameter values is a value combination of the N memory parameters, M is an integer greater than 1, and N is an integer greater than zero;
the first testing module 62 is configured to perform a first pressure test on memories in the devices to be tested respectively based on the M groups of first parameter values;
a first determining module 63, configured to determine, if a group number of second parameter values in which the first pressure test is successful in M groups of the first parameter values is greater than H, N candidate values of the memory parameter from all values of the N memory parameters in all groups of the second parameter values, where a candidate value of a memory parameter is a value in which an occurrence frequency of the memory parameter in the second parameter values of all groups exceeds a frequency threshold, and H is an integer greater than 1 and less than M;
a value combining module 64, configured to combine the candidate values of the N memory parameters to obtain a third parameter value;
a second determining module 65, configured to determine a target parameter value from the third parameter values of all groups, where the target parameter value is a value of N memory parameters that enable the stability of the memory to meet a preset requirement.
Optionally, the second determining module 65 is specifically configured to:
a parameter determining unit, configured to take the third parameter values of all groups as reference parameter values if the number of groups of the third parameter values is greater than L, where L is an integer greater than 1 and less than M;
the pressure test unit is used for respectively carrying out second pressure test on the memory based on all the groups of reference parameter values, and the test time of the second pressure test is longer than that of the first pressure test;
a parameter adjusting unit, configured to, if a group number of fourth parameter values that are successful in the second pressure test among all groups of the reference parameter values is greater than L, take the fourth parameter value as the reference parameter value, adjust a test parameter of the second pressure test, and return to the execution of the pressure test unit and subsequent units, where the test parameter of the second pressure test includes a test time and/or a test case type of the second pressure test;
a first processing unit, configured to perform a third pressure test on the memory based on all fourth parameter values if the number of sets of the fourth parameter values is greater than zero and less than or equal to L, and determine that the fourth parameter value that is successful in the third pressure test is the target parameter value, where a test time of the third pressure test is longer than a test time of the second pressure test;
and the second processing unit is configured to perform the third pressure test on the memory based on all the third parameter values if the number of sets of the third parameter values is greater than zero and less than or equal to L, and determine that the third parameter value that is successful in the third pressure test is the target parameter value.
Optionally, the memory parameter adapting device further includes:
a value display module, configured to display at least two groups of target parameter values if the number of groups of target parameter values is at least two groups;
and the value selection module is used for determining N selected target parameter values as the final values of the N memory parameters when receiving the selection operation of any one of the at least two groups of target parameter values.
Optionally, the memory parameter adapting device further includes:
and the median determination module is used for taking the median of all values of the memory parameter in at least two groups of target parameter values as the final value of the memory parameter for each memory parameter if the number of the groups of the target parameter values is at least two groups.
Optionally, the memory parameter adapting device further includes:
a second obtaining module, configured to obtain values of N memory parameters in a reference device of the device to be tested;
the second testing module is used for carrying out a fourth pressure test on the memory based on the values of the N memory parameters in the reference equipment;
the first obtaining module 61 is specifically configured to:
and if the fourth pressure test fails, acquiring M groups of first parameter values of the N memory parameters.
Optionally, the first obtaining module 61 is specifically configured to:
if the fourth pressure test fails, adjusting the value of at least one memory parameter in the reference equipment according to the hardware difference between the reference equipment and the equipment to be tested to obtain N alternative values of the memory parameters; if an adjusted memory parameter and an unadjusted memory parameter exist in the N memory parameters, determining that the alternative values of the N memory parameters comprise an adjusted value of the adjusted memory parameter and a value of the unadjusted memory parameter; if the N memory parameters are all adjusted memory parameters, determining that the alternative values of the N memory parameters comprise adjusted values of the N adjusted memory parameters; the adjusted memory parameter refers to the memory parameter of the adjusted value; the unadjusted memory parameter refers to the memory parameter with unadjusted value;
performing the fourth pressure test on the memory again based on the N candidate values of the memory parameters;
and if the fourth pressure test fails again, acquiring M groups of first parameter values of the N memory parameters.
Optionally, the first obtaining module 61 is specifically configured to:
obtaining S groups of initial parameter values of N memory parameters, wherein each group of initial parameter values is a value combination of the N memory parameters, and S is an integer greater than or equal to M;
initializing the memories respectively based on the S groups of initial parameter values;
and determining the initial parameter value which is initialized successfully as the first parameter value.
The memory parameter adaptation device provided in the embodiment of the present application may be applied to the first method embodiment and the second method embodiment, and for details, reference is made to the description of the first method embodiment and the second method embodiment, and details are not described herein again.
Fig. 7 is a schematic structural diagram of a terminal device according to a fourth embodiment of the present application. As shown in fig. 7, the terminal device 7 of this embodiment includes: one or more processors 70 (only one shown), a memory 71, and a computer program 72 stored in the memory 71 and executable on the at least one processor 70. The processor 70 implements the steps of the above-described embodiments of the memory parameter adaptation method when executing the computer program 72.
The terminal device 7 may be a desktop computer, a notebook, a palm computer, a cloud server, or other computing devices. The terminal device may include, but is not limited to, a processor 70, a memory 71. It will be appreciated by those skilled in the art that fig. 7 is merely an example of a terminal device 7 and does not constitute a limitation of the terminal device 7 and may comprise more or less components than shown, or some components may be combined, or different components, for example the terminal device may further comprise input output devices, network access devices, buses, etc.
The processor 70 may be a neural network chip, and may be a CPU, other general purpose processor, a DSP, an Application Specific Integrated Circuit (ASIC), an off-the-shelf Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, or the like. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The memory 71 may be an internal storage unit of the terminal device 7, such as a hard disk or a memory of the terminal device 7. The memory 71 may also be an external storage device of the terminal device 7, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), and the like, which are provided on the terminal device 7. Further, the memory 71 may also include both an internal storage unit and an external storage device of the terminal device 7. The memory 71 is used for storing the computer program and other programs and data required by the terminal device. The memory 71 may also be used to temporarily store data that has been output or is to be output.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned function distribution may be performed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-mentioned functions. Each functional unit and module in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit, and the integrated unit may be implemented in a form of hardware, or in a form of software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working processes of the units and modules in the above-mentioned apparatus may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus/terminal device and method may be implemented in other ways. For example, the above-described embodiments of the apparatus/terminal device are merely illustrative, and for example, the division of the modules or units is only one logical division, and there may be other divisions when actually implemented, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present application may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated modules/units, if implemented in the form of software functional units and sold or used as separate products, may be stored in a computer readable storage medium. Based on such understanding, all or part of the flow in the method of the embodiments described above can be realized by a computer program, which can be stored in a computer-readable storage medium and can realize the steps of the embodiments of the methods described above when the computer program is executed by a processor. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, and the like. It should be noted that the computer readable medium may contain content that is subject to appropriate increase or decrease as required by legislation and patent practice in jurisdictions, for example, in some jurisdictions, computer readable media does not include electrical carrier signals and telecommunications signals as is required by legislation and patent practice.
When the computer program product runs on a terminal device, the terminal device can implement the steps in the memory parameter adaptation method embodiments.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.
Claims (10)
1. A memory parameter adaptation method is characterized in that the memory parameter adaptation method comprises the following steps:
obtaining M groups of first parameter values of N memory parameters, wherein each group of first parameter values is a value combination of N memory parameters, M is an integer larger than 1, and N is an integer larger than zero;
respectively carrying out first pressure tests on the memories in the equipment to be tested based on the M groups of first parameter values;
if the number of groups of second parameter values in which the first pressure test is successful in M groups of first parameter values is greater than H, determining N candidate values of the memory parameters from all values of the N memory parameters in all groups of second parameter values, wherein one candidate value of the memory parameter refers to a value of which the occurrence frequency of the memory parameter in all groups of second parameter values exceeds a frequency threshold, and H is an integer greater than 1 and less than M;
combining the N candidate values of the memory parameters to obtain a third parameter value;
and determining a target parameter value from the third parameter values of all the groups, wherein the target parameter value is the value of N memory parameters which enable the stability of the memory to reach the preset requirement.
2. The memory parameter adaptation method according to claim 1, wherein the determining a target parameter value from the third parameter values of all groups comprises:
if the number of the groups of the third parameter values is greater than L, taking the third parameter values of all the groups as reference parameter values, wherein L is an integer which is greater than 1 and less than M;
respectively carrying out second pressure tests on the memory based on all the groups of reference parameter values, wherein the test time of the second pressure tests is longer than that of the first pressure tests;
if the number of groups of the fourth parameter values successfully subjected to the second pressure test in all the groups of reference parameter values is greater than L, taking the fourth parameter values as the reference parameter values, adjusting the test parameters of the second pressure test, and returning to execute the step of respectively performing the second pressure test on the memory based on all the groups of reference parameter values and the subsequent steps, wherein the test parameters of the second pressure test comprise the test time and/or the test case type of the second pressure test;
if the number of groups of the fourth parameter values is greater than zero and less than or equal to L, performing a third pressure test on the memory based on all the fourth parameter values, and determining that the fourth parameter values successfully subjected to the third pressure test are the target parameter values, wherein the test time of the third pressure test is longer than that of the second pressure test;
and if the number of the groups of the third parameter values is greater than zero and less than or equal to L, performing the third pressure test on the memory based on all the third parameter values, and determining the third parameter value which is successfully subjected to the third pressure test as the target parameter value.
3. The method of claim 1, further comprising:
if the number of the groups of the target parameter values is at least two groups, displaying at least two groups of the target parameter values;
and when receiving a selection operation of any one of the at least two groups of target parameter values, determining N values of the selected target parameter values as final values of the N memory parameters.
4. The method of claim 1, further comprising:
and if the number of the groups of the target parameter values is at least two groups, taking the median of all values of the memory parameter in the at least two groups of the target parameter values as the final value of the memory parameter for each memory parameter.
5. The method of claim 1, further comprising:
obtaining values of N memory parameters in reference equipment of the equipment to be tested;
performing a fourth pressure test on the memory based on the values of the N memory parameters in the reference device;
the obtaining of the M sets of first parameter values of the N memory parameters includes:
and if the fourth pressure test fails, acquiring M groups of first parameter values of the N memory parameters.
6. The method according to claim 5, wherein if the fourth stress test fails, obtaining M sets of the first parameter values of the N memory parameters includes:
if the fourth pressure test fails, adjusting the value of at least one memory parameter in the reference equipment according to the hardware difference between the reference equipment and the equipment to be tested to obtain N alternative values of the memory parameters; if an adjusted memory parameter and an unadjusted memory parameter exist in the N memory parameters, determining that the alternative values of the N memory parameters comprise an adjusted value of the adjusted memory parameter and a value of the unadjusted memory parameter; if the N memory parameters are all adjusted memory parameters, determining that the alternative values of the N memory parameters comprise adjusted values of the N adjusted memory parameters; the adjusted memory parameter refers to the memory parameter of the adjusted value; the unadjusted memory parameter refers to the memory parameter with unadjusted value;
performing the fourth pressure test on the memory again based on the N candidate values of the memory parameters;
and if the fourth pressure test fails again, acquiring M groups of first parameter values of the N memory parameters.
7. The memory parameter adaptation method according to any one of claims 1 to 6, wherein the obtaining of the M sets of first parameter values of the N memory parameters includes:
obtaining S groups of initial parameter values of N memory parameters, wherein each group of initial parameter values is a value combination of the N memory parameters, and S is an integer greater than or equal to M;
initializing the memories respectively based on the S groups of initial parameter values;
and determining the initial parameter value which is initialized successfully as the first parameter value.
8. A memory parameter adapting device, the memory parameter adapting device comprising:
a first obtaining module, configured to obtain M groups of first parameter values of N memory parameters, where each group of the first parameter values is a value combination of the N memory parameters, M is an integer greater than 1, and N is an integer greater than zero;
the first testing module is used for respectively carrying out first pressure testing on the memory in the equipment to be tested based on the M groups of first parameter values;
a first determining module, configured to determine, if a group number of second parameter values, in the M groups of first parameter values, for which the first pressure test is successful is greater than H, N candidate values of the memory parameter from all values of the N memory parameters in all groups of the second parameter values, where a candidate value of a memory parameter is a value in which an occurrence frequency of the memory parameter in the second parameter values of all groups exceeds a frequency threshold, and H is an integer greater than 1 and less than M;
the value combination module is used for combining the candidate values of the N memory parameters to obtain a third parameter value;
and the second determining module is used for determining a target parameter value from the third parameter values of all the groups, wherein the target parameter value is the value of N memory parameters which enable the stability of the memory to meet the preset requirement.
9. A terminal device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that the processor implements the steps of the memory parameter adaptation method according to any one of claims 1 to 7 when executing the computer program.
10. A computer-readable storage medium, in which a computer program is stored which, when being executed by a processor, carries out the steps of the memory parameter adaptation method according to any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111653051.0A CN114416446A (en) | 2021-12-30 | 2021-12-30 | Memory parameter adaptation method and device, terminal equipment and storage medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111653051.0A CN114416446A (en) | 2021-12-30 | 2021-12-30 | Memory parameter adaptation method and device, terminal equipment and storage medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114416446A true CN114416446A (en) | 2022-04-29 |
Family
ID=81269610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111653051.0A Pending CN114416446A (en) | 2021-12-30 | 2021-12-30 | Memory parameter adaptation method and device, terminal equipment and storage medium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114416446A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115061860A (en) * | 2022-05-20 | 2022-09-16 | 飞腾信息技术有限公司 | Single-channel system memory debugging method, device and medium |
-
2021
- 2021-12-30 CN CN202111653051.0A patent/CN114416446A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115061860A (en) * | 2022-05-20 | 2022-09-16 | 飞腾信息技术有限公司 | Single-channel system memory debugging method, device and medium |
| CN115061860B (en) * | 2022-05-20 | 2023-08-29 | 飞腾信息技术有限公司 | Method, device and medium for debugging memory of one-way system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE102011089889A1 (en) | A method of booting an information handling system and information handling system | |
| US10978170B2 (en) | Method and system for monitoring information of a memory module in real time | |
| US9330031B2 (en) | System and method for calibration of serial links using a serial-to-parallel loopback | |
| DE112015003397T5 (en) | Apparatus, system and method for determining comparison information based on storage data | |
| US10148416B2 (en) | Signal phase optimization in memory interface training | |
| US20140181452A1 (en) | Hardware command training for memory using read commands | |
| US10795592B2 (en) | System and method for setting communication channel equalization of a communication channel between a processing unit and a memory | |
| US9824772B2 (en) | Hardware chip select training for memory using read commands | |
| CN111045970B (en) | PHY parameter debugging method, device, storage medium and electronic equipment | |
| US20170262337A1 (en) | Memory module repair system with failing component detection and method of operation thereof | |
| TWI692773B (en) | Techniques for clock signal jitter generation | |
| US7984326B2 (en) | Memory downsizing in a computer memory subsystem | |
| US9728236B1 (en) | System and method of training optimization for dual channel memory modules | |
| CN114416446A (en) | Memory parameter adaptation method and device, terminal equipment and storage medium | |
| CN113014339A (en) | Quality test method, device and equipment for PCIe external plug-in card receiving channel | |
| CN117077221A (en) | Hard disk screen printing distribution method and device, computer equipment and medium | |
| CN112256514A (en) | SDIO interface test method and device, storage medium and terminal | |
| US7275186B2 (en) | Memory bus checking procedure | |
| US11923042B2 (en) | Apparatus, memory device, and method reducing clock training time | |
| US20150323602A1 (en) | Monitoring method, monitoring apparatus, and electronic device | |
| US11515860B2 (en) | Deterministic jitter generator with controllable probability distribution | |
| CN115966237A (en) | Screening method and device for bad blocks of hard disk, storage medium and electronic device | |
| CN112000591B (en) | SSD scanning method capable of designating logical block address, SSD scanning device, SSD scanning computer equipment and storage medium | |
| CN113254290A (en) | Memory particle multidimensional test method, device and system and readable storage medium | |
| CN113779926A (en) | Circuit detection method and device, electronic equipment and readable storage medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |