CN114364115B - Transverse wave excited plasma array generator - Google Patents

Transverse wave excited plasma array generator Download PDF

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Publication number
CN114364115B
CN114364115B CN202210050908.8A CN202210050908A CN114364115B CN 114364115 B CN114364115 B CN 114364115B CN 202210050908 A CN202210050908 A CN 202210050908A CN 114364115 B CN114364115 B CN 114364115B
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plasma
generator
transverse wave
plasma array
frequency
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CN114364115A (en
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魏巍
郭丰领
杨辉
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China Academy of Aerospace Aerodynamics CAAA
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China Academy of Aerospace Aerodynamics CAAA
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

The invention discloses a transverse wave excitation plasma array generator, which comprises: a plasma array controller and a controlled profile, wherein the plasma array controller specifically comprises: the plasma array controllers are arranged on the controlled surface; the plasma array controller is specifically configured to: under the excitation of high-frequency electricity, the plasma generator is controlled to generate high-frequency jet flow, high-frequency transverse waves distributed in space are obtained, high-frequency excitation for controlling the second mode of the surface layer is generated, and the surface layer of the controlled surface is caused to transition. The invention improves the frequency domain boundary of the plasma flow control.

Description

Transverse wave excited plasma array generator
Technical Field
The invention relates to the technical field of plasmas, in particular to a transverse wave excitation plasma array generator.
Background
The boundary layer flowing state has great influence on the surface heat flow, friction resistance and the like of the aircraft, and in some high-speed aircrafts, dynamic coupling phenomenon of transition state and aircraft movement/control can also occur, so that the flight stability of the aircraft is influenced, and even the flight safety is endangered. Therefore, the control of flow transition is one of the key problems in the development of high-speed aircrafts.
The factors influencing transition include the incoming flow condition, the surface roughness, the transition tape structure form and the like, and the transition occurrence form is also divided into natural transition, forced transition and the like, and the present patent connotation mainly refers to excitation/control of the second mode (main frequency about 50 kHz) of the boundary layer.
In engineering application, a passive control structure is usually adopted at home and abroad to control flow transition, such as a vortex generator and the like, but the mode can not cover a wider flight envelope, and only a limited number of common working conditions can be selected for flow control. Other flow control methods include, but are not limited to, air-aspiration systems, diaphragm-type synthetic jet generators, piezoelectric synthetic jet generators, piston-type synthetic jet generators, and the like. Vortex generators are typically arranged on the surface of a wing or flap to generate a flow-direction vortex that enhances the blending of the main flow and boundary layer flow for the purpose of suppressing separation, but which cannot improve performance in different flight conditions; the air blowing and sucking system can inject energy into the auxiliary surface layer through an external air source, but the size and the power consumption of the air blowing and sucking system are overlarge; the high-frequency jet energy generated by the diaphragm type and piezoelectric type synthetic jet generators and the like is small, the jet speed is small, and even though the effect of the high-frequency jet energy is pertinently amplified through various mechanisms, the generated effect is still insufficient to reach the practical standard, so that the high-frequency jet energy generating device has application in high-speed flow; the piston type synthetic jet generator can obtain higher energy output, but is limited by a structural form, and the jet frequency of the piston type synthetic jet generator cannot reach higher level; of these prior art techniques, the upper frequency of plasma excitation is highest, but is also typically below 3kHz.
In summary, the method cannot fully meet the control requirement of the second mode of the boundary layer from the working condition coverage, frequency, intensity, power and other angles.
Disclosure of Invention
The present invention aims to provide a transverse wave excited plasma array generator, which aims to solve the above problems in the prior art.
The invention provides a transverse wave excited plasma array generator, comprising: a plasma array controller and a controlled profile, wherein the plasma array controller specifically comprises: the plasma array controllers are arranged on the controlled surface;
the plasma array controller is specifically configured to: under the excitation of high-frequency electricity, the plasma generator is controlled to generate high-frequency jet flow, high-frequency transverse waves distributed in space are obtained, high-frequency excitation for controlling the second mode of the surface layer is generated, and the surface layer of the controlled surface is caused to transition.
By adopting the embodiment of the invention, the high-frequency transverse wave can be generated and directly resonated with the second mode of the boundary layer, so that forced transition is generated; the high-frequency transverse waves can be overlapped and combined along the flow direction to form frequency modulation and intensity adjustment of the flow direction, and the flow control boundary is widened.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention in order that the same may be more clearly understood and to make the same and other objects, features and advantages of the present invention more readily apparent.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a transverse wave excited plasma array generator in accordance with an embodiment of the present invention;
FIG. 2 is a schematic diagram of the structure of a single plasma generator according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a plasma array controller according to an embodiment of the present invention;
FIG. 4 is a schematic illustration of an embodiment of the present invention applied to a 20 cone phantom;
fig. 5 is a schematic diagram of the working principle of an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be clearly and completely described in connection with the embodiments, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise. Furthermore, the terms "mounted," "connected," "coupled," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
According to an embodiment of the present invention, there is provided a transverse wave-excited plasma array generator, and fig. 1 is a schematic diagram of the transverse wave-excited plasma array generator according to an embodiment of the present invention, as shown in fig. 1, and the transverse wave-excited plasma array generator according to an embodiment of the present invention specifically includes:
a plasma array controller 2 and a controlled surface 3, wherein the plasma array controller 2 specifically comprises: a plurality of plasma generators 1, the plasma array controller 2 is installed on the controlled surface 3;
the plasma array controller 2 is specifically configured to: under the excitation of high-frequency electricity, the plasma generator 1 is controlled to generate high-frequency jet flow, high-frequency transverse waves distributed in space are obtained, high-frequency excitation for controlling the second mode of the surface layer is generated, and the surface layer of the controlled surface 3 is caused to transition. The principle of which is shown in figure 5.
The plasma array controller 2 specifically includes: an LC circuit composed of a plurality of plasma generators 1, a capacitor and an inductor is formed by connecting the above components at specific positions. The mechanism of the plasma array controller 3 is shown in fig. 3, and specifically includes: the single plasma generator 1, the capacitor and the inductance coil are connected in series to form each stage of loop of the plasma array, wherein the input end of the lower stage of loop is connected to the downstream of the inductance coil of the upper stage of loop to form a loop module; each loop module is connected with the next loop module in series to form a loop module; each loop module is connected with the next loop module in parallel to form the plasma array controller.
As shown in fig. 2, the plasma generator 1 specifically includes: the device comprises a cavity and electrodes arranged on two sides of the cavity. The material of the cavity comprises: ceramics, the materials of the electrode include: tungsten. The ratio of the diameter of the electrode to the inner diameter of the cavity is 0.05-0.08.
In addition, in the embodiment of the invention, the frequency of the high-frequency electricity is 1 KHz-3 KHz, and the voltage is 1 KV-10 KV.
As shown in fig. 1, the ratio of the X-direction pitch to the Z-direction pitch of the plasma generators in the plasma array controller 2 is 0.8 to 1.2. The ratio of the number of the plasma generators distributed in the X direction to the number of the plasma generators distributed in the Z direction is 0.8-1.2. The output characteristic of the plasma generator 2 is y=f (ω, t, τ, Φ), where ω is the jet frequency of the plasma generator, t is the time series, τ is the spatially distributed delay matrix of the transverse wave excited plasma array generator, and Φ is the spatially distributed phase matrix of the transverse wave excited plasma array generator.
It should be noted that, as shown in fig. 4, the transverse wave excited plasma array generator of the embodiment of the present invention is particularly suitable for controlling the boundary layer flow of the hypersonic air inlet channel, the separation flow of the high-speed airfoil surface, the compression corner shock wave control, etc. Taking control of hypersonic inlet boundary layer flow as an example, the hypersonic inlet boundary layer flow control device is arranged in the inlet, so that periodical reverse jet flow generated by the hypersonic inlet boundary layer flow control device interacts with high-speed incoming flow, boundary layer/main flow mixing can be enhanced, fluid entering the inlet is converted into turbulent flow, flow separation of compression corners and lip shock wave reflection areas is effectively restrained, and the performance of the inlet is improved.
From the above description, it can be seen that, in the technical solution of the embodiment of the present invention, a plasma synthetic jet generator is adopted as a basic flow control component, and an LC network is adopted to drive the flow control component, so as to obtain a high-frequency transverse wave generating matrix with spatial distribution, and further influence the second mode of the boundary layer, so as to force the transition of the boundary layer.
In summary, compared with the prior art, the invention has the following beneficial effects:
(1) The embodiment of the invention can generate high-frequency transverse waves to directly generate resonance with the second mode of the boundary layer, thereby generating forced transition.
(2) The high-frequency transverse wave generated by the embodiment of the invention is controllable and can be adjusted in real time according to the flight state.
(3) The high-frequency transverse waves generated by the embodiment of the invention can be overlapped and combined along the flow direction to form frequency modulation and intensity adjustment of the flow direction, thereby widening the flow control boundary.
The foregoing describes specific embodiments of the present disclosure. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims can be performed in a different order than in the embodiments and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.
In the 30 s of the 20 th century, improvements to one technology could clearly be distinguished as improvements in hardware (e.g., improvements to circuit structures such as diodes, transistors, switches, etc.) or software (improvements to the process flow). However, with the development of technology, many improvements of the current method flows can be regarded as direct improvements of hardware circuit structures. Designers almost always obtain corresponding hardware circuit structures by programming improved method flows into hardware circuits. Therefore, an improvement of a method flow cannot be said to be realized by a hardware entity module. For example, a programmable logic device (Programmable Logic Device, PLD) (e.g., field programmable gate array (Field Programmable Gate Array, FPGA)) is an integrated circuit whose logic function is determined by the programming of the device by a user. A designer programs to "integrate" a digital system onto a PLD without requiring the chip manufacturer to design and fabricate application-specific integrated circuit chips. Moreover, nowadays, instead of manually manufacturing integrated circuit chips, such programming is mostly implemented by using "logic compiler" software, which is similar to the software compiler used in program development and writing, and the original code before the compiling is also written in a specific programming language, which is called hardware description language (Hardware Description Language, HDL), but not just one of the hdds, but a plurality of kinds, such as ABEL (Advanced Boolean Expression Language), AHDL (Altera Hardware Description Language), confluence, CUPL (Cornell University Programming Language), HDCal, JHDL (Java Hardware Description Language), lava, lola, myHDL, PALASM, RHDL (Ruby Hardware Description Language), etc., VHDL (Very-High-Speed Integrated Circuit Hardware Description Language) and Verilog are currently most commonly used. It will also be apparent to those skilled in the art that a hardware circuit implementing the logic method flow can be readily obtained by merely slightly programming the method flow into an integrated circuit using several of the hardware description languages described above.
The controller may be implemented in any suitable manner, for example, the controller may take the form of, for example, a microprocessor or processor and a computer readable medium storing computer readable program code (e.g., software or firmware) executable by the (micro) processor, logic gates, switches, application specific integrated circuits (Application Specific Integrated Circuit, ASIC), programmable logic controllers, and embedded microcontrollers, examples of which include, but are not limited to, the following microcontrollers: ARC 625D, atmel AT91SAM, microchip PIC18F26K20, and Silicone Labs C8051F320, the memory controller may also be implemented as part of the control logic of the memory. Those skilled in the art will also appreciate that, in addition to implementing the controller in a pure computer readable program code, it is well possible to implement the same functionality by logically programming the method steps such that the controller is in the form of logic gates, switches, application specific integrated circuits, programmable logic controllers, embedded microcontrollers, etc. Such a controller may thus be regarded as a kind of hardware component, and means for performing various functions included therein may also be regarded as structures within the hardware component. Or even means for achieving the various functions may be regarded as either software modules implementing the methods or structures within hardware components.
The system, apparatus, module or unit set forth in the above embodiments may be implemented in particular by a computer chip or entity, or by a product having a certain function. One typical implementation is a computer. In particular, the computer may be, for example, a personal computer, a laptop computer, a cellular telephone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.
For convenience of description, the above devices are described as being functionally divided into various units, respectively. Of course, the functions of each unit may be implemented in the same piece or pieces of software and/or hardware when implementing the embodiments of the present specification.
One skilled in the relevant art will recognize that one or more embodiments of the present description may be provided as a method, system, or computer program product. Accordingly, one or more embodiments of the present description may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present description can take the form of a computer program product on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein.
The present description is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems) and computer program products according to embodiments of the specification. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
In one typical configuration, a computing device includes one or more processors (CPUs), input/output interfaces, network interfaces, and memory.
The memory may include volatile memory in a computer-readable medium, random Access Memory (RAM) and/or nonvolatile memory, such as Read Only Memory (ROM) or flash memory (flash RAM). Memory is an example of computer-readable media.
Computer readable media, including both non-transitory and non-transitory, removable and non-removable media, may implement information storage by any method or technology. The information may be computer readable instructions, data structures, modules of a program, or other data. Examples of storage media for a computer include, but are not limited to, phase change memory (PRAM), static Random Access Memory (SRAM), dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), read Only Memory (ROM), electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices, or any other non-transmission medium, which can be used to store information that can be accessed by a computing device. Computer-readable media, as defined herein, does not include transitory computer-readable media (transmission media), such as modulated data signals and carrier waves.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or apparatus that comprises the element.
One or more embodiments of the present specification may be described in the general context of computer-executable instructions, such as program modules, being executed by a computer. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform particular tasks or implement particular abstract data types. One or more embodiments of the specification may also be practiced in distributed computing environments where tasks are performed by remote processing devices that are linked through a communications network. In a distributed computing environment, program modules may be located in both local and remote computer storage media including memory storage devices.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for system embodiments, since they are substantially similar to method embodiments, the description is relatively simple, as relevant to see a section of the description of method embodiments.
The foregoing description is by way of example only and is not intended to limit the present disclosure. Various modifications and changes may occur to those skilled in the art. Any modifications, equivalent substitutions, improvements, etc. that fall within the spirit and principles of the present document are intended to be included within the scope of the claims of the present document.

Claims (10)

1. A transverse wave excited plasma array generator, comprising: a plasma array controller and a controlled profile, wherein the plasma array controller specifically comprises: the plasma array controllers are arranged on the controlled surface;
the plasma array controller is specifically configured to: under the excitation of high-frequency electricity, the plurality of plasma generators are controlled to generate high-frequency jet flows, high-frequency transverse waves distributed in space are obtained, high-frequency excitation for controlling the second mode of the surface layer is generated, and the surface layer of the controlled surface is caused to be transited.
2. The transverse wave excited plasma array generator of claim 1, wherein the plasma array controller comprises: an LC circuit consisting of a plurality of plasma generators, capacitors and inductors is formed by connecting the plasma generators, the capacitors and the inductors according to specific positions;
the ratio of the space between the X direction and the space between the plurality of plasma generators in the Z direction is 0.8-1.2, the ratio of the number of the plurality of plasma generators distributed in the X direction to the number of the plurality of plasma generators distributed in the Z direction is 0.8-1.2, the output characteristic of the plasma generators is Y=F (omega, t, tau, phi), wherein omega is the jet frequency of the plasma generators, t is a time sequence, tau is the spatial distribution delay matrix of the transverse wave excitation plasma array generators, and phi is the spatial distribution phase matrix of the transverse wave excitation plasma array generators.
3. The transverse wave excited plasma array generator of claim 2, wherein the plasma array controller is specifically: the single plasma generator, the capacitor and the inductance coil are connected in series to form each stage of loop of the plasma array, wherein the input end of the lower stage of loop is connected to the downstream of the inductance coil of the upper stage of loop to form a loop module; each loop module is connected with the next loop module in series to form a loop module; each loop module is connected with the next loop module in parallel to form the plasma array controller.
4. The transverse wave excited plasma array generator of claim 1, wherein the plasma generator comprises in particular: the device comprises a cavity and electrodes arranged on two sides of the cavity.
5. The transverse wave excited plasma array generator of claim 4, wherein the material of the cavity comprises: ceramics, the materials of the electrode include: tungsten.
6. The transverse wave-excited plasma array generator of claim 4, wherein a ratio of a diameter of the electrode to an inner diameter of the cavity is 0.05-0.08.
7. The transverse wave-excited plasma array generator of claim 1, wherein the high frequency electricity has a frequency of 1KHz to 3KHz and a voltage of 1KV to 10KV.
8. The transverse wave-excited plasma array generator of claim 1, wherein,
the ratio of the space between the X direction and the space between the plasma generators in the Z direction is 0.8-1.2.
9. The transverse wave-excited plasma array generator of claim 8, wherein the ratio of the number of the plurality of plasma generators distributed in the X-direction to the number of the plurality of plasma generators distributed in the Z-direction is 0.8 to 1.2.
10. The transverse wave-excited plasma array generator of claim 1, wherein the output characteristic of the plasma generator is Y = F (ω, t, τ, Φ), where ω is the jet frequency of the plasma generator, t is the time series, τ is the spatially distributed delay matrix of the transverse wave-excited plasma array generator, and Φ is the spatially distributed phase matrix of the transverse wave-excited plasma array generator.
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