CN114374390A - Temperature sensor circuit and chip - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
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- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/12—Analogue/digital converters
- H03M1/34—Analogue value compared with reference values
- H03M1/38—Analogue value compared with reference values sequentially only, e.g. successive approximation type
- H03M1/46—Analogue value compared with reference values sequentially only, e.g. successive approximation type with digital/analogue converter for supplying reference values to converter
- H03M1/466—Analogue value compared with reference values sequentially only, e.g. successive approximation type with digital/analogue converter for supplying reference values to converter using switched capacitors
- H03M1/468—Analogue value compared with reference values sequentially only, e.g. successive approximation type with digital/analogue converter for supplying reference values to converter using switched capacitors in which the input S/H circuit is merged with the feedback DAC array
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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Abstract
The invention discloses a temperature sensor circuit and a chip, wherein the temperature sensor circuit comprises a coarse conversion ADC module, a bias current adjusting module, a fine conversion ADC module and an output module. The temperature signal detected by the temperature measuring device is subjected to analog-to-digital conversion by using the coarse conversion ADC module to obtain a first digital signal and an analog quantity residual signal, then the first digital signal is adjusted by the bias current adjusting module to output bias current to the fine conversion ADC module, the analog quantity residual signal is subjected to analog-to-digital conversion by the fine conversion ADC module according to the bias current to obtain a second digital signal, and finally the digital temperature signal is output by the output module according to the first digital signal and the second digital signal. Therefore, the temperature sensor circuit provided by the embodiment of the invention can ensure that the temperature sensor circuit can normally work in a temperature range, and meanwhile, the power consumption of the circuit is reduced, and the working performance of the circuit is improved.
Description
Technical Field
The present invention relates to the field of integrated circuit technology, and in particular, to a temperature sensor circuit and a chip.
Background
Currently, more and more chips are required to monitor the temperature on the chip during operation. Through the monitoring of the temperature, whether the chip needs to be subjected to specific operation or not can be judged according to the collected environmental temperature or chip temperature data. For example, when the environment temperature is monitored to be overhigh, a user is prompted to perform protective actions on the chip, the working frequency of the chip is reduced or the work of the chip is suspended, and therefore the functional safety level of the chip is improved.
In order to quantify the result of the temperature sensor, an Analog-to-Digital Converter (ADC) is used to convert the temperature-sensitive physical quantity (voltage/current) on the chip into a Digital quantity, and then the Digital quantity is obtainedTemperature data on the chip. A more common option is to quantify the base-emitter voltage (V) of the transistorBE) Difference value delta V of base electrode-emitter voltage of triode working under different current densitiesBE. In order to achieve a high temperature measurement accuracy, the ADC circuitry used in the temperature sensor typically requires a very high resolution. The traditional technical scheme is to use an oversampling type sigma-delta ADC and exchange time for precision. The sigma-delta ADC can obtain high resolution and high precision by utilizing an oversampling technology and a noise shaping technology, but the consumed conversion time is correspondingly prolonged while the high precision is obtained.
The sigma-delta ADC is a switched capacitor circuit, and in the working process of the circuit, an amplifier continuously charges and discharges a capacitor, and a comparator circuit in the sigma-delta ADC also needs to continuously judge the voltage of a comparator and amplify the voltage to a digital level. Therefore, the operational amplifier and the comparator in the sigma-delta ADC need to have sufficient power consumption to ensure sufficient bandwidth. The bandwidth will vary with temperature, which in turn causes the speed of the amplifier to vary at high and low temperatures.
In a related design, the higher the temperature, the slowest the speed of the amplifier. In order to meet the accuracy at high temperatures, it is necessary to design the speed of the amplifier at high temperatures to be higher than the lowest target speed of the amplifier. However, this results in a large excess of amplifier speed at low temperatures, i.e. the power consumption of the temperature sensor is significantly higher than actually required.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. Therefore, an object of the present invention is to provide a temperature sensor circuit, which can ensure that the temperature sensor circuit can work normally in a temperature range, and at the same time, reduce the power consumption of the circuit and improve the working performance of the circuit.
A second objective of the present invention is to provide a chip.
In order to achieve the above object, a first embodiment of the present invention provides a temperature sensor circuit, which includes a coarse conversion ADC module, configured to perform analog-to-digital conversion on an input analog temperature signal to obtain a first digital signal and an analog residual signal; the bias current adjusting module is used for outputting bias current according to the first digital signal; the fine conversion ADC module is used for carrying out analog-to-digital conversion on the analog quantity residual error signal according to the bias current to obtain a second digital signal; and the output module is used for outputting a digital temperature signal according to the first digital signal and the second digital signal.
The temperature sensor circuit of the embodiment of the invention comprises a coarse conversion ADC module, a bias current adjusting module, a fine conversion ADC module and an output module. The temperature signal detected by the temperature measuring device is subjected to analog-to-digital conversion by using the coarse conversion ADC module to obtain a first digital signal and an analog quantity residual signal, then the first digital signal is adjusted by the bias current adjusting module to output bias current to the fine conversion ADC module, the analog quantity residual signal is subjected to analog-to-digital conversion by the fine conversion ADC module according to the bias current to obtain a second digital signal, and finally the digital temperature signal is output by the output module according to the first digital signal and the second digital signal. Therefore, the temperature sensor circuit provided by the embodiment of the invention can ensure that the temperature sensor circuit can normally work in a temperature range, and meanwhile, the power consumption of the circuit is reduced, and the working performance of the circuit is improved.
In some embodiments of the invention, the bias current adjustment module comprises: a current adjustment signal generation unit for generating a current adjustment signal according to the first digital signal; and the bias current generating unit is used for generating the bias current according to the current adjusting signal.
In some embodiments of the present invention, the current adjustment signal generating unit obtains the switch control signal corresponding to the bias current by using a look-up table to control the bias current generating unit to generate the bias current.
In some embodiments of the present invention, the bias current generating unit includes: a current source; the drain electrode of the first transistor is connected with the grid electrode and then connected to the current source; the drain electrodes of the second transistors are connected together to serve as the output end of the bias current generation unit, the grid electrode of each second transistor is connected to the drain electrode of the first transistor through a first switch and is connected to the source electrode of the first transistor through a second switch, the source electrode of each second transistor is connected together and then is connected with the source electrode of the first transistor and is connected with the ground, and N is a positive integer.
In some embodiments of the present invention, the first transistor and the second transistor are both MOS transistors.
In some embodiments of the invention, the switch control signal corresponding to the first switch is opposite to the switch control signal corresponding to the second switch.
In some embodiments of the present invention, the output module includes a register, and is configured to shift the first digital signal to the left by the same number of bits as the resolution of the fine conversion ADC module, and then superimpose the first digital signal and the second digital signal to obtain the digital temperature signal.
In some embodiments of the present invention, the coarse conversion ADC module is one of a successive approximation analog-to-digital converter, a pipelined converter and a flash-type converter.
In some embodiments of the present invention, the fine conversion ADC module is a sigma-delta type analog-to-digital converter.
In some embodiments of the present invention, the analog temperature signal is obtained by a temperature measuring device, wherein the temperature measuring device is a triode or a temperature sensing resistor.
To achieve the above object, a second embodiment of the present invention provides a chip, which includes the temperature sensor circuit according to the above embodiments.
The chip of the embodiment of the invention can ensure that the temperature sensor circuit can normally work in a temperature range through the sensor circuit in the embodiment, simultaneously reduces the power consumption of the circuit and improves the working performance of the circuit.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a block diagram of a temperature sensor circuit according to one embodiment of the present invention;
FIG. 2 is a schematic diagram of a coarse conversion and a fine conversion according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of signaling and switching modes according to an embodiment of the present invention;
FIG. 4 is a block diagram of a temperature sensor circuit according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a bias current adjustment module according to an embodiment of the invention;
FIG. 6 is a graph of input pair transconductance versus temperature, according to an embodiment of the present invention;
fig. 7 is a block diagram of a chip architecture according to an embodiment of the invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
The temperature sensor circuit and chip of the embodiments of the present invention are described below with reference to the drawings.
Fig. 1 is a block diagram of a temperature sensor circuit according to an embodiment of the present invention.
As shown in fig. 1, the present invention provides a two-step temperature sensor circuit 10, where the two-step temperature sensor circuit 10 includes a coarse conversion ADC module 11, a bias current adjustment module 12, a fine conversion ADC module 13, and an output module 14.
The coarse conversion ADC module 11 is configured to perform analog-to-digital conversion on an input analog temperature signal to obtain a first digital signal and an analog residual signal; the bias current adjusting module 12 is configured to output a bias current according to the first digital signal; the fine conversion ADC module 13 is used for performing analog-to-digital conversion on the analog quantity residual signal according to the bias current to obtain a second digital signal; the output module 14 is configured to output a digital temperature signal according to the first digital signal and the second digital signal.
It should be noted that the two-step temperature sensor includes a temperature measuring device and a two-step temperature sensor circuit 10, in this embodiment, the two-step temperature sensor circuit 10 is mainly limited, and the two-step temperature sensor circuit 10 can convert a temperature signal detected by the temperature measuring device into two steps, so that an output end of the temperature measuring device can be connected to an input end of the two-step temperature sensor circuit 10, and specifically, an output end of the temperature measuring device is connected to an input end of the coarse conversion ADC module 11. It is understood that the temperature measuring device can be a triode, a temperature sensing resistor or the like which can generate a voltage related to the temperature.
Specifically, the temperature measuring device may detect a temperature and output an analog quantity related to the detected temperature, such as a current signal or a voltage signal, and the two-step temperature sensor circuit 10 may convert the analog quantity into a digital quantity and output the digital quantity. More specifically, the coarse conversion ADC module 11 performs conversion processing on the analog temperature signal to obtain a first digital signal and a part of an analog residual signal, the offset current adjusting module 12 uses the first digital signal as an input signal and outputs an offset current according to the input signal, the fine conversion ADC module 13 uses the analog residual signal as an input signal and performs analog-to-digital conversion on the analog residual signal according to the offset adjusting current to obtain a second digital signal, and the output module of the present embodiment uses the first digital signal and the second digital signal as input signals respectively, calculates a digital temperature signal according to the first digital signal and the second digital signal to obtain a digital temperature signal, and outputs the digital temperature signal as an output signal of the two-step temperature sensor circuit 10.
It should be noted that, when performing analog-to-digital conversion processing on the analog residual signal, the fine conversion ADC module 13 of this embodiment firstly adjusts according to the bias current output by the bias current adjustment module 12, so that the power consumption and the utilization rate of the temperature sensor can be optimized within the entire temperature range of the temperature sensor.
In this embodiment, the coarse conversion ADC module 11 may be a successive approximation analog-to-digital converter, a pipelined converter or a flash converter, and it can be understood that although the accuracy of the coarse conversion ADC module 11 is not high, the conversion speed thereof is very fast, and the analog temperature signal can be rapidly and coarsely converted once. The fine conversion ADC module 13 of the present embodiment is an analog-to-digital converter of sigma-delta type, and it can be understood that after the fine conversion is performed by the fine conversion ADC module 13, the temperature measurement accuracy can be achieved very accurately.
More specifically, assume that the analog temperature signal X generated by the thermometric device decreases with increasing temperature, as shown in FIG. 2, from-40 deg.C to 125 deg.C, the analog temperature signal X varies from 20 to 5. The coarse conversion ADC block 11 is operative to localize the analog temperature signal X between n and n +1, but the width of each cell is still large, and alternatively the temperature for each cell may be between 5 ℃ and 10 ℃, in this embodiment approximately 10 ℃. After the position interval where the analog temperature signal is located is determined by the coarse conversion ADC module 11, finer conversion can be performed by the fine conversion ADC module 13 based on the position interval. In this embodiment, the fine conversion ADC module 13 may divide the grid of n +1 determined by the coarse conversion ADC module 11 into 29And determining the value of the analog temperature signal X in a small grid, wherein the temperature of the small grid is about 0.01-0.02 ℃, and very accurate temperature measurement precision can be achieved.
It should be noted that, in the embodiment of the present invention, the temperature indicated by each grid divided by the coarse conversion ADC module 11 and the fine conversion ADC module 13 is not limited, and the division may be specifically performed according to actual requirements.
In one embodiment of the present invention, as shown in FIG. 3, the enable signal EN, the clock signal CLK, the comparator signal CLK _ COMP, the comparator output period, and the transition pattern are represented, respectively. After the two-step temperature sensor circuit starts to work, the coarse conversion ADC module completes the coarse conversion of the analog temperature signal after 5 clock cycles; the result of the conversion at this point represents a relatively coarse temperature, but with sufficient accuracy to help regulate the power consumption of the sensor circuit. After the coarse switching, the current regulation can be performed and then the fine switching can be performed. It should be noted that the specific number of clock cycles is related to the type of the coarse-conversion ADC module and the temperature indicated by each scale, and is not limited by the embodiment.
In some embodiments of the present invention, the bias current adjusting module includes a current adjustment signal generating unit for generating a current adjustment signal according to the first digital signal, and a bias current generating unit for generating a bias current according to the current adjustment signal.
Specifically, the bias current adjusting module in this embodiment may include a current adjustment signal generating unit and a bias current generating unit, where the current adjustment signal generating unit may be configured to receive a first digital signal sent by the coarse-conversion ADC module, generate a corresponding current adjustment signal according to the first digital signal, and send the current adjustment signal to the bias current generating unit, and the bias current generating unit may generate a bias current according to the signal after receiving the current adjustment signal, and send the bias current to the fine-conversion ADC module, so that the fine-conversion ADC module may process the analog residual signal according to the bias current to output a second digital signal.
In some embodiments of the present invention, as shown in fig. 4, the current adjusting signal generating unit may obtain the switch control signal corresponding to the bias adjusting power supply by using a look-up table 121 to control the bias current generating unit 122 to generate the bias current.
Specifically, the coarse conversion ADC module 11 of the embodiment may be a SAR ADC (successive approximation analog-to-digital converter), the fine conversion ADC module 13 may be a sigma-delta ADC, the output module 14 includes a register, and the bias current adjusting module 12 may include a lookup table 121 and a bias current generating unit 122.
More specifically, after the analog temperature signal output by the temperature measuring device is input to the SAR ADC 11, the SAR ADC 11 processes the analog temperature signal to generate a first digital signal and an analog residual signal, and the first digital signal may be sent to the lookup table 121, so that the lookup table 121 may obtain a switch control signal corresponding to the offset adjustment power supply, and then the switch control signal is used to control the offset current generating unit 122 to generate the offset current.
It should be noted that, in this embodiment, a lookup table may be preset and then stored in the non-volatile storage device of the chip, where the lookup table includes a corresponding relationship between the current temperature value and the optimal bias current of the fine converter sigma-delta ADC, and the bias current generating unit may generate different bias currents according to the lookup table.
In this embodiment, as shown in fig. 5, the bias current generating unit includes a current source, a first transistor, and N second transistors.
The drain electrode of the first transistor is connected with the grid electrode and then connected to a current source; the drains of the second transistors are connected together to serve as the output end of the bias current generation unit, the grid of each second transistor is connected to the drain of the first transistor through the first switch and is connected to the source of the first transistor through the second switch, the sources of the second transistors are connected together and then are connected with the source of the first transistor and are connected with the ground, and N is a positive integer.
Specifically, referring to fig. 1, 4 and 5, the lookup table 121 changes the switching states of s 0-sn and s0_ n-s 1_ n according to the result of the coarse conversion ADC module 11 and the preset corresponding relationship between the temperature and the current control, where s 0-sn corresponds to the first switch of the bias current generating unit 122, and s0_ n-s 1_ n corresponds to the second switch of the bias current generating unit 122. The switch control signal corresponding to the first switch is opposite to the switch control signal corresponding to the second switch, i.e., s0_ n is the inverted signal of s0, s1_ n is the inverted signal of s1, and so on. In the circuit of the bias current generating unit 122, the first transistor and the second transistor are both NMOS transistors, and if s0 is 0, the NMOS transistor in the branch is in an off state, and the current of the branch is in the off state and is not added to the total current, so that the current provided by the fine converter is reduced; and if the current is 1, the NMOS tube in the branch is in an open state and forms a current mirror with the leftmost NMOS tube, the current of the branch is the proportion copy of the leftmost current source, and the current is added into the total bias current so as to be provided for the fine conversion ADC module, and the purpose of adjusting the current of the fine conversion ADC module is achieved.
It should be noted that the first transistor and the second transistor of this embodiment may also be PMOS transistors, and the specific operation mode thereof may be adjusted by referring to the operation mode of NMOS transistors, which is not described herein again.
Referring to fig. 4, the output module includes a register, and the register shifts the first digital signal to the left by the same number of bits as the resolution of the fine conversion ADC module, and then superimposes the first digital signal on the second digital signal to obtain a digital temperature signal.
Specifically, after the fine conversion ADC module completes processing the analog residual signal according to the bias current, a second digital signal may be generated and sent to the register 14, and the register 14 may perform superposition processing on the second digital signal and the first digital signal processed by the coarse conversion ADC module 11 to obtain a digital temperature signal. More specifically, the register 14 may first shift the first digital signal to the left to obtain a specific temperature value corresponding to the lower limit of the interval where the analog temperature signal is located, and then add the temperature value corresponding to the second digital signal to the lower limit temperature value of the interval, so as to obtain a digital temperature signal, and output the digital temperature signal.
It should be noted that, under the condition that the bias current adjusting module is not used, that is, the bias current is a fixed value, the transconductance g of the amplifier input pair tubemThe simulation result of the relationship with the temperature change is shown in FIG. 6, g at room temperature (25 deg.C)mIs 1.2 times of that at 120 ℃, and g is under the environment of low temperature (-40 ℃)mIs 1.44 times higher than at 120 ℃. The accuracy index of the temperature sensor is determined by the minimum bandwidth of an internal operational amplifier (the same holds true for a comparator), and is calculated by the bandwidth GBW of the amplifier:
bandwidths GBW and gmProportional ratio, where C is the load capacitance at the output of the amplifier, so g at low temperaturemThe increase in the gain causes the actual speed of the amplifier to exceed the speed required by the accuracy index, resulting in wasted power consumption. The bias current adjusting module adjusts the bias current of the sigma-delta ADC according to the output result of the coarse conversion ADC module and the formula
Therefore, the bias is reduced in real time at low temperature, so that the temperature sensor can be in the whole working temperature range, gmMaintained at a stable size, whereinn/pIs the mobility of the NMOS or PMOS input pair transistor in the operational amplifier, and I is the current of the input pair transistor. In this embodiment, the bias current at room temperature can be reduced by about (1.2)2-1)/1.22About 30%, the bias current can be reduced by about (1.44) at-40 deg.C2-1)/1.442About 51%. In the whole conversion process, the working time of the fine conversion ADC module is high, and in this embodiment, the working time of the fine conversion ADC module sigma-delta ADC is more than 95% of the total working time of the two-step temperature sensor circuit. Thus, compared with the related art, the present embodiment reduces the overall power consumption of the temperature sensor by about 95% × 30% ═ 28.5% at normal temperature, and reduces the power consumption by about 95% × 51% × 48% at-40 ℃.
It should be noted that, in the fine conversion stage of the two-step temperature sensor circuit according to the embodiment of the present invention, the bias current adjustment module adjusts the bias current provided to the fine conversion ADC module according to the temperature conversion result of the coarse conversion ADC module, and cancels the effect of the semiconductor device changing with temperature, so that the temperature sensor has a better amplifier speed in the whole temperature range.
In summary, the two-step temperature sensor circuit of the embodiment of the invention can ensure that the temperature sensor circuit can work normally in a temperature range, and simultaneously, the power consumption of the circuit is reduced, and the working performance of the circuit is improved.
Fig. 7 is a block diagram of a chip architecture according to an embodiment of the invention.
Further, as shown in fig. 7, the present invention proposes a chip 100, and the chip 100 includes the two-step temperature sensor circuit 10 in the above-mentioned embodiment.
The chip of the embodiment of the invention can ensure that the temperature sensor circuit can normally work in a temperature range through the two-step temperature sensor circuit in the embodiment, and simultaneously reduces the power consumption of the chip and improves the working performance of the chip.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second", and the like used in the embodiments of the present invention are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated in the embodiments. Thus, a feature of an embodiment of the present invention that is defined by the terms "first," "second," etc. may explicitly or implicitly indicate that at least one of the feature is included in the embodiment. In the description of the present invention, the word "plurality" means at least two or two and more, such as two, three, four, etc., unless specifically limited otherwise in the examples.
In the present invention, unless otherwise explicitly stated or limited by the relevant description or limitation, the terms "mounted," "connected," and "fixed" in the embodiments are to be understood in a broad sense, for example, the connection may be a fixed connection, a detachable connection, or an integrated connection, and it may be understood that the connection may also be a mechanical connection, an electrical connection, etc.; of course, they may be directly connected or indirectly connected through intervening media, or they may be interconnected within one another or in an interactive relationship. Those of ordinary skill in the art will understand the specific meaning of the above terms in the present invention according to their specific implementation.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (11)
1. A temperature sensor circuit, comprising:
the coarse conversion ADC module is used for carrying out analog-to-digital conversion on the input analog temperature signal to obtain a first digital signal and an analog quantity residual error signal;
the bias current adjusting module is used for outputting bias current according to the first digital signal;
the fine conversion ADC module is used for carrying out analog-to-digital conversion on the analog quantity residual error signal according to the bias current to obtain a second digital signal;
and the output module is used for outputting a digital temperature signal according to the first digital signal and the second digital signal.
2. The temperature sensor circuit of claim 1, wherein the bias current adjustment module comprises:
a current adjustment signal generation unit for generating a current adjustment signal according to the first digital signal;
and the bias current generating unit is used for generating the bias current according to the current adjusting signal.
3. The circuit of claim 2, wherein the current adjusting signal generating unit obtains the switch control signal corresponding to the bias current by using a look-up table to control the bias current generating unit to generate the bias current.
4. The temperature sensor circuit according to claim 3, wherein the bias current generating unit includes:
a current source;
the drain electrode of the first transistor is connected with the grid electrode and then connected to the current source;
the drain electrodes of the second transistors are connected together to serve as the output end of the bias current generation unit, the grid electrode of each second transistor is connected to the drain electrode of the first transistor through a first switch and is connected to the source electrode of the first transistor through a second switch, the source electrode of each second transistor is connected together and then is connected with the source electrode of the first transistor and is connected with the ground, and N is a positive integer.
5. The temperature sensor circuit according to claim 4, wherein the first transistor and the second transistor are both MOS transistors.
6. The temperature sensor circuit of claim 4, wherein a switch control signal corresponding to the first switch is opposite a switch control signal corresponding to the second switch.
7. The temperature sensor circuit according to any of claims 1-6, wherein the output module comprises a register for shifting the first digital signal to the left by the same number of bits as the resolution of the fine conversion ADC module, and then superimposing the first digital signal with the second digital signal to obtain the digital temperature signal.
8. The temperature sensor circuit of any of claims 1-6, wherein the coarse conversion ADC module is one of a successive approximation analog-to-digital converter, a pipelined converter, and a flash-type converter.
9. The temperature sensor circuit of any of claims 1-6, wherein the fine conversion ADC module is a sigma-delta analog-to-digital converter.
10. The temperature sensor circuit according to any of claims 1-6, wherein the analog temperature signal is obtained by a temperature measuring device, wherein the temperature measuring device is a transistor or a temperature sensing resistor.
11. A chip comprising a temperature sensor circuit according to any one of claims 1-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111406796.7A CN114374390A (en) | 2021-11-24 | 2021-11-24 | Temperature sensor circuit and chip |
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| CN114636484A (en) * | 2022-05-09 | 2022-06-17 | 深圳市航顺芯片技术研发有限公司 | Digital temperature sensor, chip temperature detection system and chip temperature detection method |
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| CN114636484A (en) * | 2022-05-09 | 2022-06-17 | 深圳市航顺芯片技术研发有限公司 | Digital temperature sensor, chip temperature detection system and chip temperature detection method |
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