CN114414747B - Verification method for laser annealing uniformity - Google Patents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0095—Semiconductive materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a verification method of laser annealing uniformity, which is characterized in that a verification structure formed by stacking a semiconductor substrate, a thermal isolation film and a metal film is subjected to laser annealing under corresponding laser annealing conditions, at least part of the metal film is thermally melted in the laser annealing process, so that the surface appearance of the verification structure before and after annealing is changed, and further the uniformity of the laser annealing can be visually judged by observing and analyzing the surface appearance of the verification structure after annealing.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing processes, in particular to a verification method for laser annealing uniformity.
Background
Semiconductor devices are usually connected to external circuits, and gold half-contacts (i.e. contacts between metal and semiconductor, such as ohmic contacts) are indispensable, and the formation process is usually: after a metal film (such as nickel Ni and the like) is grown on the back surface or the front surface of a semiconductor substrate (such as silicon carbide SiC), annealing is carried out on the metal film by adopting a laser annealing process, and the instantaneous action of laser enables the contact temperature of the metal film and the semiconductor substrate to reach about 1000 ℃, so that the metal film irradiated by the laser is thermally melted and has a silicification reaction with the semiconductor substrate, and further a gold half-contact is formed.
Among them, the uniformity of laser annealing significantly affects the performance of the finally manufactured semiconductor device, and thus the yield of the whole wafer. Therefore, the uniformity of laser annealing needs to be verified. In the traditional method, after laser annealing is finished, the electrical characteristics of each device on a wafer are verified at a wafer end, so that the advantages and disadvantages of the laser annealing process are reflected through the device performance.
Disclosure of Invention
The invention aims to provide a verification method for laser annealing uniformity, which can shorten verification period and reduce verification cost.
In order to achieve the above object, the present invention provides a method for verifying uniformity of laser annealing, which comprises the following steps:
providing a semiconductor substrate, and sequentially laminating a thermal isolation film and a metal film on the semiconductor substrate to form a verification structure;
performing laser annealing on the verification structure from the metal film side by adopting corresponding laser annealing conditions, wherein in the laser annealing process, the thermal isolation film prevents heat of the laser annealing from being conducted to the semiconductor substrate, and at least part of the metal film is thermally melted;
and observing and analyzing the surface appearance of the annealed verification structure to judge the laser annealing uniformity.
Optionally, the material of the semiconductor substrate comprises silicon, silicon carbide, germanium or silicon-on-insulator.
Optionally, the thickness of the semiconductor substrate is 300-400 μm.
Optionally, the material of the thermal isolation film comprises an oxide and/or a nitride.
Optionally, the thickness of the thermal isolation film is 50 nm-2000 nm.
Optionally, the material of the metal film includes at least one of aluminum, copper, nickel, titanium, tantalum, cobalt, tungsten, molybdenum, manganese, niobium, and chromium.
Optionally, the thickness of the metal film is 50 nm-200 nm.
Optionally, a portion of the metal film melted by laser annealing forms a transparent-like structure.
Optionally, the surface morphology of the annealed verification structure presents a morphology with alternating bright and dark colors or a morphology with full dark colors, and when the degree of the appearance of the surface morphology of the annealed verification structure exceeds the requirement, it is determined that the laser annealing uniformity does not meet the requirement; and when the degree of appearance of the surface appearance of the annealed verification structure at intervals of light and dark does not exceed the requirement or shows a full-dark appearance, judging that the laser annealing uniformity meets the requirement.
Optionally, the laser annealing condition includes a laser energy density and an overlapping ratio of two adjacent annealing regions.
Compared with the prior art, the technical scheme of the invention has at least one of the following beneficial effects:
1. the verification structure formed by stacking the semiconductor substrate, the thermal isolation film and the metal film is provided, the verification structure is subjected to laser annealing under the condition of laser annealing to be verified, the metal film is at least partially melted in the laser annealing process, the surface appearance of the verification structure before and after annealing is changed, and then the uniformity of the laser annealing can be visually judged by observing and analyzing the surface appearance of the verification structure after annealing.
2. The uniformity of laser annealing does not need to be verified by verifying the electrical characteristics of the device, so that the verification period is shortened, and the verification cost is reduced.
Drawings
Fig. 1 is a flowchart of a method for verifying uniformity of laser annealing according to an embodiment of the present invention.
Fig. 2 to 5 are schematic cross-sectional views of the device structure in the verification method shown in fig. 1.
FIG. 6 is a scanning electron microscope image of a portion of the surface topography of the annealed verification structure obtained by actually applying the verification method of laser annealing uniformity of the present invention.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention. It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like reference numerals refer to like elements throughout. It will be understood that when an element is referred to as being "laminated to" other film layers, it can be formed directly on the surface of the other film layers, or intervening film layers may be present. In contrast, when a film layer is said to be "formed directly onto" the surface of other film layers, there are no intervening elements present. Although the terms "side" and the like may be used to describe various elements, components and/or sections, these elements, components and/or sections should not be limited by these terms. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
The technical solution proposed by the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Referring to fig. 1, an embodiment of the invention provides a method for verifying laser annealing uniformity, which includes the following steps:
s1, providing a semiconductor substrate, and sequentially laminating a thermal isolation film and a metal film on the semiconductor substrate to form a verification structure;
s2, performing laser annealing on the verification structure from the metal film side by adopting corresponding laser annealing conditions, wherein in the laser annealing process, the thermal isolation film blocks the heat of the laser annealing from being conducted to the semiconductor substrate, and at least part of the metal film is thermally melted;
and S3, observing and analyzing the annealed surface topography of the verification structure to judge the laser annealing uniformity.
Referring to fig. 2, in step S1, a semiconductor substrate 10 of any suitable material, such as a silicon, silicon carbide, germanium, or silicon-on-insulator wafer, is provided, the semiconductor substrate 10 may be heavily P-doped or heavily N-doped, and the thickness of the semiconductor substrate 10 is, for example, 300 μm to 400 μm; then, a thermal isolation film 11 may be formed on the surface of the semiconductor substrate 10 by using a suitable process such as thermal oxidation, thermal nitridation or chemical vapor deposition, where the thermal isolation film 11 may be a single-layer film or a stacked structure of multiple layers; next, a metal film 12 may be deposited on the surface of the thermal isolation film 11 by a physical vapor deposition or the like, and thus, the semiconductor substrate 10, the thermal isolation film 11, and the metal film 12 are sequentially stacked to form a desired verification structure, which may also be referred to as a monitor wafer.
Referring to fig. 3, in step S2, a laser is applied to the metal film 12 under the laser annealing condition to be verified, so as to perform laser annealing on the verified structure. In this step, since the temperature of the laser is very high, generally above 1000 ℃, the instant high temperature effect of the laser is utilized to melt at least a portion of the metal film 12, thereby changing the surface topography of the verification structure before and after annealing.
As an example, a step-and-scan (e.g., line-and-scan) method may be used to perform laser annealing on the corresponding region of the metal film 12, where the heat may generate a certain thermal accumulation effect along the scanning direction, and two adjacent annealing regions (i.e., two adjacent laser spots) may have corresponding overlapping rates to improve the thermal accumulation effect. At this time, the laser annealing conditions in step S2 include the laser energy density and the overlapping ratio of two adjacent annealed regions (i.e., the overlapping ratio of two adjacent laser spots).
Due to the heat accumulation effect, different heat accumulation effects may be generated in different regions of the metal film 12 according to the path of the laser scanning, and therefore, the uniformity of the laser annealing may be reflected on the surface topography of the annealed verification structure (i.e., the topography of the surface on the side where the metal film 12 is located). Therefore, referring to fig. 4 and 5, in step S3, the surface topography of the annealed verification structure (i.e., the topography of the surface on the side where the metal film 12 is located) can be directly observed and analyzed by a suitable observation and analysis instrument (e.g., a scanning electron microscope, etc.), so as to intuitively judge the uniformity of the laser annealing in step S2 according to the observed surface topography.
As an example, the metal film 12 before annealing is bright, the thermal isolation layer 11 is dark, and the portion of the metal film 12 melted in step S2 forms a transparent structure 12', so that in step S3, it is verified that the surface morphology of the structure after annealing can be alternately bright and dark or completely dark. Wherein, when the surface topography of the verified structure after annealing exhibits a topography with light and dark intervals exceeding the requirement by observation and analysis (including calculation of the area ratio of the light areas, etc.) (when, as shown in fig. 4, this indicates that the metal film 12 in some regions is annealed and melted to form a transparent structure 12' to exhibit the color (i.e., dark color) of the thermal isolation film 11 to form a dark region; and the metal film 12 in some regions is not annealed and melted to maintain a non-transparent structure 12 ″ (which may be in the form of spots or stripes) to exhibit the self color (i.e., light color) of the metal film 12 before annealing to form a light region; and the annealing uniformity in step S2 is required, when the total area of the light areas in the surface topography of the verified structure after annealing does not exceed 20% and therefore, when the total area of the light areas in the surface topography of the verified structure after annealing is obtained by observation and analysis in step S3 is greater than 20%, the unevenness of the laser annealing in step S2 is described, that is, it can be judged that the uniformity of the laser annealing in step S2 does not meet the requirement. When the surface morphology of the verified structure after annealing shows a completely dark morphology through observation and analysis in step S3, as shown in fig. 5, this indicates that the metal films 12 in the global region are all annealed and melted to form the transparent structure 12', so that the global surface shows the color of the thermal isolation film 11, at this time, the total area of the bright region in the surface morphology of the verified structure after annealing obtained through observation and analysis in step S3 is close to 0, which indicates that the laser annealing in step S2 is uniform, i.e., it can be determined that the laser annealing uniformity in step S2 meets the requirement. Of course, in practical application, in step S3, it is observed that in the appearance of the annealed surface of the verification structure, the bright regions are usually unevenly distributed, specifically, as shown in fig. 6, in the appearance of the annealed surface of the verification structure, the bright regions and the dark regions are roughly stripe structures in the appearance of the bright and dark regions obtained by scanning the annealed surface of the verification structure through a Scanning Electron Microscope (SEM) in practical application, but the bright stripes are not distributed at equal intervals, equal line widths, equal line lengths, and equal densities, and are distributed densely in some regions, some regions are sparse, some regions are longer, some regions are shorter, some regions are wider, and some regions are narrower, so that the appearance characteristics of the bright stripes can reflect whether the annealing uniformity meets the requirements. And when the surface morphology of the annealed verification structure in the step S3 shows the alternating bright and dark morphology which does not exceed the requirement (i.e. the total area of the bright areas in the surface morphology of the annealed verification structure is less than or equal to 20%) through observation and analysis, it can be determined that the uniformity of the laser annealing in the step S2 meets the requirement.
It should be understood that the greater the difference between the color of the metal film 12 before melting and the color of the metal film 12 after melting and the color of the thermal isolation film 11, respectively, the more obvious the color contrast or light-dark contrast in the surface morphology of the structure after annealing is, the more convenient for observation and analysis.
Therefore, the thickness and material selection of the thermal isolation film 11 can be appropriately selected according to the thickness and material of the metal film 12 to be formed subsequently and the laser annealing condition used in step S2, so that the thermal isolation film 11 can not only effectively conduct the heat of laser annealing to the semiconductor substrate 10, avoid the semiconductor substrate 10 from conducting away the heat of laser annealing to influence the melting of the metal film, but also ensure that the surface morphology of the annealed verification structure can be favorable for observation and analysis.
Preferably, the thermal isolation film 11 is made of a material that does not react with the metal of the metal film 12 in the laser annealing. For example, the material of the thermal isolation film 11 includes an oxide such as silicon oxide, aluminum oxide, a high-k dielectric having a dielectric constant k greater than 7 (e.g., hafnium oxide, etc.), and/or a nitride such as silicon nitride, titanium nitride, aluminum nitride, silicon oxide, and the like. The material of the metal film 12 may include at least one of aluminum, copper, nickel, titanium, tantalum, cobalt, tungsten, molybdenum, manganese, niobium, and chromium, and may be a single metal or an alloy.
Optionally, the thickness of the thermal isolation film 11 is 50nm to 2000 nm.
Optionally, the thickness of the metal film is 50 nm-200 nm.
It should be understood that in other embodiments of the invention, it is also possible to: other film layers are formed between the semiconductor substrate 10 and the thermal isolation film 11, other film layers are formed between the metal film 12 and the thermal isolation film 11, a heat conduction layer is formed on one side of the metal film 12 far away from the thermal isolation film 11, other film layers are formed on one side of the semiconductor substrate 10 far away from the thermal isolation film 11, and the like.
In addition, it should be noted that, in an actual application, the verification structure formed in step S1 may be a monitoring wafer, which may be fed into a laser annealing apparatus together with a silicon wafer for device fabrication, so as to monitor the uniformity of a laser annealing process (e.g., a laser annealing process for forming a gold half-contact or a metal silicide) for actual product device fabrication. In another practical application, a plurality of identical verification structures may be formed in step S1, and different laser annealing conditions are applied to each verification structure in step S2 until a laser annealing condition with satisfactory uniformity is selected for a laser annealing process (e.g., a laser annealing process for forming a gold half-contact or a metal silicide) used in actual product device fabrication, thereby ensuring the performance of the actual product device.
In summary, according to the verification method for laser annealing uniformity of the present invention, the verification structure is formed by stacking the semiconductor substrate, the thermal isolation film and the metal film, the laser annealing is performed on the verification structure under the condition of laser annealing to be verified, the metal film is at least partially melted in the laser annealing process, so that the surface morphologies of the verification structure after annealing are different, and further, the uniformity of the laser annealing can be visually judged by observing and analyzing the surface morphology of the verification structure after annealing.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art according to the above disclosure are within the scope of the present invention.
Claims (9)
1. A verification method for laser annealing uniformity is characterized by comprising the following steps:
providing a semiconductor substrate, and sequentially laminating a thermal isolation film and a metal film on the semiconductor substrate to form a verification structure, wherein the thermal isolation film is dark in color;
performing laser annealing on the verification structure from the metal film side by adopting corresponding laser annealing conditions, wherein in the laser annealing process, the thermal isolation film prevents heat of the laser annealing from being conducted to the semiconductor substrate, at least part of the metal film is thermally melted, the color of the metal film before annealing is bright, and the part of the metal film, which is melted by the laser annealing, forms a transparent structure;
and observing and analyzing the surface appearance of the annealed verification structure to judge the laser annealing uniformity.
2. The method for verifying laser annealing uniformity according to claim 1, wherein the material of the semiconductor substrate comprises silicon, silicon carbide, germanium, or silicon-on-insulator.
3. The method for verifying the uniformity of laser annealing according to claim 1, wherein the thickness of the semiconductor substrate is 300 μm to 400 μm.
4. The method for verifying laser annealing uniformity as claimed in claim 1, wherein the material of the thermal isolation film comprises an oxide and/or a nitride.
5. The method for verifying the uniformity of laser annealing according to claim 1, wherein the thickness of the thermal isolation film is 50nm to 2000 nm.
6. The method for verifying uniformity of laser annealing as claimed in claim 1, wherein a material of said metal film comprises at least one of aluminum, copper, nickel, titanium, tantalum, cobalt, tungsten, molybdenum, manganese, niobium, and chromium.
7. The method for verifying the uniformity of laser annealing according to claim 1, wherein the thickness of the metal film is 50nm to 200 nm.
8. The method for verifying the uniformity of laser annealing according to claim 1, wherein the surface topography of the verification structure after annealing is in a bright-dark alternating topography or a full-dark topography, and when the degree that the surface topography of the verification structure after annealing is in the bright-dark alternating topography exceeds the requirement, the uniformity of laser annealing is judged not to meet the requirement; and when the degree of appearance of the surface appearance of the annealed verification structure at intervals of light and dark does not exceed the requirement or shows a full-dark appearance, judging that the laser annealing uniformity meets the requirement.
9. The method for verifying laser annealing uniformity according to any one of claims 1 to 8, wherein the laser annealing conditions include laser fluence and an overlapping ratio of two adjacent annealing regions.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20090039302A (en) * | 2007-10-18 | 2009-04-22 | 주식회사 엘지화학 | Process for preparation of metal oxide-based transparent conductive thin film |
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