CN114383514B - CMOS contact displacement sensor and measuring method - Google Patents
CMOS contact displacement sensor and measuring method Download PDFInfo
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- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 10
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 9
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- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 6
- IBXMKLPFLZYRQZ-UHFFFAOYSA-N 1,5-diphenylpenta-1,4-dien-3-one;palladium Chemical compound [Pd].[Pd].C=1C=CC=CC=1C=CC(=O)C=CC1=CC=CC=C1 IBXMKLPFLZYRQZ-UHFFFAOYSA-N 0.000 claims description 5
- CTFNJPHOILFHEL-UHFFFAOYSA-N CC1=C(C=CC=C1)[P] Chemical compound CC1=C(C=CC=C1)[P] CTFNJPHOILFHEL-UHFFFAOYSA-N 0.000 claims description 5
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- 239000013078 crystal Substances 0.000 claims description 5
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 5
- CCRMAATUKBYMPA-UHFFFAOYSA-N trimethyltin Chemical compound C[Sn](C)C.C[Sn](C)C CCRMAATUKBYMPA-UHFFFAOYSA-N 0.000 claims description 5
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- AAMATCKFMHVIDO-UHFFFAOYSA-N azane;1h-pyrrole Chemical compound N.C=1C=CNC=1 AAMATCKFMHVIDO-UHFFFAOYSA-N 0.000 description 2
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- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 108010076830 Thionins Proteins 0.000 description 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- 239000002105 nanoparticle Substances 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
The invention provides a CMOS (complementary metal oxide semiconductor) contact displacement sensor, which belongs to a displacement sensing device and comprises a processor module, a CMOS image sensing module, a constant current control module, an input/output module and a power supply module for supplying power to the modules, wherein the CMOS image sensing module is electrically connected with the constant current control module, the constant current control module and the input/output module are respectively electrically connected with the processor module, the CMOS image sensing module comprises a photosensitive unit, a CMOS logic circuit and a lens, the CMOS logic circuit is used for processing sensed light into electric signal data, the photosensitive unit comprises an image sensing unit array, a row driver, a column driver, a time sequence control logic and an AD converter, the lens is prepared from modified polymethyl methacrylate, and an anti-reflection film is arranged on the lens; the invention further improves the measurement accuracy of the CMOS contact displacement sensor by improving the refractive index of the lens.
Description
Technical Field
The invention relates to the field of displacement sensing devices, in particular to a CMOS (complementary metal oxide semiconductor) contact displacement sensor and a measuring method.
Background
The CMOS laser displacement sensor adopts a triangular method measuring principle, utilizes a linear array CMOS device as an optical receiving device, has the characteristics of high measuring precision, short measuring time and the like, and is suitable for industrial field application. The lens is used as a key component of the CMOS image sensor, is used for preventing the light-gathering amount of each pixel point from being reduced along with the miniaturization, and is required to have high refractive index and light transmittance for improving the light extraction efficiency and light-gathering property, but the refractive index of the polymer material used in the prior art is usually relatively low and is between 1.3 and 1.7, which is difficult to meet the practical requirement, so that in order to realize the high refractive index, a large amount of inorganic nanoparticles are often required to be added, which reduces the storage stability and mechanical property of the composite material to a certain extent, and thus the requirement of practical application cannot be met.
Disclosure of Invention
In view of the above problems, the present invention provides a CMOS contact displacement sensor and a measuring method.
The purpose of the invention is realized by adopting the following technical scheme:
a CMOS contact displacement sensor comprises a processor module, a CMOS image sensing module, a constant current control module, an input/output module and a power supply module for supplying power to the CMOS image sensing module, wherein the CMOS image sensing module is electrically connected with the constant current control module, the constant current control module and the input/output module are respectively electrically connected with the processor module, the CMOS image sensing module comprises a photosensitive unit, a CMOS logic circuit and a lens, the CMOS logic circuit is used for processing sensed light into electric signal data, the photosensitive unit comprises an image sensing unit array, a row driver, a column driver, a time sequence control logic and an AD converter, the lens is prepared from modified polymethyl methacrylate, and an antireflection film is arranged on the lens.
Preferably, the modified polymethyl methacrylate includes polymethyl methacrylate, a modified polymer blend, and an inorganic filler.
Preferably, the mass ratio of the polymethyl methacrylate to the modified polymer blend to the inorganic filler is 35: (6-12): (3-5).
Preferably, the modified polymer blend is a modified dipyrrolopyrrole dione polymer, and the preparation method of the modified dipyrrolopyrrole dione polymer comprises the following steps:
(1) weighing dithienyl-pyrrolopyrrole dione, dissolving the dithienyl-pyrrolopyrrole dione in anhydrous dimethylformamide, fully stirring and mixing, adding a dimethylformamide solution of iodinated alkane, adding potassium carbonate crystal as a catalyst, stirring and reacting for 4-6h, adding methanol for dilution after the reaction is finished, collecting precipitate, washing and drying to obtain a product A;
(2) weighing dithienyl-pyrrolopyrrole dione, dissolving in tetrahydrofuran, dropwise adding a tetrahydrofuran solution of sulfur chloride while stirring under the conditions of an ice salt water bath and a nitrogen protective atmosphere, keeping the temperature and stirring for reaction for 0.5-1h after the dropwise adding is finished, adding deionized water for dilution, separating and precipitating after the temperature is restored to room temperature, washing with diethyl ether, and recrystallizing with a chloroform-methanol mixed solution to obtain a product B;
(3) mixing and dissolving the product A and the product B in chloroform, adding N-bromosuccinimide under the condition of ice-water bath, carrying out heat preservation and stirring reaction for 1-2h, carrying out reduced pressure evaporation to remove the solvent after the reaction is finished, adding dried chlorobenzene for dilution, adding bis (trimethyltin), dibenzylidene acetone dipalladium and tris (o-methyl) phenylphosphor after fully stirring and mixing, sealing the reaction system after fully mixing again, replacing the reaction atmosphere with argon, carrying out heating and stirring reaction under the microwave condition, wherein the microwave power is 300-500W, the heating temperature is 100-200 ℃, the stirring reaction time is 50-60min, cooling after the reaction is finished, adding trichloroethylene for dilution after cooling, transferring into a methanol solution after dilution, fully stirring until no precipitate is separated out, separating the precipitate, washing with methanol and deionized water in sequence, vacuum drying to obtain the final product.
Preferably, the molar ratio of the dithienyl-pyrrolopyrroledione to the iodinated alkane to the potassium carbonate crystals in step (1) is 1: 2: (0.01-0.02); the molar ratio of the dithienyl-pyrrolopyrroledione to the sulfur chloride in the step (2) is 2: 1; the mass ratio of the product A to the product B is (2-3): 1, the molar ratio of the dithienyl-pyrrolopyrroledione to the N-bromosuccinimide, the bis (trimethyltin), the dibenzylideneacetone dipalladium, and the tris (o-methyl) phenylphosphorus in steps (1) and (2) is 1: 1: (0.01-0.02): (0.05-0.1): (0.04-0.08).
Preferably, the inorganic filler is TeO 2 -Bi 2 O 3 -Nb 2 O 5 Nano-ceramics, said TeO 2 And Bi 2 O 3 、Nb 2 O 5 In a molar ratio of 15: (2.5-3.5): (1.5-2.5), the preparation method of the nano ceramic comprises the following steps:
respectively weighing TeO with the purity of not less than 99.99 percent according to the proportion 2 、Bi 2 O 3 And Nb 2 O 5 And adding the mixture into an alumina crucible after mixing, heating to 850-900 ℃, preserving heat for 15-30min to obtain a mixed melt, pouring the mixed melt into a mold for molding, annealing at 400 ℃ of 300-6 h to eliminate internal stress, and performing heat treatment at 450 ℃ of 440-2 h after crushing.
Preferably, the power module includes a power supply circuit and a feedback circuit connected to an output terminal of the power supply circuit.
Preferably, the input/output module comprises an analog quantity output unit, the analog quantity output unit is a current and voltage analog quantity output control circuit, and the current and voltage analog quantity output control circuit is used for outputting a current analog quantity of 4-20mA and/or a voltage analog quantity of 0-5 VDC.
Preferably, the processor module is a 32-bit high-speed processor, the sensor further comprises a human-computer interface module electrically connected with the processor module, the human-computer interface module comprises a 16-bit processor, a multi-bit nixie tube display screen, an operation key and a data storage unit, the multi-bit nixie tube display screen, the operation key and the data storage unit are respectively electrically connected with the 16-bit processor, and the 16-bit processor is electrically connected with the processor module.
Another objective of the present invention is to provide a method for measuring displacement with the CMOS contact displacement sensor.
The invention has the beneficial effects that:
aiming at the problem that the refractive index and the light transmittance of a lens used for a CMOS image sensor are not high in the prior art, the high-light-transmittance polymethyl methacrylate is modified on the basis of the high-light-transmittance polymethyl methacrylate to improve the refractive index and the light transmittance of the lens, specifically, the invention improves the refractive index of a modified product by doping a dipyrrolopyrrole dione modified polymer based on a sulfur-containing thiophene group with high molar refractive index, and improves the crosslinking degree and the polymerization degree by introducing a disulfide group on pyrrole nitrogen, and simultaneously introduces thionin to further improve the optical performance of the lens, so as to further improve the refractive index and ensure the storage stability and the mechanical performance, the refractive light transmittance of the lens can be well improved by adding a small amount of nano ceramic additive and sintering the glass material based on Te-Bi-Nb blend oxide, specifically, dithienyl-pyrrolopyrroledione is used as a precursor, long-chain alkyl and disulfide groups are respectively introduced to pyrrole nitrogen through alkane iodide and sulfur chloride, the blending compatibility and the polymerization crosslinking activity are improved, and then a polymerization product is obtained through polymerization crosslinking of a brominated monomer.
Detailed Description
The invention is further described with reference to the following examples.
Example 1
The embodiment relates to a CMOS (complementary metal oxide semiconductor) contact displacement sensor, which comprises a processor module, a CMOS image sensing module, a constant current control module, an input/output module and a power supply module for supplying power to the modules, wherein the CMOS image sensing module is electrically connected with the constant current control module, the constant current control module and the input/output module are respectively electrically connected with the processor module, the CMOS image sensing module comprises a photosensitive unit, a CMOS logic circuit and a lens, the CMOS logic circuit is used for processing sensed light into electric signal data, the photosensitive unit comprises an image sensing unit array, a row driver, a column driver, a time sequence control logic and an AD (analog-to-digital) converter, the lens is prepared from modified polymethyl methacrylate, and an antireflection film is arranged on the lens;
the power supply module comprises a power supply circuit and a feedback circuit connected with the output end of the power supply circuit;
the input and output module comprises an analog quantity output unit, the analog quantity output unit is a current and voltage analog quantity output control circuit, and the current and voltage analog quantity output control circuit is used for outputting a current analog quantity of 4-20mA and/or a voltage analog quantity of 0-5 VDC;
the processor module is a 32-bit high-speed processor, the sensor further comprises a human-computer interface module electrically connected with the processor module, the human-computer interface module comprises a 16-bit processor, a multi-bit nixie tube display screen, operation keys and a data storage unit, the multi-bit nixie tube display screen, the operation keys and the data storage unit are respectively electrically connected with the 16-bit processor, and the 16-bit processor is electrically connected with the processor module;
the modified polymethyl methacrylate comprises polymethyl methacrylate and a modified polymer blend, wherein the mass ratio of the polymethyl methacrylate to the modified polymer blend is 35: 8: (ii) a
The modified co-polymer is a modified dipyrrolo-pyrrole-dione polymer, and the preparation method of the modified dipyrrolo-pyrrole-dione polymer comprises the following steps:
(1) weighing 40mmol of dithienyl-pyrrolopyrrole dione, dissolving in 100mL of anhydrous dimethylformamide, fully stirring and mixing, adding a dimethylformamide solution of dodecane iodide (80mmol), adding 0.4mmol of potassium carbonate crystals as a catalyst, stirring and reacting for 4-6h, adding methanol for dilution after the reaction is finished, collecting the precipitate, washing and drying to obtain a product A;
(2) weighing 40mmol of dithienyl-pyrrolopyrroledione, dissolving in 80mL of tetrahydrofuran, dropwise adding a tetrahydrofuran solution of sulfur chloride (20mmol) while stirring under the conditions of an ice salt water bath and a nitrogen protective atmosphere, keeping the temperature after dropwise adding, stirring, reacting for 0.5-1h, adding 100mL of deionized water for diluting, separating and precipitating after returning to room temperature, washing with diethyl ether, and recrystallizing with a chloroform-methanol mixed solution to obtain a product B;
(3) mixing and dissolving the product A and the product B in trichloromethane, adding 80mmol of N-bromosuccinimide under the condition of ice-water bath, carrying out heat preservation and stirring reaction for 1-2h, carrying out reduced pressure evaporation to remove the solvent after the reaction is finished, adding dried chlorobenzene for dilution, fully stirring and mixing, adding 0.8mmol of bis (trimethyltin), 4.8mmol of dibenzylidene acetone dipalladium and 4.8mmol of tri (o-methyl) phenylphosphor, fully mixing again, sealing the reaction system, replacing the reaction atmosphere with argon, carrying out heating and stirring reaction under the microwave condition, carrying out the microwave power of 300-500W, heating the temperature of 100-200 ℃, stirring the reaction time of 50-60min, cooling after the reaction is finished, adding trichloroethylene for dilution, transferring into a methanol solution after the dilution, fully stirring until no precipitate is separated, separating the precipitate, washing with methanol and deionized water in turn, vacuum drying to obtain;
example 2
The lens is prepared by the same method as that of example 1, and is prepared from modified polymethyl methacrylate, wherein the modified polymethyl methacrylate comprises polymethyl methacrylate, modified polymer blend and inorganic filler, and the mass ratio of the polymethyl methacrylate to the modified polymer blend to the inorganic filler is 35: 8: 3;
the preparation method of the modified polymer blend is the same as that of example 1;
the inorganic filler is nano silicon dioxide or nano titanium dioxide.
Example 3
A lens is prepared from modified polymethyl methacrylate, wherein the modified polymethyl methacrylate comprises polymethyl methacrylate, modified polymer blend and inorganic filler, and the mass ratio of the polymethyl methacrylate to the modified polymer blend to the inorganic filler is 35: 8: 3;
the preparation method of the modified polymer blend is the same as that of example 1;
the inorganic filler is TeO 2 -Bi 2 O 3 -Nb 2 O 5 The nano-ceramic is prepared by the following steps of,the TeO 2 And Bi 2 O 3 、Nb 2 O 5 The molar ratio of (A) to (B) is 15: 3: 2, the preparation method of the nano ceramic comprises the following steps:
respectively weighing TeO with the purity not less than 99.99 percent according to the parts by weight 2 、Bi 2 O 3 And Nb 2 O 5 And adding the mixture into an alumina crucible after mixing, heating to 850-900 ℃, preserving heat for 15-30min to obtain a mixed melt, pouring the mixed melt into a mold for molding, annealing at 400 ℃ of 300-6 h to eliminate internal stress, and performing heat treatment at 450 ℃ of 440-2 h after crushing.
The lens properties of examples 1-3 were as follows:
| example 1 | Example 2 | Example 3 | |
| 5% weight loss temperature (deg.C, N) 2 ) | 436 | 448 | 482 |
| Glass transition temperature (. degree. C.) | 182 | 186 | 193 |
| 450nm transmittance (%) | 73 | 74 | 77 |
| Refractive index of 632.8nm | 1.7176 | 1.7358 | 1.8114 |
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the protection scope of the present invention, although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (5)
1. A CMOS contact displacement sensor is characterized by comprising a processor module, a CMOS image sensing module, a constant current control module, an input/output module and a power supply module for supplying power to the modules, wherein the CMOS image sensing module is electrically connected with the constant current control module, the constant current control module and the input/output module are respectively electrically connected with the processor module, the CMOS image sensing module comprises a photosensitive unit, a CMOS logic circuit and a lens, the CMOS logic circuit is used for processing sensed light into electric signal data, the photosensitive unit comprises an image sensing unit array, a row driver, a column driver, a time sequence control logic and an AD converter, the lens is prepared from modified polymethyl methacrylate, and an antireflection film is arranged on the lens;
the modified polymethyl methacrylate comprises polymethyl methacrylate, a modified blend polymer and an inorganic filler, and the mass ratio of the modified polymethyl methacrylate to the inorganic filler is 35: (6-12): (3-5);
the modified blend polymer is a modified dipyrrolopyrrole diketone polymer, and the preparation method of the modified dipyrrolopyrrole diketone polymer comprises the following steps:
(1) weighing dithienyl-pyrrolopyrrole dione, dissolving the dithienyl-pyrrolopyrrole dione in anhydrous dimethylformamide, fully stirring and mixing, adding a dimethylformamide solution of iodinated alkane, adding potassium carbonate crystal as a catalyst, stirring and reacting for 4-6h, adding methanol for dilution after the reaction is finished, collecting precipitate, washing and drying to obtain a product A;
(2) weighing dithienyl-pyrrolopyrrole dione, dissolving in tetrahydrofuran, dropwise adding a tetrahydrofuran solution of sulfur chloride while stirring under the conditions of an ice salt water bath and a nitrogen protective atmosphere, keeping the temperature and stirring for reaction for 0.5-1h after the dropwise adding is finished, adding deionized water for dilution, separating and precipitating after the temperature is restored to room temperature, washing with diethyl ether, and recrystallizing with a chloroform-methanol mixed solution to obtain a product B;
(3) mixing and dissolving the product A and the product B in trichloromethane, adding N-bromosuccinimide under the condition of ice-water bath, carrying out heat preservation and stirring reaction for 1-2h, carrying out reduced pressure evaporation to remove the solvent after the reaction is finished, adding dried chlorobenzene for dilution, fully stirring and mixing, adding bis (trimethyltin), dibenzylidene acetone dipalladium and tris (o-methyl) phenylphosphorus, fully mixing again, sealing a reaction system, replacing the reaction atmosphere with argon, carrying out heating and stirring reaction under the microwave condition, wherein the microwave power is 300 DEG and the heating temperature is 200 DEG, the stirring reaction time is 50-60min, cooling after the reaction is finished, adding trichloroethylene for dilution after cooling, transferring into a methanol solution after dilution, fully stirring until no precipitate is separated out, separating the precipitate, and washing with methanol and deionized water in sequence, vacuum drying to obtain the final product;
in the step (1), the molar ratio of the dithienyl-pyrrolopyrrole-dione to the iodinated alkane to the potassium carbonate crystal is 1: 2: (0.01-0.02); the molar ratio of the dithienyl-pyrrolopyrroledione to the sulfur chloride in the step (2) is 2: 1; the mass ratio of the product A to the product B is (2-3): 1, the molar ratio of the N-bromosuccinimide, the bis (trimethyltin), the dibenzylideneacetone dipalladium and the tris (o-methyl) phenylphosphorus is 1: (0.01-0.02): (0.05-0.1): (0.04-0.08);
the inorganic filler is TeO 2 -Bi 2 O 3 -Nb 2 O 5 Nano-ceramics, said TeO 2 And Bi 2 O 3 、Nb 2 O 5 The molar ratio of (A) to (B) is 15: (2.5-3.5): (1.5-2.5), the preparation method of the nano ceramic comprises the following steps:
respectively weighing TeO with the purity not less than 99.99 percent according to the parts by weight 2 、Bi 2 O 3 And Nb 2 O 5 And adding the mixture into an alumina crucible after mixing, heating to 850-900 ℃, preserving heat for 15-30min to obtain a mixed melt, pouring the mixed melt into a mold for molding, annealing at 400 ℃ of 300-6 h to eliminate internal stress, and performing heat treatment at 450 ℃ of 440-2 h after crushing.
2. The CMOS contact displacement sensor of claim 1, wherein the power module comprises a power supply circuit, and a feedback circuit coupled to an output of the power supply circuit.
3. The CMOS contact displacement sensor of claim 1, wherein the input-output module comprises an analog quantity output unit, the analog quantity output unit is a current and voltage analog quantity output control circuit, and the current and voltage analog quantity output control circuit is used for outputting a current analog quantity of 4-20mA and/or a voltage analog quantity of 0-5 VDC.
4. The CMOS contact displacement sensor according to claim 1, wherein the processor module is a 32-bit high-speed processor, the sensor further comprises a human-machine interface module electrically connected to the processor module, the human-machine interface module comprises a 16-bit processor, a multi-bit nixie tube display screen, operation keys, and a data storage unit, the multi-bit nixie tube display screen, the operation keys, and the data storage unit are respectively electrically connected to the 16-bit processor, and the 16-bit processor is electrically connected to the processor module.
5. A displacement measuring method, characterized in that it is measured with a CMOS contact displacement sensor according to any one of claims 1 to 4.
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