CN114369806B - Method for realizing near zero running-in ultralow friction - Google Patents
Method for realizing near zero running-in ultralow friction Download PDFInfo
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- CN114369806B CN114369806B CN202210046813.9A CN202210046813A CN114369806B CN 114369806 B CN114369806 B CN 114369806B CN 202210046813 A CN202210046813 A CN 202210046813A CN 114369806 B CN114369806 B CN 114369806B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5886—Mechanical treatment
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Abstract
The application discloses a method for realizing near zero running-in ultralow friction, which comprises the following steps: depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film; disposing the silicon-doped graphene nanocrystalline carbon film on an insulating substrate; a metal friction piece is arranged above the insulating substrate and opposite to the silicon-doped graphene nanocrystalline carbon film; applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; simultaneously, applying a normal load on the silicon-doped graphene nanocrystalline carbon film; and enabling the metal friction piece to be in contact with the silicon-doped graphene nanocrystalline carbon film and carrying out a current-carrying friction test in an atmospheric environment. According to the application, the transfer film is rapidly formed on the metal friction piece by preparing the silicon-doped graphene nanocrystalline carbon film and applying an external electric field in the friction process, so that near zero running-in is induced, and the ultralow friction state of the carbon film can be rapidly realized in the atmospheric environment.
Description
Technical Field
The application relates to the technical field of solid lubrication, in particular to a method for realizing near zero running-in ultralow friction.
Background
Currently, with the development of aviation industry, space technology and the like, the use conditions of lubricants such as high temperature, high speed, high vacuum, ultralow temperature and strong radiation are more severe, and the use limit of lubricating oil and lubricating grease is exceeded, so that special lubricants are required to be used for lubrication. Solid lubrication refers to the use of solid powders, films or monolithic materials to reduce friction and wear on two surfaces that are in relative motion and to protect the surfaces from damage. Carbon films have been used as a solid lubricant coating for disk protection, mold, and tool working surfaces and have been found to provide good performance. However, most carbon films still have a high friction break-in phase, i.e. break-in phase, before the low friction stabilization phase is reached, which not only causes a large energy dissipation, but also severely affects the stability and durability of the whole mechanical system. In general, the friction coefficient of the conventional carbon film and steel is about 0.20, and the smaller the friction coefficient between the two sliding contact surfaces in the actual working process (the ultralow friction state is reached), the smaller the friction abrasion generated in the friction process. The prior art proposes methods for how to achieve ultra-low friction state of carbon films under vacuum or dry inert gas protection.
However, the existing method for realizing the ultralow friction state has strong dependence on the environment, and particularly under the atmospheric environment, the existence of water oxygen molecules and high humidity influences the stability of a friction interface, so that the ultralow friction state of the carbon film is difficult to realize rapidly under the atmospheric environment.
Accordingly, the prior art is still in need of improvement and development.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present application aims to provide a method for realizing near zero running-in and ultra-low friction, which aims to solve the problems that the existing carbon film is difficult to quickly reach an ultra-low friction state in an atmospheric environment, the stability and durability of a mechanical system are affected, and the ultra-low friction state of the carbon film is difficult to quickly realize.
The technical scheme of the application is as follows:
a method of achieving near zero run-in ultra-low friction, comprising:
depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;
disposing the silicon-doped graphene nanocrystalline carbon film on an insulating substrate;
a metal friction piece is arranged above the insulating substrate and opposite to the silicon-doped graphene nanocrystalline carbon film;
applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; simultaneously, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;
and enabling the metal friction piece to be in contact with the silicon-doped graphene nanocrystalline carbon film and carrying out a current-carrying friction test in an atmospheric environment.
The method for realizing near zero running-in ultralow friction comprises the steps that the silicon-doped graphene nanocrystalline carbon film is prepared by adopting an electron cyclotron resonance plasma nano surface processing system; the step of depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film specifically comprises the following steps:
providing a conductive silicon wafer;
fixing the conductive silicon chip on a substrate frame of the electron cyclotron resonance plasma nano surface processing system;
moving the substrate frame into a pre-vacuum chamber of the electron cyclotron resonance plasma nano surface machining system, vacuumizing, and then feeding the substrate frame into a main vacuum chamber of the electron cyclotron resonance plasma nano surface machining system;
to reduce the air pressure in the main vacuum chamber to 8 multiplied by 10 -5 Pa, opening circulating cooling water, introducing argon, and adjusting the air pressure in the main vacuum chamber;
setting the currents of three magnetic coils of the electron cyclotron resonance plasma nano surface processing system to be 40A, 40A and 48A respectively, setting the microwave power to be 500W, setting the substrate bias voltage to be-50V, and cleaning the conductive silicon wafer for 2-4 minutes;
and turning on power supplies of a carbon target and a silicon target of the electron cyclotron resonance plasma nano surface processing system, setting the voltage of the carbon target to be-500V, setting the substrate bias voltage to be 40-80V, and depositing a carbon film containing graphene nanocrystals in an electron irradiation mode, wherein the current of the silicon target is 0.3-0.7A, and depositing for 30-60 minutes to obtain the silicon-doped graphene nanocrystal carbon film.
The method for realizing near zero running-in ultra-low friction, wherein the adjusting the air pressure in the main vacuum chamber specifically comprises: and regulating the air pressure in the main vacuum chamber to 0.1 Pa.
The method for realizing near zero running-in ultralow friction comprises the steps of enabling the silicon concentration of the silicon doped graphene nanocrystalline carbon film to be 3% -13%, enabling the thickness to be 150-300 nanometers and enabling the surface roughness to be 0.102 nanometer.
The method for realizing near zero running-in ultralow friction comprises the step of adopting a metal friction piece which is one of a 304 stainless steel piece, an iron casting piece and a carbon steel piece.
The method for realizing near zero running-in ultralow friction comprises the steps of enabling the sliding speed of the metal friction piece in the friction process to be 0-120 mm/s, and enabling the friction stroke to be 20 mm.
The method for realizing near zero running-in ultralow friction comprises the step of setting the current of the direct current electric field to be 0.5-1.0A.
The method for realizing near zero running-in ultralow friction comprises the step of setting the normal load to be 5-7N.
The application also discloses a friction test device for realizing the method for realizing near zero running-in ultralow friction, which comprises an insulating substrate, a metal friction piece, a power supply and a weight tray, wherein the insulating substrate is used for bearing the silicon-doped graphene nanocrystalline carbon film; the metal friction piece is arranged above the insulating substrate and opposite to the silicon-doped graphene nanocrystalline carbon film; the power supply is arranged on the insulating substrate, is connected with the metal friction piece and the conductive silicon wafer and is used for applying a direct current electric field; the weight tray is arranged at the top end of the metal friction piece and used for accommodating weights so as to apply normal load to the silicon-doped graphene nanocrystalline carbon film.
The friction test device further comprises a fixing component arranged on the insulating substrate, wherein the fixing component comprises a conductive copper adhesive tape and a double-sided cloth adhesive tape, the conductive copper adhesive tape is electrically connected with the power supply, and the silicon-doped graphene nanocrystalline carbon film is fixed on the conductive copper adhesive tape; the double-sided tape is used for fixing the conductive copper tape.
Compared with the prior art, the embodiment of the application has the following advantages:
according to the method disclosed by the application, firstly, the silicon doped graphene nanocrystalline carbon film with the ultra-smooth surface is prepared on the conductive silicon wafer, so that the friction coefficient of the friction contact surface is reduced, then the silicon doped graphene nanocrystalline carbon film is arranged on the insulating substrate, the metal friction piece generates pressure on the silicon doped graphene nanocrystalline carbon film by adding a normal load on the metal friction piece, a direct current electric field is applied between the metal friction piece and the silicon doped graphene nanocrystalline carbon film in the friction process, the applied electric field can promote the rapid formation of a transfer film on the metal friction piece, the running-in period of the metal friction piece and the silicon doped graphene nanocrystalline carbon film is shortened, the near zero running-in is realized, and the ultra-low friction state is rapidly reached; in general, the ultralow friction state of the carbon film is realized rapidly in the atmospheric environment, and meanwhile, the friction loss of the carbon film and the metal friction piece is reduced, so that the friction interface tends to be stable more rapidly, the stability and the durability of a mechanical system are improved, and the ultralow friction state of the carbon film is realized rapidly.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to the drawings without inventive effort to those skilled in the art.
FIG. 1 is a flow chart of a method of achieving near zero break-in ultra low friction in the present application;
FIG. 2 is a flow chart of preparing a silicon-doped graphene nanocrystalline carbon film in a method for achieving near zero running-in ultra-low friction in the present application;
FIG. 3 is a graph of friction test results for a method of achieving near zero run-in ultra low friction in accordance with the present application;
FIG. 4 is a schematic structural view of a friction test device according to the present application.
Wherein, 10, insulating base; 20. a metal friction member; 30. a power supply; 40. a weight tray; 50. and fixing the assembly.
Detailed Description
In order to make the present application better understood by those skilled in the art, the following description will make clear and complete descriptions of the technical solutions of the embodiments of the present application with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Referring to fig. 1, in an embodiment of the present application, a method for realizing near zero running-in ultra-low friction is disclosed, which includes:
s100, depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;
s200, arranging the silicon-doped graphene nanocrystalline carbon film on an insulating substrate;
s300, arranging a metal friction piece above the insulating substrate and opposite to the silicon-doped graphene nanocrystalline carbon film;
s400, applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; simultaneously, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;
s500, enabling the metal friction piece to be in contact with the silicon-doped graphene nanocrystalline carbon film and carrying out current-carrying friction test in an atmospheric environment.
In the method disclosed by the embodiment, firstly, a silicon doped graphene nanocrystalline carbon film with an ultra-smooth surface is prepared on a conductive silicon wafer, so that the friction coefficient of a friction contact surface is reduced, then the silicon doped graphene nanocrystalline carbon film is arranged on an insulating substrate, a normal load is added on a metal friction piece to enable the metal friction piece to generate pressure on the silicon doped graphene nanocrystalline carbon film, a direct current electric field is applied between the metal friction piece and the silicon doped graphene nanocrystalline carbon film in the friction process, the applied electric field can promote a transfer film to be formed on the metal friction piece rapidly, the running-in period of the metal friction piece and the silicon doped graphene nanocrystalline carbon film is shortened, near zero running-in is realized, and an ultra-low friction state is achieved rapidly; in general, the ultralow friction state of the carbon film is realized rapidly in the atmospheric environment, and meanwhile, the friction loss of the carbon film and the metal friction piece is reduced, so that the friction interface tends to be stable more rapidly, the stability and the durability of a mechanical system are improved, and the ultralow friction state of the carbon film is realized rapidly.
As shown in fig. 2, as an implementation manner of this example, the preparation of the silicon doped graphene nanocrystalline carbon film by using an Electron Cyclotron Resonance (ECR) plasma nano surface processing system is disclosed; the step S100 specifically includes:
s101, providing a conductive silicon wafer;
s102, fixing the conductive silicon chip on a substrate frame of the ECR plasma nano surface processing system;
s103, moving the substrate frame into a pre-vacuum chamber of the ECR plasma nano surface processing system, vacuumizing, and then feeding the substrate frame into a main vacuum chamber of the ECR plasma nano surface processing system;
s104, waiting for the air pressure in the main vacuum chamber to be reduced to 8 multiplied by 10 -5 Pa, opening circulating cooling water, introducing argon, and adjusting the air pressure in the main vacuum chamber;
s105, setting the currents of three magnetic coils of the ECR plasma nano surface processing system to be 40A, 40A and 48A respectively, setting the microwave power to be 500W, setting the substrate bias voltage to be-50V, and cleaning the conductive silicon wafer for 2-4 minutes;
s106, turning on power supplies of a carbon target and a silicon target of the electron cyclotron resonance plasma nano surface processing system, setting the voltage of the carbon target to be-500V, setting the substrate bias voltage to be 40-80V, and depositing a carbon film containing graphene nanocrystals in an electron irradiation mode, wherein the current of the silicon target is 0.3-0.7A, and depositing for 30-60 minutes to obtain the silicon-doped graphene nanocrystal carbon film.
The ECR (electron cyclotron resonance) plasma nano surface processing system disclosed in the embodiment is a processing technology based on an ECR plasma source, wherein after a conductive silicon wafer with the specification of 25 multiplied by 0.5 millimeter is sent into a pre-vacuum chamber, air in the pre-vacuum chamber is firstly exhausted through vacuumizing to avoid the influence of impurity gas on a sputtering process, then the conductive silicon wafer is sent into a main vacuum chamber, argon is introduced, after the working pressure is regulated to 0.1 Pa, three magnetic coil currents are respectively set to 40, 40 and 48A, the microwave power is 500W, after the plasma is stabilized, the substrate bias voltage is set to-50V, the substrate is cleaned for about 3 minutes by utilizing argon ions in the plasma, so that the surface of the conductive silicon wafer is free of impurities, the electric charges are orderly arranged, and high-density plasma can be uniformly generated in the main vacuum chamber through the magnetic fields generated by the three magnetic coils; and then, applying direct current negative bias to the particle source to attract positive ions in the plasma stream to sputter the target material, wherein target material elements generated by sputtering collide with electrons in the plasma stream which do rotary motion to generate ionization, thus obtaining target material ions, and the target material ions move towards the substrate under the action of an electric field generated by a divergent magnetic field, thus obtaining the high-quality film.
In particular, in this example, a silicon target and a carbon target were added for simultaneous sputtering by setting the above-described gas pressure to 8×10 -5 The parameters of Pa, current of 0.3-0.7A, substrate bias of 40-80V, deposition time of 30-60 min and the like are adopted to prepare the silicon doped graphene nanocrystalline carbon film, so that the hybrid carbon film with expected silicon content can be effectively obtained.
Specifically, as another implementation manner of this embodiment, the adjusting the air pressure in the main vacuum chamber specifically includes:
and regulating the air pressure in the main vacuum chamber to 0.1 Pa.
In the practical implementation process of the method disclosed by the embodiment, the air pressure in the main vacuum chamber is regulated to be 0.1 Pa by regulating the flow of the argon, so that the sputtering film forming process can be realized more stably and rapidly.
Specifically, as another implementation mode of the embodiment, the silicon concentration of the silicon doped graphene nanocrystalline carbon film is 3% -13%, and the thickness is 150-300 nanometers, wherein silicon elements introduced into the carbon film can be combined with carbon elements to form silicon carbide compounds, the growth direction of graphene nanocrystalline is changed into random orientation, and the silicon doped graphene nanocrystalline carbon film is promoted to have an ultra-smooth state with the surface roughness of 0.102 nanometers.
The silicon doped graphene nanocrystalline carbon film in the embodiment needs to reach an ultra-smooth state, so that the silicon concentration in the film forming process needs to be controlled not to be too low, and if the silicon concentration is too low, the surface roughness is insufficient and cannot meet the requirement; of course, the silicon concentration cannot be too high, so that the conductivity, the pressure bearing capacity and other physical properties of the silicon doped graphene nanocrystalline carbon film are affected, and the subsequent friction process is not facilitated to be carried out stably.
On the other hand, the thickness of the silicon-doped graphene nanocrystalline carbon film cannot be too small, if the silicon-doped graphene nanocrystalline carbon film is too thin, the silicon-doped graphene nanocrystalline carbon film is easy to break in the friction process, and the stable and long-term operation of a mechanical system is not facilitated; the silicon doped graphene nanocrystalline carbon film is not too thick, and the physical properties of the film layer can be affected if the sputtering film layer is too thick, so that the subsequent friction process is not facilitated to be carried out stably.
Specifically, as another implementation manner of the embodiment, the metal friction member is one of a 304 stainless steel member, an iron casting member and a carbon steel member. The 304 stainless steel piece, the iron casting piece, the carbon steel piece and other components have good electric conductivity, large hardness and good wear resistance, can be used for a long time, can be kept stable in the friction process, have good electric conductivity when an external electric field is applied, can quickly realize the process of forming a transfer film on the surface, and can accelerate to enter an ultralow friction state after the running-in period of the friction process.
Specifically, as another implementation mode of the embodiment, the sliding speed of the metal friction piece in the friction process is 0-120 mm/s, and the friction stroke is 20 mm.
Specifically, as another implementation manner of this embodiment, a current of the direct current electric field is disclosed to be 0.5-1.0 a. The applied direct current electric field is unfavorable for overlarge current, is unfavorable for forming a transfer film with good uniformity, affects the running-in time of the metal friction piece and the silicon-doped graphene nanocrystalline carbon film, and can possibly cause breakdown, so that danger is brought and stable operation of a mechanical system is unfavorable; the additional dc battery should not be too small, and if it is less than 0.5 a, it may delay the formation of the transfer film, and even fail to form a complete transfer film, which is disadvantageous for achieving the goal of near zero break-in period.
Specifically, as another implementation mode of the embodiment, the magnitude of the normal load is disclosed as 5-7 newtons. And applying a normal load on the metal friction piece and transmitting the normal load to the silicon-doped graphene nanocrystalline carbon film so as to generate corresponding friction force in the friction process.
Specifically, as another implementation manner of this example, a test procedure of one-time current-carrying friction is disclosed as follows:
and determining friction parameters, wherein the normal load of the metal friction piece is 5N, the friction stroke is 20 mm, the sliding speed is 5 mm/s, and the current intensity output by the direct current power supply is set to be 1.0A.
The friction test result is shown in fig. 3, and can be obtained from the experimental result of current-carrying friction, wherein the friction coefficient of the 150 nm-thickness silicon-doped graphene nanocrystalline carbon film is 0.009 (less than or equal to 0.01) when the normal load is 5 newtons and the current is 1.0 ampere, and the running-in period is 5, namely, near zero running-in is achieved, so that the friction test of the ultralow friction state of the carbon film can be rapidly realized under the atmospheric environment.
As shown in fig. 4, the reciprocating current-carrying friction test device of the present application is used for implementing the method for implementing near zero running-in ultra-low friction as described in any one of the above, wherein the reciprocating current-carrying friction test device comprises an insulating substrate 10, a metal friction member 20, a power supply 30 and a weight tray 40, wherein the insulating substrate 10 is used for carrying a silicon-doped graphene nanocrystalline carbon film; the metal friction piece 20 is arranged above the insulating substrate 10 and opposite to the silicon-doped graphene nanocrystalline carbon film; the power supply 30 is arranged on the insulating substrate 10, and is electrically connected with the metal friction piece 20 and the silicon-doped graphene nanocrystalline carbon film, and is used for applying a direct-current electric field; the weight tray 40 is disposed at the top end of the metal friction member 20, and is used for accommodating weights to apply a normal load to the silicon-doped graphene nanocrystalline carbon film. In order to stabilize the weight tray 40, a through hole may be provided in the center of the weight tray 40 for fixing a metal friction rod.
The reciprocating current-carrying friction test device in the embodiment supplies power through the power supply 30 to provide an external electric field, the weight tray 40 is provided with weights to provide an additional normal load, so that the metal friction piece 20 can be pressed on the silicon-doped graphene nanocrystalline carbon film to perform a friction process with an ultralow friction coefficient, a mechanical system can keep an ultralow friction state in an atmospheric environment and complete work, the requirement on a working environment is reduced, the application occasion of an ultralow friction structure is increased, and the popularization and application value is improved.
Specifically, as an implementation manner of this embodiment, it is disclosed that the friction test device further includes a fixing component disposed on the insulating substrate 10, where the fixing component includes a conductive copper tape and a double-sided tape, the conductive copper tape is electrically connected to the power supply 30, and the silicon doped graphene nanocrystalline carbon film is fixed on the conductive copper tape; the double-sided tape is used for fixing the conductive copper tape.
Specifically, as an implementation manner of this embodiment, the friction test device further includes a base fixing frame, a cantilever beam, and an upper fixing unit, where the insulating substrate 10 is disposed on the base fixing frame, the upper fixing unit is fixed on the cantilever beam and extends to above the insulating substrate 10, and the upper fixing unit includes a metal friction member 20, an internal thread conductive fixture for fixing the metal friction member 20, and an external thread fixing rod for fixing the cantilever beam, where the top of the external thread fixing rod has an internal thread hole and a recess hole with the bottom for placing the metal friction member 20.
In summary, the application discloses a method for realizing near zero running-in ultra-low friction, which comprises the following steps:
s100, depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;
s200, arranging the silicon-doped graphene nanocrystalline carbon film on an insulating substrate;
s300, arranging a metal friction piece above the insulating substrate and opposite to the silicon-doped graphene nanocrystalline carbon film;
s400, applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; simultaneously, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;
s500, enabling the metal friction piece to be in contact with the silicon-doped graphene nanocrystalline carbon film and carrying out current-carrying friction test in an atmospheric environment.
In the method disclosed by the embodiment, firstly, a silicon doped graphene nanocrystalline carbon film with an ultra-smooth surface is prepared on a conductive silicon wafer, so that the friction coefficient of a friction contact surface is reduced, then the silicon doped graphene nanocrystalline carbon film is arranged on an insulating substrate, a normal load is added on a metal friction piece to enable the metal friction piece to generate pressure on the silicon doped graphene nanocrystalline carbon film, a direct current electric field is applied between the metal friction piece and the silicon doped graphene nanocrystalline carbon film in the friction process, the applied electric field can promote a transfer film to be formed on the metal friction piece rapidly, the running-in period of the metal friction piece and the silicon doped graphene nanocrystalline carbon film is shortened, near zero running-in is realized, and an ultra-low friction state is achieved rapidly; in general, the ultralow friction state of the carbon film is realized rapidly in the atmospheric environment, and meanwhile, the friction loss of the carbon film and the metal friction piece is reduced, so that the friction interface tends to be stable more rapidly, the stability and the durability of a mechanical system are improved, and the ultralow friction state of the carbon film is realized rapidly.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other.
It is to be understood that the application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the application is limited only by the appended claims.
The foregoing description of the preferred embodiments of the application is not intended to limit the application to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the application are intended to be included within the scope of the application.
Claims (4)
1. The method for realizing near zero running-in ultralow friction is applied to a friction test device for realizing near zero running-in ultralow friction, and is characterized in that the friction test device comprises:
the insulating substrate is used for bearing the silicon-doped graphene nanocrystalline carbon film;
the metal friction piece is arranged above the insulating substrate and opposite to the position of the silicon-doped graphene nanocrystalline carbon film;
the power supply is arranged on the insulating substrate, is connected with the metal friction piece and the silicon-doped graphene nanocrystalline carbon film and is used for applying a direct-current electric field; and
the weight tray is arranged at the top end of the metal friction piece and used for accommodating weights so as to apply normal load to the silicon-doped graphene nanocrystalline carbon film;
the method for realizing near zero running-in ultralow friction comprises the following steps:
depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;
disposing the silicon-doped graphene nanocrystalline carbon film on an insulating substrate;
a metal friction piece is arranged above the insulating substrate and opposite to the silicon-doped graphene nanocrystalline carbon film;
applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; simultaneously, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;
the metal friction piece is contacted with the silicon-doped graphene nanocrystalline carbon film, and a current-carrying friction test is carried out in an atmospheric environment;
the silicon-doped graphene nanocrystalline carbon film is prepared by adopting an electron cyclotron resonance plasma nano surface processing system; the step of depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film specifically comprises the following steps:
providing a conductive silicon wafer;
fixing the conductive silicon chip on a substrate frame of the electron cyclotron resonance plasma nano surface processing system;
moving the substrate frame into a pre-vacuum chamber of the electron cyclotron resonance plasma nano surface machining system, pre-vacuumizing, and then feeding the substrate frame into a main vacuum chamber of the electron cyclotron resonance plasma nano surface machining system;
to reduce the air pressure in the main vacuum chamber to 8 multiplied by 10 -5 Pa, opening circulating cooling water, introducing argon, and adjusting the air pressure in the main vacuum chamber;
setting the currents of three magnetic coils of the electron cyclotron resonance plasma nano surface processing system to be 40A, 40A and 48A respectively, setting the microwave power to be 500W, setting the substrate bias voltage to be-50V, and cleaning the conductive silicon wafer for 2-4 minutes;
turning on power supplies of a carbon target and a silicon target of the electron cyclotron resonance plasma nano surface processing system, setting the voltage of the carbon target to be-500V, setting the substrate bias voltage to be 40-80V, and depositing a carbon film containing graphene nanocrystals in an electron irradiation mode, wherein the current of the silicon target is 0.3-0.7A, and depositing for 30-60 minutes to obtain a silicon-doped graphene nanocrystal carbon film;
the silicon concentration of the silicon doped graphene nanocrystalline carbon film is 3% -13%, the thickness is 150-300 nanometers, and the surface roughness is 0.102 nanometer; the sliding speed of the metal friction piece in the friction process is 0-120 mm/s, and the friction stroke is 20 mm; the current of the direct current electric field is 0.5-1.0A; the normal load is 5-7 newtons;
and the silicon element in the silicon-doped graphene nanocrystalline carbon film is combined with the carbon element to form a silicon carbide compound, and the growth direction of the graphene nanocrystalline is randomly oriented, so that the silicon-doped graphene nanocrystalline carbon film is enabled to have an ultra-smooth state.
2. The method for achieving near zero running-in ultra low friction according to claim 1, wherein said adjusting the air pressure in said main vacuum chamber comprises:
and regulating the air pressure in the main vacuum chamber to 0.1 Pa.
3. The method of achieving near zero running-in ultra low friction according to claim 1, wherein the metal friction member is one of a 304 stainless steel member, an iron casting, a carbon steel member.
4. The method for realizing near zero running-in ultra-low friction according to claim 1, wherein the friction test device further comprises a fixing component arranged on the insulating substrate, the fixing component comprises a conductive copper tape and a double-sided cloth tape, the conductive copper tape is electrically connected with the power supply, and the silicon-doped graphene nanocrystalline carbon film is fixed on the conductive copper tape; the double-sided tape is used for fixing the conductive copper tape.
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