CN114374070B - high-Q-value sapphire microwave cavity - Google Patents
high-Q-value sapphire microwave cavity Download PDFInfo
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- CN114374070B CN114374070B CN202111627500.4A CN202111627500A CN114374070B CN 114374070 B CN114374070 B CN 114374070B CN 202111627500 A CN202111627500 A CN 202111627500A CN 114374070 B CN114374070 B CN 114374070B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/06—Cavity resonators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Abstract
The invention relates to a high Q value sapphire microwave cavity, comprising: the metal shielding cavity consists of a cavity body and an end cover; a first sapphire crystal; a second sapphire crystal; the coupling devices are respectively fixed on two opposite side walls of the metal shielding cavity, are respectively close to the first sapphire crystal and the second sapphire crystal, are arranged on opposite sides and are used for signal input and output coupling; a fixing screw; the fixing bolt is fixed on the end cover of the metal shielding cavity through the fixing bolt; the sapphire crystal and the sapphire crystal are respectively placed in the fixing screws and are suspended in the metal shielding cavity through the fixing screws. Compared with the existing sapphire microwave cavity, the microwave cavity has the advantages of being high in Q value, being suppressed in cavity interference modes such as degenerate modes and the like.
Description
Technical Field
The invention belongs to the technical field of microwave frequency sources, and particularly relates to a high-Q-value sapphire microwave cavity.
Background
The microwave frequency source with low phase noise and high stability is widely applied to the fields of radar, communication, aerospace, metering, basic physical research and the like. Currently, the microwave sources are mainly obtained by the following ways: 1. conventionally obtained by means of frequency doubling of a standard crystal oscillator (5 MHz or 10 MHz). 2. By designing the resonant frequency of the dielectric oscillator (DRO) in conjunction with the peripheral circuitry. Compared with the two traditional modes, the low-temperature sapphire microwave frequency source has extremely low phase noise (in an X wave band, < -160 dBc/Hz@10kHz) and excellent short-term stability (< 1E-15@1s), and the index is far from that of the traditional microwave source. The high-Q microwave cavity is a core device of a high-performance microwave frequency source, and can reduce the phase noise level of the microwave source and improve the stability index. The low-temperature sapphire microwave source with extremely high stability and phase noise indexes and the common dielectric oscillator (DRO) adopt microwave cavities with higher Q values. The Q value of a microwave cavity adopted by the low-temperature sapphire microwave source reaches F8, and the level of a microwave cavity adopted by the common DRO is also E5. At present, for a low-temperature sapphire microwave frequency source, after the Q value of an existing microwave cavity reaches F8 or even 1E9, the further improvement is very difficult, and the further improvement can only be realized by further improving the surface finish of the sapphire crystal, but the method is limited by the current processing technology level, and the surface finish of the sapphire crystal is very difficult to further improve. That is, the Q value of the existing sapphire microwave cavity reaches the limit, and in order to further improve the frequency stability and the phase noise index of the low-temperature sapphire microwave frequency source, the sapphire microwave cavity with a higher Q value still needs to be developed. Meanwhile, the existing sapphire microwave cavity high-Q whispering gallery modes have degeneracy modes, namely the Q values of the two whispering gallery modes are high, the oscillation frequencies of the two whispering gallery modes are very close, and the two whispering gallery modes are usually different by about tens or hundreds of kHz. Since the frequencies are too close, one mode will have an effect on the other, which cannot be eliminated. Frequency hopping phenomenon easily occurs in the working process of the low-temperature sapphire microwave frequency source, so that the working stability of the microwave source is affected.
Disclosure of Invention
In order to solve the technical problems, the invention provides a sapphire microwave cavity formed by two sapphire crystals, which has the characteristics of high Q value, and suppressed cavity interference modes such as degenerate modes. The high-Q sapphire microwave cavity comprises:
the metal shielding cavity 1 consists of a cavity body and an end cover;
a first sapphire crystal 2;
a second sapphire crystal 3;
the coupling devices 4 are respectively fixed on two opposite side walls of the metal shielding cavity 1, are respectively close to the first sapphire crystal 2 and the second sapphire crystal 3, are arranged on opposite sides and are used for signal input and output coupling;
a set screw 5;
a fixing bolt 6, wherein the fixing bolt 5 is fixed on the end cover of the metal shielding cavity 1 through the fixing bolt 6;
the sapphire crystal 2 and the sapphire crystal 3 are respectively placed in the fixing screws 5, and are suspended in the metal shielding cavity 1 through the fixing screws 5.
The sapphire crystal 2 and the sapphire crystal 3 may be juxtaposed.
The sapphire crystal 2 and the sapphire crystal 3 can be placed in a certain included angle by designing the special-shaped metal shielding cavity 1, so that the central axes of the first sapphire crystal 2 and the second sapphire crystal 3 are in a certain included angle.
The first sapphire crystal 2 and the second sapphire crystal 3 may be cylindrical, annular, or spherical in shape.
The coupling means comprises a coupling probe or a coupling loop.
The cavity shape of the metal shielding cavity 1 can be a cylinder or an elliptic cylinder, and the cavity material can be copper or aluminum.
And the metal shielding cavity 1 is subjected to surface gold plating treatment.
And determining the size parameters of the first sapphire crystal 2 and the second sapphire crystal 3, so that a mode with coincident resonant frequency exists in the two high-order whispering gallery modes. The two sapphire crystals are placed in a metal shielding cavity, and the distance between the two sapphire crystals is adjusted, so that energy can vibrate in the two sapphire crystals at the same time. Energy is coupled into the first sapphire crystal 2 through the coupling device, oscillation is formed, the energy leaks in the oscillation process, the leaked energy is coupled into the second sapphire crystal 3, and the oscillation starting condition of the second sapphire crystal 3 is met, so that simultaneous oscillation starting of the energy in the two sapphire crystals is realized.
The invention has the beneficial effects that:
according to the method for placing the sapphire crystals with the matched parameters in the microwave cavity, energy is simultaneously vibrated in the two sapphire crystals, so that the cavity energy loss is further reduced, and a higher Q value can be obtained. The invention is equivalent to the effect that two single sapphire microwave cavities are connected in series, namely, the second sapphire microwave cavity filters the resonance signal of the first microwave cavity, most of cavity high-order modes are filtered, and the influence of interference modes such as degeneracy modes and the like is restrained. Compared with the existing sapphire microwave cavity, the microwave cavity has the advantages of being high in Q value, being suppressed in cavity interference modes such as degenerate modes and the like.
Drawings
FIG. 1 is a high Q sapphire microwave cavity;
reference numerals:
1: a metal shielding cavity;
2: a first sapphire crystal;
3: a second sapphire crystal;
4: a coupling device;
5: a fixing screw;
6: and (5) fixing bolts.
Detailed description of the invention
Specifically, the high-Q sapphire microwave cavity has the advantages of high Q value and few spurious modes, and includes: the metal shielding cavity 1, the first sapphire crystal 2, the second sapphire crystal 3, the coupling device 4, the fixing screw 5 and the fixing bolt 6. The metal shielding cavity consists of a cavity body and an end cover, wherein the cavity body comprises and is not limited to a cylinder and an elliptic cylinder, the cavity body comprises and is not limited to metals such as copper, aluminum and the like, and the surface of the cavity body is plated with gold and the like. The shapes of the first sapphire crystal 2 and the second sapphire crystal 3 comprise, but are not limited to, cylindrical, annular and spherical, the first sapphire crystal 2 and the second sapphire crystal 3 are respectively placed in a fixing screw 5, the fixing screw 5 is suspended in the metal shielding cavity 1, the fixing screw 5 is fixed on an end cover of the metal shielding cavity 1 through a fixing bolt 6, the first sapphire crystal 2 and the second sapphire crystal 3 can be placed in parallel, and the central axes of the first sapphire crystal 2 and the second sapphire crystal 3 can be placed in a certain included angle through designing the special-shaped metal shielding cavity 1. The coupling means 4 typically comprise a coupling probe or coupling ring fixed to the wall of the metallic shielding cavity 1, close to the first sapphire crystal 2 and the second sapphire crystal 3, respectively, mounted on opposite sides for signal in-out coupling.
Through simulation calculation, the size parameters of the first sapphire crystal 2 and the second sapphire crystal 3 are determined, so that a mode with coincident resonant frequency exists in the two high-order whispering gallery modes. The two sapphire crystals are placed in a metal shielding cavity, and the distance between the two sapphire crystals is adjusted, so that energy can vibrate in the two sapphire crystals at the same time. Energy is coupled into the first sapphire crystal 2 through the coupling device, oscillation is formed, the energy leaks in the oscillation process, the leaked energy is coupled into the second sapphire crystal 3, and the oscillation starting condition of the second sapphire crystal 3 is met, so that simultaneous oscillation starting of the energy in the two sapphire crystals is realized. The invention further reduces the energy loss of the cavity and can obtain a higher Q value. The invention is equivalent to the effect that two single sapphire microwave cavities are connected in series, namely, the second sapphire microwave cavity filters the resonance signal of the first microwave cavity, most of cavity high-order modes are filtered, and the influence of interference modes such as degeneracy modes and the like is restrained.
In use, the installation is performed according to fig. 1. And observing the resonant mode of the microwave cavity by using a vector network analyzer, and finely adjusting the distance between two gemstones until the Q value of the whispering gallery mode reaches an optimal value.
Taking an X-band sapphire microwave cavity as an example, the specific implementation modes are as follows:
according to simulation results, the sapphire crystal 2 is a cylinder, the size is 13mm in radius and 51mm in height, the sapphire crystal 3 is a cylinder, the size is 11.5mm in radius and 51mm in height, in the installation process, the distance between the two crystals is about 7mm, and the cylindrical axes are installed in parallel and are subjected to fine adjustment in the test process. The metal shielding cavity is made of pure copper and is elliptic cylindrical. The coupling device adopts coupling rings which are positioned at two ends of the elliptic cylinder.
The method comprises the steps of installing a sapphire crystal and a coupling device according to the sequence in the figure, connecting the coupling device by using a vector network analyzer, testing the whispering gallery mode, and obtaining the whispering gallery mode through fine adjustment of the position of the sapphire crystal, wherein the situation is as follows: mode frequency 9.6GHz, Q9E 9. There is no interference mode such as degenerate mode near the whispering gallery mode.
It should be understood that the detailed description of the technical solution of the present invention, given by way of preferred embodiments, is illustrative and not restrictive. Modifications and combinations of the technical solutions described in the embodiments or equivalent substitutions of some technical features thereof can be made by those skilled in the art on the basis of the present description; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (8)
1. A high Q sapphire microwave cavity comprising:
the metal shielding cavity (1) consists of a cavity body and an end cover;
a first sapphire crystal (2);
a second sapphire crystal (3);
determining the size parameters of the first sapphire crystal (2) and the second sapphire crystal (3), enabling a mode with coincident resonant frequencies to exist in the two high-order whispering gallery modes, placing the two sapphire crystals in a metal shielding cavity, and adjusting the distance between the two sapphire crystals to enable energy to vibrate in the two sapphire crystals at the same time;
the coupling devices (4) are respectively fixed on two opposite side walls of the metal shielding cavity (1), are respectively close to the first sapphire crystal (2) and the second sapphire crystal (3), are arranged on opposite sides and are used for signal input and output coupling;
a set screw (5);
the fixing bolt (6), the fixing screw (5) is fixed on the end cover of the metal shielding cavity (1) through the fixing bolt (6);
the sapphire crystal (2) and the sapphire crystal (3) are respectively placed in the fixing screws (5), and are suspended in the metal shielding cavity (1) through the fixing screws (5).
2. The high Q sapphire microwave cavity of claim 1, wherein:
the first sapphire crystal (2) and the second sapphire crystal (3) are arranged in parallel.
3. The high Q sapphire microwave cavity of claim 1, wherein:
the first sapphire crystal (2) and the second sapphire crystal (3) are placed in a certain included angle through designing the special-shaped metal shielding cavity (1), so that the central axes of the first sapphire crystal (2) and the second sapphire crystal (3) are in a certain included angle.
4. A high Q sapphire microwave cavity according to claim 2 or 3, wherein:
the first sapphire crystal (2) and the second sapphire crystal (3) are cylindrical, annular or spherical in shape.
5. The high Q sapphire microwave cavity of claim 4, wherein:
the coupling means comprises a coupling probe or a coupling loop.
6. The high Q sapphire microwave cavity of claim 5, wherein:
the cavity of the metal shielding cavity (1) is cylindrical or elliptic cylindrical.
7. The high Q sapphire microwave cavity of claim 6, wherein:
the cavity material of the metal shielding cavity (1) is copper or aluminum.
8. The high Q sapphire microwave cavity of claim 6, wherein:
and the metal shielding cavity (1) is subjected to surface gold plating treatment.
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| CN114374070B true CN114374070B (en) | 2023-05-23 |
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| CN106998205A (en) * | 2017-04-01 | 2017-08-01 | 北京无线电计量测试研究所 | A kind of coefficient of coup regulation sapphire microwave source and adjusting method |
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| CN101718966B (en) * | 2009-10-30 | 2011-07-20 | 中国科学院上海天文台 | Active atomic clock of sapphire resonant cavity and method for fabricating resonant cavity |
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| CN106998205A (en) * | 2017-04-01 | 2017-08-01 | 北京无线电计量测试研究所 | A kind of coefficient of coup regulation sapphire microwave source and adjusting method |
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