CN114377929A - Transducer probe, manufacturing method and medical equipment - Google Patents
Transducer probe, manufacturing method and medical equipment Download PDFInfo
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- CN114377929A CN114377929A CN202011115530.2A CN202011115530A CN114377929A CN 114377929 A CN114377929 A CN 114377929A CN 202011115530 A CN202011115530 A CN 202011115530A CN 114377929 A CN114377929 A CN 114377929A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/06—Measuring blood flow
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
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Abstract
The application provides a transducer probe, a manufacturing method and medical equipment. The transducer probe includes a base chip, an insulating layer, a dual piezoelectric layer, and a conductive component. The insulating layer covers the upper surface of the substrate chip. The double piezoelectric layers are arranged on the upper surface of the insulating layer and comprise a pressure layer, an ultrasonic layer and an isolating layer which is positioned between the pressure layer and the ultrasonic layer and can shield signal interference between the ultrasonic layer and the pressure layer; the ultrasonic layer is located above the pressure layer. The conductive assembly comprises a first conductive assembly for electrically connecting the substrate chip and the pressure layer and a second conductive assembly for electrically connecting the substrate chip and the ultrasonic layer. The pressure layer with pressure detection and the ultrasonic layer with the ultrasonic imaging function are arranged in a transducer probe structure, and pressure signals and ultrasonic signals are synchronously and independently detected, so that ultrasonic imaging can be carried out while pressure detection is carried out, the functions of products are expanded, and application scenes are widened.
Description
Technical Field
The application relates to the technical field of transducers, in particular to a transducer probe and medical equipment using the transducer probe.
Background
A pressure transducer is an energy conversion device that is capable of sensing a pressure signal and converting the pressure signal into an electrical signal. The core component of the pressure transducer is a pressure sensitive element, such as a piezoelectric wafer, and various pressure transducers are widely applied to the fields of industry, life and medical treatment.
An ultrasonic transducer is an energy conversion device that converts alternating electrical signals into acoustic signals or external acoustic signals into electrical signals in the ultrasonic frequency range. Due to the fact that the ultrasonic waves have penetrability, the ultrasonic waves can penetrate through the surface of an object, and the structure inside the object can be detected in a nondestructive mode through the change of echo signals of the ultrasonic waves when the ultrasonic waves encounter interfaces and obstacles.
When the use scene of the pressure transducer and the ultrasonic transducer is needed, the pressure transducer and the ultrasonic transducer respectively carry out corresponding detection. Changing different detection devices will inevitably take more instrument installation time and detection time. Since the core components of the pressure transducer and the ultrasonic transducer are pressure sensitive elements and are used for detecting signals with different frequencies, how to provide a detection device with both the pressure transducer and the ultrasonic transducer becomes a focus of research in the field.
Disclosure of Invention
An object of the embodiment of the application is to provide a transducer probe, which has the functions of pressure detection and ultrasonic imaging, can expand the functions of products, and broadens the application range.
In a first aspect, a transducer probe is provided, comprising:
a substrate chip;
an insulating layer covering the upper surface of the substrate chip;
the double piezoelectric layer is arranged on the upper surface of the insulating layer and comprises a pressure layer, an ultrasonic layer and an isolating layer which is positioned between the pressure layer and the ultrasonic layer and can shield signal interference between the ultrasonic layer and the pressure layer; the ultrasonic layer is positioned above the pressure layer;
and the conductive assembly comprises a first conductive assembly used for electrically connecting the substrate chip and the pressure layer and a second conductive assembly used for electrically connecting the substrate chip and the ultrasonic layer.
In one implementable aspect, the dual piezoelectric layer comprises:
the first electrode layer is arranged on the upper surface of the insulating layer, has an area smaller than that of the insulating layer, and comprises a first electrode main body and a first support rib; the first support rib is electrically connected with the first electrode main body and is used as a leading-out end of the first electrode main body;
the pressure piezoelectric layer is arranged on the insulating layer and covers the first electrode layer, and a plurality of piezoelectric transducer units which are arranged in an array are arranged on the pressure piezoelectric layer;
an intermediate layer disposed on an upper surface of the pressure piezoelectric layer and having an area smaller than that of the pressure piezoelectric layer;
an ultrasonic piezoelectric layer disposed on and covering the intermediate layer for generating an ultrasonic signal;
the fourth electrode layer is arranged on the upper surface of the ultrasonic piezoelectric layer, has an area smaller than that of the ultrasonic piezoelectric layer, and comprises a fourth electrode main body and fourth ribs; the fourth rib is electrically connected with the fourth electrode main body and is used as a leading-out end of the fourth electrode main body;
the intermediate layer is configured to: shielding signal interference between the ultrasonic piezoelectric layer and the pressure piezoelectric layer, forming the pressure layer with the pressure piezoelectric layer and the first electrode layer, and transmitting a pressure signal generated by the pressure piezoelectric layer to the base chip; and the ultrasonic piezoelectric layer and the fourth electrode layer form the ultrasonic layer and transmit an ultrasonic signal generated by the ultrasonic piezoelectric layer to the substrate chip.
In one embodiment, the intermediate layer comprises:
a second electrode layer including a second electrode main body and second ribs; the second support rib is electrically connected with the second electrode main body and is used as a leading-out end of the second electrode main body; the second electrode layer is positioned right above the first electrode layer;
the part of the ultrasonic piezoelectric layer, which is in contact with the second electrode layer, is polarized, and the part of the ultrasonic piezoelectric layer, which is in contact with the pressure piezoelectric layer, is not polarized.
In another embodiment, the intermediate layer comprises:
the second electrode layer is arranged on the upper surface of the pressure piezoelectric layer, has an area smaller than that of the pressure piezoelectric layer, and comprises a second electrode main body and second ribs; the second support rib is electrically connected with the second electrode main body and is used as a leading-out end of the second electrode main body;
the isolation layer;
the third electrode layer is positioned above the isolating layer and comprises a third electrode main body and a third rib, and the third rib is electrically connected with the third electrode main body and is used as a leading-out end of the third electrode main body; the ultrasonic piezoelectric layer is arranged on the isolation layer and covers the third electrode layer;
the first electrode layer and the second electrode layer are used for transmitting the pressure signal generated by the piezoelectric transducer unit to the substrate chip, and the third electrode layer and the fourth electrode layer are used for transmitting the ultrasonic signal generated by the ultrasonic transducer unit to the substrate chip.
In one embodiment, the base chip is provided with a first contact point, a second contact point and a fourth contact point;
the first contact point is connected with the first support rib through the first conductive column; the second contact point is connected with the second support rib through a second conductive column; the fourth contact point is connected with the fourth rib through a fourth conductive column;
the first conductive column, the second conductive column and the fourth conductive column penetrate through the double piezoelectric layer and avoid the first electrode layer, the second electrode layer and the fourth electrode layer;
the first contact point, the first conductive column, the second contact point and the second conductive column form the first conductive assembly; the second contact point, the second conductive pillar, the fourth contact point and the fourth conductive pillar constitute the second conductive assembly.
In an implementable aspect, a cross-sectional area of the first conductive pillar is smaller than a cross-sectional area of the first stiffener; the sectional area of the second conductive column is smaller than that of the second support rib; the sectional area of the fourth conductive column is smaller than that of the third ribs.
In an implementation, the first electrode layer, the fourth electrode layer, the second electrode layer in the intermediate layer, or the second electrode layer in the intermediate layer and the third electrode layer are etched with an excitation layer.
In one embodiment, the transducer probe further comprises a protective layer disposed above the ultrasonic piezoelectric layer and covering the fourth electrode layer;
in one embodiment, the thickness of the ultrasonic piezoelectric layer is different from the thickness of the pressure piezoelectric layer.
According to a second aspect of the present application, there is also provided a medical device comprising a transducer probe constructed as described in any one of the above.
According to a third aspect of the present application, there is also provided a method of fabricating a transducer probe, comprising:
forming a substrate chip based on a CMOS process;
forming an insulating layer on the surface of the substrate chip;
depositing a pressure layer, an isolation layer and an ultrasonic layer on the surface of the insulating layer from bottom to top in sequence; the isolation layer is used for shielding signal interference between the ultrasonic layer and the pressure layer; the pressure layer, the isolation layer and the ultrasonic layer form a double-piezoelectric layer;
disposing a first conductive component electrically connecting the base chip and the pressure layer between the base chip and the pressure layer, and disposing a second conductive component for electrically connecting the base chip and the ultrasonic layer between the base chip and the ultrasonic layer; the first and second conductive components constitute conductive components of the transducer probe.
In one embodiment, the manufacturing process of the dual piezoelectric layer comprises:
manufacturing the piezoelectric layer: depositing a layer of metal material on the surface of the insulating layer to serve as the first electrode layer; depositing a pressure piezoelectric layer on the insulating layer and the first electrode layer; depositing a layer of metal material on the pressure piezoelectric layer as a second electrode layer;
manufacturing the isolation layer: depositing an isolation layer on the second electrode layer, wherein the thickness of the isolation layer is odd times of the wavelength of the quarter of the ultrasonic wave;
manufacturing the ultrasonic layer: depositing a layer of metal material on the isolation layer to serve as a third electrode layer; coating the ultrasonic piezoelectric layer over the third electrode layer; the part of the ultrasonic piezoelectric layer, which is in contact with the third electrode layer, is polarized, and the part, which is not in contact with the third electrode layer, is not polarized; and depositing a layer of metal material on the ultrasonic piezoelectric layer to serve as a fourth electrode layer.
In another embodiment, the process flow of manufacturing the dual piezoelectric layer includes:
depositing a layer of metal material on the surface of the insulating layer to serve as the first electrode layer;
depositing a pressure piezoelectric layer on the insulating layer and the first electrode layer;
depositing a layer of metal material on the pressure piezoelectric layer to serve as a second electrode layer, wherein the second electrode layer is positioned right above the first electrode layer;
coating an ultrasonic piezoelectric layer over the second electrode layer; the part of the ultrasonic piezoelectric layer, which is in contact with the second electrode layer, is polarized, and the part, which is not in contact with the second electrode layer, is not polarized;
and depositing a layer of metal material on the ultrasonic piezoelectric layer to serve as a fourth electrode layer.
In one embodiment, the conductive assembly electrically connects the base chip and the pressure layer, and the method of electrically connecting the base chip and the ultrasound layer comprises:
providing first to fourth contact points on the substrate chip;
the first electrode layer includes a first electrode main body and a first rib which are electrically connected with each other at a predetermined distance; the second electrode layer comprises a second electrode main body and a second rib which are separated by a preset distance and are electrically connected; the third electrode layer includes a third electrode body and a third rib which are electrically connected with each other at a predetermined distance; the fourth electrode layer includes a fourth electrode body and a fourth rib that are electrically connected at a predetermined distance; the first branch rib, the second branch rib, the third branch rib and the fourth branch rib are arranged in a staggered manner;
forming a first through hole, a second through hole, a third through hole and a fourth through hole in a region where the first stiffener is opposite to the first contact point, a region where the second stiffener is opposite to the second contact point, a region where the third stiffener is opposite to the third contact point and a region where the fourth stiffener is opposite to the fourth contact point;
the first through hole penetrates through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first support rib and the insulating layer and enables the first contact point to leak out; the second through hole penetrates through the isolation layer, the second branch rib, the pressure piezoelectric layer and the insulation layer and enables the second contact point to leak out; the third through hole penetrates through the ultrasonic piezoelectric layer, the third rib, the pressure layer and the insulating layer and enables the third contact point to leak out, and the fourth through hole penetrates through the fourth rib, the ultrasonic piezoelectric layer, the fourth rib, the pressure piezoelectric layer and the insulating layer and enables the fourth contact point to leak out;
depositing a conductive medium in and above the first through hole, the second through hole, the third through hole and the fourth through hole to form a first conductive column, a second conductive column, a third conductive column and a fourth conductive column;
the first conductive column and the second conductive column are used for electrically connecting the substrate chip and the pressure piezoelectric layer; the third conductive column and the fourth conductive column are used for electrically connecting the substrate chip and the ultrasonic piezoelectric layer.
In one embodiment, the conductive assembly electrically connects the base chip and the pressure layer, and the method of electrically connecting the base chip and the ultrasound layer comprises:
providing a first contact point, a second contact point, and a fourth contact point on the substrate chip;
the first electrode layer includes a first electrode main body and a first rib which are electrically connected with each other at a predetermined distance; the second electrode layer comprises a second electrode main body and a second rib which are separated by a preset distance and are electrically connected; the fourth electrode layer includes a fourth electrode body and a fourth rib that are electrically connected at a predetermined distance; the first branch rib, the second branch rib and the fourth branch rib are arranged in a staggered mode;
forming a first through hole, a second through hole and a fourth through hole in a region where the first stiffener is opposite to the first contact point, a region where the second stiffener is opposite to the second contact point and a region where the fourth stiffener is opposite to the fourth contact point;
the first through hole penetrates through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first support rib and the insulating layer and enables the first contact point to leak out; the second through hole penetrates through the ultrasonic piezoelectric layer, the second branch rib, the pressure piezoelectric layer and the insulating layer and enables a second contact point to leak out; the fourth through hole penetrates through the fourth rib, the ultrasonic piezoelectric layer, the second rib, the pressure piezoelectric layer and the insulating layer and enables a fourth contact point to leak out;
and depositing a conductive medium in and above the first through hole, the second through hole and the fourth through hole to form a first conductive column, a second conductive column and a fourth conductive column.
In a further embodiment, the method of making a transducer probe further comprises:
depositing a protective layer over the ultrasonic layer; the protective layer covers the top ends of the ultrasonic piezoelectric layer, the fourth electrode layer and the conductive posts.
According to the technical scheme, the pressure layer with the pressure detection function and the ultrasonic layer with the ultrasonic imaging function are arranged in a transducer probe structure, the pressure signal and the ultrasonic signal are synchronously and independently detected, and the ultrasonic imaging can be carried out while the pressure detection is carried out, so that the functions of products are expanded, and application scenes are widened.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 is a schematic diagram illustrating a transducer probe according to an embodiment of the present application;
FIG. 2 is a schematic diagram illustrating another transducer probe according to an embodiment of the present application;
FIG. 3 is a cross-sectional view of the transducer probe shown in FIG. 2;
fig. 4-13 are schematic structural diagrams illustrating steps of the first step to the tenth step of the transducer probe of fig. 2.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
FIG. 1 is a schematic diagram illustrating a transducer probe according to an embodiment of the present application. Referring to fig. 1, a transducer probe includes a base chip 100, an insulating layer 200, a bimorph 300, and a conductive component.
The insulating layer 200 covers the upper surface of the base chip 100. The dual piezoelectric layer 300 is disposed on the upper surface of the insulating layer 200, and the dual piezoelectric layer 300 includes a pressure layer 310, an ultrasonic layer 320, and a spacer layer 330 located between the pressure layer 310 and the ultrasonic layer 320. The ultrasonic layer 320 is located above the pressure layer 310. Wherein the pressure layer 310 is used for pressure detection and the ultrasound layer 320 is used for ultrasound imaging. The isolation layer 330 is used to shield signal interference between the ultrasound layer 320 and the pressure layer 310 to ensure that both are able to function properly. The conductive components include a first conductive component for electrically connecting the base chip 100 with the pressure layer 310 and a second conductive component for electrically connecting the base chip 100 with the ultrasonic layer 320.
Because the core components of the pressure transducer and the ultrasonic transducer are pressure sensitive elements and are used for detecting signals with different frequencies, in the implementation process, the pressure layer 310 with the pressure detection function and the ultrasonic layer 320 with the ultrasonic imaging function are arranged in a transducer probe structure, and the pressure signal and the ultrasonic signal are synchronously and independently detected, so that the transducer probe can perform ultrasonic imaging while performing pressure detection, the functions of products are expanded, and the application scene is widened.
In one implementation, the pressure layer 310 includes a first electrode layer 311, a pressure piezoelectric layer 312, and a second electrode layer 313. The first electrode layer 311 is disposed on the upper surface of the insulating layer 200, has an area smaller than that of the insulating layer 200, and includes a first electrode main body and a first rib 314, and the first rib 314 is electrically connected to the first electrode main body and serves as a terminal for leading out the first electrode main body. A pressure piezoelectric layer 312 is disposed on the insulating layer 200 and covers the first electrode layer 311, and a plurality of piezoelectric transducer units (not shown in the figure) are arranged in an array on the pressure piezoelectric layer 312. The second electrode layer 313 is disposed on the upper surface of the pressure piezoelectric layer 312 and has an area smaller than that of the pressure piezoelectric layer 312, and includes a second electrode main body and second ribs 315; the second rib 315 is electrically connected to the second electrode main body and serves as a lead-out terminal of the second electrode main body. The first electrode layer 311 and the second electrode layer 313 serve to transmit a pressure signal generated by the piezoelectric transducer unit to the base chip 100 when the pressure piezoelectric layer 312 receives pressure.
The ultrasonic layer 320 includes a third electrode layer 321, an ultrasonic piezoelectric layer 322, and a fourth electrode layer 323. The third electrode layer 321 is located above the isolation layer 330, and includes a third electrode main body and a third rib 324, and the third rib 324 is electrically connected to the third electrode main body and serves as a terminal for leading out the third electrode main body. The ultrasonic piezoelectric layer 322 is disposed on the isolation layer 330 and covers the third electrode layer 321. The fourth electrode layer 323 is arranged on the upper surface of the piezoelectric layer 322 and has an area smaller than that of the piezoelectric layer 322, and comprises a fourth electrode main body and a fourth rib 325; the fourth rib 325 is electrically connected to the fourth electrode main body and serves as a lead-out terminal of the fourth electrode main body. The third electrode layer 321 and the fourth electrode layer 323 serve to transmit an ultrasonic signal generated by the ultrasonic transducer unit to the base chip 100 when the ultrasonic piezoelectric layer 322 receives pressure.
In this embodiment, the second electrode layer 313, the separation layer 330, and the third electrode layer 321 constitute intermediate layers.
In another implementable approach, the intermediate layer comprises only the second electrode layer, which in this embodiment functions the same as the second electrode layer 313, the spacer layer 330 and the third electrode layer 321 in the previous embodiment. FIG. 2 is a schematic diagram illustrating another transducer probe according to an embodiment of the present application. FIG. 3 is a cross-sectional view of the transducer probe shown in FIG. 2. Referring to fig. 2 and 3, the second electrode layer 313 is located directly above the first electrode layer 311, and a portion of the piezoelectric layer 322 in contact with the second electrode layer 313 is polarized and a portion in contact with the pressure piezoelectric layer 312 is not polarized.
In one embodiment, a first contact point 110, a second contact point 120 (coinciding with the third contact point 130), and a fourth contact point 140 are disposed on the base chip 100. The first contact point 110 and the first support rib 314 are connected by the first conductive pillar 500; the second contact point 120 and the second rib 315 are connected by a second conductive pillar 600 (coinciding with the third conductive pillar 700); the fourth contact point 140 and the fourth rib 325 are connected by the fourth conductive pillar 800. The first conductive pillar 500, the second conductive pillar 600, and the fourth conductive pillar 800 penetrate through the dual piezoelectric layer 300 and avoid the first electrode layer 311, the second electrode layer 313, and the fourth electrode layer 323. The first contact point 110, the first conductive pillar 500, the second contact point 120, and the second conductive pillar 600 constitute a first conductive assembly; the second contact point 120, the second conductive post 600, the fourth contact point 140, and the fourth conductive post 800 constitute a second conductive assembly.
In an implementable aspect, the cross-sectional area of the first conductive pillar 500 is smaller than the cross-sectional area of the first support rib 314; the sectional area of the second conductive pillar 600 is smaller than that of the second rib 315; the sectional area of the fourth conductive pillar 800 is smaller than the sectional area of the fourth rib 325.
In one implementation, the first electrode layer 311, the second electrode layer 313, the third electrode layer 321, and the fourth electrode layer 323 are all etched with an active layer.
In one implementation, the transducer probe further includes a protective layer 400 disposed over the sonopiezoelectric layer 322 and covering the fourth electrode layer 323.
In the embodiment of the present application, the thickness of the piezoelectric layer 322 can be the same as or different from the thickness of the piezoelectric layer 312.
According to an aspect of the present application, there is also provided a method of fabricating a transducer probe, comprising:
forming a substrate chip based on a CMOS process;
forming an insulating layer on the surface of the substrate chip;
depositing a pressure layer, an isolation layer and an ultrasonic layer on the surface of the insulating layer from bottom to top in sequence; the isolation layer is used for shielding signal interference between the ultrasonic layer and the pressure layer; the pressure layer, the isolation layer and the ultrasonic layer form a double-piezoelectric layer;
a first conductive component for electrically connecting the substrate chip and the pressure layer is arranged between the substrate chip and the pressure layer, and a second conductive component for electrically connecting the substrate chip and the ultrasonic layer is arranged between the substrate chip and the ultrasonic layer; the first and second conductive components constitute conductive components of the transducer probe.
Specifically, the following provides a manufacturing process of the transducer probe structure shown in fig. 1, including:
1) the signal processor base chip 100 is formed based on a CMOS (Complementary Metal Oxide Semiconductor) process, and the base chip 100 is based on a substrate of silicon wafer, glass, or other material. The substrate chip 100 is provided with four contact points, namely a first contact point 110, a second contact point 120, a third contact point 130 and a fourth contact point 140, which can be regarded as four I/O ports of the CMOS chip.
2) An insulating layer 200 is formed on the surface of the base chip 100, the insulating layer 200 may be silicon dioxide or other insulating materials in the field, and the material of the insulating layer 200 in this embodiment is Polyimide (PI).
3) And after the step 2) is finished, depositing a layer of metal material on the surface of the insulating layer 200 to be used as a first electrode layer 311, and performing a patterning process to etch the first electrode layer 311 of the excitation layer. The first electrode layer 311 includes a first electrode main body and a first branch rib 314, the first branch rib 314 can be regarded as a leading-out terminal of the first electrode layer 311, the first electrode main body is connected with one end of the first branch rib 314, and the first branch rib 314 is used for electrically connecting with the first contact point 110 in the substrate chip 100. In the embodiment, the material of the first electrode layer 311 may be a conductive material such as a metal, a metal silicide, a metal nitride, a metal oxide, or conductive carbon. For example, the material of the first electrode layer 311 may be Mo, Al, Cu, Ag, Au, Ni, Co, TiAl, TiN, TaN, or the like. In addition, the selection of the metal material mentioned below can refer to the description in this section, and is not repeated.
4) And after the step 3) is completed, depositing a pressure piezoelectric layer 312 on the insulating layer 200 and the first electrode layer 311, wherein the piezoelectric layer can be formed by physical vapor deposition, chemical vapor deposition, screen printing and the like, and the piezoelectric material can be piezoelectric crystal, piezoelectric ceramic, piezoelectric polymer or the like. And meanwhile, a plurality of piezoelectric transducer units arranged in an array are manufactured, so that piezoelectric layers among the piezoelectric transducer units can be continuous. The piezoelectric material employed in this embodiment is lead zirconate titanate (PZT).
5) And after the step 4) is completed, referring to the step 3), depositing a layer of metal material on the pressure piezoelectric layer 312 to be used as an electrode, and performing patterning treatment to obtain a second electrode layer 313. The second electrode layer 313 includes a second electrode main body as an upper electrode of the pressure piezoelectric layer 312 and a second stiffener 315, the second stiffener 315 can be regarded as a lead-out terminal of the second electrode layer 313, the second electrode main body is connected to one end of the second stiffener 315, and the second stiffener 315 is used for electrically connecting to the second contact point 120 in the base chip 100. For pressure detection, the first electrode layer 311 and the second electrode layer 313 may be electrically connected to the first contact point 110 and the second contact point 120 of the substrate chip 100, respectively, so as to receive a pressure signal and transmit the pressure signal to the substrate chip 100
6) And after the step 5) is finished, depositing an isolating layer on the second electrode layer 313, wherein the isolating layer is made of metal, ceramic or other high-impedance materials or low-impedance materials such as air. The isolation layer is used for acting as signal isolation layer 330, and ultrasonic layer 320 is located the top of pressure layer 310, and in the propagation path of ultrasonic wave, when the acoustic impedance mismatch between the rete, and isolation layer thickness is the odd number multiple of quarter ultrasonic wave wavelength, the ultrasonic wave is almost all reflection in isolation layer interface department, so the ultrasonic wave that comes out from ultrasonic piezoelectric layer 322, almost total reflection in isolation layer interface department can not propagate pressure layer 310 downwards to receive the interference of ultrasonic wave when avoiding pressure piezoelectric layer 312 to detect the pressure signal.
7) And after the step 6) is completed, depositing a layer of metal material on the isolation layer to be used as an electrode, and performing patterning treatment to obtain a third electrode layer 321. The third electrode layer 321 includes a third electrode main body and a third rib 324, the third electrode main body is used as a lower electrode of the ultrasonic layer 320, the third rib 324 can be regarded as a leading end of the third electrode layer 321, the third electrode main body is connected with one end of the third rib 324, and the third rib 324 is used for electrically connecting with the third contact 130 in the substrate chip 100.
8) And completion 7), an ultrasonic piezoelectric layer 322 is coated on the third electrode layer 321, and the material and thickness of the ultrasonic piezoelectric layer 322 may be the same as or different from those of the pressure piezoelectric layer 312. In this embodiment, the piezoelectric material is a vinylidene fluoride-trifluoroethylene copolymer (PVDF-Tri), the ultrasonic piezoelectric layer 322 is coated, in-situ polarization is performed, the portion with the electrode below is polarized, the portion without the electrode below is not polarized, the polarized ultrasonic piezoelectric layer 322 has piezoelectric properties, and the rest of the unpolarized piezoelectric layer region does not have piezoelectric properties.
9) And 8), depositing a layer of metal material as an electrode layer according to the step 3), and performing a patterning process to etch the fourth electrode layer 323 of the excitation layer. The fourth electrode layer 323 includes a fourth electrode main body used as an upper electrode of the ultrasonic layer 320 and a fourth rib 325, the fourth rib 325 may be regarded as a lead-out terminal of the fourth electrode layer 323, the fourth electrode main body is connected to one end of the fourth rib 325, and the fourth rib 325 is used to be electrically connected to the fourth contact point 140 in the base chip 100.
10) And completion 9), an etching process is performed to form a first via, a second via, a third via, and a fourth via in a region where the first stiffener 314 is opposite to the first contact point 110, and a region where the second stiffener 315 is opposite to the second contact point 120, a region where the third stiffener 324 is opposite to the third contact point 130, and a region where the fourth stiffener 325 is opposite to the fourth contact point 140. The first through hole passes through the ultrasonic piezoelectric layer 322, the pressure piezoelectric layer 312, the first stiffener 314, and the insulating layer 200 to leak out of the first contact point 110 of the corresponding base chip 100, and the second through hole passes through the insulating layer, the second stiffener 315, the pressure piezoelectric layer 312, and the insulating layer 200 to leak out of the second contact point 120 of the corresponding base chip 100. The third through hole penetrates through the ultrasonic piezoelectric layer 322, the third branch rib 324, the pressure layer 310 and the insulating layer 200 to leak out of the corresponding third contact point 130 of the base chip 100, and the fourth through hole penetrates through the fourth branch rib 325, the ultrasonic piezoelectric layer 322, the fourth branch rib 325, the pressure piezoelectric layer 312 and the insulating layer 200 to leak out of the corresponding fourth contact point 140 of the base chip 100. Similarly, the second through hole, the third through hole and the fourth through hole all leak out of at least part of the upper surface of the corresponding branch rib so as to enhance the subsequent contact area with the conductive medium.
11) And finishing 10), depositing a conductive medium in and above the first through hole, the second through hole, the third through hole and the fourth through hole, wherein the conductive medium is filled in the first through hole, the second through hole, the third through hole and the fourth through hole. In this embodiment, the conductive medium is aluminum and is formed by physical vapor deposition, and the conductive medium may be other conductive materials. After the conductive medium is deposited, a patterning process is performed to remove portions of the conductive medium outside the first through hole, the second through hole, the third through hole and the fourth through hole, the first conductive pillar 500 is filled in the first through hole, the second conductive pillar 600 is filled in the second through hole, the third conductive pillar 700 is filled in the third through hole, and the fourth conductive pillar 800 is filled in the fourth through hole. The first conductive pillar 500 is electrically contacted with the first contact point 110 and the first rib 314 of the base chip 100, respectively, so as to electrically connect the first contact point 110 and the first electrode layer 311 of the base chip 100, the second conductive pillar 600 is electrically contacted with the second contact point 120 and the second rib 315 of the base chip 100, respectively, so as to electrically connect the second contact point 120 and the second electrode layer 313 of the base chip 100, the third conductive pillar 700 is electrically contacted with the third contact point 130 and the third rib 324 of the base chip 100, respectively, so as to electrically connect the third contact point 130 and the third electrode layer 321 of the base chip 100, and the fourth conductive pillar 800 is electrically contacted with the fourth contact point 140 and the fourth rib 325 of the base chip 100, respectively, so as to electrically connect the fourth contact point 140 and the fourth electrode layer 323 of the base chip 100. By using the first conductive pillar 500 and the second conductive pillar 600, the electrical connection between the circuit unit of the base chip 100 and the upper pressure piezoelectric layer 312, that is, the electrical connection between the base of the signal processor and the pressure transducer, is realized. By using the third conductive pillar 700 and the fourth conductive pillar 800, the electrical connection between the circuit unit of the substrate chip 100 and the ultrasonic piezoelectric layer 322, that is, the electrical connection between the signal processor substrate and the ultrasonic transducer, is realized.
12) And completing 11), depositing a layer of protective layer 400 over the chip, where the protective layer 400 covers the ultrasonic piezoelectric layer 322, the fourth electrode layer 323, the first conductive pillar 500, the second conductive pillar 600, and the third conductive pillar 700. The protective layer 400 described above may be deposited using deposition processes known in the art. The protection layer 400 can serve as a sealing, insulating and protecting function for the piezoelectric layer, and the protection layer 400 can also serve as a matching layer of the pixel structure of the ultrasonic transducer. The first electrode layer 311, the second electrode layer 313, the third electrode layer 321, the fourth electrode layer 323, the pressure piezoelectric layer 312, the ultrasonic piezoelectric layer 322 and the protection layer 400 cooperate to form a pressure and ultrasonic double piezoelectric layer 300 transducer pixel structure formed corresponding to the circuit unit of the base chip 100. The optimal combination of the thickness and the plane size of each layer can obtain ideal resonance frequency and higher sensitivity. In the present embodiment, the material of the protection layer 400 is silicon rubber, and may be other insulating materials or combinations in the art.
The following provides a fabrication flow for the transducer probe structure shown in fig. 2. The manufacturing process of the transducer probe structure shown in fig. 2 is partially the same as the manufacturing process of the transducer probe structure shown in fig. 1, and the difference is that the number of contact points and the number of electrode layers are different, which is specifically as follows:
1) the signal processor base chip 100 is formed based on a CMOS (Complementary Metal Oxide Semiconductor) process, and the base chip 100 is based on a substrate of silicon wafer, glass, or other material. The substrate chip 100 is provided with three contact points, namely a first contact point 110, a second contact point 120 and a fourth contact point 140, which can be regarded as three I/O ports of the CMOS chip. See fig. 3.
2) Referring to fig. 4, the insulating layer 200 may be silicon dioxide or other insulating materials in the field, and the material of the insulating layer 200 in this embodiment is Polyimide (PI).
3) And after the step 2) is completed, depositing a layer of metal material on the surface of the insulating layer 200 to serve as the first electrode layer 311, and performing a patterning process to etch the first electrode layer 311 of the excitation layer, as shown in fig. 6. The first electrode layer 311 includes a first electrode main body and a first branch rib 314, the first branch rib 314 can be regarded as a leading-out terminal of the first electrode layer 311, the first electrode main body is connected with one end of the first branch rib 314, and the first branch rib 314 is used for electrically connecting with the first contact point 110 in the substrate chip 100. In the embodiment, the material of the first electrode layer 311 may be a conductive material such as a metal, a metal silicide, a metal nitride, a metal oxide, or conductive carbon. For example, the material of the first electrode layer 311 may be Mo, Al, Cu, Ag, Au, Ni, Co, TiAl, TiN, TaN, or the like. In addition, the selection of the metal material mentioned below can refer to the description in this section, and is not repeated.
4) After completion of step 3), a piezo-electric layer 312 is deposited on the insulating layer 200 and the first electrode layer 311, see fig. 7. The piezoelectric layer can be formed by physical vapor deposition, chemical vapor deposition, screen printing, and the like, and the piezoelectric material can be piezoelectric crystal, piezoelectric ceramic, piezoelectric polymer, or the like. And meanwhile, a plurality of piezoelectric transducer units arranged in an array are manufactured, so that piezoelectric layers among the piezoelectric transducer units can be continuous. The piezoelectric material employed in this embodiment is lead zirconate titanate (PZT).
5) And after the step 4) is completed, referring to the step 3), depositing a layer of metal material on the pressure piezoelectric layer 312 to be used as an electrode, and performing patterning treatment to obtain a second electrode layer 313, which is shown in fig. 8. The second electrode layer 313 includes a second electrode main body as an upper electrode of the pressure piezoelectric layer 312 and a second stiffener 315, the second stiffener 315 can be regarded as a lead-out terminal of the second electrode layer 313, the second electrode main body is connected to one end of the second stiffener 315, and the second stiffener 315 is used for electrically connecting to the second contact point 120 in the base chip 100. For pressure detection, the first electrode layer 311 and the second electrode layer 313 may be electrically connected to the first contact point 110 and the second contact point 120 of the substrate chip 100, respectively, so as to receive a pressure signal and transmit the pressure signal to the substrate chip 100. In this embodiment, the second electrode layer 313 combines the functions of the second electrode layer 313, the isolation layer and the third electrode layer 321 in the previous embodiment, that is, in addition to being the upper electrode of the pressure piezoelectric layer 312, the second electrode layer 313 can also be used as the lower electrode of the following ultrasonic piezoelectric layer 322 and also as the signal isolation layer 330, in the propagation path of the ultrasonic wave, when the acoustic impedance between the layers is mismatched and the thickness of the isolation layer is an odd multiple of a quarter of the wavelength of the ultrasonic wave, the ultrasonic wave is almost totally reflected at the interface of the second electrode layer 313, and does not propagate downward to the pressure piezoelectric layer 312, so that the pressure piezoelectric layer 312 is prevented from being interfered by the ultrasonic wave when detecting the pressure signal.
6) After completion of step 5), an ultrasound piezoelectric layer 322 is applied over the second electrode layer 313, see fig. 9. The material and thickness of the ultrasonic piezoelectric layer 322 may be the same as or different from the pressure piezoelectric layer 312. In this embodiment, the piezoelectric material is a vinylidene fluoride-trifluoroethylene copolymer (PVDF-Tri), the ultrasonic piezoelectric layer 322 is coated, in-situ polarization is performed, the portion with the electrode below is polarized, the portion without the electrode below is not polarized, the polarized ultrasonic piezoelectric layer 322 has piezoelectric properties, and the rest of the unpolarized piezoelectric layer region does not have piezoelectric properties.
7) And after the step 6) is finished, depositing a layer of metal material as an electrode layer according to the step 3), and performing a patterning process to etch the fourth electrode layer 323 of the excitation layer. Referring to fig. 10, the fourth electrode layer 323 includes a fourth electrode main body for serving as an upper electrode of the ultrasonic layer 320 and a fourth rib 325, the fourth rib 325 may be regarded as a lead-out terminal of the fourth electrode layer 323, the fourth electrode main body is connected to one end of the fourth rib 325, and the fourth rib 325 is for electrically connecting with the fourth contact point 140 in the base chip 100.
8) After step 7) is completed, an etching process is performed to form a first via hole 340, a second via hole 350, and a fourth via hole 360 in the region where the first stiffener 314 opposes the first contact point 110, and the region where the second stiffener 315 opposes the second contact point 120, and the region where the fourth stiffener 325 opposes the fourth contact point 140, as shown in fig. 11. The first through hole 340 leaks out of the first contact point 110 of the corresponding base chip 100 through the ultrasonic piezoelectric layer 322, the pressure piezoelectric layer 312, the first stiffener 314, and the insulating layer 200, and the second through hole 350 leaks out of the second contact point 120 of the corresponding base chip 100 through the ultrasonic piezoelectric layer 322, the second stiffener 315, the pressure piezoelectric layer 312, and the insulating layer 200. The fourth via hole 360 leaks out of the corresponding fourth contact point 140 of the base chip 100 through the fourth stiffener 325, the ultrasonic piezoelectric layer 322, the second stiffener 315, the pressure piezoelectric layer 312, and the insulating layer 200. In this embodiment, through the control of the via formation process, the first via 340 preferably leaks out of at least a portion of the upper surface of the first rib 314, so as to increase the contact area between the subsequent first rib 314 and the conductive medium. Likewise, the second through hole 350 and the fourth through hole 360 both leak out of at least a portion of the upper surface of the corresponding rib, so as to enhance the subsequent contact area with the conductive medium.
9) And after the step 8) is completed, depositing a conductive medium in and above the first through hole 340, the second through hole 350 and the fourth through hole 360, wherein the conductive medium fills the first through hole 340, the second through hole 350 and the fourth through hole 360, and the upper surface of the conductive medium in each through hole is higher than the upper surface of the piezoelectric layer outside the through hole. After the conductive medium is deposited, a patterning process is performed to remove portions of the conductive medium outside the first through hole 340, the second through hole 350, and the fourth through hole 360, to fill the first through hole 340 with the first conductive pillar 500, to fill the second through hole 350 with the second conductive pillar 600 (equivalent to the second conductive pillar 600 and the third conductive pillar 700 in fig. 1), and to fill the fourth through hole 360 with the fourth conductive pillar 800, see fig. 12. The first conductive pillar 500 is electrically connected to the first contact point 110 and the first rib 314 of the base chip 100, respectively, so as to electrically connect the first contact point 110 and the first electrode layer 311 of the base chip 100, the second conductive pillar 600 is electrically connected to the second contact point 120 and the second rib 315 of the base chip 100, respectively, so as to electrically connect the second contact point 120 and the second electrode layer 313 of the base chip 100, and the fourth conductive pillar 800 is electrically connected to the fourth contact point 140 and the fourth rib 325 of the base chip 100, respectively, so as to electrically connect the fourth contact point 140 and the second electrode layer 313 of the base chip 100. By using the first conductive pillar 500 and the second conductive pillar 600, the electrical connection between the circuit unit of the base chip 100 and the upper pressure piezoelectric layer 312, that is, the electrical connection between the base of the signal processor and the pressure transducer, is realized. By using the second conductive pillar 600 and the fourth conductive pillar 800, the electrical connection between the circuit unit of the substrate chip 100 and the ultrasonic piezoelectric layer 322, that is, the electrical connection between the signal processor substrate and the ultrasonic transducer, is realized.
10) After step 9) is completed, a protection layer 400 is deposited over the ultrasonic layer, referring to fig. 13, where the protection layer 400 covers the ultrasonic piezoelectric layer 322, the fourth electrode layer 323, the first conductive pillar 500, the second conductive pillar 600, and the fourth conductive pillar 800. The protective layer 400 described above may be deposited using deposition processes known in the art. The protection layer 400 can serve as a sealing, insulating and protecting function for the piezoelectric layer, and the protection layer 400 can also serve as a matching layer of the pixel structure of the ultrasonic transducer. The first electrode layer 311, the second electrode layer 313, the fourth electrode layer 323, the pressure piezoelectric layer 312, the ultrasonic piezoelectric layer 322 and the protection layer 400 cooperate to form a pressure and ultrasonic double piezoelectric layer 300 transducer pixel structure formed corresponding to the circuit unit of the base chip 100. The optimal combination of the thickness and the plane size of each layer can obtain ideal resonance frequency and higher sensitivity. In the present embodiment, the material of the protection layer 400 is silicon rubber, and may be other insulating materials or combinations in the art.
According to the technical scheme, the pressure layer with the pressure detection function and the ultrasonic layer with the ultrasonic imaging function are arranged in a transducer probe structure, and the pressure signal and the ultrasonic signal are synchronously and independently detected, so that the ultrasonic imaging can be carried out while the pressure detection is carried out, the functions of products are expanded, and application scenes are widened.
According to another aspect of the present application, there is also provided a medical device comprising a transducer probe of any of the configurations described above.
Medical device application case 1:
and (3) intravascular detection: the pressure transducer in the transducer probe is used for intravascular palpation and can detect the protruding position in the blood vessel and the concave-convex interval of the rough surface; the ultrasonic transducer in the transducer probe is used for imaging the inner wall of the blood vessel and detecting the blood flow, and the real appearance of the inner wall of the blood vessel is obtained by combining the ultrasonic transducer and the blood flow.
Medical device application case 2:
skin and subcutaneous tissue detection: the pressure transducer in the transducer probe can be attached to the surface of the skin to detect the pulse. Because ultrasonic waves can penetrate the surface layer of the skin to detect subcutaneous tissue, the ultrasonic transducer in the transducer probe can be used for detecting tumors, nodules, blood flow and the like in the subcutaneous tissue.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (16)
1. A transducer probe, comprising:
a substrate chip;
an insulating layer covering the upper surface of the substrate chip;
the double piezoelectric layer is arranged on the upper surface of the insulating layer and comprises a pressure layer, an ultrasonic layer and an isolating layer which is positioned between the pressure layer and the ultrasonic layer and can shield signal interference between the ultrasonic layer and the pressure layer; the ultrasonic layer is positioned above the pressure layer;
and the conductive assembly comprises a first conductive assembly used for electrically connecting the substrate chip and the pressure layer and a second conductive assembly used for electrically connecting the substrate chip and the ultrasonic layer.
2. The transducer probe of claim 1, wherein the dual piezoelectric layer comprises:
the first electrode layer is arranged on the upper surface of the insulating layer, has an area smaller than that of the insulating layer, and comprises a first electrode main body and a first support rib; the first support rib is electrically connected with the first electrode main body and is used as a leading-out end of the first electrode main body;
the pressure piezoelectric layer is arranged on the insulating layer and covers the first electrode layer, and a plurality of piezoelectric transducer units which are arranged in an array are arranged on the pressure piezoelectric layer;
an intermediate layer disposed on an upper surface of the pressure piezoelectric layer and having an area smaller than that of the pressure piezoelectric layer;
an ultrasonic piezoelectric layer disposed on and covering the intermediate layer for generating an ultrasonic signal;
the fourth electrode layer is arranged on the upper surface of the ultrasonic piezoelectric layer, has an area smaller than that of the ultrasonic piezoelectric layer, and comprises a fourth electrode main body and fourth ribs; the fourth rib is electrically connected with the fourth electrode main body and is used as a leading-out end of the fourth electrode main body;
the intermediate layer is configured to: shielding signal interference between the ultrasonic piezoelectric layer and the pressure piezoelectric layer, forming the pressure layer with the pressure piezoelectric layer and the first electrode layer, and transmitting a pressure signal generated by the pressure piezoelectric layer to the base chip; and the ultrasonic piezoelectric layer and the fourth electrode layer form the ultrasonic layer and transmit an ultrasonic signal generated by the ultrasonic piezoelectric layer to the substrate chip.
3. The transducer probe of claim 2, wherein the intermediate layer comprises:
a second electrode layer including a second electrode main body and second ribs; the second support rib is electrically connected with the second electrode main body and is used as a leading-out end of the second electrode main body; the second electrode layer is positioned right above the first electrode layer;
the part of the ultrasonic piezoelectric layer, which is in contact with the second electrode layer, is polarized, and the part of the ultrasonic piezoelectric layer, which is in contact with the pressure piezoelectric layer, is not polarized.
4. The transducer probe of claim 2, wherein the intermediate layer comprises:
the second electrode layer is arranged on the upper surface of the pressure piezoelectric layer, has an area smaller than that of the pressure piezoelectric layer, and comprises a second electrode main body and second ribs; the second support rib is electrically connected with the second electrode main body and is used as a leading-out end of the second electrode main body;
the isolation layer;
the third electrode layer is positioned above the isolating layer and comprises a third electrode main body and a third rib, and the third rib is electrically connected with the third electrode main body and is used as a leading-out end of the third electrode main body; the ultrasonic piezoelectric layer is arranged on the isolation layer and covers the third electrode layer;
the first electrode layer and the second electrode layer are used for transmitting the pressure signal generated by the piezoelectric transducer unit to the substrate chip, and the third electrode layer and the fourth electrode layer are used for transmitting the ultrasonic signal generated by the ultrasonic transducer unit to the substrate chip.
5. The transducer probe of claim 3, wherein the substrate chip is configured with a first contact point, a second contact point, and a fourth contact point;
the first contact point is connected with the first support rib through the first conductive column; the second contact point is connected with the second support rib through a second conductive column; the fourth contact point is connected with the fourth rib through a fourth conductive column;
the first conductive column, the second conductive column and the fourth conductive column penetrate through the double piezoelectric layer and avoid the first electrode layer, the second electrode layer and the fourth electrode layer;
the first contact point, the first conductive column, the second contact point and the second conductive column form the first conductive assembly; the second contact point, the second conductive pillar, the fourth contact point and the fourth conductive pillar constitute the second conductive assembly.
6. The transducer probe of claim 5, wherein the first conductive post has a cross-sectional area less than a cross-sectional area of the first stiffener; the sectional area of the second conductive column is smaller than that of the second support rib; the sectional area of the fourth conductive column is smaller than that of the fourth ribs.
7. The transducer probe of claim 3 or 4, wherein the first electrode layer, the fourth electrode layer, the second electrode layer in the intermediate layer, or the second electrode layer in the intermediate layer and the third electrode layer are each etched with an excitation layer.
8. The transducer probe of claim 7, further comprising a protective layer disposed over the ultrasonic piezoelectric layer and covering the fourth electrode layer.
9. The transducer probe of claim 3, wherein a thickness of the ultrasonic piezoelectric layer is different from a thickness of the pressure piezoelectric layer.
10. A medical device comprising a transducer probe according to any of claims 1 to 9.
11. A method of making a transducer probe, comprising:
forming a substrate chip based on a CMOS process;
forming an insulating layer on the surface of the substrate chip;
depositing a pressure layer, an isolation layer and an ultrasonic layer on the surface of the insulating layer from bottom to top in sequence; the isolation layer is used for shielding signal interference between the ultrasonic layer and the pressure layer; the pressure layer, the isolation layer and the ultrasonic layer form a double piezoelectric layer;
disposing a first conductive component electrically connecting the base chip and the pressure layer between the base chip and the pressure layer, and disposing a second conductive component for electrically connecting the base chip and the ultrasonic layer between the base chip and the ultrasonic layer; the first and second conductive components constitute conductive components of the transducer probe.
12. The method of claim 11, wherein the process flow of the dual piezoelectric layer comprises:
manufacturing the piezoelectric layer: depositing a layer of metal material on the surface of the insulating layer to serve as a first electrode layer; depositing a pressure piezoelectric layer on the insulating layer and the first electrode layer; depositing a layer of metal material on the pressure piezoelectric layer as a second electrode layer;
manufacturing the isolation layer: depositing an isolation layer on the second electrode layer, wherein the thickness of the isolation layer is odd times of the wavelength of the quarter of the ultrasonic wave;
manufacturing the ultrasonic layer: depositing a layer of metal material on the isolation layer to serve as a third electrode layer; coating an ultrasonic piezoelectric layer over the third electrode layer; the part of the ultrasonic piezoelectric layer, which is in contact with the third electrode layer, is polarized, and the part, which is not in contact with the third electrode layer, is not polarized; and depositing a layer of metal material on the ultrasonic piezoelectric layer to serve as a fourth electrode layer.
13. The method of claim 11, wherein the process flow of the dual piezoelectric layer comprises:
depositing a layer of metal material on the surface of the insulating layer to serve as a first electrode layer;
depositing a pressure piezoelectric layer on the insulating layer and the first electrode layer;
depositing a layer of metal material on the pressure piezoelectric layer to serve as a second electrode layer, wherein the second electrode layer is positioned right above the first electrode layer;
coating an ultrasonic piezoelectric layer over the second electrode layer; the part of the ultrasonic piezoelectric layer, which is in contact with the second electrode layer, is polarized, and the part, which is not in contact with the second electrode layer, is not polarized;
and depositing a layer of metal material on the ultrasonic piezoelectric layer to serve as a fourth electrode layer.
14. The method of manufacturing of claim 12, wherein the conductive component electrically connects the base die and the pressure layer, and the method of electrically connecting the base die and the ultrasound layer comprises:
providing first to fourth contact points on the substrate chip;
the first electrode layer includes a first electrode main body and a first rib which are electrically connected with each other at a predetermined distance; the second electrode layer includes a second electrode body and a second rib that are electrically connected with a predetermined distance therebetween; the third electrode layer includes a third electrode body and a third rib that are electrically connected at a predetermined distance; the fourth electrode layer includes a fourth electrode body and a fourth rib that are electrically connected at a predetermined distance; the first stiffener, the second stiffener, the third stiffener and the fourth stiffener are arranged in a staggered manner;
forming a first through hole, a second through hole, a third through hole and a fourth through hole in a region where the first stiffener is opposed to the first contact point, a region where the second stiffener is opposed to the second contact point, a region where the third stiffener is opposed to the third contact point, and a region where the fourth stiffener is opposed to the fourth contact point;
the first through hole penetrates through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first support rib and the insulating layer and enables the first contact point to leak out; the second through hole penetrates through the isolation layer, the second branch rib, the pressure piezoelectric layer and the insulation layer and enables the second contact point to leak out; the third through hole penetrates through the ultrasonic piezoelectric layer, the third rib, the pressure layer and the insulating layer and enables the third contact point to leak out, and the fourth through hole penetrates through the fourth rib, the ultrasonic piezoelectric layer, the fourth rib, the pressure piezoelectric layer and the insulating layer and enables the fourth contact point to leak out;
depositing a conductive medium inside and over the first, second, third, and fourth vias to form first, second, third, and fourth conductive pillars;
the first conductive column and the second conductive column are used for electrically connecting the substrate chip and the pressure piezoelectric layer; the third conductive column and the fourth conductive column are used for electrically connecting the substrate chip and the ultrasonic piezoelectric layer.
15. The method of manufacturing of claim 13, wherein the conductive component electrically connects the base die and the pressure layer, and the method of electrically connecting the base die and the ultrasound layer comprises:
providing a first contact point, a second contact point, and a fourth contact point on the substrate chip;
the first electrode layer includes a first electrode main body and a first rib which are electrically connected with each other at a predetermined distance; the second electrode layer includes a second electrode body and a second rib that are electrically connected with a predetermined distance therebetween; the fourth electrode layer includes a fourth electrode body and a fourth rib that are electrically connected at a predetermined distance; the first stiffener, the second stiffener and the fourth stiffener are arranged in a staggered manner;
forming a first through hole, a second through hole and a fourth through hole in a region where the first stiffener is opposed to the first contact point, a region where the second stiffener is opposed to the second contact point, and a region where the fourth stiffener is opposed to the fourth contact point;
the first through hole penetrates through the ultrasonic piezoelectric layer, the pressure piezoelectric layer, the first support rib and the insulating layer and enables the first contact point to leak out; the second through hole penetrates through the ultrasonic piezoelectric layer, the second branch rib, the pressure piezoelectric layer and the insulating layer and enables the second contact point to leak out; the fourth through hole penetrates through the fourth rib, the ultrasonic piezoelectric layer, the second rib, the pressure piezoelectric layer and the insulating layer and enables the fourth contact point to leak out;
depositing a conductive medium inside and over the first, second, and fourth vias to form first, second, and fourth conductive pillars.
16. The method of manufacturing according to claim 14 or 15, further comprising:
depositing a protective layer over the ultrasonic layer; the protective layer covers the top ends of the ultrasonic piezoelectric layer, the fourth electrode layer and the conductive posts.
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| CN116169151A (en) * | 2023-04-25 | 2023-05-26 | 合肥晶合集成电路股份有限公司 | Semiconductor structure, manufacturing method of semiconductor structure and image sensor device |
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|---|---|---|---|---|
| CN116169151A (en) * | 2023-04-25 | 2023-05-26 | 合肥晶合集成电路股份有限公司 | Semiconductor structure, manufacturing method of semiconductor structure and image sensor device |
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