CN114397935B - High-voltage high-precision large-current piezoelectric ceramic constant-current driving circuit - Google Patents
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Abstract
A high-voltage high-precision large-current piezoelectric ceramic constant current driving circuit comprises: the device comprises a DSPIC30F5013 control circuit (101), a photoelectric isolation circuit I (102), a high-speed high-precision DA conversion circuit I (103), an OPA548 power amplifier circuit I (104), a piezoelectric ceramic charging driving power supply + VCC (105), a MOSFET power tube T1 (106), a photoelectric isolation circuit II (107), a high-speed high-precision DA conversion circuit II (108), an OPA548 power amplifier circuit II (109), a MOSFET power tube T2 (110), a piezoelectric ceramic discharging driving power supply-VEE (111), a current sensor (112), piezoelectric ceramic (113), a voltage divider resistor R1 (114), a sampling resistor R2 (115), a current signal conditioning circuit (116) and a voltage signal conditioning circuit (117); the high-voltage high-precision large-current piezoelectric ceramic constant-current driving circuit is scientific in structure, good in manufacturability and wide in popularization and application value.
Description
Technical Field
The invention provides a high-voltage high-precision large-current piezoelectric ceramic constant-current driving circuit, in particular relates to a high-voltage high-precision constant-current driving circuit for driving a piezoelectric ceramic micro-shifter, and belongs to the technical field of special power supplies.
Background
The inverse piezoelectric effect of the piezoelectric ceramic can be used for manufacturing a micro-displacement execution device, has the advantages of high resolution, small volume, quick response, large thrust and the like, and is widely applied to important fields of micro-displacement output devices, valve control, force generation devices, robots, impact motors, optical scanning and the like. With the wide application of piezoelectric ceramics and the increase of high-precision positioning requirements, higher requirements are also put forward on the piezoelectric ceramic driving power supply. At present, most piezoelectric ceramic drivers adopt a high-voltage operational amplifier to amplify the voltage amplitude and power of the control voltage of the piezoelectric ceramic, and the output of the high-voltage operational amplifier directly drives the piezoelectric ceramic, so that the piezoelectric ceramic driver has the advantage of high voltage control precision of the piezoelectric ceramic. However, the output power of the high-voltage operational amplifier is limited due to the self-dissipation power, and the maximum working voltage is determined by the high-voltage operational amplifier, so that the maximum working voltage cannot be flexibly adjusted.
The piezoelectric ceramic can be approximately equivalent to a capacitor, so that the piezoelectric ceramic can be linearly charged and discharged by adopting constant current source driving, the charging and discharging time and voltage can be well controlled, and the circuit has a simple structure and good stability. However, the output current and the voltage of the common constant current source driving power supply are relatively low. For a piezoelectric actuator with high mechanical performance, such as a stack type, due to its large capacitance (micro farad), in order to obtain high frequency response, the driving power source must be able to provide a large instantaneous charging and discharging current and a high driving voltage, which are difficult to be met by the existing driving power source based on a constant current source.
Disclosure of Invention
1. The purpose of the invention is as follows: the invention provides a high-voltage high-precision large-current piezoelectric ceramic constant current driving circuit based on the technologies of DSP digital processing, photoelectric isolation, high-precision digital-to-analog conversion, power amplification, MOSFET constant current amplification, digital closed-loop control and the like, and the high-voltage high-precision large-current piezoelectric ceramic constant current driving circuit not only can output large current of more than ten amperes and greatly improve the dynamic response characteristic of a system, but also can output voltage of hundreds of volts or even thousands of volts according to the voltage withstanding value of a selected MOSFET power tube, and simultaneously realizes the high-precision control of the charging and discharging current and voltage of piezoelectric ceramic through the digital closed-loop feedback regulation of the current and the voltage.
The "MOSFET" refers to: a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), which is referred to as a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET);
2. the technical scheme is as follows: the purpose of the invention is realized by the following technical scheme.
Based on the above purpose, the present invention provides a high-voltage high-precision large-current piezoelectric ceramic constant current driving circuit, which comprises: the device comprises a DSPIC30F5013 control circuit (101), a photoelectric isolation circuit I (102), a high-speed high-precision DA conversion circuit I (103), an OPA548 power discharge circuit I (104), a piezoelectric ceramic charging driving power supply + VCC (105), a MOSFET power tube T1 (106), a photoelectric isolation circuit II (107), a high-speed high-precision DA conversion circuit II (108), an OPA548 power discharge circuit II (109), a MOSFET power tube 22 (110), a piezoelectric ceramic discharging driving power supply-VEE (111), a current sensor (112), piezoelectric ceramic (113), a voltage dividing resistor R1 (114), a sampling resistor R2 (115), a current signal conditioning circuit (116) and a voltage signal conditioning circuit (117);
the "DSPIC30F5013" refers to: the model of the digital processing controller integrated circuit is a 16-bit single chip microcomputer controller;
the term "DA" refers to: digital signals (Digital) are converted into Analog signals (Analog), abbreviated to DA;
the OPA548 refers to: a model of an integrated power amplifier;
the + VCC refers to: a power supply with positive output voltage;
the VEE refers to: the power supply with negative output voltage;
the positional relationship between them is: the DSPIC30F5013 control circuit (101) outputs two paths of SPI serial communication signals, wherein the SPI serial communication signals are connected to a photoelectric isolation circuit I (102), signal isolation is achieved through photoelectric conversion, the isolated serial communication signals are connected to a high-speed high-precision DA conversion circuit I (103), and digital signals are converted into analog voltage signals V in1 Output of the signal V in1 Then the signal is input into an OPA548 power amplifier circuit I (104) for power amplification, the peak output current can reach 5A, and an amplified signal V d1 Then the power source is connected to a gate pole of the MOSFET power tube T1 (106) to realize the drive of the MOSFET power tube T1; similarly, the SPI serial communication signal II is connected to the photoelectric isolation circuit II (107), signal isolation is realized through photoelectric conversion, the isolated serial communication signal is connected to the high-speed high-precision DA conversion circuit II (108), and a digital signal is converted into an analog voltage signal V in2 Output of the signal V in2 Then the signal is input into an OPA548 power amplifier circuit II (109) for power amplification, the peak output current can reach 5A, and the amplified signal V d2 Then the power transistor is connected to a gate pole of the MOSFET power transistor T2 (110) to realize the drive of the MOSFET power transistor T2; the source of the MOSFET power transistor T1 (106) is connected to the drain of the MOSFET power transistor T2 (110), howeverThen the voltage is connected to the piezoelectric ceramic (113), the piezoelectric ceramic charging driving power supply + VCC (105) is connected to the drain electrode of the MOSFET power tube T1 (106), and the piezoelectric ceramic discharging driving power supply-VEE (111) is connected to the source electrode of the MOSFET power tube T2 (110); when the DSPIC30F5013 control circuit (101) controls the driving signal V d1 Making MOSFET power tube T1 (106) work in constant current amplification state and controlling drive signal V d2 =0 MOSFET power transistor T2 (110) is closed, piezoelectric ceramic charging driving power supply + VCC (105) charges piezoelectric ceramic (113) with constant current, and the magnitude of charging current is based on driving signal V d1 The size and the transfer characteristic curve of the MOSFET power tube T1 are determined; when the DSPIC30F5013 control circuit (101) controls the driving signal V d1 =0 MOSFET power transistor T1 (106) is turned off and drive signal V is controlled d2 The MOSFET power tube T2 (110) is enabled to work in a constant current amplification state, the piezoelectric ceramic (113) discharges the piezoelectric ceramic discharge driving power supply VEE (111) through the MOSFET power tube T2 for constant current discharge, and the discharge current is the driving signal V d2 The size and the transfer characteristic curve of the MOSFET power tube T2 are determined;
the "SPI" refers to: serial Peripheral Interface (Serial Peripheral Interface) which is a full-duplex synchronous Serial bus developed by Motorola (Motorola) corporation;
the current sensor (112) is connected in series in the piezoelectric ceramic charge-discharge circuit and is used for collecting the charge-discharge current value I of the piezoelectric ceramic f The current signal is connected to a current signal conditioning circuit (116), and the processed charge-discharge current signal I fAD Then connected to an AD conversion input port AD1 of a DSPIC30F5013 control circuit (101) for sampling charging and discharging current, and the DSP obtains the charging and discharging current I f Then, the driving voltage V of the MOSFET power tube T1 (106) can be adjusted in real time according to the internal program d1 And driving voltage V of MOSFET power transistor T2 (110) d2 Namely, high-precision constant-current charging and discharging of the piezoelectric ceramic (113) are realized through current digital closed-loop negative feedback; the divider resistor R1 (114) and the sampling resistor R2 (115) are connected in series and then connected in parallel at two ends of the piezoelectric ceramic (113) for collecting the voltage U at the two ends of the piezoelectric ceramic f The voltage signal conditioning circuit (117) processes the piezoelectric ceramic voltage signal U fAD Then connected to an AD conversion input port AD2 of a DSPIC30F5013 control circuit (101) for piezoelectric ceramic voltage sampling, and the DSP obtains the voltage U at two ends of the piezoelectric ceramic f Then, the MOSFET power tube T1 (106) and the MOSFET power tube T2 (110) can be closed in real time according to an internal program, namely, the charge-discharge voltage control of the piezoelectric ceramic (113) is realized through voltage digital closed-loop negative feedback;
the term "AD" refers to: the Analog signal (Analog) is converted into a Digital signal (Digital), abbreviated AD;
the "DSP" refers to: digital Signal Processing, which is an abbreviation of english Digital Signal Processing;
the term "AD1" refers to: an AD conversion input port of the DSPIC30F5013 controller;
the term "AD2" refers to: another AD conversion input port of the DSPIC30F5013 controller;
the DSPIC30F5013 control circuit (101) mainly comprises a DSPIC30F5013 high-performance digital signal controller of MICROCHIP company and peripheral circuits thereof, and mainly has the functions of regulating gate driving voltages of an MOSFET power tube T1 (106) and an MOSFET power tube T2 (110) through two SPI serial communication interfaces, so that the control of piezoelectric ceramic charging and discharging current is realized;
the "MICROCHIP company" refers to: american Microchip technology, inc., which stands in 1989 and is a leading monolithic processor and analog semiconductor supplier in the United states;
the photoelectric isolation circuit I (102) and the photoelectric isolation circuit II (107) are identical in structure and are composed of three groups of identical photoelectric isolation units, and photoelectric isolation of SPI serial communication signals is achieved together; each group of photoelectric isolation units comprises a photoelectric isolation integrated circuit 6N137 (201), a photoelectric isolation current-limiting resistor R1 (202), an output pull-up resistor R4 (203), a pull-up resistor R5 (204) of a transistor Q1 and a transistor Q1 (205), and has the functions of isolating digital signals of SPI serial communication in a photoelectric coupling mode, realizing isolation transmission of digital signals at a low-voltage end and an end, and finally realizing constant current driving of MOSFET power tubes T1 and T2 at a high-voltage end;
the 6N137 refers to: the model of a photoelectric isolation integrated circuit;
high-speed high accuracy DA converting circuit I (103) and high-speed high accuracy DA converting circuit II (108) the same structure, all adopt DAC8560 converting circuit, DAC8560 is a section low-power consumption, voltage output, single channel, 16-bit, 3-wire system serial DA converting circuit, serial communication rate 30MHz, can realize DA output voltage's quick setting, the main function is that the SPI serial communication signal who comes the transmission of optoelectronic isolation circuit I (102) and optoelectronic isolation circuit II (107) converts analog voltage signal V into in1 And V in2 Outputting;
the DAC8560 refers to: the model of an SPI serial communication integrated circuit, DAC8560 is a low-power consumption, voltage output, single channel, 16-bit, 3-wire system serial DA converting circuit, the integrated circuit of the serial communication rate 30 MHz;
the OPA548 power amplification circuit I (104) and the OPA548 power amplification circuit II (109) have the same structure, comprise an integrated power amplifier OPA548 (301), an input resistor R6 (302), a proportional amplification resistor R7 (303), a feedback resistor R8 (304) and an enabling resistor R9 (305), and mainly have the function of forming an analog voltage signal V to be input by the power amplification circuit in1 And V in2 Amplifying and converting into V d1 And V d2 The power supply circuit amplifies voltage and driving current and is connected to the MOSFET power tube T1 (106) and the MOSFET power tube T2 (110);
the MOSFET power tube T1 (106) and the MOSFET power tube T2 (110) adopt a FAIRCHILD FDA38N30N channel MOSFET, the highest withstand voltage value is 300V, the maximum output current is 38A, and the requirements of piezoelectric ceramic working voltage (generally less than 200V) and driving current (generally less than 20A) can be met;
the "FAIRCHILD company" refers to: fairchild Semiconductor corporation (Fairchild Semiconductor), once the world's largest, most creative, and exciting Semiconductor manufacturing enterprise;
the piezoelectric ceramic charging driving power supply + VCC (105) adopts a universal AC/DC switching power supply, the output voltage can be determined according to the working voltage of the piezoelectric ceramic, for example, the working voltage of the piezoelectric ceramic is +150V, and the charging driving power supply can select a direct current power supply with the height of 30-50V, for example, +200V;
the "AC/DC switching power supply" refers to: the power supply is one of switching power supplies, wherein AC is alternating current, DC is direct current, and the power supply converts alternating voltage into direct current voltage for output;
the piezoelectric ceramic discharge driving power supply-VEE (111) adopts a general AC/DC switching power supply, and the output voltage is generally-24V to-30V;
the Hall current sensor (112) adopts an ACS712 Hall current sensor integrated circuit of ALLEGRO company, and has the main function of being connected in series in a piezoelectric ceramic charge-discharge circuit to collect charge-discharge current;
the "ALLEGRO company" refers to: a rapid micro corporation in the united states, a leading power integrated circuit supplier;
the "ACS712" refers to: the model of an open-loop current Hall sensor integrated circuit is used for realizing isolated sampling of current;
the piezoelectric ceramics (113) are stacked piezoelectric ceramics, and mainly have the function of converting voltages applied to two ends of the piezoelectric ceramics into the displacement of the piezoelectric ceramics by utilizing the piezoelectric effect;
the current signal conditioning circuit (116) mainly comprises an operational amplifier, a resistor and a capacitor and mainly has the function of feeding back a current signal I fed back by the Hall current sensor (112) f Amplifying and filtering, and then connecting to an AD1 input port of a DSPIC30F5013 control circuit (101) for digital conversion;
the voltage signal conditioning circuit (117) mainly comprises an operational amplifier, a resistor and a capacitor, and mainly has the function of feeding back a voltage signal U from the voltage dividing resistor R1 (114) and the sampling resistor R2 (115) f Amplifying and filtering, and then connecting to an AD2 input port of a DSPIC30F5013 control circuit (101) for digital conversion;
the operational amplifier, the resistor and the capacitor are all universal resistors and capacitors.
3. The advantages and the effects are as follows:
(1) Based on the transfer characteristic curve and the constant current amplification characteristic of the MOSFET, the high-precision large-current piezoelectric ceramic constant current driving circuit is designed by adopting a DSP digital control circuit, a photoelectric isolation circuit, a high-speed high-precision DA conversion circuit and an OPA548 power amplification circuit, so that the constant current and large current output of dozens of amperes can be realized, and the dynamic response characteristic of piezoelectric ceramic control is greatly improved;
(2) The high-precision large-current piezoelectric ceramic constant-current driving circuit provided by the invention can select the response MOSFET according to the driving voltage of the piezoelectric ceramic, thereby realizing the driving voltage of hundreds of volts or even thousands of volts;
(3) According to the invention, the high-speed SPI serial DA conversion circuit is adopted, the communication speed can reach 30M, and the setting time of digital-to-analog conversion is 10us, so that us-level dynamic charging and discharging current can be realized, conditions are provided for real-time adjustment of the charging and discharging current in the charging and discharging process of the piezoelectric ceramic, multiple sections of different charging and discharging currents can be set according to actual control requirements in one charging and discharging process, and the flexibility of voltage control of the piezoelectric ceramic is greatly improved;
(4) According to the transfer characteristic curve of the MOSFET, when the charging and discharging voltage of the piezoelectric ceramic reaches a set value, the driving voltage of the MOSFET power tube is set to be zero, so that the current of the MOSFET is completely cut off, and the aim of reducing the static power consumption of the constant current driving circuit is fulfilled;
(5) The high-voltage high-precision large-current piezoelectric ceramic constant-current driving circuit is scientific in structure, good in manufacturability and wide in popularization and application value.
Drawings
Fig. 1 is a schematic diagram of the operation of the high-voltage high-precision large-current piezoelectric ceramic constant current driving circuit of the present invention.
FIG. 2 is a schematic diagram of a photoelectric isolation circuit according to the present invention.
FIG. 3 is a schematic diagram of an OPA548 power amplifier circuit of the present invention.
Fig. 4 is a schematic diagram of transfer characteristics of a MOSFET power transistor used in the present invention.
FIG. 5 is a schematic diagram of the charge and discharge current and voltage of piezoelectric ceramic under different constant current driving conditions.
The reference numbers in the figures are illustrated as follows:
101 is a DSPIC30F5013 control circuit;
102 is a photoelectric isolation circuit I;
103 is a high-speed high-precision DA conversion circuit I;
104 is an OPA548 power amplifier circuit I;
105 is a piezoelectric ceramic charging driving power supply + VCC;
106 is a MOSFET power tube T1;
107 is a photoelectric isolation circuit II;
108 is a high-speed high-precision DA conversion circuit II;
109 is an OPA548 power amplifier circuit II;
110 is MOSFET power tube T2;
111 is a piezoelectric ceramic discharge driving power supply-VEE;
112 is a current sensor;
113 is piezoelectric ceramic;
114 is a voltage dividing resistor R1;
115 is a sampling resistor R2;
116 is a current signal conditioning circuit;
117 is a voltage signal conditioning circuit;
201 is a photo-electric isolation integrated circuit 6N137;
202 is a photoelectric isolation current limiting resistor R1;
203 is a pull-up resistor R4 of the photoelectric isolation output transistor;
204 is pull-up resistor R5 of transistor Q1;
205 an amplifying transistor Q1;
301 is an integrated power amplifier OPA548;
302 is input resistance R6;
303 is a proportional amplifying resistor R7;
304 is a feedback resistor R8;
305 is an enable resistor R9;
the resistor and the capacitor are both universal resistors and capacitors.
Detailed Description
The invention provides a high-voltage high-precision large-current piezoelectric ceramic constant-current driving circuit, which has the specific implementation mode that:
the high-voltage high-precision large-current piezoelectric ceramic constant current driving circuit comprises:
referring to fig. 1, a DSPIC30F5013 control circuit (101), a photoelectric isolation circuit i (102), a high-speed high-precision DA conversion circuit i (103), an OPA548 power amplifier circuit i (104), a piezoelectric ceramic charging driving power supply + VCC (105), a MOSFET power tube T1 (106), a photoelectric isolation circuit ii (107), a high-speed high-precision DA conversion circuit ii (108), an OPA548 power amplifier circuit ii (109), a MOSFET power tube T2 (110), a piezoelectric ceramic discharging driving power supply-VEE (111), a current sensor (112), piezoelectric ceramic (113), a voltage dividing resistor R1 (114), a sampling resistor R2 (115), a current signal conditioning circuit (116), and a voltage signal conditioning circuit (117); the positional relationship between them is: the DSPIC30F5013 control circuit (101) outputs two paths of SPI serial communication signals, wherein the SPI serial communication signals are connected to a photoelectric isolation circuit I (102), signal isolation is achieved through photoelectric conversion, the isolated serial communication signals are connected to a high-speed high-precision DA conversion circuit I (103), and digital signals are converted into analog voltage signals V in1 Output of the signal V in1 Then the signal is input into an OPA548 power amplifier circuit I (104) for power amplification, the peak output current can reach 5A, and an amplified signal V d1 Then the power source is connected to a gate pole of the MOSFET power tube T1 (106) to realize the drive of the MOSFET power tube T1; similarly, the SPI serial communication II signal is connected to the photoelectric isolation circuit II (107), signal isolation is realized through photoelectric conversion, the isolated serial communication signal is connected to the high-speed high-precision DA conversion circuit II (108), and a digital signal is converted into an analog voltage signal V in2 Output of the signal V in2 Then the signal is input into an OPA548 power amplifier circuit II (109) for power amplification, the peak output current can reach 5A, and the amplified signal V d2 Then the power transistor is connected to a gate pole of the MOSFET power transistor T2 (110) to realize the drive of the MOSFET power transistor T2; the source electrode of the MOSFET power tube T1 (106) is connected with the drain electrode of the MOSFET power tube T2 (110) and then is connected to the piezoelectric ceramic (113), the piezoelectric ceramic charging driving power supply + VCC (105) is connected to the drain electrode of the MOSFET power tube T1 (106), and the piezoelectric ceramic discharging driving power supply-VEE (1)11 Connected to the source of the MOSFET power transistor T2 (110); when the DSPIC30F5013 control circuit (101) controls the driving signal V d1 Making MOSFET power tube T1 (106) work in constant current amplification state and controlling drive signal V d2 =0 MOSFET power transistor T2 (110) is closed, piezoelectric ceramic charging driving power supply + VCC (105) charges piezoelectric ceramic (113) with constant current, and the magnitude of charging current is based on driving signal V d1 The size and the transfer characteristic curve of the MOSFET power tube T1 are determined; when the DSPIC30F5013 control circuit (101) controls the driving signal V d1 =0 MOSFET power transistor T1 (106) is turned off and drive signal V is controlled d2 The MOSFET power tube T2 (110) is enabled to work in a constant current amplification state, the piezoelectric ceramic (113) discharges the piezoelectric ceramic discharge driving power supply VEE (111) through the MOSFET power tube T2 for constant current discharge, and the magnitude of the discharge current is determined by the driving signal V d2 The size and the transfer characteristic curve of the MOSFET power tube T2 are determined; the current sensor (112) is connected in series in the piezoelectric ceramic charge-discharge circuit and is used for collecting the charge-discharge current value I of the piezoelectric ceramic f The current signal is connected to a current signal conditioning circuit (116), and the processed charge-discharge current signal I fAD Then connected to the AD conversion input port AD1 of the DSPIC30F5013 control circuit (101) for sampling the charging and discharging current, and the DSP obtains the charging and discharging current I f Then the driving voltage V of the MOSFET power tube T1 (106) can be adjusted in real time according to the internal program d1 And a driving voltage V of the MOSFET power transistor T2 (110) d2 Namely, high-precision constant-current charging and discharging of the piezoelectric ceramic (113) are realized through current digital closed-loop negative feedback; the divider resistor R1 (114) and the sampling resistor R2 (115) are connected in series and then connected in parallel at two ends of the piezoelectric ceramic (113) for collecting the voltage U at the two ends of the piezoelectric ceramic f The voltage signal conditioning circuit (117) processes the piezoelectric ceramic voltage signal U fAD Then connected to an AD conversion input port AD2 of a DSPIC30F5013 control circuit (101) for piezoelectric ceramic voltage sampling, and the DSP obtains the voltage U at two ends of the piezoelectric ceramic f Then, the MOSFET power tube T1 (106) and the MOSFET power tube T2 (110) can be closed in real time according to an internal program, namely, the charge and discharge voltage control of the piezoelectric ceramic (113) is realized through voltage digital closed-loop negative feedback;
as shown in fig. 2, the photoelectric isolation circuit i (102) and the photoelectric isolation circuit ii (107) have the same structure, and are both composed of three groups of the same photoelectric isolation units, so as to realize photoelectric isolation of the SPI serial communication signal; each group of photoelectric isolation units comprises a photoelectric isolation integrated circuit 6N137 (201), a photoelectric isolation current-limiting resistor R1 (202), an output pull-up resistor R4 (203), a pull-up resistor R5 (204) of a transistor Q1 and a transistor Q1 (205), and has the functions of isolating digital signals of SPI serial communication in a photoelectric coupling mode, realizing isolation transmission of digital signals at a low-voltage end and an end, and finally realizing constant current driving of MOSFET power tubes T1 and T2 at a high-voltage end;
referring to fig. 3, the OPA548 power amplifier circuit i (104) and the OPA548 power amplifier circuit ii (109) have the same structure, and include an integrated power amplifier OPA548 (301), an input resistor R6 (302), a proportional amplifying resistor R7 (303), a feedback resistor R8 (304), and an enable resistor R9 (305), and mainly function to constitute an analog voltage signal V to be input by the power amplifier circuit in1 And V in2 Amplifying and converting into V d1 And V d2 The amplification of voltage and driving current is realized, the peak output current can reach 5A d1 And V d2 Then the piezoelectric ceramic is respectively connected to an MOSFET power tube T1 (106) and an MOSFET power tube T2 (110) to realize the control of the charging and discharging current of the piezoelectric ceramic;
referring to fig. 4, which is a schematic diagram illustrating transfer characteristic curves of the MOSFET power transistor T1 (106) and the MOSFET power transistor T2 (110) according to the present invention, the MOSFET power transistor T1 (106) and the MOSFET power transistor T2 (110) both use an N-channel MOSFET FDA38N30; the threshold voltage of the FDA38N30 power tube is about +4V, and the gate drive voltage V GS (i.e., V) d1 And V d2 ) When the voltage changes from +4V to +6V, the drain current I of the MOSFET power tube D Varies approximately linearly from 0 to 13A, and V GS And I D Have a one-to-one correspondence; therefore, the gate driving voltage V is controlled by the MOSFET power transistor T1 (106) and the MOSFET power transistor T2 (110) d1 And V d2 The adjustment of the charge and discharge current of the piezoelectric ceramics can be realized;
referring to FIG. 5, the method is obtained when the piezoelectric ceramic is charged and discharged by different charging and discharging currentsThe voltage variation curve of the piezoelectric ceramic is shown schematically, and the current values I are respectively adopted in the charging stage C2 And I C2 Charging the piezoelectric ceramic (113), I C2 ＞I C1 Therefore, the voltage rising rate is increased in the later period of charging; using current value I in discharge phase D1 Discharging the piezoelectric ceramic (113) to linearly reduce the voltage;
the high-voltage high-precision large-current piezoelectric ceramic constant-current driving circuit can realize the output of constant current and large current of more than ten amperes, and greatly improves the dynamic response characteristic of piezoelectric ceramic control;
the high-voltage high-precision large-current piezoelectric ceramic constant-current driving circuit can select a response MOSFET according to the driving voltage of the piezoelectric ceramic, so that the driving voltage of hundreds of volts or even thousands of volts is realized;
the high-voltage high-precision large-current piezoelectric ceramic constant-current driving circuit adopts a high-speed SPI (serial peripheral interface) serial DA (digital-to-analog) conversion circuit, us-level dynamic charging and discharging current regulation can be realized, multiple sections of different charging and discharging currents can be set according to actual control requirements in a charging and discharging process, and the flexibility of piezoelectric ceramic voltage control is greatly improved;
the high-precision large-current piezoelectric ceramic constant current driving circuit completely cuts off the current of the MOSFET by setting the driving voltage of the MOSFET power tube to be zero, thereby achieving the purpose of reducing the static power consumption of the constant current driving circuit;
aiming at the piezoelectric ceramics with high mechanical property and large capacitance value, the invention provides a high-voltage high-precision large-current piezoelectric ceramics constant current driving circuit based on the technologies of DSP digital processing, photoelectric isolation, high-precision digital-to-analog conversion, power amplification, MOSFET constant current amplification, digital closed-loop control and the like, aiming at the problems of low dynamic response speed and the like when a small-current constant current power supply is adopted for driving, the constant current driving circuit can realize the constant current large current output of more than ten amperes, and greatly improves the dynamic response characteristic of piezoelectric ceramics control; the response MOSFET can be selected according to the driving voltage of the piezoelectric ceramic, so that the driving voltage of hundreds of volts or even thousands of volts is realized; the high-speed SPI serial DA conversion circuit is adopted, us-level dynamic charging and discharging current regulation can be realized, multiple sections of different charging and discharging currents can be set according to actual control requirements in a charging and discharging process, and the flexibility of piezoelectric ceramic voltage control is greatly improved; the driving voltage of the MOSFET power tube is set to be zero, so that the current of the MOSFET is completely cut off, and the aim of reducing the static power consumption of the constant current driving circuit is fulfilled.
The device comprises a DSPIC30F5013 control circuit (101), a photoelectric isolation circuit I (102), a high-speed high-precision DA conversion circuit I (103), an OPA548 power discharge circuit I (104), a piezoelectric ceramic charging driving power supply + VCC (105), a MOSFET power tube T1 (106), a photoelectric isolation circuit II (107), a high-speed high-precision DA conversion circuit II (108), an OPA548 power discharge circuit II (109), a MOSFET power tube T2 (110), a piezoelectric ceramic discharging driving power supply-VEE (111), a current sensor (112), piezoelectric ceramic (113), a voltage divider resistor R1 (114), a sampling resistor R2 (115), a current signal conditioning circuit (116) and a voltage signal conditioning circuit (117);
the DSPIC30F5013 control circuit (101) mainly comprises a DSPIC30F5013 high-performance digital signal controller and peripheral circuits thereof of MICROCHIP company. The DSPIC30F5013 control circuit (101) outputs two paths of SPI serial communication I signals and SPI serial communication II signals which are respectively connected to the photoelectric isolation circuit I (102) and the photoelectric isolation circuit II (107);
the SPI serial communication I signal output by the DSPIC30F5013 control circuit (101) is connected to the photoelectric isolation circuit I (102), signal isolation is realized through photoelectric conversion, the isolated serial communication signal is connected to the high-speed high-precision DA conversion circuit I (103), and a digital signal is converted into an analog voltage signal V in1 Output of the signal V in1 Then the signal is input into an OPA548 power amplifier circuit I (104) for power amplification, the peak output current can reach 5A, and an amplified signal V d1 Then the power source is connected to a gate pole of the MOSFET power tube T1 (106) to realize the drive of the MOSFET power tube T1; similarly, the SPI serial communication signal II is connected to the photoelectric isolation circuit II (107), signal isolation is realized through photoelectric conversion, the isolated serial communication signal is connected to the high-speed high-precision DA conversion circuit II (108), and a digital signal is converted into an analog voltage signal V in2 Output of the signal V in2 Then input into OPA548 power amplifier circuit II (109)) Power amplification is carried out, the peak output current can reach 5A, and the amplified signal V d2 Then the power transistor is connected to a gate pole of the MOSFET power transistor T2 (110) to realize the drive of the MOSFET power transistor T2; the source electrode of the MOSFET power tube T1 (106) is connected with the drain electrode of the MOSFET power tube T2 (110) and then is connected to the piezoelectric ceramic (113), the piezoelectric ceramic charging driving power supply + VCC (105) is connected to the drain electrode of the MOSFET power tube T1 (106), and the piezoelectric ceramic discharging driving power supply-VEE (111) is connected to the source electrode of the MOSFET power tube T2 (110); when the DSPIC30F5013 control circuit (101) controls the driving signal V d1 Making MOSFET power tube T1 (106) work in constant current amplification state and controlling drive signal V d2 =0 MOSFET power tube T2 (110) is closed, piezoelectric ceramic charging drive power supply + VCC (105) carries out constant current charging on piezoelectric ceramic (113), and the magnitude of charging current is driven by drive signal V d1 The size and the transfer characteristic curve of the MOSFET power tube T1 are determined; when the DSPIC30F5013 control circuit (101) controls the driving signal V d1 =0 turn off the MOSFET power transistor T1 (106), and control the driving signal V d2 The MOSFET power tube T2 (110) is enabled to work in a constant current amplification state, the piezoelectric ceramic (113) discharges the piezoelectric ceramic discharge driving power supply VEE (111) through the MOSFET power tube T2 for constant current discharge, and the magnitude of the discharge current is determined by the driving signal V d2 The size and the transfer characteristic curve of the MOSFET power tube T2 are determined;
the current sensor (112) is connected in series in the piezoelectric ceramic charge-discharge circuit and is used for collecting the charge-discharge current value I of the piezoelectric ceramic f The current signal is connected to a current signal conditioning circuit (116), and the processed charge-discharge current signal I fAD Then connected to an AD conversion input port AD1 of a DSPIC30F5013 control circuit (101) for sampling charging and discharging current, and the DSP obtains the charging and discharging current I f Then the driving voltage V of the MOSFET power tube T1 (106) can be adjusted in real time according to the internal program d1 And a driving voltage V of the MOSFET power transistor T2 (110) d2 Namely, the high-precision constant-current charging and discharging of the piezoelectric ceramic (113) are realized through the current digital closed-loop negative feedback; the divider resistor R1 (114) and the sampling resistor R2 (115) are connected in series and then connected in parallel at two ends of the piezoelectric ceramics (113) for collecting the voltage U at the two ends of the piezoelectric ceramics f The voltage signal conditioning circuit (117) passing throughProcessed piezoelectric ceramic voltage signal U fAD Then connected to an AD conversion input port AD2 of a DSPIC30F5013 control circuit (101) for piezoelectric ceramic voltage sampling, and the DSP obtains the voltage U at two ends of the piezoelectric ceramic f Then, the MOSFET power tube T1 (106) and the MOSFET power tube T2 (110) can be closed in real time according to an internal program, namely, the charge and discharge voltage control of the piezoelectric ceramic (113) is realized through voltage digital closed-loop negative feedback;
the photoelectric isolation circuit I (102) and the photoelectric isolation circuit II (107) are identical in structure and are composed of three groups of identical photoelectric isolation units, and photoelectric isolation of SPI serial communication signals is achieved together; each group of photoelectric isolation units comprises a photoelectric isolation integrated circuit 6N137 (201), a photoelectric isolation current-limiting resistor R1 (202), an output pull-up resistor R4 (203), a pull-up resistor R5 (204) of a transistor Q1 and a transistor Q1 (205), digital signals of SPI serial communication are isolated in a photoelectric coupling mode, isolation transmission of digital signals at a low-voltage end and an end is realized, and constant current driving of MOSFET power tubes T1 and T2 at a high-voltage end is finally realized;
the high-speed high-precision DA conversion circuit I (103) and the high-speed high-precision DA conversion circuit II (108) have the same structure, and adopt DAC8560 conversion circuits of BB company to convert SPI serial communication signals transmitted by the photoelectric isolation circuit I (102) and the photoelectric isolation circuit II (107) into analog voltage signals V in1 And V in2 Outputting;
the OPA548 power amplification circuit I (104) and the OPA548 power amplification circuit II (109) have the same structure, and comprise an integrated power amplifier OPA548 (301), an input resistor R6 (302), a proportional amplification resistor R7 (303), a feedback resistor R8 (304) and an enabling resistor R9 (305), wherein an input analog voltage signal V is input in1 And V in2 Amplifying and converting into V d1 And V d2 The amplifier realizes the amplification of voltage and driving current and is connected to the MOSFET power tube T1 (106) and the MOSFET power tube T2 (110) to control the charging and discharging current of the piezoelectric ceramics;
the MOSFET power tube T1 (106) and the MOSFET power tube T2 (110) adopt FAIRCHILD company FDA38N30N channel MOSFET to realize the charge-discharge current control of the piezoelectric ceramics;
the piezoelectric ceramic charging driving power supply + VCC (105) adopts a universal AC/DC switching power supply to provide charging current for the piezoelectric ceramic;
the piezoelectric ceramic discharge driving power supply-VEE (111) adopts a general AC/DC switching power supply to provide discharge current for the piezoelectric ceramic;
the Hall current sensor (112) adopts an ACS712 Hall current sensor integrated circuit of ALLEGRO company and is connected in series in the piezoelectric ceramic charge-discharge circuit to collect charge-discharge current;
the piezoelectric ceramics (113) are stacked piezoelectric ceramics, and the voltage applied to two ends of the piezoelectric ceramics is converted into the displacement of the piezoelectric ceramics by utilizing the piezoelectric effect;
the current signal conditioning circuit (116) mainly comprises an operational amplifier, a resistor and a capacitor, and is used for conditioning a current signal I fed back by the Hall current sensor (112) f Amplifying and filtering, and then connecting to an AD1 input port of a DSPIC30F5013 control circuit (101) for digital conversion;
the voltage signal conditioning circuit (117) mainly comprises an operational amplifier, a resistor and a capacitor, and feeds back a voltage signal U from the voltage dividing resistor R1 (114) and the sampling resistor R2 (115) f Amplifying and filtering are carried out, and then the digital conversion is carried out by connecting the digital conversion circuit to an AD2 input port of a DSPIC30F5013 control circuit (101).
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a high-voltage high-precision large-current piezoceramic constant-current driving circuit, which comprises a DSPIC30F5013 control circuit (101), a photoelectric isolation circuit I (102), a high-speed high-precision DA conversion circuit I (103), an OPA548 power discharge circuit I (104), a piezoceramic charging driving power supply + VCC (105), a MOSFET power tube T1 (106), a photoelectric isolation circuit II (107), a high-speed high-precision DA conversion circuit II (108), an OPA548 power discharge circuit II (109), a MOSFET power tube T2 (110), a piezoceramic discharging driving power supply-VEE (111), a current sensor (112), piezoceramics (113), a voltage dividing resistor R1 (114), a sampling resistor R2 (115), a current signal conditioning circuit (116) and a voltage signal conditioning circuit (117);
referring to fig. 1, the control circuit (101) of dspic30f5013 outputs two paths of SPI serial communication signals, wherein the SPI serial communication i signal is connected to the optoelectronic isolation circuit i (102) through lightThe signal isolation is realized by the electric conversion, the isolated serial communication signal is connected to a high-speed high-precision DA conversion circuit I (103) again, and a digital signal is converted into an analog voltage signal V in1 Output of the signal V in1 Then the signal is input into an OPA548 power amplifier circuit I (104) for power amplification, the peak output current can reach 5A, and an amplified signal V d1 Then the power source is connected to a gate pole of the MOSFET power tube T1 (106) to realize the drive of the MOSFET power tube T1; similarly, the SPI serial communication signal II is connected to the photoelectric isolation circuit II (107), signal isolation is realized through photoelectric conversion, the isolated serial communication signal is connected to the high-speed high-precision DA conversion circuit II (108), and a digital signal is converted into an analog voltage signal V in2 Output of the signal V in2 Then the signal is input into an OPA548 power amplifier circuit II (109) for power amplification, the peak output current can reach 5A, and the amplified signal V d2 Then the power source is connected to a gate pole of the MOSFET power tube T2 (110) to realize the drive of the MOSFET power tube T2; the source electrode of the MOSFET power tube T1 (106) is connected with the drain electrode of the MOSFET power tube T2 (110) and then is connected to the piezoelectric ceramic (113), the piezoelectric ceramic charging driving power supply + VCC (105) is connected to the drain electrode of the MOSFET power tube T1 (106), and the piezoelectric ceramic discharging driving power supply-VEE (111) is connected to the source electrode of the MOSFET power tube T2 (110); when the DSPIC30F5013 control circuit (101) controls the driving signal V d1 Making MOSFET power tube T1 (106) work in constant current amplification state and controlling drive signal V d2 =0 MOSFET power transistor T2 (110) is closed, piezoelectric ceramic charging driving power supply + VCC (105) charges piezoelectric ceramic (113) with constant current, and the magnitude of charging current is based on driving signal V d1 The size and the transfer characteristic curve of the MOSFET power tube T1 are determined; when the DSPIC30F5013 control circuit (101) controls the driving signal V d1 =0 MOSFET power transistor T1 (106) is turned off and drive signal V is controlled d2 The MOSFET power tube T2 (110) is enabled to work in a constant current amplification state, the piezoelectric ceramic (113) discharges the piezoelectric ceramic discharge driving power supply VEE (111) through the MOSFET power tube T2 for constant current discharge, and the magnitude of the discharge current is determined by the driving signal V d2 The size and the transfer characteristic curve of the MOSFET power tube T2 are determined;
the current sensor (112) is connected in series in the piezoelectric ceramic charge-discharge circuit forCollecting charge and discharge current value I of piezoelectric ceramic f The current signal is connected to a current signal conditioning circuit (116), and the processed charge-discharge current signal I fAD Then connected to the AD conversion input port AD1 of the DSPIC30F5013 control circuit (101) for sampling the charging and discharging current, and the DSP obtains the charging and discharging current I f Then the driving voltage V of the MOSFET power tube T1 (106) can be adjusted in real time according to the internal program d1 And driving voltage V of MOSFET power transistor T2 (110) d2 Namely, the high-precision constant-current charging and discharging of the piezoelectric ceramic (113) are realized through the current digital closed-loop negative feedback; the divider resistor R1 (114) and the sampling resistor R2 (115) are connected in series and then connected in parallel at two ends of the piezoelectric ceramic (113) for collecting the voltage U at the two ends of the piezoelectric ceramic f The voltage signal conditioning circuit (117) processes the piezoelectric ceramic voltage signal U fAD Then connected to an AD conversion input port AD2 of a DSPIC30F5013 control circuit (101) to sample the voltage of the piezoelectric ceramics, and the DSP obtains the voltage U at two ends of the piezoelectric ceramics f Then, the MOSFET power tube T1 (106) and the MOSFET power tube T2 (110) can be closed in real time according to an internal program, namely, the charge and discharge voltage control of the piezoelectric ceramic (113) is realized through voltage digital closed-loop negative feedback;
FIG. 2 is a photoelectric isolation circuit, which is composed of three sets of identical photoelectric isolation units, and which together implement photoelectric isolation of three SPI serial communication signals; each group of photoelectric isolation units comprises a photoelectric isolation integrated circuit 6N137 (201), a photoelectric isolation current-limiting resistor R1 (202), an output pull-up resistor R4 (203), a pull-up resistor R5 (204) of a transistor Q1 and a transistor Q1 (205);
referring to fig. 2, digital signal S of spi serial communication IN1 When the voltage is high level, the current limiting resistor R1 (202) drives the light emitting diode in the photoelectric isolation integrated circuit 6N137 (201) to emit light, the phototriode in the phototriode is conducted, the output pin VOUT is set to be low level, the output level reversal is realized through the pull-up resistor R4 (203), the pull-up resistor R5 (204) and the transistor Q1 (205), and the isolated SPI serial communication signal S is output OUT1 (ii) a Therefore, the isolation of digital signals of serial communication of the SPI at the low-voltage end and the high-voltage end is realized;
fig. 3 is an OPA548 power amplifier circuit, including an integrated power amplifier OPA548 (301), an input resistor R6 (302), a proportional amplifying resistor R7 (303), a feedback resistor R8 (304), and an enable resistor R9 (305);
referring to fig. 3, the analog voltage signal V output from the high-speed high-precision DA conversion circuit in1 And V in2 Inputting the non-inverting input end of the OPA548 power amplification circuit, wherein R6 (302) is a non-inverting input resistor, R7 (303) is a proportional amplification resistor, and R8 (304) is a feedback resistor, and forming an amplification link of the power amplification circuit, and inputting a voltage signal V in1 And V in2 Scaled up to V d1 And V d2 And the output current is greatly increased, and the peak output current can reach 5A d1 And V d2 Then the piezoelectric ceramic is respectively connected to an MOSFET power tube T1 (106) and an MOSFET power tube T2 (110) to realize the control of the charging and discharging current of the piezoelectric ceramic;
FIG. 4 is a graph showing transfer characteristics of MOSFET power transistor T1 (106) and MOSFET power transistor T2 (110);
referring to fig. 4, both MOSFET power transistor T1 (106) and MOSFET power transistor T2 (110) employ N-channel MOSFET FDA38N30, which has a threshold voltage of about +4V when the gate drive voltage V is applied GS (i.e. V) d1 And V d2 ) When the voltage changes from +4V to +6V, the drain current I of the MOSFET power tube D Varies approximately linearly from 0 to 13A, and V GS And I D Have a one-to-one correspondence; therefore, by controlling the gate drive voltage V of the MOSFET power transistor T1 (106) and the MOSFET power transistor T2 (110) d1 And V d2 The adjustment of the charge and discharge current of the piezoelectric ceramics can be realized;
FIG. 5 is a graph showing voltage changes of piezoelectric ceramics obtained when the piezoelectric ceramics are charged and discharged by using different charging and discharging currents;
referring to fig. 5, current values I are respectively adopted in the charging stages C2 And I C2 Charging the piezoelectric ceramic (113), I C2 ＞I C1 Therefore, the voltage rising rate is increased in the later period of charging; using current value I in discharge phase D1 The piezoelectric ceramic (113) is discharged, and the voltage linearly decreases.
The invention provides a high-voltage high-precision large-current piezoelectric ceramic constant-current driving circuit; based on the technologies of DSP digital processing, photoelectric isolation, high-precision digital-to-analog conversion, power amplification, MOSFET constant current amplification, digital closed-loop control and the like, the constant current driving circuit for the high-voltage high-precision large current piezoelectric ceramic is provided, the constant current output of dozens of amperes can be realized, and the dynamic response characteristic of piezoelectric ceramic control is greatly improved; the response MOSFET can be selected according to the driving voltage of the piezoelectric ceramic, so that the driving voltage of hundreds of volts or even thousands of volts is realized; the high-speed SPI serial DA conversion circuit is adopted, us-level dynamic charging and discharging current regulation can be realized, multiple sections of different charging and discharging currents can be set according to actual control requirements in a charging and discharging process, and the flexibility of piezoelectric ceramic voltage control is greatly improved; the driving voltage of the MOSFET power tube is set to be zero, so that the current of the MOSFET is completely cut off, and the aim of reducing the static power consumption of the constant current driving circuit is fulfilled.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (1)
1. The utility model provides a high-pressure high accuracy heavy current piezoceramics constant current drive circuit which characterized in that: it includes: the device comprises a DSPIC30F5013 control circuit (101), a photoelectric isolation circuit I (102), a high-speed high-precision DA conversion circuit I (103), an OPA548 power amplification circuit I (104), a piezoelectric ceramic charging driving power supply + VCC (105), a MOSFET power tube T1 (106), a photoelectric isolation circuit II (107), a high-speed high-precision DA conversion circuit II (108), an OPA548 power amplification circuit II (109), a MOSFET power tube T2 (110), a piezoelectric ceramic discharging driving power supply-VEE (111), a current sensor (112), piezoelectric ceramic (113), a divider resistor R1 (114), a sampling resistor R2 (115), a current signal conditioning circuit (116) and a voltage signal conditioning circuit (117);
the DSPIC30F5013 control circuit (101) outputs two paths of SPI serial communication signals, wherein the SPI serial communication signals are connected to the photoelectric isolation circuit I (102), and the signals are realized through photoelectric conversionThe serial communication signals after being isolated are connected to a high-speed high-precision DA conversion circuit I (103) again, and digital signals are converted into analog voltage signals V in1 Output of the signal V in1 Then the signal is input into an OPA548 power amplification circuit I (104) for power amplification, the peak output current can reach 5A, and the amplified signal V d1 Then the power source is connected to a gate pole of the MOSFET power tube T1 (106) to realize the drive of the MOSFET power tube T1; similarly, the SPI serial communication II signal is connected to the photoelectric isolation circuit II (107), signal isolation is realized through photoelectric conversion, the isolated serial communication signal is connected to the high-speed high-precision DA conversion circuit II (108), and a digital signal is converted into an analog voltage signal V in2 Output of the signal V in2 Then the signal is input into an OPA548 power amplification circuit II (109) for power amplification, the peak output current can reach 5A, and the amplified signal V d2 Then the power transistor is connected to a gate pole of the MOSFET power transistor T2 (110) to realize the drive of the MOSFET power transistor T2; the source electrode of the MOSFET power tube T1 (106) is connected with the drain electrode of the MOSFET power tube T2 (110) and then is connected to the piezoelectric ceramic (113), the piezoelectric ceramic charging driving power supply + VCC (105) is connected to the drain electrode of the MOSFET power tube T1 (106), and the piezoelectric ceramic discharging driving power supply-VEE (111) is connected to the source electrode of the MOSFET power tube T2 (110); when the DSPIC30F5013 control circuit (101) controls the driving signal V d1 Making MOSFET power tube T1 (106) work in constant current amplification state and controlling drive signal V d2 =0 MOSFET power transistor T2 (110) is closed, piezoelectric ceramic charging driving power supply + VCC (105) charges piezoelectric ceramic (113) with constant current, and the magnitude of charging current is based on driving signal V d1 The size and the transfer characteristic curve of the MOSFET power tube T1 are determined; when the DSPIC30F5013 control circuit (101) controls the driving signal V d1 =0 MOSFET power transistor T1 (106) is turned off and drive signal V is controlled d2 The MOSFET power tube T2 (110) is enabled to work in a constant current amplification state, the piezoelectric ceramic (113) discharges the piezoelectric ceramic discharge driving power supply VEE (111) through the MOSFET power tube T2 for constant current discharge, and the discharge current is the driving signal V d2 The size and the transfer characteristic curve of the MOSFET power tube T2 are determined;
the current sensor (112) is connected in series in the piezoelectric ceramic charge-discharge circuit for collecting piezoelectricityCurrent value I of charge and discharge of ceramic f The current signal is connected to a current signal conditioning circuit (116), and the processed charge-discharge current signal I fAD Then connected to the AD conversion input port AD1 of the DSPIC30F5013 control circuit (101) for sampling the charging and discharging current, and the DSP obtains the charging and discharging current I f Then the driving voltage V of the MOSFET power tube T1 (106) can be adjusted in real time according to the internal program d1 And a driving voltage V of the MOSFET power transistor T2 (110) d2 Namely, the high-precision constant-current charging and discharging of the piezoelectric ceramic (113) are realized through the current digital closed-loop negative feedback; the divider resistor R1 (114) and the sampling resistor R2 (115) are connected in series and then connected in parallel at two ends of the piezoelectric ceramic (113) for collecting the voltage U at the two ends of the piezoelectric ceramic f The voltage signal conditioning circuit (117) collects the voltage U at two ends of the piezoelectric ceramic f Processing the processed piezoelectric ceramic voltage signal U fAD Then connected to an AD conversion input port AD2 of a DSPIC30F5013 control circuit (101) to sample the voltage of the piezoelectric ceramics, and the DSP obtains the voltage U at two ends of the piezoelectric ceramics f Then, the MOSFET power tube T1 (106) and the MOSFET power tube T2 (110) can be closed in real time according to an internal program, namely, the charge and discharge voltage control of the piezoelectric ceramic (113) is realized through voltage digital closed-loop negative feedback;
the DSPIC30F5013 control circuit (101) consists of a DSPIC30F5013 high-performance digital signal controller and peripheral circuits thereof, and has the functions of adjusting the gate driving voltage of an MOSFET power tube T1 (106) and an MOSFET power tube T2 (110) through two SPI serial communication interfaces, so that the control of the charging and discharging current of the piezoelectric ceramics is realized;
the photoelectric isolation circuit I (102) and the photoelectric isolation circuit II (107) are identical in structure and are composed of three groups of identical photoelectric isolation units, and photoelectric isolation of SPI serial communication signals is achieved together; each group of photoelectric isolation units comprises a photoelectric isolation integrated circuit 6N137 (201), a photoelectric isolation current-limiting resistor R1 (202), an output pull-up resistor R4 (203), a pull-up resistor R5 (204) of a transistor Q1 and a transistor Q1 (205), and has the functions of isolating digital signals of SPI serial communication in a photoelectric coupling mode, realizing isolation transmission of digital signals of a low-voltage end and a high-voltage end and finally realizing constant current driving of MOSFET power tubes T1 and T2 of the high-voltage end;
high-speed high accuracy DA converting circuit I (103) and high-speed high accuracy DA converting circuit II (108) the same structure, all adopt DAC8560 converting circuit, DAC8560 is a section low-power consumption, voltage output, single channel, 16 bit, 3-wire system serial DA converting circuit, serial communication speed 30MHz, can realize DA output voltage's quick setting, the function is that the SPI serial communication signal who comes the transmission of optoelectronic isolation circuit I (102) and optoelectronic isolation circuit II (107) converts analog voltage signal V into in1 And V in2 Outputting;
the OPA548 power amplification circuit I (104) and the OPA548 power amplification circuit II (109) are identical in structure, comprise an integrated power amplifier OPA548 (301), an input resistor R6 (302), a proportional amplification resistor R7 (303), a feedback resistor R8 (304) and an enabling resistor R9 (305), and have the function of forming an analog voltage signal V to be input by the power amplification circuit in1 And V in2 Amplifying and converting into V d1 And V d2 The amplifier is connected to the MOSFET power tube T1 (106) and the MOSFET power tube T2 (110);
the MOSFET power tube T1 (106) and the MOSFET power tube T2 (110) adopt FDA38N30N channel MOSFETs, the highest withstand voltage value is 300V, the maximum output current is 38A, and the requirements of piezoelectric ceramic working voltage and driving current can be met;
the piezoelectric ceramic charging driving power supply + VCC (105) adopts a universal AC/DC switching power supply, and the output voltage can be determined according to the working voltage of the piezoelectric ceramic;
the piezoelectric ceramic discharge driving power supply-VEE (111) adopts a general AC/DC switching power supply, and the output voltage is-24V to-30V;
the current sensor (112) adopts an ACS712 Hall current sensor integrated circuit, and has the function of being connected in series in a piezoelectric ceramic charge-discharge circuit to collect charge-discharge current;
the piezoelectric ceramics (113) are stacked piezoelectric ceramics, and have the function of converting voltages applied to two ends of the piezoelectric ceramics into the displacement of the piezoelectric ceramics by utilizing the piezoelectric effect;
the current signal conditioning circuit (116) consists of an operational amplifier, a resistor and a capacitor and has the functions ofIs a current signal I fed back by a current sensor (112) f Amplifying and filtering, and then connecting to an AD1 input port of a DSPIC30F5013 control circuit (101) for digital conversion;
the voltage signal conditioning circuit (117) consists of an operational amplifier, a resistor and a capacitor, and has the function of feeding back a voltage signal U from the divider resistor R1 (114) and the sampling resistor R2 (115) f Amplifying and filtering are carried out, and then the digital conversion is carried out by connecting the digital conversion circuit to an AD2 input port of a DSPIC30F5013 control circuit (101).
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