CN114395283A - Oil-based barrier slurry for removing film of semiconductor nano electrothermal film - Google Patents
Oil-based barrier slurry for removing film of semiconductor nano electrothermal film Download PDFInfo
- Publication number
- CN114395283A CN114395283A CN202210060744.7A CN202210060744A CN114395283A CN 114395283 A CN114395283 A CN 114395283A CN 202210060744 A CN202210060744 A CN 202210060744A CN 114395283 A CN114395283 A CN 114395283A
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- China
- Prior art keywords
- film
- semiconductor nano
- electrothermal film
- nano electrothermal
- organic carrier
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 230000004888 barrier function Effects 0.000 title claims abstract description 34
- 239000002002 slurry Substances 0.000 title claims abstract description 31
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims abstract description 30
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 17
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000001856 Ethyl cellulose Substances 0.000 claims abstract description 15
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229920001249 ethyl cellulose Polymers 0.000 claims abstract description 15
- 235000019325 ethyl cellulose Nutrition 0.000 claims abstract description 15
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 15
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 229920006026 co-polymeric resin Polymers 0.000 claims 2
- -1 magnesium oxide-ethylene glycol-vinyl acetate Chemical compound 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000005038 ethylene vinyl acetate Substances 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000010438 heat treatment Methods 0.000 abstract description 9
- 238000005245 sintering Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 239000007888 film coating Substances 0.000 abstract description 6
- 238000009501 film coating Methods 0.000 abstract description 6
- 238000005406 washing Methods 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 4
- 230000003670 easy-to-clean Effects 0.000 abstract description 2
- 230000007774 longterm Effects 0.000 abstract description 2
- 238000004321 preservation Methods 0.000 abstract description 2
- 238000007639 printing Methods 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000005485 electric heating Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/63—Additives non-macromolecular organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/65—Additives macromolecular
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/34—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater flexible, e.g. heating nets or webs
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention relates to a film-removing oily barrier slurry for a semiconductor nano electrothermal film. The invention provides an oily barrier slurry, which contains magnesium oxide and an organic carrier, wherein the organic carrier consists of butyl carbitol, cyclohexanone and ethyl cellulose, the barrier slurry has the advantages of easily controlled viscosity, good printing performance and convenient long-term preservation of an oily state, the production of a semiconductor nano electrothermal film by utilizing the barrier slurry has high economic benefit, can realize large-scale industrial stable production, does not crack after high-temperature sintering, can perfectly cover an insulating part of a film-coated substrate to prevent film coating, is easy to clean after high-temperature sintering, can be removed by wiping with hands, and is cleaner and quicker by washing with water. The barrier slurry for the semiconductor nano electrothermal film is used before a film coating process, so that the semiconductor nano electrothermal film can be prevented from being coated on the barrier of a base body, and film removing processing is not needed, and the production efficiency of a semiconductor nano electrothermal film heating body is greatly improved.
Description
Technical Field
The invention relates to the technical field of semiconductor nano electrothermal films, in particular to a film-removing oily barrier slurry for a semiconductor nano electrothermal film.
Background
The semiconductor nano electrothermal film is a new generation of heating material. The heating mode of the heating wire is different from that of the traditional metal resistance wire. The high-voltage direct current power supply has zero inductive reactance, generates heat by a pure resistor, can accept 1V-1000V voltage input, does not divide a power supply into positive and negative, and can be used by alternating current and direct current. And the traditional linear heating form is broken through by surface heating, the heat transfer effect is good, the electric heat conversion efficiency is high: 80% -97%, has better energy-saving advantage. The coating has the physicochemical properties of acid and alkali corrosion resistance, oxidation resistance, flame retardance, moisture resistance, high film hardness, no toxicity, no harmful radiation, no pollution and the like, and the film can be damaged only by polishing with hardness higher than that of carborundum.
The non-heating area of the semiconductor nano electric heating film needs to be insulated, namely the area of the semiconductor nano electric heating film, which is called to remove redundant electric heating film. The film removing technology generally comprises methods of laser film removing, polishing, sand blasting film removing, chemical corrosion and the like, but most of the methods are applied to subsequent processing film removing treatment after film coating, and are suitable for small-batch sample making. However, in mass production, the post-processing causes a lot of labor and time costs. The barrier slurry is coated on the substrate, so that the semiconductor nano electrothermal film can be prevented from being coated on the insulating position of the substrate before film coating, and then film removing processing is not needed, and the production efficiency of the semiconductor nano electrothermal film heating body is greatly improved.
Disclosure of Invention
In view of the problems in the prior art, the invention discloses a semiconductor nano electrothermal film oil removal barrier slurry which comprises the following main components in parts by weight:
60% -70% of magnesium oxide;
30% -40% of organic carrier;
the organic carrier comprises the following components in parts by weight:
80% -90% of butyl carbitol;
5% -10% of cyclohexanone;
5 to 10 percent of ethyl cellulose.
In a preferred embodiment of the present invention, the magnesium oxide is heavy magnesium oxide.
As a preferable scheme of the invention, the organic carrier is prepared by stirring and mixing butyl carbitol, cyclohexanone and ethyl cellulose at 75-95 ℃ for 2-5 hours.
As a preferred scheme of the invention, the isolation slurry is coated on the insulation part of the semiconductor nano electrothermal film substrate by adopting a screen printing mode, then the semiconductor nano electrothermal film is coated on the substrate by high-temperature sintering, the electrothermal film is not formed at the part coated with the isolation slurry, the semiconductor nano electrothermal film isolation slurry is removed by physical friction or water washing after cooling, and then the coated substrate can be made into silver paste electrodes and wiring terminals.
The invention has the beneficial effects that: the invention provides an oily barrier slurry, which contains magnesium oxide and an organic carrier, wherein the organic carrier consists of butyl carbitol, cyclohexanone and ethyl cellulose, the barrier slurry has the advantages of easily controlled viscosity, good printing performance and convenient long-term preservation of an oily state, the production of a semiconductor nano electrothermal film by utilizing the barrier slurry has high economic benefit, can realize large-scale industrial stable production, does not crack after high-temperature sintering, can perfectly cover an insulating part of a film-coated substrate to prevent film coating, is easy to clean after high-temperature sintering, can be removed by wiping with hands, and is cleaner and quicker by washing with water. The barrier slurry for the semiconductor nano electrothermal film is used before a film coating process, so that the semiconductor nano electrothermal film can be prevented from being coated on the barrier of a base body, and film removing processing is not needed, and the production efficiency of a semiconductor nano electrothermal film heating body is greatly improved.
Detailed Description
Example 1
The invention relates to a film-removing oily barrier slurry for a semiconductor nano electrothermal film, which comprises the following main components in parts by weight:
60% of magnesium oxide;
40% of organic carrier;
the organic carrier comprises the following components in parts by weight:
80% of butyl carbitol;
10% of cyclohexanone;
10% of ethyl cellulose.
Wherein the magnesium oxide is heavy magnesium oxide; the organic carrier is prepared by stirring and mixing butyl carbitol, cyclohexanone and ethyl cellulose at 75 ℃ for 2 hours; the method comprises the steps of coating the insulation part of the semiconductor nano electrothermal film substrate with the barrier slurry in a screen printing mode, then coating the substrate with the semiconductor nano electrothermal film through high-temperature sintering, wherein the part coated with the barrier slurry cannot form an electrothermal film, removing the barrier slurry of the semiconductor nano electrothermal film through physical friction or water washing after cooling, and then manufacturing a silver paste electrode and a wiring terminal on the coated substrate.
Example 2
The invention relates to a film-removing oily barrier slurry for a semiconductor nano electrothermal film, which comprises the following main components in parts by weight:
70% of magnesium oxide;
30% of organic carrier;
the organic carrier comprises the following components in parts by weight:
90% of butyl carbitol;
5% of cyclohexanone;
5 percent of ethyl cellulose.
Wherein the magnesium oxide is heavy magnesium oxide; the organic carrier is prepared by stirring and mixing butyl carbitol, cyclohexanone and ethyl cellulose at 95 ℃ for 5 hours; the method comprises the steps of coating the insulation part of the semiconductor nano electrothermal film substrate with the barrier slurry in a screen printing mode, then coating the substrate with the semiconductor nano electrothermal film through high-temperature sintering, wherein the part coated with the barrier slurry cannot form an electrothermal film, removing the barrier slurry of the semiconductor nano electrothermal film through physical friction or water washing after cooling, and then manufacturing a silver paste electrode and a wiring terminal on the coated substrate.
Example 3
The invention relates to a film-removing oily barrier slurry for a semiconductor nano electrothermal film, which comprises the following main components in parts by weight:
65% of magnesium oxide;
35% of an organic carrier;
the organic carrier comprises the following components in parts by weight:
85% of butyl carbitol;
7% of cyclohexanone;
and 8% of ethyl cellulose.
Wherein the magnesium oxide is heavy magnesium oxide; the organic carrier is prepared by stirring and mixing butyl carbitol, cyclohexanone and ethyl cellulose at 85 ℃ for 3 hours; the method comprises the steps of coating the insulation part of the semiconductor nano electrothermal film substrate with the barrier slurry in a screen printing mode, then coating the substrate with the semiconductor nano electrothermal film through high-temperature sintering, wherein the part coated with the barrier slurry cannot form an electrothermal film, removing the barrier slurry of the semiconductor nano electrothermal film through physical friction or water washing after cooling, and then manufacturing a silver paste electrode and a wiring terminal on the coated substrate.
Parts not described in detail herein are prior art.
Although the present invention has been described in detail with reference to the specific embodiments, the present invention is not limited to the above embodiments, and various changes and modifications without inventive changes may be made within the knowledge of those skilled in the art without departing from the spirit of the present invention.
Claims (7)
1. The film oil removal blocking slurry for the semiconductor nano electrothermal film is characterized by comprising the following main components in parts by weight: 60 to 70 percent of magnesium oxide and 30 to 40 percent of organic carrier, wherein the organic carrier consists of 80 to 90 percent of butyl carbitol, 5 to 10 percent of cyclohexanone and 5 to 10 percent of ethyl cellulose.
2. The de-filming oily barrier paste of the semiconductor nano electrothermal film as claimed in claim 1, wherein: the magnesium oxide-ethylene-vinyl acetate copolymer consists of 60% of magnesium oxide and 40% of organic carrier, wherein the organic carrier consists of 80% of butyl carbitol, 10% of cyclohexanone and 10% of ethyl cellulose.
3. The de-filming oily barrier paste of the semiconductor nano electrothermal film as claimed in claim 1, wherein: the magnesium oxide-ethylene glycol-vinyl acetate copolymer resin is composed of 70% of magnesium oxide and 30% of an organic carrier, wherein the organic carrier is composed of 90% of butyl carbitol, 5% of cyclohexanone and 5% of ethyl cellulose.
4. The de-filming oily barrier paste of the semiconductor nano electrothermal film as claimed in claim 1, wherein: the magnesium oxide-ethylene glycol-vinyl acetate copolymer resin is composed of 65% of magnesium oxide and 35% of an organic carrier, wherein the organic carrier is composed of 85% of butyl carbitol, 7% of cyclohexanone and 8% of ethyl cellulose.
5. The de-filming oily barrier paste of the semiconductor nano electrothermal film as claimed in claim 1, wherein: the magnesium oxide is heavy magnesium oxide.
6. The de-filming oily barrier paste of the semiconductor nano electrothermal film as claimed in claim 1, wherein: the organic carrier is prepared by stirring and mixing butyl carbitol, cyclohexanone and ethyl cellulose at 75-95 ℃ for 2-5 hours.
7. The de-filming oily barrier paste of the semiconductor nano electrothermal film as claimed in claim 1, wherein: and coating the insulating slurry on the insulating part of the semiconductor nano electrothermal film substrate by adopting a screen printing mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210060744.7A CN114395283A (en) | 2022-01-19 | 2022-01-19 | Oil-based barrier slurry for removing film of semiconductor nano electrothermal film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210060744.7A CN114395283A (en) | 2022-01-19 | 2022-01-19 | Oil-based barrier slurry for removing film of semiconductor nano electrothermal film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114395283A true CN114395283A (en) | 2022-04-26 |
Family
ID=81230331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210060744.7A Pending CN114395283A (en) | 2022-01-19 | 2022-01-19 | Oil-based barrier slurry for removing film of semiconductor nano electrothermal film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114395283A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07147136A (en) * | 1993-09-29 | 1995-06-06 | Oki Electric Ind Co Ltd | Protective film for gas discharge panel, its forming method, and gas discharge panel and display device using the protective film for gas discharge panel |
| CN101355831A (en) * | 2007-07-27 | 2009-01-28 | 刘占友 | Method for producing transparent high-temperature electric heating membrane pipe with self-constant temperature |
-
2022
- 2022-01-19 CN CN202210060744.7A patent/CN114395283A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07147136A (en) * | 1993-09-29 | 1995-06-06 | Oki Electric Ind Co Ltd | Protective film for gas discharge panel, its forming method, and gas discharge panel and display device using the protective film for gas discharge panel |
| CN101355831A (en) * | 2007-07-27 | 2009-01-28 | 刘占友 | Method for producing transparent high-temperature electric heating membrane pipe with self-constant temperature |
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| PB01 | Publication | ||
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Application publication date: 20220426 |