CN114414846A - Structure for improving mode separation ratio of Fabry-Perot MEMS acceleration sensitive chip - Google Patents
Structure for improving mode separation ratio of Fabry-Perot MEMS acceleration sensitive chip Download PDFInfo
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/093—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by photoelectric pick-up
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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Abstract
The invention relates to the technical field of micro electro mechanical systems, in particular to a structure for improving the mode separation ratio of a Fabry-Perot MEMS acceleration sensitive chip, which comprises a fixed mirror surface, a movable mirror surface and a supporting seat, wherein the movable mirror surface comprises an MEMS spring mass structure and a second optical film; the MEMS spring mass structure comprises a double-layer support beam structure, an MEMS mass block and a fixed frame, wherein the double-layer support beam structure is arranged in a full-symmetry manner; the second optical film is disposed on the MEMS proof mass. The invention can obviously improve the ratio of the out-of-plane torsional mode frequency of the chip to the out-of-plane vibration mode frequency, can obviously inhibit the cross sensitivity caused by the out-of-plane torsion of the MEMS mass block under the action of the acceleration signal in the non-sensitive axis direction and the influence on the sensitivity and the measuring range of the sensor, ensures the parallelism of the fixed mirror surface and the movable mirror surface of the Fabry-Perot cavity, and also solves the problem of mode mutual interference in the measurement process.
Description
Technical Field
The invention relates to the technical field of micro electro mechanical systems, in particular to a structure for improving the mode separation ratio of a Fabry-Perot MEMS acceleration sensitive chip.
Background
The acceleration sensor can realize the measurement of acceleration, speed and position, and is a key component in the application fields of automobile safety, earthquake detection, inertial navigation and the like. In recent years, due to the rapid development of the micro-nano manufacturing technology and the inherent advantages of the technology, such as mass production, low price, high yield and the like, the MEMS acceleration sensor with the advantages of high precision, small volume, low power consumption and the like gradually occupies the market of the traditional acceleration sensor, and becomes a large class of acceleration sensors. With the further improvement of the performance requirements of people on the MEMS acceleration sensor, people integrate an optical detection technology and an MEMS structure into a whole to form the optical MEMS acceleration sensor, and the acceleration sensor has the advantages of high sensitivity and detection precision, electromagnetic interference resistance and the like.
In current industrial application, most of the optical MEMS acceleration sensors are optical fiber MEMS acceleration sensors, and are characterized in that an optical fiber is used as a light guide medium and is combined with an MEMS structure. However, the optical MEMS acceleration sensor of this type has low sensitivity and large light source volume, which is not suitable for the miniaturization and integration of the sensor. The integrated optical MEMS acceleration sensor integrates the light source, the optical system and the MEMS structure, solves the problems of performance, cost and volume of the optical fiber type optical acceleration sensor, and receives more and more attention.
The Fabry-Perot optical MEMS acceleration sensor is an important integrated optical MEMS acceleration sensor type, the core element of the Fabry-Perot optical MEMS acceleration sensor is a Fabry-Perot optical MEMS acceleration sensitive chip, the sensitive chip is insensitive to in-plane movement and rotation of an MEMS mass block, and the main factor influencing the cross sensitivity of the sensitive chip is the out-of-plane rotation of the MEMS mass block serving as a movable mirror when the MEMS mass block is subjected to acceleration. Meanwhile, the rotation out of the plane can also cause an included angle to be generated between the movable mirror and the fixed mirror of the Fabry-Perot cavity, so that the sensitivity and the measuring range of the acceleration sensor are changed. However, if the resonant frequency of the out-of-plane torsional mode is close to the operating frequency band of the acceleration sensor, the out-of-plane torsional mode is easily excited, and the measurement of the acceleration sensor is adversely affected. Therefore, how to design a structure for improving the mode separation ratio of the Fabry-Perot MEMS acceleration sensitive chip under the existing micro-manufacturing level solves the problems of mode mutual interference and cross sensitivity in the measurement process, and becomes a difficult problem which must be faced in the design process of the sensor chip.
The paper Analysis and Optimization about the cross-sensitivity of a High resolution MOEMS Accelerometer based on the requirement designs an acceleration sensitive chip with a thin-walled supporting beam structure and analyzes the influence of cross-axis crosstalk on a grating type MEMS Accelerometer, the center of gravity of a single-Layer thin-walled supporting beam structure of the chip and the center of gravity of an MEMS mass block are not on the same plane, so that the modal suppression is smaller, and the phenomenon of obvious cross-axis crosstalk exists, in order to further improve the Performance, the paper finally provides an improved scheme of arranging the center of gravity of the single-Layer thin-walled supporting beam structure of the chip and the center of gravity of the MEMS mass block on the same plane, the paper Design, Optimization, and the reaction of a High-Performance MOEMS particle From a Double SOI-Device-Layer Wafer further expands the improved idea of the paper, a MOEMS chip is manufactured by using a double-device-layer SOI wafer, and the acceleration displacement sensitivity of the MOEMS chip is 158.2 mu m/g, and the modal suppression ratio of the MOEMS chip is 5.309. From the experimental results of this paper, the achievable modal separation ratio is still lower with this structural solution, and further improvement is needed.
Chinese patent No. 202011594186.X applied a double-deck S type meandering cantilever beam sensitive structure that can solve accelerometer cross axis crosstalk in the realization process of integrating the optical-mechanical accelerometer on the basis of the hemispherical FP cavity piece that provides, this structure utilizes seven layers of SOI base sheet stack of customization to make into, the modal separation ratio can reach 12, but the technological process is comparatively complicated, and this double-deck S type meandering cantilever beam structure because of the etching masking problem, lead to upper and lower two-layer spring must the staggered arrangement, otherwise can't finish the upper and lower two-layer spring quality structural corrasion at the same time, this kind of structure is unfavorable for acceleration sensitive structure to the inhibition of cross axis sensitivity and improvement of modal separation ratio.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a structure for improving the mode separation ratio of a Fabry-Perot MEMS acceleration sensitive chip.
The invention is realized by the following technical scheme:
a structure for improving the mode separation ratio of a Fabry-Perot MEMS acceleration sensitive chip comprises a fixed mirror surface, a movable mirror surface and a supporting seat, wherein the movable mirror surface is arranged between the fixed mirror surface and the supporting seat in a hanging manner, and the movable mirror surface and the fixed mirror surface form a Fabry-Perot cavity together; the fixed mirror comprises a light-transmitting solid flat plate and a first optical film, the movable mirror comprises an MEMS spring mass structure and a second optical film, and the second optical film is arranged on one side, close to the first optical film, of the MEMS spring mass structure; the MEMS spring mass structure comprises a double-layer support beam structure, an MEMS mass block and a fixed frame, wherein the MEMS mass block is connected with the fixed frame through the double-layer support beam structure, and the double-layer support beam structure is arranged in a full-symmetry manner; the second optical film is disposed on the MEMS proof mass.
Preferably, a first groove is arranged on one side, close to the movable mirror, of the light-transmitting solid flat plate, and the first groove is used for providing a moving space for the MEMS spring mass structure.
Preferably, the first optical film is disposed on the bottom wall of the first groove.
Preferably, the second optical film is formed by alternately combining silicon dioxide and silicon nitride.
Preferably, the MEMS spring-mass structure is made from an SOI wafer.
Preferably, the double-layer supporting beam comprises a plurality of L-shaped micro beams, the number of the micro beams is even, the micro beams are divided into two groups, and the micro beams are arranged in an up-and-down symmetrical structure.
Preferably, the thickness of the micro-beam is the same as the thickness of the device layer of the SOI wafer.
Preferably, the MEMS spring mass structure is processed by an MEMS bulk silicon process.
Preferably, a second groove is arranged on one side, close to the movable mirror, of the supporting seat, and the second groove is used for providing a moving space for the MEMS spring mass structure.
Preferably, the fixed mirror and the supporting seat are connected with the end part of the double-layer supporting beam in a bonding mode or a gluing mode.
Compared with the prior art, the invention has the following beneficial effects:
the structure for improving the mode separation ratio of the Fabry-Perot MEMS acceleration sensitive chip can obviously improve the ratio of the out-of-plane torsional mode frequency of the chip to the out-of-plane vibration mode frequency by means of a double-layer full-symmetrical supporting beam structure relative to an asymmetrical double-layer supporting beam or a single-layer supporting beam, can obviously inhibit the cross sensitivity and the influence on the sensitivity and the measuring range of a sensor caused by the out-of-plane torsion of an MEMS mass block under the action of acceleration signals in the non-sensitive axis direction, ensures the parallelism of a fixed mirror surface and a movable mirror surface of a Fabry-Perot cavity, and solves the problem of mode mutual interference in the measuring process.
The mode separation ratio of the Fabry-Perot optical MEMS acceleration sensitive chip can be greatly improved through the double-layer supporting beams which are arranged in a full-symmetrical mode, the structure is completely symmetrical relative to the gravity center plane of the MEMS mass block, the length and the width of the beams are reasonably designed, the out-of-plane vibration rigidity of the MEMS spring mass structure is very easy to be far smaller than the out-of-plane torsion rigidity, and the natural frequency of the out-of-plane vibration mode is far smaller than the natural frequency of the out-of-plane torsion mode.
Further, the first groove and the second groove are both for providing a sufficient movement space for the movable mirror.
Furthermore, the reflectivity of the light-transmitting solid flat plate can be increased by the second optical film formed by alternately combining silicon dioxide and silicon nitride, so that the sensitivity of the Fabry-Perot MEMS acceleration sensitive chip is increased.
Furthermore, the arrangement of the miniature beam enables the upper and lower beams of the double-layer supporting beam structure to be subjected to the same torque, the total torque is zero, the MEMS mass block cannot generate extra torque, and further the acceleration measurement in the sensitive axis direction cannot be influenced, so that the purposes of improving the modal separation ratio and inhibiting the cross sensitivity are achieved.
Further, the thickness of the micro-beam is the same as the thickness of the device layer of the SOI wafer, in order to facilitate controlling the thickness of the micro-beam.
Furthermore, the MEMS bulk silicon process is convenient for realizing the processing of the MEMS mass block with large thickness.
Drawings
FIG. 1 is an overall schematic diagram of a structure for improving a mode separation ratio of a Fabry-Perot MEMS acceleration sensitive chip according to the present invention;
FIG. 2 is an exploded view of a structure for improving the modal separation ratio of a Fabry-Perot MEMS acceleration sensitive chip according to the present invention;
FIG. 3 is a schematic cross-sectional view of a Fabry-Perot optical MEMS acceleration sensitive chip;
FIG. 4 is a schematic three-dimensional structure of a MEMS spring-mass structure with a two-layer fully symmetric support beam structure;
FIG. 5 is a graph of an out-of-plane torsional mode simulation of a MEMS spring-mass structure with a two-layer fully symmetric support beam structure;
FIG. 6 is a simulation of the out-of-plane vibrational mode of a MEMS spring-mass structure with a two-layer fully symmetric support beam structure.
In the figure, 1, a fixed mirror surface; 2. a movable mirror surface; 3. a supporting seat; 4. a fixed frame; 5. a double-layer support beam structure; 6. a first optical film; 7. a MEMS mass block; 8. a light-transmissive solid plate; 9. a first groove; 10. a Fabry-Perot cavity; 11. a second optical film; 12. a MEMS spring mass structure; 13. a second groove.
Detailed Description
The present invention will now be described in further detail with reference to specific examples, which are intended to be illustrative, but not limiting, of the invention.
With the rapid development of micro-nano manufacturing technology and the expansion of market demand, the MEMS acceleration sensor is gradually replacing the traditional acceleration sensor. The Fabry-Perot optical MEMS acceleration sensor integrates a Fabry-Perot cavity and the MEMS spring mass structure 12, introduces an optical detection technology into acceleration measurement, and has the advantages of high sensitivity, high detection precision, electromagnetic interference resistance and the like.
In the existing microfabrication level, how to provide a fabry-perot optical MEMS acceleration sensitive chip with a high separation ratio of out-of-plane rotation mode and out-of-plane vibration mode solves the problem of mode mutual interference during the measurement process, ensures parallelism of fabry-perot cavity, and becomes a difficult problem in the design process of sensor chip.
The invention discloses a structure for improving the mode separation ratio of a Fabry-Perot MEMS acceleration sensitive chip, which comprises a fixed mirror surface 1, a movable mirror surface 2 and a supporting seat 3, wherein the movable mirror surface 2 is arranged between the fixed mirror surface 1 and the supporting seat 3 in a suspended mode, and the movable mirror surface 2 and the fixed mirror surface 1 form a Fabry-Perot cavity 10 together.
The fixed mirror surface 1 comprises a light-transmitting solid flat plate 8 and a first optical film 6, a first groove 9 is formed in one side, close to the movable mirror surface 2, of the light-transmitting solid flat plate 8, and the first optical film 6 is arranged on the bottom wall of the first groove 9. The light-transmitting solid plate 8 has a high transmittance to laser light within a specific wavelength range (500 to 1000 nm).
The movable mirror 2 comprises a MEMS spring mass structure 12 and a second optical film 11, and the MEMS spring mass structure 12 is processed by an SOI wafer by adopting MEMS bulk silicon technology.
Referring to fig. 3, the MEMS spring mass structure 12 includes a double-layer support beam structure 5, a MEMS mass 7 and a fixed frame 4, the MEMS mass 7 is connected to the fixed frame 4 through the double-layer support beam structure 5, and the double-layer support beam structure 5 is arranged in a full symmetry manner.
Referring to fig. 4, the double-layered support beam includes a plurality of L-shaped micro beams, the number of the micro beams is an even number, the micro beams are divided into two groups, and the micro beams are arranged in an up-down symmetrical structure. In this embodiment, there are 8L-shaped micro beams, and the arrangement is consistent from head to tail. By adopting the full-symmetrical double-layer supporting beam structure, the upper and lower micro beams can be subjected to the same torque, the total torque is zero, the MEMS mass block 7 can not generate extra torque, and the acceleration measurement in the sensitive axis direction can not be influenced, so that the aims of improving the modal separation ratio and inhibiting the cross sensitivity are fulfilled. The thickness of the micro-beam is the same as the thickness of the device layer of the SOI wafer.
Referring to fig. 3, a second optical film 11 is disposed on a side of the MEMS proof mass 7 close to the first optical film 6, and the second optical film 11 is formed by alternately combining silicon dioxide and silicon nitride.
The side of the supporting seat 3 close to the movable mirror 2 is provided with a second groove 13, and the second groove 13 is used for providing a moving space for the MEMS spring mass structure 12.
The fixed mirror surface 1 and the supporting seat 3 are connected with the end part of the double-layer supporting beam in a bonding mode or a gluing mode.
Referring to fig. 5 and 6, the natural frequency of the out-of-plane vibration mode of the MEMS spring mass structure 12 of the structure for improving the mode separation ratio of the fabry-perot MEMS acceleration sensitive chip of the present invention is 104.47Hz, the natural frequency of the out-of-plane torsion mode is 2651.6Hz, and the mode separation ratio can reach 25.38. When the MEMS mass block 7 is subjected to acceleration in the non-sensitive axis direction, the upper layer beam and the lower layer beam of the double-layer supporting beam structure 5 are subjected to the same torque, the total torque is zero, the MEMS mass block cannot generate extra torque, and further the acceleration measurement in the sensitive axis direction cannot be influenced, so that the aims of improving the modal separation ratio and inhibiting the cross sensitivity are fulfilled.
Claims (10)
1. A structure for improving the mode separation ratio of a Fabry-Perot MEMS acceleration sensitive chip is characterized by comprising a fixed mirror (1), a movable mirror (2) and a supporting seat (3), wherein the movable mirror (2) is arranged between the fixed mirror (1) and the supporting seat (3) in a suspended mode, and the movable mirror (2) and the fixed mirror (1) jointly form a Fabry-Perot cavity (10); the fixed mirror (1) comprises a light-transmitting solid flat plate (8) and a first optical film (6), the movable mirror (2) comprises an MEMS spring mass structure (12) and a second optical film (11), and the second optical film (11) is arranged on one side, close to the first optical film (6), of the MEMS spring mass structure (12); the MEMS spring mass structure (12) comprises a double-layer supporting beam structure (5), an MEMS mass block (7) and a fixed frame (4), the MEMS mass block (7) is connected with the fixed frame (4) through the double-layer supporting beam structure (5), and the double-layer supporting beam structure (5) is arranged in a full-symmetry manner; the second optical film (11) is arranged on the MEMS mass block (7).
2. The structure for improving the mode separation ratio of the Fabry-Perot MEMS acceleration-sensitive chip according to claim 1, characterized in that a side of the light-transmissive solid plate (8) close to the movable mirror (2) is provided with a first groove (9), and the first groove (13) is used for providing a moving space for the MEMS spring mass structure (12).
3. The structure for improving the mode separation ratio of a fabry-perot MEMS acceleration-sensitive chip according to claim 2, characterized in that the first optical film (6) is disposed on the bottom wall of the first groove (9).
4. The structure for improving the mode separation ratio of a fabry-perot MEMS acceleration-sensitive chip according to claim 1, characterized in that the second optical film (11) is composed of silicon dioxide and silicon nitride alternately.
5. The structure for improving the mode-splitting ratio of a fabry-perot MEMS acceleration-sensitive chip according to claim 1, characterized in that the MEMS spring-mass structure (12) is made of an SOI wafer.
6. The structure for improving the mode separation ratio of the fabry-perot MEMS acceleration sensitive chip according to claim 5, wherein the double-layered supporting beam includes a plurality of L-shaped micro beams, the number of the plurality of micro beams is an even number, the plurality of micro beams are divided into two groups, and the micro beams are arranged in a vertically symmetrical structure.
7. The structure for improving the mode-splitting ratio of a fabry-perot MEMS acceleration-sensitive chip as claimed in claim 6, characterized in that the thickness of the micro-beam is the same as the thickness of the device layer of the SOI wafer.
8. The structure for improving the mode separation ratio of the Fabry-Perot MEMS acceleration sensitive chip according to claim 1, characterized in that the MEMS spring mass structure (12) is processed by MEMS bulk silicon process.
9. The structure for improving the mode separation ratio of the Fabry-Perot MEMS acceleration sensitive chip according to claim 1, characterized in that a second groove (13) is arranged on one side of the supporting base (3) close to the movable mirror (2), and the second groove (13) is used for providing a moving space for the MEMS spring mass structure (12).
10. The structure for improving the mode separation ratio of the fabry-perot MEMS acceleration-sensitive chip according to claim 1, characterized in that the fixed mirror (1) and the supporting base (3) are connected to the ends of the double-layered supporting beam by bonding or gluing.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6581465B1 (en) * | 2001-03-14 | 2003-06-24 | The United States Of America As Represented By The Secretary Of The Navy | Micro-electro-mechanical systems ultra-sensitive accelerometer |
| CN101752141A (en) * | 2009-12-21 | 2010-06-23 | 西安电子科技大学 | A kind of flexion type acceleration switch |
| CN112433067A (en) * | 2020-11-16 | 2021-03-02 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Low-cross-axis crosstalk sensitive structure and manufacturing method thereof |
| CN112816737A (en) * | 2020-12-29 | 2021-05-18 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Accelerometer based on hemispherical FP (Fabry-Perot) cavity on-chip integrated optical machine and manufacturing method |
| CN213933915U (en) * | 2020-11-16 | 2021-08-10 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Sensitive structure of low cross axle crosstalk |
-
2022
- 2022-01-26 CN CN202210096472.6A patent/CN114414846A/en active Pending
Patent Citations (5)
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| US6581465B1 (en) * | 2001-03-14 | 2003-06-24 | The United States Of America As Represented By The Secretary Of The Navy | Micro-electro-mechanical systems ultra-sensitive accelerometer |
| CN101752141A (en) * | 2009-12-21 | 2010-06-23 | 西安电子科技大学 | A kind of flexion type acceleration switch |
| CN112433067A (en) * | 2020-11-16 | 2021-03-02 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Low-cross-axis crosstalk sensitive structure and manufacturing method thereof |
| CN213933915U (en) * | 2020-11-16 | 2021-08-10 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Sensitive structure of low cross axle crosstalk |
| CN112816737A (en) * | 2020-12-29 | 2021-05-18 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Accelerometer based on hemispherical FP (Fabry-Perot) cavity on-chip integrated optical machine and manufacturing method |
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