CN114371180A - Defect detection method and system for mask - Google Patents
Defect detection method and system for mask Download PDFInfo
- Publication number
- CN114371180A CN114371180A CN202210053970.2A CN202210053970A CN114371180A CN 114371180 A CN114371180 A CN 114371180A CN 202210053970 A CN202210053970 A CN 202210053970A CN 114371180 A CN114371180 A CN 114371180A
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- optical unit
- extreme ultraviolet
- mask
- ultraviolet light
- defect detection
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- 238000001514 detection method Methods 0.000 title claims abstract description 53
- 230000007547 defect Effects 0.000 title claims abstract description 48
- 230000003287 optical effect Effects 0.000 claims abstract description 49
- 210000001747 pupil Anatomy 0.000 claims abstract description 21
- 150000001875 compounds Chemical class 0.000 claims description 29
- 238000005286 illumination Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 230000001427 coherent effect Effects 0.000 description 4
- 230000003044 adaptive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
Abstract
According to the defect detection method and the defect detection system for the mask, extreme ultraviolet light beams enter the optical unit in an incident mode, the optical unit changes pupil distribution of the incident extreme ultraviolet light beams to obtain resolution suitable for detection conditions, and the extreme ultraviolet light beams detect defects of the mask to be detected.
Description
Technical Field
The invention belongs to the optical detection technology, and particularly relates to a mask defect detection method and a mask defect detection system.
Background
Defect-free EUV (extreme ultraviolet) mask fabrication is one of the key issues that limit the mass production of EUV lithography. EUV mask defect detection is therefore a key core technology for implementing EUV lithography. EUV mask defects can be classified into amplitude type defects and phase type defects, with phase type defects being the most important defects. Because the phase defect is caused by the distortion of the multilayer structure of the EUV mask, the phase defect needs to penetrate through the multilayer structure for detection, and the traditional detection method based on deep ultraviolet or ultraviolet cannot meet the requirement and needs to utilize the working wavelength for detection.
For this reason, researchers have utilized methods for defect detection through multilayer structures based on light sources in the EUV band, most typically dark-field detection methods based on Schwarzschild optical systems. The method mainly comprises two curved mirrors and a plane mirror, wherein the plane mirror can shield reflected light besides having a turning effect on incident light, and the two curved mirrors collect scattered light generated by defects to a charge-coupled device (CCD). The method has the defects that the curved surface reflector cannot be too close to the mask plate for defect detection due to the existence of the flat surface reflector, so that the receiving NA (numerical aperture) of defect scattered light is limited, and the resolution capability of the system is limited. Therefore, a method is needed to further improve the resolution of the detection system without changing the NA, even relaxing the strict requirements of the structure on the NA.
Disclosure of Invention
In view of the above, it is necessary to provide a method and a system for detecting defects on a reticle, which improve the resolution of the detection system.
In order to solve the problems, the invention adopts the following technical scheme:
one of the objectives of the present application is to provide a method for detecting defects of a mask, comprising the following steps:
the extreme ultraviolet light beam enters the optical unit;
the optical unit changes the pupil distribution of the incident extreme ultraviolet light beam to obtain the resolution adapted to the detection condition;
and the extreme ultraviolet beam detects the defects of the mask to be detected.
In some of these embodiments, the optical unit comprises coherence sheets of different coherence factors, which are mounted on a rotating disk, which is positioned in place in the optical path by rotation of the rotating disk.
In some of these embodiments, the rotating disk is located at the stop.
In some embodiments, the optical unit includes a field compound eye and a diaphragm compound eye arranged along the exit direction of the extreme ultraviolet light beam, and multiple illumination modes are realized at the exit pupil of the optical unit by matching the positions of the field compound eye and the diaphragm compound eye.
Another object of the present application is to provide a mask defect detection system, comprising:
a light source module including a light source for providing an extreme ultraviolet light beam;
an optical unit that can change a pupil distribution of an incident extreme ultraviolet light beam to obtain a resolution adapted to a detection situation;
the detection unit is provided with a mask to be detected, and the extreme ultraviolet light beam detects defects of the mask to be detected.
In some of these embodiments, the optical unit comprises coherence sheets of different coherence factors, which are mounted on a rotating disk, which is positioned in place in the optical path by rotation of the rotating disk.
In some of these embodiments, the rotating disk is located at the stop.
In some embodiments, the optical unit includes a field compound eye and a diaphragm compound eye arranged along the exit direction of the extreme ultraviolet light beam, and multiple illumination modes are realized at the exit pupil of the optical unit by matching the positions of the field compound eye and the diaphragm compound eye.
The technical scheme adopted by the application has the following effects:
according to the defect detection method and the defect detection system for the mask, extreme ultraviolet light beams enter the optical unit in an incident mode, the optical unit changes pupil distribution of the incident extreme ultraviolet light beams to obtain resolution suitable for detection conditions, and the extreme ultraviolet light beams detect defects of the mask to be detected.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments of the present invention or in the description of the prior art will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flowchart illustrating steps of a method for detecting defects on a reticle according to embodiment 1 of the present invention.
FIG. 2 is a rotary disk carrying different coherence factor coherence flakes according to example 1 of the present invention.
Fig. 3 provides an illumination system with different illumination modes according to embodiment 1 of the present invention.
Fig. 4 is a schematic diagram of arrangement of compound iris eyes provided in embodiment 1 of the present invention.
Fig. 5 is a schematic diagram of arrangement of compound iris eyes provided in embodiment 1 of the present invention.
Fig. 6 is a schematic diagram of arrangement of compound iris eyes provided in embodiment 1 of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "horizontal", "inside", "outside", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments.
Example 1
Referring to fig. 1, a flowchart illustrating a method for detecting defects on a reticle according to the present application includes the following steps:
step S110: the extreme ultraviolet light beam is incident into the optical unit.
Step S120: the optical unit changes the pupil distribution of the incident extreme ultraviolet light beam to obtain a resolution adapted to the detection situation.
Please refer to fig. 2, which is a schematic structural diagram of the optical unit according to an embodiment of the present disclosure.
In this embodiment, the optical unit comprises coherence sheets 110 of different coherence factors, said coherence sheets 110 being mounted on a rotating disc 120, said rotating disc 120 being positioned in position in the optical path by rotation of said rotating disc 120.
It is understood that coherent sheets with different coherence factors are pre-installed on a rotating disk, and the rotating disk is installed at a proper position in the optical path according to the structure of the optical path, such as the stop of the illumination part of the detection system, so that the coherent sheets can be turned into the optical path for application according to the detection requirement, thereby changing the pupil distribution and obtaining the resolution adapted to the detection situation.
Please refer to fig. 3, which is a schematic structural diagram of the optical unit according to another embodiment of the present disclosure.
In this embodiment, the optical unit includes a field compound eye 130 and a diaphragm compound eye 140 arranged along the exit direction of the extreme ultraviolet light beam, and multiple illumination modes are implemented at the exit pupil of the optical unit by matching the positions of the field compound eye 130 and the diaphragm compound eye 140, so that an adaptive pupil is flexibly selected according to a detection condition.
Please refer to fig. 4, 5 and 6, which respectively show the arrangement shape of the compound aperture stop eye, wherein the shaded portion represents the position of the compound aperture stop eye 140.
Step S130: and the extreme ultraviolet beam detects the defects of the mask to be detected.
According to the defect detection method and the defect detection system for the mask, the pupil distribution, namely the pupil function, is changed according to the requirements of different detection conditions on the resolution, so that the resolution of defect detection is improved.
Example 2
Referring to fig. 3 again, the present application further provides a mask defect detection system, including: a light source module including a light source for providing an extreme ultraviolet light beam; an optical unit that can change a pupil distribution of an incident extreme ultraviolet light beam to obtain a resolution adapted to a detection situation; the detection unit is provided with a mask to be detected, and the extreme ultraviolet light beam detects defects of the mask to be detected.
In some of these embodiments, the optical unit comprises coherence sheets of different coherence factors, which are mounted on a rotating disk, which is positioned in place in the optical path by rotation of the rotating disk.
It is understood that coherent sheets with different coherence factors are pre-installed on a rotating disk, and the rotating disk is installed at a proper position in the optical path according to the structure of the optical path, such as the stop of the illumination part of the detection system, so that the coherent sheets can be turned into the optical path for application according to the detection requirement, thereby changing the pupil distribution and obtaining the resolution adapted to the detection situation.
In some embodiments, the optical unit includes a field compound eye and a diaphragm compound eye arranged along the exit direction of the extreme ultraviolet light beam, and multiple illumination modes are realized at the exit pupil of the optical unit by matching the positions of the field compound eye and the diaphragm compound eye, so that the adaptive pupil can be flexibly selected according to the detection condition.
According to the defect detection system of the mask, extreme ultraviolet light beams enter the optical unit, the optical unit changes pupil distribution of the incident extreme ultraviolet light beams to obtain resolution suitable for detection conditions, and the extreme ultraviolet light beams detect defects of the mask to be detected.
The above are merely examples of the present application and are not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (8)
1. A mask defect detection method is characterized by comprising the following steps:
the extreme ultraviolet light beam enters the optical unit;
the optical unit changes the pupil distribution of the incident extreme ultraviolet light beam to obtain the resolution adapted to the detection condition;
and the extreme ultraviolet beam detects the defects of the mask to be detected.
2. The reticle defect detection method of claim 1, wherein the optical unit comprises coherence sheets of different coherence factors, the coherence sheets being mounted on a rotating disk, the rotating disk being positioned in place in the optical path by rotation of the rotating disk.
3. The reticle defect detection method of claim 2, wherein the rotating disk is located at a stop.
4. The mask defect detection method according to claim 1, wherein the optical unit comprises a field compound eye and a diaphragm compound eye arranged along the emergent direction of the extreme ultraviolet light beam, and multiple illumination modes are realized at the exit pupil of the optical unit by matching the positions of the field compound eye and the diaphragm compound eye.
5. A reticle defect detection system, comprising:
a light source module including a light source for providing an extreme ultraviolet light beam;
an optical unit that can change a pupil distribution of an incident extreme ultraviolet light beam to obtain a resolution adapted to a detection situation;
the detection unit is provided with a mask to be detected, and the extreme ultraviolet light beam detects defects of the mask to be detected.
6. The reticle defect detection system of claim 5, wherein the optical unit comprises coherence sheets of different coherence factors, the coherence sheets being mounted on a rotating disk, the rotating disk being positioned in position in the optical path by rotation of the rotating disk.
7. The reticle defect detection system of claim 6, wherein the rotating disk is located at a stop.
8. The mask defect detection system according to claim 5, wherein the optical unit comprises a field compound eye and a diaphragm compound eye arranged along the emergent direction of the extreme ultraviolet light beam, and multiple illumination modes are realized at the exit pupil of the optical unit through the position matching of the field compound eye and the diaphragm compound eye.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210053970.2A CN114371180A (en) | 2022-01-18 | 2022-01-18 | Defect detection method and system for mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210053970.2A CN114371180A (en) | 2022-01-18 | 2022-01-18 | Defect detection method and system for mask |
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| Publication Number | Publication Date |
|---|---|
| CN114371180A true CN114371180A (en) | 2022-04-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210053970.2A Pending CN114371180A (en) | 2022-01-18 | 2022-01-18 | Defect detection method and system for mask |
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Citations (6)
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|---|---|---|---|---|
| US6411368B1 (en) * | 1997-07-22 | 2002-06-25 | Nikon Corporation | Projection exposure method, projection exposure apparatus, and methods of manufacturing and optically cleaning the exposure apparatus |
| US8204297B1 (en) * | 2009-02-27 | 2012-06-19 | Kla-Tencor Corp. | Methods and systems for classifying defects detected on a reticle |
| CN102629082A (en) * | 2012-04-28 | 2012-08-08 | 北京理工大学 | Design method of extreme ultra-violet lithography compound eye lighting system |
| CN103365073A (en) * | 2012-04-10 | 2013-10-23 | 中国科学院微电子研究所 | Extreme ultraviolet lithographic mask defect detection system |
| CN103424985A (en) * | 2012-05-18 | 2013-12-04 | 中国科学院微电子研究所 | Defect detection system for extreme ultraviolet lithography mask |
| CN110987965A (en) * | 2019-12-26 | 2020-04-10 | 中国科学院微电子研究所 | Mask defect detection method and system based on incoherent light source and zone plate imaging |
-
2022
- 2022-01-18 CN CN202210053970.2A patent/CN114371180A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6411368B1 (en) * | 1997-07-22 | 2002-06-25 | Nikon Corporation | Projection exposure method, projection exposure apparatus, and methods of manufacturing and optically cleaning the exposure apparatus |
| US8204297B1 (en) * | 2009-02-27 | 2012-06-19 | Kla-Tencor Corp. | Methods and systems for classifying defects detected on a reticle |
| CN103365073A (en) * | 2012-04-10 | 2013-10-23 | 中国科学院微电子研究所 | Extreme ultraviolet lithographic mask defect detection system |
| CN102629082A (en) * | 2012-04-28 | 2012-08-08 | 北京理工大学 | Design method of extreme ultra-violet lithography compound eye lighting system |
| CN103424985A (en) * | 2012-05-18 | 2013-12-04 | 中国科学院微电子研究所 | Defect detection system for extreme ultraviolet lithography mask |
| CN110987965A (en) * | 2019-12-26 | 2020-04-10 | 中国科学院微电子研究所 | Mask defect detection method and system based on incoherent light source and zone plate imaging |
Non-Patent Citations (1)
| Title |
|---|
| 中国科学技术协会: "《2020重大科学问题和工程技术难题》", 30 November 2020, 中国科学技术出版社, pages: 75 - 78 * |
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