CN114384099A - Device and method for detecting on-off of silicon photomultiplier array signal - Google Patents
Device and method for detecting on-off of silicon photomultiplier array signal Download PDFInfo
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Abstract
The invention relates to a device and a method for detecting the on-off of a silicon photomultiplier array signal, wherein the device comprises the following components: the system comprises a radioactive source, a standard crystal array coupled with an SiPM array to be detected, a filter circuit, a radio frequency amplification circuit, an ADC (analog to digital converter) acquisition device and a processing device; the radioactive source excites the standard crystal array to enable the SiPM array to be detected to output two types of signals; the two types of signals are respectively transmitted to an ADC acquisition device through a filter circuit and a radio frequency amplification circuit, the ADC acquisition device acquires N paths of energy information based on signals of a time trigger circuit and transmits the acquired N paths of energy signals to a processing device, so that the processing device generates a two-dimensional position image for judging whether the time trigger circuit and the energy circuit of each SiPM chip in the SiPM array to be detected are abnormal or not based on the N paths of energy signals. The device can quickly and effectively detect the working state of the silicon photomultiplier array, meets the requirement of current large-scale production detection, and can effectively reduce the labor cost.
Description
Technical Field
The invention relates to a silicon photomultiplier measurement technology, in particular to a device and a method for detecting the on-off of a silicon photomultiplier array signal.
Background
When the silicon photomultiplier is welded in an array, no signal output or abnormal signal output can be caused due to problems in the welding process or defects of the silicon photomultiplier, and a method capable of selecting and positioning abnormal chips in the silicon photomultiplier array is needed.
For array detection formed by a small number of silicon photomultiplier tubes, test points are relatively easy to set during circuit design to measure, investigate and confirm a problem chip, and the position of the problem chip is positioned. However, for a large number of silicon photomultiplier arrays, especially for double readout (time triggered and energy paths) of each silicon photomultiplier, the number of detections to be determined is directly doubled. After the number of the output circuits is increased in a large scale, whether the two output circuits of the silicon photomultiplier can work normally or not is judged by testing the test points one by one, and the detection time and the labor cost are high when the large-scale production detection requirement exists.
Disclosure of Invention
Technical problem to be solved
In view of the above-mentioned drawbacks and deficiencies of the prior art, the present invention provides an apparatus and method for detecting the on/off state of a silicon photomultiplier array signal, which can quickly and effectively detect the on/off state of the silicon photomultiplier array.
(II) technical scheme
In order to achieve the purpose, the invention adopts the main technical scheme that:
in a first aspect, an embodiment of the present invention provides an apparatus for detecting on/off of a signal of a silicon photomultiplier array, including:
the system comprises a radioactive source, a standard crystal array coupled with a to-be-detected SiPM array, a filter circuit, a radio frequency amplification circuit, an ADC (analog to digital converter) acquisition device and a processing device;
the radioactive source is used for exciting the coupled scintillation crystal in the standard crystal array of the SiPM array to be detected to emit light so that the SiPM array to be detected outputs two types of signals;
the first end of the filter circuit is connected with the output end of the energy circuit of the SiPM array to be detected, the filter circuit is used for adding the energy outputs of all the SiPM chips in the SiPM array to be detected and outputting four energy signals, the first end of the radio frequency amplification circuit is connected with the output end of the time trigger circuit of the SiPM array to be detected, and the radio frequency amplification circuit is used for cascading amplifying and adding the time circuit output signals of all the SiPM chips in the SiPM array to be detected so as to output a time trigger signal;
the ADC acquisition device is connected with the second end of the filter circuit and the second end of the radio frequency amplification circuit, acquires four paths of energy signals based on one path of time trigger signal, and transmits the acquired four paths of energy signals to the processing device, so that the processing device generates two-dimensional position images for judging whether two paths of outputs of each SiPM chip in the SiPM array to be detected are abnormal or not based on the four paths of energy signals.
Optionally, the radiation source is a gamma radiation source;
the filter circuit includes: and the filter resistance network is used for summing signals output by the output ends of the energy paths, and outputs four paths of energy signals.
Optionally, the processing apparatus is specifically configured to:
generating a two-dimensional position image of the standard crystal array by utilizing an Euler equation based on the four paths of energy signals; whether an energy path of the SiPM chip corresponding to the display bright point at each position on the two-dimensional position image is abnormal or not;
if at least one position has no bright spot or the bright spot is abnormal, determining that the energy path of the SiPM chip corresponding to the position is abnormal;
acquiring energy spectrum information of a single crystal strip based on the two-dimensional position image; and determining whether the time trigger path of the corresponding SiPM chip is abnormal or not according to the energy spectrum information of the crystal bar.
Optionally, the radio frequency amplifying circuit includes: the cascade circuit, the summing circuit and the comparator are connected in sequence; a first set value corresponding to the time trigger signal is preset in the comparator;
if the time trigger signal output by the summing circuit is greater than a first set value, the comparator outputs the time trigger signal, otherwise, the time trigger signal is not output; the time trigger signal output by the comparator is used as the trigger signal of the ADC acquisition device for acquiring the energy signal;
the first set value is determined according to a trigger value when a time trigger circuit of at least one SiPM chip in the SiPM array to be detected is abnormal, and is a numerical value smaller than the trigger value.
Optionally, the standard crystal array and the to-be-tested SiPM array have the same structure;
alternatively, the standard crystal array is a 15 × 15 LSO type crystal array with self-decay characteristics.
In a second aspect, an embodiment of the present invention provides a detection method based on any one of the devices for detecting on/off of a signal of a silicon photomultiplier array in the first aspect, where the method includes:
s10, coupling the normal SiPM array with a standard crystal array; setting a time trigger threshold value of a time trigger path in the ADC acquisition device; the ADC acquisition device is respectively connected with the output end of the energy circuit of the normal SiPM array and the output end of the time trigger circuit through a filter circuit and a radio frequency amplification circuit;
after the radioactive source is excited, the ADC acquisition device acquires four paths of energy signals and transmits the energy signals to the processing device, and the processing device integrates and baseline-buckles waveforms of the four paths of energy signals to acquire a first two-dimensional position image of a normal SiPM array passing through a standard crystal array and standard information of a spectrum front edge in energy spectrum information of a single crystal strip in the standard crystal array;
s20, coupling the standard crystal array with a SiPM array to be detected;
after the radioactive source is excited, the ADC acquisition device acquires four paths of energy signals and transmits the energy signals to the processing device; the data volume of the ADC acquisition device acquired twice is the same;
the processing device integrates and baseline-buckles the waveforms of the four paths of energy signals to obtain a second two-dimensional position image of the standard crystal array passing through the to-be-detected SiPM array and energy spectrum information of a single crystal bar in the standard crystal array;
s30, comparing the second two-dimensional position image with the first two-dimensional position image to determine whether the energy path of each SiPM chip in the SiPM array to be detected is abnormal;
and comparing the energy spectrum leading edge information of the energy spectrum information of the single crystal strip in the S20 with the standard information to determine whether the time trigger circuit of the corresponding SiPM chip is abnormal.
Optionally, S30 includes:
calculating four-way energy values of each case, and calculating by using an Euler formula to obtain a two-dimensional position image of the standard crystal array; each bright spot in the two-dimensional position image represents a crystal strip corresponding to the standard crystal array;
comparing the two-dimensional position image corresponding to the SiPM array to be detected with the two-dimensional position image corresponding to the normal SiPM array, and determining whether the energy path of each SiPM chip in the SiPM array to be detected is abnormal or not;
and dividing all events of each crystal strip in the two-dimensional position image, and adding N paths of energy of each crystal strip to obtain energy spectrum information of a single crystal strip.
Optionally, when N is 4, S30 includes:
the first step is as follows: integrating the fixed length of the energy signal waveform to obtain a signal integral area, deducting a baseline of the waveform signal from the integral area to obtain integral area values of an A path, a B path, a C path and a D path;
the second step is that: obtaining x and y values of the two-dimensional position image through an Euler equation by adopting an A path integral value, a B path integral value, a C path integral value and a D path integral value obtained by integrating and deducting a baseline;
specifically, the euler formula is:
X＝(A+D)/(A+B+C+D)；
Y＝(C+D)/(A+B+C+D)；
or, X ═ (a + B)/(a + B + C + D);
Y＝(A+D)/(A+B+C+D)；
the third step: dividing the two-dimensional position image map; one gathered bright point of the two-dimensional image corresponds to one crystal bar, the two-dimensional image is divided into areas according to the positions of the bright points, the areas are numbered, and one number corresponds to one crystal bar; all events in one numbered region are all events of the corresponding numbered bars which are excited by the radioactive source;
if the standard crystal array comprises 15x15 crystal bars, the two-dimensional position image has 225 regions and numbers,
the fourth step: counting the total event count in each region by adopting the integrated area values of the path A, the path B, the path C and the path D, namely counting the total event count measured by the corresponding SiPM chip after the corresponding numbered crystal bars are excited by the light;
adding the four paths of integrals of the events in each crystal strip area, namely A + B + C + D, into the actually measured crystal strip deposition energy of the SiPM chip of each event, and accumulating the deposition energy;
the fifth step: judging the mode of an energy path: if the total count in the single crystal strip area is less than a set value, the problem of the energy path is represented, and the two-dimensional position image is represented as an obvious dim or lack of bright spots; comparing the difference with the average count of all single crystals;
and a sixth step: judging the way of the time trigger path: and counting the appearance position of the front edge of the energy spectrum of each single crystal, wherein the output of the SiPM chip time trigger circuit corresponding to the crystal with the larger appearance position of the front edge of the energy spectrum has problems.
Optionally, the determining the time trigger path further includes:
each position crystal bar corresponds to a threshold value, and a threshold value matrix is generated;
firstly, generating a standard leading edge value matrix, obtaining a maximum test error value through multiple measurements, and superposing the maximum test error value on the standard leading edge value matrix;
Pthreshold value＝PStandard front edge value+XMaximum allowable deviation value*PUnit of
PThreshold value: representing a matrix of M by M decision thresholds
M × M represents: number of crystal strips in standard crystal array;
Pstandard front edge value: coupling W different normal SiPM arrays by using a fixed standard crystal array to obtain an average matrix of M by M leading edge positions;
Pmaximum allowable deviation value: coupling W different normal SiPM array plates by using a fixed crystal array to obtain an average matrix of a leading edge position and obtain a group of W M data, wherein the data is the difference value X between the leading edge position of each crystal strip and the average value, and counting the standard deviation sigma and the average value X of the group of difference valuesMaximum allowable deviation valueMean +3 σ;
Punit ofIs an M by M identity matrix;
if the time trigger circuit is higher than the threshold value, the time trigger circuit corresponding to the SiPM chip of the crystal bar is abnormal, and if the time trigger circuit is lower than the threshold value, the time trigger circuit corresponding to the SiPM chip of the crystal bar is normal.
(III) advantageous effects
By means of the detection device, an operator can quickly and accurately detect the respective on-off states of the time trigger path and the energy path of each SiPM chip in the SiPM array, and the detection efficiency is effectively improved.
Aiming at detecting the signal path check of the SiPM array circuit, particularly the SiPM array with double-path output, the labor cost is reduced, and the detection efficiency is improved.
The SiPM chip without output of the time trigger circuit or the energy circuit can influence the overall detection efficiency and the time resolution performance of the SiPM array, and the method can screen out the SiPM array with the problems and repair the SiPM array, so that the performance of the SiPM array is ensured;
based on less electronic path acquisition and lower hardware cost, single measurement can detect whether the time trigger path and the energy path of the whole SiPM array are both normally output or not;
because the detection efficiency is greatly improved, the automatic detection and judgment in large batch can be realized, and the detection cost of the silicon photomultiplier array is reduced.
In addition, on the premise of increasing a certain single test time, LYSO or LSO crystal arrays with self-decay characteristics can be used for passive detection, so that the source cost and the detection condition requirements are reduced.
Drawings
FIG. 1 is a schematic diagram of an apparatus for detecting the on/off of signals of a silicon photomultiplier array according to an embodiment of the present invention;
FIG. 2 is a two-dimensional map of the location of energy path anomalies and normalizations, according to an embodiment of the present invention;
FIG. 3 is a two-dimensional map of the position of Fast out output anomaly with partial SiPM with normal energy paths for a and b;
FIG. 4 is a distribution diagram of the energy spectrum leading edge position values of an array single crystal;
FIG. 5 is a b-array single crystal energy spectrum leading edge position value distribution diagram;
FIG. 6 is a spectrum of abnormal local single crystal energy.
Detailed Description
For the purpose of better explaining the present invention and to facilitate understanding, the present invention will be described in detail by way of specific embodiments with reference to the accompanying drawings.
For better understanding, some words are explained, the SiPM array in this embodiment is formed by welding a plurality of SiPM single chips to a circuit board, the circuit board has a resistance capacitor for taking signals in addition to the SiPM chip, each SiPM chip directly has two paths of signal output, the signal branches are made inside the chip, some SiPM chips only have one path of signal output, and the signal branches need to be divided into two paths and processed respectively at the position closest to the SiPM chip.
That is, the SiPM array is composed of N SiPM chips, N being a positive integer greater than or equal to 4;
each SIPM chip on the SIPM array has two paths of output, one path of energy output and one path of time output.
The SIPM chip in the SIPM array mainly tested in this embodiment outputs the on-off state of two paths of signals. The SiPM array to be detected can also be called a circuit board to be detected, each SiPM chip adopts double-path reading, the double-path reading can be that the silicon photomultiplier has double-path signal output, and the output of the SiPM chip can be divided into two paths according to the application in a subsequent circuit.
One path of output of each SiPM chip is Fast out, the signal of the path has Fast rising time and relatively narrow waveform, and the signal is used as signal time resolution measurement and signal triggering and is called a time triggering path; the other output of the SiPM chip is Standard out, the signal rise time of the output is relatively slow, the waveform is relatively wide, and the output is used as an energy measuring path of the signal and is called an energy path.
In this embodiment, a single SiPM chip has 4 states:
1) fast out (output of a time trigger circuit) of the SiPM chip is normal, and standard out (output of an energy circuit) is normal.
2) Fast out of the SiPM chip exists, standard out does not exist, and the two-dimensional image has defects.
3) Fast out and standard out of the SiPM chip are not available, and the two-dimensional image has defects.
4) The SiPM chip Fastout is absent, the standard out is present, the two-dimensional image graph is not obviously abnormal, and the judgment is carried out through the crystal bar energy spectrum front edge.
In the present embodiment, the above four cases are measured.
Example one
As shown in fig. 1, a schematic diagram of an apparatus for detecting on/off of a signal of a silicon photomultiplier array according to an embodiment of the present invention includes:
the device comprises a radioactive source, a standard crystal array coupled with the SiPM array to be detected, a filter circuit, a radio frequency amplification circuit, an ADC acquisition device and a processing device.
In this embodiment, a couplant silicone oil or a light-transmitting soft silica gel pad may be added between the SiPM array to be measured and the standard crystal array to realize coupling, so as to reduce the total reflection phenomenon caused by the air layer when different materials are excessive.
The radioactive source is used for exciting and coupling the scintillation crystal in the standard crystal array of the SiPM array to be detected to emit light. For example, the standard crystal array of the present embodiment may be a LYSO crystal array composed of 15 × 15 pieces. In other embodiments, the standard crystal array may be a scintillator crystal array of QxQ strips that may be able to completely cover the SiPM array under test.
The gamma source used in the radiation source of this embodiment emits a single-energy photon, and the signal generated in the crystal is not single energy, because of compton scattering, and for LYSO and LSO type crystals, the self-radioactivity is self-contained, and self-decay occurs in the crystal to generate continuous energy, covering from the low energy region to the high energy region above 650 KeV.
The first end of the filter circuit is connected with the output end of the energy circuit of the SiPM array to be detected, and the filter circuit is used for adding and processing the multi-path energy signals output by the SiPM array to be detected so as to output four preset energy signals.
That is, the filter circuit includes: the filter resistor network/resistor network is used for summing signals output by a plurality of energy circuit output ends, as shown in fig. 1, the resistor network of the embodiment may be implemented by any one existing filter circuit.
The first end of the radio frequency amplification circuit is connected with the output end of the time trigger circuit of the SiPM array to be detected, and the radio frequency amplification circuit is used for carrying out cascade amplification and addition processing on time circuit output signals of all SiPM chips in the SiPM array to be detected so as to output a time trigger signal. Generally, the rf amplifying circuit may include a comparator, and a fixed high level time trigger signal after the internal signal passes through the comparator is output.
In this embodiment, the radio frequency amplification circuit is used for cascading Fast out signals of all SiPM chips in the SiPM array after radio frequency amplification, and may be cascaded in multiple stages or in one cascade, and after the cascade, a high level is output by the comparator as a time trigger signal, and the cascade mode does not affect the algorithm judgment result.
In this embodiment, the time trigger signal needs to be greater than the first set value through the comparator, and the time trigger signal can be compared through the predefined first set value, so as to output a high level signal with a fixed size as the time trigger signal. The first setpoint is proximate to a noise baseline height.
The ADC acquisition device is connected with the second end of the filter circuit and the second end of the radio frequency amplification circuit, acquires four paths of energy signals based on one path of time trigger signal, and transmits the acquired four paths of energy signals to the processing device, so that the processing device generates a two-dimensional position image for judging whether the time trigger path and the energy path of each SiPM chip in the SiPM array to be detected are abnormal or not based on the four paths of energy signals.
Understandably, the processing device generates a two-dimensional position image of the standard crystal array by utilizing an Euler equation based on the four paths of energy signals; whether an energy path of the SiPM chip corresponding to the display bright point at each position on the two-dimensional position image is abnormal or not; if at least one position has no bright spot or the bright spot is abnormal, determining that the energy path of the SiPM chip corresponding to the position is abnormal;
the processing device also acquires the energy spectrum information of a single crystal strip based on the two-dimensional position image; and determining whether the time trigger path of the corresponding SiPM chip is abnormal or not according to the energy spectrum information of the crystal bar.
In practical application, a two-dimensional position image is accumulated by more than millions of events, the two-dimensional image is a pixel map, each pixel point in the pixel map comprises two pieces of information, one piece of information is position information (x, y) of the point in the whole map, and x and y are integer; another information is the use of euler's equation to calculate the total count of events for which the position information is also (x, y). The two-dimensional position image actually shows the gradation corresponding to each pixel count value. The black-white-gray scale display representation count is selected for the color scale in the present embodiment.
In particular, for the aforementioned case 4): all SiPM chips Fast out are cascaded and added into a same-path level signal through a radio frequency amplifying circuit to control the acquisition of an ADC acquisition device, so that when a crystal strip in a Standard crystal array has a signal, the surrounding SiPM chips have Fast out output, when the signal is large enough, the surrounding SiPM chips have small signal output due to physical crosstalk, and a plurality of small signals Fast out can reach a trigger threshold value through addition, so that the ADC acquisition device acquires the signal, and because the Standard out of the SiPM chips is normal, a two-dimensional position image is counted. However, if the signal is small, the sum of the peripheral crosstalk signals cannot exceed a predetermined threshold (a first setting value described below), and the ADC acquisition device cannot acquire the signal. So in practice it can be seen if the threshold (i.e. the first set value) in the comparator is placed small enough, which is followed by a loss of a small signal on the strip.
Based on the device of this embodiment, operating personnel can detect the time trigger way and the energy way break-make state separately of every SiPM chip in the SiPM array that awaits measuring fast accurate, effectively improves detection efficiency.
Aiming at the detection of the signal path of the SiPM array circuit to be detected, particularly the SiPM array with double-path output, the labor cost is reduced, and the detection efficiency is improved.
The standard scintillation crystal array is coupled with the SiPM array as shown in fig. 1, the standard scintillation crystal array is excited by a gamma radiation source to emit light, and when gamma rays are incident into the scintillation crystals of the standard scintillation crystal array, the generated photons are converted into electric signals through the SiPM array to be measured. Signals output by the SiPM array to be tested are added and processed through the filter circuit (in the embodiment, only the energy path is added and processed, namely, signals output by the Standard out are changed into 4 paths after being added and filtered), and the number of output channels can be reduced on a large scale.
In this embodiment, the radioactive source is not limited, and the standard crystal itself has radioactivity, such as LYSO and LSO, and itself has beta decay, so that no additional radioactive source can be used, but because of the low radioactivity, the time required for collecting data of the same magnitude in a specific application is longer than that of the additional radioactive source if the additional radioactive source is not used.
That is, the Standard out signal of the SiPM array to be tested is added by the filter circuit and finally output for 4 paths of reading; fast out of all SiPM chips in the SiPM array to be detected is amplified in a cascade mode through a radio frequency amplifying circuit and then added into one path to serve as a collected time trigger signal.
The energy path of the SiPM array to be detected controls ACD collection through a time trigger signal, the collected four-path signal waveform is integrated to obtain the size of four-path signals, a two-dimensional position image of a standard crystal array can be obtained through calculation by utilizing an Euler equation, and each gathering bright point in the two-dimensional position image corresponds to an optical signal generated by repeatedly exciting a crystal strip. As shown in the right diagram of fig. 2, when the Standard out signal in the SiPM chip at the corresponding position of the crystal array is not output, the corresponding two-dimensional position image will have few points or abnormal dark counts of the points are few, so that the on-off state of the energy path of the SiPM chip and the position of the SiPM chip with problems can be rapidly judged. That is, it can be determined from the number of the two-dimensional position image which position of the SIPM chip has an abnormal count or energy spectrum, and the SIPM chip corresponding to the problematic chip has an abnormal state.
When the same SiPM chip is damaged and the Standard out and the Fast out are not output at the same time, the counting of the obvious dark area is less in the corresponding position of the two-dimensional position image.
The left graph of fig. 2 shows that when there is no output from the energy path of one SiPM, the total count of bars at the corresponding position of the two-dimensional position image is extremely low, and the bright point should be displayed as black in fig. 2.
FIG. 3 is a two-dimensional position image of Fast out output with normal energy paths and abnormal SiPM chip output in part a and b, and the output of the SiPM time path corresponding to the white frame is abnormal, but the abnormality can not be clearly identified from the brightness and darkness of the two-dimensional position image. a, intentionally cutting off Fast out path output of SiPM corresponding to a crystal bar in a white frame, and b, intentionally short-circuiting a group of SiPM chips;
FIG. 4 is a graph of a distribution of the values of the leading edge of the single crystal energy spectrum of the array a, a two-dimensional image of the SiPM array illustrating the normal output of Standard out of all the SiPM chips in all the arrays, but the Fast out read out of the SiPM chip at the white frame of the image corresponding to the position of the table plus black body number is no output; the values of the leading edge positions of the entire array 225 single crystals are shown in fig. 4, wherein the black character at the lower left center indicates that the leading edge position of one single crystal is abnormally high, and corresponds to the position point of the white frame in the two-dimensional position image map of the left image in fig. 3, the two-dimensional image map has the same position point, and has a little bit and no obvious difference in brightness and darkness, and a schematic white frame is added to fig. 3.
FIG. 5 is a b-array single crystal energy spectrum leading edge position value distribution diagram; the position of the leading edge of the entire array 225 of single crystals is shown in FIG. 5, where the 9 darkened boxes indicate that the position of the leading edge of the 9 crystals is abnormally high, corresponding to the 9 points within the white frame in the two-dimensional map of the right side of FIG. 3.
Fig. 6 is an energy spectrum diagram of an abnormal local single crystal energy spectrum a, which shows a comparison between an abnormal energy spectrum state and a normal energy spectrum state, and is used for understanding a state that the energy spectrum front edge is larger, the abnormal energy spectrum state is only the situation that the front edge of a compton platform is positioned backwards, the photoelectric peak of gamma photons can still be seen generally, and the problem SiPM is found out, corresponding to a crystal strip and 8 normal crystal strips on the upper, lower, left and right sides.
Example two
In the embodiment, the fixed standard scintillation crystal is adopted to test the silicon photomultiplier array, the two-way signals of all the silicon photomultipliers on the circuit board of the SiPM array are rapidly and accurately judged to be output through the two-dimensional position image corresponding to the fixed standard scintillation crystal, and the size and the shape of the output signals are all in a fixed range.
The embodiment provides a detection method of a detection device based on the first embodiment, and the method comprises the following steps:
s10, coupling a normal SIPM array by adopting a standard crystal array; setting a time trigger threshold value of a time trigger path in the ADC acquisition device; the ADC acquisition device is respectively connected with the output end of the energy circuit and the output end of the time trigger circuit of the SIPM array to be tested through a filter circuit and a radio frequency amplification circuit;
after the radioactive source is excited, the ADC acquisition device acquires four paths of energy signals and transmits the four paths of energy signals to the processing device, and the processing device integrates and baseline-buckles the waveforms of the four paths of energy signals to acquire a first two-dimensional position image of a normal SIPM array passing through a standard crystal array and standard information of a spectrum front edge in energy spectrum information of a single crystal strip in the standard crystal array;
s20, coupling the standard crystal array with the SIPM array to be tested;
after the radioactive source is excited, the ADC acquisition device acquires four paths of energy signals and transmits the energy signals to the processing device; the data volume of the two times of the ADC acquisition device is the same.
And the processing device integrates and buckles the baseline of the waveforms of the four paths of energy signals to obtain a second two-dimensional position image of the standard crystal array passing through the SIPM array to be detected and energy spectrum information of a single crystal bar in the standard crystal array.
In this embodiment, the acquisition may be realized by fixing the excitation time of the radiation source, or by fixing the data volume to be acquired, and the selection may be performed as required.
S30, comparing the second type two-dimensional position image with the first type two-dimensional position image, and determining whether the energy path of each SIPM chip in the SIPM array to be tested is abnormal;
and comparing the energy spectrum leading edge information of the energy spectrum information of the single crystal strip in the S20 with the standard information, and determining whether the time trigger circuit of the corresponding SIPM chip is abnormal or not.
For example, four-way energy values of each case are calculated, and a two-dimensional position image of the standard crystal array is obtained by calculation according to an Euler formula; each bright spot in the two-dimensional position image represents a crystal strip corresponding to the standard crystal array;
comparing the two-dimensional position image corresponding to the SIPM array to be tested with the two-dimensional position image corresponding to the SIPM array with a normal standard, and determining whether the energy path of each SIPM chip in the SIPM array to be tested is abnormal or not;
and dividing all events of each crystal strip in the two-dimensional position image, and adding N paths of energy of each crystal strip to obtain energy spectrum information of a single crystal strip.
In a specific application, the following detailed description is provided to better understand the process of S30.
The first step is as follows: integrating the fixed length of the energy signal waveform to obtain a signal integral area, deducting a baseline of the waveform signal from the integral area to obtain integral area values of an A path, a B path, a C path and a D path;
the second step is that: obtaining x and y values of the two-dimensional position image through an Euler equation by adopting an A path of integral value, a B path of integral value, a C path of integral value and a D path of integral value (namely the integral value obtained by subtracting the baseline from the ABCD four-path waveform);
specifically, the euler formula is:
X＝(A+D)/(A+B+C+D)；
Y＝(C+D)/(A+B+C+D)；
or, X ═ (a + B)/(a + B + C + D);
Y＝(A+D)/(A+B+C+D)；
the third step: dividing the two-dimensional position image map; one gathered bright point of the two-dimensional image corresponds to one crystal bar, the two-dimensional image is divided into areas according to the positions of the bright points, the areas are numbered, and one number corresponds to one crystal bar; all events in one numbered region are all events of the corresponding numbered bars which are excited by the radioactive source;
if the standard crystal array comprises 15x15 crystal bars, the two-dimensional position image has 225 regions and numbers,
the fourth step: counting the total event count in each region by adopting the integrated area values of the path A, the path B, the path C and the path D, namely counting the total event count measured by the corresponding SIPM chip after the corresponding numbered crystal bars are excited by the light;
and adding the four paths of integrals of the events in each crystal bar area A + B + C + D into the actually measured crystal bar deposition energy of the SIPM chip with each event, and accumulating the deposition energy.
In this embodiment, one region corresponds to one wafer strip.
The fifth step: judging the mode of an energy path: if the total count in the single crystal strip area is less than a set value, the problem of the energy path is represented, and the two-dimensional position image is represented as an obvious dim or lack of bright spots; comparing the difference with the average count of all single crystals;
and a sixth step: judging the way of the time trigger path: and counting the appearance position of the front edge of the energy spectrum of each single crystal, wherein the SIPM chip time trigger circuit output corresponding to the crystal with the larger appearance position of the front edge of the energy spectrum has a problem.
In the sixth step, a threshold matrix can be generated in advance, and each position crystal bar corresponds to a threshold;
firstly, generating a standard leading edge value matrix, obtaining a maximum test error value through multiple measurements, and superposing the maximum test error value on the standard leading edge value matrix;
Pthreshold value＝PStandard front edge value+XMaximum allowable deviation value*PUnit of
PThreshold value: representing a matrix of M by M decision thresholds
M × M represents: number of crystal strips in standard crystal array;
Pstandard front edge value: coupling W different normal SiPM arrays by using a fixed standard crystal array to obtain an average matrix of M by M leading edge positions;
Pmaximum allowable deviation value: coupling W different normal SiPM array plates by using a fixed crystal array to obtain an average matrix of a leading edge position and obtain a group of W M data, wherein the data is the difference value X between the leading edge position of each crystal strip and the average value, and counting the standard deviation sigma and the average value X of the group of difference valuesMaximum allowable deviation valueMean +3 σ;
Punit ofIs an M by M identity matrix;
if the time trigger circuit is higher than the threshold value, the time trigger circuit corresponding to the SiPM chip of the crystal bar is abnormal, and if the time trigger circuit is lower than the threshold value, the time trigger circuit corresponding to the SiPM chip of the crystal bar is normal.
In a specific application, as shown in fig. 2 and 6, if the corresponding SiPM chip does not actually have a standard out output, the two-dimensional position image map of the corresponding position is displayed to be nearly black in a counting way, and a million-level counting has an extremely low probability of entering an error counting area, but the difference magnitude is huge compared with the normal position, so that the position of the problem SiPM chip can be judged without performing subsequent algorithm calculation basically by naked eyes on the two-dimensional position image map.
However, when the energy path of a certain SiPM chip is in a path state, only the time trigger path has no signal output, all the SiPM chip trigger paths are added after cascade amplification, the crystal array has optical crosstalk phenomenon in the array after light emitting, the Fast out of the surrounding SiPM chips can generate small signals due to the crosstalk of large signals of surrounding crystal crosstalk light, and finally most signals can be triggered by other SiPM chips due to the addition of all the Fast out, so that whether the Fast out of the chips is normal or not is difficult to directly judge from a two-dimensional position image through a bright-dark state.
The height of a trigger signal obtained by crosstalk superposition is always lower than a complete signal without problems of the same photon quantity, when a trigger threshold value is low enough, the position of the front edge of a crystal strip energy spectrum corresponding to a problem chip can be distinguished from the energy spectrum of a single crystal strip from which the position is obviously higher than that of a normal crystal strip, as shown in fig. 6, an accumulation spectrogram of the problem single crystal strip with an array close to the center and an accumulation spectrogram of normal crystal strips around the problem crystal strip are shown in fig. 6, and for the time trigger path signal output of only cutting off one SiPM chip at the lower right corner, an energy path signal can be read normally.
The standard sample crystal array is coupled to the SiPM array, each single crystal strip range is identified through two-dimensional position images, spectrum accumulation is carried out on the case/event in each single crystal range, whether a time trigger circuit or an energy trigger circuit of a chip in the SiPM array has no output signal or not can be judged through energy spectrum counting of the single crystal strips and the position of the energy spectrum front edge, and the position of the chip in the array can be judged.
If the used crystal has self-decay performance similar to LYSO or LSO, the time trigger threshold is further lowered by adjusting the amplification factor of the circuit, the acquisition time is prolonged, the amount of acquisition cases is ensured, and the detection can be carried out without using a radioactive source. In a specific test, a LYSO crystal array consisting of 15x15 crystal strips can be used as a standard crystal for coupling with the SiPM array, the trigger threshold of the time path is set to be as low as possible, and the time trigger path is used for controlling the ADC acquisition card to acquire four paths of energy paths for output.
In this embodiment, the signals output by the SiPM chips in the SiPM array are divided and then resolved for summation, so that the number of output channels can be reduced on a large scale.
In the specific implementation mode, the time-triggered threshold is set as low as possible, the time-triggered threshold is used for controlling four energy paths acquired and output by an ADC acquisition card, the four signal waveforms are integrated and subjected to baseline deduction under the control of a computer, the four energy values of each case are calculated, and a two-dimensional position image of the crystal array is obtained by calculation through an Euler formula, as shown in FIG. 2. Each white aggregated bright spot in fig. 2 represents a corresponding crystal strip of the crystal array, and the right image in fig. 2 is a normal SiPM array measurement standard sample crystal array, so there are 225 bright spots in total in the image. All cases of each single crystal were obtained by dividing the two-dimensional position map. And accumulating the four paths of energy summation values of the cases to obtain each single crystal energy spectrum.
It can be seen from fig. 3 that the two-dimensional position images of the a and b silicon photomultiplier array are almost the same as the normal two-dimensional position image of the right image of fig. 2. Wherein, the image of the crystal bar in the array image white frame is slightly tiny and slightly lower in count, and Fast out of the corresponding SiPM chip is intentionally broken. b, the image in the white frame of the array image has no abnormality, but Fast out of a group of cascade SiPM chips corresponding to the area is short-circuited.
Since the energy path can work normally, as shown in fig. 6, in the a-array two-dimensional position image, the abnormal crystal bar (No.126) enclosed by the white frame and the energy spectrum of the normal crystal bar around the abnormal crystal bar correspond to the large peak of the energy spectrum accumulated by each crystal bar in the image, and the gamma peak value is correct and has no obvious deviation. No.126 (the number here is that a two-dimensional position image divides 225 crystal strip regions, each crystal strip is numbered according to the position), the position of the foremost starting point of the crystal strip energy spectrum obviously moves backwards, the Compton platform can be seen to be clamped, the frontmost position moves backwards about 14 tracks, the frontmost edges of the four-cycle crystal strips are all about 8 tracks, the frontmost edges of No.111 and No.127 sense that the energy spectrums are slightly influenced, and the other normal crystal strips can see that the Compton platform is completely exposed. Comparing the energy peak height of the single crystal accumulated spectrum with the number of the front edge appearance positions of the single crystal strip energy spectrum, the difference between the normal crystal strip energy spectrum and the abnormal crystal strip energy spectrum can be seen. Therefore, whether the time trigger circuit and the energy trigger circuit of the SiPM chip corresponding to the single crystal work normally can be judged by counting the energy spectrum count of the single crystal and the number of tracks appearing at the front edge of the energy spectrum.
The judgment is implemented in a threshold clamping mode: and if the height of the front edge of the energy spectrum is greater than a fixed value, the number of tracks at the position is the number of tracks at the front edge of the energy spectrum. FIGS. 4 and 5 show the number of tracks at the position of the energy spectrum front edge of the single crystal strip of the whole crystal array of the a and b arrays. From the energy spectrum front edge position trace values in fig. 4 and fig. 5, it can be seen that the front edge traces at the four corners and the center position have a certain distribution due to a certain difference of the positions of the crystal strips. In order to eliminate man-made interference and statistical interference, different silicon photomultiplier arrays can be coupled through fixed standard crystals for multiple measurements, the measured energy spectrum front edge values are averaged to obtain an average front edge channel number distribution array, the difference percentage between the energy spectrum front edge values and the average distribution array is used as a criterion for judgment, and the method can eliminate the interference caused by position distribution difference and different crystal differences.
Therefore, the SiPM chip without output of the event triggering circuit or the energy circuit can influence the overall detection efficiency and the time resolution performance of the SiPM array, and the problem chips can be screened out and repaired by the method, so that the performance of the SiPM array is ensured;
based on less electronic path acquisition and lower hardware cost, single measurement can detect whether the time trigger path and the energy path of the whole SiPM array are both normally output or not;
the detection efficiency is greatly improved, so that large-batch automatic detection and judgment can be realized, and the detection cost of the silicon photomultiplier array is reduced;
on the premise of increasing a certain single test time, LYSO or LSO crystal arrays with self-decay characteristics can be used for passive detection, so that the source cost and the detection condition requirements are reduced.
It should be noted that in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the terms first, second, third and the like are for convenience only and do not denote any order. These words are to be understood as part of the name of the component.
Furthermore, it should be noted that in the description of the present specification, the description of the term "one embodiment", "some embodiments", "examples", "specific examples" or "some examples", etc., means that a specific feature, structure, material or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, the claims should be construed to include preferred embodiments and all changes and modifications that fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention should also include such modifications and variations.
Claims (9)
1. An apparatus for detecting the on/off of a silicon photomultiplier array signal, comprising:
the system comprises a radioactive source, a standard crystal array coupled with a to-be-detected SiPM array, a filter circuit, a radio frequency amplification circuit, an ADC (analog to digital converter) acquisition device and a processing device;
the radioactive source is used for exciting the coupled scintillation crystal in the standard crystal array of the SiPM array to be detected to emit light so that the SiPM array to be detected outputs two types of signals;
the first end of the filter circuit is connected with the output end of the energy circuit of the SiPM array to be detected, the filter circuit is used for adding the energy outputs of all the SiPM chips in the SiPM array to be detected and outputting four energy signals, the first end of the radio frequency amplification circuit is connected with the output end of the time trigger circuit of the SiPM array to be detected, and the radio frequency amplification circuit is used for cascading amplifying and adding the time circuit output signals of all the SiPM chips in the SiPM array to be detected so as to output a time trigger signal;
the ADC acquisition device is connected with the second end of the filter circuit and the second end of the radio frequency amplification circuit, acquires four paths of energy signals based on one path of time trigger signal, and transmits the acquired four paths of energy signals to the processing device, so that the processing device generates two-dimensional position images for judging whether two paths of outputs of each SiPM chip in the SiPM array to be detected are abnormal or not based on the four paths of energy signals.
2. The device of claim 1, wherein the radiation source is a gamma radiation source;
the filter circuit includes: and the filter resistance network is used for summing signals output by the output ends of the energy paths, and outputs four paths of energy signals.
3. The apparatus according to claim 1, wherein the processing apparatus is specifically configured to:
generating a two-dimensional position image of the standard crystal array by utilizing an Euler equation based on the four paths of energy signals; whether an energy path of the SiPM chip corresponding to the display bright point at each position on the two-dimensional position image is abnormal or not;
if at least one position has no bright spot or the bright spot is abnormal, determining that the energy path of the SiPM chip corresponding to the position is abnormal;
acquiring energy spectrum information of a single crystal strip based on the two-dimensional position image; and determining whether the time trigger path of the corresponding SiPM chip is abnormal or not according to the energy spectrum information of the crystal bar.
4. The apparatus of claim 1, wherein the radio frequency amplification circuit comprises: the cascade circuit, the summing circuit and the comparator are connected in sequence; a first set value corresponding to the time trigger signal is preset in the comparator;
if the time trigger signal output by the summing circuit is greater than a first set value, the comparator outputs the time trigger signal, otherwise, the time trigger signal is not output; the time trigger signal output by the comparator is used as the trigger signal of the ADC acquisition device for acquiring the energy signal;
the first set value is determined according to a trigger value when a time trigger circuit of at least one SiPM chip in the SiPM array to be detected is abnormal, and is a numerical value smaller than the trigger value.
5. The apparatus of claim 1, wherein the standard crystal array and the under-test SiPM array are structurally identical;
alternatively, the standard crystal array is a 15 × 15 LSO type crystal array with self-decay characteristics.
6. A detection method based on the device for detecting the on-off of the silicon photomultiplier array signal of any one of claims 1 to 5, the method comprising:
s10, coupling the normal SiPM array with a standard crystal array; setting a time trigger threshold value of a time trigger path in the ADC acquisition device; the ADC acquisition device is respectively connected with the output end of the energy circuit of the normal SiPM array and the output end of the time trigger circuit through a filter circuit and a radio frequency amplification circuit;
after the radioactive source is excited, the ADC acquisition device acquires four paths of energy signals and transmits the energy signals to the processing device, and the processing device integrates and baseline-buckles waveforms of the four paths of energy signals to acquire a first two-dimensional position image of a normal SiPM array passing through a standard crystal array and standard information of a spectrum front edge in energy spectrum information of a single crystal strip in the standard crystal array;
s20, coupling the standard crystal array with a SiPM array to be detected;
after the radioactive source is excited, the ADC acquisition device acquires four paths of energy signals and transmits the energy signals to the processing device; the data volume of the ADC acquisition device acquired twice is the same;
the processing device integrates and baseline-buckles the waveforms of the four paths of energy signals to obtain a second two-dimensional position image of the standard crystal array passing through the to-be-detected SiPM array and energy spectrum information of a single crystal bar in the standard crystal array;
s30, comparing the second two-dimensional position image with the first two-dimensional position image to determine whether the energy path of each SiPM chip in the SiPM array to be detected is abnormal;
and comparing the energy spectrum leading edge information of the energy spectrum information of the single crystal strip in the S20 with the standard information to determine whether the time trigger circuit of the corresponding SiPM chip is abnormal.
7. The detection method according to claim 6, wherein S30 includes:
calculating four-way energy values of each case, and calculating by using an Euler formula to obtain a two-dimensional position image of the standard crystal array; each bright spot in the two-dimensional position image represents a crystal strip corresponding to the standard crystal array;
comparing the two-dimensional position image corresponding to the SiPM array to be detected with the two-dimensional position image corresponding to the normal SiPM array, and determining whether the energy path of each SiPM chip in the SiPM array to be detected is abnormal or not;
and dividing all events of each crystal strip in the two-dimensional position image, and adding N paths of energy of each crystal strip to obtain energy spectrum information of a single crystal strip.
8. The detection method according to claim 6, wherein when N is 4, S30 includes:
the first step is as follows: integrating the fixed length of the energy signal waveform to obtain a signal integral area, deducting a baseline of the waveform signal from the integral area to obtain integral area values of an A path, a B path, a C path and a D path;
the second step is that: obtaining x and y values of the two-dimensional position image through an Euler equation by adopting an A path integral value, a B path integral value, a C path integral value and a D path integral value obtained by integrating and deducting a baseline;
specifically, the euler formula is:
X＝(A+D)/(A+B+C+D)；
Y＝(C+D)/(A+B+C+D)；
or, X ═ (a + B)/(a + B + C + D);
Y＝(A+D)/(A+B+C+D)；
the third step: dividing the two-dimensional position image map; one gathered bright point of the two-dimensional image corresponds to one crystal bar, the two-dimensional image is divided into areas according to the positions of the bright points, the areas are numbered, and one number corresponds to one crystal bar; all events in one numbered region are all events of the corresponding numbered bars which are excited by the radioactive source;
if the standard crystal array comprises 15x15 crystal bars, the two-dimensional position image has 225 regions and numbers,
the fourth step: counting the total event count in each region by adopting the integrated area values of the path A, the path B, the path C and the path D, namely counting the total event count measured by the corresponding SiPM chip after the corresponding numbered crystal bars are excited by the light;
adding the four paths of integrals of the events in each crystal strip area, namely A + B + C + D, into the actually measured crystal strip deposition energy of the SiPM chip of each event, and accumulating the deposition energy;
the fifth step: judging the mode of an energy path: if the total count in the single crystal strip area is less than a set value, the problem of the energy path is represented, and the two-dimensional position image is represented as an obvious dim or lack of bright spots; comparing the difference with the average count of all single crystals;
and a sixth step: judging the way of the time trigger path: and counting the appearance position of the front edge of the energy spectrum of each single crystal, wherein the output of the SiPM chip time trigger circuit corresponding to the crystal with the larger appearance position of the front edge of the energy spectrum has problems.
9. The detection method of claim 8, wherein determining the manner of time-triggered paths further comprises:
each position crystal bar corresponds to a threshold value, and a threshold value matrix is generated;
firstly, generating a standard leading edge value matrix, obtaining a maximum test error value through multiple measurements, and superposing the maximum test error value on the standard leading edge value matrix;
Pthreshold value＝PStandard front edge value+XMaximum allowable deviation value*PUnit of
PThreshold value: representing a matrix of M by M decision thresholds
M × M represents: number of crystal strips in standard crystal array;
Pstandard front edge value: coupling W different normal SiPM arrays by using a fixed standard crystal array to obtain an average matrix of M by M leading edge positions;
Pmaximum allowable deviation value: coupling W different normal SiPM array plates by using a fixed crystal array to obtain an average matrix of a leading edge position and obtain a group of W M data, wherein the data is the difference value X between the leading edge position of each crystal strip and the average value, and counting the standard deviation sigma and the average value X of the group of difference valuesMaximum allowable deviation valueMean +3 σ;
Punit ofIs an M by M identity matrix;
if the time trigger circuit is higher than the threshold value, the time trigger circuit corresponding to the SiPM chip of the crystal bar is abnormal, and if the time trigger circuit is lower than the threshold value, the time trigger circuit corresponding to the SiPM chip of the crystal bar is normal.
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