CN114369806A - Method for realizing near-zero running-in ultralow friction - Google Patents
Method for realizing near-zero running-in ultralow friction Download PDFInfo
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- CN114369806A CN114369806A CN202210046813.9A CN202210046813A CN114369806A CN 114369806 A CN114369806 A CN 114369806A CN 202210046813 A CN202210046813 A CN 202210046813A CN 114369806 A CN114369806 A CN 114369806A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5886—Mechanical treatment
Abstract
The invention discloses a method for realizing near-zero running-in and ultralow friction, which comprises the following steps: depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film; arranging the silicon-doped graphene nano-crystal carbon film on an insulating substrate; arranging a metal friction piece above the insulating substrate at a position opposite to the silicon-doped graphene nanocrystalline carbon film; applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; meanwhile, applying a normal load on the silicon-doped graphene nanocrystalline carbon film; and contacting the metal friction piece with the silicon-doped graphene nanocrystalline carbon film and carrying out a current-carrying friction test in an atmospheric environment. According to the method, the transfer film is rapidly formed on the metal friction piece in a mode of preparing the silicon-doped graphene nano-crystal carbon film and applying an external electric field in the friction process, the near-zero running-in is induced, and the ultralow friction state of the carbon film can be rapidly realized in the atmospheric environment.
Description
Technical Field
The invention relates to the technical field of solid lubrication, in particular to a method for realizing near-zero running-in and ultralow friction.
Background
At present, with the development of the aviation industry, space technology and the like, the use conditions of the lubricant are more severe, such as high temperature, high speed, high vacuum, ultra-low temperature, strong radiation and the like, which exceed the use limit of lubricating oil and lubricating grease, so that a special lubricant must be selected for lubrication. Solid lubrication refers to the use of solid powders, films, or monoliths to reduce friction and wear on two surfaces in relative motion and to protect the surfaces from damage. The carbon film as a solid lubricating coating has been applied to the working surfaces of magnetic disk protection, dies and cutters and has good effect. However, most carbon films still have a high friction break-in phase, i.e. break-in period, before reaching the low friction stable phase, and the friction wear in the break-in period not only causes a large amount of energy dissipation, but also seriously affects the stability and durability of the whole mechanical system. The friction coefficient of a conventional carbon film and a steel material pair against friction is usually about 0.20, and the smaller the friction coefficient between two sliding contact surfaces during actual operation (the ultra-low friction state is reached), meaning the smaller the frictional wear generated during friction. The method proposed by the prior art for how to realize the ultra-low friction state of the carbon film is realized under the protection of vacuum or dry inert gas.
However, the existing method for realizing the ultra-low friction state has strong dependence on the environment, and particularly in the atmospheric environment, the existence of water, oxygen molecules and high humidity influences the stability of the friction interface, so that the ultra-low friction state of the carbon film is difficult to realize rapidly in the atmospheric environment.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a method for realizing near-zero running-in ultralow friction, and aims to solve the problems that the conventional carbon film is difficult to quickly reach an ultralow friction state in an atmospheric environment, the stability and durability of a mechanical system are influenced, and the ultralow friction state of the carbon film is difficult to quickly realize.
The technical scheme of the invention is as follows:
a method of achieving near zero run-in ultra low friction, comprising:
depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;
arranging the silicon-doped graphene nano-crystal carbon film on an insulating substrate;
arranging a metal friction piece above the insulating substrate at a position opposite to the silicon-doped graphene nanocrystalline carbon film;
applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; meanwhile, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;
and contacting the metal friction piece with the silicon-doped graphene nanocrystalline carbon film and carrying out a current-carrying friction test in an atmospheric environment.
The method for realizing the near-zero running-in ultra-low friction is characterized in that the silicon-doped graphene nanocrystalline carbon film is prepared by adopting an electron cyclotron resonance plasma nano surface processing system; the step of depositing the carbon film on the conductive silicon wafer to obtain the silicon-doped graphene nanocrystalline carbon film specifically comprises the following steps:
providing a conductive silicon wafer;
fixing the conductive silicon wafer on a substrate frame of the electron cyclotron resonance plasma nano surface processing system;
moving the substrate frame into a pre-vacuum chamber of the electron cyclotron resonance plasma nano surface processing system, vacuumizing, and then sending into a main vacuum chamber of the electron cyclotron resonance plasma nano surface processing system;
when the air pressure in the main vacuum chamber is reduced to 8 multiplied by 10-5Opening circulating cooling water, introducing argon, and adjusting the air pressure in the main vacuum chamber;
setting the currents of three magnetic coils of the electron cyclotron resonance plasma nano surface processing system to be 40 amperes, 40 amperes and 48 amperes respectively, setting the microwave power to be 500 watts, setting the bias voltage of a substrate to be-50 volts, and cleaning the conductive silicon wafer for 2-4 minutes;
and opening a power supply of a carbon target and a silicon target of the electron cyclotron resonance plasma nano surface processing system, setting the voltage of the carbon target to be-500V and the bias voltage of the substrate to be 40-80V, depositing the carbon film containing the graphene nano-crystals in an electron irradiation mode, setting the current of the silicon target to be 0.3-0.7A, and depositing for 30-60 minutes to obtain the silicon-doped graphene nano-crystal carbon film.
The method for realizing the near-zero running-in ultralow friction specifically comprises the following steps of: the air pressure in the main vacuum chamber was adjusted to 0.1 pa.
The method for realizing the near-zero running-in ultra-low friction is characterized in that the silicon concentration of the silicon-doped graphene nano-crystal carbon film is 3% -13%, the thickness of the silicon-doped graphene nano-crystal carbon film is 150-300 nanometers, and the surface roughness of the silicon-doped graphene nano-crystal carbon film is 0.102 nanometer.
The method for realizing the near-zero running-in ultralow friction is characterized in that the metal friction piece is one of 304 stainless steel piece, iron casting piece and carbon steel piece.
The method for realizing the near-zero running-in ultralow friction is characterized in that the sliding speed of the metal friction piece in the friction process is 0-120 mm/s, and the friction stroke is 20 mm.
The method for realizing the near-zero running-in ultralow friction is characterized in that the current of the direct current electric field is 0.5-1.0A.
The method for realizing the near-zero running-in ultralow friction is characterized in that the normal load is 5-7N.
The application also discloses a friction test device for realizing the method for realizing the near-zero running-in ultralow friction, which comprises an insulating substrate, a metal friction piece, a power supply and a scale pan, wherein the insulating substrate is used for bearing the silicon-doped graphene nano-crystalline carbon film; the metal friction piece is arranged above the insulating substrate and is opposite to the position of the silicon-doped graphene nanocrystalline carbon film; the power supply is arranged on the insulating substrate, is simultaneously connected with the metal friction piece and the conductive silicon wafer and is used for applying a direct current electric field; the weight tray is arranged at the top end of the metal friction piece and used for containing weights so as to apply normal load to the silicon-doped graphene nano crystal carbon film.
The friction test device further comprises a fixing component arranged on the insulating substrate, the fixing component comprises a conductive copper adhesive tape and a double-sided adhesive tape, the conductive copper adhesive tape is electrically connected with the power supply, and the silicon-doped graphene nano-crystalline carbon film is fixed on the conductive copper adhesive tape; the double-sided cloth adhesive tape is used for fixing the conductive copper adhesive tape.
Compared with the prior art, the embodiment of the invention has the following advantages:
according to the method, the silicon-doped graphene nano-crystal carbon film with the super-smooth surface is prepared on the conductive silicon wafer, so that the friction coefficient of a friction contact surface is reduced, the silicon-doped graphene nano-crystal carbon film is arranged on the insulating substrate, the metal friction piece generates pressure on the silicon-doped graphene nano-crystal carbon film by adding a normal load on the metal friction piece, a direct current electric field is applied between the metal friction piece and the silicon-doped graphene nano-crystal carbon film in the friction process, the external electric field can promote a transfer film to be formed on the metal friction piece rapidly, the running-in period of the metal friction piece and the silicon-doped graphene nano-crystal carbon film is shortened, near-zero running-in is realized, and the ultra-low friction state is achieved rapidly; generally speaking, the ultralow friction state of the carbon film is quickly realized in the atmospheric environment, and meanwhile, the friction loss of the carbon film and a metal friction piece is reduced, so that the friction interface quickly tends to be stable, the stability and the durability of a mechanical system are improved, and the ultralow friction state of the carbon film is quickly realized.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of a method of achieving near zero run-in ultra low friction in accordance with the present invention;
FIG. 2 is a flow chart of the preparation of a silicon-doped graphene nanocrystalline carbon film in the method of the present invention for achieving near-zero running-in ultra-low friction;
FIG. 3 is a graph of friction test results for a method of achieving near zero run-in ultra low friction in accordance with the present invention;
FIG. 4 is a schematic structural view of a friction test apparatus according to the present invention.
10, an insulating substrate; 20. a metal friction member; 30. a power source; 40. a weight tray; 50. and (6) fixing the assembly.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, in an embodiment of the present application, a method for achieving near-zero running-in ultra-low friction is disclosed, which includes:
s100, depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;
s200, arranging the silicon-doped graphene nanocrystalline carbon film on an insulating substrate;
s300, arranging a metal friction piece above the insulating substrate at a position opposite to the silicon-doped graphene nanocrystalline carbon film;
s400, applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; meanwhile, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;
s500, enabling the metal friction piece to be in contact with the silicon-doped graphene nanocrystalline carbon film and carrying out current-carrying friction test in an atmospheric environment.
In the method disclosed by the embodiment, the silicon-doped graphene nano-crystal carbon film with the super-smooth surface is prepared on the conductive silicon wafer, so that the friction coefficient of a friction contact surface is reduced, the silicon-doped graphene nano-crystal carbon film is arranged on the insulating substrate, the metal friction piece generates pressure on the silicon-doped graphene nano-crystal carbon film by adding a normal load on the metal friction piece, a direct current electric field is applied between the metal friction piece and the silicon-doped graphene nano-crystal carbon film in the friction process, the external electric field can promote a transfer film to be quickly formed on the metal friction piece, the running-in period of the metal friction piece and the silicon-doped graphene nano-crystal carbon film is shortened, near-zero running-in is realized, and the ultra-low friction state is quickly achieved; generally speaking, the ultralow friction state of the carbon film is quickly realized in the atmospheric environment, and meanwhile, the friction loss of the carbon film and a metal friction piece is reduced, so that the friction interface quickly tends to be stable, the stability and the durability of a mechanical system are improved, and the ultralow friction state of the carbon film is quickly realized.
As shown in fig. 2, as an implementation manner of this embodiment, it is disclosed that the silicon-doped graphene nano-crystalline carbon film is prepared by using an Electron Cyclotron Resonance (ECR) plasma nano-surface processing system; the step S100 specifically includes:
s101, providing a conductive silicon wafer;
s102, fixing the conductive silicon wafer on a substrate frame of the ECR plasma nano surface processing system;
s103, moving the substrate frame into a pre-vacuum chamber of the ECR plasma nano surface processing system, vacuumizing, and then sending into a main vacuum chamber of the ECR plasma nano surface processing system;
s104, when the air pressure in the main vacuum chamber is reduced to 8 multiplied by 10-5Opening circulating cooling water, introducing argon, and adjusting the air pressure in the main vacuum chamber;
s105, setting the currents of three magnetic coils of the ECR plasma nano surface processing system to be 40 amperes, 40 amperes and 48 amperes respectively, setting the microwave power to be 500 watts, setting the bias voltage of a substrate to be-50 volts, and cleaning the conductive silicon wafer for 2-4 minutes;
s106, turning on a power supply of a carbon target and a silicon target of the electron cyclotron resonance plasma nano surface processing system, setting the voltage of the carbon target to be-500V and the substrate bias voltage to be 40-80V, and depositing the carbon film containing the graphene nano-crystal in an electron irradiation mode, wherein the current of the silicon target is 0.3-0.7A, and the silicon film is deposited for 30-60 minutes to obtain the silicon-doped graphene nano-crystal carbon film.
The ECR (electron cyclotron resonance) type plasma nano surface processing system disclosed in the embodiment is a processing technology based on an ECR plasma source, wherein after a conductive silicon wafer with the specification of 25 × 25 × 0.5 mm is sent into a pre-vacuum chamber, air in the pre-vacuum chamber is exhausted by vacuumizing to avoid the influence of impurity gas on the sputtering process, then the conductive silicon chip is sent into a main vacuum chamber, argon is introduced, after the working pressure is adjusted to be 0.1 Pa, the three magnetic coil currents are respectively set to be 40, 40 and 48 amperes, the microwave power is 500 watts, after the plasma is stabilized, the bias voltage of the substrate is set to-50V, the argon ions in the plasma are utilized to clean the substrate for about 3 minutes, so that the surface of the conductive silicon wafer has no impurities and the charges are arranged orderly, by the magnetic fields generated by the three magnetic coils, high-density plasma can be uniformly generated in the main vacuum chamber; and applying direct current negative bias voltage on the particle source to attract positive ions in the plasma flow to sputter the target, wherein target elements generated by sputtering collide with electrons which do cyclotron motion in the plasma flow to generate ionization, so that target ions are obtained, and the target ions move towards the substrate under the action of an electric field generated by a divergent magnetic field, so that the high-quality film can be obtained.
In particular, in this example, a silicon target and a carbon target were added and simultaneously sputtered, and the above-mentioned gas pressure was set at 8X 10-5The silicon-doped graphene nanocrystalline carbon film prepared by the method has parameters of Pa, current of 0.3-0.7A, substrate bias voltage of 40-80V, deposition time of 30-60 minutes and the like, can effectively obtain a hybrid carbon film with expected silicon content, has smoother surface and abundant graphene nanocrystalline compared with a common carbon film, and is beneficial to realizing an ultra-low friction state when used in the method disclosed by the embodiment.
Specifically, as another embodiment of this embodiment, it is disclosed that the adjusting the air pressure in the main vacuum chamber specifically includes:
the air pressure in the main vacuum chamber was adjusted to 0.1 pa.
In the practical implementation process of the method disclosed in this embodiment, the process of sputter film formation can be more stably and rapidly achieved by adjusting the flow rate of argon gas to make the pressure in the main vacuum chamber to 0.1 pa.
Specifically, as another embodiment of this embodiment, it is disclosed that the silicon concentration of the silicon-doped graphene nanocrystalline carbon film is 3% -13%, and the thickness is 150-300 nm, wherein the silicon element introduced into the carbon film can be combined with the carbon element to form a silicon carbide compound, and the growth direction of the graphene nanocrystalline is changed to random orientation, so that the silicon-doped graphene nanocrystalline carbon film has an ultra-smooth state with a surface roughness of 0.102 nm.
The silicon-doped graphene nanocrystalline carbon film in the embodiment needs to reach an ultra-smooth state, so that the silicon concentration in the film forming process needs to be controlled not to be too low, and if the silicon concentration is too low, the surface roughness is not enough, so that the requirement cannot be met; certainly, the silicon concentration cannot be too high, which can affect the conductivity, pressure bearing capacity and other physical properties of the silicon-doped graphene nanocrystalline carbon film and is not beneficial to stably carrying out the subsequent friction process.
On the other hand, the thickness of the silicon-doped graphene nano-crystal carbon film cannot be too small, and if the silicon-doped graphene nano-crystal carbon film is too thin, the silicon-doped graphene nano-crystal carbon film is easy to break in a friction process and is not beneficial to stable and long-term operation of a mechanical system; the silicon-doped graphene nanocrystalline carbon film is not too thick, and the sputtering film layer is too thick, so that the physical property of the film layer is influenced, and the subsequent friction process is not favorably and stably carried out.
Specifically, as another embodiment of this embodiment, it is disclosed that the metal friction member is one of a 304 stainless steel member, an iron member, and a carbon steel member. The components such as the 304 stainless steel piece, the iron casting, the carbon steel piece and the like have good electric conductivity, high hardness and good wear resistance, can be used for a long time, are kept stable in the friction process, have good electric conductivity when an external electric field is applied, can quickly realize the process of forming a transfer film on the surface, pass the running-in period of the friction process and accelerate to enter an ultralow friction state.
Specifically, as another embodiment of this embodiment, it is disclosed that the sliding speed of the metal friction member during the friction process is 0 to 120 mm/sec, and the friction stroke is 20 mm.
Specifically, as another embodiment of this embodiment, it is disclosed that the current of the dc electric field is 0.5 to 1.0 ampere. The applied direct current field is not suitable for overlarge current, is not beneficial to forming a transfer film with good uniformity, influences the running-in time of the metal friction piece and the silicon-doped graphene nano-crystal carbon film, can cause breakdown to bring danger, and is not beneficial to the stable operation of a mechanical system; the additional direct current battery is not too small, and if the voltage is less than 0.5A, the formation of a transfer membrane can be delayed, even a complete transfer membrane cannot be formed, and the aim of achieving a near-zero running-in period is not facilitated.
Specifically, as another embodiment of this embodiment, it is disclosed that the magnitude of the normal load is 5 to 7 newtons. And applying a normal load on the metal friction piece, and transferring the normal load to the silicon-doped graphene nanocrystalline carbon film to generate a corresponding friction force in the friction process.
Specifically, as another embodiment of this embodiment, a test procedure of primary current-carrying friction is disclosed as follows:
and determining friction parameters, wherein the normal load of the metal friction piece is 5N, the friction stroke is 20 mm, the sliding speed is 5 mm/s, and the current intensity output by the direct-current power supply is set to be 1.0A.
The friction test result is shown in fig. 3, and can be obtained from the experimental result of current-carrying friction, the normal load of the silicon-doped graphene nano-crystalline carbon film with the thickness of 150 nm is 5 n, the friction coefficient when the current is 1.0 ampere is 0.009 (less than or equal to 0.01) is ultralow friction, and the running-in period is 5, namely, nearly zero running-in is achieved, which indicates that the silicon-doped graphene nano-crystalline carbon film can rapidly realize the friction test of the carbon film in an ultralow friction state in an atmospheric environment.
As shown in fig. 4, the reciprocating current-carrying friction test device of the present application is used for implementing any one of the above methods for implementing near-zero run-in ultra-low friction, and includes an insulating substrate 10, a metal friction member 20, a power supply 30 and a weight tray 40, where the insulating substrate 10 is used for carrying a silicon-doped graphene nanocrystalline carbon film; the metal friction piece 20 is arranged above the insulating substrate 10 and is opposite to the position of the silicon-doped graphene nanocrystalline carbon film; the power supply 30 is arranged on the insulating substrate 10, and is electrically connected with the metal friction piece 20 and the silicon-doped graphene nanocrystalline carbon film at the same time for applying a direct current electric field; the weight tray 40 is arranged at the top end of the metal friction member 20 and is used for holding weights so as to apply normal load to the silicon-doped graphene nano crystal carbon film. In order to stabilize the weight tray 40, a through hole may be provided in the center of the weight tray 40 for fixing a metal friction bar.
The reciprocating current-carrying friction test device in the embodiment provides an external electric field through the power supply 30, and the weight tray 40 is used for placing weights to provide an additional normal load, so that the metal friction piece 20 can be pressed on the silicon-doped graphene nanocrystalline carbon film to perform a friction process with an ultralow friction coefficient, a mechanical system can keep an ultralow friction state and complete work in an atmospheric environment, the requirements on the working environment are reduced, the application occasions of an ultralow friction structure are increased, and the popularization and application values are improved.
Specifically, as an implementation manner of this embodiment, it is disclosed that the friction test apparatus further includes a fixing component disposed on the insulating substrate 10, where the fixing component includes a conductive copper tape and a double-sided adhesive tape, the conductive copper tape is electrically connected to the power supply 30, and the silicon-doped graphene nano-crystalline carbon film is fixed on the conductive copper tape; the double-sided cloth adhesive tape is used for fixing the conductive copper adhesive tape.
Specifically, as an embodiment of this embodiment, disclose the friction test device still includes base mount, cantilever beam, goes up fixed unit, and on the base mount was located to insulating base 10, go up fixed unit and fix on the cantilever beam, and extend to insulating base 10 top goes up fixed unit and includes metal friction piece 20, the electrically conductive anchor clamps of internal thread that is used for fixed metal friction piece 20 and is used for fixing the external screw thread dead lever on the cantilever beam, and there are internal thread hole and the recess hole that the bottom is used for placing metal friction piece 20 at the top of external screw thread dead lever.
In summary, the present application discloses a method for achieving near-zero running-in ultra-low friction, which includes:
s100, depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;
s200, arranging the silicon-doped graphene nanocrystalline carbon film on an insulating substrate;
s300, arranging a metal friction piece above the insulating substrate at a position opposite to the silicon-doped graphene nanocrystalline carbon film;
s400, applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; meanwhile, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;
s500, enabling the metal friction piece to be in contact with the silicon-doped graphene nanocrystalline carbon film and carrying out current-carrying friction test in an atmospheric environment.
In the method disclosed by the embodiment, the silicon-doped graphene nano-crystal carbon film with the super-smooth surface is prepared on the conductive silicon wafer, so that the friction coefficient of a friction contact surface is reduced, the silicon-doped graphene nano-crystal carbon film is arranged on the insulating substrate, the metal friction piece generates pressure on the silicon-doped graphene nano-crystal carbon film by adding a normal load on the metal friction piece, a direct current electric field is applied between the metal friction piece and the silicon-doped graphene nano-crystal carbon film in the friction process, the external electric field can promote a transfer film to be quickly formed on the metal friction piece, the running-in period of the metal friction piece and the silicon-doped graphene nano-crystal carbon film is shortened, near-zero running-in is realized, and the ultra-low friction state is quickly achieved; generally speaking, the ultralow friction state of the carbon film is quickly realized in the atmospheric environment, and meanwhile, the friction loss of the carbon film and a metal friction piece is reduced, so that the friction interface quickly tends to be stable, the stability and the durability of a mechanical system are improved, and the ultralow friction state of the carbon film is quickly realized.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A method of achieving near zero run-in ultra low friction, comprising:
depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;
arranging the silicon-doped graphene nano-crystal carbon film on an insulating substrate;
arranging a metal friction piece above the insulating substrate at a position opposite to the silicon-doped graphene nanocrystalline carbon film;
applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; meanwhile, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;
and contacting the metal friction piece with the silicon-doped graphene nanocrystalline carbon film and carrying out a current-carrying friction test in an atmospheric environment.
2. The method for achieving near-zero run-in ultra-low friction according to claim 1, wherein the silicon-doped graphene nanocrystalline carbon film is prepared using an electron cyclotron resonance plasma nano-surface processing system; the step of depositing the carbon film on the conductive silicon wafer to obtain the silicon-doped graphene nanocrystalline carbon film specifically comprises the following steps:
providing a conductive silicon wafer;
fixing the conductive silicon wafer on a substrate frame of the electron cyclotron resonance plasma nano surface processing system;
moving the substrate frame into a pre-vacuum chamber of the electron cyclotron resonance plasma nano surface processing system, pre-vacuumizing, and then sending into a main vacuum chamber of the electron cyclotron resonance plasma nano surface processing system;
when the air pressure in the main vacuum chamber is reduced to 8 multiplied by 10-5Open cycle coolingIntroducing argon into the main vacuum chamber, and adjusting the air pressure in the main vacuum chamber;
setting the currents of three magnetic coils of the electron cyclotron resonance plasma nano surface processing system to be 40 amperes, 40 amperes and 48 amperes respectively, setting the microwave power to be 500 watts, setting the bias voltage of a substrate to be-50 volts, and cleaning the conductive silicon wafer for 2-4 minutes;
and opening a power supply of a carbon target and a silicon target of the electron cyclotron resonance plasma nano surface processing system, setting the voltage of the carbon target to be-500V and the bias voltage of the substrate to be 40-80V, depositing the carbon film containing the graphene nano-crystals in an electron irradiation mode, setting the current of the silicon target to be 0.3-0.7A, and depositing for 30-60 minutes to obtain the silicon-doped graphene nano-crystal carbon film.
3. The method of achieving near-zero run-in ultra-low friction according to claim 2, wherein the adjusting the air pressure within the primary vacuum chamber specifically comprises:
the air pressure in the main vacuum chamber was adjusted to 0.1 pa.
4. The method as claimed in claim 2, wherein the silicon-doped graphene nanocrystalline carbon film has a silicon concentration of 3% -13%, a thickness of 150-300 nm, and a surface roughness of 0.102 nm.
5. The method of achieving near zero running-in ultra low friction as claimed in claim 1 wherein said metallic friction member is one of 304 stainless steel, iron casting, carbon steel.
6. The method of achieving near zero running-in ultra low friction according to claim 1, wherein the sliding speed of the metallic friction member during friction is 0-120 mm/sec, and the friction stroke is 20 mm.
7. The method of achieving near-zero run-in ultra-low friction according to claim 1, wherein the current of the dc electric field is 0.5-1.0 amps.
8. The method of achieving near zero run-in ultra low friction according to claim 1, wherein the magnitude of the normal load is 5-7 newtons.
9. A friction test device for implementing the method of achieving near zero run-in ultra low friction as claimed in any one of claims 1 to 8, comprising:
the insulating substrate is used for bearing the silicon-doped graphene nanocrystalline carbon film;
the metal friction piece is arranged above the insulating substrate and is opposite to the position of the silicon-doped graphene nanocrystalline carbon film;
the power supply is arranged on the insulating substrate, is simultaneously connected with the metal friction piece and the silicon-doped graphene nanocrystalline carbon film, and is used for applying a direct current electric field; and
and the weight tray is arranged at the top end of the metal friction piece and used for containing weights so as to apply normal load to the silicon-doped graphene nano crystal carbon film.
10. The friction test apparatus according to claim 9, further comprising a fixing member disposed on the insulating substrate, the fixing member comprising a conductive copper tape and a double-sided cloth tape, the conductive copper tape being electrically connected to the power supply, the silicon-doped graphene nano-crystalline carbon film being fixed on the conductive copper tape; the double-sided cloth adhesive tape is used for fixing the conductive copper adhesive tape.
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